CN108559956A - A kind of strong glow discharge deposition diamond-like-carbon film device and processing method - Google Patents
A kind of strong glow discharge deposition diamond-like-carbon film device and processing method Download PDFInfo
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- CN108559956A CN108559956A CN201810320754.3A CN201810320754A CN108559956A CN 108559956 A CN108559956 A CN 108559956A CN 201810320754 A CN201810320754 A CN 201810320754A CN 108559956 A CN108559956 A CN 108559956A
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- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 60
- 230000008021 deposition Effects 0.000 title claims abstract description 49
- 238000003672 processing method Methods 0.000 title abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 64
- 230000008020 evaporation Effects 0.000 claims abstract description 59
- 238000001704 evaporation Methods 0.000 claims abstract description 59
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 31
- 239000012495 reaction gas Substances 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000007704 transition Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 37
- 238000005477 sputtering target Methods 0.000 claims description 29
- 239000000498 cooling water Substances 0.000 claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000010025 steaming Methods 0.000 claims 2
- 239000004575 stone Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
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- 150000001793 charged compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
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- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
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- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to technical field of vacuum plating, and in particular to a kind of strong glow discharge deposition diamond-like-carbon film device and processing method.The strong glow discharge deposition diamond-like-carbon film device includes vacuum cavity, vacuum suction device, reaction gas control and distributor, multi sphere power supply；Multi sphere evaporation source is equipped in the vacuum cavity, the front end of the multi sphere evaporation source is provided with multi sphere baffle；One impressed current anode is set in the vacuum cavity.The processing method includes workpiece cleaning, electron bombardment heating cleaning, icon bombardment cleaning, deposition bottom, deposition transition zone, depositing diamond-like carbon film.The device and method provided generate by using multi sphere evaporation source and control the concentration and energy of high energy electron, influence of the big particle that multi sphere baffle is used to that multi sphere evaporation source to be avoided to generate to diamond-like carbon film, the ionization level of plasma when controlling depositing diamond-like carbon film using impressed current anode, to improve film deposition rate, glossiness and performance.
Description
Technical field
The invention belongs to technical field of vacuum plating, and in particular to a kind of strong glow discharge deposition diamond-like-carbon film device
And processing method.
Background technology
In general, diamond-like carbon-base film (DLC) is that one kind contains diamond lattic structure (SP3 hybrid bonds) and graphite knot
The metastable amorphous state substance of structure (SP2 hybrid bonds), carbon atom are mainly combined with SP3 and SP2 hybrid bonds.Amorphous carbon base film one
As can be divided into hydrogen-containing carbon film (a-C:H) and not two class of hydrogen-containing carbon film (a-C).Hydrogen content in hydrogeneous DLC film is in 20at.%
The ingredient of~50at.%, SP3 hybrid bond is less than 70%.Commonly tetrahedral amorphous carbon (ta-C) film in hydrogen-free DLC film.
With SP in ta-C coatings3Based on hybrid bond, SP3The content of hybrid bond is generally greater than 70%.
The deposition of diamond-like carbon film (DLC) is to use ion beam depositing earliest, after decades of development, now
Successfully develop new method and new technology that many physical vapour deposition (PVD)s, chemical vapor deposition and liquid phase method prepare DLC film.
Plasma auxiliary chemical vapor deposition (PACVD) prepares diamond-like carbon film and uses CH4、C2H2Deng containing hydrocarbon
Organic gas is carbon source, has the features such as surface is fine and smooth, glossiness is good, and hardness is high, and wear-resisting property is good, but is plated in high-end decoration
Film field, client is to the very tight of cost control, it is desirable that improves deposition velocity on the basis of ensureing performance and appearance.This technology master
Solve the problems, such as to be to provide it is a kind of can fast deposition high-performance diamond-like carbon film equipment and processing method.
Invention content
Based on the shortcomings and deficiencies of the above-mentioned prior art, the primary purpose of the present invention is that it is heavy to provide a kind of strong glow discharge
Product diamond-like-carbon film device, the equipment are based on plasma auxiliary chemical vapor deposition (PACVD) technology, pass through structure innovation
The design high energy electron that effectively control multi sphere evaporation source generates and variation of other particles in deposition process, and using auxiliary
Anode is to improve deposition rate and film performance.
It is a further object of the present invention to provide a kind of processing based on the strong glow discharge deposition diamond-like-carbon film device
Method.
