CN114523165B - Laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on semiconductor material - Google Patents
Laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on semiconductor material Download PDFInfo
- Publication number
- CN114523165B CN114523165B CN202210156476.9A CN202210156476A CN114523165B CN 114523165 B CN114523165 B CN 114523165B CN 202210156476 A CN202210156476 A CN 202210156476A CN 114523165 B CN114523165 B CN 114523165B
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- ultrasonic
- processing
- processing head
- ultrasonic processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 239000000463 material Substances 0.000 title claims abstract description 96
- 238000003672 processing method Methods 0.000 title abstract description 7
- 239000002131 composite material Substances 0.000 title abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000003792 electrolyte Substances 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 18
- 238000003754 machining Methods 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 230000026683 transduction Effects 0.000 claims description 3
- 238000010361 transduction Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 14
- 230000005518 electrochemistry Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 8
- 238000005868 electrolysis reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005363 electrowinning Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H11/00—Auxiliary apparatus or details, not otherwise provided for
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The invention discloses a laser enhanced ultrasonic electrolytic composite processing method and a device for preparing array holes on a semiconductor material, which belong to the technical field of special processing, and the method utilizes high-frequency vibration of an ultrasonic processing head to drive suspended micro-abrasive particles in electrolyte to impact the semiconductor material so as to realize the removal of the material at a designated position; meanwhile, the ultrasonic processing head is used as a cathode to carry out electrolytic processing on the semiconductor material, so that ultrasonic-electrolytic localized combined processing is realized. The method of the invention utilizes ultrasonic vibration, abrasive particles, electrochemistry and laser to rapidly process the micropore structure on the back of the workpiece. The device is used for realizing the method, and the processing system has perfect functions and is easy to assemble and realize. The designed cathode and anode position adjusting device has simple structure and is easy to install and overhaul.
Description
Technical Field
The invention relates to the field of semiconductor material processing in special processing technology, in particular to a laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on a semiconductor material.
Background
Semiconductor materials represented by silicon and germanium are widely applied to the fields of integrated circuits, solar cells, large-size optical devices, micro-electromechanical systems and the like, and high-efficiency, precise and fine application scenes bring high requirements for high-quality processing of the materials. Taking integrated circuit manufacturing as an example, through Silicon Via (TSV) is a new technical solution for stacking chips in a three-dimensional integrated circuit to realize interconnection, which can maximize the density of chips stacked in a three-dimensional direction, minimize the interconnection lines between chips, and minimize the external dimensions, and greatly improve the performance of chip speed and low power consumption, and is one of the most attractive technologies in the current electronic packaging technology. The processing of through-holes on a wafer is the core of TSV technology, and currently there are two main techniques for processing through-holes, namely Deep Reactive Ion Etching (DRIE) and laser drilling. DRIE is an ion enhanced chemical reaction, and an etching system uses an RF powered plasma source to obtain ions and chemically reactive radicals, which are accelerated by an electric field to impact a wafer with strong directivity, to achieve high-rate etching in an unprotected area along a specified direction, and to introduce additional gas to passivate the sidewall of a protection hole to obtain a highly anisotropic etching effect. However, in the etching, as the etching depth increases, it is difficult to discharge some of the reactants and products formed in the deep silicon hole in time, which causes a large damage to the surface, causes contamination, and is difficult to form a fine pattern, and the cost is high.
The photo-punching does not need a mask, so that the process steps of photoresist coating, photoetching exposure, developing, photoresist removal and the like are avoided, and great progress is made. Laser drilling, however, has its drawbacks, such as: if the material is melted and then quickly solidified, spherical nodules are easy to form on the surface of the through hole; the roughness of the inner wall of the through hole is larger, and a continuous silicon insulating layer is difficult to deposit; the subsurface thermal damage of the inner wall of the through hole is large, and the reliability of the filled hole is affected; and the dimensional accuracy of the manufactured through holes is low. Therefore, laser drilling alone cannot meet the future requirement of processing through holes with smaller apertures and high depth-to-diameter ratios.
Currently, silicon mirrors, solar panels, and the like are used for reducing semiconductor materials. Silicon mirrors are a critical component of reflective optical systems, which are required not only to meet the optical application requirements, but also to be lightweight. Ultrasonic processing has become the first choice for processing hard and brittle materials with its unique advantages. In order to reduce the weight of the silicon mirror, a large number of special-shaped blind holes are required to be manufactured on the silicon mirror, and the thinner the ribs are, the better the ribs are, the scheme can effectively solve the problems, and the large-size manufacturing of micro holes and micro pit structures on a semiconductor can be realized in theory.
