CN108666197A - A kind of pulse power supply and semiconductor equipment - Google Patents
A kind of pulse power supply and semiconductor equipment Download PDFInfo
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- CN108666197A CN108666197A CN201710208662.1A CN201710208662A CN108666197A CN 108666197 A CN108666197 A CN 108666197A CN 201710208662 A CN201710208662 A CN 201710208662A CN 108666197 A CN108666197 A CN 108666197A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Abstract
A kind of pulse power supply of present invention offer and semiconductor equipment,Existing radio-frequency pulse power supply is replaced using continuous wave power source,And its continuous wave power signal exported is enabled to first pass through adaptation,The impedance detection device in adaptation is enable to detect continuous voltage and current signal,To avoid the problem that impedance mismatching,Later,It by the continuous wave power signal decomposition after matching is at least two paths of signals to recycle power divider,All the way signal via after phase shifter phase shift again with remaining Signal averaging,Obtain RF pulse signal,In this way,RF pulse signal can either be generated,Carrying out technique using pulsed radio-frequency power reduces plasma body induction damage,It can ensure impedance matching again,Improve the stability of adaptation,To further increase the impedance stability of reaction chamber,Especially in the case of low duty ratio and high pulse frequencies,The effect for improving the stability of adaptation becomes apparent from.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology fields, and in particular to a kind of pulse power supply and semiconductor equipment.
Background technology
In semiconductor coated film and etching apparatus, usually the RF energy that radio-frequency power supply provides is transferred in chamber, electricity
From the gas (such as argon gas, helium, nitrogen, hydrogen) under high vacuum state, to generate containing a large amount of electronics, ion, excitation
The atom of state, the plasma of molecule and free radical isoreactivity particle, these active particles and are placed in cavity and expose to the open air and waiting
Complicated interaction occurs between wafer under gas ions environment, keeps the various physics of wafer material surface generation and chemistry anti-
It answers, to make material surface performance change, completes plated film, the etching technics of wafer.
Since pulse plasma body technique can reduce the plasma body induction damage that continuous wave RF energy is brought
(Plasma induced damage, PID) improves the load effect in technical process, improves filling perforation, etching selection ratio, and
Process adjustments means and window are increased, therefore is then very crucial for the design of pulse power supply.
As shown in Figure 1a, existing a kind of impulse type Pvd equipment in coating process, including：Reaction
Chamber 5, target 4, magnetron 7, DC power supply 6, pedestal 3, adaptation 8 and radio-frequency pulse power supply 9.Wherein, DC power supply 6, target
Material 4 and magnetron 7 form top electrode, and dc power is applied on target 4 by DC power supply 6, generate plasma, and attract from
Son bombardment target 4, is deposited on after so that the material of target 4 is sputtered on the wafer (not being painted in figure) being carried on pedestal 3.
Radio-frequency pulse power supply 9, adaptation 8 and pedestal 3 form lower electrode, generate RF energy using pulse technique and are fed into reaction chamber
Room 5, specifically, radio-frequency pulse power supply 9 generates RF pulse signal, via the load of adaptation 8 on pedestal 3, radio-frequency power production
Raw radio frequency automatic bias attracts ion to realize the filling of wafer hole.By adjusting pulse frequency and duty ratio, electronics can be adjusted
Temperature, to reduce the particle energy of bombardment wafer, to meet the needs of 20nm and following technique are to low damage.Radio-frequency pulse
The waveform of signal is as shown in Figure 1 b, and the pulse opening time for loading signal is t1, when pulse-off a length of t2, pulse frequency f
=1/ (t1+t2), pulse duty factor D=t1/ (t1+t2).
What it is due to the generation of radio-frequency pulse power supply 9 is discrete pulse signal, and the impedance detection device in adaptation 8 passes through
Collection voltages current signal determines impedance, and voltage and current signal is continuous signal, so anti-detection devices can be caused to detect
Impedance can not keep up with the variation of pulse signal, so as to cause 8 mismatch of adaptation, and then entire technique is made to stop, especially being existed
In the case of low duty ratio and high pulse frequencies, the case where 8 mismatch of adaptation, can be more obvious.
Invention content
The present invention aiming at the above shortcomings existing in the prior art, provides a kind of pulse power supply and semiconductor equipment, uses
The problem of with part resolved impedance spectroscopy mismatch.
The present invention is in order to solve the above technical problems, adopt the following technical scheme that：
The present invention provides a kind of pulse power supply, including adaptation, further includes continuous wave power source, power divider, the
One phase shifter and the first power combiner, the power divider have at least two output ends, first power combiner
With at least two input terminals；
The input terminal and output end of the adaptation divide with the output end in the continuous wave power source and the power respectively
The input terminal of orchestration is connected, the first input end phase of the first output end of the power divider and first power combiner
Even, second input terminal of the second output terminal through first phase shifter Yu first power combiner of the power divider
It is connected；
The continuous wave power signal of the continuous wave power source output, after the adaptation, by the power distribution
Device is assigned as at least two-way power signal, and wherein at least all the way power signal after first phase shifter changes phase, then
With remaining power signal pulsed power signal output is synthesized through first power combiner.
Preferably, the frequency in the continuous wave power source and the adaptation, the power divider, first phase shift
Device, the frequency of first power combiner are equal；
And the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz or 100MHz.
Preferably, first phase shifter is electronically controlled phase shifter or Mechanical course phase shifter.
Preferably, the phase shift number of degrees of first phase shifter are 180 degree, and phase shifted time is identical.
Preferably, the power signal ratio of multiple output ends output of the power divider is equal and immobilizes.
The present invention also provides a kind of pulse power supply, including adaptation, further include continuous wave power source, power divider,
Second phase shifter, the second power combiner, third phase shifter and third power combiner；The power divider has at least four
A output end, described second and third power combiner have at least two input terminals；
The input terminal and output end of the adaptation divide with the output end in the continuous wave power source and the power respectively
The input terminal of orchestration is connected, the first input end phase of the first output end of the power divider and second power combiner
Even, second input terminal of the second output terminal through second phase shifter Yu second power combiner of the power divider
It is connected；
The third output end of the power divider is connected with the first input end of the third power combiner, the work(
4th output end of rate distributor is connected through the third phase shifter with the second input terminal of the third power combiner；
The continuous wave power signal of the continuous wave power source output, after the adaptation, by the power distribution
Device is assigned as two groups of power signals, and every group of power signal includes at least two-way power signal, and in wherein first group of power signal
Power signal all the way through second phase shifter change phase after, then in first group of power signal remaining power signal pass through
Second power combiner synthesizes pulsed power signal output；Described in the warp of power signal all the way in second group of power signal
After third phase shifter changes phase, then synthesized through the third power combiner with remaining power signal in second group of power signal
It is exported for pulsed power signal.
Preferably, the frequency in the continuous wave power source and the adaptation, the power divider, second phase shift
Device, second power combiner, the third phase shifter, the frequency of the third power combiner are equal；
And the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz or 100MHz.
Preferably, second phase shifter and the third phase shifter are electronically controlled phase shifter or Mechanical course phase shifter.
Preferably, the phase shift number of degrees of second phase shifter are 180 degree, and phase shifted time is identical；The third phase shifter
The phase shift number of degrees be 180 degree, and phase shifted time is identical.
Preferably, the power signal ratio of multiple output ends output of the power divider is equal and immobilizes.
The present invention also provides a kind of semiconductor equipments, including foregoing pulse power supply.
Preferably, the semiconductor equipment is Pvd equipment；
The pulse power supply is one, the base of the output end of the pulse power supply and the Pvd equipment
Seat or target are connected；Alternatively,
The pulse power supply is two, the output end of one of pulse power supply and the Pvd equipment
Pedestal be connected, the output end of another pulse power supply is connected with the target of the Pvd equipment.
Preferably, the semiconductor equipment is plasma etch apparatus；
The pulse power supply is one, the pedestal of the output end of the pulse power supply and the etching apparatus or described
The plasma producing apparatus of plasma etch apparatus is connected；Alternatively,
The pulse power supply is two, the output end of one of pulse power supply and the plasma etch apparatus
Pedestal be connected, the plasma producing apparatus phase of the output end of another pulse power supply and the plasma etch apparatus
Even.
The present invention also provides a kind of semiconductor equipments, including foregoing pulse power supply.
Preferably, the semiconductor equipment is Pvd equipment；
One output end of the pulse power supply is connected with the pedestal of the Pvd equipment；The pulse work(
Another output end in rate source is connected with the target of the Pvd equipment.