The purpose of the invention is achieved by the following technical solution：
A kind of strong glow discharge deposition diamond-like-carbon film device, including vacuum cavity, vacuum suction device, reaction gas
Control and distributor, multi sphere power supply；Vacuum orifice, workpiece rotating frame, multi sphere evaporation source, magnetic control is equipped in the vacuum cavity to splash
It shoots at the target, several heating tubes, several gas distribution tubes；The vacuum orifice is set to the vacuum cavity one side, the workpiece
Pivoted frame is set to the intermediate region of the vacuum cavity, and the heating tube and gas distribution tube are evenly arranged in workpiece rotating frame two
Side；The multi sphere evaporation source is set to vacuum cavity side, and the magnetic controlled sputtering target is set to opposite with multi sphere evaporation source another
One side；The front end of the multi sphere evaporation source is provided with the multi sphere baffle of flexible connection.
Further, the magnetic controlled sputtering target front end is provided with the target baffle of flexible connection.
Further, several work hangers for placing workpiece, the workpiece rotating frame, workpiece is arranged in the workpiece rotating frame
Hanger and workpiece are nonisulated connection between each other.
Further, the strong glow discharge deposition diamond-like-carbon film device is additionally provided with workpiece power supply unit, the work
Part power supply unit includes workpiece power supply and electric source modes switching switching group；The workpiece power supply is opened by electric source modes switching
Pass group switches over cleaning model or depositional model；
Further, electric source modes switching switching group include negative switch, the first earthing switch, positive switch,
Second earthing switch；Described negative switch one end is electrically connected with the workpiece, and the cathode of the other end and the workpiece power supply connects
It connects；First earthing switch one end is connect with the cathode of the workpiece power supply, other end ground connection；Described positive switch one end with
The workpiece is electrically connected, and the other end is connect with the anode of the workpiece power supply；Second earthing switch one end and the work
The anode connection of part power supply, other end ground connection.
When workpiece power supply is cleaning model, the anode of workpiece power supply connects the workpiece rotating frame, cathode ground connection；Work as workpiece
When power supply is depositional model, the cathode of workpiece power supply connects the workpiece rotating frame, plus earth.The workpiece switches power supply to clearly
It can be used for workpiece cleaning when mold cleaning formula；The workpiece can be used for workpiece depositing coating when switching power supply to depositional model.
Further, the strong glow discharge deposition diamond-like-carbon film device includes an impressed current anode system；It is described auxiliary
Supporing yang electrode systems include setting impressed current anode power supply and impressed current anode；The impressed current anode power supply is set to outside vacuum cavity
Portion, the impressed current anode are set in the vacuum cavity, and the impressed current anode passes through impressed current anode power cord and impressed current anode
Positive pole connects, and the impressed current anode by stretching into vacuum cavity down at the top of vacuum cavity.
Further, the impressed current anode includes shell, power cord protection pipe, cooling water inlet pipe, cooling water outlet
Pipe, insulation vacuum sealing device；The shell is the cylindrical shell with inner cavity, and the upper end of the shell is close by the vacuum that insulate
Seal apparatus is connect with the top of the vacuum cavity；The power cord protection pipe connects the anode casing；The cooling water into
Mouth pipe is stretched into the bottom of the inner cavity of the shell by the top of the shell, and the cooling water outlet pipe is set to the top of the shell
End.
A kind of method of strong glow discharge deposition diamond-like carbon film, based on above-mentioned strong glow discharge deposition diamond-like
Carbon film equipment, this method comprises the following steps：
S1, it is put into vacuum cavity after cleaning workpiece；
S2, vacuum cavity is vacuumized and is heated, workpiece is toasted；
S3, it is passed through working gas in vacuum cavity, keeps the workpiece on workpiece rotating frame positively charged, multi sphere baffle is more in blocking
The state of arc evaporation source, opens multi sphere power supply, and the electronics that multi sphere evaporation source generates carries out bombardment heating cleaning to workpiece；
S4, keep the workpiece on workpiece rotating frame negatively charged, working gas be passed through in vacuum cavity, open impressed current anode power supply,
Multi sphere baffle is in the state for blocking multi sphere evaporation source, opens multi sphere power supply, and the electronics that multi sphere evaporation source generates promotes work gas
The ionization of body, working gas cation carry out Bombardment and cleaning again to workpiece；
S5, keep the workpiece on workpiece rotating frame negatively charged, working gas is passed through in vacuum cavity, multi sphere baffle is more in blocking
The state of arc evaporation source closes multi sphere power supply, and target baffle is opened, and starts and deposits bottom in workpiece surface using magnetic controlled sputtering target
Layer；
S6, keep the workpiece on workpiece rotating frame negatively charged, close multi sphere power supply, multi sphere baffle is in and blocks multi sphere evaporation source
State is passed through working gas and reaction gas, using magnetic controlled sputtering target in workpiece surface reactive deposition transition zone；
S7, impressed current anode power supply is opened, closes magnetic controlled sputtering target, target baffle blocks magnetic controlled sputtering target, makes workpiece rotating frame
On workpiece it is negatively charged, be passed through working gas and reaction gas, multi sphere baffle is in the state for blocking multi sphere evaporation source, opens more
Arc power, using reaction gas in workpiece surface depositing diamond-like carbon film.
It is to protect target not contaminated that the effect of target baffle is arranged before magnetic controlled sputtering target.
Further, in step S7 impressed current anode voltage 20-200V.
In the step s 7, multi sphere baffle is enabled to stop atom, atomic group and the positively charged grain of the generation of multi sphere evaporation source
Son avoids the influence to depositional coating；The electronics that multi sphere evaporation source generates can improve aura and put in using for impressed current anode
Electric strength improves speed, the glossiness of the depositional coating of workpiece surface to improve the ionization level of reaction gas and working gas
And performance.
The art of this patent scheme has the advantage that compared with the existing technology and effect：
(1) the strong glow discharge deposition diamond-like carbon film device and method that this patent scheme is provided, by multi sphere
The multi sphere baffle for the flexible connection that can be enabled or close is set before evaporation source, depositing diamond-like carbon film is being carried out to workpiece
When, multi sphere baffle is enabled to stop that metallic atom that multi sphere evaporation source generates, the particles such as ion, atomic group do not allow these particles
It is diffused into deposition region, only a large amount of high energy electrons that multi sphere evaporation source generates are introduced into reaction gas, high energy electron can be with
Gas molecule generates inelastic collision, and molecular activation, promotion is made freely to intensify and ionize, and generates the strong high energy grain of chemism
Son, long-life metastable atom, excited atom, atom or a large amount of active particles such as molecular ion and electronics, these active grains
Son is easy to deposit to form the fine and close diamond-like carbon film containing SP2 and SP3 chemical bonds in workpiece surface；Due to high energy electron
The electron concentration of the common glow discharge deposition film plating process of concentration ratio is high, the ionization level of plasma is greatly improved, to carry
High deposition rate, glossiness and film performance.
(2) the strong glow discharge deposition diamond-like carbon film device and method that this patent scheme is provided, by vacuum
Increase impressed current anode in cavity, the use of multi sphere evaporation source and multi sphere baffle, multi sphere evaporation source is coordinated to provide electron source, can pass through
Impressed current anode attracts electronics, changes electronics running orbit, the collision probability of electronics and reaction gas is improved, to improve reaction gas
The ionization level of body improves the deposition rate, glossiness and performance of film layer.
Description of the drawings
Fig. 1 is the planar structure schematic diagram of strong glow discharge deposition diamond-like-carbon film device in embodiment.
Fig. 2 is the structural schematic diagram of the impressed current anode of strong glow discharge deposition diamond-like-carbon film device in embodiment.
In figure：1- vacuum cavities, 2- vacuum orifices, 3- electric source modes switch switching group, 4- workpiece power supplys, 5- multi sphere electricity
Source, 6- multi sphere evaporation sources, 7- multi sphere baffles, 8- impressed current anodes, 9- impressed current anode power supplys, 10- workpiece rotating frames, 11- observation windows,
12- fire doors, 13- heating tubes, 14- gas distribution tubes, 15- magnetic controlled sputtering targets, 16- power cord protection pipes, 17- cooling water inlets
Pipe, 18- cooling water outlet pipes, 19- insulation vacuum sealing devices, 20- target baffles, 80- shells, 301- negative switch, 302-
First earthing switch, 303- positive switch, the second earthing switches of 304-.
Specific implementation mode
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment
As shown in Figure 1, a kind of strong glow discharge deposition diamond-like-carbon film device, including vacuum cavity 1, vacuum suction dress
Set (conventional arrangement is not shown in figure), reaction gas control and distributor (conventional arrangement is not shown in figure), multi sphere power supply
5；Vacuum orifice 2, workpiece rotating frame 10, multi sphere evaporation source 6, magnetic controlled sputtering target 15, several heating tubes are equipped in the vacuum cavity 1
13, several gas distribution tubes 14；The vacuum orifice 2 is set to 1 one side of the vacuum cavity, and the workpiece rotating frame 10 is arranged
In the intermediate region of the vacuum cavity 1, the heating tube 13 and gas distribution tube 14 are evenly arranged in 10 both sides of workpiece rotating frame；
The multi sphere evaporation source 6 is set to 1 side of vacuum cavity, and the magnetic controlled sputtering target 15 is set to opposite with multi sphere evaporation source 6
Another side；The front end of the multi sphere evaporation source 6 is provided with the multi sphere baffle 7 of flexible connection.
The multi sphere power supply 5 is used to power to multi sphere evaporation source 6, and the multi sphere power supply 5 is DC power supply or the pulse power.
The multi sphere evaporation source 6 is equipped with several multiple arc targets, and the multiple arc target is sequentially distributed from top to bottom.
The multi sphere baffle 7 is flexible connection, and translatable or rotation is enabled or closed, and is evaporated for stopping from multi sphere
Source 6 generates the particles such as atom, atomic group, the positively charged particle sent out.It is equipped with for height between multi sphere baffle 7 and multi sphere evaporation source 6
Can electronics by side gap.
15 front end of the magnetic controlled sputtering target is provided with the target baffle 20 of flexible connection.
The magnetic controlled sputtering target 15 is cylindrical target.
Several work hangers (conventional arrangement is not shown in figure) for placing workpiece, institute is arranged in the workpiece rotating frame 10
It is nonisulated connection to state workpiece rotating frame 10, work hanger and workpiece between each other.The workpiece rotating frame 10 is multiaxis public affairs rotation knot
Structure, work hanger are connect by shaft with 10 activity of the workpiece rotating frame；The workpiece rotating frame 10 passes through transmission mechanism, band
The rotation of dynamic work hanger and the revolution of the workpiece rotating frame 10.
The strong glow discharge deposition diamond-like-carbon film device is additionally provided with workpiece power supply unit, the workpiece power supply unit
Switch switching group 3 including workpiece power supply 4 and electric source modes；The workpiece power supply 4 by the electric source modes switch switching group 3 into
Row switching cleaning model or depositional model；
Electric source modes switching switching group 3 connects including negative switch 301, the first earthing switch 302, positive switch 303, second
Ground switch 304；301 one end of the negative switch is electrically connected with the workpiece, and the cathode of the other end and the workpiece power supply 4 connects
It connects；Described first earthing switch, 302 one end is connect with the cathode of the workpiece power supply 4, other end ground connection；The positive switch
303 one end are electrically connected with the workpiece, and the other end is connect with the anode of the workpiece power supply 4；Second earthing switch 304
One end is connect with the anode of the workpiece power supply 4, other end ground connection.
When workpiece power supply 4 is cleaning model, positive switch 303 and the first earthing switch 302 are closed, disconnects negative switch
301 and second earthing switch 304, at this point, the anode of workpiece power supply 4 connects the workpiece rotating frame, cathode ground connection；When workpiece power supply
For depositional model when, close negative switch 301 and the second earthing switch 304, disconnect positive switch 303 and the first earthing switch
302, at this point, the cathode of workpiece power supply 4 connects the workpiece rotating frame, plus earth.
The workpiece power supply 4 can be used for workpiece cleaning when switching to cleaning model；The workpiece power supply 4 switches to deposition mould
It can be used for workpiece depositing coating when formula.
The workpiece power supply 4 is DC power supply or the pulse power.Before depositional coating, workpiece band can be made using cleaning model
Positive electricity, the high energy electron that multi sphere evaporation source 6 generates are attracted by workpiece, to carry out bombardment heating cleaning to workpiece.
When the workpiece power supply 4 is using depositional model, cathode connects the workpiece rotating frame 10.Before depositional coating, it can make
Cation in 1 plasma of vacuum cavity carries out Bombardment and cleaning to workpiece；In depositional coating, make in plasma just
Ion bombards workpiece, improves the comprehensive performance of film layer under the action of back bias voltage.
The strong glow discharge deposition diamond-like-carbon film device includes an impressed current anode system；The impressed current anode system
Including setting impressed current anode power supply 9 and impressed current anode 8；The impressed current anode power supply 9 is set to outside vacuum cavity 1, described
Impressed current anode 8 is set in the vacuum cavity, and the impressed current anode 8 is connect by power cord with 9 anode of impressed current anode power supply,
The impressed current anode 8 stretches into vacuum cavity 1 down by 1 top of vacuum cavity, in depositing diamond-like carbon film, impressed current anode 8
Attract electronics, increase electron energy, promote the ionization of reaction gas, improves the performance of aura intensity and depositional coating.
As shown in Fig. 2, the impressed current anode 8 includes shell 80, power cord protection pipe 16, cooling water inlet pipe 17, cooling
Water outlet pipe 18, insulation vacuum sealing device 19；The shell 80 be the cylindrical shell 80 with inner cavity, the shell 80 it is upper
End is connect by the vacuum sealing device 19 that insulate with the top of the vacuum cavity 1；The power cord protection pipe 16 connects described
Shell 80, the impressed current anode power cord are connect across the power cord protection pipe 16 with the shell 80；The cooling water into
Mouth pipe 17 is stretched into the bottom of the inner cavity of the shell 80 by the top of the shell 80, and the cooling water outlet pipe 18 is set to described
The top of shell 80；Power cord protection pipe 16, cooling water inlet pipe 17 and cooling water outlet pipe 18 are close by the vacuum that insulate respectively
Seal apparatus 19 is connect with shell 80.
The cooling water of impressed current anode 8 enters 80 inner cavity of shell from cooling water inlet pipe 17, then draws from cooling water outlet pipe 18
Go out.
In addition, the strong glow discharge deposition diamond-like-carbon film device, which is equipped with PLC, controls operating system, for controlling plating
Membrane process；Temperature sensor is additionally provided in the vacuum cavity 1 of the strong glow discharge deposition diamond-like-carbon film device, pressure passes
Sensor, the fire door 12 passed in and out for workpiece, are equipped with observation window 11 on the fire door 12.
Based on the processing method of above-mentioned strong glow discharge deposition diamond-like-carbon film device, include the following steps：
S1, it is put into vacuum cavity after cleaning workpiece；
S2, vacuum cavity is vacuumized and is heated, workpiece is toasted；Control parameter：Background inside vacuum cavity is true
Sky is 0.02-0.001Pa, and heating temperature is 150-300 DEG C, pumpdown time 30-90min；
S3, it is passed through argon working gas (Ar) in vacuum cavity, workpiece is switched power supply into cleaning model, makes workpiece rotating frame
On workpiece it is positively charged, multi sphere baffle is in the state of multi sphere evaporation source blocked, and opens multi sphere power supply, what multi sphere evaporation source generated
Electronics carries out bombardment heating cleaning to workpiece；Control parameter：Workpiece supply voltage is 20-200V, frequency 2K-10KHz, duty
Than 10%-50%, the electric current 30-60A of multi sphere evaporation source, bombardment time 5-30min, Ar volume flow:30-100SCCM, vacuum
Degree：0.03-0.3Pa, temperature：100-250℃；
S4, it is passed through working gas Ar in vacuum cavity, workpiece is switched power supply into depositional model, makes the work on workpiece rotating frame
Part is negatively charged, and multi sphere baffle is in the state for blocking multi sphere evaporation source, opens multi sphere power supply, opens impressed current anode power supply, multi sphere
The electronics that evaporation source generates promotes the ionization of working gas Ar, working gas cation Ar+Bombardment and cleaning again is carried out to workpiece；
Control parameter：Workpiece supply voltage is 20-200V, frequency 2K-10KHz, duty ratio 10%-50%, the voltage of impressed current anode
For 100-400V, the electric current 30-60A of multi sphere evaporation source, bombardment time 5-30min, Ar volume flow:50-200SCCM, vacuum
Degree：0.05-0.5Pa, temperature：100-250℃；
In other performances, other control conditions of step S4 are constant, and multi sphere baffle can also be in open shape
State carries out Bombardment and cleaning to workpiece at this time and the adhesive force of coating on workpiece can be improved, but can influence product surface glossiness.
S5, workpiece power supply is selected as depositional model, keeps the workpiece on workpiece rotating frame negatively charged, be passed through suitable working gas
Ar closes multi sphere power supply, and multi sphere baffle is in the state for blocking multi sphere evaporation source, and target baffle is opened, and starts and uses magnetic control
Sputtering target deposits bottom in workpiece surface；Control parameter：Magnetic controlled sputtering target is one kind in titanium target, chromium target or zirconium target, target electricity
Stream：10-30A, the voltage of workpiece power supply：(0~200V), duty ratio：20-80%, frequency：10-80KHZ, time 10-
30min, Ar volume flow:50-300SCCM, vacuum degree：0.1-0.9Pa, temperature：100-300℃；
S6, workpiece power supply is selected as depositional model, keeps the workpiece on workpiece rotating frame negatively charged, close multi sphere power supply, multi sphere
Baffle is in the state for blocking multi sphere evaporation source, working gas Ar and reaction gas is passed through, using magnetic controlled sputtering target to workpiece table
Face deposits bottom；Control parameter：Target current 10-30A, workpiece bias supply voltage 0-200V, duty ratio：20-80%, frequency
Rate：10-80KHZ, time 10-30min, Ar volume flows:50-300SCCM, reaction gas are acetylene or methane；Reaction gas
Body volume flow：10-200SCCM, vacuum degree：0.1-0.9Pa, temperature：100-300℃；In the step, before magnetic controlled sputtering target
Target baffle be in an open state, target is not stopped；
S7, impressed current anode power supply is opened, closes magnetic controlled sputtering target, target baffle blocks magnetic controlled sputtering target, the choosing of workpiece power supply
Depositional model keeps the workpiece on workpiece rotating frame negatively charged, is passed through working gas and reaction gas, and multi sphere baffle is in and blocks multi sphere
The state of evaporation source opens multi sphere power supply, using reaction gas in workpiece surface depositing diamond-like carbon film.Control parameter：Work
It is argon gas to make gas, and reaction gas is acetylene or methane, the voltage-(200~1500V) of workpiece power supply, duty ratio：20-
80%, frequency：10-80KHZ, time 30-120min, Ar volume flows:20-200SCCM, reaction gas volume flow：100-
2000SCCM, vacuum degree：1.0-10.0Pa, temperature：100-300 DEG C, the electric current of multi sphere power supply：30-70A；The electricity of impressed current anode
Pressure is 20-200V.
Embodiment 2：Class is deposited in bloom stainless steel work-piece using the strong glow discharge deposition diamond-like-carbon film device
Diamond-like carbon film.
It is as follows：
(1) workpiece is subjected to conventional prerinse, then puts the workpiece in workpiece rotating frame 10, close vacuum cavity 1 and taken out
Vacuum and heated baking；Control parameter：It is evacuated to base vacuum 0.009Pa, heating temperature：200 DEG C, the pumpdown time：
60min。
(2) electron bombardment heating cleaning：Workpiece power supply 4 is selected as cleaning model, opens multi sphere power supply 5, is passed through reaction gas
Argon gas, enables multi sphere baffle 7, and the gear of multi sphere baffle 7 carries out electronics in 6 front of multi sphere evaporation source, by multi sphere evaporation source 6 to workpiece
Bombardment and cleaning；Control parameter：4 voltage of workpiece power supply is 100V, frequency 5KHz, duty ratio 20%, the electric current of multi sphere power supply 5
50A, bombardment time 25min, Ar volume flow:40SCCM, vacuum degree：0.10Pa, temperature：150℃；
(3) icon bombardment cleaning：Workpiece power supply 4 is selected as depositional model, and multi sphere baffle is in the shape for blocking multi sphere evaporation source
State, open multi sphere power supply, open impressed current anode power supply, multi sphere evaporation source generate electronics promote Ar ionization, Ar+ to workpiece into
Capable Bombardment and cleaning again；Control parameter：4 voltage of workpiece power supply be 150V, frequency 5KHz, duty ratio 40%, impressed current anode
Voltage is 200V, the electric current 50A of multi sphere power supply 5, bombardment time 25min, Ar volume flow:80SCCM, vacuum degree：0.20Pa,
Temperature：150℃；
(4) bottom is deposited：Workpiece power supply 4 is selected as depositional model, is passed through argon working gas, closes multi sphere evaporation source 6, will
The target baffle 20 of 15 front of magnetic controlled sputtering target is opened, and deposition bottom is carried out to workpiece using two chromium targets；Control parameter：Magnetic control
Sputtering target 15 electric current 25A, the voltage 120V of workpiece power supply 4, duty ratio：50%, frequency：40KHZ, time 30min, Ar volume flows
Amount:120SCCM, vacuum degree：0.38Pa, temperature：150℃；
(5) transition zone is deposited：Workpiece power supply 4 is selected as depositional model, is passed through argon working gas and reaction gas C2H2, close
Multi sphere evaporation source 6 is closed, the target baffle 20 of 15 front of magnetic controlled sputtering target is opened, workpiece deposited using two chromium targets
Cross layer；Control parameter：Target 15 electric current 28A, the voltage 180V of workpiece bias power supply 4, duty ratio：50%, frequency：40KHZ, when
Between 30min, Ar volume flows:100SCCM, vacuum degree：0.37-0.42Pa, temperature：150℃；
(6) depositing diamond-like carbon film：Target is arranged in 15 front of magnetic controlled sputtering target in the power supply for closing magnetic controlled sputtering target 15
Baffle 20, workpiece power supply 4 are selected as depositional model, are passed through argon working gas (Ar) and reaction gas acetylene, open multi sphere evaporation
Source 6 simultaneously enables multi sphere baffle 7, starts impressed current anode 8, in workpiece surface depositing diamond-like carbon film；Control parameter：Workpiece power supply
4 voltage -800V, duty ratio：50%, frequency：60KHZ, time 120min, Ar volume flows:100SCCM, acetylene volume flow
Amount：400SCCM, vacuum degree：1.5Pa, temperature：150 DEG C, the electric current 50A of multi sphere evaporation source 6,8 voltage of impressed current anode：100V.
(7) workpiece of depositing diamond-like carbon film is detected, detection data is as follows：(a) appearance and test：Outer sightseeing
Sliding fine and smooth, high smooth surface is kept substantially, color L=42.03, a=-0.07, b=-2.65, and each face color is uniform；(b) nanometer is hard
Degree：2300nHV, film thickness 3.6um, wherein diamond-like carbon film film layer (DLC) thickness are 2.5um；(c) workpiece diamond-like carbon film
Film layer wear-resisting property (CS-17) >=10000 encloses, and is led to by neutral salt spray standard testing by hot dipping (300 DEG C) standard testing
Cross artificial perspiration's standard testing.
Correction data：Multi sphere evaporation source and multi sphere baffle are could be used without, and is not provided with the filming equipment pair of impressed current anode
Workpiece carries out depositing diamond-like carbon film, and the diamond-like carbon film film layer (DLC) deposited under identical workpiece and control parameter is thick
Degree is 0.5um.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the present invention in any form；It is all
The those of ordinary skill of the industry can be shown in by specification attached drawing and described above and swimmingly implement the present invention；But it is all
Those skilled in the art without departing from the scope of the present invention, using disclosed above technology contents
The equivalent variations for a little variation, modification and evolution made are the equivalent embodiment of the present invention；Meanwhile it is all according to the present invention
Substantial technological to the variation, modification and evolution etc. of any equivalent variations made by above example, still fall within the present invention's
Within the protection domain of technical solution.
Claims (10)
1. a kind of strong glow discharge deposition diamond-like-carbon film device, it is characterised in that：The strong glow discharge deposition diamond-like
Stone carbon film equipment includes vacuum cavity, vacuum suction device, reaction gas control and distributor, multi sphere power supply；The vacuum
Vacuum orifice, workpiece rotating frame, multi sphere evaporation source, magnetic controlled sputtering target, several heating tubes, several gas distribution tubes are equipped in cavity；
The vacuum orifice is set to the vacuum cavity one side, and the workpiece rotating frame is set to the middle area of the vacuum cavity
Domain, the heating tube and gas distribution tube are evenly arranged in workpiece rotating frame both sides；The multi sphere evaporation source is set to vacuum cavity
Side, the magnetic controlled sputtering target are set to the another side opposite with multi sphere evaporation source；The front end of the multi sphere evaporation source is arranged
There is the multi sphere baffle of flexible connection.
2. strong glow discharge deposition diamond-like-carbon film device according to claim 1, it is characterised in that：The workpiece turns
Several work hangers for placing workpiece are arranged in frame, and the workpiece rotating frame, work hanger and workpiece are nonisulated between each other
Connection.
3. strong glow discharge deposition diamond-like-carbon film device according to claim 1, it is characterised in that：The strong aura
Discharge depositing diamond-like-carbon film device is additionally provided with workpiece power supply unit, and the workpiece power supply unit includes workpiece power supply and power supply
Mode selector switch group；The workpiece power supply switches switching group by the electric source modes and switches over cleaning model or deposition mould
Formula.
