CN113146066A - Laser electrolysis back collaborative group hole punching method and system - Google Patents
Laser electrolysis back collaborative group hole punching method and system Download PDFInfo
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- CN113146066A CN113146066A CN202110383677.8A CN202110383677A CN113146066A CN 113146066 A CN113146066 A CN 113146066A CN 202110383677 A CN202110383677 A CN 202110383677A CN 113146066 A CN113146066 A CN 113146066A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
Abstract
The invention discloses a laser electrolysis back-to-back cooperative group drilling method and a system, which relate to the field of special processing.A laser is irradiated on a semiconductor material to form a local high-temperature area at the designated position of the semiconductor material so as to localize and enhance the conductivity, and the semiconductor material is used as an anode and connected with the anode of a direct-current pulse power supply; the negative pole of the direct current pulse power supply is connected with the cathode array needle tube, and a certain gap exists between the cathode array needle tube and the semiconductor material; the clearance is realized by computer control communicated with a sensitive pressure gauge; electrolyte is introduced into a gap between the semiconductor material and the cathode array needle tube in a low-pressure jet mode through the cathode array needle tube so as to take away bubbles and impurities, a circuit between a cathode and an anode is conducted, an electrochemical anode dissolving area on the back of the semiconductor material corresponds to an irradiation position of a laser beam on the upper surface, and a group hole is formed on the lower surface through point scanning at a designated position of the laser beam. The invention can obtain the group hole structure with high quality and high depth-diameter ratio.
Description
Technical Field
The invention relates to the field of special processing, in particular to a laser electrolysis back collaborative group drilling method and system for micro-seams, holes, grooves and other structures.
Background
Semiconductor materials represented by silicon and germanium are widely applied to the fields of integrated circuits, solar cells, micro-electro-mechanical systems and the like, and high-efficiency, precise and fine application scenes put high requirements on high-quality micro-processing of the materials. Taking integrated circuit manufacturing as an example, Through Silicon Via (TSV) technology is a new technical solution for realizing interconnection of stacked chips in a three-dimensional integrated circuit, can maximize the stacking density of chips in the three-dimensional direction, minimize the interconnection lines between the chips, minimize the overall dimension, and greatly improve the performance of chip speed and low power consumption, and becomes the most attractive technology in the current electronic packaging technology. Through-hole processing on a wafer is the core of the TSV technology, and at present, the through-hole processing technology mainly comprises two technologies, namely Deep Reactive Ion Etching (DRIE) and laser drilling. DRIE is an ion-enhanced chemical reaction, in which an etching system uses an RF-powered plasma source to obtain ions and chemically reactive radicals, which are accelerated by an electric field to impact a wafer with strong directionality, and high-rate etching is realized in an unprotected region along a specified direction, while additional gas is introduced to passivate the sidewalls of the protective holes, so as to obtain a highly anisotropic etching effect. However, in the above etching, as the etching depth increases, it is difficult to discharge a part of the reaction product and the product formed in the silicon deep hole in time, which causes a large damage to the surface, contamination, difficulty in forming a fine pattern, and high cost.
Laser drilling does not need a mask, so that the process steps of photoresist coating, photoetching exposure, developing, photoresist removing and the like are avoided, and great progress is made. However, laser drilling also has its disadvantages, such as: if the material is melted and then rapidly solidified, spherical nodules are easily formed on the surface of the through hole; the roughness of the inner wall of the through hole is large, and a continuous silicon insulating layer is difficult to deposit; the sub-surface thermal damage of the inner wall of the through hole is large, and the reliability of the filled hole is influenced; the accuracy of the size of the manufactured through hole is low, and the like. Therefore, laser drilling cannot independently meet the future through hole processing requirements of smaller aperture and high depth-diameter ratio.
The prior art is searched to find that the patent with the Chinese patent publication number of CN101572231A discloses a method and a device for forming a semiconductor vertical through hole, wherein the processing of the semiconductor vertical through hole is realized through micro electric spark discharge, micro electrochemical polishing and side wall passivation processes, but the method sequentially uses three processes, has more complicated steps and does not relate to the discussion of group hole processing. The patent with the Chinese patent publication No. CN109732199B discloses a laser-electrochemical back-to-back cooperative micromachining method for semiconductor materials, which utilizes a cathode copper plate to provide a uniform electric field, utilizes the positive laser thermal effect to localize and improve the conductivity of the semiconductor materials such as silicon, germanium and the like, and forms a localized to-point channel through which current preferentially passes, thereby realizing localized electrolysis on the back of the materials. However, it is difficult to form a deep hole having a large depth-diameter ratio by this method because of the characteristics such as thermal diffusion and electrolytic stray corrosion.
Disclosure of Invention
Aiming at the defects in the prior art, the invention is based on the characteristic that the conductivity of semiconductor materials such as silicon and the like is enhanced along with the rise of temperature, local conductivity enhanced areas are induced and generated at a plurality of specified positions on the upper surface of the material by short pulse laser point scanning, and an instantaneous localized conductive channel through which current preferentially passes is formed; meanwhile, electrolytic machining is introduced by using a cathode array needle tube on the back of the material, the laser scanning position is ensured to correspond to the position of a cathode needle head through the early tool setting step, efficient electrochemical anode dissolution is realized at the position where the conductivity is locally enhanced, low-voltage steady flow is emitted from the needle head, so that electrolysis products such as bubbles can be taken away, the continuous realization of the stable cooperative machining of the laser thermal effect on the upper surface of the material and the electrochemical anode dissolution on the back of the material is ensured, and therefore the micropore array with the high depth-diameter ratio is obtained, and has high machining efficiency, small heat damage and good surface quality.
The present invention achieves the above-described object by the following technical means.
A laser electrolysis back-to-back cooperative group hole drilling method is characterized in that laser is irradiated on a semiconductor material, a local high-temperature area is formed at the designated position of the semiconductor material, so that the conductivity is enhanced in a localized mode, and the semiconductor material is used as an anode and connected with the anode of a direct-current pulse power supply; the negative pole of the direct current pulse power supply is connected with the cathode array needle tube, and a certain gap exists between the cathode array needle tube and the semiconductor material; the clearance is realized by computer control communicated with a sensitive pressure gauge; electrolyte is introduced into a gap between the semiconductor material and the cathode array needle tube in a low-pressure jet mode through the cathode array needle tube so as to take away bubbles and impurities, a circuit between a cathode and an anode is conducted, an electrochemical anode dissolving area on the back of the semiconductor material corresponds to an irradiation position of a laser beam on the upper surface, and a group hole is formed on the lower surface through point scanning at a designated position of the laser beam.
Further, the semiconductor material is a semiconductor material with conductivity positively correlated to temperature, and can be monocrystalline silicon or monocrystalline germanium.
A laser electrolysis back-to-back cooperative group hole drilling system comprises a laser processing system, a stable low-pressure jet system, an electrolytic processing system and a motion control system; the laser processing system is used for providing energy for processing the semiconductor material, the stable low-pressure jet system is used for providing electrolyte in a low-pressure jet mode, the electrolytic processing system is used for electrolytically processing the semiconductor material, and the motion control system is used for controlling a gap between the cathode array needle tube and the semiconductor material; the motion control system comprises a sensitive pressure gauge, an adjustable rod frame and a computer; the semiconductor material is arranged on the lower end face of the inner groove, a plurality of through holes are formed in the position where the semiconductor material is arranged on the lower end face of the inner groove, and the cathode array needle tube penetrates through the through holes; the adjustable rod frame is connected with the inner groove and used for adjusting the distance between the inner groove and the cathode array needle tube, when the cathode array needle tube is in contact with a semiconductor material, the sensitivity manometer senses the pressure, and the computer receives a pressure signal of the sensitivity manometer and then enables the adjustable rod frame to perform corresponding actions.
Further, the device also comprises a clamping device which is used for guiding and positioning the semiconductor material; the clamping device comprises an inner hexagon bolt, a pressing sheet and a rubber gasket; one end of the inner hexagon bolt is arranged on the lower end face of the inner groove, and a pressing sheet and a rubber gasket are sequentially arranged on the inner hexagon bolt; the rubber gasket is disposed over the upper surface of the semiconductor material, and the semiconductor material compresses the rubber gasket when the cathode array needle cannula contacts the semiconductor material.
Further, the laser processing system comprises a laser, a laser beam, a beam expander, a reflector, a galvanometer and a lens; laser beams emitted by the laser pass through the beam expanding lens, change a light path through the reflector, enter the vibrating mirror, and are finally irradiated on the semiconductor material through the lens, and parameters of the laser beams emitted by the laser are controlled through the computer.
Furthermore, the electrolytic machining system comprises an inner groove, an outer groove, electrolyte, a current probe, an oscilloscope and a direct current pulse power supply; the inner groove is arranged in the outer groove, electrolyte is contained in the outer groove, and the semiconductor material is communicated with the anode of the direct-current pulse power supply; the negative pole of the direct current pulse power supply is communicated with the cathode array needle tube; the current probe is used for detecting whether current exists or not, and the oscilloscope is used for displaying the current condition.
Further, the stable low-pressure jet system comprises a first one-way valve, an electrolyte cylinder, a piston, a connecting rod, a first supporting seat, a servo motor, a coupler, a lead screw, a sliding block, a second supporting seat, an electrolyte tank, a filter and a second one-way valve; the output end of the servo motor is connected with a lead screw through a coupler, two ends of the lead screw are respectively supported through a first supporting seat and a second one-way valve, the lead screw is used for driving a sliding block arranged on the upper side, one end of a connecting rod is hinged to the sliding block, the other end of the connecting rod is used for compressing an electrolyte cylinder, a first one-way valve is arranged at the output end of the electrolyte cylinder, and the output end of the first one-way valve is communicated with a cathode array needle tube; the electrolyte tank is also connected with a second one-way valve, and the second one-way valve filters redundant electrolyte and then flows into the electrolyte tank.
Furthermore, the cathode array needle tubes are provided with a plurality of positions corresponding to the semiconductor material, wherein the positions of the cathode array needle tubes corresponding to the semiconductor material are positions to be punched on the semiconductor material; the depth of the holes punched in the semiconductor material by electrolysis is controlled by a computer, and holes with a vacuole structure or holes with an inclined hole structure can be punched on the lower end surface of the semiconductor material in the laser-assisted electrolysis punching process.
Furthermore, the positions of the cathode array needle tubes except the positions of the needles are coated with insulating layers.
Further, the electrolyte is a high-concentration neutral saline solution, and the mass fraction of the electrolyte is 10-30%; or alkali solution with the mass fraction of 4-10 percent; the laser is a nanosecond pulse laser or a picosecond pulse laser.
Has the advantages that:
1. aiming at the difficult problems of high quality and high depth-diameter ratio group hole processing of semiconductor materials such as monocrystalline silicon and the like, a short pulse laser point scanning strategy is provided to induce and generate local conductivity enhancement areas at a plurality of specified positions on the upper surface of the material so as to form an instantaneous localized conductive channel through which current preferentially passes; meanwhile, electrolytic machining is introduced on the back of the material by using a cathode needle tube array, the laser scanning position is ensured to correspond to the cathode needle head position through the early tool setting step, and efficient electrochemical anode dissolution is realized at the position where the conductivity is locally enhanced. Meanwhile, the side wall of the used cathode array needle tube is insulated, so that the stray corrosion of the side wall can be effectively reduced, and the depth-diameter ratio of the micropore is improved; the low-pressure steady flow ejection is arranged in the needle head, so that electrolysis products such as bubbles can be taken away, and the stable cooperative processing of the laser irradiation on the upper surface of the material and the electrochemical anode dissolution on the back surface of the material can be ensured, thereby obtaining the micropore array with high quality and high depth-diameter ratio.
2. The invention realizes the processing of the micropores with high depth-diameter ratio by relying on electrolytic processing in nature, the obtained micropores have no residual stress, no thermal damage and good surface quality, and no post-treatment is needed after processing, thereby efficiently solving the mass group hole processing problems existing in the processes of packaging and cutting of integrated circuit chips and processing and manufacturing of micro semiconductor parts of micro electro mechanical systems.
3. The method has high feasibility, and can realize laser electrolysis back cooperative processing without tool loss by only remanufacturing the cathode array needle and adjusting the laser scanning point position on the upper surface aiming at different group hole distributions.
4. The semiconductor material is obliquely arranged, so that a high-quality inclined hole array can be processed by the method; by controlling the feeding rate of the needle head, the processing of the inner 'cavity structure' of the semiconductor material can be realized.
5. The processing system of the invention has perfect functions and is easy to assemble and realize. The designed cathode and anode position adjusting device is simple in structure and easy to install and maintain.
Drawings
FIG. 1 is a system diagram of a laser electrolytic back-side cooperative micromachining process according to an embodiment of the invention;
FIG. 2 is a schematic diagram of the structure of the stable low pressure jet generating system of FIG. 1 according to the present invention:
FIG. 3 is a schematic illustration of the fabrication of inclined cluster holes and cavitation structures.
The reference numbers are as follows:
1-a laser; 2-a laser beam; 3-a beam expander; 4-a reflector; 5-a galvanometer; 6-a lens; 7-an inner groove; 8-hexagon socket head cap screw; 9-tabletting; 10-a rubber gasket; 11-stable low pressure fluidic system; 12-a semiconductor material; 13-microwell; 14-cathode array needle tubing; 15-outer groove; 16-an electrolyte; 17-a sensitive pressure gauge; 18-a base; 19-adjustable frame rod; 20-current probe; 21-an oscilloscope; 22-a direct current pulse power supply; 23-a computer; 24-a first one-way valve; 25-an electrolyte tank; 26-a piston; 27-a connecting rod; 28-a first support; 29-a servo motor; 30-a coupler; 31-a lead screw; 32-a slide block; 33-a second support seat; 34-an electrolyte reservoir; 35-a filter; 36-a second one-way valve; 37-inclined hole structure; 38-an insulating layer; 39-vacuole structure.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "axial," "radial," "vertical," "horizontal," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
A laser electrolysis back-to-back cooperative group hole drilling system comprises a laser processing system, a stable low-pressure jet system 11, an electrolytic processing system and a motion control system; the laser processing system is used for providing energy for processing the semiconductor material 12, the stable low-pressure jet system 11 is used for providing electrolyte in a low-pressure jet mode, the electrochemical processing system is used for electrolytically processing the semiconductor material 12, and the motion control system is used for controlling a gap between the cathode array needle tube 14 and the semiconductor material 12; the motion control system comprises a sensitive pressure gauge 17, an adjustable rod frame 19 and a computer 23; the semiconductor material 12 is arranged on the lower end face of the inner groove 7, a plurality of through holes are formed in the positions, where the semiconductor material 12 is arranged, on the lower end face of the inner groove 7, and the cathode array needle tubes 14 penetrate through the through holes; the adjustable bar frame 19 is connected with the inner groove 7, the adjustable bar frame 19 is used for adjusting the distance between the inner groove 7 and the cathode array needle tube 14, when the cathode array needle tube 14 is contacted with the semiconductor material 12, the sensitivity pressure gauge 17 senses the pressure, and the computer 23 receives the pressure signal of the sensitivity pressure gauge 17 and enables the adjustable bar frame 19 to do corresponding action.
Wherein the clamping device is used to guide and position the semiconductor material 12; the clamping device comprises an inner hexagon bolt 8, a pressing sheet 9 and a rubber gasket 10; one end of the inner hexagon bolt 8 is arranged on the lower end face of the inner groove 7, and a pressing sheet 9 and a rubber gasket 10 are sequentially arranged on the inner hexagon bolt 8; the rubber gasket 10 is placed over the upper surface of the semiconductor material 12, and when the cathode array needle 14 contacts the semiconductor material 12, the semiconductor material 12 compresses the rubber gasket 10.
The laser processing system comprises a laser 1, a laser beam 2, a beam expander 3, a reflector 4, a vibrating mirror 5 and a lens 6; the laser beam 2 emitted by the laser 1 passes through the beam expander 3, then the light path of the laser beam is changed by the reflector 4, then the laser beam enters the vibrating mirror 5, finally the laser beam is irradiated on the semiconductor material 12 through the lens 6, and the parameters of the laser beam 2 emitted by the laser 1 are controlled through the computer 23.
The electrolytic machining system comprises an inner groove 7, an outer groove 15, electrolyte 16, a current probe 20, an oscilloscope 21 and a direct current pulse power supply 22; the inner tank 7 is arranged in an outer tank 15, the outer tank 15 is filled with electrolyte 16, and the semiconductor material 12 is communicated with the anode of a direct current pulse power supply 22; the negative pole of the direct current pulse power supply 22 is communicated with the cathode array needle tube 14; the current probe 20 is used to detect the presence of current and the oscilloscope 21 is used to display the current condition.
The stable low-pressure jet system 11 comprises a first one-way valve 24, an electrolyte cylinder 25, a piston 26, a connecting rod 27, a first supporting seat 28, a servo motor 29, a coupler 30, a lead screw 31, a sliding block 32, a second supporting seat 33, an electrolyte tank 34, a filter 35 and a second one-way valve 36; the output end of the servo motor 29 is connected with a screw rod 31 through a coupler 30, two ends of the screw rod 31 are respectively supported through a first supporting seat 28 and a second one-way valve 36, the screw rod 31 is used for driving a sliding block 32 arranged on the upper side, one end of a connecting rod 27 is hinged on the sliding block 32, a piston 26 connected with the other end of the connecting rod 27 is used for compressing an electrolyte cylinder 25, a first one-way valve 24 is arranged at the output end of the electrolyte cylinder 25, and the output end of the first one-way valve 24 is communicated with a cathode array needle tube 14; the electrolyte tank 25 is also connected to a second check valve 36, and the second check valve 36 filters excess electrolyte through a filter 35 and flows into the electrolyte tank 34.
The cathode array needle tubes 14 are provided with a plurality of positions, corresponding to the positions of the semiconductor material 12, of the cathode array needle tubes 14, which are positions to be punched on the semiconductor material 12; the depth of the holes electrolytically drilled in the semiconductor material 12 is controlled by the computer 23, and the holes of the cavitation structure 39 or the holes of the inclined hole structure 37 can be drilled on the lower end face of the semiconductor material 12 in the laser-assisted electrolytic drilling process.
With reference to fig. 1 and 3, a laser electrolysis back-to-back cooperative group-drilling method for semiconductor materials is based on the characteristic that the conductivity of semiconductor materials such as silicon is enhanced along with the rise of temperature, local conductivity enhanced regions are induced and generated at a plurality of designated positions on the upper surface of the materials by short pulse laser point scanning, and instantaneous localized conductive channels through which current preferentially passes are formed; meanwhile, electrolytic machining is introduced into the back of the material by utilizing a cathode needle tube array subjected to outer wall insulation treatment, the laser scanning position is ensured to correspond to the position of a cathode needle head through the early tool setting step, and then efficient electrochemical anodic dissolution is realized at the position where the conductivity is locally enhanced, so that efficient localized electrolytic machining of the back of the material is realized, and a group hole structure with high quality, high depth-diameter ratio, no recast layer, no thermal damage and no residual stress is obtained at one time; the laser beam 2 emitted by the laser 1 is irradiated on the semiconductor material 12, a local high-temperature region is formed in the material, the conductivity is enhanced in a localized mode, and the semiconductor material 12 is connected with the positive electrode of the direct-current pulse power supply 22; the negative pole of the direct current pulse power supply 22 is connected with the cathode array needle tube 14, the insulating layer 38 is plated below the needle head of the cathode array needle tube 14, and the cathode array needle tube and the semiconductor material 12 can be parallel or inclined, so that a gap is always reserved between the cathode array needle tube and the semiconductor material; electrolyte is introduced into a gap between the anode semiconductor material 12 and the cathode array needle tube 14 in a low-pressure jet mode through the cathode array needle tube 14 so as to accelerate the flow of the electrolyte to take away products such as bubbles and the like, ensure the continuous and stable processing and lead the circuit between the anode and the cathode to be conducted, and an electrochemical anode dissolving area on the back surface of the semiconductor material 12 corresponds to the irradiation position of the laser beam 2 in a rapid 'point sweeping' mode.
The inner groove 7 is connected with a base 18 through an adjustable frame rod 19, a sensitive pressure sensor 17 is arranged between the base 18 and the outer groove 15, the sensitive pressure sensor 17 and the adjustable frame rod 19 are connected with a computer 23, the adjustable frame rod 19 is fed slightly under the control of the computer 23, when the needle tube 14 is in contact with the semiconductor material 12, the pressure sensor 17 senses pressure, the computer 23 controls the adjustable frame rod 14 to finely adjust upwards, so that the semiconductor material 8 is slightly separated from the needle head, and continuous controllable processing is realized.
The array needle tubes in the figures 1 and 3 can be replaced by other shapes, and different shapes of structures can be obtained on the back surface of the semiconductor material by changing the laser scanning path.
The laser 1 can be a conventional nanosecond pulse laser or a picosecond/femtosecond ultrashort pulse laser. The use of the ultrashort pulse laser is beneficial to the concentration of a temperature field in the material, the localization of electrolytic machining on the lower surface of the material can be further enhanced, and the machining quality is improved.
The electrolyte is neutral saline solution, and corrosive solutions such as sodium hydroxide and the like can also be used; the neutral saline solution is a neutral saline solution with proper concentration, and the mass fraction of the neutral saline solution is 10-30%; the mass fraction of the sodium hydroxide solution is 4-10%.
A current probe 20 is arranged between the oscilloscope 21 and the adjustable pulse power supply 22, the oscilloscope 21 is connected to the current probe 20 to provide an intuitive oscillogram, the current probe 20 is connected to the adjustable pulse power supply 22, and the current probe 20 acquires pulse signals and transmits the pulse signals to the oscilloscope 21. The addition of the adjustable power supply 22 allows the machining to be more finely performed, and the recording of the pulse and the current-voltage signal allows the device to be quickly matched with the laser to be adjusted, so that the machining process can be efficiently performed.
The embodiment is a semiconductor material laser electrolysis back-to-back collaborative group drilling processing system, a laser 1 outputs a laser beam 2, the diameter of the laser beam is enlarged by a beam expander 3, the direction is adjusted by a reflector 4, the motion form of the beam is controlled by a vibrating mirror 5, and finally the beam is focused by a lens 6 and then irradiated on the surface of a semiconductor material 12, so that the conductivity of a specified position in the semiconductor material 12 is locally improved. The generation of the laser beam 2 and the movement of the galvanometer 5 are controlled by a computer 23.
Referring to fig. 2, the servo motor 29 drives the ball screw 31 to rotate through the coupling 30, and two ends of the ball screw 31 are supported by the first support seat 28 and the second support seat 33; the rotation of the ball screw 31 is converted into the linear motion of the piston rod 26 by the slider 32 matched with the ball screw 31, so that the electrolyte in the electrolyte tank 34 is pushed to be output at a constant speed. The electrolyte flows into the metal needle 14 through the first one-way valve 24 and the hose to form stable low-pressure jet flow. The first check valve 24 and the second check valve 36 can realize the output and the suction of the electrolyte by matching with the forward and reverse movement of the ball screw 31. When the servo motor 29 drives the piston rod 26 to move forward through the ball screw 31, the first one-way valve 24 is opened, the second one-way valve 36 is closed, and the electrolyte enters the hose under the pushing of the piston 26; when the servo motor 29 drives the piston rod 26 to move reversely through the ball screw 31, the first one-way valve 24 is closed, the second one-way valve 36 is opened, and the electrolyte in the electrolyte storage tank 34 is sucked into the electrolyte cylinder 25 through the filter 35, thereby completing the process of forming stable low-pressure jet flow from the needle.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention.
Claims (10)
1. A laser electrolysis back-to-back cooperative group hole drilling method is characterized in that laser is irradiated on a semiconductor material (12), a local high-temperature area is formed at a designated position of the semiconductor material (12), so that the conductivity is enhanced locally, and the semiconductor material (12) is used as an anode and connected with the positive electrode of a direct current pulse power supply (22); the negative pole of the direct current pulse power supply (22) is connected with the cathode array needle tube (14), and a certain gap exists between the cathode array needle tube (14) and the semiconductor material (12); the clearance is realized by the control of a computer (23) communicated with the sensitive pressure gauge (17); electrolyte is introduced into a gap between the semiconductor material (12) and the cathode array needle tube (14) in a low-pressure jet mode through the cathode array needle tube (14) to carry away bubbles and impurities, so that a circuit between a cathode and an anode is conducted, an electrochemical anode dissolving area on the back surface of the semiconductor material (12) corresponds to an irradiation position of the upper surface of the laser beam (2), and a group of holes are formed on the lower surface in an electrolytic machining mode through 'point scanning' of a designated position of the laser beam (2).
2. Laser electrolytic back-side cooperative trepanning method according to claim 1, characterized in that the semiconductor material (12) is a semiconductor material with a conductivity directly correlated to temperature, optionally single crystal silicon or single crystal germanium.
3. A laser electrolysis back-to-back cooperative group hole drilling system is characterized by comprising a laser processing system, a stable low-pressure jet system (11), an electrolytic processing system and a motion control system; the laser processing system is used for providing energy for processing the semiconductor material (12), the stable low-pressure jet system (11) is used for providing electrolyte in a low-pressure jet mode, the electrolytic processing system is used for electrolytically processing the semiconductor material (12), and the motion control system is used for controlling a gap between the cathode array needle tube (14) and the semiconductor material (12); the motion control system comprises a sensitive pressure gauge (17), an adjustable rod frame (19) and a computer (23); the semiconductor material (12) is arranged on the lower end face of the inner groove (7), a plurality of through holes are formed in the positions, where the semiconductor material (12) is arranged, on the lower end face of the inner groove (7), and the cathode array needle tube (14) penetrates through the through holes; the adjustable rod frame (19) is connected with the inner groove (7), the adjustable rod frame (19) is used for adjusting the distance between the inner groove (7) and the cathode array needle tube (14), when the cathode array needle tube (14) is in contact with the semiconductor material (12), the sensitivity pressure gauge (17) senses pressure, and the computer (23) receives a pressure signal of the sensitivity pressure gauge (17) and enables the adjustable rod frame (19) to do corresponding actions.
4. A laser electrolytic back side cooperative trepanning system according to claim 3, further comprising a clamping device for guiding and positioning the semiconductor material (12); the clamping device comprises an inner hexagon bolt (8), a pressing sheet (9) and a rubber gasket (10); one end of the inner hexagon bolt (8) is arranged on the lower end face of the inner groove (7), and a pressing sheet (9) and a rubber gasket (10) are sequentially arranged on the inner hexagon bolt (8); the rubber gasket (10) is disposed over an upper surface of the semiconductor material (12), and the semiconductor material (12) compresses the rubber gasket (10) when the cathode array needle cannula (14) contacts the semiconductor material (12).
5. The laser electrolytic back-to-back cooperative trepanning system according to claim 3, wherein the laser processing system comprises a laser (1), a laser beam (2), a beam expander (3), a reflector (4), a galvanometer (5) and a lens (6); laser beams (2) emitted by the laser (1) pass through the beam expander (3), then pass through the reflector (4), change the light path, enter the vibrating mirror (5), finally pass through the lens (6) and irradiate on the semiconductor material (12), and parameters of the laser beams (2) emitted by the laser (1) are controlled through the computer (23).
6. The laser electrolysis back-to-back cooperative group drilling system according to claim 3, wherein the electrolytic machining system comprises an inner tank (7), an outer tank (15), an electrolyte (16), a current probe (20), an oscilloscope (21) and a direct current pulse power supply (22); the inner tank (7) is arranged in the outer tank (15), the outer tank (15) is filled with electrolyte (16), and the semiconductor material (12) is communicated with the anode of the direct-current pulse power supply (22); the negative pole of the direct current pulse power supply (22) is communicated with the cathode array needle tube (14); the current probe (20) is used for detecting whether current exists or not, and the oscilloscope (21) is used for displaying the current condition.
7. The laser electrolysis back-to-back cooperative group perforating system as claimed in claim 3, characterized in that the stable low-pressure jet system (11) comprises a first one-way valve (24), an electrolyte cylinder (25), a piston (26), a connecting rod (27), a first support seat (28), a servo motor (29), a coupling (30), a lead screw (31), a slider (32), a second support seat (33), an electrolyte tank (34), a filter (35) and a second one-way valve (36); the output end of the servo motor (29) is connected with a lead screw (31) through a coupler (30), the two ends of the lead screw (31) are respectively supported through a first supporting seat (28) and a second one-way valve (36), the lead screw (31) is used for driving a sliding block (32) arranged on the upper side, one end of a connecting rod (27) is hinged to the sliding block (32), a piston (26) connected with the other end of the connecting rod (27) is used for compressing an electrolyte cylinder (25), a first one-way valve (24) is arranged at the output end of the electrolyte cylinder (25), and the output end of the first one-way valve (24) is communicated with a cathode array needle tube (14); the electrolyte tank (25) is also connected with a second one-way valve (36), and the second one-way valve (36) filters the redundant electrolyte through a filter (35) and then flows into the electrolyte tank (34).
8. The laser electrolysis back-to-back cooperative drilling system according to claim 3, wherein the cathode array needle tubes (14) are plural, and the positions of the plural cathode array needle tubes (14) corresponding to the semiconductor material (12) are positions to be drilled on the semiconductor material (12); the depth of the holes punched in the semiconductor material (12) by electrolysis is controlled by a computer (23), and holes with a cavity structure (39) or holes with an inclined hole structure (37) can be punched on the lower end face of the semiconductor material (12) in the laser-assisted electrolysis punching process.
9. A laser electrolytic back-to-back cooperative trepanning system according to claim 3, wherein the cathode array needle tubes (14) are coated with an insulating layer (38) at locations other than the needle locations.
10. The laser electrolysis back-to-back cooperative trepanning system according to claim 3, wherein the electrolyte (16) is a high-concentration neutral saline solution with a mass fraction of 10-30%; or alkali solution with the mass fraction of 4-10 percent; the laser (1) is a nanosecond pulse laser or a picosecond pulse laser.
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