CN101640969A - Matching method and plasma device applying same - Google Patents
Matching method and plasma device applying same Download PDFInfo
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- CN101640969A CN101640969A CN200810117344A CN200810117344A CN101640969A CN 101640969 A CN101640969 A CN 101640969A CN 200810117344 A CN200810117344 A CN 200810117344A CN 200810117344 A CN200810117344 A CN 200810117344A CN 101640969 A CN101640969 A CN 101640969A
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Abstract
The invention discloses a matching method and a plasma device applying the same. The method comprises the steps of: firstly, calculating a real part or an imaginary part of the resistance through thedigital quantity obtained by a sensor, secondly, taking difference values of real parts or imaginary parts of the resistance calculated by various control periods, and comparing the difference valuesto find a mutant difference value, wherein the control period in which the mutant difference value is positioned enters a luminance build-up band of a plasma; and finally, utilizing a corresponding control method to control a capacitor and carry out adjustment in the luminance build-up band until the matching is achieved. The method can ensure that the adjustment of a matcher during the matching is more targeted. The matcher enters the luminance build-up band and then adopts a corresponding mode for matching to avoid the condition of repetitive adjustment near the luminance build-up band, shortens matching time, optimizes matching path, and prolongs the service life of the matcher.
Description
Technical field
The present invention relates to a kind of plasma and take place and control technology, relate in particular to a kind of matching process and use the plasma device of this matching process.
Background technology
In RF (radio frequency) plasma producing apparatus, the RF generator of constant output impedance (being generally 50 Ω) produces the RF ripple of fixed frequency (being generally 13.56MHz), provide RF power to plasma reaction chamber, to excite the plasma that is used for etching or other technologies.In general, the constant output impedance of the impedance of the nonlinear load of plasma chamber and RF generator is also unequal, so between RF generator and plasma chamber, have serious impedance mismatching, make to have bigger reflection power on the RF transmission line, the power that the RF generator produces can't all flow to reaction chamber.
As shown in Figure 1, for addressing the above problem, between RF generator and reaction chamber, insert impedance matching box.This impedance matching box is made up of transducer, controller and actuator's three parts, and wherein actuator comprises the variable impedance element in the matching network and changes the drive unit etc. of its impedance.
Impedance matching box realizes that the principle of impedance matching is: by relevant parameters such as the voltage on the sensor RF transmission line, electric current, forward power, backward powers, provide the coupling control algolithm required input variable, and this input variable is inputed to controller; Controller is realized the coupling control algolithm of setting according to this input variable, and provides the adjustment amount of variable impedance element drive unit; Actuator changes the resistance value of variable impedance element according to the adjustment amount that controller provides, thereby makes the input impedance of matching network equal the constant output impedance of RF generator, and the two reaches coupling.At this moment, the reflection power on the RF transmission line is zero, and the power that the RF generator produces has all flowed to plasma chamber.
In the prior art, variable impedance element generally adopts electric capacity, electric capacity begins matching process from predeterminated position, data according to sensor, adopt certain control algolithm, as ratio, fuzzy algorithmic approach etc., calculate the adjustment amount of electric capacity, electric capacity constantly changes the position in matching process, enters the moment of plasma glow start when changing to appropriate position, promptly enter the plasma glow start band, after entering the plasma glow start band, mate with same process, proceed the electric capacity adjustment, up to finding match point, this moment, the position of electric capacity was matched position.
There is following shortcoming at least in above-mentioned prior art:
In matching process, owing to can't judge when build-up of luminance of plasma, may leave the build-up of luminance band again after making the electric capacity adjustment enter the build-up of luminance band, to cause repeatedly and adjust, thereby make match time longer, the coupling path is unreasonable.
Summary of the invention
The purpose of this invention is to provide a kind of match time of short, the coupling rational matching process in path and use the plasma apparatus of this matching process.
The objective of the invention is to be achieved through the following technical solutions:
Matching process of the present invention, comprise a plurality of coupling cycles, each coupling detects the value of a load impedance in the cycle, and carry out impedance matching according to the result who detects, it is characterized in that, in the process of plasma impedance coupling, at first detect the difference of impedance described in each coupling cycle and previous coupling cycle;
Then, the difference of a plurality of described impedances is compared, when sudden change appears in the difference of described impedance, think that the coupling cycle plasma at this difference place begins build-up of luminance, promptly enter the build-up of luminance band of plasma;
Afterwards, adopt the control corresponding method, control described impedance matching and in described build-up of luminance band, carry out.
Plasma device of the present invention comprises energy generating apparatus, adaptation, reaction chamber, and described adaptation adopts above-mentioned matching process to carry out impedance matching.
As seen from the above technical solution provided by the invention, matching process of the present invention, owing at first detect the difference of a coupling cycle and previous coupling cycle middle impedance, and compare by the difference to a plurality of impedances, plasma enters the build-up of luminance band when sudden change appears in the difference of impedance.In matching process, after the coupling cycle enters the plasma glow start band, can adopt the control corresponding method, control group coupling is carried out in the build-up of luminance band, until reaching coupling, can not cause repeatedly and adjust, thereby make match time short, the coupling path is reasonable.
Description of drawings
Fig. 1 is the structural representation of matching network in the prior art;
Fig. 2 is the flow chart of matching process specific embodiment one of the present invention.
Embodiment
Matching process of the present invention, its preferable embodiment be, comprises a plurality of coupling cycles, and each coupling detects the value of a load impedance in the cycle, and carry out impedance matching according to the result who detects.
In the process of plasma impedance coupling, can at first detect the difference of a coupling cycle and previous coupling cycle middle impedance; Difference to a plurality of impedances compares then, obtains the build-up of luminance band of plasma according to result relatively.In the process that the difference to a plurality of impedances compares, when sudden change appears in the difference of impedance, think that the coupling cycle plasma at this difference place begins build-up of luminance, promptly enter the build-up of luminance band of plasma; Afterwards, adopt the control corresponding method, the control group coupling is carried out in the build-up of luminance band.
Value when sudden change described here refers to that sudden change appears in the difference of impedance is the value when not suddenling change significantly, can set a threshold value, and the difference of the impedance in two coupling cycles is promptly thought and undergone mutation during greater than this threshold value.As set when the difference of impedance greater than the difference of the impedance in other cycle more than 10 times the time, think that promptly this difference undergos mutation.
The difference of above-described impedance can be the difference of impedance real part, also can be the difference of imaginary impedance, the difference of modulus of impedance value or the difference of impedance argument etc., can select for use wherein one or multinomial difference to compare as required.
When judging the build-up of luminance band of plasma as the difference by impedance real part, the ratio of value when setting the difference sudden change when impedance real part and the value when not suddenling change can think that the coupling cycle at this difference place enters the build-up of luminance band of plasma more than or equal to 24 the time; When the difference by imaginary impedance was judged the build-up of luminance band of plasma, the ratio of value when setting the difference sudden change when imaginary impedance and the value when not suddenling change can think that the coupling cycle at this difference place enters the build-up of luminance band of plasma more than or equal to 16 the time.
In the plasma impedance matching process, can realize by adjusting variable impedance element, as variable capacitance, after the coupling cycle enters the build-up of luminance band of plasma, can adopt the control corresponding method to carry out impedance matching, electric capacity or other variable impedance element are adjusted, until reaching coupling in the build-up of luminance band.Specifically can write down the adjustment position of this coupling electric capacity in the cycle obtaining coupling that plasma begins build-up of luminance after the cycle, begin from this position then, control capacitance is adjusted in the build-up of luminance band, can not cause near the build-up of luminance band and adjust repeatedly.Thereby make match time short, the coupling path is reasonable.
Plasma device of the present invention, its preferable embodiment be, comprises energy generating apparatus, adaptation, reaction chamber, and adaptation comprises transducer, controller, actuator, can adopt above-mentioned matching process to carry out impedance matching.
In cycle, the voltage and current information of a radio-frequency transmission line of sensor acquisition also inputs to controller with this information to concrete adaptation in each coupling;
Controller is according to the load impedance of each coupling of voltage and current information calculations in the cycle that receives, and calculate the difference of each coupling cycle and previous coupling load impedance in the cycle, difference to a plurality of impedances compares then, obtains the build-up of luminance band of plasma;
Afterwards, adopt the control corresponding method, the control group coupling is carried out in the build-up of luminance band.
Below by specific embodiment principle of the present invention and flow process are explained in detail:
Specific embodiment one as shown in Figure 2, selects for use real part of impedance as parameter, and concrete matching process is as follows:
At first the data that record by transducer are calculated the real part of impedance of each coupling in the cycle.Then by to each coupling in the cycle real part of impedance and the difference of the real part of impedance of previous coupling in the cycle compare, obtain the build-up of luminance band of plasma, adopt the control corresponding method to carry out impedance matching again, electric capacity is adjusted, in the build-up of luminance band until reaching coupling.
The principle of specific implementation is:
According to the digital quantity that transducer records, calculate the real part R of each coupling load impedance in the cycle.Setting the current coupling cycle of Control Software is the k cycle, and establishing the impedance real part that the k computation of Period goes out is R
kAccordingly, the previous coupling cycle is k-1 cycle, and establishing the impedance real part that k-1 computation of Period go out is R
K-1, other cycle impedance real part value by that analogy.Then the difference of the impedance real part in k cycle and the impedance real part in k-1 cycle may be defined as:
S
k＝|R
k-R
k-1| (1)
Like this, along with the operation of Control Software, can obtain a series of impedance difference:
S
k，S
k+1，…，S
k+a，…，S
k+n。
In the process of coupling, when plasma began build-up of luminance, a sudden change value can appear in the difference of impedance real part, and this sudden change value can be than other difference big tens times or hundreds of times.If S
K+aBe the numerical value of a sudden change, then illustrate at k+a cycle plasma to begin build-up of luminance that promptly the current location plasma of adjustable electric capacity begins build-up of luminance, entered the build-up of luminance band of plasma.
Hence one can see that, and since k+a cycle, the tunable capacitor position enters the plasma glow start band.Can adopt the control corresponding method to carry out impedance matching, electric capacity is adjusted in the build-up of luminance band, carry out impedance matching, whole matching process is as follows:
Electric capacity begins matching process from predeterminated position, data according to sensor, adopt certain control algolithm, as proportional algorithm, fuzzy algorithmic approach etc., calculate the adjustment amount of electric capacity, electric capacity constantly changes the position in matching process, plasma begins build-up of luminance when changing to k+a cycle, afterwards, can adopt corresponding control strategies, make under the process conditions of electric capacity after being fit to plasma glow start and adjust, proceed the electric capacity adjustment, up to finding match point, this moment, the position of electric capacity was matched position.
In the plasma processes process, the load impedance under the different technology conditions is different.Therefore, before the plasma glow start with build-up of luminance after load impedance and fluctuation range thereof have certain difference, but this difference is sometimes also not obvious, can cause electric capacity near situation about rising the bright spot repeatedly into and out of the build-up of luminance band.The present invention is by the sudden change of the impedance difference of two couplings in the cycle, find the moment of plasma glow start, after this just enter the plasma glow start band, the position that the electric capacity in the moment of record plasma glow start is adjusted, control capacitance is adjusted in the plasma glow start band then.
The control flow of specific embodiment is:
In matching process, under certain process conditions, by the digital quantity that transducer records, the impedance real part numerical value in each coupling cycle that calculates is as follows:
R
0=0.1764, R
1=0.1370, R
2=0.1325, R
3=0.0824, R
4=1.2587, R
5=1.2452, R
6=1.2326, according to formula (1), the impedance difference that can obtain each coupling cycle and previous coupling cycle is as follows:
S
1=R
1-R
0=0.1370-0.1764=0.0394 in like manner can get:
S
2＝0.0045、S
3＝0.0501、S
4＝1.1763、S
5＝0.0135、S
6＝0.0126。
From S
1To S
6In as can be seen, S
4It is a sudden change.Be S
4All enlarge markedly S than other several values
4With the ratio of other several values all greater than 24, therefore, at the period 4 plasma glow start, the position that can power transformation holds when the period 4 enter the plasma glow start band.In addition, as can be seen, enter the S behind the build-up of luminance band
5, S
6Be slightly less than and enter the preceding S of build-up of luminance band
2, S
3, by sudden change value S
4Just can do a tangible mark in the moment of plasma glow start, the position that the electric capacity in the moment of record plasma glow start is adjusted, after this just enter the plasma glow start band, electric capacity is adjusted, in the plasma glow start band up to reaching coupling.
Specific embodiment two, the imaginary part of selecting impedance for use are as parameter, and concrete matching process is as follows:
In matching process, under certain process conditions, by the digital quantity that transducer records, the imaginary impedance numerical value in each coupling cycle that calculates is as follows:
From S
1 *To S
6 *In as can be seen, S
4 *It is a sudden change.Be S
4 *All bigger than other several values, and with the ratio of other several differences all greater than 16, meet Rule of judgment.Therefore, at the period 4 plasma glow start, promptly the position of electric capacity when the period 4 entered the build-up of luminance band.Can adopt the control corresponding method then, electric capacity be adjusted, in the build-up of luminance band up to reaching coupling.