Preferably, the semiconductor equipment is plasma etch apparatus；
One output end of the pulse power supply is connected with the pedestal of the plasma etch apparatus；The pulse work(
Another output end in rate source is connected with the plasma producing apparatus of the plasma etch apparatus.
The present invention can realize following advantageous effect：
The present invention replaces existing radio-frequency pulse power supply using continuous wave power source, and the continuous wave power letter for enabling it export
Number first pass through adaptation so that the impedance detection device in adaptation can detect continuous voltage and current signal, to avoid
Continuous wave power signal decomposition after matching is that at least two-way is believed by the problem of impedance mismatching, and then utilization power divider
Number, signal after phase shifter phase shift via, again with remaining Signal averaging, obtaining RF pulse signal, in this way, can either produce all the way
Raw RF pulse signal, carrying out technique using pulsed radio-frequency power reduces plasma body induction damage, and can ensure impedance
Match, improve the stability of adaptation, to further increase the impedance stability of reaction chamber, especially in low duty ratio and height
In the case of pulse frequency, the effect for improving the stability of adaptation becomes apparent from.
Description of the drawings
Fig. 1 a are the structural schematic diagram of existing semiconductor equipment；
Fig. 1 b are the pulse sequence figure of existing radio-frequency pulse power supply；
Fig. 2 a are the structural schematic diagram for the pulse power supply that the embodiment of the present invention 1 provides；
Fig. 2 b are the structural schematic diagram for the pulse power supply that the embodiment of the present invention 2 provides；
Fig. 2 c are the sequence diagram of the sinusoidal impulse signal for the pulse power supply output that the embodiment of the present invention 1 and 2 provides；
Fig. 3 is the structural schematic diagram for the semiconductor equipment (PVD equipment) that the embodiment of the present invention 3 provides；
Fig. 4 is the structural schematic diagram for the semiconductor equipment (PVD equipment) that the embodiment of the present invention 4 provides；
Fig. 5 a are the structural schematic diagram for the semiconductor equipment (PVD equipment) that the embodiment of the present invention 5 provides；
Fig. 5 b are the structural schematic diagram for the semiconductor equipment (PVD equipment) that the embodiment of the present invention 6 provides.
Marginal data：
1, pulse power supply 11, adaptation 12, continuous wave power source
13, power divider 14, the first phase shifter 15, the first power combiner
2, pulse power supply 21, adaptation 22, continuous wave power source
23, power divider 24, the first phase shifter 25, the first power combiner
26, the second phase shifter 27, the second power combiner 3, pedestal
4, target 5, reaction chamber 6, DC power supply
7, magnetron 8, adaptation 9, radio-frequency pulse power supply
Specific implementation mode
Below in conjunction with the attached drawing in the present invention, clear, complete description is carried out to the technical solution in the present invention, is shown
So, described embodiment is a part of the embodiment of the present invention, instead of all the embodiments.Based on the implementation in the present invention
Example, the every other embodiment that those of ordinary skill in the art are obtained without making creative work all belong to
In the scope of protection of the invention.
The embodiment of the present invention generates continuous radiofrequency signal using continuous wave power source, enables the continuous wave power signal first
By adaptation, impedance matching is realized, recycle power divider, phase shifter and power combiner by the continuous radiofrequency signal
Pulsed RF signals are converted into, then pulsed RF signals are accessed into semiconductor equipment.
Below in conjunction with Fig. 2 a to Fig. 5 b, the technical solution that the present invention will be described in detail.
Embodiment 1
As shown in Figure 2 a, the embodiment of the present invention 1 provides a kind of pulse power supply 1, including adaptation 11, further includes continuous wave
Power source 12, power divider 13, the first phase shifter 14 and the first power combiner 15.Power divider 13 has at least two
Output end, the first power combiner 15 have at least two input terminals.
The input terminal and output end of adaptation 11 respectively with the output end in continuous wave power source 12 and power divider 13
Input terminal is connected, and the first output end of power divider 13 is connected with the first input end of the first power combiner 15, power point
The second output terminal of orchestration 13 is connected through the first phase shifter 14 with the second input terminal of the first power combiner 15.
The continuous wave power signal that continuous wave power source 12 exports is distributed after adaptation 11 by power divider 13
Be at least two-way power signal, and wherein at least all the way power signal after the first phase shifter 14 changes phase, then with its complementary work
Rate signal synthesizes pulsed power signal output through the first power combiner 15.
