CN108598032A - A kind of engagement of wafer is to Barebone and alignment methods - Google Patents
A kind of engagement of wafer is to Barebone and alignment methods Download PDFInfo
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- CN108598032A CN108598032A CN201810499801.5A CN201810499801A CN108598032A CN 108598032 A CN108598032 A CN 108598032A CN 201810499801 A CN201810499801 A CN 201810499801A CN 108598032 A CN108598032 A CN 108598032A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
Abstract
The present invention provides a kind of engagement of wafer to Barebone, including the first wafer and the second wafer, vision detection system, driving mechanism, controller, computer, and N number of corresponding telltale mark is respectively equipped on the first wafer and the second wafer；The optical path that light source generates in vision detection system is zoom optical projection system, and zoom function is realized by configuring adjustable light delay device in optical path.And provide a kind of alignment methods based on the engagement of above-mentioned wafer to Barebone.Light delay device is arranged in wafer is engaged to Barebone in the present invention, overcome in traditional wafer alignment system the nonsynchronous defect of telltale mark catoptric imaging in upper and lower wafer, pass through light delay device modulation voltage, make measurement light almost while reaching the telltale mark on two wafers, the imaging basic synchronization of the image reflected from each wafer telltale mark on the image sensor can be realized, wafer alignment precision is substantially increased, smaller semiconductor subassembly is suitable for.
Description
Technical field
The present invention relates to wafer integration fields, and in particular to a kind of engagement of wafer is to Barebone and alignment methods.
Background technology
Existing wafer engagement alignment system and method, are that telltale mark is arranged on wafer, by comparing telltale mark
Desired location in detecting vision system coordinate system and measured value, calculate position of the telltale mark in wafer coordinate system and
Relative to the displacement distance of detection vision system coordinate system, it is used as position compensation by detecting the data that vision system is measured,
So that wafer high-precision alignment engagement.
Existing wafer engagement is in Barebone, two need the telltale mark of joint element there are when a determining deviation, measure
Light can not reach the telltale mark on two elements simultaneously, and alignment precision is low.Also, due to semiconductor technology continue to it is light,
The development of thin and miniaturization realizes that high-precision wafer alignment becomes particularly important, traditional wafer alignment system and method without
Method meet the higher precision needed for the smaller semiconductor subassembly of characteristic size to alignment request.
Therefore, the alignment precision for how improving wafer engagement has become the technology of those skilled in the art's urgent need to resolve and asks
Topic.
Invention content
In order to solve the above-mentioned problems in the prior art, a kind of wafer of present invention offer is engaged to Barebone, including：
N number of corresponding telltale mark is respectively equipped on first wafer and the second wafer, the first wafer and the second wafer, N is
>=1 integer；
Vision detection system is configured to detect the image for corresponding to telltale mark reflection from each wafer, vision detection system
Quantity is identical as the quantity of telltale mark on each wafer, and vision detection system includes for providing the light source for measuring light；
Driving mechanism is configured to the relative position of adjustment the first wafer and the second wafer；
Controller configures the operation of driving mechanism in order to control；
Computer is configured to the image of processing vision detection system output, calculates alignment correction data, and execute controller
Operation sequence；
Wherein, the optical path that light source generates in vision detection system is zoom optical projection system, by optical path
It configures adjustable light delay device and realizes zoom function.
Preferably, vision detection system further includes：
Collimation lens is configured to the light that collimated light source is sent out；
Graticle is configured to be superimposed pattern on object to be imaged, which can be aligned and wait for into as reference by location
As object；
Beam splitter is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A, the pattern being configured on acquisition graticle, and light path is focused on into the first wafer and the second wafer is corresponding
On telltale mark；
Lens B is configured to acquire the graduation plate pattern reflected from the first wafer and the second wafer telltale mark；
Imaging sensor is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
Telltale mark includes that crystal column surface is raised or sunken or the combination of the lens or above structure of plane；Or packet
Include optical reflection structure identical as place wafer material, identical with said lens shape.
It is processed for the ease of actual production, said lens can be replaced with to and lens shape identical as place wafer material
Identical structure.
Pattern on graticle can be fixed, and can also be variation.If variation, can be multiple fixed figures
Case breaks up plate, is switched by mechanical device；Can also be changeable pattern differentiation plate, such as DMD, lcCOS.
Preferably, the second light delay device is configured in the projecting light path of vision detection system, it is modulated anti-from each wafer
It is incident upon projecting light path's voltage of lens B.
Meanwhile the present invention also provides a kind of based on the engagement of above-mentioned wafer to the alignment methods of Barebone, includes the following steps：
One, first wafer and the second wafer are provided, N number of corresponding positioning mark is respectively equipped on the first wafer and the second wafer
Note, the integer that N is >=1；
Two, the measurement light that light source is sent out in vision detection system modulates optical path difference through light delay device, and graduation plate pattern is existed
The reflected image on each wafer telltale mark surface is imaged onto on imaging sensor；
Three, the image of imaging sensor output obtains above-mentioned reflective projection image in two wafers after computer is handled
Position in coordinate system；
Four, different telltale mark reflective projection images are compared, telltale mark alignment correction data are calculated by computer, if
Alignment correction data judge two wafer telltale mark alignments, execute wafer bonding operation in predetermined distance range；If alignment
Correction data is more than predetermined distance range, judges that two wafer telltale marks are non-aligned, then executes next step；
Five, alignment correction Data Detection result is fed back to controller by computer, is run by controller control driving mechanism,
The position of the first wafer or the second wafer or both is adjusted, wafer alignment compensation is carried out, repeats step 2 to step 4, until
Two wafer alignments execute bonding operation.
Wherein, in step 1, telltale mark includes that crystal column surface is raised or sunken or the lens or above structure of plane
Combination；Or including optical reflection structure identical as place wafer material, identical with said lens shape.
When telltale mark is for example raised or sunken stereochemical structure, two wafers can be directed in X, Y coordinates direction；
When telltale mark is planar wave catoptric arrangement, it is whether parallel that two wafers can be verified.
In step 2, by graticle, the pattern on graticle projects to not in different time for measurement light that light source is sent out
With the telltale mark surface of wafer, pattern after the reflected image on each wafer telltale mark surface is collected by vision detection system at
As on the image sensor.
Imaging sensor can project to the different moments on upper and lower wafer telltale mark surface in measurement light, take pictures respectively,
Two photos are obtained, respectively from the reflected image on different wafer telltale marks surface.
Imaging sensor can also prolonging exposure time, light will be measured and project to the reflection on upper and lower wafer telltale mark surface
Image recording modulates measurement photoelectricity in same photo, when light delay device and is depressed into V1When, it measures light and projects a pattern into first
Telltale mark on wafer modulates measurement photoelectricity when light delay device and is depressed into V2When, it measures light and projects a pattern on the second wafer
Telltale mark, by light delay device by voltage in V1、V2Two voltage values are switched fast repeatedly, quickly due to switching rate, are made
The time difference for measuring telltale mark on the second wafer of telltale mark and arrival on light the first wafer of arrival obtained under different voltages is non-
Chang Wei little, i.e., the light that measures under different voltages are almost while reaching the telltale mark on two wafers, and it is fixed from each wafer to realize
Position marks the graduation plate pattern reflected synchronous imaging on the image sensor.
Wherein, the light that light source the is sent out telltale mark on wafer for identification；
Collimation lens is used for collimated light source, and the illumination after collimation is mapped to graticle；
Graticle is inserted into the optical element in the eyepiece of an imaging system, can on object to be imaged stacking chart
Case, the pattern can be directed at object to be imaged as reference by location；
Pattern on graticle can be fixed, and can also be variation.If variation, can be multiple fixed figures
Case breaks up plate, is switched by mechanical device；Can also be changeable pattern graticle, such as DMD, lcCOS.
If graduation plate pattern can change, variation needs are synchronous with the variation of light delay device, realize different figures
Case projects to different wafer mark surfaces.
Light delay device is configured to that optical path difference can be adjusted, and realizes zoom function；
Every Shu Guang after collimation is beamed into two light paths by beam splitter；By being irradiated to the first wafer, the second crystalline substance after lens A
Telltale mark on circle；
Lens A is used to acquire the pattern on graticle, and light path is focused on the telltale mark of two wafers；
Lens B is configured to acquire the graduation plate pattern reflected from the first wafer and the second wafer telltale mark；
Imaging sensor is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
The advantage of the invention is that：Optical path in vision detection system is zoom optical projection system, can be graticle
On pattern project to different location, can realize zoom function by configuring adjustable light delay device in optical path, gram
It has taken in traditional wafer alignment system telltale mark in upper and lower wafer and has been imaged nonsynchronous defect, and provided and utilize the wafer
The method that wafer engagement alignment is executed to Barebone is engaged, is measured when light reaches different wafers by light delay device fast modulation
Voltage, due to light delay device modulation voltage switching speed quickly so that measurement light under different voltages reaches on the first wafer
Telltale mark and the time difference for reaching telltale mark on the second wafer are very small, you can realize and reflected from each wafer telltale mark
Graduation plate pattern imaging basic synchronization on the image sensor, substantially increase wafer alignment precision, be suitable for size more
Small semiconductor subassembly.
Meanwhile telltale mark includes stereoptics catoptric arrangement, can verify pair of two wafers on X, Y coordinates direction
It is accurate；When telltale mark is the combination of planar wave catoptric arrangement and stereoptics catoptric arrangement, two crystalline substances can be verified simultaneously
Whether whether circle is parallel and be aligned on X, Y coordinates direction.
Description of the drawings
Fig. 1 is wafer engagement described in the embodiment of the present invention one to the structural schematic diagram of Barebone；
Fig. 2 is wafer engagement described in the embodiment of the present invention two to the structural schematic diagram of Barebone；
Fig. 3 is wafer engagement described in the embodiment of the present invention three to the structural schematic diagram of Barebone；
Fig. 4 is wafer engagement described in the embodiment of the present invention four to the structural schematic diagram of Barebone；
Fig. 5 is wafer engagement described in the embodiment of the present invention five to the structural schematic diagram of Barebone；
Fig. 6 is wafer engagement described in the embodiment of the present invention six to the structural schematic diagram of Barebone；
Fig. 7 is wafer engagement described in the embodiment of the present invention seven to the structural schematic diagram of Barebone；
Fig. 8 is wafer engagement described in the embodiment of the present invention ten to the structural schematic diagram of Barebone；
Fig. 9 is the flow chart of the wafer engagement alignment methods described in the embodiment of the present invention；
In conjunction with attached drawing, following explanation is done to reference numeral：
100, the engagement of 200,300,400,500,600,700,800-wafers is to Barebone；102、202、302、402、
502, the 602,702,802-the first wafer；104, the 204,304,404,504,604,704,804-the second wafer；106、206、
306, the 406,506,506 ', 606,606 ', 706,706 ', 806-the first wafer telltale mark；108、208、308、408、508、
508 ', 608,608 ', 708,708 ', 808-the second wafer telltale mark；110、210、310、410、510、510’、610、
610 ', 710,710 ', 810-light sources；112,212,312,412,512,512 ', 612,612 ', 712,712 ', 812-collimation
Lens；114,214,314,414,514,514 ', 614,614 ', 714,714 ', 814-graticle；116、216、316、416、
516,516 ', 616,616 ', 716,716 ', 816-light delay device；118、218、318、418、518、518’、618、618’、
718,718 ', 818-beam splitter；120,220,320,420,520,520 ', 620,620 ', 720,720 ', 820-lens A；
122,222,322,422,522,522 ', 622,622 ', 722,722 ', 822-lens B；124、224、324、424、524、
524 ', 624,624 ', 724,724 ', 824-imaging sensors；126, it 226,326,426,526,626,726,826-calculates
Machine；128,228,328,428,528,628,728,828-controller；130、230、330、430、530、630、730、830—
Driving mechanism；832-the second light delay device.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, and not all embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art exist
The every other embodiment obtained under the premise of not making creative work, shall fall within the protection scope of the present invention.
Embodiment one
Fig. 1 shows that a kind of structure of the wafer engagement of the present invention to Barebone, wafer engagement include to Barebone：
First wafer 102 and the second wafer 104, the first wafer are equipped with a telltale mark 106, and the second wafer is equipped with position
A telltale mark 108 corresponding with telltale mark 106 is set, above-mentioned two telltale mark is crystal column surface planar lens；
Vision detection system, including：
Light source 110 measures light for providing, optical path is represented by dashed line in figure；
Collimation lens 112 is configured to the light that collimated light source is sent out；
Graticle 114 is configured to be superimposed pattern on object to be imaged, which can be aligned as reference by location
Object to be imaged；
Light delay device 116 is configured to adjustment optical path difference, make telltale mark on two wafers on the image sensor at
As basic synchronization；
Beam splitter 118 is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A120, the pattern being configured on acquisition graticle, and light path is focused on into the first wafer and the second wafer
On telltale mark；
Lens B122 is configured to acquire the graduation plate pattern reflected from the first wafer and the second wafer telltale mark；
Imaging sensor 124 is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
By each equipment in above-mentioned vision detection system, realize that detection positioning corresponds to what telltale mark reflected from each wafer
Graticle image.