4. strong glow discharge deposition diamond-like-carbon film device according to claim 3, it is characterised in that：The power supply mould
It includes negative switch, the first earthing switch, positive switch, the second earthing switch that formula, which switches switching group,；Described negative switch one end
It is electrically connected with the workpiece, the other end is connect with the cathode of the workpiece power supply；First earthing switch one end with it is described
The cathode of workpiece power supply connects, other end ground connection；Described positive switch one end and the workpiece are electrically connected, the other end with it is described
The anode connection of workpiece power supply；Second earthing switch one end is connect with the anode of the workpiece power supply, other end ground connection.
5. strong glow discharge deposition diamond-like-carbon film device according to claim 1, it is characterised in that：The strong aura
Discharge depositing diamond-like-carbon film device includes an impressed current anode system；The impressed current anode system includes setting impressed current anode electricity
Source and impressed current anode；The impressed current anode power supply is set to outside vacuum cavity, and the impressed current anode is set to the vacuum
In cavity, the impressed current anode is connect by impressed current anode power cord with impressed current anode positive pole, and the impressed current anode is by true
Vacuum cavity is stretched into down at the top of cavity body.
6. strong glow discharge deposition diamond-like-carbon film device according to claim 5, it is characterised in that：The auxiliary sun
Pole includes shell, power cord protection pipe, cooling water inlet pipe, cooling water outlet pipe, insulation vacuum sealing device；The shell is
Cylindrical shell with inner cavity, the upper end of the shell at the top of insulate vacuum sealing device and the vacuum cavity by connecting
It connects；The power cord protection pipe connects the anode casing；The cooling water inlet pipe is stretched into described by the top of the shell
The bottom of the inner cavity of shell, the cooling water outlet pipe are set to the top of the shell.
7. strong glow discharge deposition diamond-like-carbon film device according to claim 1, it is characterised in that：The magnetic control splashes
Front end of shooting at the target is provided with the target baffle of flexible connection.
8. a kind of method of strong glow discharge deposition diamond-like carbon film, it is characterised in that：This method comprises the following steps：
S1, it is put into vacuum cavity after cleaning workpiece；
S2, vacuum cavity is vacuumized and is heated, workpiece is toasted；
S3, it is passed through working gas in vacuum cavity, keeps the workpiece on workpiece rotating frame positively charged, multi sphere baffle, which is in, blocks multi sphere steaming
The state to rise, opens multi sphere power supply, and the electronics that multi sphere evaporation source generates carries out bombardment heating cleaning to workpiece；
S4, keep the workpiece on workpiece rotating frame negatively charged, working gas is passed through in vacuum cavity, open impressed current anode power supply, multi sphere
Baffle is in the state for blocking multi sphere evaporation source, opens multi sphere power supply, and the electronics that multi sphere evaporation source generates promotes working gas
Ionization, working gas cation carry out Bombardment and cleaning again to workpiece；
S5, keep the workpiece on workpiece rotating frame negatively charged, working gas is passed through in vacuum cavity, multi sphere baffle, which is in, blocks multi sphere steaming
The state to rise closes multi sphere power supply, and target baffle is opened, and starts and deposits bottom in workpiece surface using magnetic controlled sputtering target；
S6, keep the workpiece on workpiece rotating frame negatively charged, close multi sphere power supply, multi sphere baffle is in the shape for blocking multi sphere evaporation source
State is passed through working gas and reaction gas, using magnetic controlled sputtering target in workpiece surface reactive deposition transition zone；
S7, impressed current anode power supply is opened, closes magnetic controlled sputtering target, target baffle blocks magnetic controlled sputtering target, makes on workpiece rotating frame
Workpiece is negatively charged, is passed through working gas and reaction gas, and multi sphere baffle is in the state for blocking multi sphere evaporation source, opens multi sphere electricity
Source, using reaction gas in workpiece surface depositing diamond-like carbon film.
9. the method for strong glow discharge deposition diamond-like carbon film according to claim 8, it is characterised in that：The auxiliary
The voltage of anode is 20-200V.
10. the method for strong glow discharge deposition diamond-like carbon film according to claim 8, it is characterised in that：It is described auxiliary
The voltage of supporing yang pole is 100V.
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