CN104465978A - Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof - Google Patents
Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof Download PDFInfo
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- CN104465978A CN104465978A CN201410761592.9A CN201410761592A CN104465978A CN 104465978 A CN104465978 A CN 104465978A CN 201410761592 A CN201410761592 A CN 201410761592A CN 104465978 A CN104465978 A CN 104465978A
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Abstract
The invention discloses a composite thermoelectricity chip. The composite thermoelectricity chip comprises a cold-end ceramic plate, a hot-end ceramic plate, an N-type galvanic couple pair, a P-type galvanic couple pair and a guide strip. A metal layer is arranged on the outer surface of a substrate of the hot-end ceramic plate. Due to the fact that the metal layer is additionally arranged on the outer surface of the TEC hot-end ceramic substrate, the TEC hot-end ceramic substrate and a hot-end heat exchanger can be welded, and the contact heat resistance between the TEC hot-end ceramic substrate and the hot-end heat exchanger can be much smaller than that of a face-face attachment method depending on compression through mechanical force; especially for working conditions with high power and high heating flux, the heat dissipation effect of a TEC hot-end in a new structure is obviously improved, and therefore a TEC can achieve high-power refrigeration.
Description
Technical field
The present invention relates to thermoelectric cooling technical field, more particularly, relate to a kind of compound thermal electrical chip and hot junction method for manufacture of ceramic plate thereof.
Background technology
Semiconductor heat electrical chip TEC(Thermoelectric cooler) utilize semi-conducting material Peltier (peltier) effect, apply direct current, then can form cool and heat ends at chip two ends, the heat that hot junction produces is dissipated in time, just have certain cold at cold junction and produce.Current TEC is structure is substantially " sandwich " structure, and two ends symmetry cold, hot substrate (are generally Al
2o
3), metal flow guide bar, solder, N-type, P type galvanic couple pair that middle " folder " is made up of semi-conducting material.Because the hot and cold substrate of TEC is ceramic wafer, all adopt with cool and heat ends heat exchanger connected mode that plate-plate is fitted, mechanical force tightening structure, that is: ceramic wafer plane and heat exchanger plane are directly fitted, by screw pulling force between hot and cold heat exchanger, TEC and cold hot end heat exchanger are fitted tightly, fully exchange to strengthen the cold and hot end cold of TEC, heat and cool and heat ends heat exchanger, improve refrigerating capacity and the refrigerating efficiency of TEC, on the one hand, TEC and cold hot end heat exchanger laminating plane will post, and namely both flatnesses are as far as possible high; Two aspects, fill the material of high heat conductance as heat-conducting silicone grease etc. at laminating interplanar, thus make laminating more abundant, reduce the thermal-conduction resistance between TEC and cool and heat ends heat exchanger.TEC is simple, easy to use due to structure, generally applies conversion efficiency, the less demanding occasion of refrigeration work consumption.But along with the raising of TEC refrigeration work consumption and conversion efficiency promote, TEC hot junction quantity of heat production significantly improves (TEC quantity of heat production Q
h=refrigeratory capacity Q
c+ electric input power P
i), density of heat flow rate increases, and make the cold and hot amount serious unbalance of TEC cool and heat ends, namely hot junction quantity of heat production is much larger than cold junction refrigeratory capacity, and therefore, it is unreasonable that existing symmetrical structure TEC exists design, cannot meet efficient TEC and high-power TEC structural requirement.How developing high-power refrigeration TEC, improve TEC refrigerating efficiency, widen TEC application, is current TEC refrigeration problem demanding prompt solution.
Summary of the invention
The technical problem to be solved in the present invention is, provide a kind of compound thermal electrical chip and hot junction method for manufacture of ceramic plate thereof of high-power refrigeration, it can strengthen hot junction heat transfer effect, to overcome the deficiencies in the prior art.
For solving the problems of the technologies described above, structure compound thermal electrical chip, comprise cool and heat ends ceramic wafer, N, P type galvanic couple pair, flow guide bar, the outer surface of substrate of hot junction ceramic wafer arranges metal level.
The all or part of outer surface of substrate carrying out lid hot junction ceramic wafer of described metal level.
Described metal level is layers of copper or copper facing aluminium lamination or molybdenum manganese layer.
The hot junction method for manufacture of ceramic plate of above-mentioned compound thermal electrical chip: all brush on the inside and outside surface of the substrate of hot junction ceramic wafer and enclose copper or copper facing aluminium or molybdenum manganese oar, then metal placement sintering furnace carries out high temperature sintering, thus is formed with the ceramic substrate of two-sided metallization.
The invention has the beneficial effects as follows:
1. because this TEC hot junction ceramic substrate outer surface adds metal level, then between TEC hot junction substrate and hot end heat exchanger, connected mode can adopt welding manner, make the two Contact thermal resistance much smaller than original face, face laminating type compressed by mechanical force, special in high-power, high heat flux operating mode, new construction TEC hot-side heat dissipation effect is obviously promoted, thus makes this TEC can realize high-power refrigeration.
2., because two-sided metallization adopts high-sintering process, two sides metal is combined with ceramic substrate very firmly, and the metal layer thickness newly increased is very little, conductive coefficient far above ceramic wafer, therefore the metal level of increase is very little to TEC hot junction Heat Transfer Influence.Because ceramic wafer adds metallization, intensity, higher than original one side ceramic wafer, reduces the damage that TEC in use causes TEC ceramic wafer, improves TEC rate of finished products.
3. composite semiconductor temperature difference chip structure is that only hot junction ceramic substrate is two-sided metallization, and cold junction substrate is still original structure.Main cause is: when normally working, and TEC hot junction quantity of heat production is 3 ~ 5 times of cold junction refrigeratory capacity, and therefore its hot junction thermal resistance has the greatest impact to TEC refrigeration performance.Secondly, even if by TEC cold junction ceramic wafer also two-sided metallization, because cold junction refrigeratory capacity is little, density of heat flow rate is low, more weak and add cost to TEC performance impact.In addition, TEC cold junction two-sided metallization ceramic substrate, can not weld with cold and hot end heat exchanger surface with TEC hot junction two-sided metallization ceramic substrate simultaneously, otherwise when working, TEC very easily causes TEC to damage due to the stress that variations in temperature produces.Therefore, it is large that TEC composite structural design had both overcome traditional TEC hot junction thermal resistance, the shortcoming that conversion efficiency is low, refrigeration work consumption is little, meanwhile, due to one side displacement, saved cost, improve TEC cost performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of compound thermal electrical chip of the present invention.
Fig. 2 is the A-A cut-away view of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing of the present invention; the specific embodiment of the present invention is described; obviously; described embodiment is only a part of embodiment; based on embodiments of the present invention; other embodiments that those of ordinary skill in the art obtain under the prerequisite of not making creative work, all in protection scope of the present invention.
Current TEC is only limitted to small-power refrigeration main cause and is: large refrigeration work consumption TEC, its hot junction generation heat is many, density of heat flow rate is large, really to can produce larger refrigerating capacity, promote conversion efficiency, then TEC cool and heat ends must carry out sufficient energy exchange by cool and heat ends heat exchanger and cooled object (or cooled space) and heat-dissipating space, and particularly to transmit thermal resistance impact larger for hot junction heat.And current existing TEC cool and heat ends is ceramic substrate, and face-face mechanical compaction laminating type can only be adopted between cool and heat ends heat exchanger, although pass through heat-conducting silicone grease between binding face, reduce contact heat resistance, but owing to limiting by mechanical processing technique, face-face Contact thermal resistance still creates considerable influence to the transmission of TEC heat.For head it off, propose composite semiconductor temperature difference chip TEC.See Fig. 1--2, compound thermal electrical chip 1 of the present invention, comprise cool and heat ends ceramic wafer 3, N, P type galvanic couple to 4, flow guide bar 5, the outer surface of substrate of hot junction ceramic wafer arranges metal level 2.
The all or part of outer surface of substrate carrying out lid hot junction ceramic wafer 3 of described metal level 2.
Described metal level is layers of copper or copper facing aluminium lamination or molybdenum manganese layer.
Compound thermal electrical chip of the present invention changes TEC hot junction ceramic substrate into two-sided metallization structure, that is: metallize on basis at TEC hot junction ceramic wafer one side (with semiconductor particle solder side), metallize at the another side (with hot end heat exchanger binding face) of same ceramic substrate, this metal material is copper, molybdenum manganese alloy, copper facing aluminium etc. simultaneously.Between TEC hot junction substrate and hot end heat exchanger, connected mode can adopt welding manner, make the two Contact thermal resistance much smaller than original face, face laminating type compressed by mechanical force, special in high-power, high heat flux operating mode, new construction TEC hot-side heat dissipation effect is obviously promoted, thus makes this TEC can realize high-power refrigeration.Specific implementation technique: on original one-sided metallic ceramic wafer basis, enclose copper, copper facing aluminium or brush molybdenum manganese oar at another side simultaneously, place sintering furnace more together and carry out high temperature sintering, material is thus formed two-sided metallization ceramic substrate, utilize existing TEC processing technology to complete the manufacture of composite semiconductor temperature difference chip.
From technic relization scheme, outside the two-sided metallization ceramic wafer of hot junction, metal material should meet direct soldered or the rear soldered of process, can be copper coin, copper facing aluminium sheet or molybdenum manganese metal etc.Consider heat transfer property, as far as possible all planar metallised, consider actual process and stress, also can localized metallic.
Claims (4)
1. compound thermal electrical chip, comprises cool and heat ends ceramic wafer, N, P type galvanic couple pair, and flow guide bar, is characterized in that: on the outer surface of substrate of hot junction ceramic wafer, arrange metal level.
2. compound thermal electrical chip according to claim 1, is characterized in that: all or part of outer surface of substrate carrying out lid hot junction ceramic wafer of described metal level.
3. compound thermal electrical chip according to claim 2, is characterized in that: described metal level is layers of copper or copper facing aluminium lamination or molybdenum manganese layer.
4. the hot junction method for manufacture of ceramic plate of compound thermal electrical chip according to claim 1, it is characterized in that: all brush on the inside and outside surface of the substrate of hot junction ceramic wafer and enclose copper or copper facing aluminium or molybdenum manganese oar, then metal placement sintering furnace carries out high temperature sintering, thus is formed with the ceramic substrate of two-sided metallization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410761592.9A CN104465978A (en) | 2014-12-13 | 2014-12-13 | Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410761592.9A CN104465978A (en) | 2014-12-13 | 2014-12-13 | Composite thermoelectricity chip and hot-end ceramic plate manufacturing method thereof |
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|---|---|
| CN104465978A true CN104465978A (en) | 2015-03-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539001A (en) * | 2018-05-15 | 2018-09-14 | 中国科学院上海硅酸盐研究所 | A kind of thermoelectric components integrated with heat exchanger |
| CN113257758A (en) * | 2021-05-11 | 2021-08-13 | 上海空间电源研究所 | Novel high-temperature area thermoelectric device integrated module |
-
2014
- 2014-12-13 CN CN201410761592.9A patent/CN104465978A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539001A (en) * | 2018-05-15 | 2018-09-14 | 中国科学院上海硅酸盐研究所 | A kind of thermoelectric components integrated with heat exchanger |
| CN113257758A (en) * | 2021-05-11 | 2021-08-13 | 上海空间电源研究所 | Novel high-temperature area thermoelectric device integrated module |
| CN113257758B (en) * | 2021-05-11 | 2022-06-28 | 上海空间电源研究所 | Novel thermoelectric device integrated module for high temperature area |
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Application publication date: 20150325 |