CN108598023A - 一种芯片加工方法 - Google Patents
一种芯片加工方法 Download PDFInfo
- Publication number
- CN108598023A CN108598023A CN201810467019.5A CN201810467019A CN108598023A CN 108598023 A CN108598023 A CN 108598023A CN 201810467019 A CN201810467019 A CN 201810467019A CN 108598023 A CN108598023 A CN 108598023A
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- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810467019.5A CN108598023B (zh) | 2018-05-16 | 2018-05-16 | 一种芯片加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810467019.5A CN108598023B (zh) | 2018-05-16 | 2018-05-16 | 一种芯片加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108598023A true CN108598023A (zh) | 2018-09-28 |
CN108598023B CN108598023B (zh) | 2020-11-13 |
Family
ID=63631348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201810467019.5A Active CN108598023B (zh) | 2018-05-16 | 2018-05-16 | 一种芯片加工方法 |
Country Status (1)
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CN (1) | CN108598023B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109860080A (zh) * | 2018-12-28 | 2019-06-07 | 浙江中晶新能源有限公司 | 一种硅片的定位输送装置 |
CN114793392A (zh) * | 2022-06-23 | 2022-07-26 | 太原市跃科科技有限公司 | 一种数控集成电路板震荡自清理蚀刻设备 |
CN115433918A (zh) * | 2022-08-26 | 2022-12-06 | 鑫德斯特电子设备 (安徽)有限公司 | 一种高洁净度硅片成膜设备及其成膜方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354615A (ja) * | 1998-06-04 | 1999-12-24 | Next:Kk | 半導体ウエハのチャック装置 |
KR20090007374U (ko) * | 2008-01-17 | 2009-07-22 | 주식회사 디엠에스 | 기판에 식각 영역을 만들기 위한 장치 |
CN101556911A (zh) * | 2008-04-07 | 2009-10-14 | 东京毅力科创株式会社 | 基板处理装置 |
CN104900569A (zh) * | 2014-03-03 | 2015-09-09 | 东京毅力科创株式会社 | 基板载置装置和基板处理装置 |
-
2018
- 2018-05-16 CN CN201810467019.5A patent/CN108598023B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354615A (ja) * | 1998-06-04 | 1999-12-24 | Next:Kk | 半導体ウエハのチャック装置 |
KR20090007374U (ko) * | 2008-01-17 | 2009-07-22 | 주식회사 디엠에스 | 기판에 식각 영역을 만들기 위한 장치 |
CN101556911A (zh) * | 2008-04-07 | 2009-10-14 | 东京毅力科创株式会社 | 基板处理装置 |
CN104900569A (zh) * | 2014-03-03 | 2015-09-09 | 东京毅力科创株式会社 | 基板载置装置和基板处理装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109860080A (zh) * | 2018-12-28 | 2019-06-07 | 浙江中晶新能源有限公司 | 一种硅片的定位输送装置 |
CN114793392A (zh) * | 2022-06-23 | 2022-07-26 | 太原市跃科科技有限公司 | 一种数控集成电路板震荡自清理蚀刻设备 |
CN114793392B (zh) * | 2022-06-23 | 2022-12-27 | 太原市跃科科技有限公司 | 一种数控集成电路板震荡自清理蚀刻设备 |
CN115433918A (zh) * | 2022-08-26 | 2022-12-06 | 鑫德斯特电子设备 (安徽)有限公司 | 一种高洁净度硅片成膜设备及其成膜方法 |
CN115433918B (zh) * | 2022-08-26 | 2023-11-10 | 鑫德斯特电子设备(安徽)有限公司 | 一种高洁净度硅片成膜设备及其成膜方法 |
Also Published As
Publication number | Publication date |
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CN108598023B (zh) | 2020-11-13 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Shi Jinyuan Inventor after: Wang Yujie Inventor after: Zhang Yunhe Inventor before: Wang Yujie Inventor before: Zhang Yunhe |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201022 Address after: 518000 Factory Building of Xinhao Second Industrial Zone, Qiaotou Community, Fuhai Street, Baoan District, Shenzhen City, Guangdong Province Applicant after: SHENZHEN XINZHANTONG ELECTRONICS Co.,Ltd. Address before: 310014 Energy Education Institute, Zhejiang University of Technology, 18 Chao Wang Road, Xiacheng District, Hangzhou, Zhejiang Applicant before: Wang Yujie |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518000 The whole building on the first floor of the factory building of Xinhao Second Industrial Zone, Xintian Community, Fuhai Street, Baoan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Xinzhantong Electronics Co., Ltd. Address before: 518000 the whole building on the first floor of building B1 in Xinhao second industrial zone, Qiaotou community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN XINZHANTONG ELECTRONICS CO.,LTD. |