CN108604626B - 具有纹理化衬底的波长转换发光设备 - Google Patents

具有纹理化衬底的波长转换发光设备 Download PDF

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Publication number
CN108604626B
CN108604626B CN201680074440.9A CN201680074440A CN108604626B CN 108604626 B CN108604626 B CN 108604626B CN 201680074440 A CN201680074440 A CN 201680074440A CN 108604626 B CN108604626 B CN 108604626B
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transparent substrate
light
light emitting
emitting device
textured
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CN108604626A (zh
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T.洛佩斯
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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CN201680074440.9A 2015-10-19 2016-10-10 具有纹理化衬底的波长转换发光设备 Active CN108604626B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562243470P 2015-10-19 2015-10-19
US62/243470 2015-10-19
PCT/US2016/056284 WO2017069964A1 (en) 2015-10-19 2016-10-10 Wavelength converted light emitting device with textured substrate

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CN108604626A CN108604626A (zh) 2018-09-28
CN108604626B true CN108604626B (zh) 2022-02-18

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US (1) US11005012B2 (enExample)
EP (1) EP3365925B1 (enExample)
JP (1) JP6852066B2 (enExample)
KR (1) KR102657885B1 (enExample)
CN (1) CN108604626B (enExample)
TW (1) TWI745309B (enExample)
WO (1) WO2017069964A1 (enExample)

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JP6719424B2 (ja) * 2017-06-26 2020-07-08 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN112005390B (zh) * 2018-04-23 2025-02-28 科锐Led公司 包括具有图案化表面的覆板的半导体发光装置
US11333320B2 (en) * 2018-10-22 2022-05-17 American Sterilizer Company Retroreflector LED spectrum enhancement method and apparatus
DE102018127521B4 (de) * 2018-11-05 2026-03-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
US11271136B2 (en) 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device
JP7633536B2 (ja) 2020-02-20 2025-02-20 日亜化学工業株式会社 発光装置及びその製造方法
TWI786503B (zh) * 2020-12-29 2022-12-11 晶元光電股份有限公司 發光元件及其製造方法
DE102021119003A1 (de) * 2021-07-22 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterelement und optoelektronisches bauelement
JP2023152775A (ja) * 2022-03-31 2023-10-17 日亜化学工業株式会社 発光装置
WO2023189384A1 (ja) * 2022-03-31 2023-10-05 ソニーグループ株式会社 発光デバイスおよび画像表示装置
JP7626947B2 (ja) * 2022-06-24 2025-02-05 日亜化学工業株式会社 発光モジュール
JP2025099617A (ja) 2023-12-22 2025-07-03 日亜化学工業株式会社 発光装置

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WO2014203793A1 (ja) * 2013-06-17 2014-12-24 ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法

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JP4821087B2 (ja) 2003-11-28 2011-11-24 パナソニック電工株式会社 発光装置
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CN1886841A (zh) * 2003-11-25 2006-12-27 松下电工株式会社 采用发光二极管芯片的发光器件
CN102347428A (zh) * 2010-07-28 2012-02-08 Lg伊诺特有限公司 发光器件封装
WO2014203793A1 (ja) * 2013-06-17 2014-12-24 ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法

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EP3365925B1 (en) 2021-04-14
US11005012B2 (en) 2021-05-11
EP3365925A1 (en) 2018-08-29
TWI745309B (zh) 2021-11-11
JP6852066B2 (ja) 2021-03-31
JP2018531517A (ja) 2018-10-25
WO2017069964A1 (en) 2017-04-27
KR102657885B1 (ko) 2024-04-17
US20180315901A1 (en) 2018-11-01
TW201727946A (zh) 2017-08-01
KR20180070673A (ko) 2018-06-26
CN108604626A (zh) 2018-09-28

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