In the matching process of the present invention, by the digital quantity that transducer obtains, the real part of computing impedance or imaginary part.Impedance real part or the imaginary part that each control cycle is calculated got difference then, and each difference is compared, and finds the difference of sudden change.At this moment, the difference place coupling cycle of sudden change has entered the plasma glow start band, after having entered the plasma glow start band, adopt the control corresponding mode to mate, by determining the plasma glow start band in the adaptation matching process, can be so that the adjustment of adaptation in matching process be more targeted.Can not appear near situation about adjusting repeatedly the plasma glow start band, shorten match time, optimize the coupling path.And can avoid electric capacity to adjust repeatedly, also just prolonged the working life of adaptation.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (9)
1, a kind of matching process, comprise a plurality of coupling cycles, each coupling detects the value of a load impedance in the cycle, and carry out impedance matching according to the result who detects, it is characterized in that, in the process of plasma impedance coupling, at first detect the difference of impedance described in each coupling cycle and previous coupling cycle;
Then, the difference of a plurality of described impedances is compared, when sudden change appears in the difference of described impedance, think that the coupling cycle plasma at this difference place begins build-up of luminance, promptly enter the build-up of luminance band of plasma;
Afterwards, adopt the control corresponding method, control described impedance matching and in described build-up of luminance band, carry out.
2, matching process according to claim 1 is characterized in that, the difference of described impedance refers in the following difference one or multinomial: the difference of the difference of described real part of impedance, the difference of imaginary part, mould value, the difference of argument;
Value 10 times or 10 times or more of value when described sudden change refers to that sudden change appears in the difference of described impedance when not suddenling change.
3, matching process according to claim 2 is characterized in that, the ratio of the value of the value the during sudden change of the difference of described real part of impedance when not suddenling change is more than or equal to 24.
4, matching process according to claim 2 is characterized in that, the ratio of the value of the value the during sudden change of the difference of the imaginary part of described impedance when not suddenling change is more than or equal to 16.
5, matching process according to claim 1 is characterized in that, described impedance matching realizes by adjusting variable impedance element.
6, matching process according to claim 5 is characterized in that, described variable impedance element is an electric capacity.
7, matching process according to claim 6 is characterized in that, controls the method that described impedance matching carries out and comprise in described build-up of luminance band:
Obtaining coupling that described plasma begins build-up of luminance after the cycle, write down the adjustment position of electric capacity described in this coupling cycle, begin from this position then, control described electric capacity and in described build-up of luminance band, adjust.
8, a kind of plasma device comprises energy generating apparatus, adaptation, reaction chamber, it is characterized in that, described adaptation adopts each described matching process of claim 1 to 7 to carry out impedance matching.
9, plasma device according to claim 8, it is characterized in that, described adaptation comprises transducer, controller, actuator, and each coupling is in the cycle, and the voltage and current information of a radio-frequency transmission line of described sensor acquisition also inputs to described controller with this information;
Described controller is according to the load impedance of each coupling of described voltage and current information calculations in the cycle that receives, and calculate the difference of load impedance described in each coupling cycle and previous coupling cycle, difference to a plurality of described load impedances compares then, obtains the build-up of luminance band of plasma;
Afterwards, adopt the control corresponding method, control described impedance matching and in described build-up of luminance band, carry out.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103687267A (en) * | 2012-09-17 | 2014-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching device, impedance matching method and substrate processing equipment |
| CN105206494A (en) * | 2014-06-18 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method of pulse RF power supply and matching method of plasma equipment |
| CN110299277A (en) * | 2014-12-04 | 2019-10-01 | Mks仪器有限公司 | Adaptive periodic waveform controller |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4956582A (en) * | 1988-04-19 | 1990-09-11 | The Boeing Company | Low temperature plasma generator with minimal RF emissions |
| US5842154A (en) * | 1997-09-15 | 1998-11-24 | Eni Technologies, Inc. | Fuzzy logic tuning of RF matching network |
| US6263830B1 (en) * | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
| US6677828B1 (en) * | 2000-08-17 | 2004-01-13 | Eni Technology, Inc. | Method of hot switching a plasma tuner |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103687267A (en) * | 2012-09-17 | 2014-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching device, impedance matching method and substrate processing equipment |
| CN103687267B (en) * | 2012-09-17 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching device, impedance matching method and substrate processing equipment |
| CN105206494A (en) * | 2014-06-18 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method of pulse RF power supply and matching method of plasma equipment |
| CN110299277A (en) * | 2014-12-04 | 2019-10-01 | Mks仪器有限公司 | Adaptive periodic waveform controller |
| CN110299277B (en) * | 2014-12-04 | 2021-12-31 | Mks仪器有限公司 | Adaptive periodic waveform controller |
| US11367592B2 (en) | 2014-12-04 | 2022-06-21 | Mks Instruments, Inc. | Adaptive periodic waveform controller |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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