CN108565303A - 薄膜太阳能电池组件 - Google Patents

薄膜太阳能电池组件 Download PDF

Info

Publication number
CN108565303A
CN108565303A CN201810102076.3A CN201810102076A CN108565303A CN 108565303 A CN108565303 A CN 108565303A CN 201810102076 A CN201810102076 A CN 201810102076A CN 108565303 A CN108565303 A CN 108565303A
Authority
CN
China
Prior art keywords
groove
electrode layer
layer
solar cell
cell assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810102076.3A
Other languages
English (en)
Inventor
赵树利
郭逦达
李新连
陈涛
杨立红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Apollo Ding Rong Solar Technology Co Ltd
Original Assignee
Beijing Apollo Ding Rong Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Apollo Ding Rong Solar Technology Co Ltd filed Critical Beijing Apollo Ding Rong Solar Technology Co Ltd
Priority to CN201810102076.3A priority Critical patent/CN108565303A/zh
Priority to PCT/CN2018/090710 priority patent/WO2019148733A1/zh
Priority to US16/089,874 priority patent/US20200303572A1/en
Priority to KR1020187030617A priority patent/KR20190094288A/ko
Priority to EP18769577.0A priority patent/EP3748696A1/en
Priority to JP2018555611A priority patent/JP2020508559A/ja
Publication of CN108565303A publication Critical patent/CN108565303A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明提供一种薄膜太阳能电池组件，其包括一基底及设置于所述基底上的多个串联且相互间隔设置的电池单元，相邻的所述电池单元的背电极层之间设有贯穿所述背电极层的第一凹槽，所述第一凹槽内填充有绝缘部。由于在第一刻划所形成的第一凹槽内设置绝缘部，从而可使第二刻划的位置与第一刻划的位置的间距减小，因此死区的面积可大大减少，所述薄膜太阳能电池组件的转换效率大大提高。

Description

薄膜太阳能电池组件
技术领域
本发明涉及一种薄膜太阳能电池组件。
背景技术
太阳能薄膜电池又称为“太阳能芯片”或“光电池”，是一种利用太阳光直接发电的光电半导体薄膜。
薄膜太阳能电池组件的制备过程具体为：利用至少3次激光/机械刻划工艺 (根据刻划的时间顺序，命名为P1刻划、P2刻划、P3刻划)，将整片薄膜太阳能电池划分成多个电池单元，并且实现电池单元之间的串联或并联。该工艺设计可保证薄膜太阳能电池组件以合适的电压和电流方式进行输出，实现薄膜太阳能电池组件的实际应用。
P1、P2、及P3刻划工艺虽然可形成多个串联/并联的电池单元，但会在薄膜太阳能电池组件上产生不能进行光电转换的区域(P1～P3刻划线的位置和 P1～P3刻划线的间隔区域)，即薄膜太阳能电池组件中所谓的“死区”(如附图1 所示)。
而P1、P2、P3刻划过程是通过激光或者机械刻划实现的，受限于现有刻划工艺技术水平和成本控制因素，P1～P3刻划线的宽度和精度难以得到显著改善，造成死区面积无法得到有效减少，最终影响薄膜太阳能电池组件的光转换效率。
发明内容
针对上述问题，本发明提供一种薄膜太阳能电池组件，该薄膜太阳能电池组件中第一刻划线(即P1刻划)所在的位置设置绝缘部，即多个电池单元中的背电极层通过绝缘部而间隔设置，从而可在绝缘部的部分表面上进行第二刻划 (即P2刻划)，进而可减少死区的面积。
本发明提供一种薄膜太阳能电池组件，其包括一基底及设置于所述基底上的多个串联且相互间隔设置的电池单元，每一个所述电池单元包括依次设置的背电极层、光吸收层、缓冲层、及上电极层，其中，相邻的所述电池单元的背电极层之间设有贯穿所述背电极层的第一凹槽，所述第一凹槽内填充有绝缘部，以使相邻的电池单元的背电极层之间绝缘间隔，每一个所述电池单元开设有贯穿所述光吸收层及所述缓冲层的第二凹槽，所述上电极层覆盖所述缓冲层并延伸至所述第二凹槽而接触相邻的所述电池单元的背电极层，进而将相邻的所述电池单元串联，相邻的所述电池单元之间开设有第三凹槽，所述第三凹槽将相邻的所述电池单元的上电极层绝缘间隔。
所述薄膜太阳能电池组件具有以下优点：
由于在第一刻划所形成的第一凹槽内设置绝缘部，即多个电池单元中的背电极层通过绝缘部而间隔设置，从而可在绝缘部的部分表面的上方进行第二刻划。第二刻划形成第二凹槽，所述绝缘部可通过所述第二凹槽而部分暴露，第二刻划的位置与第一刻划的位置的间距减小，因此，使得死区的面积大大减少，从而所述薄膜太阳能电池组件的转换效率大大提高。
该制备方法中，通过掩模在第一凹槽内形成绝缘部，而可在所述绝缘部的部分表面进行第二刻划。该方法具有工艺简单、高效可控的优点。
附图说明
图1为本发明所述薄膜太阳能电池组件的结构示意图；
图2为本发明所述薄膜太阳能电池组件的制备工艺的示意图。
图中，100表示第一电池单元；200表示第二电池单元；10表示基底；20 表示背电极层；21表示第一背电极层；22表示第二背电极层；30表示光吸收层； 31表示第一光吸收层；32表示第二光吸收层；40表示缓冲层；41表示第一缓冲层；42表示第二缓冲层；50表示上电极层；51表示第一上电极层；52表示第二上电极层；60表示第一凹槽；70表示绝缘部；80表示第二凹槽；90表示第三凹槽。
具体实施方式
下面将对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施方式，都属于本发明保护的范围。
请参阅图1，本发明提供一种薄膜太阳能电池组件。所述薄膜太阳能电池组件包括一基底10及设置于所述基底10上的多个串联且相互间隔设置的电池单元。每一个所述电池单元包括依次设置的背电极层20、光吸收层30、缓冲层40、及上电极层50。相邻的所述电池单元的背电极层20之间设有贯穿所述背电极层 20的第一凹槽60。所述第一凹槽60内填充有绝缘部70，以使相邻的电池单元的背电极层20之间绝缘间隔。每一个所述电池单元开设有贯穿所述光吸收层30 及所述缓冲层40的第二凹槽80。所述上电极层50覆盖所述缓冲层40并延伸至所述第二凹槽80而接触相邻的所述电池单元的背电极层20，进而将相邻的所述电池单元串联。相邻的所述电池单元之间开设有第三凹槽90，所述第三凹槽90 将相邻的所述电池单元的上电极层50绝缘间隔。
如图1所示，以相邻的两个第一电池单元100及第二电池单元200为例来对所述薄膜太阳能电池组件的结构进行具体说明。
所述第一电池单元100与第二电池单元200相邻且结构相同。即，第一电池单元100与第二电池单元200实际为结构一致的重复的电池单元，只是为了更好的说明相邻的两个电池单元内各元件的关系而特命名不同。所述第一电池单元100包括依次设置的第一背电极层21、第一光吸收层31、第一缓冲层41、及第一上电极层51。所述第二电池单元200包括依次设置的第二背电极层22、第二光吸收层32、第二缓冲层42、及第二上电极层52。所述第一电池单元100 及第二电池单元200共用所述基底10。第一背电极层21与第二背电极层22通过一绝缘部70而相间隔。请参阅图2，所述第一光吸收层31及第一缓冲层41 具有一沿所述第一光吸收层31及第一缓冲层41的厚度方向的贯穿的第二凹槽 80。所述第一上电极层51覆盖所述第一缓冲层41并延伸至该第二凹槽80而覆盖部分的第二背电极层22，进而与第二背电极层22电连接，即，第一电池单元 100与第二电池单元200进行电连接而实现串联。
所述第一上电极层51延伸至第二凹槽80内的部分可以覆盖所述绝缘部70，也可不覆盖所述绝缘部70。即，所述第二凹槽80与第一刻划(P1刻划)所形成的第一凹槽60可重叠，也可不重叠。
优选的，所述第二凹槽80的底部位于所述绝缘部70与相邻的所述电池单元的背电极层的交界处，位于所述第二凹槽80内的上电极层覆盖部分绝缘部以及相邻的电池单元的部分的背电极层。换句话说，所述第一上电极层51覆盖所述第一缓冲层41并延伸至该第二凹槽80而覆盖部分的第二背电极层22以及部分的绝缘部70(请参照图1)。此时，将所述第一上电极层51延伸至所述第二凹槽80的部分与所述绝缘部70的重叠区域的宽度用d1表示。所述绝缘部的宽度用m表示。m及d1满足以下条件：m＞d1＞0。其中，之所以需要限定m＞ d1，是为了避免所述第一上电极层51延伸至所述第二凹槽80的部分与第一背电极层21相接触导致的短路。进一步，为了更好的避免短路，m及d1优选满足以下条件：m-d1≥30μm。
所述绝缘部70用于将第一背电极层21与第二背电极层22分隔而绝缘，从而实现第一电池单元100与第二电池单元200之间的相对独立性。为了更好的实现绝缘效果，所述绝缘部70的宽度m满足以下条件：30μm≤m≤60μm。
所述绝缘部70的材料包括Si3N4、AlN、SiO2、Al2O3中的至少一种。优选的，所述绝缘部70的材料为Si3N4。
所述第二凹槽80的宽度为任意尺寸，但是为了更好的与电极连接并且考虑缩小死区的尺寸，其宽度优选为50μm～80μm。
所述第一电池单元与第二电池单元通过第三凹槽90间隔。所述第三凹槽90 位于第一上电极层51与第二上电极层52、第一缓冲层41与第二缓冲层42、及第一光吸收层31与第二光吸收层32之间。所述第三凹槽90与所述绝缘部70 配合，实现所述第一电池单元100与第二电池单元200之间的“相对独立”。之所以说是“相对独立”，是因为所述第二凹槽80中的第一上电极层51可实现所述第一电池单元100与第二电池单元200之间的串联。
所述基底10的材料不限，可为玻璃、不锈钢或者柔性材料。所述基底10 的厚度也不做限定。所述基底10起到承载的作用。
所述背电极层20的材料可为金属Mo、Ti、Cr、Cu或透明导电层。透明导电层包括铝掺杂氧化锌(AZO)、硼掺杂氧化锌(AZO)和铟掺杂氧化锡(ITO) 的一种或多种。所述背电极层20的厚度不做限定，优选的，可为200nm～800nm。所述绝缘部70的厚度优选与所述背电极层20的厚度相同。为了有效地防止形成短路，绝缘部70的厚度也可以大于背电极层20的厚度。
所述光吸收层30的材料为铜铟镓硒、铜铟硒、铜铟镓硫中的一种。所述光吸收层30的厚度不做限定，优选的，可为0.5μm～3μm。
所述缓冲层40的材料为硫化锌、硫化镉、硫化铟中的一种。所述缓冲层40 的厚度不做限定，优选的，可为30nm～100nm。
所述上电极层50的材料为透明导电层AZO、BZO、ITO中的一种。所述上电极层50的厚度不做限定，优选的，可为100nm～1μm。
其中，为了层与层之间的亲密结合以及利于光吸收和转换的作用，电极层、光吸收层、缓冲层、上电极层之间也可以增加其它有利层，如氧化锌层、氧化锌镁层等。
请参阅图2，本发明还提供一种薄膜太阳能电池组件的制备方法。该制备方法包括以下步骤：
a)提供一基底10，并在所述基底10上形成一背电极层20，以及对所述背电极层20进行第一刻划而在所述背电极层20形成多个贯穿所述背电极层20的第一凹槽60；
b)于所述第一凹槽60内形成绝缘部70；以及
c)在形成有绝缘部70的背电极层20的表面依次形成光吸收层30及缓冲层 40，并对所述光吸收层30及缓冲层40进行第二刻划而形成贯穿所述光吸收层 30及缓冲层40的第二凹槽80；以及
d)在缓冲层40的表面形成上电极层50，而使所述上电极层50延伸至第二凹槽80，并对所述上电极层50、缓冲层40、及光吸收层30进行第三刻划而形成贯穿所述上电极层50、缓冲层40、及光吸收层30的第三凹槽90，而得到多个串联的电池单元。
在步骤a)中，形成所述背电极层20的方法可为化学气相沉积法、磁控溅射法、原子层沉积法等。所述背电极层20经过第一刻划后可形成多个相互间隔的类似于第一背电极层21及第二背电极层22等的“子背电极层”。该“子背电极层”即为图1示意出第一背电极层21及第二背电极层22。以下步骤c)及d)中第二刻划及第三刻划，即为对光吸收层30、缓冲层40、上电极层50进行刻划形成相对独立且串联的电池单元。图1所标号出第一电池单元100及第二电池单元200是为了更好的说明相邻的两个电池单元中各元件之间的关系而特命名，实际上，第一电池单元100与第二电池单元200，及其中的对应元件的结构相同。
以下，所述光吸收层30的说明可参照上述第一光吸收层31及第二光吸收层32的描述。所述缓冲层40的说明可参照上述第一缓冲层41及第二缓冲层42 的描述。所述上电极层50的说明可参照上述第一上电极层51及第二上电极层 52的描述。在此不再赘述。
在步骤b)中，提供一掩模(图未示)，并通过所述掩模于所述第一凹槽60 内形成绝缘部70。形成绝缘部70的方法可为磁控溅射法、旋涂法、喷涂法或化学气相沉积法中的任意一种。其中，旋涂法及喷涂法的过程为：将绝缘材料与溶剂如乙醇、水等混合得到混合物，然后将该混合物进行旋涂或喷涂工艺，干燥得到绝缘部70。优选的，采用磁控溅射法形成所述绝缘部70。
在步骤c)中，对所述光吸收层30及缓冲层40进行第二刻划而形成所述第二凹槽80。该第二刻划所形成的第二凹槽80，该第二凹槽80可以与第一刻划所形成的第一凹槽60的部分相重叠；也可与第一凹槽60相间隔，即二者不重叠。优选的，所述第二凹槽80与第一凹槽60部分重叠，即通过第二凹槽80而使得所述绝缘部70的部分表面暴露。
所述绝缘部70的宽度用m表示。所述绝缘部70通过所述第二凹槽80而部分暴露的区域的宽度用d1表示，所述绝缘部70的宽度m大于d1。优选的，m- d1≥30μm。
步骤a)、步骤c)中及步骤d)中，第一刻划第二刻划及第三刻划可通过机械刻划或激光刻划实现。优选的，所述第一刻划的方法为激光刻划；第二刻划及第三刻划为机械刻划。所形成的第一凹槽60、所述第二凹槽80及第三凹槽90 的开口的宽度不做限定。所述第二凹槽80及第三凹槽90的宽度可为60μm～80μm。优选的，所述第二凹槽80与第三凹槽90之间的间隔≥30μm。
所述薄膜太阳能电池组件及其制备方法具有以下优点：
由于在第一刻划所形成的第一凹槽60内设置绝缘部70，即多个电池单元中的背电极层通过绝缘部70而间隔设置，从而可在绝缘部70的部分表面的上方进行第二刻划。第二刻划形成第二凹槽80，所述绝缘部可通过所述第二凹槽80 而部分暴露，第二刻划的位置与第一刻划的位置的间距减小，因此，使得死区的面积大大减少，从而所述薄膜太阳能电池组件的转换效率大大提高。
该制备方法中，通过掩模在第一凹槽60内形成绝缘部70，而可在所述绝缘部70的部分表面进行第二刻划。该方法具有工艺简单、高效可控的优点。
以下，将通过以下具体实施例对所述薄膜太阳能电池组件及其制备方法做进一步的说明。
实施例1
本实施例1提供一薄膜太阳能电池组件。该薄膜太阳能电池组件的制备方法如下：
a)提供一基底，并基底上通过磁控溅射法形成背电极层。然后对所述背电极层进行第一刻划，而在所述背电极层形成多个贯穿所述背电极层的第一凹槽。
其中，所述基底的材料为玻璃，所述背电极层为金属Mo层，磁控溅射法中参数为：以氩气为气源，以金属Mo为靶材，真空度0.1Pa～0.7Pa；所述第一刻划为激光刻划，所述第一凹槽的宽度约为60μm。
b)提供一掩模，通过磁控溅射法于所述第一凹槽内形成材料为Si3N4的绝缘部。
c)在形成有绝缘部的背电极层的表面依次形成光吸收层及缓冲层，并对所述光吸收层及缓冲层进行第二刻划而形成贯穿所述光吸收层及缓冲层的第二凹槽，其中所述第二刻划为机械刻划，所述第二凹槽的宽度约为50μm，所述绝缘部通过所述第二凹槽而部分暴露的区域的宽度d1约为30μm，所述光吸收层为厚度约为3μm的铜铟镓硒化物，所述缓冲层为厚度约为80nm的硫化镉。
d)在缓冲层的表面形成上电极层，而使所述上电极层延伸至第二凹槽，并对所述上电极层、缓冲层、及光吸收层进行第三刻划而形成贯穿所述上电极层、缓冲层、及光吸收层的第三凹槽，而得到多个串联的电池单元，其中所述第三刻划为机械刻划，第三凹槽与第二凹槽之间的间距(即第二凹槽的右侧边缘与第三凹槽的左侧边缘之间的距离)为40μm，所述上电极层为厚度约为800nm的 AZO透明导电薄膜，所述第三凹槽的宽度约为60μm。
所得到的薄膜太阳能电池组件中第一凹槽至第三凹槽之间的宽度(即第一凹槽的左侧边缘至第三凹槽的右侧边缘之间的宽度，下同)约为180μm。
实施例2
本实施例2提供一薄膜太阳能电池组件。该薄膜太阳能电池组件的制备方法如下：
a)提供一基底，并基底上通过磁控溅射法形成背电极层。然后对所述背电极层进行第一刻划，而在所述背电极层形成多个贯穿所述背电极层的第一凹槽。
其中，所述基底的材料为玻璃，所述背电极层为金属Mo层，磁控溅射法中参数为：以氩气为气源，以金属Mo为靶材，真空度0.1Pa～0.7Pa；所述第一刻划为激光刻划，所述第一凹槽的宽度约为50μm。
b)提供一掩模，通过磁控溅射法于所述第一凹槽内形成材料为Si3N4的绝缘部。
c)在形成有绝缘部的背电极层的表面依次形成光吸收层及缓冲层，并对所述光吸收层及缓冲层进行第二刻划而形成贯穿所述光吸收层及缓冲层的第二凹槽，其中所述第二刻划为机械刻划，所述第二凹槽的宽度约为70μm，所述绝缘部通过所述第二凹槽而部分暴露的区域的宽度d1约为15μm，所述光吸收层为厚度约为3μm的铜铟镓硒化物，所述缓冲层为厚度约为80nm的硫化镉。
d)在缓冲层的表面形成上电极层，而使所述上电极层延伸至第二凹槽，并对所述上电极层、缓冲层、及光吸收层进行第三刻划而形成贯穿所述上电极层、缓冲层、及光吸收层的第三凹槽，而得到多个串联的电池单元，其中所述第三刻划为机械刻划，第三凹槽与第二凹槽之间的间距为40μm，所述上电极层为厚度约为30微米的AZO透明导电薄膜，所述第三凹槽的宽度约为70μm。
实施例2薄膜太阳能电池组件的制备方法与实施例1的基本相同，区别在于，所述绝缘部通过所述第二凹槽而部分暴露的区域的宽度d1；第一凹槽、第二凹槽及第三凹槽的宽度。
所得到的薄膜太阳能电池组件中第一凹槽至第三凹槽之间的宽度约为 215μm。
实施例3
本实施例3提供一薄膜太阳能电池组件。该薄膜太阳能电池组件的制备方法如下：
a)提供一基底，并基底上通过磁控溅射法形成背电极层。然后对所述背电极层进行第一刻划，而在所述背电极层形成多个贯穿所述背电极层的第一凹槽。
其中，所述基底的材料为玻璃，所述背电极层为金属Mo层，磁控溅射法中参数为：以氩气为气源，以金属Mo为靶材，真空度0.1Pa～0.7Pa；所述第一刻划为激光刻划，所述第一凹槽的宽度约为40μm。
b)提供一掩模，通过磁控溅射法于所述第一凹槽内形成材料为Si3N4的绝缘部。
c)在形成有绝缘部的背电极层的表面依次形成光吸收层及缓冲层，并对所述光吸收层及缓冲层进行第二刻划而形成贯穿所述光吸收层及缓冲层的第二凹槽，其中所述第二刻划为机械刻划，所述第二凹槽的宽度约为80μm，所述绝缘部通过所述第二凹槽而部分暴露的区域的宽度d1约为5μm，所述光吸收层为厚度约为3μm的铜铟镓硒化物，所述缓冲层为厚度约为80nm的硫化镉。
d)在缓冲层的表面形成上电极层，而使所述上电极层延伸至第二凹槽，并对所述上电极层、缓冲层、及光吸收层进行第三刻划而形成贯穿所述上电极层、缓冲层、及光吸收层的第三凹槽，而得到多个串联的电池单元，其中所述第三刻划为机械刻划，第三凹槽与第二凹槽之间的间距为40μm，所述上电极层为厚度约为30微米的AZO透明导电薄膜，所述第三凹槽的宽度约为80μm。
实施例3薄膜太阳能电池组件的制备方法与实施例1的基本相同，区别在于，所述绝缘部通过所述第二凹槽而部分暴露的区域的宽度d1；第一凹槽、第二凹槽及第三凹槽的宽度。
所得到的薄膜太阳能电池组件中第一凹槽至第三凹槽之间的宽度为235μm。
实施例4
本实施例4提供一薄膜太阳能电池组件。该薄膜太阳能电池组件的制备方法如下：
a)提供一基底，并基底上通过磁控溅射法形成背电极层。然后对所述背电极层进行第一刻划，而在所述背电极层形成多个贯穿所述背电极层的第一凹槽。
其中，所述基底的材料为玻璃，所述背电极层为金属Mo层，磁控溅射法中参数为：以氩气为气源，以金属Mo为靶材，真空度0.1Pa～0.7Pa；所述第一刻划为激光刻划，所述第一凹槽的宽度约为40μm。
b)提供一掩模，通过磁控溅射法于所述第一凹槽内形成材料为Si3N4的绝缘部。
c)在形成有绝缘部的背电极层的表面依次形成光吸收层及缓冲层，并对所述光吸收层及缓冲层进行第二刻划而形成贯穿所述光吸收层及缓冲层的第二凹槽，其中所述第二刻划为机械刻划，所述第二凹槽的宽度约为60μm，所述绝缘部没有通过所述第二凹槽而暴露(即d1为0)，所述第二凹槽与第一凹槽的间隔为10μm，所述光吸收层为厚度约为3μm的铜铟镓硒化物，所述缓冲层为厚度约为80nm的硫化镉。
d)在缓冲层的表面形成上电极层，而使所述上电极层延伸至第二凹槽，并对所述上电极层、缓冲层、及光吸收层进行第三刻划而形成贯穿所述上电极层、缓冲层、及光吸收层的第三凹槽，而得到多个串联的电池单元，其中所述第三刻划为机械刻划，第三凹槽与第二凹槽之间的间距为40μm，所述上电极层为厚度约为30微米的AZO透明导电薄膜，所述第三凹槽的宽度约为60μm。
实施例4薄膜太阳能电池组件的制备方法与实施例1的基本相同，区别在于，所述第一刻划的位置与第二刻划的位置相间隔，即步骤c)中第二刻划后，所述绝缘部没有通过所述第二凹槽而暴露；以及第一凹槽的宽度。
所得到的薄膜太阳能电池组件中第一凹槽至第三凹槽之间的宽度约为 210μm。
为了更好的说明本发明所述薄膜太阳能电池组件的优异性能，还提供一对比例。
对比例
本对比例提供一薄膜太阳能电池组件。该薄膜太阳能电池组件的制备方法如下：
a)提供一基底，并基底上通过磁控溅射法形成背电极层。然后对所述背电极层进行第一刻划，而在所述背电极层形成多个贯穿所述背电极层的第一凹槽。
其中，所述基底的材料为玻璃，所述背电极层为金属Mo层，磁控溅射法中参数为：以氩气为气源，以金属Mo为靶材，真空度0.1Pa～0.7Pa；所述第一刻划为激光刻划，所述第一凹槽的宽度约为60μm。
b)在形成有第一凹槽的背电极层的表面依次形成光吸收层及缓冲层，并对所述光吸收层及缓冲层进行第二刻划而形成贯穿所述光吸收层及缓冲层的第二凹槽，其中所述第二刻划为机械刻划，所述第二凹槽的宽度约为60μm，第二凹槽与第一凹槽之间的间距为40μm，所述光吸收层为厚度约为3μm的铜铟镓硒化物，所述缓冲层为厚度约为80nm的硫化镉。
c)在缓冲层的表面形成上电极层，而使所述上电极层延伸至第二凹槽，并对所述上电极层、缓冲层、及光吸收层进行第三刻划而形成贯穿所述上电极层、缓冲层、及光吸收层的第三凹槽，而得到多个串联的电池单元，其中所述第三刻划为机械刻划，所述上电极层为厚度约为800nm的AZO透明导电薄膜，所述第三凹槽的宽度约为60μm，第三凹槽与第二凹槽之间的间距为40μm。
本对比例的薄膜太阳能电池组件的制备方法与实施例4的基本相同，区别在于，没有在第一凹槽内形成绝缘部的步骤，而是直接在所述背电极层上形成光吸收层，即，第一凹槽内填充的是光吸收层。
所得到的薄膜太阳能电池组件中第一凹槽至第三凹槽之间的宽度约为 260μm。可见，相对于实施例1，对比例的死区部分的面积较大。从上述实施例 1至实施例4可以看出，薄膜太阳能电池组件的死区面积可大大较小，因而，在应用时，薄膜太阳能电池组件的光电转换效率可大大提高。
如上所描述的三个凹槽的宽度可以按照实施工艺进行调整，不限于以上所述尺寸，并且以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种薄膜太阳能电池组件，其包括一基底及设置于所述基底上的多个串联且相互间隔设置的电池单元，每一个所述电池单元包括依次设置的背电极层、光吸收层、缓冲层、及上电极层，其特征在于，相邻的所述电池单元的背电极层之间设有贯穿所述背电极层的第一凹槽，所述第一凹槽内填充有绝缘部，以使相邻的电池单元的背电极层之间绝缘间隔，每一个所述电池单元开设有贯穿所述光吸收层及所述缓冲层的第二凹槽，所述上电极层覆盖所述缓冲层并延伸至所述第二凹槽而接触相邻的所述电池单元的背电极层，进而将相邻的所述电池单元串联，相邻的所述电池单元之间开设有第三凹槽，所述第三凹槽将相邻的所述电池单元的上电极层绝缘间隔。
2.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述第三凹槽贯穿并间隔相邻的所述电池单元的上电极层、缓冲层以及光吸收层。
3.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述绝缘部采用掩模沉积方式填充至所述第一凹槽。
4.如权利要求3所述的薄膜太阳能电池组件，其特征在于，所述绝缘部的材料为Si3N4、AlN、SiO2、Al2O3中的至少一种。
5.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述第二凹槽的底部位于所述绝缘部与相邻的所述电池单元的背电极层的交界处，位于所述第二凹槽内的上电极层覆盖部分绝缘部以及相邻的电池单元的部分的背电极层。
6.如权利要求5所述的薄膜太阳能电池组件，其特征在于，定义所述上电极层延伸至所述第二凹槽的部分与所述绝缘部的重叠区域的宽度为d1，所述绝缘部的宽度为m，m及d1满足以下条件：m＞d1＞0。
7.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述薄膜太阳能电池组件还包括至少一氧化锌层，所述氧化锌层设置于所述背电极层与光吸收层之间、光吸收层与缓冲层之间、或缓冲层与上电极层之间。
8.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述第二凹槽及第三凹槽的宽度为50μm～80μm。
9.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述绝缘部的厚度大于等于所述背电极层的厚度。
10.如权利要求1所述的薄膜太阳能电池组件，其特征在于，所述光吸收层的材料为铜铟镓硒、铜铟硒、铜铟镓硫中的任意一种。
CN201810102076.3A 2018-02-01 2018-02-01 薄膜太阳能电池组件 Pending CN108565303A (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201810102076.3A CN108565303A (zh) 2018-02-01 2018-02-01 薄膜太阳能电池组件
PCT/CN2018/090710 WO2019148733A1 (zh) 2018-02-01 2018-06-11 薄膜太阳能电池
US16/089,874 US20200303572A1 (en) 2018-02-01 2018-06-11 Thin film solar cell
KR1020187030617A KR20190094288A (ko) 2018-02-01 2018-06-11 박막 태양 전지
EP18769577.0A EP3748696A1 (en) 2018-02-01 2018-06-11 Thin film solar cell
JP2018555611A JP2020508559A (ja) 2018-02-01 2018-06-11 薄膜太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810102076.3A CN108565303A (zh) 2018-02-01 2018-02-01 薄膜太阳能电池组件

Publications (1)

Publication Number Publication Date
CN108565303A true CN108565303A (zh) 2018-09-21

Family

ID=63530145

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810102076.3A Pending CN108565303A (zh) 2018-02-01 2018-02-01 薄膜太阳能电池组件

Country Status (6)

Country Link
US (1) US20200303572A1 (zh)
EP (1) EP3748696A1 (zh)
JP (1) JP2020508559A (zh)
KR (1) KR20190094288A (zh)
CN (1) CN108565303A (zh)
WO (1) WO2019148733A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403544A (zh) * 2018-12-27 2020-07-10 北京汉能光伏投资有限公司 受损太阳能电池芯片回收方法及装置
CN112786737A (zh) * 2021-01-26 2021-05-11 凯盛光伏材料有限公司 Cigs薄膜太阳能电池组件及其刻划方法
US20220173165A1 (en) * 2020-11-27 2022-06-02 Takaya Ito Photoelectric conversion module, electronic device, and power supply module

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116888744A (zh) 2021-11-09 2023-10-13 株式会社东芝 太阳能电池、多结型太阳能电池、太阳能电池模块及太阳能电池发电系统
CN114335360B (zh) * 2022-01-10 2023-05-05 华能新能源股份有限公司 一种免划刻大面积钙钛矿太阳能电池的制备方法
WO2024047795A1 (ja) 2022-08-31 2024-03-07 株式会社 東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽電池発電システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308362A (ja) * 2000-04-24 2001-11-02 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜太陽電池の製造方法
CN102449780A (zh) * 2009-03-31 2012-05-09 Lg伊诺特有限公司 太阳能电池装置及其制造方法
CN103988317A (zh) * 2011-10-11 2014-08-13 Lg伊诺特有限公司 太阳能电池及太阳能电池模块
CN106229353A (zh) * 2016-08-19 2016-12-14 中山瑞科新能源有限公司 一种先并联再串联的薄膜电池组件制备方法
CN107210324A (zh) * 2014-12-23 2017-09-26 荷兰能源研究中心基金会 用于制造薄膜太阳能电池装置的方法及薄膜太阳能电池装置
CN208256689U (zh) * 2018-02-01 2018-12-18 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池组件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012204617A (ja) * 2011-03-25 2012-10-22 Idemitsu Kosan Co Ltd 光起電力素子、及び当該光起電力素子の製造方法
KR101283072B1 (ko) * 2011-10-18 2013-07-05 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
CN103378106A (zh) * 2012-04-28 2013-10-30 杜邦太阳能有限公司 太阳能电池及其制造方法
US20150263195A1 (en) * 2014-03-14 2015-09-17 Tsmc Solar Ltd. Solar cell and method of fabricating same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308362A (ja) * 2000-04-24 2001-11-02 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜太陽電池の製造方法
CN102449780A (zh) * 2009-03-31 2012-05-09 Lg伊诺特有限公司 太阳能电池装置及其制造方法
CN103988317A (zh) * 2011-10-11 2014-08-13 Lg伊诺特有限公司 太阳能电池及太阳能电池模块
CN107210324A (zh) * 2014-12-23 2017-09-26 荷兰能源研究中心基金会 用于制造薄膜太阳能电池装置的方法及薄膜太阳能电池装置
CN106229353A (zh) * 2016-08-19 2016-12-14 中山瑞科新能源有限公司 一种先并联再串联的薄膜电池组件制备方法
CN208256689U (zh) * 2018-02-01 2018-12-18 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池组件

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403544A (zh) * 2018-12-27 2020-07-10 北京汉能光伏投资有限公司 受损太阳能电池芯片回收方法及装置
US20220173165A1 (en) * 2020-11-27 2022-06-02 Takaya Ito Photoelectric conversion module, electronic device, and power supply module
US11832461B2 (en) * 2020-11-27 2023-11-28 Ricoh Company, Ltd. Photoelectric conversion module, electronic device, and power supply module
CN112786737A (zh) * 2021-01-26 2021-05-11 凯盛光伏材料有限公司 Cigs薄膜太阳能电池组件及其刻划方法

Also Published As

Publication number Publication date
EP3748696A1 (en) 2020-12-09
US20200303572A1 (en) 2020-09-24
WO2019148733A1 (zh) 2019-08-08
KR20190094288A (ko) 2019-08-13
JP2020508559A (ja) 2020-03-19

Similar Documents

Publication Publication Date Title
CN108565303A (zh) 薄膜太阳能电池组件
CN108447919A (zh) 薄膜太阳能电池组件的制备方法
WO2019144565A1 (zh) 薄膜太阳能电池
CN102983209B (zh) 太阳能电池及其制造方法
US9893221B2 (en) Solar cell and method of fabricating the same
US8779282B2 (en) Solar cell apparatus and method for manufacturing the same
WO2010025291A3 (en) Four terminal multi-junction thin film photovoltaic device and method
US9818897B2 (en) Device for generating solar power and method for manufacturing same
KR20110035771A (ko) 태양전지 및 이의 제조방법
CN208256689U (zh) 薄膜太阳能电池组件
JP2012532442A (ja) 太陽電池及びその製造方法
KR101201542B1 (ko) 박막태양전지 및 그 제조방법
CN103035778A (zh) 用来制造穿透式太阳能电池模块的方法
KR20110047724A (ko) 태양전지 및 이의 제조방법
CN105023958B (zh) Cigs基薄膜太阳能电池及其制备方法
KR101251841B1 (ko) 태양광 발전장치 및 이의 제조방법
US9871159B2 (en) Apparatus for generating electricity using solar power and method for manufacturing same
CN208608207U (zh) 太阳能发电组件及薄膜太阳能电池
JP2005322707A (ja) 集積型太陽電池
TWI517416B (zh) 異質接面太陽能電池及其製造方法
CN108735862A (zh) 太阳能发电组件、薄膜太阳能电池及其制备方法
US20140261679A1 (en) Solar cell apparatus and method of fabricating the same
CN209434193U (zh) 光伏电池芯片
JP2013149699A (ja) 集積化太陽電池の製造方法
CN209626235U (zh) 一种太阳能电池

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180921

WD01 Invention patent application deemed withdrawn after publication