CN108604534B - 光致抗蚀剂成分浓度测定装置及浓度测定方法 - Google Patents

光致抗蚀剂成分浓度测定装置及浓度测定方法 Download PDF

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Publication number
CN108604534B
CN108604534B CN201680079908.3A CN201680079908A CN108604534B CN 108604534 B CN108604534 B CN 108604534B CN 201680079908 A CN201680079908 A CN 201680079908A CN 108604534 B CN108604534 B CN 108604534B
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China
Prior art keywords
photoresist
concentration
photoresist stripping
stripping solution
measuring
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CN201680079908.3A
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Chinese (zh)
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CN108604534A (zh
Inventor
岛田和哉
西川晴香
鬼头佑典
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201680079908.3A 2016-01-26 2016-12-26 光致抗蚀剂成分浓度测定装置及浓度测定方法 Active CN108604534B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016012558A JP6643710B2 (ja) 2016-01-26 2016-01-26 フォトレジスト成分濃度測定装置および濃度測定方法
JP2016-012558 2016-01-26
PCT/JP2016/088687 WO2017130620A1 (ja) 2016-01-26 2016-12-26 フォトレジスト成分濃度測定装置および濃度測定方法

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CN108604534A CN108604534A (zh) 2018-09-28
CN108604534B true CN108604534B (zh) 2022-06-21

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JP (1) JP6643710B2 (enExample)
CN (1) CN108604534B (enExample)
TW (1) TWI697743B (enExample)
WO (1) WO2017130620A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020130415B4 (de) 2019-12-26 2025-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Versorgungssystem für chemische flüssigkeiten und verfahren zur versorgung mit chemischen flüssigkeiten
US11715656B2 (en) 2019-12-26 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical liquid supplying system and method of supplying chemical liquid

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1174343A (zh) * 1996-07-02 1998-02-25 株式会社平间理化研究所 光刻胶剥离液管理装置
JP2000058411A (ja) * 1998-08-04 2000-02-25 Mitsubishi Electric Corp 半導体製造装置
JP2005191030A (ja) * 2003-12-24 2005-07-14 Sharp Corp レジスト除去装置およびレジスト除去方法
CN1675263A (zh) * 2002-08-09 2005-09-28 E.I.内穆尔杜邦公司 用作157纳米微石印术的光致抗蚀剂,氟聚合物和方法
JP2007316360A (ja) * 2006-05-26 2007-12-06 Nishimura Yasuji 水系フォトレジスト剥離液の管理方法および管理装置
JP2008066520A (ja) * 2006-09-07 2008-03-21 Mitsubishi Chemical Engineering Corp フォトレジスト供給装置およびフォトレジスト供給方法
JP2009258211A (ja) * 2008-04-14 2009-11-05 Toagosei Co Ltd 導電性高分子膜上のレジスト被膜の除去方法および除去装置
JP2014096462A (ja) * 2012-11-08 2014-05-22 Panasonic Corp フォトレジスト濃度測定装置および測定方法
JP2015162659A (ja) * 2014-02-28 2015-09-07 芝浦メカトロニクス株式会社 処理装置および処理方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1174343A (zh) * 1996-07-02 1998-02-25 株式会社平间理化研究所 光刻胶剥离液管理装置
JP2000058411A (ja) * 1998-08-04 2000-02-25 Mitsubishi Electric Corp 半導体製造装置
CN1675263A (zh) * 2002-08-09 2005-09-28 E.I.内穆尔杜邦公司 用作157纳米微石印术的光致抗蚀剂,氟聚合物和方法
JP2005191030A (ja) * 2003-12-24 2005-07-14 Sharp Corp レジスト除去装置およびレジスト除去方法
JP2007316360A (ja) * 2006-05-26 2007-12-06 Nishimura Yasuji 水系フォトレジスト剥離液の管理方法および管理装置
JP2008066520A (ja) * 2006-09-07 2008-03-21 Mitsubishi Chemical Engineering Corp フォトレジスト供給装置およびフォトレジスト供給方法
JP2009258211A (ja) * 2008-04-14 2009-11-05 Toagosei Co Ltd 導電性高分子膜上のレジスト被膜の除去方法および除去装置
JP2014096462A (ja) * 2012-11-08 2014-05-22 Panasonic Corp フォトレジスト濃度測定装置および測定方法
JP2015162659A (ja) * 2014-02-28 2015-09-07 芝浦メカトロニクス株式会社 処理装置および処理方法

Also Published As

Publication number Publication date
TWI697743B (zh) 2020-07-01
CN108604534A (zh) 2018-09-28
JP2017135204A (ja) 2017-08-03
JP6643710B2 (ja) 2020-02-12
WO2017130620A1 (ja) 2017-08-03
TW201736987A (zh) 2017-10-16

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