CN108519559A - Radio-frequency power supply detection device - Google Patents

Radio-frequency power supply detection device Download PDF

Info

Publication number
CN108519559A
CN108519559A CN201810258333.2A CN201810258333A CN108519559A CN 108519559 A CN108519559 A CN 108519559A CN 201810258333 A CN201810258333 A CN 201810258333A CN 108519559 A CN108519559 A CN 108519559A
Authority
CN
China
Prior art keywords
radio
power supply
module
frequency power
power amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810258333.2A
Other languages
Chinese (zh)
Inventor
李炎森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Nino Electronic Equipment Co Ltd
Original Assignee
Shanghai Nino Electronic Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Nino Electronic Equipment Co Ltd filed Critical Shanghai Nino Electronic Equipment Co Ltd
Priority to CN201810258333.2A priority Critical patent/CN108519559A/en
Publication of CN108519559A publication Critical patent/CN108519559A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40Testing power supplies

Abstract

The present invention discloses a kind of radio-frequency power supply detection device, the radio-frequency power supply detection device includes being set to react indoor radio-frequency power supply, the sputtering target set on radio-frequency power supply output end and the mass spectrograph that is electrically connected with radio-frequency power supply, radio-frequency power supply includes radio-frequency signal source, power amplifier module, reflectance factor detection module, impedance matching module and processor, and radio-frequency power supply is for making sputtering target sputter;Mass spectrograph reacts indoor plasma concentration for detecting;Reflectance factor detection module is used to detect the input impedance of the output impedance and power amplifier module of power amplifier module;Processor is used to control the input impedance of the output impedance and power amplifier module of impedance matching module mesh power amplification module, and for controlling power amplifier module, so that the plasma concentration of reative cell is identical as default plasma concentration.The present invention can detect according to different atmosphere and sputtering target and adjust the output power of radio-frequency power supply, to improve efficiency.

Description

Radio-frequency power supply detection device
Technical field
The present invention relates to radio frequency arts, and in particular to a kind of radio-frequency power supply detection device.
Background technology
Radio-frequency power supply is the mating power supply of plasma, it is by radio frequency power source, impedance matching box and impedance power meter Composition, is mainly used in the equipment such as radio-frequency sputtering, chemical vapor deposition, reactive ion etching.
When the output impedance in radio-frequency power supply is mismatched with input impedance, the efficiency of radio-frequency power supply can be seriously affected, also The part life in radio-frequency power supply can be influenced, so impedance matching box adjustment input impedance and output impedance is needed to match.
The difference for the atmosphere that reative cell uses, the difference of sputtering target can influence last plated film or deposition efficiency, even if Impedance matching box in the prior art is made on algorithm or circuit and being greatly improved, so that input impedance and output impedance phase Match, radio-frequency power supply shows efficiency and improves, but practical plating membrane efficiency or deposition efficiency are only capable of rule of thumb judging by laboratory technician.
Therefore, it is necessary to provide a kind of novel radio-frequency power supply detection device to solve the above technical problems.
Invention content
The main object of the present invention is to provide a kind of radio-frequency power supply detection device, it is intended to solve the practical effect of existing radio-frequency power supply The not high technical problem of rate.
To achieve the above object, radio-frequency power supply detection device proposed by the present invention includes being set to react indoor radio frequency electrical Source, the sputtering target set on the radio-frequency power supply output end and the mass spectrograph that is electrically connected with the radio-frequency power supply, the radio frequency Power supply includes radio-frequency signal source, power amplifier module, reflectance factor detection module, impedance matching module and processor, described to penetrate Frequency source signal, the power amplifier module, the reflectance factor detection module, the impedance matching module and the mass spectrograph are equal It is connect with the processor signal,
The radio-frequency power supply is for bombarding the sputtering target;
The mass spectrograph is for detecting the indoor plasma concentration of reaction;
The reflectance factor detection module is for detecting the output impedance of the power amplifier module and the power amplification The input impedance of module;
The processor is for controlling output impedance and institute that the impedance matching module matches the power amplifier module The input impedance of power amplifier module is stated, and for controlling the power amplifier module, so that the plasma of the reative cell Concentration is identical as default plasma concentration.
Preferably, the impedance matching module includes the output end for connecting the radio-frequency signal source and the power amplification mould The input adaptation of the input terminal of block, and the output matching device that is connect with the output end of the power amplifier module, it is described defeated Enter output impedance and the input impedance of the power amplifier module of the adaptation for adjusting the radio-frequency signal source to match, institute Output impedance and the input impedance of the sputtering target of the output matching device for adjusting the power amplifier module is stated to match.
Preferably, the power amplifier module includes the driving source being connected and amplifying stage, the driving source and external electrical Source connects, and the input terminal of the driving source is connected with the input adaptation, the output end of the amplifying stage and the output Adaptation is connected.
Preferably, the amplifying stage is switch power amplification module.
Preferably, the input adaptation includes being series between the radio-frequency signal source and the power amplifier module First parallel plate capacitor, second parallel plate capacitor in parallel with the radio-frequency signal source and input driver, the input driving Device for changing the pole plate relative area and second parallel plate capacitor of first parallel plate capacitor pole plate relative area.
Preferably, the input adaptation includes being series between the radio-frequency signal source and first parallel plate capacitor The first inductance.
Preferably, the output matching device includes and the concatenated third parallel-plate electricity of the output end of the power amplifier module Hold, fourth parallel plate capacitor and output driver in parallel with the output end of the power amplifier module, the output driver For changing the pole plate relative area of the pole plate relative area and the 4th parallel plate capacitor of the third parallel plate capacitor.
Preferably, the output matching device include be series at the power amplifier module output end it is parallel with the third The second inductance between plate capacitance.
Preferably, the reflectance factor detection module is two dual directional couplers, is respectively used to detection power amplification mould The incident voltage and reflected voltage of block input terminal and the power amplifier module output end.
Preferably, the radio-frequency power supply further includes the filter and signal being connect respectively with two dual directional couplers Amplifier.
In technical solution of the present invention, indoor plasma concentration is reacted by using mass spectrograph detection so that radio frequency Power supply can adjust the output power of the power amplifier module according to plasma concentration, when the output work of the power amplifier module When rate changes, the output impedance of radio-frequency power supply is adjusted by impedance matching module and input impedance is adapted, until plasma is dense Degree is identical as preset concentration, to improve deposition, plated film or the efficiency of etching.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the module diagram of one embodiment of radio-frequency power supply detection device of the present invention;
Fig. 2 is the structural schematic diagram of one embodiment of radio-frequency power supply of the present invention.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation describes, it is clear that described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Base Embodiment in the present invention, those of ordinary skill in the art obtained without creative efforts it is all its His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention In explaining relative position relation, motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being such as related to " first ", " second " in the present invention is used for description purposes only, and should not be understood as It indicates or implies its relative importance or implicitly indicate the quantity of indicated technical characteristic.Define as a result, " first ", The feature of " second " can explicitly or implicitly include at least one of the features.In the description of the present invention, " multiple " contain Justice is at least two, such as two, three etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " connection ", " fixation " etc. shall be understood in a broad sense, For example, " fixation " may be a fixed connection, it may be a detachable connection, or integral;It can be mechanical connection, can also be Electrical connection;It can be directly connected, can also can be indirectly connected through an intermediary the connection inside two elements or two The interaction relationship of a element, unless otherwise restricted clearly.It for the ordinary skill in the art, can basis Concrete condition understands the concrete meaning of above-mentioned term in the present invention.
In addition, the technical solution between each embodiment of the present invention can be combined with each other, but must be general with this field Logical technical staff can be implemented as basis, will be understood that when the combination of technical solution appearance is conflicting or cannot achieve this The combination of technical solution is not present, also not the present invention claims protection domain within.
The present invention proposes a kind of radio-frequency power supply detection device.
Referring to Fig.1 and 2, in an embodiment of the present invention, which includes being set to reative cell Radio-frequency power supply 1 in (not shown) is electrically connected set on the sputtering target 2 of 1 output end of the radio-frequency power supply and with the radio-frequency power supply 1 The mass spectrograph 3, the radio-frequency power supply 1 include radio-frequency signal source 11, power amplifier module 12, reflectance factor detection module 13, impedance matching module 14 and processor 15, the radio-frequency signal source 11, the power amplifier module 12, the reflectance factor Detection module 13, the impedance matching module 14 and the mass spectrograph 3 are connect with 15 signal of the processor,
The radio-frequency power supply 1 is for bombarding the sputtering target 2;
The mass spectrograph 3 is for detecting the indoor plasma concentration of reaction;
The reflectance factor detection module 13 is for detecting the output impedance of the power amplifier module 12 and the power The input impedance of amplification module 12;
The processor 15 is used to control the output resistance that the impedance matching module 14 matches the power amplifier module 12 Anti- and the power amplifier module 12 input impedance, and for controlling the power amplifier module 12, so that the reaction The plasma concentration of room is identical as default plasma concentration.
Specifically, full of gases such as argon gas, nitrogen in the reative cell, radio-frequency power supply 1 generates lotus energy particle bombardment sputtering Target 2 so that the atom in sputtering target 2 or molecule effusion deposit to base material or form plated film on base material.The prior art proves, Different atmosphere, different 2 material of sputtering target, 1 frequency of radio-frequency power supply can all change plasma concentration, influence last deposition efficiency or Plate membrane efficiency.
In the present invention, indoor plasma concentration is reacted by using the detection of the mass spectrograph 3 so that radio-frequency power supply 1 The output power that the power amplifier module 12 can be adjusted according to plasma concentration, when the output work of the power amplifier module 12 When rate changes, the output impedance of radio-frequency power supply 1 is adjusted by impedance matching module 14 and input impedance is adapted, until plasma Concentration is identical as preset concentration, to improve deposition, plated film or the efficiency of etching.
Further, the impedance matching module 14 includes the output end for connecting the radio-frequency signal source 11 and the power The input adaptation 141 of the input terminal of amplification module 12, and the output that is connect with the output end of the power amplifier module 12 Adaptation 142, the input adaptation 141 are used to adjust the output impedance of the radio-frequency signal source 11 and the power amplification mould The input impedance of block 12 matches, the output matching device 142 be used to adjust the output impedance of the power amplifier module 12 with The input impedance of the sputtering target 2 matches.
Since radio-frequency signal source 11 itself all has certain impedance, if the output impedance and power of radio-frequency signal source 11 The input impedance of amplification module mismatches, and part energy can be launched, and may make radio-frequency signal source by inputting adaptation 141 The input resistant matching of 11 input impedance and power amplifier module 12.Correspondingly, power amplifier module 12 is also required to by defeated The matches impedances for going out adaptation 142 and sputtering target 2, to improve efficiency.Setting input adaptation 141 and output matching Device 142 can effectively reduce phase difference.
The power amplifier module 12 includes the driving source 121 that is connected and amplifying stage 122, the driving source 121 with it is outer Portion's power supply connection, the input terminal of the driving source 121 are connected with the input adaptation 141, the output of the amplifying stage 122 End is connected with the output matching device 142.Specifically, driving source 121 is AND gate circuit, when the radio-frequency signal source 11 is sent out Signal by AND gate circuit, generate be in logic 1 signal and external power supply be closed the signal that generation simultaneously is 1 in logic When, you can provide power supply supply for the amplifying stage 122.So that it is guaranteed that in available circuit, the interference that will not be generated by outside is believed Number influence, lead to 121 error starting of driving source.Preferably, it is additionally provided with radio-frequency choke between the driving source 121 and external power supply 123, to ensure that the electric current into driving source 121 is stablized.
In one embodiment, the amplifying stage 122 is switch power amplification module.The loss work(of switch power amplification module Rate is smaller.In this example, low-power radio frequency signal is amplified and is exported by 121 external variable DC power supply of driving source, and by changing Become external power supply, low-power radio frequency signal is amplified and is exported, and controllable amplification is realized by regulatable external power supply.
The input adaptation 141 includes being series between the radio-frequency signal source 11 and the power amplifier module 12 First parallel plate capacitor 1411, second parallel plate capacitor 1412 in parallel with the radio-frequency signal source 11 and input driver 1414, the input driver 1414 is for changing the pole plate relative area of first parallel plate capacitor 1411 and described second The pole plate relative area of parallel plate capacitor 1412.
The input adaptation 141 include be series at the radio-frequency signal source 11 and first parallel plate capacitor 1411 it Between the first inductance 1413.
The output matching device 142 includes and the concatenated third parallel plate capacitor of the output end of the power amplifier module 12 1421, fourth parallel plate capacitor 1422 in parallel with the output end of the power amplifier module 12 and output driver 1424, institute State pole plate relative area and fourth parallel-plate of the output driver 1424 for changing the third parallel plate capacitor 1421 The pole plate relative area of capacitance 1422.
The output matching device 142 includes being series at the output end of the power amplifier module 12 and the third parallel-plate The second inductance 1423 between capacitance 1421.
The input adaptation 141 is similar with the operation principle of the output matching device 142, be by processor 15 to The 1414 or described output driver 1424 of input driver sends signal so that the pole plate fortune in flat shape plate capacitance It is dynamic, to change relative area.
The reflectance factor detection module 13 is two dual directional couplers, and it is defeated to be respectively used to detection power amplifier module 12 Enter the incident voltage and reflected voltage of end and 12 output end of the power amplifier module.Specifically, the processor 15 receives work( The incident voltage and reflected voltage of 12 input terminal of rate amplification module and/or the incident voltage of 12 output end of the power amplifier module And reflected voltage, incident phase, reflected phase and reflectance factor are obtained with processing.
The reflectance factor detection module 13 further include the filter that is connect respectively with two dual directional couplers (not Diagram) and signal amplifier (not shown).Radio-frequency power supply 1 radio frequency of itself can be placed by the way that filter and signal amplifier is arranged Interference of the signal to dual directional coupler.
The foregoing is merely the preferred embodiment of the present invention, are not intended to limit the scope of the invention, every at this Under the design of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/it is used in it indirectly His relevant technical field is included in the scope of patent protection of the present invention.

Claims (10)

1. a kind of radio-frequency power supply detection device, which is characterized in that including being set to the indoor radio-frequency power supply of reaction, being set to the radio frequency The sputtering target of power output end and the mass spectrograph being electrically connected with the radio-frequency power supply, the radio-frequency power supply include radio-frequency signal source, Power amplifier module, reflectance factor detection module, impedance matching module and processor, the radio-frequency signal source, the power are put Big module, the reflectance factor detection module, the impedance matching module and the mass spectrograph connect with the processor signal It connects,
The radio-frequency power supply is for bombarding the sputtering target;
The mass spectrograph is for detecting the indoor plasma concentration of reaction;
The reflectance factor detection module is for detecting the output impedance of the power amplifier module and the power amplifier module Input impedance;
The processor matches the output impedance of the power amplifier module and the work(for controlling the impedance matching module The input impedance of rate amplification module, and the amplifying power for controlling the power amplifier module, so that the reative cell Plasma concentration is identical as default plasma concentration.
2. radio-frequency power supply detection device as described in claim 1, which is characterized in that the impedance matching module includes connection institute State the input adaptation of the output end of radio-frequency signal source and the input terminal of the power amplifier module, and with the power amplification The output matching device of the output end connection of module, the input adaptation be used to adjust the output impedance of the radio-frequency signal source with The input impedance of the power amplifier module matches, and the output matching device is used to adjust the output of the power amplifier module Impedance and the input impedance of the sputtering target match.
3. radio-frequency power supply detection device as claimed in claim 2, which is characterized in that the power amplifier module includes being connected Driving source and amplifying stage, the driving source connect with external power supply, the input terminal of the driving source and the input adaptation It is connected, the output end of the amplifying stage is connected with the output matching device.
4. radio-frequency power supply detection device as claimed in claim 3, which is characterized in that the amplifying stage is that switch power amplifies mould Block.
5. radio-frequency power supply detection device as claimed in claim 2, which is characterized in that the input adaptation includes being series at institute State the first parallel plate capacitor between radio-frequency signal source and the power amplifier module, in parallel with the radio-frequency signal source second Parallel plate capacitor and input driver, the driver that inputs is for changing the pole plate relative area of first parallel plate capacitor With the pole plate relative area of second parallel plate capacitor.
6. radio-frequency power supply detection device as claimed in claim 5, which is characterized in that the input adaptation includes being series at institute State the first inductance between radio-frequency signal source and first parallel plate capacitor.
7. radio-frequency power supply detection device as claimed in claim 2, which is characterized in that the output matching device includes and the work( The concatenated third parallel plate capacitor of output end of rate amplification module, Siping City in parallel with the output end of the power amplifier module Andante capacitance and output driver, the output driver for changing the third parallel plate capacitor pole plate relative area and The pole plate relative area of 4th parallel plate capacitor.
8. radio-frequency power supply detection device as claimed in claim 7, which is characterized in that the output matching device includes being series at institute State the second inductance between the output end of power amplifier module and the third parallel plate capacitor.
9. radio-frequency power supply detection device as described in claim 1, which is characterized in that the reflectance factor detection module is two Dual directional coupler is respectively used to the incident voltage of detection power amplifier module input terminal and the power amplifier module output end And reflected voltage.
10. radio-frequency power supply detection device as claimed in claim 9, which is characterized in that the radio-frequency power supply further include respectively with The filter and signal amplifier of two dual directional coupler connections.
CN201810258333.2A 2018-03-27 2018-03-27 Radio-frequency power supply detection device Pending CN108519559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810258333.2A CN108519559A (en) 2018-03-27 2018-03-27 Radio-frequency power supply detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810258333.2A CN108519559A (en) 2018-03-27 2018-03-27 Radio-frequency power supply detection device

Publications (1)

Publication Number Publication Date
CN108519559A true CN108519559A (en) 2018-09-11

Family

ID=63434308

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810258333.2A Pending CN108519559A (en) 2018-03-27 2018-03-27 Radio-frequency power supply detection device

Country Status (1)

Country Link
CN (1) CN108519559A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109975722A (en) * 2019-03-17 2019-07-05 江苏神州半导体科技有限公司 A kind of detection method of radio-frequency power supply
CN110419562A (en) * 2019-09-02 2019-11-08 四川长虹电器股份有限公司 The changeable radio frequency thawing apparatus for accessing parallel plate suqare

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587226A (en) * 1993-01-28 1996-12-24 Regents, University Of California Porcelain-coated antenna for radio-frequency driven plasma source
CN1619011A (en) * 2003-11-17 2005-05-25 三星电子株式会社 Ionized physical vapor deposition apparatus using helical self-resonant coil
CN101958232A (en) * 2010-05-28 2011-01-26 重庆邮电大学 FTIR spectrum monitoring based internal state maintenance method of plasma etcher
CN103780241A (en) * 2012-10-23 2014-05-07 朗姆研究公司 TCCT match circuit for plasma etch chambers
CN104183514A (en) * 2013-05-22 2014-12-03 中微半导体设备(上海)有限公司 System for improving TSV etching process and etching endpoint monitoring method
CN104349567A (en) * 2013-07-29 2015-02-11 北京北方微电子基地设备工艺研究中心有限责任公司 Radio frequency power supply system and a method for performing impedance matching by utilizing radio frequency power supply system
CN106048531A (en) * 2016-07-28 2016-10-26 苏州大学 ICP reinforced multi-target magnetron sputtering device and method for preparing TiO2 film by using device
CN107275178A (en) * 2016-04-06 2017-10-20 北京北方华创微电子装备有限公司 A kind of semiconductor processing device
CN107316794A (en) * 2016-04-26 2017-11-03 北京北方华创微电子装备有限公司 A kind of semiconductor processing device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587226A (en) * 1993-01-28 1996-12-24 Regents, University Of California Porcelain-coated antenna for radio-frequency driven plasma source
CN1619011A (en) * 2003-11-17 2005-05-25 三星电子株式会社 Ionized physical vapor deposition apparatus using helical self-resonant coil
CN101958232A (en) * 2010-05-28 2011-01-26 重庆邮电大学 FTIR spectrum monitoring based internal state maintenance method of plasma etcher
CN103780241A (en) * 2012-10-23 2014-05-07 朗姆研究公司 TCCT match circuit for plasma etch chambers
CN104183514A (en) * 2013-05-22 2014-12-03 中微半导体设备(上海)有限公司 System for improving TSV etching process and etching endpoint monitoring method
CN104349567A (en) * 2013-07-29 2015-02-11 北京北方微电子基地设备工艺研究中心有限责任公司 Radio frequency power supply system and a method for performing impedance matching by utilizing radio frequency power supply system
CN107275178A (en) * 2016-04-06 2017-10-20 北京北方华创微电子装备有限公司 A kind of semiconductor processing device
CN107316794A (en) * 2016-04-26 2017-11-03 北京北方华创微电子装备有限公司 A kind of semiconductor processing device
CN106048531A (en) * 2016-07-28 2016-10-26 苏州大学 ICP reinforced multi-target magnetron sputtering device and method for preparing TiO2 film by using device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
孙小桃: "真空溅射系统射频电源功率放大器和阻抗匹配关键技术的研究", 《中国优秀硕士学位论文全文数据库信息科技辑》 *
王亮: "射频电源与阻抗自动匹配技术研究", 《万方数据库》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109975722A (en) * 2019-03-17 2019-07-05 江苏神州半导体科技有限公司 A kind of detection method of radio-frequency power supply
CN109975722B (en) * 2019-03-17 2021-09-14 江苏神州半导体科技有限公司 Detection method of radio frequency power supply
CN110419562A (en) * 2019-09-02 2019-11-08 四川长虹电器股份有限公司 The changeable radio frequency thawing apparatus for accessing parallel plate suqare
CN110419562B (en) * 2019-09-02 2022-08-16 四川长虹电器股份有限公司 Radio frequency unfreezing device capable of changing area of access parallel plate

Similar Documents

Publication Publication Date Title
JP6162016B2 (en) Plasma processing equipment
CN108519559A (en) Radio-frequency power supply detection device
JP2008544480A5 (en)
CN103476196B (en) Plasma processing apparatus and method of plasma processing
KR102033180B1 (en) Plasma processing apparatus
TW201621974A (en) Plasma processing device
JP2001316817A (en) Method for crystallization of lithium transition metal oxide thin film by plasma treatment
TW201533797A (en) Plasma processing device
CN104030234A (en) MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor
US20060124244A1 (en) Plasma processor and plasma processing method
US20040261717A1 (en) Matching device and plasma processing apparatus
CN109982500A (en) Microwave plasma processing apparatus
KR20130080000A (en) Thin-film formation method and thin-film formation device
TWI825427B (en) Plasma etching system and faraday shield device thereof applicable to heating
CN107454731B (en) Radio frequency automatic impedance matcher and semiconductor equipment
CN201766766U (en) Device for generating plasmas uniformly in large area
CN110379699A (en) Plasma processing apparatus
Janković et al. Balanced bandpass filter based on square patch resonators
CN103474328A (en) Plasma treatment method
CN102605334B (en) Preparation method for Ge-Sb-Se amorphous film of all-optical device
CN102830745B (en) Closed-loop control circuit of radio-frequency power supply
Bernaudin et al. Power couplers for Spiral 2
TWI668720B (en) Variable capacitance, impedance matching device and semiconductor processing device
Pizarro et al. Experimental study of RF/microplasma interaction using an inverted microstrip line
CN108666197A (en) A kind of pulse power supply and semiconductor equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
CB03 Change of inventor or designer information

Inventor after: Li Yansen

Inventor before: Li Yansen

CB03 Change of inventor or designer information
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180911

WD01 Invention patent application deemed withdrawn after publication