CN108604626B - 具有纹理化衬底的波长转换发光设备 - Google Patents

具有纹理化衬底的波长转换发光设备 Download PDF

Info

Publication number
CN108604626B
CN108604626B CN201680074440.9A CN201680074440A CN108604626B CN 108604626 B CN108604626 B CN 108604626B CN 201680074440 A CN201680074440 A CN 201680074440A CN 108604626 B CN108604626 B CN 108604626B
Authority
CN
China
Prior art keywords
transparent substrate
light
light emitting
emitting device
textured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680074440.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN108604626A (zh
Inventor
T.洛佩斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of CN108604626A publication Critical patent/CN108604626A/zh
Application granted granted Critical
Publication of CN108604626B publication Critical patent/CN108604626B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Device Packages (AREA)
CN201680074440.9A 2015-10-19 2016-10-10 具有纹理化衬底的波长转换发光设备 Active CN108604626B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562243470P 2015-10-19 2015-10-19
US62/243470 2015-10-19
PCT/US2016/056284 WO2017069964A1 (en) 2015-10-19 2016-10-10 Wavelength converted light emitting device with textured substrate

Publications (2)

Publication Number Publication Date
CN108604626A CN108604626A (zh) 2018-09-28
CN108604626B true CN108604626B (zh) 2022-02-18

Family

ID=57153584

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680074440.9A Active CN108604626B (zh) 2015-10-19 2016-10-10 具有纹理化衬底的波长转换发光设备

Country Status (7)

Country Link
US (1) US11005012B2 (enExample)
EP (1) EP3365925B1 (enExample)
JP (1) JP6852066B2 (enExample)
KR (1) KR102657885B1 (enExample)
CN (1) CN108604626B (enExample)
TW (1) TWI745309B (enExample)
WO (1) WO2017069964A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6719424B2 (ja) * 2017-06-26 2020-07-08 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7278301B2 (ja) * 2018-04-23 2023-05-19 クリーエルイーディー インコーポレイテッド パターン形成された表面を有するスーパーストレートを備える半導体発光デバイス
US11333320B2 (en) * 2018-10-22 2022-05-17 American Sterilizer Company Retroreflector LED spectrum enhancement method and apparatus
DE102018127521A1 (de) * 2018-11-05 2020-05-07 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device
TWI786503B (zh) * 2020-12-29 2022-12-11 晶元光電股份有限公司 發光元件及其製造方法
DE102021119003A1 (de) * 2021-07-22 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterelement und optoelektronisches bauelement
WO2023189384A1 (ja) * 2022-03-31 2023-10-05 ソニーグループ株式会社 発光デバイスおよび画像表示装置
JP2023152775A (ja) * 2022-03-31 2023-10-17 日亜化学工業株式会社 発光装置
JP7626947B2 (ja) 2022-06-24 2025-02-05 日亜化学工業株式会社 発光モジュール

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1886841A (zh) * 2003-11-25 2006-12-27 松下电工株式会社 采用发光二极管芯片的发光器件
CN102347428A (zh) * 2010-07-28 2012-02-08 Lg伊诺特有限公司 发光器件封装
WO2014203793A1 (ja) * 2013-06-17 2014-12-24 ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351397A1 (de) 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
DE602004028648D1 (de) * 2003-11-25 2010-09-23 Panasonic Elec Works Co Ltd Lichtemittierendes bauelement mit einem leuchtdiodenchip
JP4821087B2 (ja) * 2003-11-28 2011-11-24 パナソニック電工株式会社 発光装置
JP2005209795A (ja) 2004-01-21 2005-08-04 Koito Mfg Co Ltd 発光モジュール及び灯具
US7514721B2 (en) * 2005-11-29 2009-04-07 Koninklijke Philips Electronics N.V. Luminescent ceramic element for a light emitting device
JP2008251561A (ja) * 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd 表示装置
US20090173958A1 (en) * 2008-01-04 2009-07-09 Cree, Inc. Light emitting devices with high efficiency phospor structures
DE102008025756B4 (de) 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
JP2011233650A (ja) 2010-04-26 2011-11-17 Toshiba Corp 半導体発光装置
WO2012006123A2 (en) 2010-06-28 2012-01-12 Axlen Technologies, Inc. Optical beam shaping and polarization selection on led with wavelength conversion
JP2012109532A (ja) * 2010-09-08 2012-06-07 Mitsubishi Chemicals Corp 発光装置、照明装置、及びレンズ
US8492788B2 (en) * 2010-10-08 2013-07-23 Guardian Industries Corp. Insulating glass (IG) or vacuum insulating glass (VIG) unit including light source, and/or methods of making the same
US20120112218A1 (en) * 2010-11-04 2012-05-10 Agency For Science, Technology And Research Light Emitting Diode with Polarized Light Emission
CN102683514B (zh) * 2011-03-06 2017-07-14 维亚甘有限公司 发光二极管封装和制造方法
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
TWI475729B (zh) * 2011-07-14 2015-03-01 國立臺灣科技大學 偏極化白光發光二極體
US8946747B2 (en) * 2012-02-13 2015-02-03 Cree, Inc. Lighting device including multiple encapsulant material layers
WO2013144798A1 (en) * 2012-03-30 2013-10-03 Koninklijke Philips N.V. Optical cavity including a light emitting device and wavelength converting material
US20140016299A1 (en) 2012-06-14 2014-01-16 Solar Science, Co., Ltd. Photon enhancement guiding structures, devices, and methods for light emitting devices
WO2014041463A2 (en) * 2012-09-17 2014-03-20 Koninklijke Philips N.V. Light emitting device including shaped substrate
EP3172771B1 (en) * 2014-07-23 2019-03-20 Crystal Is, Inc. Illumination device with improved photon extraction, and assembling method therefor
KR20160124375A (ko) * 2015-04-17 2016-10-27 삼성전자주식회사 반도체 발광 소자 패키지의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1886841A (zh) * 2003-11-25 2006-12-27 松下电工株式会社 采用发光二极管芯片的发光器件
CN102347428A (zh) * 2010-07-28 2012-02-08 Lg伊诺特有限公司 发光器件封装
WO2014203793A1 (ja) * 2013-06-17 2014-12-24 ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法

Also Published As

Publication number Publication date
EP3365925A1 (en) 2018-08-29
TW201727946A (zh) 2017-08-01
US20180315901A1 (en) 2018-11-01
EP3365925B1 (en) 2021-04-14
KR20180070673A (ko) 2018-06-26
TWI745309B (zh) 2021-11-11
CN108604626A (zh) 2018-09-28
US11005012B2 (en) 2021-05-11
KR102657885B1 (ko) 2024-04-17
JP2018531517A (ja) 2018-10-25
JP6852066B2 (ja) 2021-03-31
WO2017069964A1 (en) 2017-04-27

Similar Documents

Publication Publication Date Title
CN108604626B (zh) 具有纹理化衬底的波长转换发光设备
CN111613708B (zh) 用于制造顶发射式半导体发光器件的方法
CN103003966B (zh) 具有波长变换层的发光二级管芯片及其制造方法，以及包括其的封装件及其制造方法
JP7361810B2 (ja) 反射層を伴うマウント上の発光デバイス
CN105393373B (zh) 具有光学元件和反射体的发光器件
TWI734110B (zh) 照明結構及製造發光裝置之方法
JP2018531517A6 (ja) テクスチャ基板を有する波長変換式発光デバイス
JP6294402B2 (ja) 半導体構造の処理方法
WO2016094422A1 (en) Wavelength converted semiconductor light emitting device
CN108258106A (zh) 用于紫外光发射装置的封装和封装紫外光发射装置的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant