CN103780241A - TCCT match circuit for plasma etch chambers - Google Patents
TCCT match circuit for plasma etch chambers Download PDFInfo
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- CN103780241A CN103780241A CN201310503860.2A CN201310503860A CN103780241A CN 103780241 A CN103780241 A CN 103780241A CN 201310503860 A CN201310503860 A CN 201310503860A CN 103780241 A CN103780241 A CN 103780241A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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Abstract
The invention relates to a TCCT match circuit for plasma etch chambers, particularly to a match circuit. The match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.
Description
Priority request
The application requires to submit on December 31st, 2012 and is called the priority of the U.S. Provisional Application that the application number of " TCCT Match Circuit for Plasma Etch Chambers " is 61/747,919.The application is as being submitted on October 23rd, 2012 and to be called " Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coiling Zones " application number be 13/658, the partial continuous case of 652 U.S. Patent application requires priority, and this U.S. Patent application 13/658,652 as being submitted on August 4th, 2011 and to be called " Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and Outer TCP Coil " application number be 13/198, the partial continuous case of 683 U.S. Patent application requires priority, and this application 13/198,683 require to submit on April 28th, 2011 and to be called " Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and outer TCP Coil " application number be 61/480, the priority of 314 U.S. Provisional Patent Application.Whole disclosures of these applications are that all objects are incorporated in herein by reference.
Technical field
The present invention relates in general to semiconductor manufacture, and relates more particularly to the TCCT match circuit for plasma etch chamber.
Background technology
In semiconductor is manufactured, etch process is repeatedly implemented conventionally.As known to those skilled in the art, there is the etch process of two types: wet etching and dry etching.The dry etching of one type is the plasma etching that uses inductive coupling type plasma-etching apparatus to carry out.
Plasma comprises various types of free radicals and cation and anion.The chemical reaction of various free radicals, cation and anion is for feature, surface and the material of etched wafer.During etch processes, chamber coil carry out with transformer in the functionally similar function of primary coil, and plasma carry out with transformer in the functionally similar function of secondary coil.
The some problems of existing transformer coupled capacitor tuning (TCCT) coupling design suffers, especially in the time being used for electrodes of magnetoresistive random access memory (MRAM) to carry out manufacturing process.Problem comprises limited TCCT scope, limited transformer coupled plasma (TCP) power, high coil voltage and coil arc discharge.As a result, the processing window of reactor chamber can be extremely limited, means and can not adapt to various formulas.If the formula outside processing window is forced to operation, it may be because the interlocking of overvoltage and/or overcurrent is ended, and even worse, the destruction that can cause arc discharge and ceramic window and the ceramic cross (cross) of TPC coil.In addition, in the time that terminal voltage is not too balanced, because the splash effect of the ceramic window causing by the capacitive coupling of TCP coil can develop in time.Consequently, particle sputters from ceramic window, is deposited on subsequently on wafer, can cause production loss.This effect can be restricted to for example 500RF hours run by the operation lifetime of reactor.
In view of the foregoing, there is demand for the improved TCCT match circuit for plasma etch chamber.
Summary of the invention
Disclose a kind of for etching semiconductor substrate during semiconductor device manufacture and be formed in Semiconductor substrate layer device.This device is limited by TCCT match circuit, and it is controlled at the operation of the TCP coil of wherein carrying out etched plasma process chamber.
In one embodiment, provide the match circuit between a kind of RF of being coupling in source and plasma chamber, described match circuit comprises following part: power input circuit, described power input circuit and the coupling of RF source; Interior loop input circuit, it is coupling between described power input circuit and the input terminal of interior loop, the capacitor that described interior loop input circuit comprises inductor and is in series coupled with described inductor, described inductor is connected with power input circuit, and capacitor is connected with the input terminal of interior loop, first node is limited between power input circuit and interior loop input circuit; Interior loop output circuit, it is coupling between the lead-out terminal and ground of interior loop, and described interior loop output circuit limits with the direct perforation on ground and is connected; Exterior loop input circuit, it is coupling between first node and the input terminal of exterior loop; Exterior loop output circuit, it is coupling between the lead-out terminal and ground of exterior loop.
In one embodiment, capacitor is to have the variable capacitor to the value between about 1500pF at about 150pF; And described capacitor has at about 0.3uH to the value between about 0.5uH.
In one embodiment, exterior loop input circuit comprises the second capacitor.
In one embodiment, the second capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF.
In one embodiment, exterior loop output circuit comprises the second capacitor.In one embodiment, the second capacitor has at about 80pF to the value between about 120pF.In another embodiment, the second capacitor has the value of about 100pF+/-about 1%.
In one embodiment, power input circuit comprises: the second capacitor, and itself and RF source are coupled; The second inductor, itself and interior loop input circuit are coupled; The 3rd capacitor, it is coupling between the second capacitor and the second inductor, and Section Point is limited between the second capacitor and the 3rd capacitor; And the 4th capacitor, it is coupling between Section Point and ground.In one embodiment, the second capacitor has at about 5pF to the rated value between about 500pF; The 3rd capacitor has at about 50pF to the rated value between about 500pF; The second inductor has at about 0.3uH to the value between about 0.5uH; And the 4th capacitor has the value to about 300pF at about 200pF.In one embodiment, the 4th capacitor has the value of about 250pF+/-about 1%.
In another embodiment, provide a kind of match circuit, it comprises following part: power input circuit, described power input circuit and the coupling of RF source; Interior loop input circuit, it is coupling between power input circuit and the input terminal of interior loop, the first capacitor that interior loop input circuit comprises inductor and is in series coupled with described inductor, inductor is connected with power input circuit, and the first capacitor is connected with the input terminal of interior loop, first node is limited between power input circuit and interior loop input circuit; Interior loop output circuit, it is coupling between the lead-out terminal and ground of interior loop, and interior loop output circuit limits with the direct perforation on ground and is connected; Exterior loop input circuit, it is coupling between first node and the input terminal of exterior loop; Exterior loop output circuit, it is coupling between the lead-out terminal and ground of exterior loop, and described exterior loop output circuit comprises second capacitor with the value that is greater than about 100pF.
In one embodiment, the first capacitor is to have the variable capacitor to the value between about 1500pF at about 150pF; And inductor has at about 0.3uH to the value between about 0.5uH.
In one embodiment, exterior loop input circuit comprises the 3rd capacitor.In one embodiment, the 3rd capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF.
In one embodiment, power input circuit comprises: the 3rd capacitor, and itself and RF source are coupled; The second inductor, itself and interior loop input circuit are coupled; The 4th capacitor, it is coupling between the 3rd capacitor and the second inductor, and Section Point is limited between the 3rd capacitor and the 4th capacitor; And the 5th capacitor, it is coupling between Section Point and ground.In one embodiment, the 3rd capacitor has at about 5pF to the rated value between about 500pF; The 4th capacitor has at about 50pF to the rated value between about 500pF; The second inductor has at about 0.3uH to the value between about 0.5uH; And the 5th capacitor has about 200pF to the value between about 300pF.In one embodiment, the 5th capacitor has the value of about 250pF+/-about 1%.
In another embodiment, provide a kind of match circuit, it comprises following part: power input circuit, described power input circuit and the coupling of RF source; Interior loop input circuit, it is coupling between power input circuit and the input terminal of interior loop, the first capacitor that described interior loop input circuit comprises inductor and is in series coupled with described inductor, described inductor is connected with power input circuit, and described the first capacitor is connected with the input terminal of interior loop, first node is limited between power input circuit and interior loop input circuit; Interior loop output circuit, it is coupling between the lead-out terminal and ground of interior loop, and interior loop output circuit limits with the direct perforation on ground and is connected; Exterior loop input circuit, it is coupling between first node and the input terminal of exterior loop, and described exterior loop input circuit comprises the second capacitor; Exterior loop output circuit, it is coupling between the lead-out terminal and ground of exterior loop, and exterior loop output circuit comprises the 3rd capacitor.
In one embodiment, the first capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF; And wherein said inductor has at about 0.3uH to the value between about 0.5uH.
In one embodiment, the second capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF.
In one embodiment, the 3rd capacitor has at about 80pF to the value between about 120pF.In one embodiment, the 3rd capacitor has the value of about 100pF+/-about 1%.
In one embodiment, power input circuit comprises: the 4th capacitor, and itself and RF source are coupled; The second inductor, itself and interior loop input circuit are coupled; The 5th capacitor, it is coupling between the 4th capacitor and the second inductor, and Section Point is limited between the 4th capacitor and the 5th capacitor; And the 6th capacitor, it is coupling between Section Point and ground.In one embodiment, the 4th capacitor has at about 5pF to the rated value between about 500pF; Wherein said the 5th capacitor has at about 50pF to the rated value between about 500pF; The second inductor has at about 0.3uH to the value between about 0.5uH; And the 6th capacitor has at about 200pF to the value between about 300pF.In one embodiment, the 6th capacitor has the value of about 250pF+/-about 1%.
Accompanying drawing explanation
By the explanation with reference to providing below in conjunction with accompanying drawing, can understand best the present invention and further advantage thereof.
Fig. 1 shows the plasma process system for etching operation according to an embodiment of the invention.
Fig. 2 is the cutaway view of plasma process chamber according to an embodiment of the invention.
Fig. 3 shows vertical view according to an embodiment of the invention, schematically shows interior loop and exterior loop.
Fig. 4 A illustrates the schematic diagram of the circuit topological structure of TCCT match circuit according to an embodiment of the invention.
Fig. 4 B illustrates the rough schematic view of the parts of TCCT match circuit according to an embodiment of the invention.
Fig. 5 illustrates according to an embodiment of the invention for the ion concentration of various tops configuration and the graph of relation of TCP power.
Fig. 6 shows four curve charts of the relation that ion concentration and radial distance are shown respectively according to an embodiment of the invention.
Embodiment
A kind of TCCT match circuit is disclosed, its during semiconductor device manufacture for etching semiconductor substrate and be formed in Semiconductor substrate layer.The operation of TCCT match circuit control TCP coil, TCP coil is arranged in the top of the dielectric window of carrying out therein etched chamber.
In the following description, for complete understanding of the present invention is provided, multiple concrete details have been set forth.But, it will be apparent to one skilled in the art that and can implement the present invention in the case of not having some details in these details.In other example, for fear of unnecessarily making the present invention unclear, do not explain known processing operation and realize details.
Fig. 1 shows the plasma process system for etching operation according to an embodiment of the invention.This system comprises chamber 102 and dielectric window 106, and chamber 102 comprises chuck 104.Chuck 104 can be the electrostatic chuck for support substrates in the time that substrate exists.
Also show biasing RF generator 160, it can be limited by one or more generators.If multiple generators are provided, different frequencies can be used in and realizes various tuning characteristics.Offsets match device 162 is coupling in RF generator 160 and limits between the conductive plate of assembly of chuck 104.Chuck 104 also comprises the electrostatic attraction electrode that enables the clamping of wafer and remove clamping.In a broad aspect, can provide filter and DC clamp power supply.Can also be provided for promoting wafer other control system away from chuck 104.Although not shown, pump is connected to enable to carry out vacuum control and from chamber, remove gaseous by-product during operate plasma is processed with chamber 102.
In the time that these erection of equipments are in target manufacturing facility, these facilities connect with chamber 102.In addition, chamber 102 can connect with transfer chamber, and transfer chamber makes robot can utilize conventional automatic technology semiconductor wafer to be proceeded to and produced chamber 102.
Fig. 2 is the cutaway view of plasma process chamber according to an embodiment of the invention.TCP coil is shown as comprising interior loop (IC) 122 and exterior loop (OC) 120.TCP coil is placed and is arranged in the top of dielectric window 106.
The power that TCCT match circuit 124 enables offering interior loop and exterior loop carries out dynamic tuning.TCP coil and TCCT match circuit 124 are coupled, and TCCT match circuit 124 comprises and being connected of interior loop 120 and exterior loop 122.In one embodiment, TCCT match circuit 124 is configured to TCP coil to carry out tuning to provide to interior loop 122 than the more power of exterior loop 120.In another embodiment, TCCT match circuit 124 is configured to TCP coil to carry out tuning to provide than exterior loop 120 power still less to interior loop 122.In another embodiment, the power that offers interior loop and exterior loop will provide uniform power to distribute and/or control the ion concentration in the radial distribution of substrate (, wafer, in the time existing) top.In another embodiment, regulate the intensity tuning between exterior loop and interior loop by being based upon the processing parameter limiting being arranged in the semiconductor wafer execution etching on chuck 104.
In one implementation, the TCCT match circuit (as discussed in more detail below) that has a variable capacitor can be configured to automatically regulate to realize predetermined current ratio in two coils.Should be appreciated that illustrated circuit provides expecting the tuning of current ratio and regulating herein.In one embodiment, the scope of current ratio can be between 0.1 to 1.5.Conventionally, this ratio is called as transformer coupled capacitor tuning (TCCT) ratio.But the setting of TCCT ratio is based on for the desired processing of one or more specific wafers.
Should be appreciated that by tunable TCP coil is provided, chamber 102 can provide according to the processing that will carry out and operate to control the relation of ion concentration and TCP power and the flexibility that radial ion density distributes.
In addition, although it should be noted in the discussion above that be called TCCT match circuit in the disclosure, the use of this term should not limit to be restricted to and realize the matching feature of expecting and the scope of tuning circuit is provided.What can conceive in other embodiments, is to can be used in and realize for not having TCCT function or having the expectation matching feature of the plasma process system of fixing TCCT ratio according to the match circuit of principle described herein and embodiment.
Fig. 3 shows vertical view according to an embodiment of the invention, and it schematically shows interior loop 122 and exterior loop 120.Shown vertical view represents and being connected of the described coil that comprises exterior loop 120 and interior loop 122 as an example before.Interior loop 122 comprises interior loop 1(IC
1) and interior loop 2(IC
2).Exterior loop 120 comprises exterior loop 1(OC
1) and exterior loop 2(OC
2).Connection between coil-end illustrates with respect to the circuit arranging in TCCT match circuit 124.Provide diagram in Fig. 3 to show the each circular winding being associated in interior loop and the exterior loop of the TCP coil with using according to an embodiment of the invention in chamber 102.As shown in the figure, interior loop IC
1and IC
2be set to parallel spiral shape part interlaced with each other.As shown in the figure, IC
1and IC
2be similar to a pair of arithmetic or the spiral of Archimedes of basic identical shape, but one is rotated about 180 degree with respect to another around its axis.IC
1input terminal 300 and IC
2input terminal 302 location completely relatively.In addition, IC
1lead-out terminal 304 and IC
2lead-out terminal 306 location completely relatively.Exterior loop OC
1and OC
2structure and interior loop IC
1and IC
2similar, define similar parallel spiral shape substantially interlaced with each other, and approximate 180 degree of rotation relative to each other.OC
1input terminal 308 and OC
2input terminal 310 completely relatively, and OC
1lead-out terminal 312 and OC
2lead-out terminal 314 completely relatively.In one embodiment, the input and output terminal of interior loop and exterior loop is arranged with the structure of substantial linear.Should be understood that, the coil structure of other type gap is possible.For example, can there is the dimension coil that dome structure and other coil-type structure except smooth coil distributes are provided.
Mention, TCP coil and TCCT match circuit 124 are coupled, and TCCT match circuit 124 comprises and being connected of interior loop 120 and exterior loop 122.As shown in the figure, the input terminal 308 of exterior loop 120 and 310 and node 146 be coupled, node 146 and then be connected with TCCT input circuit 320.The lead-out terminal of exterior loop 120 is connected with node 142, and node 142 is connected with TCCT output circuit 324.Interior loop 122 makes its input terminal 300 be connected with node 140 with 302, and 140 of nodes are connected with TCCT input circuit 320.The lead-out terminal 304 of interior loop 122 is connected with node 148 with 306, and node 148 is connected with TCCT output circuit 324.TCCT input circuit receives the power from RF power source 322.TCCT output circuit ground connection.
Fig. 4 A illustrates the schematic diagram of the circuit topological structure of TCCT match circuit according to an embodiment of the invention.RF source 322 provides power to power input circuit 400.Variable capacitor C
1be coupling between RF source 322 and node 410.Node 410 and capacitor C
2connect capacitor C
2and then ground connection.Node 410 also with variable capacitor C
3connect variable capacitor C
3and then with inductor L
5connect.Inductor L
5be coupled with node 412.In one embodiment, power input circuit 400 is by variable capacitor C
1, node 410, ground connection capacitor C
2, variable capacitor C
3with inductor L
5limit, they are arranged by the mode of having described.
Each coupling in node 412 and interior loop input circuit 402 and exterior loop input circuit 404.In one embodiment, interior loop input circuit 402 is by inductor L coupled to each other
3with variable capacitor C
5limit.Inductor L
3be coupling in node 412 and variable capacitor C
5between.Variable capacitor C
5be connected (shown in Figure 3) with node 140, node 140 and then be connected with the input terminal of interior loop.
Continue with reference to Fig. 4 A, node 412 is also connected with exterior loop input circuit 404.In one embodiment, exterior loop input circuit 404 is by the variable capacitor C being coupled with node 412
4limit.Variable capacitor C
4also be connected (shown in Figure 3) with node 146, node 146 and then be connected with the input terminal of exterior loop.
In one embodiment, variable capacitor C
1be rated between about 5pF to 500pF.In one embodiment, variable capacitor C
2be rated for about 250pF.In one embodiment, variable capacitor C
3be decided to be approximately between 5pF to 500pF.In one embodiment, inductor L
5be rated for about 0.3uH.In one embodiment, variable capacitor C
4be rated between about 150pF to 1500pF.In one embodiment, inductor L
3be rated for about 0.55uH.In one embodiment, variable capacitor C
5be rated between about 150pF to 1500pF.In one embodiment, capacitor C
7be rated for about 100pF.
The tuning variable capacitor C of TCCT match circuit 124 enables dynamic
1, C
3, C
4and C
5with the tuning power that offers interior loop and exterior loop.In one embodiment, control variable capacitor C by the processing controller being connected with the electron plate of chamber 102
1, C
3, C
4and C
5.Electron plate can be coupled with networked system, and networked system will operate concrete processing routine according to desired processing in concrete circulation.Therefore, electron plate can be controlled at the etching operation of carrying out in chamber 102, and controls variable capacitor C
1, C
3, C
4and C
5concrete setting.
Fig. 4 B is the rough schematic view of the parts of diagram TCCT match circuit according to an embodiment of the invention.As shown in the figure, power input circuit 400 receives the power from RF power source 322.Power input circuit 400 is connected with node 412.Interior loop input circuit 402 is coupling between node 412 and interior loop 122.Exterior loop input circuit 404 is coupling between node 412 and exterior loop 120.Interior loop 122 is connected with the interior loop output circuit 406 of ground connection.Exterior loop 120 is connected with the exterior loop output circuit 408 of ground connection.
In a broad aspect, current described TCCT match circuit design has realized the raising of power efficiency.This is presumably because design optimization and make parasitic capacitance on coil minimize to realize for the impact of plasma." Power Efficiency Oriented Optimal Design of High Density CCP and ICP Sources for Semiconductor RF Plasma Processing Equipment " (the IEEE Transaction on Plasma Science delivering at the Maolin Long that is incorporated in by reference this paper, in April, 2006, the 34th the 2nd phase of volume) in research and described the impact of parasitic capacitance on RF power efficiency.
About interior loop, existing TCCT match circuit design has comprised outlet side inductor, and it has increased parasitic capacitance and has therefore reduced power efficiency.But in embodiment provided herein, interior loop output circuit is configured to connect ground connection, and interior loop input circuit is configured to comprise inductor L
3.This has reduced parasitic capacitance, has therefore improved power efficiency and has been conducive to the low voltage in interior loop.
About exterior loop, existing TCCT match circuit design provides relatively low outlet side electric capacity.But in embodiment provided herein, exterior loop output circuit is configured to the electric capacity that provides higher, this has reduced impedance and lower voltage drop is provided for set frequency.
The table 1 below illustrating provides RF performance data according to an embodiment of the invention, and it compares original top RF design and modification top RF design.
Table 1
As the data in table 1 are shown, for revising top, in non-loaded (without plasma) situation, the Q value of interior loop increases than original top.Therefore, RF power efficiency has also improved.Therefore,, under immunization with gD DNA vaccine, under higher TCCT, improved total Q value of TCP coil, because exterior loop is preponderated under lower TCCT.In addition, data show, it is significant that the total RF power efficiency in load (having plasma) situation improves.
In a broad aspect, current disclosed TCCT match circuit provides high power efficiency, represents for set quantity of power, has obtained more highdensity plasma.In addition,, by realizing high power efficiency, disclosed TCCT match circuit allows the voltage level at coil terminals place relatively low.The ability of moving under coil terminals place low voltage has reduced the acceleration of the surperficial ion that can clash into dielectric window.Consequently having reduced the particle causing due to the sputter of the particle from dielectric window generates.Table 2 below shows existing TCCT match circuit design and the comparison of the terminal voltage between the design of TCCT match circuit according to an embodiment of the invention.
Table 2
Data in table 2 show according to an embodiment of the invention the RF voltage ratio recording between TCCT match circuit and existing TCCT match circuit.At variable capacitor C
5and measuring voltage V between node 140
3(shown in Fig. 4 A), and this voltage V
3represent the voltage at the input terminal place of interior loop.At lead-out terminal and the capacitor C of exterior loop
7between measuring voltage V
4(also shown in Fig. 4 A), and this voltage V
4be illustrated in the voltage at the lead-out terminal place of exterior loop.
Data as shown in table 2 show, having reduced significantly coil terminals voltage in the design of TCCT match circuit according to an embodiment of the invention.Because coil terminals lower voltage, so embodiments of the invention can use to make dielectric window sputter minimize and eliminate the coil arc discharge being caused by terminal-ground overvoltage in various conductor etching chambers.
Fig. 5 illustrates according to an embodiment of the invention for the ion concentration of various tip configuration and the graph of relation of TCP power.In curve chart, represent the drawing for different tip configuration by different shapes.Circle is corresponding to the drawing on original top in coil-window gap with 0.1 inch.Experiment condition is as follows: TCCT=1, SF6=50sccm, Ar=200sccm, Ch.P=9mT, tip=160mm.Rhombus is corresponding to having according to the TCCT match circuit of embodiment described herein and having the drawing on the modification top in coil-window gap of 0.1 inch.The square drawing on original top in coil-window gap corresponding to thering is 0.4 inch.Triangle correspondence has the drawing on the original top in coil-window gap of 0.4 inch in not having Faraday shield.
The drawing (being represented by circle) on original top in coil-window gap with 0.1 inch is compared with the drawing (being represented by rhombus) on modification top with 0.1 inch of coil-window gap, can find out, revising top RF design provides than significantly high power efficiency of original top RF design.That is to say, for set TCP power, revise top significantly higher ion concentration is provided.By larger power efficiency is provided, but with lower-wattage, can realize with existing top TCCT and mate the plasma density that designs equivalent.This function provides the life-span of the raising of TCCT match circuit, because parts are subject to the effect of lower-wattage, and has reduced the generation of the particle because of dielectric window sputter as described above.
Fig. 6 shows four curve charts, shows respectively the relation of ion concentration and radial distance.In the curve chart shown in the upper right side of Fig. 6, show the drawing of the various TCCT values on the original top that is applied to coil-window gap with 0.1 inch.For each drawing, TCP power=1000W.The drawing being represented by rhombus is corresponding to TCCT=1.By the drawing of square expression corresponding to TCCT=0.5.The drawing being represented by triangle is corresponding to TCCT=1.3.
In the curve chart shown in the upper left side of Fig. 6, show and be applied to the drawing that there is TCCT match circuit according to an embodiment of the invention and there are the various TCCT values on the modification top in coil-window gap of 0.1 inch.For each drawing, TCP power=1000W.The drawing being represented by rhombus is corresponding to TCCT=1.By the drawing of square expression corresponding to TCCT=0.5.The drawing being represented by triangle is corresponding to TCCT=1.3.
In the curve chart shown in the lower right of Fig. 6, show the drawing of the various TCCT values on the original top that is applied to coil-window gap with 0.4 inch.The drawing being represented by rhombus is corresponding to TCCT=1.By the drawing of square expression corresponding to TCCT=0.5.The drawing being represented by triangle is corresponding to TCCT=1.3.