Adaptation 11 can be digital adaptation, or simulation adaptation.The adaptation network type of adaptation 11
Can be L-type, inverted L shape, π types or T-type.
The present invention replaces existing radio-frequency pulse power supply using continuous wave power source 12, and the continuous wave power for enabling it export
Signal first passes through adaptation 11 so that and the impedance detection device in adaptation 11 can detect continuous voltage and current signal, from
And avoid the problem that impedance mismatching, and then the continuous waveform that is sent out continuous wave power source 12 using power divider 13
Signal decomposition is at least two paths of signals, and signal after 14 phase shift of phase shifter via, again with remaining Signal averaging, obtaining radio frequency all the way
Pulse signal, in this way, RF pulse signal can either be generated, it is plasma-induced to carry out technique reduction using pulsed radio-frequency power
Damage, and can ensure impedance matching, the stability of adaptation is improved, to further increase the impedance stabilization of reaction chamber
Property.
Specifically, the frequency of the rf frequency in continuous wave power source 12, the frequency of adaptation 11, power divider 13,
The frequency of one phase shifter 14 and the frequency of the first power combiner 15 are equal, to ensure that pulse power supply 1 can work normally.
The rf frequency in continuous wave power source 12, the frequency of adaptation 11, the frequency of power divider 13, the first phase shifter
14 frequency and the frequency of the first power combiner 15 can be 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz
Or 100MHz, corresponding frequency can be selected according to the difference and actual needs of application scenarios.
Preferably, the first phase shifter 14 can be electronically controlled phase shifter or Mechanical course phase shifter.
In embodiments of the present invention, it is illustrated so that pulse power supply 1 generates sinusoidal radio frequency pulse signal as an example.
In conjunction with shown in Fig. 2 a and Fig. 2 c, continuous wave power source 12 generates sine wave, and power divider 13 is dual output power
Distributor includes two output ends (i.e. the first output end and second output terminal), can be by continuous sinusoidal radio frequency signal point
For two-way, signal enters the first power combiner 15, another way signal via the first phase shifter 14 by first input end all the way
It is directly entered the first power combiner 15 by the second input terminal.
Sinusoidal radio frequency pulse signal in order to obtain, the phase shift number of degrees of the first phase shifter 14 are 180 degree, and phase shifted time phase
Together.The power signal ratio of multiple output ends output of power divider 13 is equal and immobilizes.
Specifically, can 0 ° be set as phase shift angle of first phase shifter 14 in pulse opening time t1, in pulse
The phase shift angle closed in duration t2 is set as 180 °, and, pulse opening time and pulse closing duration are set as equal
(i.e. t1=t2), and, the power ratio of the first output end of power divider 13 and second output terminal is set as 1:1.In this way,
The continuous wave that adaptation 11 exports is divided into two-way by power divider 13, all the way directly to the first power combiner 15, one
Road gives the first power combiner 15, the first power combiner 15 to fold two-way power after 14 phase shift of the first phase shifter
Add, generate and export sinusoidal radio frequency pulse signal, the waveform of the sinusoidal radio frequency pulse signal is as shown in Figure 2 c.
The pulse opening time of the sinusoidal radio frequency pulse signal is t1, when pulse-off a length of t2, pulse frequency f=
1/ (t1+t2), pulse duty factor D=t1/ (t1+t2).Comparison diagram 2c and Fig. 1 b can be seen that the sinusoidal radio frequency pulse letter of Fig. 2 c
Number waveform it is identical as the waveform of sinusoidal radio frequency pulse signal of Fig. 1 b, that is to say, that pulse power supply 1 of the invention exported
Sinusoidal impulse signal is identical as the sinusoidal impulse signal that existing pulse power supply exports, and utilizes the pulse power supply 1 of the present invention
RF pulse signal can be generated, technique is carried out using the pulsed radio-frequency power of the RF pulse signal, plasma can be reduced
Body induced damage.
It should be noted that the pulse signal that pulse power supply 1 generates is not limited to sinusoidal waveform, can also be Pulse of Arbitrary
Waveform, for example, square-wave pulse signal or triangular pulse signal.Specifically, the phase shift of the first phase shifter 14 of change can be passed through
The power ratio of the number of degrees and power divider 13 changes impulse waveform.
The power ratio of the phase shift number of degrees and power divider 13 of the first phase shifter 14 can be adjusted according to actual needs, to
The waveform for adjusting the pulse signal that pulse power supply 1 exports, obtains radio-frequency pulse modulated signal, realizes the transformation of multiple waveforms,
Expand process window, reduces process costs.
The specific implementation side of the waveform and frequency of RF pulse signal is adjusted according to the phase shift number of degrees, power ratio, phase shifted time
Formula belongs to the prior art, and details are not described herein.
Embodiment 2
The embodiment of the present invention 2 provides a kind of pulse power supply, and difference lies in increase one group to embodiment 2 with embodiment 1
Phase shifter and power combiner, to increase by one group of RF pulse signal output.
As shown in Figure 2 b, embodiment 2 provides a kind of pulse power supply 2, including adaptation 21, continuous wave power source 22, work(
Rate distributor 23, the second phase shifter 24, the second power combiner 25, third phase shifter 26 and third power combiner 27.Power
There are distributor 23 at least four output ends, the second power combiner 25 and third power combiner 27 to have at least two inputs
End.
The input terminal and output end of adaptation 21 respectively with the output end in continuous wave power source 22 and power divider 23
Input terminal is connected, and the first output end of power divider 23 is connected with the first input end of the second power combiner 25, power point
The second output terminal of orchestration 23 is connected through the second phase shifter 24 with the second input terminal of the second power combiner 25.Power divider
23 third output end is connected with the first input end of the third power combiner 27, the 4th output end of power divider 23
It is connected with the second input terminal of third power combiner 27 through third phase shifter 26.
The continuous wave power signal that continuous wave power source 22 exports is distributed after adaptation 21 by power divider 23
For two groups of power signals, every group of power signal includes at least two-way power signal, and in wherein first group of power signal all the way
Power signal is after the second phase shifter 24 changes phase, then with remaining power signal in first group of power signal through the second power
Synthesizer 25 synthesizes pulsed power signal output；Power signal all the way in second group of power signal changes through third phase shifter 26
After changeable phases, then with remaining power signal in second group of power signal pulsed power signal is synthesized through third power combiner 27
Output.In the present embodiment, continuous wave power source 22 generates sine wave, and power divider 23 is four output power distributors, packet
Four output ends (i.e. the first output end, second output terminal, third output end and the 4th output end) are included, it can be by continuous sine
Radiofrequency signal is divided into four tunnels, and four road signals in pairs, are divided into two groups.From first group of signal that power divider 23 exports
Signal enters the second power combiner 25 via the second phase shifter 24 all the way, and the another way signal in first group of signal is directly entered
Second power combiner 25；From power divider 23 export second group of signal in signal all the way via third phase shifter 26 into
Enter third power combiner 27, the another way signal in second group of signal is directly entered third power combiner 27.
Specifically, the frequency of the rf frequency in continuous wave power source 22, the frequency of adaptation 21, power divider 23,
The frequency of one phase shifter 24, the frequency of the second phase shifter 26, the frequency of the first power combiner 25 and the second power combiner 27
Frequency it is equal, to ensure that pulse power supply 2 can work normally.Second group of sinusoidal radio frequency pulse signal in order to obtain, second
The phase shift number of degrees of phase shifter 24 are 180 degree, and phase shifted time is identical, and the phase shift number of degrees of third phase shifter 26 are 180 degree, and phase shift
Time is identical.The power signal ratio of multiple output ends output of power divider 13 is equal and immobilizes.
Specifically, can 0 ° be set as phase shift angle of second phase shifter 24 in pulse opening time t1, in pulse
The phase shift angle closed in duration t2 is set as 180 °, and by pulse opening time and pulse closing duration be set as it is equal (i.e.
T1=t2).And phase shift angle of the third phase shifter 26 in pulse opening time t1 is set as 0 °, when pulse is closed
Phase shift angle in long t2 is set as 180 °, and pulse opening time is closed duration with pulse and is set as equal (i.e. t1=
T2), and, by the first output end of power divider 23, the power ratio of second output terminal, third output end and the 4th output end
It is set as 1:1:1:1.
Preferably, the second phase shifter 24 and/or third phase shifter 26 can be electronically controlled phase shifter or Mechanical course phase shifter.
The pulse power supply output of embodiment 1 is a RF pulse signal, which can load
(i.e. pulse power supply 1 is applied individually to any the top electrode of semiconductor equipment or lower electricity for the top electrode of semiconductor equipment or lower electrode
Pole), alternatively, by the way that two pulse power supplies 1 described in embodiment 1, the radio-frequency pulse letter that two pulse power supplies 1 export is arranged
Top electrode and the lower electrode in semiconductor equipment number are loaded respectively.And the pulse power supply 2 of embodiment 2 can export two simultaneously
RF pulse signal, a RF pulse signal load is in the top electrode of semiconductor equipment, the load of another RF pulse signal
In the lower electrode of semiconductor equipment (i.e. pulse power supply 2 is simultaneously applied to the top electrode of semiconductor equipment and lower electrode).
The present invention also provides a kind of semiconductor equipment, the semiconductor equipment includes foregoing pulse power supply.With
Lower combination Fig. 3, Fig. 4, Fig. 5 a, Fig. 5 b and embodiment 3-5, are described in detail the structure of semiconductor equipment.
Embodiment 3
As shown in figure 3, embodiment 3 provides a kind of semiconductor equipment, the semiconductor equipment is Pvd equipment,
Including pulse power supply 1, reaction chamber 5, pedestal 3 and target 4, target 4 and the side wall of reaction chamber 5 are tightly connected, and pedestal 3 holds
It is placed in reaction chamber 5.Pulse power supply 1 is the pulse power supply that embodiment 1 provides, wherein pulse power supply 1 is one,
The pedestal 3 of output end (i.e. the output end of the first power combiner 15) and the Pvd equipment of pulse power supply 1
It is connected.
The semiconductor equipment further includes DC power supply 6 and magnetron 7, on DC power supply 6, target 4 and magnetron 7 are formed
Dc power is applied on target 4 by electrode, DC power supply 6, generates plasma.
In embodiment 3, the pulse power supply 1 in embodiment 1 is applied individually to any to the lower electrode of semiconductor equipment, and partly
The top electrode of conductor device still loads DC power supply, and existing radio-frequency pulse power supply is replaced using continuous wave power source 12, and
Its continuous wave power signal exported is enabled to first pass through adaptation 11 so that the impedance detection device in adaptation 11 can the company of detecting
Continuous voltage and current signal to avoid the problem that impedance mismatching, and then utilizes power divider 13 by continuous wave power source
The 12 continuous waveform signals sent out are decomposed at least two paths of signals, all the way signal via after 14 phase shift of the first phase shifter again with its
Remaining Signal averaging, obtains RF pulse signal, in this way, RF pulse signal can either be generated, using pulsed radio-frequency power into
Row technique reduces plasma body induction damage, and can ensure impedance matching, improves the stability of adaptation 11, to further
The impedance stability for improving reaction chamber improves adaptation 11 especially in the case of low duty ratio and high pulse frequencies
The effect of stability becomes apparent from.
It should be noted that the semiconductor equipment may be plasma etch apparatus, and in this case, pulse
The output end of power source 1 is connected with the pedestal of the etching apparatus.
Embodiment 4
As shown in figure 4, embodiment 4 provides a kind of semiconductor equipment, the semiconductor equipment is Pvd equipment,
Difference lies in be applied individually to any powering on for semiconductor equipment to embodiment 4 by the pulse power supply 1 in embodiment 1 with embodiment 3
Pole.
As shown in figure 4, the semiconductor equipment includes：Pulse power supply 1, reaction chamber 5, pedestal 3, target 4 and magnetic control
Pipe 7, target 4 and the side wall of reaction chamber 5 are tightly connected, and pedestal 3 is placed in reaction chamber 5.Pulse power supply 1 is embodiment
1 pulse power supply provided, wherein pulse power supply 1 is one, output end (i.e. the first power combiner of pulse power supply 1
15 output end) it is connected with the target 4 of the Pvd equipment.
The semiconductor equipment further includes radio-frequency pulse power supply 9 and adaptation 8, adaptation 8 respectively with radio-frequency pulse power supply 9
It is connected with pedestal 3, pedestal 3, adaptation 8 and radio-frequency pulse power supply 9 form the lower electrode of the semiconductor equipment.
It should be noted that the semiconductor equipment may be plasma etch apparatus, and in this case, pulse
The output end of power source 1 is connected with the pedestal of the etching apparatus.
Embodiment 5
As shown in Figure 5 a, embodiment 5 provides a kind of semiconductor equipment, and the semiconductor equipment sets for physical vapour deposition (PVD)
Standby, difference lies in the pulse power supply 1 in the semiconductor equipment that embodiment 3 provides is one to embodiment 5 with embodiment 3 and 4
It is a, it is only applied to the lower electrode of semiconductor equipment, the pulse power supply 1 in the semiconductor equipment that embodiment 4 provides is one, only
Applied to the top electrode of semiconductor equipment, and the pulse power supply 1 in the semiconductor equipment that embodiment 5 provides is two, respectively
Top electrode applied to semiconductor equipment and lower electrode.
As shown in Figure 5 a, the semiconductor equipment includes：Pulse power supply 1, reaction chamber 5, pedestal 3 and target 4, target
4 are tightly connected with the side wall of reaction chamber 5, and pedestal 3 is placed in reaction chamber 5.The pulse power supply 1 is that embodiment 1 carries
The pulse power supply of confession, and pulse power supply 1 is two.Output end (i.e. the first power combing of one of pulse power supply 1
The output end of device 15) it is connected with pedestal 3, output end (the i.e. output of the first power combiner 15 of another pulse power supply 1
End) it is connected with the Pvd equipment target 4.
It should be noted that the semiconductor equipment may be plasma etch apparatus, in this case, wherein
The output end of one pulse power supply is connected with the pedestal of plasma etch apparatus, the output end of another pulse power supply with
The plasma producing apparatus of the plasma etch apparatus is connected.The plasma producing apparatus is usually coil.
Embodiment 6
As shown in Figure 5 b, embodiment 6 provides a kind of semiconductor equipment, and the semiconductor equipment sets for physical vapour deposition (PVD)
Standby, difference lies in the semiconductor equipment of embodiment 6 uses the pulse power supply of one embodiment 2 to embodiment 6 with embodiment 5
2, and the semiconductor equipment of embodiment 5 uses the pulse power supply 1 of two embodiments 1.
As shown in Figure 5 b, the semiconductor equipment includes：Pulse power supply 2, reaction chamber 5, pedestal 3 and target 4, target
4 are tightly connected with the side wall of reaction chamber 5, and pedestal 3 is placed in reaction chamber 5.Pulse power supply 2 is what embodiment 2 provided
Pulse power supply a, wherein output end (i.e. the output end of the second power combiner 25) for pulse power supply 2 and the physics
The pedestal 3 of vapor deposition apparatus is connected；Another output end (i.e. the output end of third power combiner 27) of pulse power supply 2
It is connected with the target 4 of the Pvd equipment.
It should be noted that the semiconductor equipment may be plasma etch apparatus, and in this case, pulse
One output end of power source is connected with the pedestal of the plasma etch apparatus, another output end of pulse power supply with
The plasma producing apparatus of the plasma etch apparatus is connected.The plasma producing apparatus is usually coil.
It should be noted that the semiconductor equipment of the present invention is not limited to above-mentioned physical vapour deposition (PVD) or plasma etching is set
It is standby, or chemical vapor deposition (CVD) equipment etc..
The pulse power supply and semiconductor equipment of the present invention can generate the radio-frequency pulse of random waveform, duty ratio and frequency
The RF pulse signal is loaded onto the upper and lower electrode of semiconductor equipment to realize pulsation process, due in adaptation by signal
What impedance detection device detected is continuous wave signal, therefore accurate impedance detection may be implemented, and then controls adaptation
It realizes impedance matching, ensures the normal of entire technique, stablize and carry out.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (16)
1. a kind of pulse power supply, including adaptation, which is characterized in that further include continuous wave power source, power divider, first
Phase shifter and the first power combiner, the power divider have at least two output ends, the first power combing utensil
There are at least two input terminals；
The input terminal and output end of the adaptation respectively with the output end in the continuous wave power source and the power divider
Input terminal be connected, the first output end of the power divider is connected with the first input end of first power combiner,
Second input terminal phase of the second output terminal of the power divider through first phase shifter with first power combiner
Even；
The continuous wave power signal of the continuous wave power source output, after the adaptation, by the power divider point
With being at least two-way power signal, and wherein at least all the way power signal after first phase shifter changes phase, then with its
Remaining power signal synthesizes pulsed power signal output through first power combiner.
2. pulse power supply as described in claim 1, which is characterized in that the frequency in the continuous wave power source and the matching
Device, the power divider, first phase shifter, the frequency of first power combiner are equal；
And the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz or 100MHz.
3. pulse power supply as described in claim 1, which is characterized in that first phase shifter is electronically controlled phase shifter or machinery
Control phase shifter.
4. pulse power supply as described in claim 1, which is characterized in that the phase shift number of degrees of first phase shifter are 180 degree,
And phase shifted time is identical.
5. pulse power supply as described in claim 1, which is characterized in that multiple output ends output of the power divider
Power signal ratio is equal and immobilizes.
6. a kind of pulse power supply, including adaptation, which is characterized in that further include continuous wave power source, power divider, second
Phase shifter, the second power combiner, third phase shifter and third power combiner；The power divider is defeated at least four
Outlet, described second and third power combiner have at least two input terminals；
The input terminal and output end of the adaptation respectively with the output end in the continuous wave power source and the power divider
Input terminal be connected, the first output end of the power divider is connected with the first input end of second power combiner,
Second input terminal phase of the second output terminal of the power divider through second phase shifter with second power combiner
Even；
The third output end of the power divider is connected with the first input end of the third power combiner, the power point
4th output end of orchestration is connected through the third phase shifter with the second input terminal of the third power combiner；
The continuous wave power signal of the continuous wave power source output, after the adaptation, by the power divider point
With for two groups of power signals, every group of power signal includes at least two-way power signal, and one in wherein first group of power signal
Road power signal through second phase shifter change phase after, then in first group of power signal remaining power signal warp described in
Second power combiner synthesizes pulsed power signal output；Power signal all the way in second group of power signal is through the third
After phase shifter changes phase, then with remaining power signal in second group of power signal arteries and veins is synthesized through the third power combiner
Rush power signal output.
7. pulse power supply as claimed in claim 6, which is characterized in that the frequency in the continuous wave power source and the matching
Device, the power divider, second phase shifter, second power combiner, the third phase shifter, the third work(
The frequency of rate synthesizer is equal；
And the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz or 100MHz.
8. pulse power supply as claimed in claim 6, which is characterized in that second phase shifter and the third phase shifter are
Electronically controlled phase shifter or Mechanical course phase shifter.
9. pulse power supply as claimed in claim 6, which is characterized in that the phase shift number of degrees of second phase shifter are 180 degree,
And phase shifted time is identical；The phase shift number of degrees of the third phase shifter are 180 degree, and phase shifted time is identical.
10. pulse power supply as claimed in claim 6, which is characterized in that multiple output ends of the power divider export
Power signal ratio it is equal and immobilize.
11. a kind of semiconductor equipment, which is characterized in that including pulse power supply as described in any one in claim 1-5.
12. semiconductor equipment as claimed in claim 11, which is characterized in that the semiconductor equipment sets for physical vapour deposition (PVD)
It is standby；
The pulse power supply is one, the pedestal of the output end of the pulse power supply and the Pvd equipment or
Target is connected；Alternatively,
The pulse power supply is two, the base of the output end of one of pulse power supply and the Pvd equipment
Seat is connected, and the output end of another pulse power supply is connected with the target of the Pvd equipment.
13. semiconductor equipment as claimed in claim 11, which is characterized in that the semiconductor equipment sets for plasma etching
It is standby；
The pulse power supply is one, the pedestal of the output end of the pulse power supply and the etching apparatus or it is described etc. from
The plasma producing apparatus of daughter etching apparatus is connected；Alternatively,
The pulse power supply is two, the base of the output end of one of pulse power supply and the plasma etch apparatus
Seat is connected, and the output end of another pulse power supply is connected with the plasma producing apparatus of the plasma etch apparatus.
14. a kind of semiconductor equipment, which is characterized in that including such as claim 6-10 any one of them pulse power supply.
15. semiconductor equipment as claimed in claim 14, which is characterized in that the semiconductor equipment sets for physical vapour deposition (PVD)
It is standby；
One output end of the pulse power supply is connected with the pedestal of the Pvd equipment；The pulse power supply
Another output end be connected with the target of the Pvd equipment.
16. semiconductor equipment as claimed in claim 14, which is characterized in that the semiconductor equipment sets for plasma etching
It is standby；
One output end of the pulse power supply is connected with the pedestal of the plasma etch apparatus；The pulse power supply
Another output end be connected with the plasma producing apparatus of the plasma etch apparatus.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259434A (en) * | 2020-11-04 | 2021-01-22 | 大连理工大学 | Discharge control system driven by arbitrary waveform |
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