CN108586467B - 一类含氮芳香性稠环化合物及其制备方法和应用 - Google Patents
一类含氮芳香性稠环化合物及其制备方法和应用 Download PDFInfo
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- CN108586467B CN108586467B CN201810634194.9A CN201810634194A CN108586467B CN 108586467 B CN108586467 B CN 108586467B CN 201810634194 A CN201810634194 A CN 201810634194A CN 108586467 B CN108586467 B CN 108586467B
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- nitrogen
- fused ring
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/12—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains three hetero rings
- C07D487/16—Peri-condensed systems
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
- C09K9/02—Organic tenebrescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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Abstract
Description
技术领域
本发明涉及稠环化合物领域,尤其涉及一类含氮芳香性稠环化合物。
背景技术
稠环分子具有独特的电子结构,在光电、生命等领域有着广泛的应用。其中,满足4n+2休克尔规则的稠环芳香化合物是一类重要的稠环化合物。在众多的稠环芳香化合物中,以邻苯二甲腈及其衍生物作为前体的酞菁化合物受到了广泛的应用。[参见a)J.Jiang,D.K.P.Ng,Acc.Chem.Res.2009,42,79-88;b)M.Calvete,G.Y.Yang,M.Hanack,Syn.Met.2004,141,23-243;c)W.Zheng,B.B.Wang,J.C.Lai,C.Z.Wan,X.R.Lu,C.H.Li,X.Z.You,J.Mater.Chem.C,2015,3,3072–3080;d)W.Liu,H.Pan,Z.Wang,K.Wang,D.Qi,J.Jiang,Chem.Commun.2017,53,93765–3768;e)G.Yang,Y.L.Wang,J.J.Xu,H.W.Lei,C.Chen,H.Q.Shan,X.Y.Liu,Z.X.Xu,G.J.Fang,Nano Energy,2017,31,322-330.]酞菁的衍生物大多是外侧的取代基不同或是中心的金属不同,如果对酞菁环内部进行修饰,可以对此类化合物的性质产生显著的影响,从而进一步拓展其使用范围。目前常见的修饰内部环的方法有1)扩环形成“超酞菁”;2)缩环形成“亚酞菁”;3)替换异吲哚结构。然而这些方法都有各自的缺陷:1)超酞菁只能形成中心金属为铀的结构,不利于此类化合物的拓展;2)亚酞菁中心原子只能是硼,结构非平面性,限制了应用;3)取代异吲哚环合成难度大,分离难,难以大规模合成。因此,利用高效的制备方法,大规模合成新型的环修饰化合物对于拓展酞菁类衍生物的研究与应用范围具有广泛而深远的意义。
发明内容
本发明具体技术方案如下:
鉴于上述现有的问题,本发明的目的在于提供一类新型的稠环芳香化合物及其制备方法,该类化合物具有可高效制备、溶解性出色的特点,解决酞菁类化合物及环修饰化合物由于制备难度大或溶解性差等问题导致应用潜力小的问题。
本发明的技术方案如下:
本发明提供了首次合成了一种新型含氮稠环芳香化合物,具有式(I)的母核结构,将该化合物命名为“酞荭”,含有该结构的物质命名为“酞荭化合物”。
一类含氮稠环芳香化合物,具有如下结构:
其中
R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C18的烷基、C1-C18的烷氧基、C1-C18的烷巯基、C1-C18的烷氨基、芳氧基、芳巯基、芳氨基或者咔唑基;
R12代表-H、氰基、甲基、胺甲基、脒基、取代或非取代的嘧啶基;
R13代表-H、氰基、甲基或胺甲基。
优选的,所述的含氮稠环芳香化合物,
R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C6的烷基、C1-C6的烷氧基、C1-C6的烷巯基、C1-C6的烷氨基、苯氧基、苯巯基、苯氨基或咔唑基;R12代表-H、氰基、甲基、胺甲基、甲脒基、嘧啶基或被一个或多个C1-C6烷基取代的嘧啶基;
R13代表-H、氰基、甲基或胺甲基。
进一步优选的,所述的含氮稠环芳香化合物,
R12和R13代表氰基,R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C6的烷基、C1-C6的烷氧基、C1-C6的烷巯基、C1-C6的烷氨基、苯氧基、苯巯基、苯氨基或咔唑基;
或者,R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C6的烷基、C1-C6的烷氧基、C1-C6的烷巯基、C1-C6的烷氨基、苯氧基、苯巯基、苯氨基或咔唑基;R12代表-H、氰基、甲基、胺甲基、甲脒基、嘧啶基或被一个或多个C1-C6烷基取代的嘧啶基,R13代表H、甲基或胺甲基。
更进一步优选的,所述的含氮稠环芳香化合物,
本发明所述的含氮稠环芳香化合物结构中R13代表甲脒基时,可与有机酸形成酸式盐。
本发明的另一目的在于提供本发明所述含氮稠环芳香化合物在制备p型半导体材料中的应用,所述p型半导体材料可用于制备分子导体、分子电子元器件、电致变色、光电转换材料、OLED材料。
本发明的另一目的在于提供本发明所述含氮稠环芳香化合物的制备方法,包括如下步骤:
(1)将一种或几种取代或非取代邻苯二腈溶解于高极性溶剂,在常温或更低温度下,滴加到含有强有机碱的高极性溶剂中得到化合物1,所述取代或非取代邻苯二腈结构如反应式中所示;
其中R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C18的烷基、C1-C18的烷氧基、C1-C18的烷巯基、C1-C18的烷氨基、芳氧基、芳巯基、芳氨基或者咔唑基;
(2)化合物1滴加到的质子型溶剂中反应得到固体,所述质子型溶剂选自水、C1-C6的低级醇中的一种或几种(优选水,甲醇或乙醇中的一种或几种),将该固体150~300℃无溶剂加热,分离得到化合物2;
或者,将该固体在40℃~回流温度在含有有机酸的的有机溶剂中加热,得到化合物3,其中A-代表酸根,所述有机溶剂选自四氢呋喃、甲醇、乙醇、苯、甲苯中的一种或几种,所述有机酸为本领域常规使用的有机酸如一元或多元脂肪酸,或芳香酸、磺酸(-SO3H)、亚磺酸(RSOOH)、硫羧酸(RCOSH),如甲酸、乙酸、苯甲酸、三氟乙酸、对甲苯磺酸、酒石酸、草酸等。
上述制备方法,所述强有机碱选自叔丁醇钾,叔丁醇钠,叔丁醇锂,二异丙基氨基锂,丁基锂,叔丁基锂中的一种或几种;所述高极性溶剂选自N,N-二甲基甲酰胺,N,N-二乙基乙酰胺,甲酰胺,二甲亚砜中的一种或几种。
本发明还公开了一种含氮稠环芳香化合物的制备方法,将上述方法制得的化合物3加入碱制得化合物4;或者进一步将化合物4与β-二酮化合物R14COCHR15COR16回流反应制得化合物5,
所述R14、R15、R16相同或者不同,代表H、C1-C18的烷基、三氟甲基、噻吩、呋喃,优选H和C1-C6的烷基。
化合物2、3、4、5的12位和13位为氰基,采用不同的加氢条件可以得到不同的还原产物:
(1)以铑(I)催化剂催化还原,如在[RhCl(cod)]2,亚磷酸酯配体,三烷基硅烷,非质子型溶剂存在下,在氮气保护下加热回流,可以将12位和13位的氰基还原为H。
(2)以金属钯为催化剂,在氢气条件下加压,在非质子型溶剂中加热反应,可以将12位和13位的氰基还原为甲基。
(3)以氯化镍为催化剂,硼氢化钠在质子型溶剂中加热,可以将12位和13位的氰基还原为胺甲基。
一个具体的实施例,在反应容器中加入含有强有机碱的高极性溶剂,取代或非取代的邻苯二腈溶解于高极性溶剂,常温或更低温度下,将一种或几种取代或非取代的邻苯二腈溶液滴加到含有强有机碱的高极性溶剂,点板检测直到取代或非取代的邻苯二腈完全耗尽,得到的深色溶液滴加到足量的质子型溶剂中,静置过夜,过滤,得到深色固体。将该固体在不同的条件下加热,分离得到深色化合物,为酞荭化合物。可进一步将该化合物中和、扩环。可进一步将上述化合物加氢还原,得到不同的具有相同母核的酞荭化合物。
优选的,上述制备方法还进一步包括对产物的分离纯化步骤,如柱层析和/或重结晶等。研究表明本发明所述化合物在二氯甲烷中的吸收(Abs.)与发射(Em.)光谱。具有相似的光谱行为。说明酞荭化合物及其衍生物具有相似的物化性质。
本发明将酞荭化合物在丙酮溶液中挥发所得到的晶体,采用十八烷基三氯硅烷(OTS)作为修饰层,制备底栅底接触的OFET器件,测出其空穴迁移率为3×10-3cm2/V,呈现出典型的p型半导体特性。提示本发明所述化合物可作为p型半导体材料用于分子导体材料、分子电子元器件材料、电致变色材料、光电转换材料或OLED材料领域。
本发明的有益成果
本发明涉及的化合物及合成方法与现有技术相比,其显著优点是:1)利用邻苯二甲腈及衍生物这一类物质作为前体,而邻苯二甲腈也是酞菁化合物的前体,因此酞荭化合物可以与酞菁化合物共享前体;2)酞荭化合物具有好的平面性,有利于在光电器件中的应用;3)制备方法便捷,产率高;4)芳香性及光谱形状与酞菁相似,但溶解性更好,相比酞菁更易加工。
附图说明
图1为酞荭与酞菁的结构及光谱;
图2为化合物Pr-1与Pr-3溶液的吸收及发射光谱;
图3为化合物Pr-5与Pr-6溶液的吸收及发射光谱;
图4为化合物Pr-7与Pr-9溶液的吸收光谱;
图5为化合物Pr-2、Pr-8、Pr-10和Pr-11溶液的吸收光谱;
图6为化合物Pr-3的单晶结构图。
具体实施方式
以下通过实施例说明本发明的具体步骤,但不受实施例限制。
在本发明中使用的术语,除非另有说明,一般具有本领域普通技术人员通常理解的含义。
下面结合具体实施例并参照数据进一步详细描述本发明,应理解,这些实施例只是为了举例说明本发明,而非以任何方式限制本发明的范围。
在以下实施例中,未详细描述的各种过程和方法是本领域中公知的常规方法。
实施例1.化合物Pr-1的合成:
在100ml的单口瓶中,加入5.6g叔丁醇钾溶与25ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有6.4g邻苯二甲腈的N,N-二甲基甲酰胺溶液(25ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得化合物A。将3.9g化合物A放在坩埚中,氮气保护下加热至230℃,反应3小时,冷却至室温得深色固体,用100-140目硅胶装柱分离,洗脱剂为二氯甲烷,蒸干溶剂后然后用二氯甲烷/正己烷重结晶得到目标化合物Pr-1。Pr-1为绿色固体(2.85g,产率47%),溶液(溶剂为二氯甲烷)为红色。
1H NMR(500MHz,CDCl3)(ppm):8.98(1H,d).8.86(1H,m),8.54(1H,m),8.30(1H,d).7.86~8.00(5H,m),7.63~7.69(2H,m).MS(ESI):m/z 392.5[M+Na]+.UV-Vis(溶剂为二氯甲烷)λmax(nm):602,557(Q band),408(B band)。
实施例2.化合物Pr-2的合成:
在100ml的单口瓶中,加入5.6g叔丁醇钾溶与25ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有6.4g邻苯二甲腈的N,N-二甲基甲酰胺溶液(25ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得化合物A。将386mg化合物A溶于20ml乙醇与20ml乙酸组成的混合溶液中,加热回流24小时,冷却至室温,旋转蒸发除去溶剂,残留物溶于水中,过滤,取滤液。将滤液蒸干得绿色固体,利用乙醇/二氯甲烷重结晶,得到目标化合物Pr-2。Pr-2为绿色固体(196mg,产率44%),溶液(溶剂为乙醇)为红色。
1H NMR(500MHz,d-DMSO)(ppm):11.32(4H,brs),8.95(1H,d),8.79(1H,d),8.74(1H,d),8.65(1H,d),8.16(1H,d),8.07~8.12(2H,m),7.94(1H,m),7.74~7.79(2H,m),7.69(1H,m),1.80(3H,s,-CH3of acetate)MS(ESI):m/z 387.4[M]+.UV-Vis(溶剂为乙醇)λmax(nm):602,556(Q band),401(B band)。
实施例3.化合物Pr-3的合成:
在5ml的单口瓶中,加入369mg化合物Pr-1,25mg的[RhCl(cod)]2,20.8mg的亚磷酸三异丙基酯,632mg三异丙基硅烷,以及1ml乙基环己烷,在氮气保护下加热回流15小时。冷却至室温,旋干溶剂,用100-140目硅胶装柱分离,洗脱剂为二氯甲烷,蒸干溶剂后然后用二氯甲烷/正己烷重结晶得到目标化合物Pr-3。Pr-3为红色固体(129mg,产率40%),溶液(溶剂为二氯甲烷)为红色。
1H NMR(500MHz,CDCl3)(ppm):8.92(2H,d),8.76(2H,d),8.23(2H,d),7.85(2H,m),7.64(2H,m),7.52~7.57(3H,m).MS(ESI):m/z 320.5[M+H]+.UV-Vis(溶剂为二氯甲烷)(nm):597,552(Q band),398(B band).
实施例4.化合物Pr-4的合成:
将447mg化合物Pr-2溶于100ml水中,逐滴加入20ml浓度为1M的NaOH溶液,有绿色固体析出,过滤后水洗三次,干燥后得到目标化合物Pr-4。Pr-4为绿色固体(330mg,产率85%),溶液(溶剂为二氯甲烷)为红色。
1H NMR(500MHz,CDCl3)(ppm):8.90(1H,d),8.80(1H,d).8.56(1H,m),8.34(1H,d),7.89~8.01(5H,m),7.67~7.72(2H,m),4.58(1H,s),2.76(2H,s).MS(ESI):m/z 387.4[M+H]+.UV-Vis(溶剂为二氯甲烷)λmax(nm):598,553(Q band),399(B band).
实施例5.化合物Pr-5的合成:
在25ml的单口瓶中,加入386mg化合物Pr-4,300mg乙酰丙酮,10ml吡啶,在氮气保护下加热回流24小时。冷却至室温,旋干溶剂,用100-140目硅胶装柱分离,洗脱剂为二氯甲烷,蒸干溶剂后然后用二氯甲烷/正己烷重结晶得到目标化合物Pr-5。Pr-5为紫色固体(303mg,产率67%),溶液(溶剂为二氯甲烷)为红色。
1H NMR(500MHz,CDCl3)(ppm):8.62(1H,d),8.45(2H,m),8.23(1H,d),7.95(1H,d),7.89(1H,m),7.76~7.84(2H,m),7.61~7.71(2H,m),7.55(1H,m),6.90(1H,s),2.23(6H,s).MS(ESI):m/z 451.5[M+H]+.UV-Vis(溶剂为二氯甲烷)λmax(nm):601,556(Q band),396(B band).
实施例6.化合物Pr-6的合成:
在5ml的单口瓶中,加入450mg化合物Pr-5,15mg的[RhCl(cod)]2,10mg的亚磷酸三异丙基酯,316mg三异丙基硅烷,以及1ml乙基环己烷,在氮气保护下加热回流15小时。冷却至室温,旋干溶剂,用100-140目硅胶装柱分离,洗脱剂为二氯甲烷,蒸干溶剂后然后用二氯甲烷/正己烷重结晶得到目标化合物Pr-6。Pr-6为红色固体(160mg,产率38%),溶液(溶剂为二氯甲烷)为红色。
1H NMR(500MHz,CDCl3)(ppm):8.44~8.49(2H,m),8.25(2H,d),8.03(1H,d),7.83(2H,m),7.61~7.70(3H,m),7.48(1H,m),6.83(1H,s),2.15(6H,s).MS(ESI):m/z426.4[M+H]+.UV-Vis(溶剂为二氯甲烷)λmax(nm):591,548(Q band),389(B band).
实施例7.化合物Pr-7的合成:
在100ml的单口瓶中,加入5.6g叔丁醇钾溶与25ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有7.9g的3-甲氧基邻苯二甲腈的N,N-二甲基甲酰胺溶液(25ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得化合物B。将4.8g化合物B放在坩埚中,氮气保护下加热至230℃,反应3小时,冷却至室温得深色固体,用100-140目硅胶装柱分离,洗脱剂为二氯甲烷,蒸干溶剂后然后用二氯甲烷/正己烷重结晶得到目标化合物Pr-7。Pr-7为绿色固体(2.65g,产率58%),溶液(溶剂为二氯甲烷)为红色。
MS(ESI):m/z 482.2[M+Na]+.UV-Vis(溶剂为二氯甲烷)λmax(nm):585,542(Qband),412(B band)。
实施例8.化合物Pr-8的合成:
在100ml的单口瓶中,加入5.6g叔丁醇钾溶与25ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有7.9g的3-甲氧基邻苯二甲腈的N,N-二甲基甲酰胺溶液(25ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得化合物B。将476mg化合物B溶于20ml乙醇与20ml乙酸组成的混合溶液中,加热回流24小时,冷却至室温,旋转蒸发除去溶剂,残留物溶于水中,过滤,取滤液。将滤液蒸干得绿色固体,利用乙醇/二氯甲烷重结晶,得到目标化合物Pr-8。Pr-8为绿色固体(210mg,产率40%),溶液(溶剂为乙醇)为红色。
MS(ESI):m/z 477.2[M]+.UV-Vis(溶剂为乙醇)λmax(nm):581,539(Q band),404(B band)。
实施例9.化合物Pr-9的合成:
在100ml的单口瓶中,加入5.6g叔丁醇钾溶与25ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有10.8g的3-叔丁巯基邻苯二甲腈的N,N-二甲基甲酰胺溶液(25ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得化合物C。将6.5g化合物C放在坩埚中,氮气保护下加热至230℃,反应3小时,冷却至室温得深色固体,用100-140目硅胶装柱分离,洗脱剂为二氯甲烷,蒸干溶剂后然后用二氯甲烷/正己烷重结晶得到目标化合物Pr-9。Pr-9为绿色固体(2.93g,产率46%),溶液(溶剂为二氯甲烷)为红色。
MS(ESI):m/z 1289.1[M+Na]+.UV-Vis(溶剂为二氯甲烷)λmax(nm):611,564(Qband),419(B band)。
实施例10.化合物Pr-10的合成:
在100ml的单口瓶中,加入5.6g叔丁醇钾溶与25ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有10.8g的3-叔丁巯基邻苯二甲腈的N,N-二甲基甲酰胺溶液(25ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得化合物B。将650mg化合物B溶于20ml乙醇与20ml乙酸组成的混合溶液中,加热回流24小时,冷却至室温,旋转蒸发除去溶剂,残留物溶于水中,过滤,取滤液。将滤液蒸干得绿色固体,利用乙醇/二氯甲烷重结晶,得到目标化合物Pr-8。Pr-8为绿色固体(312mg,产率44%),溶液(溶剂为乙醇)为红色。
MS(ESI):m/z 651.4[M]+.UV-Vis(溶剂为乙醇)λmax(nm):608,563(Q band),404(B band)。
实施例11.化合物Pr-11的合成:
在100ml的单口瓶中,加入0.56g叔丁醇钾溶于5ml的N,N-二甲基甲酰胺中,在氮气保护,冰浴条件下,逐滴加入溶有2.3g的4,5-二咔唑邻苯二甲腈的N,N-二甲基甲酰胺溶液(5ml)。反应1小时后,将反应液滴加到500g的冰中,静置过夜,过滤,用水冲洗滤渣至洗液无色,将固体真空干燥,得红色固体。将1.38g红色固体溶于20ml乙醇与20ml乙酸组成的混合溶液中,加热回流24小时,冷却至室温,旋转蒸发除去溶剂,残留物溶于水中,过滤,取滤液。将滤液蒸干得绿色固体,利用乙醇/二氯甲烷重结晶,得到目标化合物Pr-11。Pr-11为绿色固体(778mg,产率54%),溶液(溶剂为乙醇)为绿色。
MS(ESI):m/z 1378.7[M]+.UV-Vis(溶剂为乙醇)λmax(nm):617,570(Q band),410(B band).
实施例12.化合物Pr-1~Pr-11在不同溶剂中的溶解性能:
分别考察本发明化合物Pr-1~Pr-11在正己烷、甲苯、二氯甲烷、四氢呋喃、乙酸乙酯、乙醇、二甲亚砜、甲醇、水中的溶解性能,结果如表1所示。
表1
上表单位为“毫克/10毫升溶剂”;
结果表明本发明所述化合物相对于酞菁在各种常规溶剂中具有优越的溶解性。
实施例13
考察化合物Pr-1~Pr-11在二氯甲烷中的吸收(Abs.)与发射(Em.)光谱。结果如图2-图5所示,结果表明化合物Pr-1、Pr-2以及Pr-4~Pr-11与其母核结构Pr-3有相似的光谱行为。说明酞荭化合物及其衍生物具有相似的物化性质。
实施例14基于本发明所述化合物的有机场效应晶体管(OFET)
以化合物Pr-3为例,将其在丙酮溶液中挥发所得到的晶体,采用十八烷基三氯硅烷(OTS)作为修饰层,制备底栅底接触的OFET器件,测出其空穴迁移率为3×10-3cm2/V,呈现出典型的p型半导体特性。提示本发明所述化合物Pr-1~Pr-11可作为p型半导体材料用于分子导体材料、分子电子元器件材料、电致变色材料、光电转换材料或OLED材料领域。
应当理解的是,本发明的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本发明所附权利要求的保护范围。
Claims (12)
2.如权利要求1所述的含氮稠环芳香化合物,其特征在于,
R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C6的烷基、C1-C6的烷氧基、C1-C6的烷巯基、C1-C6的烷氨基、苯氧基、苯巯基、苯氨基或咔唑基;R12代表-H、氰基、甲基、胺甲基、甲脒基、嘧啶基或被一个或多个C1-C6烷基取代的嘧啶基;
R13代表-H、氰基、甲基或胺甲基。
3.如权利要求2所述的含氮稠环芳香化合物,其特征在于具有如下结构:
R12和R13代表氰基,R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C6的烷基、C1-C6的烷氧基、C1-C6的烷巯基、C1-C6的烷氨基、苯氧基、苯巯基、苯氨基或咔唑基;
或者,R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C6的烷基、C1-C6的烷氧基、C1-C6的烷巯基、C1-C6的烷氨基、苯氧基、苯巯基、苯氨基或咔唑基;R12代表-H、氰基、甲基、胺甲基、甲脒基、嘧啶基或被一个或多个C1-C6烷基取代的嘧啶基,R13代表H、甲基或胺甲基。
6.一种含氮稠环芳香化合物,其特征在于如1-5任一项所述的含氮稠环芳香化合物结构中R12代表甲脒基时,与有机酸形成的酸式盐。
7.如权利要求1-6任一项所述含氮稠环芳香化合物在制备p型半导体材料中的应用。
8.如权利要求7所述的应用,其特征在于所述p型半导体材料可用于制备分子导体材料、分子电子元器件材料、电致变色材料、光电转换材料或OLED材料。
9.一种含氮稠环芳香化合物的制备方法,包括如下步骤:
(1)将一种或几种取代或非取代邻苯二腈溶解于高极性溶剂,在常温或更低温度下,滴加到含有强有机碱的高极性溶剂中得到化合物1,所述取代或非取代邻苯二腈结构如反应式中所示;
其中R1-R11相同或不同,代表-H,-F,-Cl,-Br,-I、羟基、巯基、氨基、氰基、C1-C18的烷基、C1-C18的烷氧基、C1-C18的烷巯基、C1-C18的烷氨基、芳氧基、芳巯基、芳氨基或者咔唑基;
(2)化合物1滴加到的质子型溶剂中反应得到固体,所述质子型溶剂选自水、C1-C6的低级醇中的一种或几种,将该固体150~300℃无溶剂加热,分离得到化合物2;
或者,将该固体在40℃~回流温度在含有有机酸的有机溶剂中加热,得到化合物3,其中A-代表酸根,所述有机溶剂选自四氢呋喃、甲醇、乙醇、苯、甲苯中的一种或几种,
10.如权利要求9所述的制备方法,其特征在于所述强有机碱选自叔丁醇钾,叔丁醇钠,叔丁醇锂,二异丙基氨基锂,丁基锂,叔丁基锂中的一种或几种;
所述高极性溶剂选自N,N-二甲基甲酰胺,N,N-二乙基乙酰胺,甲酰胺,二甲亚砜中的一种或几种。
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