CN114523165A - Laser-enhanced ultrasonic electrolytic composite processing method and device for preparing array holes in semiconductor material - Google Patents
Laser-enhanced ultrasonic electrolytic composite processing method and device for preparing array holes in semiconductor material Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
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Abstract
The invention discloses a laser-enhanced ultrasonic electrolytic composite machining method and device for preparing array holes on a semiconductor material, belonging to the technical field of special machining, wherein suspended micro-abrasive particles in electrolyte are driven by high-frequency vibration of an ultrasonic machining head to impact the semiconductor material to remove the material at a specified position; meanwhile, the ultrasonic processing head is used as a cathode to carry out electrochemical processing on the semiconductor material, so that the ultrasonic-electrolytic localized composite processing is realized. The method of the invention utilizes ultrasonic vibration, abrasive particles, electrochemistry and laser to rapidly process a micropore structure on the back of the workpiece. The device is used for realizing the method, and the processing system has complete functions and is easy to assemble and realize. The designed cathode and anode position adjusting device is simple in structure and easy to install and overhaul.
Description
Technical Field
The invention relates to the field of semiconductor material processing in a special processing technology, in particular to a laser-enhanced ultrasonic electrolytic composite processing method and a laser-enhanced ultrasonic electrolytic composite processing device for preparing array holes in a semiconductor material.
Background
Semiconductor materials represented by silicon and germanium are widely applied to the fields of integrated circuits, solar cells, large-size optical devices, micro-electro-mechanical systems and the like, and high-efficiency, precise and fine application scenes put high requirements on high-quality processing of the materials. Taking integrated circuit manufacturing as an example, Through Silicon Via (TSV) technology is a new technical solution for realizing interconnection of stacked chips in a three-dimensional integrated circuit, can maximize the stacking density of chips in the three-dimensional direction, minimize the interconnection lines between the chips, minimize the overall dimension, and greatly improve the performance of chip speed and low power consumption, and becomes the most attractive technology in the current electronic packaging technology. Through-hole processing on a wafer is the core of the TSV technology, and at present, the through-hole processing technology mainly comprises two technologies, namely Deep Reactive Ion Etching (DRIE) and laser drilling. DRIE is an ion-enhanced chemical reaction, in which an etching system uses an RF-powered plasma source to obtain ions and chemically reactive radicals, which are accelerated by an electric field to impact a wafer with strong directionality, and high-rate etching is realized in an unprotected region along a specified direction, while additional gas is introduced to passivate the sidewalls of the protective holes, so as to obtain a highly anisotropic etching effect. However, in the above etching, as the etching depth increases, it is difficult to discharge a part of the reaction product and the product formed in the silicon deep hole in time, which causes a large damage to the surface, contamination, difficulty in forming a fine pattern, and high cost.
Photo-perforating does not need a mask, so that the process steps of photoresist coating, photoetching exposure, developing, photoresist removing and the like are avoided, and great progress is made. However, laser drilling also has its disadvantages, such as: if the material is melted and then rapidly solidified, spherical nodules are easily formed on the surface of the through hole; the roughness of the inner wall of the through hole is large, and a continuous silicon insulating layer is difficult to deposit; the sub-surface thermal damage of the inner wall of the through hole is large, and the reliability of the filled hole is influenced; the accuracy of the size of the manufactured through hole is low, and the like. Therefore, laser drilling cannot independently meet the future through hole processing requirements of smaller aperture and high depth-diameter ratio.
At present, silicon mirrors, solar panels and the like are applied to semiconductor material reduction. The silicon mirror is a key component of a reflective optical system, and not only needs to meet the application requirements of optics, but also needs to be light in weight. Ultrasonic processing has its unique advantages as the first choice for processing hard and brittle materials. In order to reduce the weight of the silicon mirror, a large number of special-shaped blind holes need to be manufactured on the silicon mirror, and the thinner the rib is, the better the problem is.
The prior art is searched and found that the Chinese patent with the publication number of CN101572231A discloses a method and a device for forming a semiconductor vertical through hole, wherein the method and the device realize the processing of the semiconductor vertical through hole through micro electric spark discharge, micro electrochemical polishing and side wall passivation processes, but the method sequentially uses three processes, has more complicated steps and does not relate to the discussion of group hole processing. Chinese patent No. CN109732199B discloses a laser-electrochemical back-side cooperative micromachining method for semiconductor materials, which utilizes a cathode copper plate to provide a uniform electric field, utilizes the forward laser thermal effect to localize and improve the conductivity of semiconductor materials such as silicon and germanium, and forms a localized to-point channel through which current preferentially passes, thereby realizing localized electrolysis on the back of the material. However, it is difficult to form a deep hole having a large depth-diameter ratio by this method because of the characteristics such as thermal diffusion and electrolytic stray corrosion.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a laser-enhanced ultrasonic electrolytic composite processing method and device for preparing array holes on a semiconductor material, aiming at the characteristic of high hardness and brittleness of the semiconductor material, and a micropore structure is rapidly processed on the back of a workpiece by utilizing ultrasonic vibration, abrasive particles, electrochemistry and laser.
The present invention achieves the above-described object by the following technical means.
A method for processing an array hole structure on a semiconductor material utilizes high-frequency vibration of an ultrasonic processing head to drive suspended micro-abrasive particles in electrolyte to impact the semiconductor material to remove the material at a specified position; meanwhile, the ultrasonic processing head is used as a cathode to carry out electrolytic processing on the semiconductor material, so that the ultrasonic-electrolytic localized composite processing is realized.
In the scheme, laser irradiation is introduced to the semiconductor material, and the conductivity of the semiconductor material is improved in a localized manner by utilizing laser photo-thermal and photoelectric effects, so that the electrolytic machining efficiency is improved in a localized manner; meanwhile, the micro abrasive particle impact can effectively destroy a passivation layer generated in the electrolytic machining process, ensure that the electrolytic machining is continuously and efficiently carried out, and have a micro polishing effect on the machined surface.
In the above scheme, the ultrasonic processing head is made of a conductive material, and is laterally insulated and only end portion is conductive.
In the above scheme, the semiconductor material is a semiconductor material whose electrical conductivity is positively correlated to temperature.
In the above scheme, the semiconductor material is monocrystalline silicon or monocrystalline germanium.
In the scheme, the ultrasonic processing head vibrates at high frequency in the ultrasonic processing process, the distance between the ultrasonic processing head and the semiconductor material is changed periodically, and the electrolytic processing is changed from a conventional continuous form to an intermittent pulse form, so that the processing precision is improved.
In the scheme, array blind holes with different depths can be machined by changing the amplitude of the ultrasonic machining head; by controlling the effective dwell time of the end of the ultrasonic machining head near the specified depth location, a particular hole configuration can be machined.
The processing device of the method for processing the array hole structure on the semiconductor material comprises a workpiece clamp groove, a working groove, an ultrasonic processing head and a laser processing device; the laser processing device is used for providing laser light heat for processing; the semiconductor material is arranged at the bottom of the workpiece clamp groove, the semiconductor material is positioned through the flexible annular fixing gasket, the workpiece clamp groove is arranged in the working groove, electrolyte is arranged in the working groove, and the electrolyte is provided with abrasive materials; the bottom of the workpiece clamp groove is provided with a hole, and the ultrasonic processing head passes through the working groove and enters the workpiece clamp groove to process the semiconductor material through ultrasonic vibration.
In the scheme, the ultrasonic machining head is arranged on the flexible sealing sleeve, the flexible sealing sleeve is used for bearing electrolyte flowing out of the working groove, the flexible sealing sleeve is connected between a base of the ultrasonic machining head and the working groove, the base of the ultrasonic machining head is connected with the amplitude transformer, and the amplitude transformer is connected with the ultrasonic energy conversion device.
In the scheme, the device also comprises a Z-axis stepping motor and an X-y workbench, wherein the Z-axis stepping motor can adjust the heights of the working groove and the workpiece clamp groove through a fixing rod, so that the position of the semiconductor material relative to the ultrasonic processing head can be adjusted; the X-y stage is used to adjust the relative position of the ultrasonic machining head and the plate conductor material in the horizontal direction.
The invention has the following beneficial effects:
1. aiming at the difficult problem that high-quality micropores are difficult to process by using semiconductor materials such as monocrystalline silicon, germanium and the like, a processing mode of using ultrasonic abrasive particle removal materials as a main part and using laser stimulation semiconductor electrolytic processing as an auxiliary part and coupling the materials with each other is provided; the high quality and high depth-diameter ratio micropore array is obtained by feeding the needle cutter.
2. In the ultrasonic abrasive machining process, the workpiece material surface is gradually crushed by hammering effect of the abrasive free in liquid between the workpiece and the workpiece on the machined surface, the macroscopic acting force of a tool on the workpiece is small, the thermal influence is small, and therefore thin-wall, narrow-slit and thin-sheet workpieces can be machined, and the passivation layer of the semiconductor material can be removed firstly by impact of abrasive particles.
3. In the electrochemical auxiliary processing process of the laser-stimulated semiconductor, laser is irradiated on the corresponding area of the needle head cutter in turn according to program setting, the conductivity of the semiconductor is improved, the removal of the passivation layer improves the electrolysis speed, reduces the influence of a recast layer and residual stress around micropores, and is matched with ultrasonic processing to test the high-quality micropore processing of the semiconductor material.
4. The method couples the electrolytic machining with the ultrasonic machining, utilizes the specially designed ultrasonic machining head to drive the suspended micro-abrasive particles in the electrolyte to impact the semiconductor material at a high speed by high-frequency vibration, and simultaneously carries out the electrolytic machining on the anode semiconductor by taking the ultrasonic machining head as a cathode to realize the ultrasonic-electrolytic coupling cooperation. In order to improve the electrolytic machining efficiency, laser irradiation is introduced to the upper surface of a machining position, the photo-thermal and photoelectric effects of the laser irradiation are utilized to localize and improve the conductivity of the semiconductor material, and the electrolytic machining efficiency is greatly improved; meanwhile, the passivation layer can be effectively damaged by micro abrasive particle impact, the electrolytic machining is ensured to be continuously carried out, the micro polishing effect is realized on the machined surface, and the quality of the machined surface is further improved; the introduction of ultrasonic vibration changes the electrolytic processing from a conventional continuous form to an intermittent pulse form, and can effectively promote the updating of a flow field and the discharge of products. A set of laser-assisted ultrasonic electrolytic coupling processing device is designed, and the device mainly comprises an ultrasonic vibration system, an electrolytic processing system, a light path system and a monitoring system. The method can obtain the array through hole, blind hole and special-shaped hole structures which have no recast layer, small residual stress, high quality and high depth-diameter ratio.
5. In the electrolytic process, a large amount of bubbles and impurities are generated in the electrolytic process, the influence of the bubbles and the impurities can be effectively eliminated by ultrasonic vibration, and the quality and the speed of micropore processing are improved.
6. The invention can obtain special high-quality structure on semiconductor material by changing the ultrasonic processing head into different shapes.
7. The processing system of the invention has perfect functions and is easy to assemble and realize. The designed cathode and anode position adjusting device is simple in structure and easy to install and maintain.
Drawings
FIG. 1 is a schematic diagram of an apparatus for laser-optically controlled electrochemically-assisted ultrasonic processing of semiconductors;
FIG. 2 is an enlarged, fragmentary, and schematic view of FIG. 1;
fig. 3 is a schematic view of a shaped hole obtained by the method of the present invention.
The reference numbers are as follows:
1-a computer; 2-a pulsed laser; 3, laser; 4-a mirror; 5-a focusing lens; 6-a motion controller; 7-a filter; 8-a micropump; 9-an electrolyte; 10-an electrolyte recovery tank; 11-a machine tool base; a 12-X-y stage; 13-a horn; 14-an ultrasonic transducer; 15-ultrasonic generator; 16-a cathode lead; 17-an anode lead; 18-an oscilloscope; 19-a pulsed power supply; 20-machine tool column; 21-a guide rail; 22-Z axis stepper motors; 23-a work holder slot; 24-rivets; 25-a fixation rod; 26-a flexible annular retaining washer; 27-a semiconductor material; 28-a working tank; 29-an ultrasonic machining head; 30-a flexible sealing sleeve; 31-a throttle valve; 32-micropores.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "axial," "radial," "vertical," "horizontal," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
A method for processing an array hole structure on a semiconductor material utilizes high-frequency vibration of an ultrasonic processing head 29 with a special shape design array to drive suspended micro-abrasive particles in electrolyte to impact the semiconductor material 27 at a high speed, so as to realize material removal at a specified position; meanwhile, the ultrasonic processing head 29 is made of a conductive material, is laterally insulated and only has an end portion conductive, and is used as a cathode to carry out electrolytic processing on the semiconductor material 27, so that ultrasonic-electrolytic localized combined processing is realized. In order to improve the electrolytic machining efficiency, laser irradiation is introduced to the corresponding position above the machining position of the lower surface of the semiconductor material 27, the electric conductivity of the semiconductor material is locally improved by utilizing the photothermal and photoelectric effects of the laser, and the electrolytic machining efficiency is greatly locally improved; meanwhile, the micro abrasive particles can effectively destroy a passivation layer generated in the electrolytic machining process by impact, so that the electrolytic machining is continuously and efficiently carried out, the micro polishing effect is realized on the machined surface, and the quality of the machined surface is further improved.
The semiconductor material 27 is a semiconductor material with conductivity positively correlated to temperature, and may be monocrystalline silicon or monocrystalline germanium.
Through the early tool setting step, the laser beam 3 is scanned in a localized manner to ensure that the irradiation position strictly corresponds to the shape of the ultrasonic processing head 29 up and down, so that a local high-temperature area is formed at the position, corresponding to the material, of the ultrasonic processing head 29, the conductivity is enhanced in a localized manner, and efficient group hole processing is realized by matching with the ultrasonic processing head 29.
The ultrasonic processing head 29 vibrates at high frequency in the ultrasonic processing process, the distance between the processing head and the semiconductor material is changed periodically, the electrolytic processing is changed from a conventional continuous mode to an intermittent pulse mode, the hole pattern processing precision can be effectively improved, the flow field updating and the product discharging are promoted, the stray corrosion is reduced, and the effective operation of the ultrasonic processing and the electrolysis is ensured. Meanwhile, array blind holes with different depths can be machined by changing the amplitude.
The ultrasonic vibration amplitude can be controlled to change according to a preset rule, and a special hole structure can be machined by controlling the effective retention time of the end part of the ultrasonic machining head 29 near a specified depth position. For example: the hole develops towards the longitudinal depth through the linear increase of the amplitude, the amplitude increase is stopped at a certain amplitude, a certain processing time is kept, and a cavity structure can be formed at the bottom of the hole; this process is repeated (linear increase, hold, linear increase, hold). Can be processed into sugarcoated haws or inverted pine-shaped holes as shown in FIG. 3.
The electrolyte 9 with the abrasive particles is a high-concentration neutral saline solution, and the mass fraction of the electrolyte is 10-30%; alkaline or acid solution can be used according to the requirement, the mass fraction is 4-10%, and the abrasive particles are mainly submicron-grade superhard abrasive particles.
Aiming at the hole pattern processing with different cross section shapes and different sizes, the laser-enhanced ultrasonic-electrolytic composite processing can be realized by preparing the ultrasonic processing head 29 with the corresponding shape and the corresponding size and combining the upper surface laser localized scanning irradiation, so that hole arrays such as square holes, special-shaped holes and the like are prepared, and the hole size application range is from dozens of micrometers to dozens of millimeters.
A method for processing a micro-pore structure on a semiconductor wafer utilizes a laser beam 3 to irradiate at a position corresponding to an ultrasonic processing head 29 and greatly excite the conductivity of a semiconductor material 27; laser beams emitted by the laser 2 are irradiated on the upper surface of the semiconductor wafer through the focusing of the optical path transmission system and the lens 5, and no obvious ablation reaction occurs; meanwhile, the negative electrode and the positive electrode of the pulse power supply 19 are respectively connected with the ultrasonic processing head 29 and the semiconductor wafer, the power supply is switched on, the ultrasonic processing head 29 is kept to be opposite to a laser ablation area, and a micropore structure with high quality, no recast layer and no residual stress is prepared by adopting an electrochemical matching ultrasonic processing method.
Drawing a motion path model and inputting the motion path model into the computer 1; selecting semiconductor material 27 as a semiconductor wafer;
carrying out surface pretreatment on the semiconductor wafer;
fixing a semiconductor wafer in a workpiece clamp groove 23, connecting an ultrasonic processing head 29 with a negative electrode of a direct current pulse power supply 2, connecting an ultrasonic transducer 14 and placing below the semiconductor wafer, connecting the semiconductor wafer with a positive electrode of the direct current pulse power supply 2, adding an electrolyte 9 with abrasive particles, immersing the lower surface of the semiconductor wafer and the ultrasonic processing head 29 in the electrolyte 9, and forming an electrochemical loop in the electrolyte by the semiconductor wafer and the ultrasonic processing head 29 when the semiconductor wafer and the ultrasonic processing head 29 are electrified;
installing a working groove 28 on a moving platform fixing rod 25, and adjusting the height of the Z-axis moving platform to focus laser on the upper surface of the semiconductor wafer;
starting the micro pump 8 to circularly change the liquid, and ensuring the uniform concentration of the solution in the working tank 28;
starting an ultrasonic device to enable an amplitude transformer 13 connected to an ultrasonic transducer 14 to drive an ultrasonic processing head 29 to vibrate abrasive particles in the solution to start working;
the laser 2 is started to irradiate back and forth at the position corresponding to the ultrasonic processing head 29 according to a specified line, so that the conductivity of the semiconductor is greatly improved;
and starting the direct current pulse power supply, and carrying out electrochemical reduction reaction on the charged metal ions in the electrolyte on the surface of the semiconductor wafer.
According to the set motion path, the X-y worktable 12 and the Z-axis stepping motor 22 are controlled by the motion controller to continuously process the semiconductor wafer, so as to realize synchronous and rapid processing of the micropore structure.
An apparatus for processing a micro-porous structure on a semiconductor wafer comprises a laser irradiation system, a processing system and a control system; the laser irradiation system comprises a pulse laser 2, a reflector 4 and a focusing lens 5; the laser 3 is emitted by the pulse laser 2, the transmission direction is changed by the reflector 4, and then the laser is focused by the focusing lens 5, and the focused laser beam 3 is irradiated on the semiconductor wafer; the processing system comprises a pulse power supply 19, a working groove 28, a workpiece clamp groove 23, a semiconductor wafer, a flexible annular fixed gasket 26, a needle tool cathode 29, a flexible sealing sleeve 30, an amplitude transformer 13, a transducer 14, an ultrasonic generator 15, an X-y workbench 12, a machine tool upright column 20, a machine tool base 11, a guide rail 21 and a Z-axis stepping motor 22; the semiconductor wafer is fixed in the clamp groove 23 by a flexible fixing gasket 27; the working groove 28 and the work holder groove 23 are provided on the fixing rod 25; the needle cutter 26 is connected with a flexible sealing sleeve 30; the negative electrode of the direct current pulse power supply 19 is connected with the cathode 29 of the needle cutter, and the positive electrode of the direct current pulse power supply is connected with the semiconductor wafer; the lower surface of the semiconductor wafer and the lower end of the ultrasonic processing head 29 are immersed in the electrolyte, and the semiconductor wafer and the ultrasonic processing head 29 form an electrochemical loop in the electrolyte; the control system comprises a computer 1 and a motion controller 6, wherein the computer 1 controls a pulse laser 2 and a Z-axis stepping motor 22; the motion controller 6 controls an X-y motion stage 12.
Focusing the laser 3 to be 2-10 mm higher than the semiconductor workpiece material 27; the voltage of the pulse power supply 19 can be adjusted to 0-50V, the frequency is consistent with the laser parameters, and the duty ratio is 0-80%.
The pulse laser 2 is a nanosecond pulse laser or a picosecond pulse laser.
The processing device of the method for processing the array hole structure on the semiconductor material comprises a workpiece clamp groove 23, a working groove 28, an ultrasonic processing head 29 and a laser processing device; the laser processing device is used for providing laser light heat for processing; the semiconductor material 29 is arranged at the bottom of the workpiece clamp groove 23, the semiconductor material 29 is positioned through the flexible annular fixing gasket 26, the workpiece clamp groove 23 is arranged in the working groove 28, the electrolyte 9 is arranged in the working groove 28, and the electrolyte 9 is provided with abrasive materials; the bottom of the work holder groove 23 is provided with a hole, and an ultrasonic processing head 29 passes through the work groove 28 and enters the work holder groove 23 to process the semiconductor material 29 by ultrasonic vibration.
The ultrasonic processing head 29 is arranged on a flexible sealing sleeve 30, the flexible sealing sleeve 30 is used for bearing the electrolyte 9 flowing out of the working groove 28, the flexible sealing sleeve 30 is arranged at the end part of the amplitude transformer 13, and the amplitude transformer 13 is connected with an ultrasonic transducer.
The device also comprises a Z-axis stepping motor 22 and an X-y workbench 12, wherein the Z-axis stepping motor 22 can adjust the heights of a working groove 28 and a workpiece clamp groove 23 through a fixing rod 25 so as to realize that the position of a semiconductor material 29 relative to an ultrasonic processing head 29 is adjustable; the X-y table 12 is used to adjust the relative position of the ultrasonic processing head 29 and the plate conductor material 29 in the horizontal direction.
Referring to fig. 1, a computer 1 is connected to a pulse laser 2 and a Z-axis stepping motor 22. The computer 1 can control the laser parameters of the pulse laser 2 and the feed of the Z-axis stepping motor 22, and the motion of the X-y motion platform 12 is controlled by the motion controller 6. The work holder groove 23 and the work groove 28 are mounted on a fixing bar 25 by rivets 24, and the fixing bar 25 is connected to the guide rail 21 and controlled by a Z-axis stepping motor 22. The semiconductor material 27 is held in the work holder groove 28 by a flexible annular retaining washer 26. On the machine base 11, a transducer 14 connected to an ultrasonic generator 15 is fixed on the X-y motion stage 12, above the transducer 14 is a horn 13 and an ultrasonic machining head 29. The negative pole of the pulse power supply 19 is connected with the ultrasonic processing head 29, the positive pole is connected with the semiconductor wafer, and the oscilloscope 18 is connected with the pulse power supply 19 to monitor the current parameters in real time. The negative pole of the pulse power supply 19 → the cathode 29 of the needle cutter → the electrolyte → the semiconductor wafer 27 → the negative pole of the DC pulse power supply 19 forms a loop, so that the electrochemical reaction can proceed. The laser beam is emitted from a pulse laser 2, changes its transmission direction by a mirror 4, passes through a focusing lens 55 and penetrates an electrolyte to be focused on the upper surface of a semiconductor wafer 27, and a computer 1 controls the position of the laser 3 to correspond to an ultrasonic processing head 29 and controls a Z-axis stepping motor 22 to feed a semiconductor workpiece material 27 downward. The electrolyte 9 with abrasive is stored in the electrolyte recovery tank 10, the electrolyte 9 with abrasive is conveyed from the electrolyte recovery tank 10 to the working tank 28 by the power of the micro pump 8 through the filter 7, and the electrolyte is returned to the electrolyte recovery tank 10 through the throttle valve 31 for circulation. In the process of the electrolysis, the optimum parameters for processing the micropores 32 can be found by adjusting the voltage of the pulse power supply 19 and the frequency of the ultrasonic generator 15.
Referring to fig. 2, the laser 3 is irradiated on the upper surface of the semiconductor material 27, so that the conductivity of the semiconductor material 27 is greatly improved, the lower surface of the semiconductor material 27 is in contact with the electrolyte 9 with abrasive particles, the abrasive particles realize fixed-point material removal under the hammering action of the ultrasonic processing head 29, the ultrasonic processing head 29 and the laser 3 correspond to each other and serve as a cathode, and the electrolyte 9 is prevented from leaking out under the protection of the flexible sealing sleeve 30 during ultrasonic vibration. The conditions mentioned above allow a high removal of material with a coupling of electrolysis and ultrasonic machining.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention.
Claims (10)
1. A method for processing an array hole structure on a semiconductor material is characterized in that suspended micro-abrasive particles in electrolyte are driven to impact the semiconductor material (27) by high-frequency vibration of an ultrasonic processing head (29) to remove materials at a specified position; meanwhile, the ultrasonic processing head (29) is used as a cathode to carry out electrolytic processing on the semiconductor material (27), so that ultrasonic-electrolytic localized composite processing is realized.
2. The method for processing the array hole structure on the semiconductor material as claimed in claim 1, wherein, the laser irradiation is introduced to the semiconductor material (27), and the electric conductivity of the semiconductor material is localized and improved by using the photothermal and photoelectric effects of the laser, so that the electrolytic processing efficiency is localized and improved; meanwhile, the micro abrasive particle impact can effectively destroy a passivation layer generated in the electrolytic machining process, ensure that the electrolytic machining is continuously and efficiently carried out, and have a micro polishing effect on the machined surface.
3. Method for processing an array of hole structures in a semiconductor material according to claim 1, characterized in that the ultrasonic processing head (29) is made of an electrically conductive material and is laterally insulating and only end-conductive.
4. The method of claim 1, wherein the semiconductor material (27) has a conductivity directly related to temperature.
5. Method for processing array hole structures in a semiconductor material according to claim 4, wherein the semiconductor material (27) is monocrystalline silicon or monocrystalline germanium.
6. The method for processing the array hole structure on the semiconductor material as claimed in claim 1, wherein the ultrasonic processing head (29) vibrates at a high frequency during the ultrasonic processing, the distance between the ultrasonic processing head (29) and the semiconductor material (27) changes periodically, and the electrolytic processing is changed from a conventional continuous form to an intermittent pulse form so as to improve the processing precision.
7. The method of processing an array of hole structures in a semiconductor material as claimed in claim 1, wherein varying the amplitude of the ultrasonic processing head (29) allows for different depths of array blind hole processing; by controlling the effective dwell time of the end of the ultrasonic machining head (29) near a specified depth position, a particular hole configuration can be machined.
8. The processing device of the method for processing the array hole structure on the semiconductor material according to any one of the claims 1 to 7, characterized by comprising a work holder groove (23), a work groove (28), an ultrasonic processing head (29) and a laser processing device; the laser processing device is used for providing laser light heat for processing; the semiconductor material (29) is arranged at the bottom of the workpiece clamp groove (23), the semiconductor material (29) is positioned through a flexible annular fixing gasket (26), the workpiece clamp groove (23) is arranged in a working groove (28), electrolyte (9) is arranged in the working groove (28), and abrasive materials are arranged in the electrolyte (9); the bottom of the workpiece clamp groove (23) is provided with a hole, and an ultrasonic processing head (29) passes through the working groove (28) and enters the workpiece clamp groove (23) to process the semiconductor material (29) through ultrasonic vibration.
9. The machining device according to claim 8, characterized in that the ultrasonic machining head (29) is arranged on a flexible sealing sleeve (30), the flexible sealing sleeve (30) is used for containing the electrolyte (9) flowing out of the working tank (28), the flexible sealing sleeve (30) is connected between the base of the ultrasonic machining head (29) and the working tank (28), the base of the ultrasonic machining head (29) is connected with the amplitude transformer (13), and the amplitude transformer (13) is connected with the ultrasonic transducer.
10. The machining device as claimed in claim 8, characterized by further comprising a Z-axis stepping motor (22) and an X-y table (12), wherein the Z-axis stepping motor (22) can adjust the heights of the work groove (28) and the work holder groove (23) through a fixing rod (25) so as to realize the position adjustment of the semiconductor material (29) relative to the ultrasonic machining head (29); the X-y table (12) is used for adjusting the relative position of the ultrasonic processing head (29) and the plate conductor material (29) in the horizontal direction.
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