CN105206494B - The impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus - Google Patents
The impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus Download PDFInfo
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- CN105206494B CN105206494B CN201410272429.6A CN201410272429A CN105206494B CN 105206494 B CN105206494 B CN 105206494B CN 201410272429 A CN201410272429 A CN 201410272429A CN 105206494 B CN105206494 B CN 105206494B
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Abstract
The present invention relates to the impedance matching methods and the matching process of plasma apparatus of pulse radiation frequency power supply, the impedance matching methods of pulse radiation frequency power supply include S1, and the pulse frequency for setting impedance adjustable element positioned at default value and pulse radiation frequency power supply is predetermined pulse frequency；Whether S2, judge predetermined pulse frequency more than pulse threshold frequency, if so, into S3；If it is not, into S4；S3, makes the pulse frequency of pulse radiation frequency power supply be equal to pulse threshold frequency, unbalanced pulse radio-frequency power supply, and realizes that frequency sweep is matched under its automated radio frequency frequency sweep function, the pulse frequency of pulse radiation frequency power supply is switched to predetermined pulse frequency after matching；S4, unbalanced pulse radio-frequency power supply, and realize that frequency sweep is matched under its automated radio frequency frequency sweep function.The impedance matching methods of pulse radiation frequency power supply can reduce radio-frequency power supply and realize the difficulty of impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of matching, so as to improve the stability of technique.
Description
Technical field
The invention belongs to semiconductor equipment manufacturing technology field, and in particular to a kind of impedance matching side of pulse radiation frequency power supply
The matching process of method and plasma apparatus.
Background technology
Plasma apparatus are widely applied in the preparation technology for manufacture IC or MEMS, are mainly borrowed
Help radio-frequency power supply to export radio-frequency power to excite process gas to form plasma.
At present, plasma apparatus include capacitance coupling plasma (CCP) equipment, inductively coupled plasma (ICP)
Equipment, surface wave or Ecr plasma (ECR) equipment.Wherein, CCP equipment is produced using capacitive coupling
Plasma, the plasma of its simple structure, low cost and the uniform branch of easy generation large area, it is adaptable to the type such as medium
The etching technics of film；ECR equipment can obtain density plasma higher under relatively low air pressure, but its cost is relatively
It is high；ICP equipment can not only obtain highdensity plasma, and simple structure under relatively low air pressure, low cost, and
It can be to for producing and the radio frequency source of plasma density that determines, and for determining to incide the particle energy on chip
The radio frequency source of amount is independently controlled, it is adaptable to the etching technics of the material such as metal and semiconductor.
Fig. 1 is the structural representation of inductively coupled plasma equipment, refers to Fig. 1, and the ICP equipment includes reaction chamber
10, medium window 11 is embedded with the roof of reaction chamber 10, the top of medium window 11 is provided with induction coil 12, the line of induction
Circle 12 is electrically connected by the first impedance matching box 13 with the first radio-frequency power supply 14, to the process gas in provocative reaction chamber 10
Form plasma, i.e. the first radio-frequency power supply 14 is for producing and the radio frequency source of plasma density that determines；In reaction chamber
The electrostatic chuck 15 for bearing wafer S is provided with room 10, electrostatic chuck 15 is penetrated by the second impedance matching box 16 with second
Frequency power 17 is electrically connected, and is used to attract plasma to be moved towards chip S, to realize that plasma completes deposition, quarter to chip S
The techniques such as erosion, i.e. the second radio-frequency power supply 17 is the radio frequency source that the particle energy on chip is incided for decision.
Technique is performed etching to chip using above-mentioned ICP equipment, when etching technics characteristic size to 20nm and it is following when,
Because the first radio-frequency power supply 14 and the second radio-frequency power supply 17 are continuous wave radio-frequency power supply, plasma-induced damage can be caused to chip
Wound (PID), to avoid the generation of PID, then the first radio-frequency power supply 14 and/or the second radio-frequency power supply 17 use pulse radiation frequency power supply,
However, existing carry out impedance matching existence and stability difference and the low problem of matching precision to pulse radiation frequency power supply.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of pulse radiation frequency power supply
Impedance matching methods and plasma apparatus matching process, the difficulty that radio-frequency power supply realizes impedance matching can be reduced, because
And the matching precision of pulse radiation frequency power supply and the stability of matching can be improved, so as to improve the stability of technique.
To solve the above problems, the invention provides a kind of impedance matching methods of pulse radiation frequency power supply, the pulse is penetrated
Frequency power is connected with impedance matching box, and the impedance matching box includes impedance adjustable element, and the pulse radiation frequency power supply has certainly
Dynamic radio frequency frequency sweep function, the impedance matching methods of the pulse radiation frequency power supply are comprised the following steps：Step S1, sets the impedance
Adjustable element is located at default value, and it is predetermined pulse frequency to set the pulse frequency of the pulse radiation frequency power supply；Step S2,
Whether the predetermined pulse frequency is judged more than pulse threshold frequency, if so, then entering step S3；If it is not, then entering step S4；
Step S3, makes the pulse frequency of the pulse radiation frequency power supply be equal to the pulse threshold frequency, and open the pulse radiation frequency electricity
Source, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, make the arteries and veins of the pulse radiation frequency power supply after matching
Frequency error factor is rushed for the predetermined pulse frequency；Step S4, opens the pulse radiation frequency power supply, and in its automated radio frequency frequency sweep work(
Can get off carries out frequency sweep matching.
Wherein, the default value is preset as being close to the numerical value of match point.
Wherein, the scope of the pulse threshold frequency is not more than 1000Hz.
Wherein, the pulse threshold frequency is 500Hz, 800Hz or 1000Hz.
Wherein, after realizing impedance matching in the step S3 and/or step S4, also including step S5, keep described
The current radio frequency frequency of pulse radiation frequency power supply is constant.
Wherein, the pulse duty factor of the setting pulse radiation frequency power supply is also included in the step S1.
Wherein, before opening the pulse radiation frequency power supply in the step S3 and step S4, also including setting the arteries and veins
Rush the pulse duty factor of radio-frequency power supply.
Wherein, after realizing impedance matching in the step S3 and/or step S4, also including step S5, keep described
The current radio frequency frequency of pulse duty factor and the pulse radiation frequency power supply is constant.
Used as another technical scheme, the present invention also provides a kind of matching process of plasma apparatus, the grade from
Daughter equipment is inductively coupled plasma equipment, and the inductively coupled plasma equipment includes reaction chamber, described anti-
Chamber roof top is answered to be provided with inductance-coupled coil, the inductance-coupled coil passes through the first impedance matching box and the first radio frequency
Power electric connection；The reaction chamber bottom is provided with electrostatic chuck, the electrostatic chuck by the second impedance matching box with
Pulse radiation frequency power electric connection, second impedance matching box includes impedance adjustable element, the match party of the plasma apparatus
Method is comprised the following steps：Step S1, first radio-frequency power supply realizes matching；Step S2, sets the impedance adjustable element position
In default value, and it is predetermined pulse frequency to set the pulse frequency of the pulse radiation frequency power supply；Step S3, judges described pre-
If whether pulse frequency is more than pulse threshold frequency, if so, then entering step S4；If it is not, then entering step S5；Step S4, makes
The pulse frequency of the pulse radiation frequency power supply is equal to the pulse threshold frequency, and opens the pulse radiation frequency power supply, and at it
Automated radio frequency frequency sweep function is got off and carries out frequency sweep matching, also, cuts the pulse frequency of the pulse radiation frequency power supply after matching
It is changed to the predetermined pulse frequency；Step S5, opens the pulse radiation frequency power supply, and enter under its automated radio frequency frequency sweep function
Row frequency sweep is matched.
Used as another technical scheme, the present invention also provides a kind of matching process of plasma apparatus, the grade from
Daughter equipment is capacitance coupling plasma equipment, and the capacitance coupling plasma equipment includes reaction chamber, described anti-
Top in chamber is answered to be provided with Top electrode, the Top electrode is by impedance matching box and pulse radiation frequency power electric connection；Described
Bottom electrode corresponding with the Top electrode, the bottom electrode ground connection, the impedance matching box bag are provided with reaction chamber bottom
Impedance adjustable element is included, the matching process of the plasma apparatus is comprised the following steps：Step S1, sets the impedance adjustable unit
Part is located at default value, and it is predetermined pulse frequency to set the pulse frequency of the pulse radiation frequency power supply；Step S2, judges institute
Whether predetermined pulse frequency is stated more than pulse threshold frequency, if so, then entering step S3；If it is not, then entering step S4；Step
S3, makes the pulse frequency of the pulse radiation frequency power supply be equal to the pulse threshold frequency, and opens the pulse radiation frequency power supply, and
Frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, makes the pulse frequency of the pulse radiation frequency power supply after matching
Rate switches to the predetermined pulse frequency；Step S4, opens the pulse radiation frequency power supply, and under its automated radio frequency frequency sweep function
To carry out frequency sweep matching.
The invention has the advantages that：
The impedance matching methods of the pulse radiation frequency power supply that the present invention is provided, it passes through to judge whether predetermined pulse frequency is more than
Pulse threshold frequency, if so, then predetermined pulse frequency is not easily accomplished impedance matching, therefore, in this case, then enter step
Rapid S3 so that the pulse frequency of pulse radiation frequency power supply is equal to pulse threshold frequency, i.e. the pulse frequency for making pulse radiation frequency power supply is
The pulse frequency of impedance matching, and unbalanced pulse radio-frequency power supply are easily realized, and is carried out under its automated radio frequency frequency sweep function
Frequency sweep is matched, and, it is necessary to so that default needed for the pulse frequency of pulse radiation frequency power supply switches to technique after matching is realized
Pulse frequency, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for the technique after build-up of luminance is matched；If it is not,
Then predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then into step S4, direct unbalanced pulse is penetrated
Frequency power, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, due to the pulse frequency of now pulse radiation frequency power supply
Be predetermined pulse frequency, thus need not cause pulse radiation frequency power supply pulse frequency switch to technique needed for predetermined pulse frequently
Rate, you can carry out subsequent technique under the predetermined pulse frequency condition needed for the technique.As from the foregoing, it is possible to achieve in technique institute
When the predetermined pulse frequency for needing is more than pulse threshold frequency, reduces radio-frequency power supply and realize the difficulty of impedance matching, thus can carry
The matching precision of high impulse radio-frequency power supply and the stability of matching, so as to improve the stability of technique.
The matching process of the plasma apparatus that the present invention is provided, the plasma apparatus set for inductively coupled plasma
Standby, whether it passes through to judge predetermined pulse frequency more than pulse threshold frequency, if so, then predetermined pulse frequency is not easily accomplished resistance
Anti- matching, therefore, in this case, then into step S4 so that the pulse frequency of pulse radiation frequency power supply is equal to pulse threshold
Frequency, i.e. the pulse frequency for making pulse radiation frequency power supply is easily to realize the pulse frequency of impedance matching, and unbalanced pulse radio frequency electrical
Source, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, and, it is necessary to so that pulse radiation frequency is electric after matching is realized
The pulse frequency in source switch to technique needed for predetermined pulse frequency, to realize after build-up of luminance is matched default needed for the technique
Subsequent technique is carried out under the conditions of pulse frequency；If it is not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this feelings
Under condition, then into step S5, direct unbalanced pulse radio-frequency power supply, and carry out frequency sweep under its automated radio frequency frequency sweep function
Match somebody with somebody, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore pulse radiation frequency power supply need not be caused
Pulse frequency switch to technique needed for predetermined pulse frequency, you can carried out under the predetermined pulse frequency condition needed for the technique
Subsequent technique.As from the foregoing, it is possible to achieve when the predetermined pulse frequency needed for technique is more than pulse threshold frequency, reduce radio frequency
Power supply realizes the difficulty of impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of matching, so that
Improve the stability of technique.
The matching process of the plasma apparatus that the present invention is provided, the plasma apparatus set for capacitance coupling plasma
Standby, whether it passes through to judge predetermined pulse frequency more than pulse threshold frequency, if so, then predetermined pulse frequency is not easily accomplished resistance
Anti- matching, therefore, in this case, then into step S3 so that the pulse frequency of pulse radiation frequency power supply is equal to pulse threshold
Frequency, i.e. the pulse frequency for making pulse radiation frequency power supply is easily to realize the pulse frequency of impedance matching, and unbalanced pulse radio frequency electrical
Source, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, and, it is necessary to so that pulse radiation frequency is electric after matching is realized
The pulse frequency in source switch to technique needed for predetermined pulse frequency, to realize after build-up of luminance is matched default needed for the technique
Subsequent technique is carried out under the conditions of pulse frequency；If it is not, then predetermined pulse frequency easily realizes impedance matching, therefore, in this feelings
Under condition, then into step S4, direct unbalanced pulse radio-frequency power supply, and carry out frequency sweep under its automated radio frequency frequency sweep function
Match somebody with somebody, because the pulse frequency of now pulse radiation frequency power supply is predetermined pulse frequency, therefore pulse radiation frequency power supply need not be caused
Pulse frequency switch to technique needed for predetermined pulse frequency, you can carried out under the predetermined pulse frequency condition needed for the technique
Subsequent technique.As from the foregoing, it is possible to achieve when the predetermined pulse frequency needed for technique is more than pulse threshold frequency, reduce radio frequency
Power supply realizes the difficulty of impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of matching, so that
Improve the stability of technique.
Brief description of the drawings
Fig. 1 is the structural representation of inductively coupled plasma equipment；
Fig. 2 is the flow chart of the impedance matching methods of pulse radiation frequency power supply provided in an embodiment of the present invention；
A kind of flow chart of the matching process of plasma apparatus that Fig. 3 is provided for the present embodiment；
Fig. 4 is the structural representation of capacitance coupling plasma equipment；And
Fig. 5 is the flow chart of the matching process of another plasma apparatus provided in an embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus of offer are described in detail.
Fig. 2 is the flow chart of the impedance matching methods of pulse radiation frequency power supply provided in an embodiment of the present invention.Refer to Fig. 2,
The impedance matching methods of pulse radiation frequency power supply provided in an embodiment of the present invention, wherein, pulse radiation frequency power supply and impedance matching box phase
Even, impedance matching box includes impedance adjustable element, and impedance adjustable element includes variable capacitance, and pulse radiation frequency power supply has automatic shooting
Frequency frequency sweep function, specifically, the impedance matching methods of the pulse radiation frequency power supply are comprised the following steps：
Step S1, setting impedance adjustable element is located at default value, and the pulse frequency PF for setting pulse radiation frequency power supply
It is predetermined pulse frequency PF1 (that is, PF=PF1), wherein, the pulse radiation frequency needed for predetermined pulse frequency PF1 is defined as technique is electric
The pulse frequency PF in source, to meet technique needs；
Whether step S2, judge predetermined pulse frequency PF1 more than pulse threshold frequency PF2, if so, then entering step S3；
If it is not, then entering step S4；
Step S3, makes the pulse frequency PF of pulse radiation frequency power supply be equal to pulse threshold frequency PF2 (that is, PF=PF2), and open
Pulse radiation frequency power supply is opened, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, make pulse radiation frequency after matching
The pulse frequency PF of power supply switches to predetermined pulse frequency PF1 (that is, PF=PF1)；
Step S4, unbalanced pulse radio-frequency power supply, and carry out frequency sweep matching under its automated radio frequency frequency sweep function.
In the present embodiment, as shown in Fig. 2 step S1 is comprised the following steps：
Step S11, setting impedance adjustable element is located at default value, it is preferable that default value is preset as being close to match point
Numerical value, the numerical value of so-called match point is defined as numerical value where corresponding impedance adjustable element when pulse radiation frequency power supply is matched, borrows
Default value is helped near the numerical value of match point, this can cause to realize impedance matching quickly under automated radio frequency frequency sweep function, from
And matching efficiency can be improved；Specifically, if impedance adjustable element is variable capacitance, the numerical value corresponding variable electric capacity of match point
Matched position, can realize that impedance adjustable original paper is located at default value in predeterminated position by default variable capacitance, therefore,
Preferably, default fixed position is the position for being close to matched position.
Step S12, the pulse frequency PF for setting pulse radiation frequency power supply is predetermined pulse frequency PF1, in some technical process
In, the pulse frequency PF needed for technique is larger, i.e. the value of predetermined pulse frequency PF1 is larger.
Find in actual applications：The pulse frequency PF of pulse radiation frequency power supply is higher to cause impedance matching difficulties, i.e. make
Matched into build-up of luminance difficult.Therefore, can carry out setting pulse threshold frequency PF2, and setting pulse threshold frequency based on experience value
The value of PF2 is relatively low, that is to say, that pulse threshold frequency PF2 is configured to so that pulse radiation frequency power supply easily realizes impedance
The pulse frequency of matching (that is, build-up of luminance matching), it is preferable that the scope of pulse threshold frequency PF2 is not more than 1000Hz, further excellent
Selection of land, pulse threshold frequency PF2 is 500Hz, 800Hz or 1000Hz.
Therefore, in step s 2, whether predetermined pulse frequency PF1 is judged more than pulse threshold frequency PF2, if so, then pre-
If pulse frequency PF1 is not easily accomplished impedance matching, in other words, the pulse frequency PF of pulse radiation frequency power supply is to be not easily accomplished resistance
The pulse frequency of anti-matching, therefore, in this case, then into step S3 so that the pulse frequency PF of pulse radiation frequency power supply
Equal to pulse threshold frequency PF2, i.e. the pulse frequency PF for making pulse radiation frequency power supply is the pulse frequency for easily realizing impedance matching
Rate, and unbalanced pulse radio-frequency power supply, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, and realizing matching
Afterwards, it is necessary to so that predetermined pulse frequency PF1 needed for the pulse frequency PF of pulse radiation frequency power supply switches to technique, to realize rising
After brightness matching technique is carried out under the conditions of the predetermined pulse frequency PF1 needed for the technique；
If it is not, then predetermined pulse frequency PF1 easily realizes impedance matching, and in other words, the pulse frequency of pulse radiation frequency power supply
PF is the pulse frequency for easily realizing impedance matching, therefore, in this case, then into step S4, direct unbalanced pulse is penetrated
Frequency power, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, due to the pulse frequency of now pulse radiation frequency power supply
PF is predetermined pulse frequency PF1, thus need not cause pulse radiation frequency power supply pulse frequency PF switch to it is pre- needed for technique
If pulse frequency PF1, you can realization carries out subsequent technique under the conditions of the predetermined pulse frequency PF1 needed for the technique.
From the foregoing, it will be observed that when the predetermined pulse frequency PF1 needed for technique is more than pulse threshold frequency PF2, can reduce and penetrate
Frequency power realizes the difficulty of impedance matching, thus can improve the matching precision of pulse radiation frequency power supply and the stability of matching, from
And improve the stability of technique.
In the present embodiment, specifically, before unbalanced pulse radio-frequency power supply in step S3 and step S4, also including setting
The pulse duty factor DC of pulse radiation frequency power supply, pulse duty factor DC is specifically set based on experience value.In this case, in step
Rapid S3 and/or step S4 is realized after impedance matching, also including step S5, keeps pulse duty factor DC and pulse radiation frequency power supply
FF is constant for current radio frequency frequency, and this can ensure that pulse radiation frequency power supply is always positioned at impedance matching condition in technical process, i.e.
Technical process can be carried out in the case where pulse radiation frequency power supply is impedance matching condition, thereby may be ensured that the stability of technique.
It should be noted that in the present embodiment, being set before unbalanced pulse radio-frequency power supply in step S3 and step S4
The pulse duty factor DC of pulse radiation frequency power supply.But, the invention is not limited in this, in actual applications, it is also possible in step
The pulse duty factor DC of pulse radiation frequency power supply is set in S1, it is of course also possible to during any before unbalanced pulse radio-frequency power supply
The pulse duty factor DC of interior setting pulse radiation frequency power supply.
Explanation is needed further exist for, in actual applications, step S11 and step S12 in step S1 and in step
The step of pulse duty factor DC of pulse radiation frequency power supply is set in S1, the sequencing do not fixed, as long as can realize
Predetermined pulse frequency PF1, impedance adjustable unit are set before unbalanced pulse radio-frequency power supply and is located at default value and pulse duty factor
.
Also, it should be noted that in the present embodiment, it is necessary to set up to set the pulse duty factor DC of pulse radiation frequency power supply
The step of.But, the invention is not limited in this, in actual applications, if the pulse duty factor DC of pulse radiation frequency power supply is solid
Definite value, then need not be configured to the pulse duty factor DC of pulse radiation frequency power supply, therefore, in this case, in step S3
And/or after realizing impedance matching in step S4, also including step S5, it is only necessary to keep the current radio frequency of pulse radiation frequency power supply frequently
Rate FF is constant, and this can ensure that pulse radiation frequency power supply is always positioned at impedance matching condition in technical process, i.e. can be in pulse
Radio-frequency power supply thereby may be ensured that the stability of technique to carry out technical process under impedance matching condition.
As another technical scheme, present invention also offers a kind of matching process of plasma apparatus, in this reality
Apply in example, plasma apparatus are inductively coupled plasma equipment, inductively coupled plasma (ICP) equipment includes reaction
Chamber, is provided with inductance-coupled coil above reaction chamber roof, and inductance-coupled coil is by the first impedance matching box and the
One radio-frequency power supply is electrically connected, and the first radio-frequency power supply includes continuous wave radio-frequency power supply, and the first radio-frequency power supply is used for provocative reaction chamber
Interior gas forms plasma, is used to determine the plasma density in reaction chamber；It is provided with reaction chamber bottom quiet
Electric card disk, by the second impedance matching box and pulse radiation frequency power electric connection, the pulse radiation frequency power supply is used to attract electrostatic chuck
Plasma is moved towards the chip for being located at electrostatic chuck, is used to determine to incide the particle energy on chip；Second impedance
Orchestration includes impedance adjustable element；The matching process of the plasma apparatus is comprised the following steps：
Step S1, the first radio-frequency power supply realizes matching；
Step S2, setting impedance adjustable element is located at default value, and set the pulse frequency of pulse radiation frequency power supply as
Predetermined pulse frequency；
Whether step S3, judge predetermined pulse frequency more than pulse threshold frequency, if so, then entering step S4；If it is not, then
Into step S5；
Step S4, makes the pulse frequency of pulse radiation frequency power supply be equal to pulse threshold frequency, and unbalanced pulse radio-frequency power supply, and
Frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, cuts the pulse frequency of pulse radiation frequency power supply after matching
It is changed to predetermined pulse frequency；
Step S5, unbalanced pulse radio-frequency power supply, and carry out frequency sweep matching under its automated radio frequency frequency sweep function.
Specifically, impedance adjustable element is variable capacitance, and variable capacitance is vacuum capacitance, usually, impedance adjustable element
Including the first variable capacitance with pulse radiation frequency power sources in parallel, and on pulse radiation frequency power transmission line with pulse radiation frequency electricity
The second source-series variable capacitance, presets impedance adjustable element and is located at default value, i.e. regulation first can power transformation in step sl
Hold and the second variable capacitance is located at default fixed position.
From above-mentioned steps S1, it is being continuous wave radio frequency that the matching process of the plasma apparatus that the present embodiment is provided is
First radio-frequency power supply of power supply is realized after matching stabilization, then pulse radiation frequency power supply is matched using step S2~S5；And
The step of described in the present embodiment the impedance matching methods of pulse radiation frequency power supply that are provided with the above embodiment of the present invention of S2~S5
Middle step S1~S4 is similar, therefore, will not be repeated here.
In the present embodiment, the pulse radiation frequency power supply of ICP equipment has fixed RF frequency functionality and automated radio frequency frequency sweep
Function, so-called fixed RF frequency functionality refers to that the rf frequency FF of pulse radiation frequency power supply is fixed value；So-called automated radio frequency is swept
Frequency function refers to that the rf frequency FF of pulse radiation frequency power supply changes automatically；Also, the second impedance matching box has automatic
With function and fixed matching feature, so-called Auto-matching function refers to real-time regulation impedance adjustable unit to be matched, so-called
Fixed matching feature refers to that impedance adjustable unit is maintained at that default value is constant to be matched.
A kind of flow chart of the matching process of plasma apparatus that Fig. 3 is provided for the present embodiment.Fig. 3 is referred to, in step
Also include that by pulse radiation frequency power settings be automated radio frequency frequency sweep function in rapid S1, therefore, when beating in step S3 and step S4
When opening pulse radiation frequency power supply, you can realization is matched under automated radio frequency frequency sweep function；Also, in step sl by the second resistance
Anti- adaptation is set as fixing matching feature, to realize that it is present count to divide into constant impedance adjustable element in the fixation matching feature
Value；In addition, to realize keeping the pulse duty factor DC and rf frequency FF of pulse radiation frequency power supply constant in step s 5, by pulse
Radio-frequency power supply is set as fixed RF frequency functionality.
It should be noted that in the present embodiment, the first radio-frequency power supply of ICP equipment is continuous wave radio-frequency power supply, but,
The invention is not limited in this, in actual applications, the first radio-frequency power supply can also use pulse radiation frequency power supply, in such case
Under, it would however also be possible to employ the step of the present embodiment is provided S2- steps S5 realizes matching.
The matching process of the plasma apparatus that the present embodiment is provided, whether it passes through to judge predetermined pulse frequency more than arteries and veins
Threshold frequency is rushed, if so, then predetermined pulse frequency is not easily accomplished impedance matching, therefore, in this case, then into step
S4 so that the pulse frequency of pulse radiation frequency power supply is equal to pulse threshold frequency, i.e. make the pulse frequency of pulse radiation frequency power supply to hold
The pulse frequency of impedance matching, and unbalanced pulse radio-frequency power supply are easily realized, and is swept under its automated radio frequency frequency sweep function
Frequency is matched, and, it is necessary to so that default arteries and veins needed for the pulse frequency of pulse radiation frequency power supply switches to technique after matching is realized
Frequency is rushed, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for the technique after build-up of luminance is matched；If it is not, then
Predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then into step S5, direct unbalanced pulse radio frequency
Power supply, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is
Predetermined pulse frequency, thus need not cause pulse radiation frequency power supply pulse frequency switch to technique needed for predetermined pulse frequently
Rate, you can carry out subsequent technique under the predetermined pulse frequency condition needed for the technique.As from the foregoing, it is possible to achieve in technique institute
When the predetermined pulse frequency for needing is more than pulse threshold frequency, reduces radio-frequency power supply and realize the difficulty of impedance matching, thus can carry
The matching precision of high impulse radio-frequency power supply and the stability of matching, so as to improve the stability of technique.
As another technical scheme, present invention also offers a kind of matching process of plasma apparatus, in this reality
Apply in example, plasma apparatus are capacitance coupling plasma equipment, Fig. 4 is the structural representation of capacitance coupling plasma equipment
Figure.Fig. 5 is the flow chart of the matching process of second plasma apparatus provided in an embodiment of the present invention.Also referring to Fig. 4
And Fig. 5, capacitance coupling plasma (CCP) equipment includes reaction chamber 20, and top is provided with electricity in the reaction chamber 20
Pole 21, Top electrode 21 is electrically connected by impedance matching box 23 with pulse radiation frequency power supply 24, to the work in provocative reaction chamber 20
Skill gas forms plasma, and impedance adjustable element is provided with the impedance matching box 23, and the impedance matching box 23 includes and arteries and veins
Rush the first variable capacitance C1 of the parallel connection of radio-frequency power supply 24, and on the transmission line of pulse radiation frequency power supply 24 with pulse radiation frequency power supply
The second variable capacitance C2 and inductance L, the first variable capacitance C1 and the second variable capacitance C2 of 24 series connection are impedance adjustable element；
Bottom electrode 22 corresponding with Top electrode 21 is provided with the bottom of reaction chamber 20, bottom electrode 22 is grounded；The plasma apparatus
Matching process is comprised the following steps：
Step S1, setting impedance adjustable element is located at default value, and set the pulse frequency of pulse radiation frequency power supply as
Predetermined pulse frequency；
Whether step S2, judge predetermined pulse frequency more than pulse threshold frequency, if so, then entering step S3；If it is not, then
Into step S4；
Step S3, makes the pulse frequency of pulse radiation frequency power supply be equal to pulse threshold frequency, and unbalanced pulse radio-frequency power supply, and
Frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, cuts the pulse frequency of pulse radiation frequency power supply after matching
It is changed to predetermined pulse frequency；
Step S4, unbalanced pulse radio-frequency power supply, and carry out frequency sweep matching under its automated radio frequency frequency sweep function.
Impedance adjustable element is preset in step sl and is located at default value, i.e. regulation the first variable capacitance C1 and second can
Become electric capacity C2 and be located at default fixed position；Also, the S1 of the step of described in the present embodiment~S4 is carried with the above embodiment of the present invention
Step S1~S4 is similar in the impedance matching methods of the pulse radiation frequency power supply of confession, therefore, will not be repeated here.
In addition, compared with the second embodiment that the present invention is provided, the pulse radiation frequency power supply 24 in the CCP equipment also has solid
Determine rf frequency function and automated radio frequency frequency sweep function, impedance matching box 23 also has Auto-matching function and fixed matching work(
Energy.
Refer to Fig. 5, in step sl also include pulse radiation frequency power supply 24 is set as automated radio frequency frequency sweep function, with
In step S3 and step S4 when pulse radiation frequency power supply is opened, you can realize realizing matching under automated radio frequency frequency sweep function；With
And by impedance matching box 23 be set as fixing matching feature in step sl, to realize dividing into constant impedance in the fixation matching feature
Adjustable element is default value；And, in step sl including set pulse radiation frequency power supply pulse duty factor DC the step of；Separately
Outward, it is to realize keeping the pulse duty factor DC and rf frequency FF of pulse radiation frequency power supply constant in step s 5, by pulse radiation frequency
Power settings are fixed RF frequency functionality.
The matching process of the plasma apparatus that the present invention is provided, whether it passes through to judge predetermined pulse frequency more than pulse
Threshold frequency, if so, then predetermined pulse frequency is not easily accomplished impedance matching, therefore, in this case, then into step
S3 so that the pulse frequency of pulse radiation frequency power supply is equal to pulse threshold frequency, i.e. make the pulse frequency of pulse radiation frequency power supply to hold
The pulse frequency of impedance matching, and unbalanced pulse radio-frequency power supply are easily realized, and is swept under its automated radio frequency frequency sweep function
Frequency is matched, and, it is necessary to so that default arteries and veins needed for the pulse frequency of pulse radiation frequency power supply switches to technique after matching is realized
Frequency is rushed, to realize carrying out subsequent technique under the predetermined pulse frequency condition needed for the technique after build-up of luminance is matched；If it is not, then
Predetermined pulse frequency easily realizes impedance matching, therefore, in this case, then into step S4, direct unbalanced pulse radio frequency
Power supply, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, because the pulse frequency of now pulse radiation frequency power supply is
Predetermined pulse frequency, thus need not cause pulse radiation frequency power supply pulse frequency switch to technique needed for predetermined pulse frequently
Rate, you can carry out subsequent technique under the predetermined pulse frequency condition needed for the technique.As from the foregoing, it is possible to achieve in technique institute
When the predetermined pulse frequency for needing is more than pulse threshold frequency, reduces radio-frequency power supply and realize the difficulty of impedance matching, thus can carry
The matching precision of high impulse radio-frequency power supply and the stability of matching, so as to improve the stability of technique.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, essence of the invention is not being departed from
In the case of god and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of impedance matching methods of pulse radiation frequency power supply, the pulse radiation frequency power supply is connected with impedance matching box, the resistance
Anti- adaptation includes impedance adjustable element, and the pulse radiation frequency power supply has automated radio frequency frequency sweep function, it is characterised in that described
The impedance matching methods of pulse radiation frequency power supply are comprised the following steps：
Step S1, sets the impedance adjustable element and is located at default value, and the pulse frequency for setting the pulse radiation frequency power supply
Rate is predetermined pulse frequency；
Whether step S2, judge the predetermined pulse frequency more than pulse threshold frequency, if so, then entering step S3；If it is not, then
Into step S4；
Step S3, makes the pulse frequency of the pulse radiation frequency power supply be equal to the pulse threshold frequency, and open the pulse and penetrate
Frequency power, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, make the pulse radiation frequency power supply after matching
Pulse frequency switch to the predetermined pulse frequency；
Step S4, opens the pulse radiation frequency power supply, and carry out frequency sweep matching under its automated radio frequency frequency sweep function.
2. impedance matching methods of pulse radiation frequency power supply according to claim 1, it is characterised in that the default value is pre-
It is set to the numerical value of match point.
3. impedance matching methods of pulse radiation frequency power supply according to claim 1 and 2, it is characterised in that the pulse threshold
The scope of value frequency is not more than 1000Hz.
4. impedance matching methods of pulse radiation frequency power supply according to claim 3, it is characterised in that the pulse threshold is frequently
Rate is 500Hz, 800Hz or 1000Hz.
5. impedance matching methods of pulse radiation frequency power supply according to claim 1, it is characterised in that in the step S3
And/or after realizing impedance matching in step S4, also including step S5, keep the current radio frequency frequency of the pulse radiation frequency power supply
It is constant.
6. impedance matching methods of pulse radiation frequency power supply according to claim 1, it is characterised in that in the step S1
Also include the pulse duty factor of the setting pulse radiation frequency power supply.
7. impedance matching methods of pulse radiation frequency power supply according to claim 1, it is characterised in that in the step S3 and
Before the pulse radiation frequency power supply is opened in step S4, also including the pulse duty factor of the setting pulse radiation frequency power supply.
8. impedance matching methods of the pulse radiation frequency power supply according to claim 6 or 7, it is characterised in that in the step
Realized in S3 and/or step S4 after impedance matching, also including step S5, keep the pulse duty factor and the pulse radiation frequency
The current radio frequency frequency of power supply is constant.