Driving mechanism 130 is configured to the relative position of adjustment the first wafer and the second wafer；
Controller 128 configures the operation of driving mechanism in order to control；
Computer 126 is configured to the image of processing imaging sensor output, calculates alignment correction data, and execute control
The operation sequence of device.
Since wafer telltale mark 106,108 is planar wave catoptric arrangement, engaged to Barebone by above-mentioned wafer, it can
It is whether parallel to verify two wafers.
Embodiment two
Fig. 2 shows the wafer engagements of another structure of the invention to Barebone, and wafer engagement includes to Barebone：
First wafer 202 and the second wafer 204, the first wafer are equipped with a telltale mark 206, and the second wafer is equipped with position
A telltale mark 208 corresponding with telltale mark 206 is set, above-mentioned two telltale mark is the lens of crystal column surface protrusion；
Vision detection system, including：
Light source 210 measures light for providing, measurement light is represented by dashed line in figure；
Collimation lens 212 is configured to the light that collimated light source is sent out；
Graticle 214 is configured to be superimposed pattern on object to be imaged, which can be aligned as reference by location
Object to be imaged；
Light delay device 216 is configured to adjustment optical path difference, make telltale mark on two wafers on the image sensor at
As basic synchronization；
Beam splitter 218 is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A220, the pattern being configured on acquisition graticle, and light path is focused on into the first wafer and the second wafer
On telltale mark；
Lens B222 is configured to acquire the graduation plate pattern reflected from the first wafer and the second wafer telltale mark；
Imaging sensor 224 is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
By each equipment in above-mentioned vision detection system, realize that detection positioning corresponds to what telltale mark reflected from each wafer
Graticle image.
Driving mechanism 230 is configured to the relative position of adjustment the first wafer 202 and the second wafer 204；
Controller 228 configures the operation of driving mechanism 230 in order to control；
Computer, 226 are configured to the image that processing imaging sensor 224 exports, and calculate alignment correction data, and execute control
The operation sequence of device 228 processed.
Since wafer telltale mark 206,208 is stereochemical structure lens, is engaged to Barebone, can be tested by above-mentioned wafer
Whether two wafers of card are aligned on X, Y coordinates direction.
Embodiment three
Fig. 3 shows the wafer engagement of another structure of the invention to Barebone, the structure and crystalline substance shown in embodiment two
Circle engagement to Barebone the difference is that, the first wafer 302 be equipped with a telltale mark 306, the second wafer 304 be equipped with position
A telltale mark 308 corresponding with telltale mark 306 is set, above-mentioned two telltale mark is the lens of crystal column surface recess, same
Sample is for verifying whether two wafers are aligned on X, Y coordinates direction.
Example IV
Fig. 4 shows structure of the wafer engagement of the invention another to Barebone, is engaged with wafer described in embodiment one pair
Barebone the difference is that, light delay device 416 be arranged between beam splitter 418 and lens A420, measurement can be modulated simultaneously
Light path and projecting light path's voltage.
It is also possible to according to the needs of modulation optical path and projecting light path, light in embodiment two to embodiment three is prolonged
The position adjustment of slow device is arranged between beam splitter and lens A.
Embodiment five
Fig. 5 shows the wafer engagement of another structure of the invention to Barebone, and wafer engagement includes to Barebone：
First wafer 502 and the second wafer 504, set that there are two telltale mark 506,506 ', the second wafers on the first wafer
504 are equipped with respectively with telltale mark 506,506 ' corresponding telltale marks 508,508 ', and aforementioned four telltale mark is wafer
Surface plane lens.
In the present embodiment, the quantity of vision detection system is telltale mark on two sets, with the first wafer or the second wafer
Quantity is identical, and each vision detection system includes：
Light source 510/510 ' measures light for providing, optical path is represented by dashed line in figure；
Collimation lens 512/512 ' is configured to the light that collimated light source is sent out；
Graticle 514/514 ' is configured to be superimposed pattern on object to be imaged, which, and can as reference by location
It is directed at object to be imaged；
Light delay device 516/516 ' is configured to adjustment optical path difference, makes the telltale mark on two wafers in imaging sensor
On imaging basic synchronization；
Beam splitter 518/518 ' is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A520/520 ', the pattern being configured on acquisition graticle, and light path is focused on into the first wafer and the second crystalline substance
On round telltale mark；
Lens B522/522 ' is configured to acquire the graticle figure reflected from the first wafer and the second wafer telltale mark
Case；
Imaging sensor 524/524 ' is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
By each equipment in above-mentioned vision detection system, realize that detection positioning corresponds to what telltale mark reflected from each wafer
Graticle image.
Driving mechanism 530 is configured to the relative position of adjustment the first wafer 502 and the second wafer 504；
Controller 528 configures the operation of driving mechanism 530 in order to control；
Computer 526 is configured to the image that processing imaging sensor 524 exports, and calculates alignment correction data, and execute control
The operation sequence of device 528 processed.
Since wafer telltale mark 506,506 ', 508,508 ' is planar wave catoptric arrangement, engaged by above-mentioned wafer
To Barebone, it is whether parallel that two wafers can be verified.
Embodiment six
Fig. 6 shows the wafer engagement of another structure of the invention to Barebone, and wafer engagement includes to Barebone：
First wafer 602 and the second wafer 604, set that there are two telltale mark 606,606 ', the second wafers on the first wafer
604 are equipped with respectively with telltale mark 606,606 ' corresponding telltale marks 608,608 ', and aforementioned four telltale mark is wafer
The lens of surface bulge.
In the present embodiment, the quantity of vision detection system is telltale mark on two sets, with the first wafer or the second wafer
Quantity is identical, and each vision detection system includes：
Light source 610/610 ' measures light for providing, optical path is represented by dashed line in figure；
Collimation lens 612/612 ' is configured to the light that collimated light source is sent out；
Graticle 614/614 ' is configured to be superimposed pattern on object to be imaged, which, and can as reference by location
It is directed at object to be imaged；
Light delay device 616/616 ' is configured to adjustment optical path difference, makes the telltale mark on two wafers in imaging sensor
On imaging basic synchronization；
Beam splitter 618/618 ' is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A620/620 ', the pattern being configured on acquisition graticle, and light path is focused on into the first wafer and the second crystalline substance
On round telltale mark；
Lens B622/622 ' is configured to acquire the graticle figure reflected from the first wafer and the second wafer telltale mark
Case；
Imaging sensor 624/624 ' is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
By each equipment in above-mentioned vision detection system, realize that detection positioning corresponds to what telltale mark reflected from each wafer
Graticle image.
Driving mechanism 630 is configured to the relative position of adjustment the first wafer 602 and the second wafer 604；
Controller 628 configures the operation of driving mechanism 630 in order to control；
Computer 626 is configured to the image that processing imaging sensor 624 exports, and calculates alignment correction data, and execute control
The operation sequence of device 628 processed.
Due to the stereochemical structure that wafer telltale mark 606,606 ', 608,608 ' is protrusion, pass through the engagement pair of above-mentioned wafer
Barebone, can verify whether two wafers are aligned on X, Y coordinates direction.
Embodiment seven
Fig. 7 shows that the wafer of structure of the invention another is engaged to Barebone, with embodiment six the difference is that, often
Telltale mark on a wafer is the stereochemical structure of two recess, is equally used for two wafers of verification on X, Y coordinates direction
Whether it is aligned.
Embodiment eight
A kind of wafer described in the embodiment is engaged to Barebone, including：
There are multiple corresponding telltale marks on first wafer and the second wafer, the first wafer and the second wafer；It is described more
A telltale mark include the corresponding planar lens of the first, second crystal column surface and the first, second crystal column surface it is corresponding protrusion or
The lens of recess.
Vision detection system, quantity is identical as the quantity of telltale mark on above-mentioned each wafer, often covers vision-based detection system
System includes：
Light source measures light for providing；
Collimation lens is configured to the light that collimated light source is sent out；
Graticle is configured to be superimposed pattern on object to be imaged, which can be aligned and wait for into as reference by location
As object；
Light delay device is configured to adjustment optical path difference, makes the imaging of telltale mark on the image sensor on two wafers
Basic synchronization；
Beam splitter is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A is configured to acquire the pattern on graticle, and light path is focused on to the positioning of the first wafer and the second wafer
On label；
Lens are configured to acquire the graduation plate pattern reflected from the first wafer and the second wafer telltale mark；
Imaging sensor is configured to capture the projecting image data from the lens B graduation plate patterns acquired；
By each equipment in above-mentioned vision detection system, realize that detection positioning corresponds to what telltale mark reflected from each wafer
Graticle image.
Driving mechanism is configured to the relative position of adjustment the first wafer and the second wafer.
Controller configures the operation of driving mechanism in order to control.
Computer is configured to the image of processing imaging sensor output, calculates alignment correction data, and execute controller
Operation sequence.
Due to the combination that wafer telltale mark is planar wave catoptric arrangement and stereoptics catoptric arrangement, pass through the implementation
Wafer engagement described in example to Barebone, can verify simultaneously two wafers it is whether parallel and on X, Y coordinates direction whether
Alignment.
Embodiment nine
The wafer engagement that the embodiment provides is to Barebone, by any wafer engagement alignment in embodiment five to embodiment eight
The position adjustment of light delay device is arranged between beam splitter and lens A in system, can modulate optical path and throwing simultaneously in this way
Shadow light path voltage.
Embodiment ten
Fig. 8 shows that another wafer engagement of the invention to the structure of Barebone, is engaged with the wafer described in embodiment one
To Barebone the difference is that, in addition in the optical path in vision detection system configure light delay device 816 other than, in vision
In the projecting light path of detecting system, such as the second light delay device 832, the second light are set between beam splitter 818 and lens B822
The modulated projecting light path's voltage that lens B is reflexed to from each wafer of delayer 832.
It equally, can be according to the needs of modulation projecting light path, in embodiment two to embodiment three, embodiment five to embodiment eight
Second light delay device is set in the projecting light path of described vision detection system, and modulation reflexes to the throwing of lens B from each wafer
Shadow light path voltage.
Embodiment 11
It, can be by the first wafer, the second wafer in above-described embodiment for the ease of the production and processing of crystal column surface telltale mark
On lens replace with optical reflection structure identical as place wafer material, identical with lens shape.
Fig. 9 is the alignment methods flow taken based on the wafer engagement align structures described in the above embodiment of the present invention
Figure：
Step 901, the first wafer and the second wafer are provided, wherein having on the first wafer and the second wafer multiple corresponding
Telltale mark；
Step 902, the measurement light that light source is sent out in vision detection system modulates optical path difference through light delay device, by graticle figure
Reflected image of the case on each wafer telltale mark surface is imaged onto on imaging sensor；
Specifically, for the measurement light that light source is sent out by graticle, the pattern on graticle projects to difference in different time
The telltale mark surface of wafer, pattern are imaged after the reflected image on each wafer telltale mark surface is collected by vision detection system
On the image sensor；
Imaging sensor can project to the different moments on upper and lower wafer telltale mark surface in measurement light, take pictures respectively,
Two photos are obtained, respectively from the reflected image on different wafer telltale marks surface.
Imaging sensor can also prolonging exposure time, light will be measured and project to the reflection on upper and lower wafer telltale mark surface
Image recording modulates measurement photoelectricity in same photo, when light delay device and is depressed into V1When, it measures light and projects a pattern into first
Telltale mark on wafer modulates measurement photoelectricity when light delay device and is depressed into V2When, it measures light and projects a pattern on the second wafer
Telltale mark, by light delay device by voltage in V1、V2Two voltage values are switched fast repeatedly, quickly due to switching rate, are made
The time difference for measuring telltale mark on the second wafer of telltale mark and arrival on light the first wafer of arrival obtained under different voltages is non-
Chang Wei little, i.e., the light that measures under different voltages are almost while reaching the telltale mark on two wafers, and it is fixed from each wafer to realize
Basic synchronization is imaged the graduation plate pattern of position label reflection on the image sensor；
Step 903, the image of imaging sensor output obtains above-mentioned reflective projection image at two after computer is handled
Position in wafer coordinate system；
Step 904, different telltale mark reflective projection images are compared, telltale mark alignment correction number is calculated by computer
According to if alignment correction data in predetermined distance range, judge two wafer telltale mark alignments, execution wafer bonding operation；
If alignment correction data are more than predetermined distance range, judge that two wafer telltale marks are non-aligned, then follow the steps 905；
Step 905, alignment correction Data Detection result is fed back to controller by computer, and driving mechanism is controlled by controller
Operation adjusts the position of the first wafer or second wafer or both, carries out wafer alignment compensation, repeats step 902 to 904,
Until two wafer alignments.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of wafer is engaged to Barebone, including：
N number of corresponding telltale mark is respectively equipped on first wafer and the second wafer, the first wafer and the second wafer, N is >=1
Integer；
Vision detection system is configured to detect the image for corresponding to telltale mark reflection from each wafer, the quantity of vision detection system
Identical as the quantity of telltale mark on each wafer, vision detection system includes for providing the light source for measuring light；
Driving mechanism is configured to the relative position of adjustment the first wafer and the second wafer, carries out wafer alignment compensation；
Controller configures the operation of driving mechanism in order to control；
Computer is configured to the image of processing vision detection system output, calculates alignment correction data, and execute the behaviour of controller
Make program；
It is characterized in that：The optical path that light source generates in vision detection system is zoom optical projection system, by optical path
The middle adjustable light delay device of configuration realizes zoom function.
2. a kind of wafer engagement according to claim 1 is to Barebone, it is characterised in that：Telltale mark includes crystal column surface
The combination of raised or sunken or plane lens or above structure；Or including identical as place wafer material and above-mentioned
The identical optical reflection structure of mirror shape.
3. a kind of wafer engagement according to claim 1 is to Barebone, it is characterised in that：Each vision detection system further includes
With lower structure：
Collimation lens is configured to the light that collimated light source is sent out；
Graticle is configured to be superimposed pattern on object to be imaged, which can be directed at object to be imaged as reference by location
Body；
Beam splitter is configured to every Shu Guang after collimating and is beamed into two light paths；
Lens A, the pattern being configured on acquisition graticle, and light path is focused on into the first wafer and the corresponding positioning of the second wafer
On label；
Lens B is configured to acquire the graduation plate pattern reflected from the first wafer and the second wafer telltale mark；
Imaging sensor is configured to capture the projecting image data from the lens B graduation plate patterns acquired.
4. a kind of wafer engagement according to claim 3 is to Barebone, it is characterised in that：Graduation plate pattern is fixed.
5. a kind of wafer engagement according to claim 3 is to Barebone, it is characterised in that：Graduation plate pattern is variation,
For multiple fixed pattern graticles, switched by mechanical device；Or it is changeable pattern graticle.
6. a kind of wafer engagement according to claim 1 is to Barebone, it is characterised in that：In the projection of vision detection system
The second light delay device is configured in light path.
7. a kind of wafer engages alignment methods, include the following steps：
One, first wafer and the second wafer are provided, N number of corresponding telltale mark, N are respectively equipped on the first wafer and the second wafer
For >=1 integer；
Two, the measurement light that light source is sent out in vision detection system modulates optical path difference through light delay device, by graduation plate pattern in each crystalline substance
The reflected image on circle telltale mark surface is imaged onto on imaging sensor；
Three, the image of imaging sensor output obtains above-mentioned reflective projection image in two wafer coordinates after computer is handled
Position in system；
Four, different telltale mark reflective projection images are compared, telltale mark alignment correction data are calculated by computer, if alignment
Correction data judges two wafer telltale mark alignments, executes wafer bonding operation in predetermined distance range；If alignment correction
Data are more than predetermined distance range, judge that two wafer telltale marks are non-aligned, then execute next step；
Five, alignment correction Data Detection result is fed back to controller by computer, by controller control driving mechanism operation, adjustment
The position of first wafer or the second wafer or both carries out wafer alignment compensation, repeats step 2 to step 4, until two
Wafer alignment.
8. a kind of wafer according to claim 7 engages alignment methods, it is characterised in that：In step 2, what light source was sent out
Light is measured by graticle, the pattern on graticle projects to the telltale mark surface of different wafers in different time, and pattern exists
The reflected image on each wafer telltale mark surface is imaged on the image sensor after being collected by vision detection system.
9. a kind of wafer according to claim 8 engages alignment methods, it is characterised in that：Imaging sensor is measuring light throwing
Shadow is taken pictures respectively to the different moments on upper and lower wafer telltale mark surface, obtains two photos, is positioned respectively from different wafers
Mark the reflected image on surface.
10. a kind of wafer according to claim 8 engages alignment methods, it is characterised in that：Imaging sensor prolonged exposure
Time, the reflected image that measurement light is projected to upper and lower wafer telltale mark surface are recorded in same photo.
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