CN105206494A - Impedance matching method of pulse RF power supply and matching method of plasma equipment - Google Patents
Impedance matching method of pulse RF power supply and matching method of plasma equipment Download PDFInfo
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Abstract
The invention relates to an impedance matching method of a pulse RF power supply and a matching method of plasma equipment. The impedance matching method of the pulse RF power supply comprises a step of (S1) setting an impedance adjusting element at a preset value and setting the pulse frequency of the pulse RF power supply as a preset pulse frequency, (S2) judging whether the preset pulse frequency is larger than a pulse threshold frequency or not, and going to (S3) if so, (S3) allowing the pulse frequency of the RF power supply to be equal to the pulse threshold frequency, starting the pulse RF power supply, realizing sweep frequency matching under an automatic RF sweep frequency function, and switching the pulse frequency of the pulse RF power supply as a preset pulse frequency after matching, (S4) starting the pulse RF power supply, and realizing sweep frequency matching under the automatic RF sweep frequency function. According to the impedance matching method of the pulse RF power supply, the difficulty of realizing impedance matching by the RF power supply can be reduced, thus the matching precision and matching stability of the pulse RF power supply can be improved, and thus the stability of the process is improved.
Description
Technical field
The invention belongs to semiconductor equipment manufacturing technology field, be specifically related to a kind of impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus.
Background technology
Plasma apparatus is applied to manufacturing in the preparation technology of integrated circuit (IC) or MEMS widely, mainly exports radio-frequency power by radio-frequency power supply and excites process gas to form plasma.
At present, plasma apparatus comprises capacitance coupling plasma (CCP) equipment, inductively coupled plasma (ICP) equipment, surface wave or Ecr plasma (ECR) equipment.Wherein, CCP equipment utilizes capacitive coupling to produce plasma, and its structure is simple, cost is low and the easy plasma producing Large-Area-Uniform branch, is applicable to the etching technics of the types of membranes such as medium; ECR equipment can obtain the higher plasma of density under lower air pressure, but its cost is relatively high; ICP equipment not only can obtain highdensity plasma under lower air pressure, and structure is simple, cost is low, and its can to for generation of and the radio frequency source of plasma density determined, and carry out independent control for the radio frequency source determining the particle energy incided on wafer, be applicable to the etching technics of the material such as metal and semiconductor.
Fig. 1 is the structural representation of inductively coupled plasma equipment, refer to Fig. 1, this ICP equipment comprises reaction chamber 10, the roof of reaction chamber 10 is embedded with medium window 11, above medium window 11, be provided with induction coil 12, induction coil 12 is electrically connected with the first radio-frequency power supply 14 by the first impedance matching box 13, forms plasma in order to the process gas in provocative reaction chamber 10, that is, the first radio-frequency power supply 14 be for generation of and the radio frequency source of plasma density determined; The electrostatic chuck 15 for bearing wafer S is provided with in reaction chamber 10, electrostatic chuck 15 is electrically connected with the second radio-frequency power supply 17 by the second impedance matching box 16, move towards wafer S in order to attract plasma, to realize plasma, the techniques such as deposition, etching are completed to wafer S, that is, the second radio-frequency power supply 17 is the radio frequency source for determining the particle energy incided on wafer.
Above-mentioned ICP equipment is adopted to carry out etching technics to wafer, when etching technics characteristic size to 20nm and following time, because the first radio-frequency power supply 14 and the second radio-frequency power supply 17 are continuous wave radio-frequency power supply, plasma body induction damage (PID) can be caused to wafer, for avoiding the generation of PID, then the first radio-frequency power supply 14 and/or the second radio-frequency power supply 17 adopt pulse radiation frequency power supply, but existing paired pulses radio-frequency power supply carries out impedance matching existence and stability difference and the low problem of matching precision.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus, the difficulty that radio-frequency power supply realizes impedance matching can be reduced, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
For solving the problem, the invention provides a kind of impedance matching methods of pulse radiation frequency power supply, described pulse radiation frequency power supply is connected with impedance matching box, described impedance matching box comprises impedance adjustable element, described pulse radiation frequency power supply has automated radio frequency frequency sweep function, the impedance matching methods of described pulse radiation frequency power supply comprises the following steps: step S1, set described impedance adjustable element and be positioned at default value, and the pulse frequency setting described pulse radiation frequency power supply is predetermined pulse frequency; Step S2, judges whether described predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S3; If not, then step S4 is entered; Step S3, the pulse frequency of described pulse radiation frequency power supply is made to equal described pulse threshold frequency, and open described pulse radiation frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of described pulse radiation frequency power supply is made to switch to described predetermined pulse frequency; Step S4, opens described pulse radiation frequency power supply, and carries out frequency sweep coupling under its automated radio frequency frequency sweep function.
Wherein, described default value is preset as the numerical value near match point.
Wherein, the scope of described pulse threshold frequency is not more than 1000Hz.
Wherein, described pulse threshold frequency is 500Hz, 800Hz or 1000Hz.
Wherein, realize impedance matching in described step S3 and/or step S4 after, also comprise step S5, keep the current radio frequency frequency of described pulse radiation frequency power supply constant.
Wherein, in described step S1, also comprise the pulse duty factor setting described pulse radiation frequency power supply.
Wherein, open described pulse radiation frequency power supply in described step S3 and step S4 before, also comprise the pulse duty factor setting described pulse radiation frequency power supply.
Wherein, realize impedance matching in described step S3 and/or step S4 after, also comprise step S5, keep the current radio frequency frequency of described pulse duty factor and described pulse radiation frequency power supply constant.
As another one technical scheme, the present invention also provides a kind of matching process of plasma apparatus, described plasma apparatus is inductively coupled plasma equipment, described inductively coupled plasma equipment comprises reaction chamber, above described reaction chamber roof, be provided with inductance-coupled coil, described inductance-coupled coil is electrically connected with the first radio-frequency power supply by the first impedance matching box; Electrostatic chuck is provided with bottom described reaction chamber, described electrostatic chuck is connected with pulse radiation frequency power electric by the second impedance matching box, described second impedance matching box comprises impedance adjustable element, the matching process of this plasma apparatus comprises the following steps: step S1, and described first radio-frequency power supply realizes coupling; Step S2, sets described impedance adjustable element and be positioned at default value, and the pulse frequency setting described pulse radiation frequency power supply is predetermined pulse frequency; Step S3, judges whether described predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S4; If not, then step S5 is entered; Step S4, the pulse frequency of described pulse radiation frequency power supply is made to equal described pulse threshold frequency, and open described pulse radiation frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of described pulse radiation frequency power supply is made to switch to described predetermined pulse frequency; Step S5, opens described pulse radiation frequency power supply, and carries out frequency sweep coupling under its automated radio frequency frequency sweep function.
As another one technical scheme, the present invention also provides a kind of matching process of plasma apparatus, described plasma apparatus is capacitance coupling plasma equipment, described capacitance coupling plasma equipment comprises reaction chamber, be provided with top electrode above in described reaction chamber, described top electrode is connected with pulse radiation frequency power electric by impedance matching box; The bottom electrode corresponding with described top electrode is provided with on bottom described reaction chamber, described bottom electrode ground connection, described impedance matching box comprises impedance adjustable element, the matching process of this plasma apparatus comprises the following steps: step S1, set described impedance adjustable element and be positioned at default value, and the pulse frequency setting described pulse radiation frequency power supply is predetermined pulse frequency; Step S2, judges whether described predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S3; If not, then step S4 is entered; Step S3, the pulse frequency of described pulse radiation frequency power supply is made to equal described pulse threshold frequency, and open described pulse radiation frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of described pulse radiation frequency power supply is made to switch to described predetermined pulse frequency; Step S4, opens described pulse radiation frequency power supply, and carries out frequency sweep coupling under its automated radio frequency frequency sweep function.
The present invention has following beneficial effect:
The impedance matching methods of pulse radiation frequency power supply provided by the invention, it is by judging whether predetermined pulse frequency is greater than pulse threshold frequency, if, then predetermined pulse frequency is not easy to realize impedance matching, therefore, in this case, then enter step S3, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, namely, the pulse frequency of pulse radiation frequency power supply is made to be the pulse frequency easily realizing impedance matching, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, and after realization coupling, need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for this technique after build-up of luminance coupling, if not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then enter step S4, direct unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore do not need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, subsequent technique can be carried out under the predetermined pulse frequency condition needed for this technique.As from the foregoing, when the predetermined pulse frequency that can be implemented in needed for technique is greater than pulse threshold frequency, reduce the difficulty that radio-frequency power supply realizes impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
The matching process of plasma apparatus provided by the invention, this plasma apparatus is inductively coupled plasma equipment, it is by judging whether predetermined pulse frequency is greater than pulse threshold frequency, if, then predetermined pulse frequency is not easy to realize impedance matching, therefore, in this case, then enter step S4, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, namely, the pulse frequency of pulse radiation frequency power supply is made to be the pulse frequency easily realizing impedance matching, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, and after realization coupling, need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for this technique after build-up of luminance coupling, if not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then enter step S5, direct unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore do not need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, subsequent technique can be carried out under the predetermined pulse frequency condition needed for this technique.As from the foregoing, when the predetermined pulse frequency that can be implemented in needed for technique is greater than pulse threshold frequency, reduce the difficulty that radio-frequency power supply realizes impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
The matching process of plasma apparatus provided by the invention, this plasma apparatus is capacitance coupling plasma equipment, it is by judging whether predetermined pulse frequency is greater than pulse threshold frequency, if, then predetermined pulse frequency is not easy to realize impedance matching, therefore, in this case, then enter step S3, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, namely, the pulse frequency of pulse radiation frequency power supply is made to be the pulse frequency easily realizing impedance matching, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, and after realization coupling, need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for this technique after build-up of luminance coupling, if not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then enter step S4, direct unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore do not need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, subsequent technique can be carried out under the predetermined pulse frequency condition needed for this technique.As from the foregoing, when the predetermined pulse frequency that can be implemented in needed for technique is greater than pulse threshold frequency, reduce the difficulty that radio-frequency power supply realizes impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
Accompanying drawing explanation
Fig. 1 is the structural representation of inductively coupled plasma equipment;
The flow chart of the impedance matching methods of the pulse radiation frequency power supply that Fig. 2 provides for the embodiment of the present invention;
The flow chart of the matching process of a kind of plasma apparatus that Fig. 3 provides for the present embodiment;
Fig. 4 is the structural representation of capacitance coupling plasma equipment; And
The flow chart of the matching process of the another kind of plasma apparatus that Fig. 5 provides for the embodiment of the present invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the impedance matching methods of pulse radiation frequency power supply provided by the invention and the matching process of plasma apparatus are described in detail.
The flow chart of the impedance matching methods of the pulse radiation frequency power supply that Fig. 2 provides for the embodiment of the present invention.Refer to Fig. 2, the impedance matching methods of the pulse radiation frequency power supply that the embodiment of the present invention provides, wherein, pulse radiation frequency power supply is connected with impedance matching box, impedance matching box comprises impedance adjustable element, and impedance adjustable element comprises variable capacitance, and pulse radiation frequency power supply has automated radio frequency frequency sweep function, particularly, the impedance matching methods of this pulse radiation frequency power supply comprises the following steps:
Step S1, setting impedance adjustable element is positioned at default value, and the pulse frequency PF of setting pulse radiation frequency power supply be predetermined pulse frequency PF1 (namely, PF=PF1), wherein, predetermined pulse frequency PF1 is defined as the pulse frequency PF of the pulse radiation frequency power supply needed for technique, to meet technique needs;
Step S2, judges whether predetermined pulse frequency PF1 is greater than pulse threshold frequency PF2, if so, then enters step S3; If not, then step S4 is entered;
Step S3, the pulse frequency PF of pulse radiation frequency power supply is made to equal pulse threshold frequency PF2 (namely, PF=PF2), and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, make the pulse frequency PF of pulse radiation frequency power supply switch to predetermined pulse frequency PF1 (that is, PF=PF1);
Step S4, unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function.
In the present embodiment, as shown in Figure 2, step S1 comprises the following steps:
Step S11, setting impedance adjustable element is positioned at default value, preferably, default value is preset as the numerical value near match point, the numerical value of so-called match point is defined as impedance adjustable element place numerical value corresponding when pulse radiation frequency power supply mates, by the numerical value of default value near match point, this can make to realize impedance matching very soon under automated radio frequency frequency sweep function, thus can improve matching efficiency; Particularly, if impedance adjustable element is variable capacitance, the matched position of the numerical value corresponding variable electric capacity of match point, predeterminated position can be in by default variable capacitance to realize impedance adjustable original paper and be positioned at default value, therefore, preferably, the fixed position of presetting is the position near matched position.
Step S12, the pulse frequency PF of setting pulse radiation frequency power supply is predetermined pulse frequency PF1, and in some technical process, the pulse frequency PF needed for technique is comparatively large, that is, the value of predetermined pulse frequency PF1 is larger.
Find in actual applications: the higher meeting of pulse frequency PF of pulse radiation frequency power supply causes impedance matching difficulties, that is, cause build-up of luminance to mate difficulty.For this reason, setting pulse threshold frequency PF2 can be carried out based on experience value, and the value of setting pulse threshold frequency PF2 is lower, that is, pulse threshold frequency PF2 is set to make pulse radiation frequency power supply easily realize the pulse frequency of impedance matching (that is, build-up of luminance coupling), preferably, the scope of pulse threshold frequency PF2 is not more than 1000Hz, and further preferably, pulse threshold frequency PF2 is 500Hz, 800Hz or 1000Hz.
Therefore, in step s 2, judge whether predetermined pulse frequency PF1 is greater than pulse threshold frequency PF2, if, then predetermined pulse frequency PF1 is not easy to realize impedance matching, in other words, the pulse frequency PF of pulse radiation frequency power supply is the pulse frequency being not easy to realize impedance matching, therefore, in this case, then enter step S3, the pulse frequency PF of pulse radiation frequency power supply is made to equal pulse threshold frequency PF2, namely, the pulse frequency PF of pulse radiation frequency power supply is made to be the pulse frequency easily realizing impedance matching, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, and after realization coupling, need to make the pulse frequency PF of pulse radiation frequency power supply to switch to predetermined pulse frequency PF1 needed for technique, to realize carrying out technique under the predetermined pulse frequency PF1 condition needed for this technique after build-up of luminance coupling,
If not, then predetermined pulse frequency PF1 easily realizes impedance matching, in other words, the pulse frequency PF of pulse radiation frequency power supply is the pulse frequency easily realizing impedance matching, therefore, in this case, then enter step S4, direct unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, because the pulse frequency PF of now pulse radiation frequency power supply is predetermined pulse frequency PF1, therefore do not need to make the pulse frequency PF of pulse radiation frequency power supply to switch to predetermined pulse frequency PF1 needed for technique, can realize carrying out subsequent technique under the predetermined pulse frequency PF1 condition needed for this technique.
As from the foregoing, when the predetermined pulse frequency PF1 needed for technique is greater than pulse threshold frequency PF2, the difficulty that radio-frequency power supply realizes impedance matching can be reduced, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
In the present embodiment, particularly, in step S3 and step S4 before unbalanced pulse radio-frequency power supply, also comprise the pulse duty factor DC of setting pulse radiation frequency power supply, this pulse duty factor DC is specifically arranged based on experience value.In this case, after step S3 and/or step S4 realizes impedance matching, also comprise step S5, keep the current radio frequency frequency FF of pulse duty factor DC and pulse radiation frequency power supply constant, this can ensure in technical process that pulse radiation frequency power supply is positioned at impedance matching condition all the time, that is, technical process can be carried out under pulse radiation frequency power supply is impedance matching condition, thus the stability of technique can be ensured.
It should be noted that, in the present embodiment, in step S3 and step S4, before unbalanced pulse radio-frequency power supply, set the pulse duty factor DC of pulse radiation frequency power supply.But, the present invention is not limited thereto, in actual applications, also can set the pulse duty factor DC of pulse radiation frequency power supply in step sl, certainly, the pulse duty factor DC of pulse radiation frequency power supply can also be set in any time before unbalanced pulse radio-frequency power supply.
It should be noted that further, in actual applications, the step of the step S11 in step S1 and step S12 and in step sl the pulse duty factor DC of setting pulse radiation frequency power supply, not fixing sequencing, as long as can realize setting predetermined pulse frequency PF1 before unbalanced pulse radio-frequency power supply, impedance adjustable unit is positioned at default value and pulse duty factor.
Also it should be noted that, in the present embodiment, need the step of setting up the pulse duty factor DC setting pulse radiation frequency power supply.But, the present invention is not limited thereto, in actual applications, if the pulse duty factor DC of pulse radiation frequency power supply is fixed value, the pulse duty factor DC of paired pulses radio-frequency power supply is not then needed to arrange, therefore, in this case, realize impedance matching in step S3 and/or step S4 after, also comprise step S5, only need to keep the current radio frequency frequency FF of pulse radiation frequency power supply constant, this can ensure in technical process that pulse radiation frequency power supply is positioned at impedance matching condition all the time, namely, technical process can be carried out under pulse radiation frequency power supply is impedance matching condition, thus the stability of technique can be ensured.
As another one technical scheme, present invention also offers a kind of matching process of plasma apparatus, in the present embodiment, plasma apparatus is inductively coupled plasma equipment, this inductively coupled plasma (ICP) equipment comprises reaction chamber, inductance-coupled coil is provided with above reaction chamber roof, inductance-coupled coil is electrically connected with the first radio-frequency power supply by the first impedance matching box, first radio-frequency power supply comprises continuous wave radio-frequency power supply, the gas that first radio-frequency power supply is used in provocative reaction chamber forms plasma, in order to determine the plasma density in reaction chamber, electrostatic chuck is provided with bottom reaction chamber, electrostatic chuck is connected with pulse radiation frequency power electric by the second impedance matching box, this pulse radiation frequency power supply for attracting plasma towards the movement of wafers being positioned at electrostatic chuck, in order to determine the particle energy that incides on wafer, second impedance matching box comprises impedance adjustable element, the matching process of this plasma apparatus comprises the following steps:
Step S1, the first radio-frequency power supply realizes coupling;
Step S2, setting impedance adjustable element is positioned at default value, and the pulse frequency of setting pulse radiation frequency power supply is predetermined pulse frequency;
Step S3, judges whether predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S4; If not, then step S5 is entered;
Step S4, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of pulse radiation frequency power supply is made to switch to predetermined pulse frequency;
Step S5, unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function.
Particularly, impedance adjustable element is variable capacitance, variable capacitance is vacuum capacitance, usually, impedance adjustable element comprises the first variable capacitance with pulse radiation frequency power sources in parallel, and is positioned at the second variable capacitance with pulse radiation frequency power sources in series on pulse radiation frequency power transmission line, presets impedance adjustable element in step sl and is positioned at default value, that is, the first variable capacitance and the second variable capacitance is regulated to be positioned at default fixed position.
From above-mentioned steps S1, the matching process of the plasma apparatus that the present embodiment provides is after the first radio-frequency power supply realization coupling for continuous wave radio-frequency power supply is stablized, then adopts step S2 ~ S5 paired pulses radio-frequency power supply to mate; And step S1 ~ S4 is similar in the impedance matching methods of the pulse radiation frequency power supply that the step S2 described in the present embodiment ~ S5 and the above embodiment of the present invention provide, therefore, do not repeat them here.
In the present embodiment, the pulse radiation frequency power supply of ICP equipment has fixed RF frequency functionality and automated radio frequency frequency sweep function, and so-called fixed RF frequency functionality refers to that the rf frequency FF of pulse radiation frequency power supply is fixed value; So-called automated radio frequency frequency sweep function refers to that the rf frequency FF of pulse radiation frequency power supply changes automatically; And, second impedance matching box has Auto-matching function and fixing matching feature, so-called Auto-matching function refers to and regulates impedance adjustable unit to mate in real time, and so-called fixing matching feature refers to that impedance adjustable unit remains on that default value is constant to be mated.
The flow chart of the matching process of a kind of plasma apparatus that Fig. 3 provides for the present embodiment.Refer to Fig. 3, also comprising pulse radiation frequency power settings is in step sl automated radio frequency frequency sweep function, therefore, in step S3 and step S4 when opening pulse radiation frequency power supply, can realize mating under automated radio frequency frequency sweep function; Further, in step sl the second impedance matching box is set as fixing matching feature, to realize dividing into constant impedance adjustable element for default value at this fixing matching feature; In addition, for realizing keeping the pulse duty factor DC of pulse radiation frequency power supply and rf frequency FF constant in step s 5, be fixed RF frequency functionality by pulse radiation frequency power settings.
It should be noted that, in the present embodiment, first radio-frequency power supply of ICP equipment is continuous wave radio-frequency power supply, but, the present invention is not limited thereto, and in actual applications, the first radio-frequency power supply also can adopt pulse radiation frequency power supply, in this case, the step S2-step S5 that the present embodiment also can be adopted to provide realizes coupling.
The matching process of the plasma apparatus that the present embodiment provides, it is by judging whether predetermined pulse frequency is greater than pulse threshold frequency, if, then predetermined pulse frequency is not easy to realize impedance matching, therefore, in this case, then enter step S4, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, namely, the pulse frequency of pulse radiation frequency power supply is made to be the pulse frequency easily realizing impedance matching, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, and after realization coupling, need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for this technique after build-up of luminance coupling, if not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then enter step S5, direct unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore do not need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, subsequent technique can be carried out under the predetermined pulse frequency condition needed for this technique.As from the foregoing, when the predetermined pulse frequency that can be implemented in needed for technique is greater than pulse threshold frequency, reduce the difficulty that radio-frequency power supply realizes impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
As another one technical scheme, present invention also offers a kind of matching process of plasma apparatus, in the present embodiment, plasma apparatus is capacitance coupling plasma equipment, and Fig. 4 is the structural representation of capacitance coupling plasma equipment.The flow chart of the matching process of the second plasma apparatus that Fig. 5 provides for the embodiment of the present invention.See also Fig. 4 and Fig. 5, this capacitance coupling plasma (CCP) equipment comprises reaction chamber 20, top electrode 21 is provided with above in reaction chamber 20, top electrode 21 is electrically connected with pulse radiation frequency power supply 24 by impedance matching box 23, plasma is formed in order to the process gas in provocative reaction chamber 20, impedance adjustable element is provided with in this impedance matching box 23, this impedance matching box 23 comprises the first variable capacitance C1 in parallel with pulse radiation frequency power supply 24, and be positioned at the second variable capacitance C2 and inductance L that pulse radiation frequency power supply 24 transmission line is connected with pulse radiation frequency power supply 24, first variable capacitance C1 and the second variable capacitance C2 is impedance adjustable element, the bottom electrode 22 corresponding with top electrode 21 is provided with, bottom electrode 22 ground connection on bottom reaction chamber 20, the matching process of this plasma apparatus comprises the following steps:
Step S1, setting impedance adjustable element is positioned at default value, and the pulse frequency of setting pulse radiation frequency power supply is predetermined pulse frequency;
Step S2, judges whether predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S3; If not, then step S4 is entered;
Step S3, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of pulse radiation frequency power supply is made to switch to predetermined pulse frequency;
Step S4, unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function.
Preset impedance adjustable element in step sl and be positioned at default value, that is, regulate the first variable capacitance C1 and the second variable capacitance C2 to be positioned at default fixed position; Further, in the impedance matching methods of the pulse radiation frequency power supply that the step S1 described in the present embodiment ~ S4 and the above embodiment of the present invention provide, step S1 ~ S4 is similar, therefore, does not repeat them here.
In addition, compared with the second embodiment provided by the invention, the pulse radiation frequency power supply 24 in this CCP equipment also has fixed RF frequency functionality and automated radio frequency frequency sweep function, and impedance matching box 23 also has Auto-matching function and fixing matching feature.
Refer to Fig. 5, also comprise in step sl and pulse radiation frequency power supply 24 is set as automated radio frequency frequency sweep function, with in step S3 and step S4 when opening pulse radiation frequency power supply, can realize under automated radio frequency frequency sweep function realize coupling; And in step sl impedance matching box 23 is set as fixing matching feature, to realize dividing into constant impedance adjustable element for default value at this fixing matching feature; And, comprise the step of the pulse duty factor DC of setting pulse radiation frequency power supply in step sl; In addition, for realizing keeping the pulse duty factor DC of pulse radiation frequency power supply and rf frequency FF constant in step s 5, be fixed RF frequency functionality by pulse radiation frequency power settings.
The matching process of plasma apparatus provided by the invention, it is by judging whether predetermined pulse frequency is greater than pulse threshold frequency, if, then predetermined pulse frequency is not easy to realize impedance matching, therefore, in this case, then enter step S3, the pulse frequency of pulse radiation frequency power supply is made to equal pulse threshold frequency, namely, the pulse frequency of pulse radiation frequency power supply is made to be the pulse frequency easily realizing impedance matching, and unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, and after realization coupling, need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for this technique after build-up of luminance coupling, if not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then enter step S4, direct unbalanced pulse radio-frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore do not need to make the pulse frequency of pulse radiation frequency power supply to switch to predetermined pulse frequency needed for technique, subsequent technique can be carried out under the predetermined pulse frequency condition needed for this technique.As from the foregoing, when the predetermined pulse frequency that can be implemented in needed for technique is greater than pulse threshold frequency, reduce the difficulty that radio-frequency power supply realizes impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of coupling, thus improve the stability of technique.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. the impedance matching methods of a pulse radiation frequency power supply, described pulse radiation frequency power supply is connected with impedance matching box, described impedance matching box comprises impedance adjustable element, described pulse radiation frequency power supply has automated radio frequency frequency sweep function, it is characterized in that, the impedance matching methods of described pulse radiation frequency power supply comprises the following steps:
Step S1, sets described impedance adjustable element and be positioned at default value, and the pulse frequency setting described pulse radiation frequency power supply is predetermined pulse frequency;
Step S2, judges whether described predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S3; If not, then step S4 is entered;
Step S3, the pulse frequency of described pulse radiation frequency power supply is made to equal described pulse threshold frequency, and open described pulse radiation frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of described pulse radiation frequency power supply is made to switch to described predetermined pulse frequency;
Step S4, opens described pulse radiation frequency power supply, and carries out frequency sweep coupling under its automated radio frequency frequency sweep function.
2. the impedance matching methods of pulse radiation frequency power supply according to claim 1, is characterized in that, described default value is preset as the numerical value near match point.
3. the impedance matching methods of pulse radiation frequency power supply according to claim 1 and 2, is characterized in that, the scope of described pulse threshold frequency is not more than 1000Hz.
4. the impedance matching methods of pulse radiation frequency power supply according to claim 3, is characterized in that, described pulse threshold frequency is 500Hz, 800Hz or 1000Hz.
5. the impedance matching methods of pulse radiation frequency power supply according to claim 1, is characterized in that, after realizing impedance matching, also comprises step S5 in described step S3 and/or step S4, keeps the current radio frequency frequency of described pulse radiation frequency power supply constant.
6. the impedance matching methods of pulse radiation frequency power supply according to claim 1, is characterized in that, also comprises the pulse duty factor setting described pulse radiation frequency power supply in described step S1.
7. the impedance matching methods of pulse radiation frequency power supply according to claim 1, is characterized in that, before opening described pulse radiation frequency power supply, also comprises the pulse duty factor setting described pulse radiation frequency power supply in described step S3 and step S4.
8. the impedance matching methods of the pulse radiation frequency power supply according to claim 6 or 7, it is characterized in that, realize impedance matching in described step S3 and/or step S4 after, also comprise step S5, keep the current radio frequency frequency of described pulse duty factor and described pulse radiation frequency power supply constant.
9. the matching process of a plasma apparatus, described plasma apparatus is inductively coupled plasma equipment, described inductively coupled plasma equipment comprises reaction chamber, above described reaction chamber roof, be provided with inductance-coupled coil, described inductance-coupled coil is electrically connected with the first radio-frequency power supply by the first impedance matching box; Electrostatic chuck is provided with bottom described reaction chamber, described electrostatic chuck is connected with pulse radiation frequency power electric by the second impedance matching box, described second impedance matching box comprises impedance adjustable element, it is characterized in that, the matching process of this plasma apparatus comprises the following steps:
Step S1, described first radio-frequency power supply realizes coupling;
Step S2, sets described impedance adjustable element and be positioned at default value, and the pulse frequency setting described pulse radiation frequency power supply is predetermined pulse frequency;
Step S3, judges whether described predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S4; If not, then step S5 is entered;
Step S4, the pulse frequency of described pulse radiation frequency power supply is made to equal described pulse threshold frequency, and open described pulse radiation frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of described pulse radiation frequency power supply is made to switch to described predetermined pulse frequency;
Step S5, opens described pulse radiation frequency power supply, and carries out frequency sweep coupling under its automated radio frequency frequency sweep function.
10. the matching process of a plasma apparatus, described plasma apparatus is capacitance coupling plasma equipment, described capacitance coupling plasma equipment comprises reaction chamber, be provided with top electrode above in described reaction chamber, described top electrode is connected with pulse radiation frequency power electric by impedance matching box; Be provided with the bottom electrode corresponding with described top electrode on bottom described reaction chamber, described bottom electrode ground connection, described impedance matching box comprises impedance adjustable element, it is characterized in that, the matching process of this plasma apparatus comprises the following steps:
Step S1, sets described impedance adjustable element and be positioned at default value, and the pulse frequency setting described pulse radiation frequency power supply is predetermined pulse frequency;
Step S2, judges whether described predetermined pulse frequency is greater than pulse threshold frequency, if so, then enters step S3; If not, then step S4 is entered;
Step S3, the pulse frequency of described pulse radiation frequency power supply is made to equal described pulse threshold frequency, and open described pulse radiation frequency power supply, and frequency sweep coupling is carried out under its automated radio frequency frequency sweep function, further, after coupling, the pulse frequency of described pulse radiation frequency power supply is made to switch to described predetermined pulse frequency;
Step S4, opens described pulse radiation frequency power supply, and carries out frequency sweep coupling under its automated radio frequency frequency sweep function.
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