Through the search of the prior art, the Chinese patent with the authority of bulletin number of CN101572231A discloses a method and a device for forming a semiconductor vertical through hole, and the processing of the semiconductor vertical through hole is realized through micro electric spark discharge, micro electrochemical polishing and side wall passivation processes, but three processes are sequentially used in the method, the steps are complicated, and the discussion of group hole processing is not related. The Chinese patent with the publication number of CN109732199B discloses a laser electrochemical back-facing collaborative micro-processing method of a semiconductor material, which utilizes a cathode copper plate to provide a uniform electric field, utilizes a forward laser thermal effect localization to improve the conductivity of the semiconductor material such as silicon, germanium and the like, and forms a localization-to-point channel through which current preferentially passes, thereby realizing localized electrolysis on the back surface of the material. However, this method is difficult to machine deep holes with large depth-to-diameter ratio due to the specific characteristics such as thermal diffusion and electrolytic inherent stray corrosion.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on a semiconductor material, and aiming at the characteristic of high hard brittleness of the semiconductor material, a micropore structure is rapidly processed on the back of a workpiece by utilizing ultrasonic vibration, abrasive particles, electrochemistry and laser.
The present invention achieves the above technical object by the following means.
A method for processing array hole structure on semiconductor material, which uses ultrasonic processing head high frequency vibration to drive suspended micro abrasive particles in electrolyte to impact semiconductor material to realize the material removal at the appointed position; meanwhile, the ultrasonic processing head is used as a cathode to carry out electrolytic processing on the semiconductor material, so that ultrasonic-electrolytic localized combined processing is realized.
In the scheme, laser irradiation is introduced into the semiconductor material, and the conductivity of the semiconductor material is locally improved by utilizing the photo-thermal and photoelectric effects of the laser, so that the electrolytic machining efficiency is locally improved; meanwhile, the micro-abrasive particles impact to effectively destroy the passivation layer generated in the electrolytic machining process, ensure that the electrolytic machining is continuously and efficiently carried out, and have micro-polishing effect on the machined surface.
In the scheme, the ultrasonic processing head is made of conductive materials, is laterally insulated and only has conductive ends.
In the above scheme, the semiconductor material is a semiconductor material with conductivity positively correlated with temperature.
In the above scheme, the semiconductor material is monocrystalline silicon or monocrystalline germanium.
In the scheme, the ultrasonic processing head vibrates at high frequency in the ultrasonic processing process, the distance between the ultrasonic processing head and the semiconductor material changes periodically, and the electrolytic processing is changed from a conventional continuous form to an intermittent pulsation form, so that the processing precision is improved.
In the scheme, array blind hole processing with different depths can be realized by changing the amplitude of the ultrasonic processing head; by controlling the effective residence time of the ultrasonic processing head end near the specified depth position, a special hole structure can be processed.
A processing device for a method for processing an array hole structure on a semiconductor material, comprising a workpiece clamp groove, a working groove, an ultrasonic processing head and a laser processing device; the laser processing device is used for providing laser light and heat for processing; the semiconductor material is arranged at the bottom of the workpiece clamp groove, the semiconductor material is positioned through the flexible annular fixed gasket, the workpiece clamp groove is arranged in the working groove, electrolyte is arranged in the working groove, and the electrolyte is internally provided with abrasive materials; the bottom of the workpiece holder groove is provided with a hole, and the ultrasonic processing head penetrates through the working groove and enters the workpiece holder groove to process the semiconductor material by ultrasonic vibration.
In the scheme, the ultrasonic processing head is arranged on the flexible sealing sleeve, the flexible sealing sleeve is used for containing electrolyte flowing out of the working groove, the flexible sealing sleeve is connected between the base of the ultrasonic processing head and the working groove, the base of the ultrasonic processing head is connected with the amplitude transformer, and the amplitude transformer is connected with the ultrasonic transduction device.
In the scheme, the ultrasonic processing device also comprises a Z-axis stepping motor and an X-y workbench, wherein the Z-axis stepping motor can adjust the heights of the working groove and the workpiece clamp groove through a fixed rod so as to realize the position adjustment of the semiconductor material relative to the ultrasonic processing head; the X-y workbench is used for adjusting the relative positions of the ultrasonic processing head and the plate conductor material in the horizontal direction.
The invention has the following beneficial effects:
1. aiming at the difficult problem that high-quality micropores are difficult to process in semiconductor materials such as monocrystalline silicon, germanium and the like, a processing mode is provided, wherein ultrasonic abrasive particles are used for removing materials as main materials, laser is used for stimulating semiconductor electrolytic processing as auxiliary materials, and mutual coupling is adopted; the high quality and high depth-to-diameter ratio micropore array is obtained by feeding the needle cutter.
2. In the ultrasonic abrasive machining process, the surface of the workpiece material is gradually broken by the hammering action of the abrasive which is released in the liquid between the workpiece and the workpiece to the machined surface, and the macroscopic acting force and the thermal influence of the tool on the workpiece are small, so that the thin-wall, narrow-slit and thin-sheet workpiece can be machined, and the passivation layer of the semiconductor material can be removed firstly by the impact of abrasive particles.
3. In the electrochemical auxiliary processing process of the laser-stimulated semiconductor, laser is alternately irradiated to the corresponding area of the needle cutter according to program setting, so that the conductivity of the semiconductor is improved, the electrolysis rate is improved due to the removal of the passivation layer, the influence of a recast layer and residual stress around micropores is reduced, and the high-quality micropore processing of the semiconductor material is matched with an ultrasonic processing experiment.
4. The method couples the electrolytic machining with the ultrasonic machining, utilizes the high-frequency vibration of the ultrasonic machining head with special design to drive the suspended micro-abrasive particles in the electrolyte to impact the semiconductor material at high speed, and simultaneously takes the ultrasonic machining head as a cathode to carry out the electrolytic machining on the anode semiconductor so as to realize the synergy of ultrasonic-electrolytic coupling. In order to improve the electrolytic machining efficiency, laser irradiation is introduced to the upper surface of the machining position, and the photo-thermal and photoelectric effects of the laser irradiation are utilized to locally improve the conductivity of the semiconductor material, so that the electrolytic machining efficiency is greatly improved; meanwhile, the passivation layer can be effectively damaged by micro-abrasive particle impact, so that the electrolytic machining is ensured to be continuously carried out, and the micro-polishing effect is provided for the machined surface, so that the quality of the machined surface is further improved; the introduction of ultrasonic vibration changes the electrolytic machining from a conventional continuous form into an intermittent pulsation form, and can effectively promote the flow field update and the product discharge. A set of laser-assisted ultrasonic electrolytic coupling processing device is designed and mainly comprises an ultrasonic vibration system, an electrolytic processing system, an optical path system and a monitoring system. The method can obtain high-quality array through holes, blind holes and special-shaped hole structures with no recast layer, small residual stress and high depth-diameter ratio.
5. In the electrolysis process, a large amount of bubbles and impurities can be generated in the electrolysis process, the influence of the bubbles and the impurities can be effectively removed by ultrasonic vibration, and the quality and the speed of micropore processing are improved.
6. The invention can obtain special high-quality structure on semiconductor material by changing the ultrasonic processing head into different shapes.
7. The processing system of the invention has perfect functions and is easy to assemble and realize. The designed cathode and anode position adjusting device has simple structure and is easy to install and overhaul.
Drawings
FIG. 1 is a schematic diagram of an apparatus for laser-controlled electrochemical assisted ultrasonic processing of semiconductors;
FIG. 2 is a partially enlarged and machined schematic illustration of FIG. 1;
FIG. 3 is a schematic view of a shaped hole obtained by the method of the present invention.
The reference numerals are as follows:
1-a computer; a 2-pulse laser; 3-laser beam; a 4-mirror; 5-focusing lens; 6-a motion controller; 7-a filter; 8-micropump; 9-electrolyte; 10-an electrolyte recovery tank; 11-a machine tool base; a 12-X-y table; 13-an amplitude transformer; 14-an ultrasonic transducer; 15-an ultrasonic generator; 16-cathode lead; 17-anode lead; 18-oscilloscopes; 19-pulse power supply; 20-a machine tool upright; 21-a guide rail; a 22-Z axis stepper motor; 23-a workpiece holder slot; 24-rivet; 25-fixing rod; 26-a flexible annular securement washer; 27-semiconductor material; 28-working groove; 29-an ultrasonic processing head; 30-a flexible sealing sleeve; 31-a throttle valve; 32-microwells.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "axial," "radial," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
A method for processing array hole structure on semiconductor material uses ultrasonic processing head 29 with special shape to drive suspended micro-abrasive particles in electrolyte to impact semiconductor material 27 at high speed to realize material removal at specified position; meanwhile, the ultrasonic processing head 29 is made of conductive material, and is laterally insulated and only conductive at the end, and is used as a cathode for electrolytic processing of the semiconductor material 27, so that ultrasonic-electrolytic localized combined processing is realized. In order to improve the electrolytic machining efficiency, laser irradiation is introduced to the corresponding position above the machining position of the lower surface of the semiconductor material 27, the conductivity of the semiconductor material is locally improved by utilizing the photo-thermal and photoelectric effects of the laser, and the electrolytic machining efficiency is greatly locally improved; meanwhile, the micro-abrasive particles impact to effectively destroy the passivation layer generated in the electrolytic machining process, ensure that the electrolytic machining is continuously and efficiently carried out, have micro-polishing effect on the machined surface, and further improve the quality of the machined surface.
The semiconductor material 27 is a semiconductor material having a positive electrical conductivity with respect to temperature, and may be monocrystalline silicon or monocrystalline germanium.
Through the earlier stage tool setting step, the laser beam 3 ensures that the irradiation position and the shape of the ultrasonic processing head 29 are strictly up and down corresponding through localized scanning, so that a localized high-temperature region is formed at the position of the ultrasonic processing head 29 corresponding to the material, the localized enhanced conductivity is realized, and the ultrasonic processing head 29 is matched to realize efficient group hole processing.
The ultrasonic processing head 29 vibrates at high frequency in the ultrasonic processing process, the distance between the processing head and the semiconductor material changes periodically, the electrolytic processing is changed from a conventional continuous form into an intermittent pulse form, the hole type processing precision can be effectively improved, the flow field update and the product discharge are promoted, the stray corrosion is reduced, and the effective performance of ultrasonic processing and electrolysis is ensured. Meanwhile, array blind holes with different depths can be processed by changing the amplitude.
The amplitude of the ultrasonic vibration can be controlled to vary according to a predetermined law, and a special hole structure can be machined by controlling the effective residence time of the end of the ultrasonic machining head 29 near the specified depth position. For example: through the linear increase of the amplitude, the hole is developed to the longitudinal depth, the amplitude increase is stopped at a certain amplitude, a certain processing time is kept, and a cavitation structure can be formed at the bottom of the hole; this process is repeated (linear increase, hold, linear increase, hold). The holes can be processed into a shape like a sugarcoated haw or an inverted pine tree as shown in figure 3.
The electrolyte 9 with abrasive particles is high-concentration neutral saline solution, and the mass fraction is 10% -30%; alkaline or acid solution can be used according to the requirement, the mass fraction is 4% -10%, and the abrasive particles are mainly super-hard abrasive particles in submicron order.
Aiming at hole pattern processing with different cross-sectional shapes and different sizes, the laser enhanced ultrasonic-electrolytic composite processing can be realized by only preparing ultrasonic processing heads 29 with corresponding shapes and corresponding sizes and combining laser localized scanning irradiation on the upper surface, so as to prepare square hole, special-shaped hole and other hole arrays, and the application range of the hole size is from tens of micrometers to tens of millimeters.
A method of processing a microporous structure on a semiconductor wafer, using a laser beam 3 to irradiate at a position corresponding to an ultrasonic processing head 29 and to substantially excite the electrical conductivity of a semiconductor material 27; the laser beam emitted by the pulse laser 2 is focused by the optical path transmission system and the focusing lens 5 and irradiates the upper surface of the semiconductor wafer, so that obvious ablation reaction does not occur; meanwhile, the negative electrode and the positive electrode of the direct current pulse power supply 19 are respectively connected with the ultrasonic processing head 29 and the semiconductor wafer, the power supply is connected, the ultrasonic processing head 29 is kept opposite to the laser ablation area, and the electrochemical matching ultrasonic processing method is adopted to prepare the micropore structure with high quality, no recast layer and no residual stress.
Drawing a motion path model and inputting the motion path model into the computer 1; the semiconductor material 27 is selected to be a semiconductor wafer;
Surface pretreatment is carried out on the semiconductor wafer;
The semiconductor wafer is fixed in the workpiece fixture groove 23, the ultrasonic processing head 29 is connected with the negative electrode of the direct current pulse power supply 19 and is connected with the ultrasonic transducer 14 to be placed below the semiconductor wafer, the semiconductor wafer is connected with the positive electrode of the direct current pulse power supply 19, the electrolyte 9 with abrasive particles is added, the lower surface of the semiconductor wafer and the ultrasonic processing head 29 are immersed in the electrolyte 9, and when the power is on, the semiconductor wafer and the ultrasonic processing head 29 form an electrochemical loop in the electrolyte;
the working groove 28 is arranged on the fixed rod 25 of the moving platform, and the height of the Z-axis moving platform is adjusted to focus laser on the upper surface of the semiconductor wafer;
Starting the micro pump 8 to circularly change the liquid, and ensuring the concentration of the solution in the working tank 28 to be uniform;
Starting an ultrasonic device to enable an amplitude transformer 13 connected to an ultrasonic transducer 14 to drive an ultrasonic processing head 29 to vibrate abrasive particles in the solution to start working;
The pulse laser 2 is started to irradiate back and forth at the position corresponding to the ultrasonic processing head 29 according to a specified line, so that the conductivity of the semiconductor is greatly improved;
and (3) starting a direct current pulse power supply, and enabling charged metal ions in the electrolyte to perform electrochemical reduction reaction on the surface of the semiconductor wafer.
According to the set motion path, the X-y workbench 12 and the Z-axis stepping motor 22 are controlled by the motion controller to continuously process the semiconductor wafer, so that synchronous and rapid processing of the micropore structure is realized.
An apparatus for processing a microporous structure on a semiconductor wafer includes a laser irradiation system, a processing system, and a control system; the laser irradiation system comprises a pulse laser 2, a reflecting mirror 4 and a focusing lens 5; the laser beam 3 is emitted by the pulse laser 2, the transmission direction is changed through the reflecting mirror 4, and then the laser beam 3 is focused through the focusing lens 5, and the focused laser beam 3 is irradiated on the semiconductor wafer; the processing system comprises a pulse power supply 19, a working groove 28, a workpiece clamp groove 23, a semiconductor wafer, a flexible annular fixed gasket 26, an ultrasonic processing head 29, a flexible sealing sleeve 30, an amplitude transformer 13, an ultrasonic transducer 14, an ultrasonic generator 15, an X-y workbench 12, a machine tool upright post 20, a machine tool base 11, a guide rail 21 and a Z-axis stepping motor 22; the semiconductor wafer is held in the workpiece holder slot 23 by a flexible retaining washer 27; the working groove 28 and the workpiece clamp groove 23 are arranged on the fixed rod 25; the flexible annular stationary washer 26 is connected to a flexible sealing sleeve 30; the negative electrode of the pulse power supply 19 is connected with the ultrasonic processing head 29, and the positive electrode is connected with the semiconductor wafer; the lower surface of the semiconductor wafer and the lower end of the ultrasonic processing head 29 are immersed in electrolyte, and the semiconductor wafer and the ultrasonic processing head 29 form an electrochemical loop in the electrolyte; the control system comprises a computer 1 and a motion controller 6, wherein the computer 1 controls the pulse laser 2 and the Z-axis stepping motor 22; the motion controller 6 controls the X-y motion stage 12.
The laser beam 3 is focused 2-10 mm higher than the upper part of the semiconductor material 27; the voltage of the pulse power supply 19 can be adjusted to be 0-50V, the frequency is consistent with the laser parameters, and the duty ratio is 0-80%.
The pulse laser 2 is a nanosecond pulse laser or a picosecond pulse laser.
A processing apparatus for a method of processing an array hole structure on a semiconductor material, comprising a work holder slot 23, a work slot 28, an ultrasonic processing head 29, and a laser processing apparatus; the laser processing device is used for providing laser light and heat for processing; the semiconductor material 27 is arranged at the bottom of the workpiece clamp groove 23, the semiconductor material 27 is positioned through the flexible annular fixed gasket 26, the workpiece clamp groove 23 is arranged in the working groove 28, the working groove 28 is internally provided with the electrolyte 9, and the electrolyte 9 is internally provided with the abrasive; the bottom of the work holder slot 23 is provided with a hole, and an ultrasonic processing head 29 penetrates through the work slot 28 and enters the work holder slot 23 to process the semiconductor material 27 by ultrasonic vibration.
The ultrasonic processing head 29 is arranged on the flexible sealing sleeve 30, the flexible sealing sleeve 30 is used for bearing the electrolyte 9 flowing out of the working groove 28, the flexible sealing sleeve 30 is arranged at the end part of the amplitude transformer 13, and the amplitude transformer 13 is connected with an ultrasonic transduction device.
The device also comprises a Z-axis stepping motor 22 and an X-y workbench 12, wherein the Z-axis stepping motor 22 can adjust the heights of a working groove 28 and a workpiece clamp groove 23 through a fixed rod 25 so as to realize the position adjustment of the semiconductor material 27 relative to an ultrasonic processing head 29; the X-y stage 12 is used to adjust the relative position of the ultrasonic processing head 29 and the semiconductor material 27 in the horizontal direction.
Referring to fig. 1, a computer 1 is connected to a pulse laser 2 and a Z-axis stepper motor 22, respectively. The computer 1 can control the laser parameters of the pulse laser 2 and the feeding of the Z-axis stepping motor 22, and the motion of the X-y motion platform 12 is controlled by the motion controller 6. The work holder groove 23 and the work groove 28 are mounted on the fixed rod 25 through the rivet 24, and the fixed rod 25 is connected with the guide rail 21 and controlled by the Z-axis stepping motor 22. The semiconductor material 27 is held in the workpiece holder groove 23 by a flexible annular retaining washer 26. On the machine bed 11, an ultrasonic transducer 14 connected to an ultrasonic generator 15 is fixed to the X-y motion stage 12, and above the ultrasonic transducer 14 is a horn 13 and an ultrasonic processing head 29. The negative electrode of the pulse power supply 19 is connected with an ultrasonic processing head 29, the positive electrode is connected with a semiconductor wafer, and the oscilloscope 18 is connected with the pulse power supply 19 to monitor current parameters in real time. The negative electrode of the pulse power supply 19, the cathode 29 of the needle cutter, the electrolyte, the semiconductor material 27 and the negative electrode of the pulse power supply 19 form a loop, so that the electrochemical reaction can be carried out. The laser beam is emitted by the pulse laser 2, changes the transmission direction through the reflecting mirror 4, passes through the focusing lens 5 and penetrates the electrolyte to be focused on the upper surface of the semiconductor material 27, and the computer 1 controls the position of the laser beam 3 to correspond to the ultrasonic processing head 29 and controls the Z-axis stepping motor 22 to feed the semiconductor material 27 downwards. The electrolyte 9 with the abrasive is stored in the electrolyte recovery tank 10, the micro pump 8 supplies power to convey the electrolyte 9 with the abrasive from the electrolyte recovery tank 10 to the working tank 28 through the filter 7, and the electrolyte flows back to the electrolyte recovery tank 10 through the throttle valve 31 to realize circulation. During the electrowinning process, the optimum parameters for machining microwells 32 can be found by adjusting the voltage of pulsed power supply 19 and the frequency of ultrasonic generator 15.
Referring to fig. 2, the laser beam 3 irradiates the upper surface of the semiconductor material 27 to greatly improve the conductivity of the semiconductor material 27, the lower surface of the semiconductor material 27 contacts with the electrolyte 9 with abrasive grains, the abrasive grains realize fixed-point material removal under the hammering action of the ultrasonic processing head 29, and the ultrasonic processing head 29 and the laser beam 3 correspond to each other and serve as a cathode, so that the electrolyte 9 is not leaked outside during ultrasonic vibration under the protection of the flexible sealing sleeve 30. The above conditions allow efficient removal of material with coupled electrolysis and sonication.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives, and variations may be made in the above embodiments by those skilled in the art without departing from the spirit and principles of the invention.
Claims (6)
1. A method for processing an array hole structure on a semiconductor material, which is characterized by using a device for processing the array hole structure by using the semiconductor material, wherein the device specifically comprises an X-y workbench (12), a Z-axis stepping motor (22), a workpiece clamp groove (23), a working groove (28), an ultrasonic processing head (29) and a laser processing device; the laser processing device is used for providing laser light and heat for processing; the semiconductor material (27) is arranged at the bottom of the workpiece clamp groove (23), the semiconductor material (27) is positioned through the flexible annular fixed gasket (26), the workpiece clamp groove (23) is arranged in the working groove (28), the working groove (28) is internally provided with the electrolyte (9), and the electrolyte (9) is internally provided with the abrasive; a hole is formed in the bottom of the workpiece clamp groove (23), and an ultrasonic processing head (29) penetrates through the working groove (28) to enter the workpiece clamp groove (23) for ultrasonic vibration processing of the semiconductor material (27); the ultrasonic processing head (29) is arranged on the flexible sealing sleeve (30), the flexible sealing sleeve (30) is used for bearing electrolyte (9) flowing out of the working groove (28), the flexible sealing sleeve (30) is connected between the base of the ultrasonic processing head (29) and the working groove (28), the base of the ultrasonic processing head (29) is connected with the amplitude transformer (13), and the amplitude transformer (13) is connected with the ultrasonic transduction device; the Z-axis stepping motor (22) adjusts the heights of the working groove (28) and the workpiece clamp groove (23) through the fixing rod (25) so as to realize the position adjustment of the semiconductor material (27) relative to the ultrasonic processing head (29); the X-y workbench (12) is used for adjusting the relative position of the ultrasonic processing head (29) and the semiconductor material (27) in the horizontal direction; the method comprises the following specific steps: the ultrasonic processing head (29) is used for driving the suspended micro-abrasive particles in the electrolyte to impact the semiconductor material (27) by high-frequency vibration so as to realize the material removal at a designated position; simultaneously, the ultrasonic processing head (29) is used as a cathode to carry out electrolytic processing on the semiconductor material (27), so that ultrasonic-electrolytic localized combined processing is realized; introducing laser irradiation to the semiconductor material (27), and utilizing laser photo-thermal and photoelectric effect to locally improve the conductivity of the semiconductor material, so that the electrolytic machining efficiency is locally improved; meanwhile, the micro-abrasive particles impact to effectively destroy the passivation layer generated in the electrolytic machining process, ensure that the electrolytic machining is continuously and efficiently carried out, and have micro-polishing effect on the machined surface.
2. Method of processing an array of hole structures in a semiconductor material according to claim 1, characterized in that the ultrasonic processing head (29) is made of an electrically conductive material and is laterally insulated, only end-on electrically conductive.
3. A method of fabricating an array well structure on a semiconductor material according to claim 1, wherein the semiconductor material (27) is a semiconductor material having a positive electrical conductivity dependence on temperature.
4. A method of fabricating an array pore structure on a semiconductor material according to claim 3, wherein the semiconductor material (27) is monocrystalline silicon or monocrystalline germanium.
5. A method of fabricating an array-well structure in a semiconductor material according to claim 1, wherein the ultrasonic processing head (29) is vibrated at high frequency during the ultrasonic processing, the ultrasonic processing head (29) being periodically spaced from the semiconductor material (27) to change the electrolytic processing from a conventional continuous form to an intermittent pulsating form to thereby improve the processing accuracy.
6. The method of processing an array hole structure in a semiconductor material according to claim 1, wherein varying the amplitude of the ultrasonic processing head (29) allows for array blind hole processing of different depths; by controlling the effective residence time of the end of the ultrasonic processing head (29) near the specified depth position, a specific hole structure can be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210156476.9A CN114523165B (en) | 2022-02-21 | 2022-02-21 | Laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210156476.9A CN114523165B (en) | 2022-02-21 | 2022-02-21 | Laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114523165A CN114523165A (en) | 2022-05-24 |
| CN114523165B true CN114523165B (en) | 2024-05-17 |
Family
ID=81625744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210156476.9A Active CN114523165B (en) | 2022-02-21 | 2022-02-21 | Laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114523165B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115194271B (en) * | 2022-08-23 | 2024-05-03 | 深圳技术大学 | Laser and electrochemical composite polishing device for 3D printing metal component |
| CN117620440A (en) * | 2023-11-24 | 2024-03-01 | 无锡物联网创新中心有限公司 | High-speed laser etching system and method for processing through silicon vias |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02303724A (en) * | 1989-05-19 | 1990-12-17 | Akio Nakano | Ultrasonic machining method |
| CN1824444A (en) * | 2006-01-20 | 2006-08-30 | 南京航空航天大学 | Ultrasonic electrolysis compounding micro processing method and device |
| CN201235433Y (en) * | 2008-07-29 | 2009-05-13 | 扬州大学 | Composite synchronous supersonic vibration fine electrolytic machining apparatus |
| CN102513622A (en) * | 2011-11-09 | 2012-06-27 | 扬州大学 | Micro and fine machining method for material difficult to machine and machining system |
| CN104942388A (en) * | 2015-06-17 | 2015-09-30 | 江苏大学 | Device and method for machining materials by combining electrochemical discharging and laser |
| CN105364236A (en) * | 2015-11-27 | 2016-03-02 | 扬州大学 | Ultrasonic-modulation micro electro-chemical machining experiment system |
| CN106424987A (en) * | 2016-12-06 | 2017-02-22 | 江苏大学 | Method and device for coaxial combined machining with tubular electrode discharging and laser irradiation |
| CN108705164A (en) * | 2018-05-04 | 2018-10-26 | 山东大学 | Rotary ultrasonic assist electrochemical grinding reaming processing unit (plant) and method |
-
2022
- 2022-02-21 CN CN202210156476.9A patent/CN114523165B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02303724A (en) * | 1989-05-19 | 1990-12-17 | Akio Nakano | Ultrasonic machining method |
| CN1824444A (en) * | 2006-01-20 | 2006-08-30 | 南京航空航天大学 | Ultrasonic electrolysis compounding micro processing method and device |
| CN201235433Y (en) * | 2008-07-29 | 2009-05-13 | 扬州大学 | Composite synchronous supersonic vibration fine electrolytic machining apparatus |
| CN102513622A (en) * | 2011-11-09 | 2012-06-27 | 扬州大学 | Micro and fine machining method for material difficult to machine and machining system |
| CN104942388A (en) * | 2015-06-17 | 2015-09-30 | 江苏大学 | Device and method for machining materials by combining electrochemical discharging and laser |
| CN105364236A (en) * | 2015-11-27 | 2016-03-02 | 扬州大学 | Ultrasonic-modulation micro electro-chemical machining experiment system |
| CN106424987A (en) * | 2016-12-06 | 2017-02-22 | 江苏大学 | Method and device for coaxial combined machining with tubular electrode discharging and laser irradiation |
| CN108705164A (en) * | 2018-05-04 | 2018-10-26 | 山东大学 | Rotary ultrasonic assist electrochemical grinding reaming processing unit (plant) and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114523165A (en) | 2022-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114523165B (en) | Laser enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on semiconductor material | |
| WO2020172835A1 (en) | Method and apparatus for using laser and electrochemistry to micromachine back of semiconductor material | |
| CN108145307B (en) | Method for producing SiC wafer | |
| JP7166893B2 (en) | Wafer generation method | |
| CN101249580B (en) | Electrochemistry-laser mask focusing micro etch method for processing and device thereof | |
| CN111360345B (en) | Processing method for forming microstructure on surface of workpiece and control system | |
| CN112475495B (en) | Preparation method of cross-size micro-nano structure array | |
| CN112176383A (en) | Device and method for composite processing by laser electrodeposition | |
| JP2022025566A (en) | Si substrate generation method | |
| CN110561627B (en) | Cutting processing device and method applied to boron carbide | |
| CN110280915B (en) | Laser drilling device and method for improving hole making quality based on underwater drilling | |
| CN113146066A (en) | Laser electrolysis back collaborative group hole punching method and system | |
| CN112207376B (en) | Array tubular anode assisted laser electrochemical composite processing method and device based on variable electric field | |
| CN115007958A (en) | Electrode system of liquid-guided laser-electrolytic combined machining tool and milling method | |
| CN114273790A (en) | Femtosecond laser processing device and method for etching gallium nitride in liquid phase | |
| CN114346337B (en) | Abrasive particle-assisted laser electrolysis self-coupling collaborative alignment punching method and system | |
| CN111702337A (en) | Method and device for improving laser etching quality by aid of solid electrolyte | |
| CN112222549B (en) | Device and method for laser-electrochemical composite drilling of inclined magnetic cathode plate | |
| CN218487397U (en) | Electric discharge machining apparatus | |
| CN116372293A (en) | Ultrasonic vibration and light-operated electrolytic composite processing method and device based on repairable conductive ice tool | |
| JPH11197950A (en) | Small-diameter hole working device for printed circuit board | |
| CN115194271B (en) | Laser and electrochemical composite polishing device for 3D printing metal component | |
| US20230415252A1 (en) | Electrical discharge machining apparatus | |
| CN118028941A (en) | Femtosecond laser induced regulation and control localized electrodeposition microstructure additive manufacturing method | |
| TWM652923U (en) | Electrical discharge machining apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhu Hao Inventor after: Jiang Zixuan Inventor after: Wang Chao Inventor after: Du Wenwu Inventor after: Zhang Min Inventor before: Request for anonymity Inventor before: Zhu Hao Inventor before: Wang Chao Inventor before: Du Wenwu Inventor before: Zhang Min |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |