CN108526627A - A kind of semi-conducting material laser electrochemical copolymerization micro-processing method and device - Google Patents
A kind of semi-conducting material laser electrochemical copolymerization micro-processing method and device Download PDFInfo
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- CN108526627A CN108526627A CN201810674637.7A CN201810674637A CN108526627A CN 108526627 A CN108526627 A CN 108526627A CN 201810674637 A CN201810674637 A CN 201810674637A CN 108526627 A CN108526627 A CN 108526627A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
Abstract
The invention discloses a kind of semi-conducting material laser electrochemical copolymerization micro-processing method and devices, belong to special process field, this method is the characteristic for being increased and being significantly increased with temperature using the semi-conducting materials such as monocrystalline silicon conductivity, by laser beam heats semi-conducting material, localization enhances machining area materials conductive performance nearby, formed an electric current preferentially by conductive channel, Electrolyzed Processing is introduced in the form of electro-hydraulic beam to bias on this basis, realize laser electrochemistry " from coupling " Compound Machining near machining area, without " to knife ", not only ensure to adhere to without surface residual debris in laser processing procedure, cooling effect can also be strengthened, reach and reduces thermal damage, reduce residual stress, improve the purpose of machined surface quality；The device includes laser, external circuits, electrolysis power, stablizes jet flow generating device；Its device produces stabilizing low voltage electrolyte jet stream, and realizes that angle of attack is adjusted with position, it is ensured that realizes that laser beam is accurately adjusted with impact jet flow relative position.
Description
Technical field
The present invention relates to the small seam of the processing in special process field, hole, the isostructural processing method of slot and devices, especially
It is related to a kind of laser electrolysis Compound Machining realized to the sensitivity characteristic of temperature using the semi-conducting materials conductivity such as monocrystalline silicon
Method and device.
Background technology
There are good structure attribute and functional attributes as the semi-conducting material of representative using silicon and germanium, is widely used in core
The fields such as piece, photovoltaic, medical instrument, MEMS.The fine structure that specific morphology is processed in semiconductor material surface can
To realize multiple functions, such as：Submicron-scale periodicity micro groove structure can be with the anti-reflective optical property on reinforcing material surface；Honeycomb
Smooth micro- hole group of shape tight distribution can form dimple lens array；Rule of surface micro-structure helps to change material hydrophilic
Can, realize super hydrophilic, super hydrophobic functional；Hydrophilic sex differernce caused by different micromorphologies generates surface tension at critical zone
Difference can drive drop autokinetic movement.
It is limited by the high brittleness of semi-conducting material and low fracture toughness, material workability is poor, micro Process difficulty higher.
It is explored for many years beneficial to domestic and international scientific research institution, encouraging progress has been obtained in terms of to such material micro Process, mainly had at present micro-
Turning/Milling Process, Electrolyzed Processing, lithography process, chemical etching processing, laser processing etc..Above-mentioned processing method has their own characteristics each,
There is its applicable situation, also there is respective limitation.For example, when processing monocrystalline silicon using micro- end mill mode, to ensure material removal hair
It is raw to be generated to avoid crackle in ductility region, it needs to control the single step amount of feeding in 250nm hereinafter, leading to material removal efficiency
It is relatively low；When using lithography process, the process is more complicated, high to equipment requirements such as litho machines, and the base of variety classes, different crystal orientations
Body material requires difference to corrosive agent, belongs to material so being more suitable for stablizing, causes processing efficiency relatively low；Conventional laser processing is partly led
Body material is always along with more apparent thermal damage's large-scale production；When using electrochemical dissolution process, it is limited to semiconductor
Material property, current density is often below golden phenomenon, and there is removals using femtosecond laser as the advanced ultrafast laser of representative
The deficiencies of efficiency is low, equipment is expensive.
For semi-conducting material micro Process, some combined machining methods are also proposed both at home and abroad, by mechanical force, laser, electricity
Micro Process purpose is realized in the reasonably combined use of the means such as chemical anode dissolving, electrochemical discharge, chemical attack, water jets impact.
It is found after being retrieved to the prior art, scholar Tangwarodomnukun V etc. are in " An
In an investigation of hybrid laser-waterjet ablation of silicon substrates " texts
A kind of laser water jet Combined Machining Technology for realizing the micro- grooving processing of single crystal silicon material is proposed, which utilizes nanosecond pulse
Laser heats fragile material, and the material after softening is cut off by bias high voltage water jets impact immediately, can effectively avoid micro-crack production
It is raw, while high-pressure jet has pressure cooling effect, is conducive to thermal damage's control, can control groove edge unilateral side thermal damage at 20 μm
Within.But the technology also has its own limitation, shows that microchanneled surface edge and inner wall are more coarse, the fluctuation of slot bottom depth
It is larger, simultaneously as there is the intervention of high-pressure jet percussion, residual stress presence is might have on machined surface.
A kind of method of laser enhancing diamond boring of the U.S. Patent Publication of Publication No. US2017/0120345A1
And device.The material that the hardness such as diamond are high and translucency is good is embedded in metal bit axle center by this method, laser in process
Closely lossless it can pass through, irradiation heats and softens bit contact areas adjacent material, make local hard brittle material in material surface to be processed
It is converted into ductile material, to improve drilling efficiency, improve drilling quality, reduction tool wear.This method can be used for processing
The hard brittle materials such as ceramics, semiconductor, and realize the making of 1mm drill bits.But the diameter that this method is drilled depends on drill bit
Size, and the structure that diamond is embedded in drill bit to make complex, and it is more tired to further decrease bit diameter
Difficulty may limit application of the method in micro processing field.
The Chinese patent of Publication No. CN106735866A discloses a kind of to be added backwards to multifocal dot laser and electrochemical copolymerization
The device and method of work semi-conducting material.The laser beam of Parameter adjustable is applied to the semiconductor samples back of the body by this method from bottom to top
Face inspires a large amount of photohole from semiconductor samples, and it is anti-that hole is moved to participation electrochemistry at semiconductor samples surface
It answers, forming material ablation.Meanwhile tool-electrode, as cathode, semiconductor samples are as anode, by between two electrodes of control
Current potential, it can be achieved that in the case of high potential spark discharge processing and low potential in the case of electrochemistry ablation.The method will
Multifocal dot laser and electrochemical copolymerization act on semiconductor samples, and etching efficiency, the surface quality for improving through-hole can be improved.But
Laser beam precisely " to knife " will realize Compound Machining with electrode in this method, higher to device required precision.
The Chinese patent of Publication No. CN1919514A discloses a kind of spraying liquid bunch and laser coaxial combined machining method,
This method has used for reference Water Jet Guided Laser processing technology, on the basis of laser processing, introduces and sprays liquid with the coaxial high speed of laser beam
Beam is electrolysed material removal, eliminates recast layer, micro-crack and residual stress.This method is conceived to the necks such as aerospace, weaponry
Small Holes between 0.25mm~1.5mm of size involved by domain, seam, the isostructural high-quality and efficient processing of slot, with metal material
Material is processing object, is not directed to semi-conducting material relevant nature.In addition, being limited to jet diameter and jet quality, laser beam exists
Beam quality can decrease during coaxial conductive in jet stream, may result in hot spot diverging so that further decrease processing
Size is more difficult.
Scholar Morin F J and Maita J P are in " Electrical properties of silicon
It is proposed in a containing arsenic and boron " texts, in monocrystalline silicon room temperature and melting temperature section, conductivity
Present increased with temperature and the trend that drastically enhances (conductivity about 25.6S/m at 328 DEG C, conductivity is about at 1335 DEG C
27372.2S/m).Based on this characteristic, as can local temperature field is generated in single crystal silicon material, it can localization reinforcing material conduction
Ability, to realize semi-conducting material localization Electrolyzed Processing.But relevant technical literature is not inquired.
Invention content
The characteristic for increasing and enhancing with temperature the present invention is based on the semi-conducting materials such as silicon conductivity proposes to swash using short pulse
Light irradiation near processing district induction produces local conductivity enhancing region, formed an electric current preferentially by instantaneous localization
Conductive channel, localization enhance electrolysis；Meanwhile laser can ablation issuable passivation layer in time, persistently realize laser heat
Stress effect is with Anodic dissolving from Combined process is coupled, and to obtain, one kind is high in machining efficiency, thermal damage is small, surface quality
Good micro-processing method, while providing the dedicated processing unit (plant) of this method.
In order to reach foregoing invention purpose, the present invention is achieved by following technical solution：
A kind of semi-conducting material laser electrochemical copolymerization micro-processing method is increased using semi-conducting material conductivity with temperature
And the characteristic enhanced, local temperature field is generated by focusing laser beam, while introducing Anodic dissolving, in laser, electrification
Under the collective effect for learning anodic solution, to effectively eliminate recast layer, residual stress, processing quality is improved；It is characterized in that,
The laser beam that laser is sent out irradiates on semi-conducting material, and semi-conducting material is provided with metal film layer on lower face；Metal
Film layer connects with the anode of direct current pulse power source so that the lower surface potential of semi-conducting material is uniformly distributed；DC pulse
The cathode in source connects with metal needle, makes the electrolyte " cathodization " being connected in metal needle；Electrolyte is on semi-conducting material
Surface forms thin electrolyte layer；The metal film layer is isolated from the outside by insulating layer so that direct current pulse power source positive and negative anodes
Between localization conductive channel only pass through semi-conducting material.
Further, the semi-conducting material is conductivity and the positively related semi-conducting material of temperature, in particular monocrystalline silicon.
Further, the electrolyte in metal needle is high concentration neutral saline solutions, mass fraction 25%-40%.
A kind of semi-conducting material laser electrochemical copolymerization micromachining device, including light path system, stabilizing low voltage jet stream generate
And regulating system and electrochemical machining system；The light path system includes laser, optical gate, beam expanding lens, galvanometer and reflective mirror；It is described
The laser beam that laser is sent out after optical gate, using after beam expanding lens through 45 ° setting two pieces of mirror reflections after through cross to shake
Mirror irradiates on semi-conducting material；The electrochemical machining system includes direct current pulse power source, metal film layer and insulating layer；It is described
Metal film layer is arranged in the lower surface of semi-conducting material；Metal film layer is isolated from the outside by insulating layer so that direct current arteries and veins
The localization conductive channel rushed between power positive cathode can only be generated by semi-conducting material；The stabilizing low voltage jet stream generates system packet
Metal needle is included, electrolyte is connected in metal needle, electrolyte forms thin electrolyte layer in semiconductor material upper surface.
Further, the stabilizing low voltage jet stream generates and regulating system further includes servo motor, ball-screw, electrolyte
Cylinder and piston rod；The servo motor is connected by shaft coupling with ball-screw；The ball-screw is driven by sliding block and is lived
Stopper rod moves left and right；The piston rod end is provided with piston；The piston and electrolysis fluid cylinder cooperation；The electrolysis being electrolysed in fluid cylinder
Liquid enters metal needle through hose and forms steady low pressure stream.
Further, the first check valve and the second check valve are installed on the electrolysis fluid cylinder；When servo motor reversely turns
When dynamic, ball-screw drives piston rod steadily to retreat, and the first check valve is closed, and check valve second is opened, the electricity in electrolytic bath
Solution liquid enters electrolysis fluid cylinder under the action of pressure difference through filter；When servo motor rotates forward, ball-screw, which drives, lives
Stopper rod steadily advances, and the first check valve is opened, and the second check valve is closed, and the electrolyte being electrolysed in fluid cylinder passes through under piston rod promotion
Hose enters metal needle, forms steady low pressure stream.
Further, described metal needle one end is equipped with angle demodulator so that jet impulse angle adjustable, jet stream
Impact position adjusts platform by XYZ three-dimensionals and adjusts.
Further, further include infrared camera, high speed camera, hydrophone and current probe；The current probe and water are listened
The signal intensity that device detects is presented by oscillograph, and the imaging signal of high-speed CCD camera and infrared camera detection can be by computer
It presents.
Further, the laser is nanosecond or picosecond pulse laser.
Further, electrolyte recycles filter device, is recycled for electrolyte.
Advantageous effect：
(1) the poor problems of semi-conducting materials processing technology such as monocrystalline silicon are directed to, the semi-conducting materials such as monocrystalline silicon are utilized
Conductivity is increased with temperature and the characteristic of enhancing, will laser machine and Anodic dissolving progress is compound, and realize a kind of add
The processing method that work is efficient, thermal damage is small, surface quality is good solves ic chip package cutting, MEMS
Semiconductor microactuator smallclothes are largely existing in fabricating, tiny seam, hole, slot of the size between 30~200 μm are isostructural adds
Work problem.
(2) present invention is irradiated laser in material using semi-conducting materials conductivity such as monocrystalline silicon to the sensitivity characteristic of temperature
The internal localized regions of elevated temperature regioinvertions generated of material are high conductivity region, formed an electric current preferentially by localization conduction it is logical
Road, current density therein are far above surrounding room temperature material area, to which Anodic dissolving is limited in laser irradiation region
Near domain, realizes laser thermodynamic activity and couple Combined process certainly with what Anodic dissolved, improve processing locality, change
It is apt to processing quality, while avoiding stringent " to the knife " step that relies on to realize the deficiency of Compound Machining.
(3) method of the invention to be based on laser machining, at the same rationally using the semi-conducting materials conductivity such as monocrystalline silicon with
The characteristic that temperature increases and enhances realizes that laser processing is molten with Anodic by low-voltage electrolysis liquid beam introducing Electrolyzed Processing
Compound Machining is solved, not only can guarantee higher processing efficiency, but also can be dissolved by Anodic and effectively reduce laser thermal damage, disappear
Except recast layer and residual stress.In process, laser can ablation issuable passivation layer in time, it is ensured that Electrolyzed Processing is held
It is continuous to carry out.Meanwhile low-voltage electrolysis liquid beam, in the percussion of processing district adjacent position, material surface is forced by persistently existing
Cooling effect helps to be further reduced thermal damage；In addition, laser irradiation initiation etc. in the thin electrolyte layer above processing district
Gas ions generate the micro- agitation of part strength by the bubble modes such as crumble and fall, help to take away processing product, improve flow field, improve
Processing quality.
(4) locality for utilizing laser heating is axially formed along laser beam in the semi-conducting materials such as monocrystalline silicon and instantaneously determines
Domain high-temperature area；External electrical field is introduced near processing district using impact electrolyte beam, electric current will preferentially pass through in material internal
Conductivity enhances region, is formed one " instantaneous localization conductive channel ", realizes the enhancing of current density localization, accelerates local electrification
Learn anodic solution.In addition, in laser pulse gap, due to the continuity of change of temperature field in cooling procedure, high-temperature region in material
Domain can still have a period of time, and localization Electrolyzed Processing is continued, and realizes the post-processing to laser-textured surface, reach reduction heat
Damage, the purpose for reducing residual stress, improving surface quality.
(5) system of processing perfect in shape and function of the invention, is easily assembled to realize.Designed stabilizing low voltage jet stream generates system
It is simple in structure, it is easily installed, overhauls.
Description of the drawings
Attached drawing 1 be the present invention relates to laser electrolysis combined machining method system schematic；
Attached drawing 2 is that the stabilizing low voltage jet stream arrived involved in Fig. 1 of the present invention generates the structural schematic diagram of system.
Reference numeral is as follows：
1, laser, 2, laser beam, 3, optical gate, 4, beam expanding lens, 5, galvanometer, 6, reflective mirror, 7, stabilizing low voltage jet stream generates
And regulating system, 8, metal needle, 9, thin electrolyte layer, 10, semi-conducting material, 11, insulating protective layer, 12, metal film layer,
13, direct current pulse power source, 14, current probe, 15, localization conductive channel, 16, hydrophone, 17, oscillograph, 18, electrolyte recycling
Filter device, 19, high-speed CCD camera, 20, computer, 21, infrared camera, 8, metal needle, 22, flow angle adjuster,
23, adjustable connecting-rod, 24, hose, the 25, first check valve, 26, electrolysis fluid cylinder, 27, piston, 28, piston rod, 29, sliding block, 30, rolling
Ballscrew, the 31, first support base, 32, servo motor, 33, shaft coupling, the 34, second support base, the 35, second check valve, 36, electricity
Solve liquid bath, 37, filter, 38, XYZ three-dimensionals adjust platform.
Specific implementation mode
To be understood the present invention is further, it is described further in conjunction with attached drawing：
Embodiment 1：The present embodiment is the semi-conducting material laser electrolysis combined machining method based on localization conductive channel, will
The laser beam 2 that laser 1 generates focuses on 10 surface of semi-conducting material after external circuits adjust transmission, is imitated using laser heating power
Efficient material removal should be carried out, micropore, microflute processing are completed.Meanwhile laser thermal effect generates local temperature field on micropore periphery,
Localization enhances the electric conductivity of the semi-conducting materials such as monocrystalline silicon.On this basis, stabilizing low voltage electrolyte Shu Shengcheng and tune are utilized
Regulating device introduces biasing electrolyte beam, and in the region of laser irradiation region domain periphery conductivity enhancing, localization introduces electrochemistry sun
Pole is dissolved, and recast layer, residual stress can be effectively eliminated, and improves processing quality.In compound processing course, laser beam thermodynamic activity can
It destroys and eliminates issuable passivation layer in Electrolyzed Processing, it is ensured that Compound Machining persistently carries out.
Electrolyte is neutral saline solutions, can also generate the acid solutions such as dilute hydrochloric acid；Neutral saline solutions are that concentration is appropriate
Neutral saline solutions, mass fraction 20%-40%；Dilute hydrochloric acid solution is mass fraction 5%-15%.
Embodiment 2：In conjunction with attached drawing 1, the present embodiment is that the semi-conducting material laser electrolysis based on localization conductive channel is compound
System of processing, including the generation of light path system, stabilizing low voltage jet stream and regulating system and electrochemical machining system；Light path system includes swashing
Light device 1 and external circuits, wherein external circuits include optical gate 3, beam expanding lens 4, galvanometer 5 and reflective mirror 6.Laser 1 exports laser
Beam 2, by 4 expansion of laser light beam diameter of beam expanding lens, adjusts direction through reflective mirror 6, is finally controlled by galvanometer 5 by protective device optical gate 3
Beam motion form processed, 10 surface of semi-conducting material is arrived in irradiation, and localization conductive channel 15 is formed in semi-conducting material 10.Swash
Light beam 2 generates and the movement of galvanometer 5 is all controlled by computer 20.
This example further includes the generation of stabilizing low voltage jet stream and regulating system 7, and the constant speed electrolyte of generation is after metal needle 8
Stabilizing low voltage jet stream is formed, punching is mapped to 10 surface of semi-conducting material and forms thin electrolyte layer 9.
This example also electrolyte recycles filter device 18, is conducive to electrolyte recycling.
This example further includes electrochemical machining system, including direct current pulse power source 13, and power cathode is connected with metal needle 8,
Jet stream " cathodization ", anode is set to be connected with the metal film layer 12 on 10 lower surface of semi-conducting material so that lower surface potential is equal
Even distribution.Metal film layer 12 is cladded with insulating layer 11, it is ensured that inter-electrode conductive access can only be generated by semi-conducting material 10.
This example further includes compound processing course detecting system, including current probe 14, hydrophone 16, high-speed CCD camera
19 and infrared camera 21, the signal intensity that wherein current probe 14 and hydrophone 16 detect can be presented by oscillograph 17, high speed
The imaging signal that CCD camera 19 and infrared camera 21 detect can be presented by computer 20.
Embodiment 3：In conjunction with attached drawing 2, embodiment is generated for stabilizing low voltage jet stream and regulating system, including servo motor 32 is logical
Crossing shaft coupling 33 drives ball-screw 30 to rotate, and 30 both ends of ball screw pass through the first support base 32 and the second support base 35
Support；By with 30 matched sliding block 29 of ball-screw by the linear motion for being converted into piston rod 28 of ball-screw 30, from
And the electrolyte in electrolysis fluid cylinder 26 is pushed to be exported with constant speed.Electrolyte flows into metal needle through the first check valve 25, hose 24
8, form stabilizing low voltage jet stream.Low pressure stream angle can be adjusted by angle demodulator 22, and jet impulse position can be micro- by XYZ three-dimensionals
Leveling platform 38 is adjusted.First check valve 25 can coordinate 30 forward and reverse movement of ball-screw to realize that electrolyte is defeated with the second check valve 35
Go out and sucks.When servo motor 32 drives 28 positive movement of piston rod, the first check valve 25 to open through ball-screw 30, second is single
It is closed to valve 35, electrolyte enters hose 24 under the promotion of piston 27；When servo motor 32 drives piston rod through ball-screw 30
28 counter motions, the first check valve 25 are closed, and the second check valve 35 is opened, and the electrolyte in electrolytic bath 36 is through 37 quilt of filter
In sucking electrolysis fluid cylinder 26.
The course of work：
Step 1, servo motor 32 drive 28 constant speed of piston rod to retreat through shaft coupling 33, ball-screw 30, the first check valve
25 are closed, and the second check valve 35 is opened, and the electrolyte in electrolytic bath 36 is inhaled into electrolysis fluid cylinder 26 under the action of draught head
In；
Step 2, servo motor 32 drive 28 constant speed of piston rod to advance through shaft coupling 33, ball-screw 30, the first check valve
25 open, and the second check valve 35 is closed, and the electrolyte being electrolysed in fluid cylinder 26 enters metal needle 8 through hose 24, is formed and stablizes electricity
Solve liquid jet stream；
Step 3 stablizes electrolyte jet impulse to 10 surface of semi-conducting material, it is steady to be formed about thickness in shock zone
Fixed thin electrolyte layer 9；Platform 38, which is adjusted, using angle demodulator 22, XYZ three-dimensionals adjusts jet impulse regional location；
Step 4 connects direct current pulse power source 13, forms Electrolyzed Processing current loop；
Step 5 controls laser beam 2 by computer 20 and exports, passes through the optics such as beam expanding lens 4, speculum 6, galvanometer 5 member
Bombardment with laser beams position is adjusted near stabilizing solution beam impact position by part, and focuses on semiconductor material across thin electrolyte layer 9
Expect 10 surfaces；
Step 6 controls laser beam using galvanometer 5 and moves, processes the micro-structures such as required hole, slot, seam；
Step 7 in process, utilizes high-speed CCD camera 19, infrared camera 21, current probe 14, hydrophone 16 etc.
Detection instrument observes phenomena such as heat and mass, curent change, to realize the monitoring to process；
Step 8 after processed, closes laser 1 and direct current pulse power source 13, stops servo motor 32 and rotates；
The embodiment is the preferred embodiments of the present invention, but present invention is not limited to the embodiments described above, not
Away from the present invention substantive content in the case of, those skilled in the art can make it is any it is conspicuously improved, replace
Or modification all belongs to the scope of protection of the present invention.
Claims (10)
1. a kind of semi-conducting material laser electrochemical copolymerization micro-processing method, increased with temperature using semi-conducting material conductivity and
The characteristic of enhancing generates local temperature field by focusing laser beam, while introducing Anodic dissolving, in laser, electrochemistry
Under the collective effect of anodic solution, to effectively eliminate recast layer, residual stress, processing quality is improved；It is characterized in that, swashing
The laser beam (2) that light device (1) is sent out irradiates on semi-conducting material (10), and metal is provided on semi-conducting material (10) lower face
Film layer (12)；Metal film layer (12) connects with the anode of direct current pulse power source (13) so that under semi-conducting material (10)
Surface potential is uniformly distributed；The cathode of direct current pulse power source (13) connects with metal needle (8), makes to be connected in metal needle (8)
Electrolyte " cathodization "；Electrolyte forms thin electrolyte layer (9) in semi-conducting material (10) upper surface；The metal film layer
(12) it is isolated from the outside by insulating layer (11) so that the localization conductive channel (15) of direct current pulse power source (13) positive and negative interpolar is only
Pass through semi-conducting material (10).
2. semi-conducting material laser electrochemical copolymerization micro-processing method according to claim 1, which is characterized in that described half
Conductor material is conductivity and the positively related semi-conducting material of temperature, in particular monocrystalline silicon.
3. semi-conducting material laser electrochemical copolymerization micro-processing method according to claim 1, which is characterized in that metal needle
Electrolyte in head (8) is high concentration neutral saline solutions, mass fraction 25%-40%.
4. a kind of semi-conducting material laser electrochemical copolymerization micromachining device, including light path system, stabilizing low voltage jet stream generate and
Regulating system (7) and electrochemical machining system；It is characterized in that, the light path system includes laser (1), optical gate (3), beam expanding lens
(4), galvanometer (5) and reflective mirror (6)；The laser beam (2) that the laser (1) sends out is after optical gate (3), using beam expanding lens
(4) it is irradiated on semi-conducting material (10) by galvanometer (5) by after 45 ° of two pieces of reflective mirrors (6) being arranged reflections；The electrolysis
System of processing includes direct current pulse power source (13), metal film layer (12) and insulating layer (11)；The metal film layer (12) sets
Set the lower surface in semi-conducting material (10)；Metal film layer (12) is isolated from the outside by insulating layer (11) so that direct current arteries and veins
Rushing the localization conductive channel (15) of power supply (13) positive and negative interpolar can only be generated by semi-conducting material (10)；The stabilizing low voltage is penetrated
Stream generation system (7) includes metal needle (8), is connected with electrolyte in metal needle (8), electrolyte is on semi-conducting material (10)
Surface forms thin electrolyte layer (9).
5. semi-conducting material laser electrochemical copolymerization micromachining device according to claim 4, which is characterized in that described steady
It further includes servo motor (32), ball-screw (30), electrolysis fluid cylinder (26) and piston to determine low pressure stream generation and regulating system (7)
Bar (28)；The servo motor (32) is connected by shaft coupling (33) with ball-screw (30)；The ball-screw (30) is logical
Crossing sliding block (29) drives piston rod (28) to move left and right；Piston rod (28) end set has piston (27)；The piston
(27) coordinate with electrolysis fluid cylinder (26)；The electrolyte being electrolysed in fluid cylinder (26) enters metal needle (8) formation through hose (24) puts down
Steady low pressure stream.
6. semi-conducting material laser electrochemical copolymerization micromachining device according to claim 5, which is characterized in that the electricity
The first check valve (25) and the second check valve (35) are installed on solution fluid cylinder (26)；When servo motor (32) rotates backward, rolling
Ballscrew (30) drives piston rod (28) steadily to retreat, and the first check valve (25) is closed, and check valve second (35) is opened, electrolyte
Electrolyte in slot (36) enters electrolysis fluid cylinder (26) under the action of pressure difference through filter (37)；When servo motor (32) just
To when rotation, ball-screw (30) drives piston rod (28) steadily to advance, and the first check valve (25) is opened, the second check valve (35)
It is closed, the electrolyte in electrolysis fluid cylinder (26) enters metal needle (8) under piston rod (28) promotion through hose (24), is formed flat
Steady low pressure stream.
7. the semi-conducting material laser electrochemical copolymerization micromachining device according to claim 5 or 6, which is characterized in that
Described metal needle (8) one end is equipped with angle demodulator (22) so that jet impulse angle adjustable, jet impulse position by
XYZ three-dimensionals adjust platform (38) and adjust.
8. semi-conducting material laser electrochemical copolymerization micromachining device according to claim 4, which is characterized in that further include
Infrared camera (21), high speed camera (19), hydrophone (16) and current probe (14)；The current probe (14) and hydrophone
(16) signal intensity detected is presented by oscillograph (17), the imaging of high-speed CCD camera (19) and infrared camera (21) detection
Signal can be presented by computer (20).
9. semi-conducting material laser electrochemical copolymerization micromachining device according to claim 4, which is characterized in that described to swash
Light device (1) is nanosecond or picosecond pulse laser.
10. semi-conducting material laser electrochemical copolymerization micromachining device according to claim 4, which is characterized in that electrolysis
Liquid recycles filter device (18), is recycled for electrolyte.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810674637.7A CN108526627B (en) | 2018-06-27 | 2018-06-27 | Laser-electrochemical composite micromachining method and device for semiconductor material |
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|---|---|---|---|
| CN201810674637.7A CN108526627B (en) | 2018-06-27 | 2018-06-27 | Laser-electrochemical composite micromachining method and device for semiconductor material |
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| Publication Number | Publication Date |
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| CN108526627A true CN108526627A (en) | 2018-09-14 |
| CN108526627B CN108526627B (en) | 2020-07-31 |
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Cited By (12)
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| CN113290386B (en) * | 2021-05-10 | 2022-07-08 | 长春理工大学 | Steady flow area laser/ultrasonic composite low-damage complex microstructure machining device and method |
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| CN114346338A (en) * | 2022-01-21 | 2022-04-15 | 江苏大学 | Electrochemical machining method and device based on flexible PI film conductive characteristic laser localized regulation |
| CN114346337A (en) * | 2022-01-21 | 2022-04-15 | 江苏大学 | Abrasive particle assisted laser electrolysis self-coupling cooperative alignment punching method and system |
| WO2023137820A1 (en) * | 2022-01-21 | 2023-07-27 | 江苏大学 | Abrasive particle-assisted laser electrolysis self-coupling collaborative alignment drilling method and system |
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