9. a kind of matching process of plasma apparatus, the plasma apparatus are inductively coupled plasma equipment, described
Inductively coupled plasma equipment includes reaction chamber, is provided with inductance-coupled coil above the reaction chamber roof, institute
Inductance-coupled coil is stated to be electrically connected with the first radio-frequency power supply by the first impedance matching box；It is provided with the reaction chamber bottom
Electrostatic chuck, the electrostatic chuck is by the second impedance matching box and pulse radiation frequency power electric connection, second impedance matching
Device includes impedance adjustable element, it is characterised in that the matching process of the plasma apparatus is comprised the following steps：
Step S1, first radio-frequency power supply realizes matching；
Step S2, sets the impedance adjustable element and is located at default value, and the pulse frequency for setting the pulse radiation frequency power supply
Rate is predetermined pulse frequency；
Whether step S3, judge the predetermined pulse frequency more than pulse threshold frequency, if so, then entering step S4；If it is not, then
Into step S5；
Step S4, makes the pulse frequency of the pulse radiation frequency power supply be equal to the pulse threshold frequency, and open the pulse and penetrate
Frequency power, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, make the pulse radiation frequency power supply after matching
Pulse frequency switch to the predetermined pulse frequency；
Step S5, opens the pulse radiation frequency power supply, and carry out frequency sweep matching under its automated radio frequency frequency sweep function.
10. a kind of matching process of plasma apparatus, the plasma apparatus are capacitance coupling plasma equipment, described
Capacitance coupling plasma equipment includes reaction chamber, and top is provided with Top electrode, the Top electrode in the reaction chamber
By impedance matching box and pulse radiation frequency power electric connection；It is provided with the reaction chamber bottom corresponding with the Top electrode
Bottom electrode, bottom electrode ground connection, the impedance matching box includes impedance adjustable element, it is characterised in that the plasma
The matching process of equipment is comprised the following steps：
Step S1, sets the impedance adjustable element and is located at default value, and the pulse frequency for setting the pulse radiation frequency power supply
Rate is predetermined pulse frequency；
Whether step S2, judge the predetermined pulse frequency more than pulse threshold frequency, if so, then entering step S3；If it is not, then
Into step S4；
Step S3, makes the pulse frequency of the pulse radiation frequency power supply be equal to the pulse threshold frequency, and open the pulse and penetrate
Frequency power, and frequency sweep matching is carried out under its automated radio frequency frequency sweep function, also, make the pulse radiation frequency power supply after matching
Pulse frequency switch to the predetermined pulse frequency；
Step S4, opens the pulse radiation frequency power supply, and carry out frequency sweep matching under its automated radio frequency frequency sweep function.
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| EP3280225B1 (en) | 2016-08-05 | 2020-10-07 | NXP USA, Inc. | Defrosting apparatus with lumped inductive matching network and methods of operation thereof |
| CN108666197B (en) * | 2017-03-31 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Pulse power source and semiconductor equipment |
| EP3503679B1 (en) | 2017-12-20 | 2022-07-20 | NXP USA, Inc. | Defrosting apparatus and methods of operation thereof |
| EP3547801B1 (en) | 2018-03-29 | 2022-06-08 | NXP USA, Inc. | Defrosting apparatus and methods of operation thereof |
| CN110648888B (en) * | 2018-06-27 | 2020-10-13 | 北京北方华创微电子装备有限公司 | Radio frequency pulse matching method and device and pulse plasma generating system |
| CN110739197B (en) * | 2018-07-18 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Pulse signal control method and device, and plasma etching method and equipment |
| US11800608B2 (en) | 2018-09-14 | 2023-10-24 | Nxp Usa, Inc. | Defrosting apparatus with arc detection and methods of operation thereof |
| US11166352B2 (en) | 2018-12-19 | 2021-11-02 | Nxp Usa, Inc. | Method for performing a defrosting operation using a defrosting apparatus |
| CN109814006B (en) * | 2018-12-20 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Method and device for detecting abnormal discharge of etching system |
| US11039511B2 (en) | 2018-12-21 | 2021-06-15 | Nxp Usa, Inc. | Defrosting apparatus with two-factor mass estimation and methods of operation thereof |
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| US5474648A (en) * | 1994-07-29 | 1995-12-12 | Lsi Logic Corporation | Uniform and repeatable plasma processing |
| JP3630982B2 (en) * | 1997-05-22 | 2005-03-23 | キヤノン株式会社 | Plasma processing method and plasma processing apparatus |
| EP1023771B1 (en) * | 1997-09-17 | 2007-01-17 | Tokyo Electron Limited | Electrical impedance matching system and method |
| JP2000173982A (en) * | 1998-12-01 | 2000-06-23 | Matsushita Electric Ind Co Ltd | Plasma treating apparatus and method thereof |
| US7902991B2 (en) * | 2006-09-21 | 2011-03-08 | Applied Materials, Inc. | Frequency monitoring to detect plasma process abnormality |
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| KR101957348B1 (en) * | 2011-09-26 | 2019-03-12 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and plasma processing method |
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