CN108598032B - Wafer bonding alignment system and alignment method - Google Patents
Wafer bonding alignment system and alignment method Download PDFInfo
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- CN108598032B CN108598032B CN201810499801.5A CN201810499801A CN108598032B CN 108598032 B CN108598032 B CN 108598032B CN 201810499801 A CN201810499801 A CN 201810499801A CN 108598032 B CN108598032 B CN 108598032B
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
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- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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Abstract
The invention provides a wafer bonding alignment system, which comprises a first wafer, a second wafer, a visual detection system, a driving mechanism, a controller and a computer, wherein N corresponding positioning marks are respectively arranged on the first wafer and the second wafer; a measurement light path generated by a light source in the visual detection system is a zooming projection system, and a zooming function is realized by configuring a light-adjustable delayer in the measurement light path. And provides an alignment method based on the wafer bonding alignment system. The optical delayer is arranged in the wafer joint alignment system, the defect that the reflection imaging of the positioning marks in the upper wafer and the lower wafer in the traditional wafer alignment system is not synchronous is overcome, the voltage is modulated by the optical delayer, the measuring light almost reaches the positioning marks on the two wafers at the same time, the imaging of the images reflected from the positioning marks of the wafers on the image sensor can be basically synchronous, the wafer alignment precision is greatly improved, and the method is suitable for semiconductor components with smaller sizes.
Description
Technical Field
The invention relates to the field of wafer integration, in particular to a wafer bonding alignment system and an alignment method.
Background
The existing wafer joint alignment system and method are that positioning marks are arranged on a wafer, the position of the positioning marks in a wafer coordinate system and the moving distance of the positioning marks relative to a detection vision system coordinate system are calculated by comparing expected positions and measured values of the positioning marks in the detection vision system coordinate system, and data measured by the detection vision system are used as position compensation, so that the wafer is aligned and jointed in a high-precision mode.
In the existing wafer jointing alignment system, when the positioning marks of two elements to be jointed have a certain distance, the measuring light cannot reach the positioning marks on the two elements at the same time, and the alignment precision is low. Moreover, as semiconductor technology continues to advance toward light weight, thinness, and miniaturization, it becomes especially important to achieve high precision wafer alignment, and conventional wafer alignment systems and methods are unable to meet the higher precision alignment requirements required for smaller feature sizes of semiconductor devices.
Therefore, how to improve the alignment accuracy of wafer bonding has become an urgent technical problem to be solved by those skilled in the art.
Disclosure of Invention
To solve the above problems in the prior art, the present invention provides a wafer bonding alignment system, comprising:
the wafer positioning device comprises a first wafer and a second wafer, wherein N corresponding positioning marks are respectively arranged on the first wafer and the second wafer, and N is an integer larger than or equal to 1;
a vision inspection system configured to inspect images reflected from the corresponding alignment marks on each wafer, the number of vision inspection systems being the same as the number of alignment marks on each wafer, the vision inspection system including a light source for providing measurement light;
a drive mechanism configured to adjust the relative positions of the first wafer and the second wafer;
a controller configured to control operation of the drive mechanism;
a computer configured to process an image output from the vision inspection system, calculate alignment correction data, and execute an operation program of the controller;
the measurement light path generated by the light source in the visual detection system is a zooming projection system, and the zooming function is realized by configuring the light-adjustable delayer in the measurement light path.
Preferably, the visual inspection system further comprises:
a collimating lens configured to collimate light emitted by the light source;
a reticle configured to superimpose a pattern on an object to be imaged, the pattern serving as a position reference and capable of being aligned with the object to be imaged;
a beam splitter configured to split each of the collimated light beams into two optical paths;
the lens A is configured to collect the patterns on the reticle and focus the light path on the positioning marks corresponding to the first wafer and the second wafer;
a lens B configured to capture reticle patterns reflected from the first and second wafer alignment marks;
an image sensor configured to capture projection image data of the reticle pattern collected from the lens B.
The positioning mark comprises a convex or concave or plane lens on the surface of the wafer or the combination of the lens; or the optical reflection structure is made of the same material as the wafer and has the same shape as the lens.
In order to facilitate the actual production and processing, the lens can be replaced by a structure which is the same as the material of the wafer and the shape of the lens.
The pattern on the reticle may be fixed or may vary. If it is changed, it can be a plurality of fixed pattern differentiation plates, and switched by mechanical device; it may also be a variable pattern differentiation plate such as DMD, lcCOS, etc.
Preferably, a second optical retarder is disposed in the projection light path of the vision inspection system, and the projection light path voltage reflected from each wafer to the lens B can be modulated.
Meanwhile, the invention also provides an alignment method based on the wafer bonding alignment system, which comprises the following steps:
providing a first wafer and a second wafer, wherein N corresponding positioning marks are respectively arranged on the first wafer and the second wafer, and N is an integer more than or equal to 1;
secondly, modulating optical path difference through an optical delayer by measuring light emitted by a light source in the visual detection system, and imaging a reflection image of the reticle pattern on the surface of each wafer positioning mark onto an image sensor;
processing the image output by the image sensor by a computer to obtain the positions of the reflection image in the two wafer coordinate systems;
comparing the reflection images of different positioning marks, calculating positioning mark alignment correction data through a computer, judging that the two wafer positioning marks are aligned if the alignment correction data are within a preset distance range, and executing wafer bonding operation; if the alignment correction data is larger than the preset distance range, judging that the two wafer positioning marks are not aligned, and executing the next step;
and fifthly, the computer feeds back the detection result of the alignment correction data to the controller, the controller controls the driving mechanism to operate, the positions of the first wafer or the second wafer or both the first wafer and the second wafer are adjusted, wafer alignment compensation is carried out, the second step to the fourth step are repeated until the two wafers are aligned, and bonding operation is carried out.
In the first step, the positioning mark comprises a lens with a convex or concave or plane surface of the wafer or the combination of the above structures; or the optical reflection structure is made of the same material as the wafer and has the same shape as the lens.
When positioning a three-dimensional structure marked as, for example, a protrusion or a depression, two wafers may be aligned in the X, Y coordinate direction; when the positioning mark is a planar optical reflection structure, it can be verified whether the two wafers are parallel.
In the second step, the measuring light emitted by the light source passes through the reticle, the patterns on the reticle are projected to the positioning mark surfaces of different wafers at different time, and the reflected images of the patterns on the positioning mark surfaces of the wafers are collected by the visual detection system and then imaged on the image sensor.
The image sensor can take pictures respectively at different moments when the measuring light is projected to the surfaces of the upper wafer positioning mark and the lower wafer positioning mark to obtain two pictures respectively from the reflection images of the surfaces of the different wafer positioning marks.
The image sensor can also prolong the exposure time, record the reflection image of the measuring light projected on the surfaces of the upper and lower wafer positioning marks in the same picture, and when the optical delayer modulates the measuring light voltage to V1When the measuring light projects the pattern to the positioning mark on the first wafer, the optical delayer modulates the measuring light voltage to V2While the measuring light projects a pattern onto the alignment marks on the second wafer, the voltage is set at V by the optical retarder1、V2The two voltage values are repeatedly and rapidly switched, and the switching speed is high, so that the time difference between the measuring light under different voltages reaching the positioning mark on the first wafer and reaching the positioning mark on the second wafer is very small, namely the measuring light under different voltages almost simultaneously reaches the positioning marks on the two wafers, and the synchronous imaging of the reticle pattern reflected by each wafer positioning mark on the image sensor is realized.
Wherein, the light emitted by the light source is used for identifying the positioning mark on the wafer;
the collimating lens is used for collimating the light source and irradiating the collimated light to the reticle;
the reticle is an optical element inserted into an eyepiece of an imaging system, can superimpose a pattern on an object to be imaged, the pattern serving as a position reference and capable of being aligned with the object to be imaged;
the pattern on the reticle may be fixed or may vary. If it is changed, it can be a plurality of fixed pattern differentiation plates, and switched by mechanical device; but also variable pattern reticles such as DMD, lcCOS, etc.
If the reticle pattern is variable, the variation needs to be synchronized with the variation of the optical retarder to achieve the projection of different patterns onto different wafer mark surfaces.
The optical delayer is configured to adjust the optical path difference and realize the zooming function;
the beam splitter splits each collimated beam into two light paths; irradiating the positioning marks on the first wafer and the second wafer after passing through the lens A;
the lens A is used for collecting patterns on the reticle and focusing a light path on the positioning marks of the two wafers;
a lens B configured to capture reticle patterns reflected from the first and second wafer alignment marks;
an image sensor configured to capture projection image data of the reticle pattern collected from the lens B.
The invention has the advantages that: the measuring light path in the visual detection system is a zoom projection system, can project the pattern on the reticle to different positions, the zoom function can be realized by arranging the light-adjustable delayer in the measuring light path, the defect that the imaging of the positioning marks in the upper wafer and the lower wafer in the traditional wafer alignment system is not synchronous is overcome, and provides a method for performing wafer bonding alignment by using the wafer bonding alignment system, rapidly modulating the voltage of the measuring light reaching different wafers through an optical delayer, because the voltage switching speed modulated by the optical delayer is fast, the time difference between the measuring light under different voltages reaching the positioning mark on the first wafer and reaching the positioning mark on the second wafer is very small, the imaging of the reticle patterns reflected from the wafer positioning marks on the image sensor can be basically synchronized, the wafer alignment precision is greatly improved, and the method is suitable for semiconductor assemblies with smaller sizes.
Meanwhile, the positioning mark comprises a three-dimensional optical reflection structure, and the alignment of the two wafers in the X, Y coordinate direction can be verified; when the alignment marks are a combination of planar and volumetric optical reflective structures, it can be verified that the two wafers are parallel and aligned in the X, Y coordinate direction at the same time.
Drawings
FIG. 1 is a schematic diagram illustrating a wafer bonding alignment system according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a wafer bonding alignment system according to a second embodiment of the present invention;
FIG. 3 is a schematic diagram of a wafer bonding alignment system according to a third embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a wafer bonding alignment system according to a fourth embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a wafer bonding alignment system according to a fifth embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a wafer bonding alignment system according to a sixth embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a wafer bonding alignment system according to a seventh embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a wafer bonding alignment system according to a tenth embodiment of the present invention;
FIG. 9 is a flowchart illustrating a wafer bonding alignment method according to an embodiment of the present invention;
the following description of the reference numerals refers to the accompanying drawings:
100. 200, 300, 400, 500, 600, 700, 800-wafer bonding alignment system; 102. 202, 302, 402, 502, 602, 702, 802 — first wafer; 104. 204, 304, 404, 504, 604, 704, 804 — second wafer; 106. 206, 306, 406, 506 ', 606 ', 706 ', 806 — first wafer positioning mark; 108. 208, 308, 408, 508 ', 608 ', 708 ', 808 — second wafer positioning mark; 110. 210, 310, 410, 510 ', 610 ', 710 ', 810 — a light source; 112. 212, 312, 412, 512 ', 612 ', 712 ', 812-collimating lens; 114. 214, 314, 414, 514 ', 614 ', 714 ', 814 — reticle; 116. 216, 316, 416, 516 ', 616 ', 716 ', 816 — an optical retarder; 118. 218, 318, 418, 518 ', 618 ', 718 ', 818-beam splitter; 120. 220, 320, 420, 520 ', 620 ', 720 ', 820-lens a; 122. 222, 322, 422, 522 ', 622 ', 722 ', 822-lens B; 124. 224, 324, 424, 524 ', 624 ', 724 ', 824 — image sensor; 126. 226, 326, 426, 526, 626, 726, 826 — computer; 128. 228, 328, 428, 528, 628, 728, 828 — a controller; 130. 230, 330, 430, 530, 630, 730, 830 — a drive mechanism; 832 — second optical retarder.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example one
FIG. 1 shows the structure of a wafer bonding alignment system of the present invention, which comprises:
a first wafer 102 and a second wafer 104, wherein the first wafer is provided with a positioning mark 106, the second wafer is provided with a positioning mark 108 corresponding to the positioning mark 106 in position, and the two positioning marks are wafer surface plane lenses;
a visual inspection system, comprising:
a light source 110 for supplying measuring light, the measuring light path being indicated by a dotted line;
a collimating lens 112 configured to collimate light emitted by the light source;
a reticle 114 configured to superimpose a pattern on an object to be imaged, the pattern serving as a positional reference and capable of being aligned with the object to be imaged;
an optical delayer 116 configured to adjust an optical path difference to substantially synchronize the imaging of the positioning marks on the two wafers on the image sensor;
a beam splitter 118 configured to split each of the collimated light beams into two optical paths;
a lens A120 configured to collect a pattern on the reticle and focus an optical path on the positioning marks of the first wafer and the second wafer;
a lens B122 configured to capture the reticle pattern reflected from the first and second wafer alignment marks;
an image sensor 124 configured to capture projection image data of the reticle pattern collected from the lens B.
