CN201007993Y - Insulation type high-power triode - Google Patents
Insulation type high-power triode Download PDFInfo
- Publication number
- CN201007993Y CN201007993Y CN 200620107733 CN200620107733U CN201007993Y CN 201007993 Y CN201007993 Y CN 201007993Y CN 200620107733 CN200620107733 CN 200620107733 CN 200620107733 U CN200620107733 U CN 200620107733U CN 201007993 Y CN201007993 Y CN 201007993Y
- Authority
- CN
- China
- Prior art keywords
- chip
- large power
- insulation type
- heat sink
- type large
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to an insulation type large power transistor, which comprises a chip, a bottom board, a plurality of pins melded on the chip and a connecting thread between the pins, wherein the chip is fixed on a thermal sink, the thermal sink is provided with a heating transmission and insulation electron pottery plate between the bottom board, the electron pottery plate is employed with one of the following: SiO2, aluminum nitride, aluminum oxide, silicon carbide, mullet or beryllium, the electron pottery plate is printed with metal coat on two faces, the thermal sink is directly melded with one pin of the transistor, the other pins of the transistor are connected with the chip by connecting thread. The utility model provides a structure separating the collecting electrode from the heating bottom board, which not only guarantees insulation but also guarantees heat swift transmission of insulation large power transistor.
Description
Technical field
The present invention relates to a kind of semiconductor device, especially relate to a kind of insulation type large power triode.
Background technology
Because the high power transistor caloric value is bigger, and the quality of radiating effect can directly influence the stability of transistor and equipment, so heat dissipation technology just seems particularly important.At present, the collector electrode of domestic normal transistor is exactly its heat-radiating substrate, and promptly collector electrode and heat-radiating substrate communicate.In use need to adopt insulation measures that the transistor AND gate radiator is separated.Usually after covering heat-conducting silicone grease with mica sheet or mylar, be mounted between power device and the radiator.This insulation measures will cause thermal resistance to increase substantially, and actual dissipation power reduces, reliability decrease.Particularly to some abominable environments for use: such as high temperature, high humidity, high dust, ultralow temperature, and require highly reliable, move in the operational environment continuously, aspect military project, common triode obviously is not suitable selection especially.In addition, this insulating means easily produces the faults such as not good and short circuit that insulate of leaking electricity, and is less demanding to the fineness of spreader surface and device installed surface simultaneously.
Summary of the invention
One of goal of the invention of the present utility model is the above deficiency at prior art, provides a kind of collector electrode and heat-radiating substrate are separated, and has both guaranteed electric insulation, has guaranteed the insulation type large power triode of the quick conduction of heat again.
Goal of the invention of the present utility model is solved by following technical proposals: a kind of insulation type large power triode, comprise the lead-in wire between chip, heat sink, base plate, pin and chip and the pin, apply hot silicone grease on the described chip installed surface, directly be mounted on heat sink on, be provided with the electronic ceramic sheet of heat conduction and insulation between the heat sink and base plate, heat sink being welded on this heat conductive insulating electroceramics sheet, heat conductive insulating electroceramics sheet is welded on the base plate; The transistorized pin of direct spot welding on heat sink, pin links to each other with chip by aluminium wire.The chip installed surface be covered with heat-conducting silicone grease be affixed on heat sink on, thermal resistance will be installed reduce to minimumly, to greatest extent, improved the actual dissipation power of device, also bring great convenience simultaneously to mounting process.
As the further improvement of such scheme, described electronic ceramic sheet adopts a kind of in silicon dioxide, aluminium nitride, aluminium oxide, carborundum, mullite or the beryllium oxide.Structurally adopt the electronic ceramic of one deck high thermal conductivity, collector electrode and heat-radiating substrate have been separated, both guaranteed electric insulation, guaranteed the quick conduction of heat again.
As the further improvement of such scheme, the two-sided coated metal layer of described electronic ceramic sheet, the electronic ceramic sheet, the metal level of the two-sided coating of described electronic ceramic sheet adopts nickel, mercury, cerium, zinc, gold or nickel mercury.
As the further improvement of such scheme, it is characterized in that the two-sided coated metal layer of described electronic ceramic sheet; The thickness that the single face of electronic ceramic sheet is coated with nickel coating is 5～20 microns.
As the further improvement of such scheme, the thickness of described electronic ceramic sheet is 100～300 microns.
The utility model has the advantages that modern design, compact conformation, electric current linearity consume, noise is low, dissipation power is big, thermal resistance is little.Especially pipe is except adopting the low noise technology on manufacturing process, and its radiator structure is original and different, has adopted electronic ceramic to make the insulating heat-conductive layer on the structure, the thermal conductivity height, and it collects point pole---breakdown strength＞1000V between base stage.Be installed on the radiator of same surface area, thermal resistance is lower by 20% than mica-sheet insulation situation, actual dissipation power ratio like product height.
Description of drawings
Accompanying drawing 2 is internal structure end views of insulation type large power triode.
Embodiment
Below by embodiment, and in conjunction with the accompanying drawings, technical scheme of the present invention is described in further detail.
By Fig. 1 and Fig. 2 as can be known, the utility model comprises the lead-in wire 7 between chip 1, heat sink 3, base plate 2, pin 6 and chip and the pin, and this chip 1 can adopt bipolar transistor, field-effect transistor, Schottky diode chip.During actual the use, after will covering heat-conducting silicone grease on the installed surface of pipe, directly be mounted on heat sink 3.Heat sink 3 can adopt copper, aluminium or alloy, heat sink 3 and base plate 2 between be provided with an electronic ceramic sheet 4, thickness is at 100～300 microns, electronic ceramic sheet 4 two-sided coated metal layers, the thickness that single face is coated with nickel coating is 5～20 microns.Heat sink 3 are welded on the electronic ceramic sheet 4, and electronic ceramic sheet 4 is welded on the base plate 2.Pin 6 of direct spot welding on heat sink 3, pin 6 links to each other with chip by lead-in wire, realizes the function of drawing of electrode.
This electronic ceramic sheet 4 is the electronic ceramic 4 of high thermal conductivity.Collector electrode and heat-radiating substrate are separated, both guaranteed electric insulation, guaranteed the quick conduction of heat again.Owing to adopted interior insulation technology, thermal resistance will be installed reduce to minimum, to greatest extent.Improved the actual dissipation power of device greatly.Bring great convenience to mounting process simultaneously.
When triode was worked, the heat that chip 1 produces was absorbed rapidly by heat sink 3, and draws planar diffusion and come, and heat passes on the base plate 2 by heat sink 3 then, spreads on base plate 2 planes and comes, and is dispersed into the external world at last and goes.
Claims (6)
1. insulation type large power triode, comprise the lead-in wire between chip, heat sink, base plate, pin and chip and the pin, it is characterized in that applying on chip (1) installed surface hot silicone grease, directly be mounted on heat sink (3), be provided with heat conductive isolation sheet (4) between heat sink (3) and the base plate (2), heat sink (3) are connected on this heat conductive insulating electroceramics sheet (4), and heat conductive insulating electroceramics sheet (4) is connected on the base plate (2); Go up the transistorized pin of direct spot welding (6) in heat sink (3), pin (6) links to each other with chip (1) by aluminium wire (7).
2. a kind of insulation type large power triode according to claim 1 is characterized in that the electronic ceramic sheet (4) that described heat conductive isolation sheet (4) selects for use high thermal conductivity to insulate.
3. insulation type large power triode according to claim 2 is characterized in that two-sided being coated with of described electronic ceramic sheet (4) is coated with metal level.
4. a kind of insulation type large power triode according to claim 3 is characterized in that the metal level of the two-sided coating of described electronic ceramic sheet (4) adopts nickel, mercury, cerium, zinc, gold or nickel mercury.
5. according to claim 2 or 3 or 4 described a kind of insulation type large power triodes, the thickness that the single face that it is characterized in that described electronic ceramic sheet (4) is coated with nickel coating is 5～20 microns.
6. a kind of insulation type large power triode according to claim 1, the thickness that it is characterized in that described electronic ceramic sheet (4) is 100～300 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620107733 CN201007993Y (en) | 2006-09-15 | 2006-09-15 | Insulation type high-power triode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620107733 CN201007993Y (en) | 2006-09-15 | 2006-09-15 | Insulation type high-power triode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201007993Y true CN201007993Y (en) | 2008-01-16 |
Family
ID=39003943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620107733 Expired - Fee Related CN201007993Y (en) | 2006-09-15 | 2006-09-15 | Insulation type high-power triode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201007993Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10032690B2 (en) | 2015-02-24 | 2018-07-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor structure including a thermally conductive, electrically insulating layer |
-
2006
- 2006-09-15 CN CN 200620107733 patent/CN201007993Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10032690B2 (en) | 2015-02-24 | 2018-07-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor structure including a thermally conductive, electrically insulating layer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |