CN110444492A - The recognition methods and wafer alignment method of alignment mark - Google Patents
The recognition methods and wafer alignment method of alignment mark Download PDFInfo
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- CN110444492A CN110444492A CN201910727326.7A CN201910727326A CN110444492A CN 110444492 A CN110444492 A CN 110444492A CN 201910727326 A CN201910727326 A CN 201910727326A CN 110444492 A CN110444492 A CN 110444492A
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- wafer
- film layer
- light source
- alignment mark
- thickness
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
Abstract
The present invention provides a kind of recognition methods of alignment mark and wafer alignment methods, comprising: provides wafer to be bonded, the wafer includes the film layer of substrate, the alignment mark on the substrate, the covering alignment mark；Alignment modules are provided, the alignment modules include various light sources, the corresponding wave band of every kind of light source；A kind of light source of corresponding wavelength is configured according to the thickness of the film layer, or adjusts the thickness of the film layer according to a kind of wavelength of selected light source, and the thickness of the film layer is made to be equal to the integral multiple of the corresponding optical source wavelength.The change in pattern that light causes alignment mark in the film interference between layers is avoided, improves the discrimination of alignment mark in bonding process, and then promote wafer alignment precision.
Description
Technical field
The invention belongs to semiconductor fields, and in particular to a kind of recognition methods and wafer alignment method of alignment mark.
Background technique
In integrated circuit technology, by the way that the identical or different chip of two or more functions is carried out three-dimensionally integrated mention
The performance of high chip, while the metal interconnection that can also be greatly shortened between functional chip reduce fever, power consumption and delay.
Wafer is used as three dimensional integrated circuits a key technology with being bonded for wafer, is provided with alignment in wafer to be bonded
Label, is covered with film layer, the material that the film layer is combined as bond strength on alignment mark.Execute wafer alignment
When, the light that light source issues passes through film layer and exposes to alignment mark, and to obtain the image of alignment mark, light is in the film interlayer
The pattern that the alignment mark that light intensity is constructive or destructive, and camera lens (optical lens of camera) is caused to obtain can be generated in the presence of interference becomes
Change, influence the identification of alignment mark in bonding process, and then influence bonding alignment precision, causes bonding machines that can not know when serious
Other alignment mark.
Summary of the invention
The object of the present invention is to provide a kind of recognition methods of alignment mark and wafer alignment methods, improve to fiducial mark
The discrimination of note, and then promote alignment precision.
To achieve the goals above, the present invention provides a kind of recognition methods of alignment mark, comprising:
There is provided wafer to be bonded, the wafer includes that substrate, the alignment mark on the substrate, covering are described right
The film layer of fiducial mark note；
Alignment modules are provided, the alignment modules include various light sources, the corresponding wave band of every kind of light source；
A kind of light source of corresponding wavelength, or the wave according to a kind of selected light source are configured according to the thickness of the film layer
The long thickness for adjusting the film layer makes the thickness of the film layer be equal to the integral multiple of the corresponding optical source wavelength.
Further, the wafer to be bonded include the first wafer and the second wafer, the first wafer include the first substrate,
The first film layer of the first alignment mark, covering first alignment mark on first substrate；Second wafer packet
Include the second film layer of the second substrate, the second alignment mark on second substrate, covering second alignment mark.
Further, the alignment modules include upper light source and lower light source, and the upper light source and lower light source include a variety of
Light source, the corresponding wave band of every kind of light source.
Further, the upper light source that corresponding wavelength is configured according to the thickness of the first film layer makes described first thin
The thickness of film layer is equal to the integral multiple of the corresponding upper optical source wavelength；It is configured according to the thickness of second film layer corresponding
The lower light source of wavelength makes the thickness of second film layer be equal to the integral multiple of the corresponding lower optical source wavelength.
Further, the thickness that the first film layer is adjusted according to the wavelength of the selected upper light source makes described
The thickness of one film layer is equal to the integral multiple of the corresponding upper optical source wavelength；
The thickness that second film layer is adjusted according to the wavelength of the selected lower light source, makes the secondth film layer
Thickness be equal to the corresponding lower optical source wavelength integral multiple.
Further, every kind of light source is monochromatic light.
Further, the wave-length coverage of various light sources is 380nm~4000nm.
Further, according to a kind of wavelength of selected light source, in the film layer growth phase of silicon wafer process process
The thickness for adjusting the film layer makes the thickness of the finally formed film layer be equal to the integer of the corresponding optical source wavelength
Times.
Further, according to a kind of wavelength of selected light source, chemically mechanical polishing is executed to the film layer of the wafer
Technique, the thickness of the film layer after making polishing are equal to the integral multiple of the corresponding optical source wavelength.
Further, the material of the film layer is silicon oxide or silicon nitride.
The present invention also provides a kind of wafer alignment methods, comprising:
Wafer to be bonded is provided, the wafer to be bonded includes the first wafer and the second wafer, and the first wafer includes
The first film layer of first alignment mark, covering first alignment mark；Second wafer includes the second alignment mark, covers
Cover the second film layer of second alignment mark；
Alignment modules are provided, the alignment modules include upper light source and lower light source, and the upper light source and lower light source include
Various light sources, the corresponding wave band of every kind of light source；The alignment modules further include the upper camera lens and lower camera lens of face setting,
It locks and moves synchronously after the upper camera lens and the lower alignment lens；
The upper light source of corresponding wavelength is configured according to the thickness of the first film layer, or according to the selected upper light source
Wavelength adjust the thickness of the first film layer, so that the thickness of the first film layer is equal to the corresponding upper optical source wavelength
Integral multiple；
The lower light source of corresponding wavelength is configured according to the thickness of second film layer, or according to the selected lower light source
Wavelength adjust the thickness of second film layer, so that the thickness of second film layer is equal to the corresponding lower optical source wavelength
Integral multiple；
First wafer is locked, and the mobile upper camera lens searches first alignment mark, upper camera lens moved after searching
It moves to locking right above the first alignment mark, the upper light source irradiation first wafer, the upper camera lens shooting described first
The pattern of alignment mark removes first wafer later；
Second alignment mark is searched in the lower camera lens, mobile second wafer is until second alignment mark position
In the surface of lower camera lens, second wafer is locked, the lower light source irradiates second wafer, and the lower camera lens shoots institute
State the pattern of the second alignment mark；
The pattern of pattern and second alignment mark to first alignment mark of shooting carries out image procossing, root
First wafer is controlled according to processing result and is moved to position with second wafer alignment, realizes first wafer and institute
State the alignment of the second wafer.
Further, the upper light source and the upper camera lens are arranged along same vertical axes, the lower light source and the lower mirror
Head is arranged along the vertical axes.
Compared with prior art, the present invention provides a kind of recognition methods of alignment mark and wafer alignment method, according to
The thickness of the film layer configures a kind of light source of corresponding wavelength, or described thin according to a kind of adjustment of the wavelength of selected light source
The thickness of film layer makes the thickness of the film layer be equal to the integral multiple of the corresponding optical source wavelength, avoids light described thin
Film interference between layers cause the change in pattern of alignment mark, improve the discrimination of alignment mark in bonding process, and then promote wafer
Alignment precision.
Detailed description of the invention
Fig. 1 is the recognition methods flow diagram of the alignment mark of the embodiment of the present invention；
Fig. 2 is the wafer to be bonded and alignment modules schematic diagram of the embodiment of the present invention；
Fig. 3 is the schematic diagram of the first alignment key pattern of acquisition of the embodiment of the present invention；
Fig. 4 is the schematic diagram of the second alignment key pattern of acquisition of the embodiment of the present invention；
The first wafer and the schematic diagram after the second wafer alignment that Fig. 5 is the embodiment of the present invention.
Wherein, appended drawing reference is as follows:
10- wafer；10 '-wafer chucks；101- substrate；102- alignment mark；103- film layer；The first wafer of 11-；
11 '-the first wafer chucks；The first substrate of 111-；The first alignment mark of 112-；113- the first film layer；The second wafer of 12-；
12 '-the second wafer chucks；The second substrate of 121-；The second alignment mark of 122-；The second film layer of 123-；20- light source；Light under 21-
Source；The upper light source of 22-；30- camera lens；Camera lens under 31-；The upper camera lens of 32-.
Specific embodiment
As described in background, in the presence of interference, to generate light intensity constructive or destructive in film interlayer for light, specifically, covering on wafer
When the thickness of the film layer of alignment mark is near the half of corresponding optical source wavelength, interference is obvious.Alignment provided by the invention
The recognition methods and wafer alignment method of label make film layer by the way that the thickness of film layer or the wavelength of light source is rationally arranged
Thickness and optical source wavelength matching, avoid interference with.
Recognition methods and wafer alignment side below in conjunction with the drawings and specific embodiments to alignment mark provided by the invention
Method is further described.According to following explanation, advantages and features of the invention will be become apparent from.It should be noted that attached drawing is equal
Using very simplified form and the non-accurate ratio of use, only to facilitate, lucidly aid in illustrating the embodiment of the present invention
Purpose.
Fig. 1 is the recognition methods flow diagram of the alignment mark of the embodiment of the present invention；Fig. 2 be the embodiment of the present invention to
Bonded wafer and alignment modules schematic diagram；As depicted in figs. 1 and 2, a kind of recognition methods of alignment mark, comprising:
Wafer 10 to be bonded is provided, the wafer 10 includes substrate 101, the alignment mark on the substrate 101
102, the film layer 103 of the alignment mark 102 is covered；
Alignment modules are provided, the alignment modules include various light sources, the corresponding wave band of every kind of light source 20；
A kind of light source of corresponding wavelength is configured according to the thickness h of the film layer 103, or according to a kind of selected light source
Wavelength adjust the thickness h of the film layer 103, so that the thickness h of the film layer 103 is equal to the corresponding optical source wavelength
Integral multiple.
The material of the film layer is, for example, silicon oxide or silicon nitride.
By making the thickness h of the film layer 103 be equal to the integral multiple of the corresponding optical source wavelength, light source hair is avoided
The light of injection is constructive or destructive in film interference between layers generation light intensity, improves the discrimination of alignment mark in bonding process,
And then promote bonding alignment precision.
As shown in figure 3, the wafer to be bonded includes the first wafer 11 and the second wafer 12, the first wafer 11 includes the
One substrate 111, the first alignment mark 112 on first substrate 111, covering first alignment mark 112 the
One film layer 113；Second wafer 12 include the second substrate 121, the second alignment mark 122 on second substrate 121,
Cover the second film layer 123 of second alignment mark 122.Specifically, second alignment mark 122 and first pair described
Fiducial mark note 112 can be metal pattern or medium layer pattern.Metal material in metal pattern is any one in aluminium, copper and tungsten
Kind.Dielectric layer material in medium layer pattern is, for example, silica and/or silicon nitride.Wafer to be bonded is, for example, image sensing
Device.First substrate 111 can be identical with structure with the second substrate 121, can also be different.In some embodiments, substrate can be with
For semiconductor substrate, any semiconductor material (Si, SiC, SiGe etc.) by being suitable for semiconductor device is made.Another
In a little embodiments, substrate may be the various compound substrates such as silicon-on-insulator (SOI), silicon germanium on insulator.This field skill
Art personnel understand that substrate is not any way limited, but can be selected according to practical application.It could be formed in substrate
Various device (being not limited to semiconductor device) component (not shown)s.Substrate can also be already formed with other layers or component,
Such as: gate structure, contact hole, dielectric layer, metal connecting line and through-hole etc..
Alignment modules include for monitoring the alignment mark on the first wafer and/or the second wafer and detecting alignment mark
Position optical device.Alignment modules include the optical lens on light source, camera and camera.For example, alignment modules can wrap
Include one or more infrared (IR) charge-coupled device (CCD) peepholes.In some embodiments, alignment modules can also include
For positioning any suitable optical device of bonding alignment mark, such as linear variable differential converter (LVDT), laser are dry
Interferometer or optical linear encoder and decoder etc..Camera can be monochromatic or colored, and unlimited is CDD or CMOS, unlimited
Resolution ratio, also unlimited is analog or digital.Camera front end (can have multiple cut equipped with the camera lens of visual field size is determined
It changes).
The light source includes upper light source 22 and lower light source 21, and the upper light source 22 and lower light source 21 include various light sources,
The corresponding wave band of every kind of light source.Every kind of light source is monochromatic light.The alignment modules include various light sources, Duo Zhongguang
The wave-length coverage in source is 380nm~4000nm.
When being the matured product being formed for the first wafer 11 and the second wafer 12, then corresponding the first film layer
113 and second film layer 123 thickness be it is determining constant, using configuration suitable wavelength light source deacclimatize 11 He of the first wafer
The thin film layer thickness of second wafer 12.
Specifically, configuring the upper light source 22 of corresponding wave band according to the thickness of the first film layer 113, make described first
The thickness of the first film layer 113 of wafer 11 is equal to the integral multiple of corresponding upper 22 wavelength of light source；It is thin according to described second
The thickness of film layer 123 configures the lower light source 21 of corresponding wavelength, makes the thickness etc. of the second film layer 123 of second wafer 12
In the integral multiple of corresponding lower 21 wavelength of light source.
Because light source wavelength band is limited, according to the light source of existing certain wavelength, adjust the first wafer 11 first is thin
The thickness of second film layer 123 of the thickness of film layer 113 and the second wafer 12, i.e., deacclimatize light by adjusting thin film layer thickness
Source.The thickness for adjusting film layer film layer growth phase can adjust during the silicon wafer process of the first wafer and the second wafer,
Which is suitable for wafer production process just its known film layer and the corresponding relationship of optical source wavelength.Adjust the thickness of film layer
It can terminate in the silicon wafer process of the first wafer and the second wafer, the original thin thicknesses of layers of wafer is it has been determined that passing through at this time
The thickness of mechanical polishing (CMP) adjustment film layer is learned, which is suitable for wafer production process and is not aware that film layer and light source
Wavelength needs corresponding situation.
Specifically, adjusting the thickness of the first film layer 113 according to the wavelength of the upper light source 22, make first crystalline substance
The thickness of the first film layer 113 of circle 11 is equal to the integral multiple of corresponding upper 22 wavelength of light source.According to the lower light source 21
Wavelength adjust the thickness of second film layer 123, be equal to the thickness of the second film layer of second wafer corresponding
The integral multiple of the lower optical source wavelength.According to a kind of wavelength of selected light source, in the film layer growth step of silicon wafer process process
The thickness of section adjustment film layer, makes the thickness of finally formed film layer be equal to the integral multiple of the corresponding optical source wavelength.Root
According to a kind of wavelength of selected light source, CMP process is executed to the film layer of the wafer, the film after making polishing
The thickness of layer is equal to the integral multiple of the corresponding optical source wavelength.
The embodiment of the present invention also provides a kind of wafer alignment method, comprising:
With continued reference to wafer to be bonded shown in Fig. 3, is provided, the wafer to be bonded includes the first wafer 11 and second
Wafer 12, the first wafer 11 include the first film layer 113 of the first alignment mark 112, covering first alignment mark 112；
Second wafer 12 includes the second film layer 123 of the second alignment mark 122, covering second alignment mark 122；About
It has been discussed in detail in the recognition methods of alignment mark before wafer to be bonded, details are not described herein.
Alignment modules are provided, the alignment modules include upper light source 22 and lower light source 21, the upper light source 22 and lower light source
21 include various light sources, the corresponding wave band of every kind of light source；The alignment modules further include the upper camera lens of face setting
32 and lower camera lens 31, upper camera lens 32 and about 31 lower camera lens are locked and are moved synchronously after being aligned.Specifically, 32 He of upper camera lens
Lower camera lens 31 is both configured to the optical lens of camera.The upper light source 22 and the upper camera lens 32 can be arranged along same vertical axes
And be located at the top of wafer to be bonded, the lower light source 21 and the lower camera lens 31 can also be arranged along same vertical axes and be located to
The lower section of bonded wafer.It is vertical where upper light source 22 and the upper camera lens 32 after upper camera lens 32 and about 31 lower camera lens are aligned
Vertical overlapping of axles where axis and lower light source 21 and the lower camera lens 31.
The upper light source 22 of corresponding wavelength is configured according to the thickness of the first film layer 113, or according to selected
The wavelength of upper light source 22 adjusts the thickness of the first film layer 113, is equal to the thickness of the first film layer 113 corresponding
The integral multiple of 22 wavelength of upper light source；
The lower light source 21 of corresponding wavelength is configured according to the thickness of second film layer 123, or according to selected
The wavelength of lower light source 21 adjusts the thickness of second film layer 123, is equal to the thickness of second film layer 123 corresponding
The integral multiple of 21 wavelength of lower light source；
The first wafer 11 is locked, the first wafer 11 is fixed on the first wafer chuck 11 ', and upper light source 22 irradiates described first
Wafer 11, camera lens 32 searches the first alignment mark 112 of the first wafer 11 in movement, and upper camera lens 32 is moved to the after searching
It is locked right above one alignment mark 112, the upper camera lens 32 shoots the pattern of first alignment mark 112, controls later
One wafer chuck 11 ' carries 11 transverse shifting of the first wafer, the first wafer 11 is removed, so that between upper camera lens 32 and lower camera lens 31
Have no occluder.
As shown in figure 4, the second alignment mark 122 of the second wafer 12 is searched in lower camera lens 31, mobile second wafer 12
Until the second alignment mark 122 of the second wafer 12 is located at the surface of lower camera lens 31, the second wafer 12 is locked, lower light source 21 shines
Second wafer 12 is penetrated, the lower camera lens 31 shoots the picture of second alignment mark 122.
As shown in Fig. 3~Fig. 5, to the pattern and second alignment mark 122 of first alignment mark 112 of shooting
Pattern carry out image procossing, first wafer 11 controlled according to processing result be moved to and be aligned with second wafer 12
The alignment of first wafer 11 and second wafer 12 is realized in position.Specifically, the upper camera lens 32 shoots described first
The pattern that the pattern of alignment mark 112 and the lower camera lens 31 shoot second alignment mark 122 is transferred to computer, calculates
Machine carries out image procossing, calculates the first accurate distance to be moved of wafer 11, the first wafer where the first wafer of control 11
First wafer 11 is moved to the position precisely aligned with the second wafer 12 by chuck 11 ', realizes first wafer 11 and second
The alignment of wafer 12.When first wafer 11 and the second wafer 12 are aligned, first alignment mark 112 and described second
Alignment mark 122 at least has a common symmetry axis.
In conclusion the present invention provides a kind of recognition methods of alignment mark and wafer alignment methods, according to described thin
The thickness of film layer configures a kind of light source of corresponding wavelength, or adjusts the film layer according to a kind of wavelength of selected light source
Thickness makes the thickness of the film layer be equal to the integral multiple of the corresponding optical source wavelength, avoids light in the film interlayer
Interference causes the change in pattern of alignment mark, improves the discrimination of alignment mark in bonding process, and then promotes wafer alignment essence
Degree.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, due to corresponding to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part illustration
.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (12)
1. a kind of recognition methods of alignment mark characterized by comprising
There is provided wafer to be bonded, the wafer includes that substrate, the alignment mark on the substrate, covering are described to fiducial mark
The film layer of note；
Alignment modules are provided, the alignment modules include various light sources, the corresponding wave band of every kind of light source；
A kind of light source of corresponding wavelength, or the wavelength tune according to a kind of selected light source are configured according to the thickness of the film layer
The thickness of the whole film layer makes the thickness of the film layer be equal to the integral multiple of the corresponding optical source wavelength.
2. the recognition methods of alignment mark as described in claim 1, which is characterized in that
The wafer to be bonded includes the first wafer and the second wafer, and the first wafer includes the first substrate, is located at described first
The first film layer of the first alignment mark, covering first alignment mark on substrate；Second wafer includes the second substrate, position
In the second film layer of the second alignment mark, covering second alignment mark on second substrate.
3. the recognition methods of alignment mark as claimed in claim 2, which is characterized in that the alignment modules include upper light source and
Lower light source, the upper light source and lower light source include various light sources, the corresponding wave band of every kind of light source.
4. the recognition methods of alignment mark as claimed in claim 3, which is characterized in that
The upper light source that corresponding wavelength is configured according to the thickness of the first film layer is equal to the thickness of the first film layer
The integral multiple of the corresponding upper optical source wavelength；The lower light source of corresponding wavelength is configured according to the thickness of second film layer,
The thickness of second film layer is set to be equal to the integral multiple of the corresponding lower optical source wavelength.
5. the recognition methods of alignment mark as claimed in claim 3, which is characterized in that
The thickness that the first film layer is adjusted according to the wavelength of the selected upper light source, makes the thickness of the first film layer
Equal to the integral multiple of the corresponding upper optical source wavelength；
The thickness that second film layer is adjusted according to the wavelength of the selected lower light source, makes the thickness of the secondth film layer
Degree is equal to the integral multiple of the corresponding lower optical source wavelength.
6. the recognition methods of the alignment mark as described in claim 1 to 5 any one, which is characterized in that every kind of light source
For monochromatic light.
7. the recognition methods of the alignment mark as described in claim 1 to 5 any one, which is characterized in that the wave of various light sources
Long range is 380nm~4000nm.
8. the recognition methods of the alignment mark as described in claim 1 to 5 any one, which is characterized in that according to selected one
The wavelength of kind light source, adjusts the thickness of the film layer in the film layer growth phase of silicon wafer process process, makes most end form
At the film layer thickness be equal to the corresponding optical source wavelength integral multiple.
9. the recognition methods of the alignment mark as described in claim 1 to 5 any one, which is characterized in that according to selected one
The wavelength of kind light source executes CMP process to the film layer of the wafer, the thickness etc. of the film layer after making polishing
In the integral multiple of the corresponding optical source wavelength.
10. the recognition methods of the alignment mark as described in claim 1 to 5 any one, which is characterized in that the film layer
Material is silicon oxide or silicon nitride.
11. a kind of wafer alignment method characterized by comprising
Wafer to be bonded is provided, the wafer to be bonded includes the first wafer and the second wafer, and the first wafer includes first
The first film layer of alignment mark, covering first alignment mark；Second wafer includes the second alignment mark, covering institute
State the second film layer of the second alignment mark；
Alignment modules are provided, the alignment modules include upper light source and lower light source, and the upper light source and lower light source include a variety of
Light source, the corresponding wave band of every kind of light source；The alignment modules further include the upper camera lens and lower camera lens of face setting, described
It locks and moves synchronously after upper camera lens and the lower alignment lens；
The upper light source of corresponding wavelength, or the wave according to the selected upper light source are configured according to the thickness of the first film layer
The long thickness for adjusting the first film layer makes the thickness of the first film layer be equal to the whole of the corresponding upper optical source wavelength
Several times；
The lower light source of corresponding wavelength, or the wave according to the selected lower light source are configured according to the thickness of second film layer
The long thickness for adjusting second film layer makes the thickness of second film layer be equal to the whole of the corresponding lower optical source wavelength
Several times；
First wafer is locked, and the mobile upper camera lens searches first alignment mark, upper camera lens is moved to after searching
Locking right above first alignment mark, the upper light source irradiate first wafer, upper camera lens shooting first alignment
The pattern of label removes first wafer later；
Second alignment mark is searched in the lower camera lens, mobile second wafer is under second alignment mark is located at
The surface of camera lens, locks second wafer, and the lower light source irradiates second wafer, the lower camera lens shooting described the
The pattern of two alignment marks；
The pattern of pattern and second alignment mark to first alignment mark of shooting carries out image procossing, according to place
Reason result controls first wafer and is moved to position with second wafer alignment, realizes first wafer and described the
The alignment of two wafers.
12. wafer alignment method as claimed in claim 11, which is characterized in that the upper light source and the upper camera lens are along same
Vertical axes setting, the lower light source and the lower camera lens are arranged along the vertical axes.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078090A (en) * | 2021-03-23 | 2021-07-06 | 长江存储科技有限责任公司 | Wafer preparation method, bonding device and bonding equipment |
| CN117253806A (en) * | 2023-11-20 | 2023-12-19 | 迈为技术(珠海)有限公司 | Lens concentricity calibration chip and preparation method thereof |
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