Through each device in the visual detection system, the reticle image reflected from the corresponding positioning mark of each wafer is detected and positioned.
A drive mechanism 130 configured to adjust the relative positions of the first wafer and the second wafer;
a controller 128 configured to control operation of the drive mechanism;
a computer 126 configured to process the image output from the image sensor, calculate alignment correction data, and execute an operation program of the controller.
Since the wafer alignment marks 106, 108 are flat optical reflection structures, it can be verified whether the two wafers are parallel by the wafer bonding alignment system.
Example two
FIG. 2 illustrates another configuration of the wafer bonding alignment system of the present invention, which includes:
a first wafer 202 and a second wafer 204, wherein the first wafer is provided with a positioning mark 206, the second wafer is provided with a positioning mark 208 corresponding to the positioning mark 206, and the two positioning marks are lenses with convex surfaces;
a visual inspection system, comprising:
a light source 210 for providing measuring light, indicated by dashed lines;
a collimating lens 212 configured to collimate light emitted by the light source;
a reticle 214 configured to superimpose a pattern on an object to be imaged, the pattern serving as a positional reference and capable of being aligned with the object to be imaged;
an optical delayer 216 configured to adjust an optical path difference to substantially synchronize the imaging of the positioning marks on the two wafers on the image sensor;
a beam splitter 218 configured to split each of the collimated light beams into two optical paths;
a lens A220 configured to collect a pattern on the reticle and focus the light path on the positioning marks of the first wafer and the second wafer;
a lens B222 configured to capture the reticle pattern reflected from the first and second wafer alignment marks;
an image sensor 224 configured to capture projection image data of the reticle pattern acquired from the lens B.
Through each device in the visual detection system, the reticle image reflected from the corresponding positioning mark of each wafer is detected and positioned.
A drive mechanism 230 configured to adjust the relative positions of the first wafer 202 and the second wafer 204;
a controller 228 configured to control operation of the drive mechanism 230;
the computer 226 is configured to process the image output from the image sensor 224, calculate alignment correction data, and execute an operation program of the controller 228.
Since the wafer alignment marks 206, 208 are three-dimensional lenses, it is possible to verify that the two wafers are aligned in the X, Y coordinate direction by the wafer bonding alignment system described above.
EXAMPLE III
Fig. 3 shows a wafer bonding alignment system according to another structure of the present invention, which is different from the wafer bonding alignment system according to the second embodiment in that a positioning mark 306 is disposed on the first wafer 302, and a positioning mark 308 corresponding to the positioning mark 306 is disposed on the second wafer 304, which are both lenses with concave wafer surfaces, and are also used for verifying whether the two wafers are aligned in the X, Y coordinate direction.
Example four
Fig. 4 shows the structure of another wafer bonding alignment system of the present invention, which is different from the wafer bonding alignment system of the first embodiment in that an optical retarder 416 is disposed between a beam splitter 418 and a lens a420, and can modulate the voltage of the measurement optical path and the projection optical path simultaneously.
Also, the position adjustment of the optical retarder in the second to third embodiments may be provided between the beam splitter and the lens a according to the need of modulating the measurement light path and the projection light path.
EXAMPLE five
FIG. 5 illustrates another configuration of the wafer bonding alignment system of the present invention, comprising:
the first wafer 502 and the second wafer 504, two positioning marks 506, 506 ' are provided on the first wafer, and positioning marks 508, 508 ' corresponding to the positioning marks 506, 506 ' are provided on the second wafer 504, respectively.
In this embodiment, the number of the vision inspection systems is two, and is the same as the number of the positioning marks on the first wafer or the second wafer, and each vision inspection system includes:
a light source 510/510' for providing measuring light, the measuring light path being indicated by a dashed line;
a collimating lens 512/512' configured to collimate light emitted by the light source;
a reticle 514/514' configured to overlay a pattern on an object to be imaged, the pattern serving as a positional reference and capable of being aligned with the object to be imaged;
an optical retarder 516/516' configured to adjust the optical path difference such that the imaging of the alignment marks on the two wafers on the image sensor is substantially synchronized;
a beam splitter 518/518' configured to split each collimated beam into two optical paths;
a lens a 520/520' configured to capture a pattern on the reticle and focus the optical path on the alignment marks of the first and second wafers;
lens B522/522' configured to capture reticle patterns reflected from the first and second wafer alignment marks;
an image sensor 524/524' is configured to capture projection image data of the reticle pattern acquired from lens B.
Through each device in the visual detection system, the reticle image reflected from the corresponding positioning mark of each wafer is detected and positioned.
A drive mechanism 530 configured to adjust the relative positions of the first wafer 502 and the second wafer 504;
a controller 528 configured to control operation of the drive mechanism 530;
the computer 526 is configured to process the image output by the image sensor 524, calculate alignment correction data, and execute an operating program for the controller 528.
Since the wafer alignment marks 506, 506 ', 508' are planar optical reflection structures, it can be verified whether the two wafers are parallel by the wafer bonding alignment system.
EXAMPLE six
FIG. 6 illustrates another configuration of the wafer bonding alignment system of the present invention, comprising:
the first wafer 602 has two positioning marks 606 and 606 ' thereon, and the second wafer 604 has positioning marks 608 and 608 ' thereon, which correspond to the positioning marks 606 and 606 ', respectively.
In this embodiment, the number of the vision inspection systems is two, and is the same as the number of the positioning marks on the first wafer or the second wafer, and each vision inspection system includes:
a light source 610/610' for providing measuring light, the measuring light path being indicated by a dashed line;
a collimating lens 612/612' configured to collimate light emitted by the light source;
a reticle 614/614' configured to overlay a pattern on an object to be imaged, the pattern serving as a positional reference and capable of being aligned with the object to be imaged;
an optical retarder 616/616' configured to adjust the optical path difference such that the imaging of the alignment marks on the two wafers on the image sensor is substantially synchronized;
a beam splitter 618/618' configured to split each collimated beam into two optical paths;
the lens A620/620' is configured to collect patterns on the reticle and focus the light path on the positioning marks of the first wafer and the second wafer;
lens B622/622' configured to capture the reticle pattern reflected from the first and second wafer alignment marks;
an image sensor 624/624' is configured to capture projection image data of the reticle pattern acquired from lens B.
Through each device in the visual detection system, the reticle image reflected from the corresponding positioning mark of each wafer is detected and positioned.
A drive mechanism 630 configured to adjust the relative positions of the first wafer 602 and the second wafer 604;
a controller 628 configured to control operation of the drive mechanism 630;
the computer 626 is configured to process the image output from the image sensor 624, calculate alignment correction data, and execute an operating program of the controller 628.
Since the wafer positioning marks 606, 606 ', 608' are raised three-dimensional structures, it can be verified whether the two wafers are aligned in the X, Y coordinate direction by the wafer bonding alignment system.
EXAMPLE seven
Fig. 7 shows a wafer bonding alignment system of another structure of the present invention, which is different from the sixth embodiment in that the positioning marks on each wafer are three-dimensional structures with two recesses, which are also used to verify whether two wafers are aligned in the X, Y coordinate direction.
Example eight
A wafer bonding alignment system according to this embodiment includes:
the wafer processing device comprises a first wafer and a second wafer, wherein the first wafer and the second wafer are provided with a plurality of corresponding positioning marks; the plurality of positioning marks comprise planar lenses corresponding to the first and second wafer surfaces and convex or concave lenses corresponding to the first and second wafer surfaces.
The number of the visual detection systems is the same as that of the positioning marks on each wafer, and each set of visual detection system comprises:
a light source for providing measurement light;
a collimating lens configured to collimate light emitted by the light source;
a reticle configured to superimpose a pattern on an object to be imaged, the pattern serving as a position reference and capable of being aligned with the object to be imaged;
the optical delayer is configured to adjust the optical path difference, so that the imaging of the positioning marks on the two wafers on the image sensor is basically synchronous;
a beam splitter configured to split each of the collimated light beams into two optical paths;
the lens A is configured to collect patterns on the reticle and focus the light path on the positioning marks of the first wafer and the second wafer;
a lens configured to capture reticle patterns reflected from the first and second wafer alignment marks;
an image sensor configured to capture projection image data of the reticle pattern collected from the lens B;
through each device in the visual detection system, the reticle image reflected from the corresponding positioning mark of each wafer is detected and positioned.
A drive mechanism configured to adjust a relative position of the first wafer and the second wafer.
A controller configured to control operation of the drive mechanism.
A computer configured to process an image output from the image sensor, calculate alignment correction data, and execute an operation program of the controller.
Due to the combination of the planar optical reflection structure and the stereoscopic optical reflection structure of the wafer positioning mark, whether the two wafers are parallel and whether the two wafers are aligned in the X, Y coordinate direction can be verified simultaneously by the wafer bonding alignment system described in this embodiment.
Example nine
In the wafer bonding alignment system provided in this embodiment, the position adjustment of the optical retarder in the wafer bonding alignment system according to any one of the fifth to eighth embodiments is disposed between the beam splitter and the lens a, so that the voltage of the measurement optical path and the voltage of the projection optical path can be modulated simultaneously.
Example ten
Fig. 8 shows another structure of the wafer bonding alignment system according to the present invention, which is different from the wafer bonding alignment system according to the first embodiment in that, in addition to the optical retarder 816 is disposed in the measurement optical path of the vision inspection system, a second optical retarder 832 is disposed in the projection optical path of the vision inspection system, for example, between the beam splitter 818 and the lens B822, and the second optical retarder 832 can modulate the projection optical path voltage reflected from each wafer to the lens B.
Similarly, according to the requirement of modulating the projection light path, a second optical retarder may be disposed in the projection light path of the vision inspection system described in the second to third embodiments and the fifth to eighth embodiments, so as to modulate the projection light path voltage reflected from each wafer to the lens B.
EXAMPLE eleven
In order to facilitate the production and processing of the positioning marks on the wafer surface, the lenses on the first wafer and the second wafer in the above embodiments may be replaced by optical reflection structures having the same material and shape as the lenses on the wafer.
FIG. 9 is a flowchart of an alignment method adopted by the wafer bonding alignment structure according to the above embodiment of the present invention:
specifically, measuring light emitted by a light source passes through a reticle, patterns on the reticle are projected to the surfaces of positioning marks of different wafers at different time, and reflected images of the patterns on the surfaces of the positioning marks of the wafers are collected by a visual detection system and then imaged on an image sensor;
the image sensor can take pictures respectively at different moments when the measuring light is projected to the surfaces of the upper wafer positioning mark and the lower wafer positioning mark to obtain two pictures respectively from the reflection images of the surfaces of the different wafer positioning marks.
The image sensor can also prolong the exposure time, record the reflection image of the measuring light projected on the surfaces of the upper and lower wafer positioning marks in the same picture, and when the optical delayer modulates the measuring light voltage to V1When the measuring light projects the pattern to the positioning mark on the first wafer, the optical delayer modulates the measuring light voltage to V2While the measuring light projects a pattern onto the alignment marks on the second wafer, the voltage is set at V by the optical retarder1、V2The two voltage values are repeatedly and rapidly switched, and due to the rapid switching speed, the time difference between the measurement light under different voltages reaching the positioning mark on the first wafer and reaching the positioning mark on the second wafer is very small, namely the measurement light under different voltages almost simultaneously reaches the positioning marks on the two wafers, so that the reticle patterns reflected by the positioning marks of the wafers are basically and synchronously imaged on the image sensor;
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A wafer bonding alignment system, comprising:
the wafer positioning device comprises a first wafer and a second wafer, wherein N corresponding positioning marks are respectively arranged on the first wafer and the second wafer, and N is an integer larger than or equal to 1;
a vision inspection system configured to inspect images reflected from the corresponding alignment marks on each wafer, the number of vision inspection systems being the same as the number of alignment marks on each wafer, the vision inspection system including a light source for providing measurement light; the visual inspection system comprises the following structures:
a collimating lens configured to collimate light emitted by the light source;
a reticle configured to superimpose a pattern on an object to be imaged, the pattern serving as a position reference and capable of being aligned with the object to be imaged;
a beam splitter configured to split each of the collimated light beams into two optical paths;
the lens A is configured to collect the patterns on the reticle and focus the light path on the positioning marks corresponding to the first wafer and the second wafer;
a lens B configured to capture reticle patterns reflected from the first and second wafer alignment marks;
an image sensor configured to capture projection image data of the reticle pattern collected from the lens B;
the driving mechanism is configured to adjust the relative positions of the first wafer and the second wafer to perform wafer alignment compensation;
a controller configured to control operation of the drive mechanism;
a computer configured to process an image output from the vision inspection system, calculate alignment correction data, and execute an operation program of the controller;
the method is characterized in that: a measurement light path generated by a light source in the visual detection system is a zooming projection system, and a zooming function is realized by configuring a light-adjustable delayer in the measurement light path.
2. The wafer bonding alignment system of claim 1, wherein: the positioning mark comprises a convex or concave or plane lens on the surface of the wafer or the combination of the lens; or the optical reflection structure is made of the same material as the wafer and has the same shape as the lens.
3. The wafer bonding alignment system of claim 1, wherein: the reticle pattern is fixed.
4. The wafer bonding alignment system of claim 1, wherein: the reticle pattern is variable, being a plurality of fixed pattern reticles, switched by mechanical means.
5. The wafer bonding alignment system of claim 1, wherein: a second optical retarder is disposed in a projection optical path of the vision inspection system.
6. A wafer bonding alignment method comprises the following steps:
providing a first wafer and a second wafer, wherein N corresponding positioning marks are respectively arranged on the first wafer and the second wafer, and N is an integer more than or equal to 1;
secondly, modulating optical path difference through an optical delayer by measuring light emitted by a light source in the visual detection system, and imaging a reflection image of the reticle pattern on the surface of each wafer positioning mark onto an image sensor;
processing the image output by the image sensor by a computer to obtain the positions of the reflection image in the two wafer coordinate systems;
comparing the reflection images of different positioning marks, calculating positioning mark alignment correction data through a computer, judging that the two wafer positioning marks are aligned if the alignment correction data are within a preset distance range, and executing wafer bonding operation; if the alignment correction data is larger than the preset distance range, judging that the two wafer positioning marks are not aligned, and executing the next step;
and fifthly, the computer feeds back the detection result of the alignment correction data to the controller, the controller controls the driving mechanism to operate, the positions of the first wafer or the second wafer or both the first wafer and the second wafer are adjusted, wafer alignment compensation is carried out, and the second step to the fourth step are repeated until the two wafers are aligned.
7. The wafer bonding alignment method of claim 6, wherein: in the second step, the measuring light emitted by the light source passes through the reticle, the patterns on the reticle are projected to the positioning mark surfaces of different wafers at different time, and the reflected images of the patterns on the positioning mark surfaces of the wafers are collected by the visual detection system and then imaged on the image sensor.
8. The wafer bonding alignment method of claim 6, wherein: and the image sensor respectively takes pictures at different moments when the measuring light is projected on the surfaces of the upper and lower wafer positioning marks to obtain two pictures respectively from the reflection images of the surfaces of the different wafer positioning marks.
9. The wafer bonding alignment method of claim 6, wherein: the image sensor extends the exposure time and records the reflection images of the measuring light projected on the surfaces of the upper and lower wafer positioning marks in the same picture.
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| WO2019218285A1 (en) | 2018-05-16 | 2019-11-21 | Yangtze Memory Technologies Co., Ltd. | Methods and systems for wafer bonding alignment compensation |
| CN109904105B (en) * | 2019-01-29 | 2021-03-30 | 长江存储科技有限责任公司 | Wafer bonding apparatus and wafer alignment method |
| CN110444492A (en) * | 2019-08-07 | 2019-11-12 | 武汉新芯集成电路制造有限公司 | The recognition methods and wafer alignment method of alignment mark |
| CN110993490A (en) * | 2019-12-30 | 2020-04-10 | 长春长光圆辰微电子技术有限公司 | Method for realizing heterogeneous bonding of chips with different sizes |
| CN111238412B (en) * | 2020-02-14 | 2022-07-08 | 天津时空经纬测控技术有限公司 | Measuring method, system and storage medium |
| CN112053985B (en) * | 2020-07-03 | 2024-02-02 | 北京华卓精科科技股份有限公司 | Wafer alignment device and alignment method thereof |
| CN112710237B (en) * | 2021-01-29 | 2023-01-13 | 深圳中科飞测科技股份有限公司 | Alignment system and alignment method |
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| CN115831842A (en) * | 2022-11-16 | 2023-03-21 | 拓荆键科(海宁)半导体设备有限公司 | Method, device and system for aligning multiple wafers |
| CN115714103B (en) * | 2022-11-25 | 2023-11-24 | 拓荆键科(海宁)半导体设备有限公司 | Apparatus and method for wafer bond alignment and inspection |
| CN115939009A (en) * | 2023-01-30 | 2023-04-07 | 天津中科晶禾电子科技有限责任公司 | Optical alignment method |
| CN117116914B (en) * | 2023-10-24 | 2023-12-22 | 苏州芯慧联半导体科技有限公司 | Measurement mark and measurement method for wafer alignment |
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