CN108539001A - A kind of thermoelectric components integrated with heat exchanger - Google Patents

A kind of thermoelectric components integrated with heat exchanger Download PDF

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Publication number
CN108539001A
CN108539001A CN201810461624.1A CN201810461624A CN108539001A CN 108539001 A CN108539001 A CN 108539001A CN 201810461624 A CN201810461624 A CN 201810461624A CN 108539001 A CN108539001 A CN 108539001A
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CN
China
Prior art keywords
heat exchanger
thermoelectric
metal layer
components integrated
heat
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CN201810461624.1A
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Chinese (zh)
Inventor
刘睿恒
吴汀
柏胜强
宋君强
张骐昊
陈立东
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Priority to CN201810461624.1A priority Critical patent/CN108539001A/en
Publication of CN108539001A publication Critical patent/CN108539001A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/854Thermoelectric active materials comprising inorganic compositions comprising only metals

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

At least one heat exchanger that a kind of thermoelectric components integrated with heat exchanger of present invention offer include the thermoelectric unit group being made of multiple thermoelectric elements and are contacted with low-temperature receiver or heat source;The metal layer that the surface of the heat exchanger has ceramic electric insulation coating layer and is formed on the ceramic electric insulation coating layer, one end of the thermoelectric element is directly welded at the surface of the metal layer.

Description

A kind of thermoelectric components integrated with heat exchanger
Technical field
The present invention relates to a kind of thermoelectric components integrated with heat exchanger, belong to technical field of thermoelectric conversion.
Background technology
Thermoelectric generation technology is the technology for directly being converted thermal energy and electric energy using semi-conducting material, is a kind of environment Friendly energy conversion technique has significant advantage in terms of the recycling of waste heat more than industry and waste heat of automotive exhaust gas, right Remaining waste heat utilization is improved, comprehensive utilization rate of energy source is promoted, reduces Fossil fuel consumption, improves environment, weather etc. tool It plays an important role.Thermoelectric generator (TEG), the thermoelectricity device that core component is made of thermoelectric material and high/low temperature termination electrode Part;Correspondingly, thermoelectric heat generation system is simple in structure, can quiescent operation without rotating (transmission) component and work liquid.Restrict heat Photoelectric transformation efficiency mainly has two aspect factors, first, the performance of thermo-electric device itself, including the ZT values of thermoelectric material (determine reason By highest transfer efficiency) and device prepare integrated technology (determining the thermal resistance between thermoelectric material, barrier layer and electrode and resistance); Second is that the temperature difference between higher device temperature end and low-temperature end, the temperature difference is bigger, and transfer efficiency is higher.In practical applications, thermo-electric device with Interface resistance between the contact surface of heat exchanger is affected to the temperature difference at device both ends.Currently, thermo-electric device and heat exchanger it Between generally by applying heat-conducting glue or pad graphite paper, then apply certain pressure mode and be attached.
The operation of above-mentioned connection type is fairly simple, but it is larger to also result in the thermal resistance between thermo-electric device and heat exchanger, Under the conditions of heat source and sink temperature are fixed, the temperature difference at device both ends is reduced, reduces the transfer efficiency of device.Therefore, such as What, which reduces the thermal resistance between thermo-electric device and heat exchanger, becomes the key for improving conversion efficiency of thermoelectric.
Invention content
In view of the above-mentioned problems, the purpose of the present invention is to provide a kind of thermoelectric components integrated with heat exchanger, for reducing Interface resistance between thermo-electric device and heat exchanger improves conversion efficiency of thermoelectric.
On the one hand, the present invention provides a kind of thermoelectric components integrated with heat exchanger, including are made of multiple thermoelectric elements Thermoelectric unit group and at least one heat exchanger for being contacted with low-temperature receiver or heat source;The surface of the heat exchanger has ceramic electrical exhausted Edge coating and the metal layer being formed on the ceramic electric insulation coating layer, one end of the thermoelectric element are directly welded at described The surface of metal layer.
The present invention it is integrated with heat exchanger in heat exchanger and thermoelectric unit there is integrated structure, wherein exchanging heat The ceramic electric insulation coating layer of metallization is distributed in the side that device is contacted with thermoelectric element, which has and thermoelectricity Element metallic layer can be directly welded on metal layer to one end of thermoelectric element, can reduce between thermo-electric device and heat exchanger Interface resistance improves transfer efficiency.
Preferably, being that surface is distributed reeded metal layer by the metal layer, one end of the thermoelectric element is directly welded Be connected on the metal layer is not distributed reeded surface;Preferably, by the metal layer by corroding or etching formation and heat Electric device is distributed corresponding groove.Wherein, it refers to the metal electrode layer for having specific pattern that surface, which is distributed fluted, to be formed Certain electric pathway.
Preferably, at least one heat exchanger includes the First Heat Exchanger being connect with heat source and connect with low-temperature receiver Two heat exchangers, wherein one end of the thermoelectric element is welded on the layer on surface of metal of First Heat Exchanger, the thermoelectric element it is another One end is welded on the surface of the metal layer of the second heat exchanger.
Preferably, the material of the ceramics electric insulation coating layer is high heat conduction electrically insulating material, preferably aluminium oxide, oxidation At least one of zirconium, yttrium oxide, silicon nitride, aluminium nitride, beryllium oxide, silicon carbide and chromium oxide.
Preferably, the thickness of the ceramics electric insulation coating layer is 0.001~0.5mm.Ceramic painting can be realized in the range The insulation performance of layer, the not breakdown short circuit in thermo-electric device operating voltage range, while there is relatively good heat-conducting effect.
Preferably, the thickness of the metal layer is 0.05~5mm, the conduction that can meet metal electrode in the range is wanted It asks;Preferably, the material of the metal layer is at least one of Cu, Ni, Al, Cr, W, Au, Sn, Mo, Mn.
Preferably, the material of the thermoelectric element is in bismuth telluride, skutterudite, half heusler alloy, lead telluride and SiGe At least one.
Preferably, the material of the heat exchanger is metal material or ceramic material.
Preferably, the medium for carrying out heat exchange with the heat exchanger is gas or liquid.
Preferably, the thermoelectric element is P-N type thermoelectric elements.
By the above method, the integrated of heat exchanger and thermoelectric unit is realized.The present invention can reduce thermo-electric device with Interface resistance between heat exchanger improves conversion efficiency of thermoelectric under the conditions of low-temperature receiver and fixed heat source temperature;It also allows for simultaneously For the thermoelectric components of different system development module, the integrated level and reliability of system are improved.
Description of the drawings
Fig. 1 is the overall schematic of the thermoelectric components integrated with heat exchanger of the present invention;
Fig. 2 is the schematic cross-sectional view of the thermoelectric components integrated with heat exchanger of the present invention;
Fig. 3 be in embodiment 1 with the integrated bismuth telluride thermoelectric components of heat exchanger and traditional bismuth telluride device power test comparison;
Fig. 4 be embodiment 2 and embodiment 3 prepare with the integrated skutterudite thermoelectric component of heat exchanger and traditional skutterudite device Power test compares;
Reference numeral:
1 thermoelectric unit;
2 heat exchangers;
3 high heat conduction electric insulation ceramics coatings;
4 metal layers.
Specific implementation mode
It is further illustrated the present invention below by way of following embodiments, it should be appreciated that following embodiments are merely to illustrate this Invention, is not intended to limit the present invention.
Interface resistance between thermo-electric device and heat exchanger is reduced to realize, improves the purpose of conversion efficiency of thermoelectric, the present invention A kind of thermoelectric components integrated with heat exchanger are provided, structure is as shown in Fig. 2, include:At least one thermoelectric element 1, with it is described The side of heat exchanger 2, the heat exchanger towards the thermoelectric element that thermoelectric element 1 is connected is provided with ceramic metallization electricity absolutely Edge coating 3 (high heat conduction electric insulation ceramics coating), 3 surface of metallization electric insulation coating layer have metal layer 4.Preferably, metal layer 4 Corresponding groove structure is distributed to which thermoelectric element is directly welded at the metal layer through corroding or etching formation and thermoelectric element It is not distributed reeded surface.Wherein, the heat exchanger 2 may include being connected with the cold and hot end of the thermoelectric element respectively Cool end heat exchanger (First Heat Exchanger) or/and hot end heat exchanger (First Heat Exchanger).When heat exchanger 2 include cool end heat exchanger and When hot end heat exchanger, structure can be as shown in Figure 1, including heat exchanger 2 (including cool end heat exchanger and hot end heat exchanger) and multiple Thermoelectric unit 1.There is the one side contacted with thermoelectric unit for being distributed in cool end heat exchanger or hot end heat exchanger ceramics electrical isolation to apply 3 (high heat conduction electric insulation ceramics coating) of layer.The ceramics electric insulation coating layer surface metallized, etched recesses structure, is obtained Metal layer 4 for being welded with thermoelectric element.Preferably, the thickness of metal layer groove is identical as metal layer, i.e. engraved structure Metal layer (wherein, metal groove refers to the metal electrode layer using certain pattern).Wherein, thermoelectric element can be P-N type thermoelectricity Element (the π types device based on P-N materials).In alternative embodiments, when heat exchanger includes that cool end heat exchanger and hot junction are changed When hot device, also can the only described cool end heat exchanger or hot end heat exchanger be distributed between thermoelectric element ceramic electric insulation coating layer and Metal layer.
In alternative embodiments, the material of heat exchanger 2 can be metal material, can also be ceramic material.Wherein, Metal material can be aluminium, copper, Cr, W, Au, Sn, Mo, Mn etc., and ceramic material is aluminium oxide, zirconium oxide, yttrium oxide, silicon nitride, nitrogen Change aluminium, beryllium oxide, silicon carbide and chromium oxide etc..Heat exchanger 2 is contacted with heat source, low-temperature receiver respectively, and heat exchange is carried out with heat exchanger Medium can be gas or liquid.Wherein, gas can be nitrogen, helium, xenon, air etc., and liquid is water, oil, alcohol, first Aldehyde etc..
In alternative embodiments, the material of ceramic electric insulation coating layer 3 can be aluminium oxide (Al2O3), zirconium oxide (ZrO2), yttrium oxide (Y2O3), silicon nitride (Si3N4), aluminium nitride (AlN), silicon carbide (SiC) and chromium oxide (Cr2O3) etc..To pottery 3 surface of porcelain electric insulation coating layer is metallized, and metal layer is obtained.Wherein, the technique of metallization can be chemical-electrical plating method, thick film Print process, direct key be legal, hot spray process, laser cladding.In alternative embodiments, the material of metal layer can be Cu, Ni, Al, Cr, W, Au, Sn, Mo or Mn etc..
In alternative embodiments, metal layer is formed into figure by corroding or etching, thermoelectric unit is directly welded at In corresponding metal layer image.As an example, using techniques such as wet etching, dry etching or plasma etchings to metal Layer is corroded or is etched, and forms patterned metal layer, thermoelectric unit 1 is directly welded on the figure of corresponding metal layer.
When thermoelectric components integrated with heat exchanger work, heat exchanger 2 contacts progress heat with external heat source, low-temperature receiver respectively It exchanges, heat forms the temperature difference by heat exchanger 2, ceramic electric insulation coating layer 3 and metal layer 4, at the both ends of thermoelectric unit 1, realizes Heat to electricity conversion.The present invention can effectively reduce interface resistance between thermo-electric device and heat exchanger, improve transfer efficiency;Simultaneously also just In the thermoelectric components for different system development module, the integrated level and reliability of system are improved.
Embodiment is enumerated further below so that the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair Some nonessential modifications and adaptations that bright the above is made all belong to the scope of protection of the present invention.Following examples are specific Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper In the range of select, and do not really want to be defined in hereafter exemplary concrete numerical value.
Embodiment 1
The material of heat exchanger 2 (including cool end heat exchanger and hot end heat exchanger) is metallic copper;Heat exchanger 2 carries out heat with cold and heat source The medium of exchange is air.Ceramic electric insulation coating layer 3 on heat exchanger is all aluminium nitride (AlN), thickness be respectively 0.1mm, 0.1mm.Ceramic electric insulation coating layer surface metal-layer is copper (Cu), realizes that the metallization of copper conductive layer, thickness are respectively using plating 0.3mm、0.3mm.Figure is formed by wet etching on metal layer, the material of thermoelectric unit is bismuth telluride, low-temperature receiver, heat source temperature 30 DEG C and 220 DEG C respectively.Test comparison, traditional bismuth telluride device and heat exchanger are carried out with traditional bismuth telluride device of same size It is attached using heat-conducting glue and carbon paper (thickness is respectively 0.1mm, 0.1mm) between (material is also metallic copper), result is such as Shown in Fig. 3, under conditions of identical low-temperature receiver, heat source, its generated output is significantly greater than biography with the integrated thermoelectric components of heat exchanger System bismuth telluride device.
Embodiment 2
The material of heat exchanger 2 (including cool end heat exchanger and hot end heat exchanger) is metallic aluminium;Heat exchanger 2 carries out heat with cold and heat source The medium of exchange is water.Ceramic electric insulation coating layer 3 on cool end heat exchanger and hot end heat exchanger is all aluminium oxide (Al2O3), it is thick Degree is respectively 0.05mm, 0.05mm.Ceramic electric insulation coating layer surface metal-layer is molybdenum (Mo), is metallized using hot spray process, thick Degree is respectively 0.1mm, 0.1mm.By plasma etching at figure (referring to Fig. 2), the material side of being of thermoelectric unit on metal layer Cobalt ore, low-temperature receiver, heat source temperature distinguish 45 DEG C and 530 DEG C.Test comparison is carried out with the traditional structure skutterudite device of same size, Carbon paper is used between traditional structure skutterudite device and heat exchanger (material is also metallic aluminium) (thickness is respectively 0.1mm, 0.1mm) It is attached, the results are shown in Figure 4, under conditions of identical low-temperature receiver, heat source, with its hair of the integrated thermoelectric components of heat exchanger Electrical power is significantly greater than traditional structure skutterudite device.
Embodiment 3
The material of heat exchanger 2 (including cool end heat exchanger and hot end heat exchanger) is metallic aluminium;Heat exchanger 2 carries out heat with cold and heat source The medium of exchange is ethyl alcohol.Ceramic electric insulation coating layer 3 on cool end heat exchanger and hot end heat exchanger is all aluminium oxide (Al2O3), Thickness is respectively 0.2mm, 0.2mm.Ceramic electric insulation coating layer surface metal-layer is molybdenum (Mo), is metallized using hot spray process, thick Degree is respectively 0.5mm, 0.5mm.The material of thermoelectric unit is skutterudite, and low-temperature receiver, heat source temperature distinguish 45 DEG C and 530 DEG C.With phase The traditional structure skutterudite device of same specification carries out test comparison, and (material is also gold to traditional structure skutterudite device with heat exchanger Belong to aluminium, including cool end heat exchanger and hot end heat exchanger) between be attached using carbon paper (thickness is respectively 0.1mm, 0.1mm), The results are shown in Figure 4 for it, and under conditions of identical low-temperature receiver, heat source, its generated output is big with the integrated thermoelectric components of heat exchanger In traditional structure skutterudite device.

Claims (10)

1. a kind of thermoelectric components integrated with heat exchanger, which is characterized in that include the thermoelectric unit being made of multiple thermoelectric elements Group and at least one heat exchanger contacted with low-temperature receiver or heat source;The surface of the heat exchanger have ceramic electric insulation coating layer and The metal layer being formed on the ceramic electric insulation coating layer, one end of the thermoelectric element is directly welded at the table of the metal layer Face.
2. thermoelectric components integrated with heat exchanger according to claim 1, which is characterized in that the metal layer is surface point The metal layer having a groove, what one end of the thermoelectric element was directly welded at the metal layer is not distributed reeded surface; Preferably, by the metal layer by corroding or etching formation groove corresponding with thermoelectric element distribution.
3. thermoelectric components integrated with heat exchanger according to claim 1 or 2, which is characterized in that described at least one to change Hot device includes the First Heat Exchanger being connect with heat source and the second heat exchanger being connect with low-temperature receiver, wherein the one of the thermoelectric element End is welded on the surface of the metal layer of First Heat Exchanger, and the other end of the thermoelectric element is welded on the metal layer of the second heat exchanger Surface.
4. thermoelectric components integrated with heat exchanger according to any one of claim 1-3, which is characterized in that the ceramics The material of electric insulation coating layer is in aluminium oxide, zirconium oxide, yttrium oxide, beryllium oxide, silicon nitride, aluminium nitride, silicon carbide and chromium oxide At least one.
5. the thermoelectric components integrated with heat exchanger according to any one of claim 1-4, which is characterized in that the ceramics The thickness of electric insulation coating layer is 0.001~0.5mm.
6. thermoelectric components integrated with heat exchanger according to any one of claims 1-5, which is characterized in that the metal The thickness of layer is 0.05~5mm;Preferably, the material of the metal layer be Cu, Ni, Al, Cr, W, Au, Sn, Mo, Mn in extremely Few one kind.
7. the thermoelectric components integrated with heat exchanger according to any one of claim 1-6, which is characterized in that the thermoelectricity The material of element is at least one of bismuth telluride, skutterudite, half heusler alloy, lead telluride and SiGe.
8. the thermoelectric components integrated with heat exchanger according to any one of claim 1-7, which is characterized in that the heat exchange The material of device is metal material or ceramic material.
9. the thermoelectric components integrated with heat exchanger according to any one of claim 1-8, which is characterized in that changed with described The medium that hot device carries out heat exchange is gas or liquid.
10. the thermoelectric components integrated with heat exchanger according to any one of claim 1-9, which is characterized in that the heat Electric device is P-N type thermoelectric elements.
CN201810461624.1A 2018-05-15 2018-05-15 A kind of thermoelectric components integrated with heat exchanger Pending CN108539001A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111463341A (en) * 2019-01-21 2020-07-28 中国科学院上海硅酸盐研究所 Low-contact-resistivity half-heusler alloy thermoelectric device and preparation method thereof
CN113594345A (en) * 2021-06-23 2021-11-02 华为技术有限公司 Thermoelectric submodule, thermoelectric device and wearable equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101040392A (en) * 2004-11-02 2007-09-19 昭和电工株式会社 Thermoelectric conversion module, thermoelectric power generating apparatus and method using same
CN104465978A (en) * 2014-12-13 2015-03-25 广东富信科技股份有限公司 Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101040392A (en) * 2004-11-02 2007-09-19 昭和电工株式会社 Thermoelectric conversion module, thermoelectric power generating apparatus and method using same
CN104465978A (en) * 2014-12-13 2015-03-25 广东富信科技股份有限公司 Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111463341A (en) * 2019-01-21 2020-07-28 中国科学院上海硅酸盐研究所 Low-contact-resistivity half-heusler alloy thermoelectric device and preparation method thereof
CN111463341B (en) * 2019-01-21 2022-04-08 中国科学院上海硅酸盐研究所 Low-contact-resistivity half-heusler alloy thermoelectric device and preparation method thereof
CN113594345A (en) * 2021-06-23 2021-11-02 华为技术有限公司 Thermoelectric submodule, thermoelectric device and wearable equipment

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Application publication date: 20180914