In the curve chart shown in the lower left of Fig. 6, show and be applied to the drawing that does not there is Faraday shield but there are the various TCCT values on the benchmark top in coil-window gap of 0.4 inch.The drawing being represented by rhombus is corresponding to TCCT=1.By the drawing of square expression corresponding to TCCT=0.5.The drawing being represented by triangle is corresponding to TCCT=1.3.
Plot exhibits shown in Fig. 6, distributes on whole wafer more equably owing to being incorporated to the plasma density that TCCT match circuit obtains according to an embodiment of the invention.
Although describe the present invention according to multiple embodiment, it should be understood that those skilled in the art will recognize various change of the present invention, interpolation, displacement and equivalent after reading specification above and studying accompanying drawing.Therefore, the invention is intended to be to comprise all such change, interpolation, displacement and the equivalent that drop in true spirit of the present invention and scope.
Claims (20)
1. be coupling in the match circuit between RF source and plasma chamber, described match circuit comprises:
Power input circuit, described power input circuit and the coupling of RF source;
Interior loop input circuit, it is coupling between described power input circuit and the input terminal of interior loop, the capacitor that described interior loop input circuit comprises inductor and is in series coupled with described inductor, described inductor is connected to described power input circuit, and described capacitor is connected to the described input terminal of described interior loop, first node is limited between described power input circuit and described interior loop input circuit;
Interior loop output circuit, it is coupling between the lead-out terminal and ground of described interior loop, and described interior loop output circuit limits with the direct perforation on ground and is connected;
Exterior loop input circuit, it is coupling between described first node and the input terminal of exterior loop;
Exterior loop output circuit, it is coupling between the lead-out terminal and ground of described exterior loop.
2. match circuit as claimed in claim 1,
Wherein said capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF; And
And described inductor has at about 0.3uH to the value between about 0.5uH.
3. match circuit as claimed in claim 1, wherein said exterior loop input circuit comprises the second capacitor.
4. match circuit as claimed in claim 3, wherein said the second capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF.
5. match circuit as claimed in claim 1, wherein said exterior loop output circuit comprises the second capacitor.
6. match circuit as claimed in claim 5, wherein said the second capacitor has at about 80pF to the value between about 120pF.
7. match circuit as claimed in claim 1, wherein said power input circuit comprises: the second capacitor, itself and described RF source are coupled; The second inductor, itself and described interior loop input circuit are coupled; The 3rd capacitor, it is coupling between described the second capacitor and described the second inductor; Section Point, it is limited between described the second capacitor and described the 3rd capacitor; And the 4th capacitor, it is coupling between described Section Point and ground.
8. match circuit as claimed in claim 7,
Wherein said the second capacitor has at about 5pF to the rated value between about 500pF;
Wherein said the 3rd capacitor has at about 50pF to the rated value between about 500pF;
Wherein said the second inductor has at about 0.3uH to the value between about 0.5uH;
Wherein said the 4th capacitor has at about 200pF to the value between about 300pF.
9. a match circuit, it comprises:
Power input circuit, described power input circuit and the coupling of RF source;
Interior loop input circuit, it is coupling between described power input circuit and the input terminal of interior loop, the first capacitor that described interior loop input circuit comprises inductor and is in series coupled with described inductor, described inductor is connected with described power input circuit, and described the first capacitor is connected with the described input terminal of described interior loop, first node is limited between described power input circuit and described interior loop input circuit;
Interior loop output circuit, it is coupling between the lead-out terminal and ground of described interior loop, and described interior loop output circuit limits with the direct perforation on ground and is connected;
Exterior loop input circuit, it is coupling between described first node and the input terminal of exterior loop;
Exterior loop output circuit, it is coupling between the lead-out terminal and ground of described exterior loop, and described exterior loop output circuit comprises second capacitor with the value that is greater than 85pF.
10. match circuit as claimed in claim 9,
Wherein said the first capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF; And
Wherein said inductor has at about 0.3uH to the value between about 0.5uH.
11. match circuits as claimed in claim 9, wherein said exterior loop input circuit comprises the 3rd capacitor.
12. match circuits as claimed in claim 11, wherein said the 3rd capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF.
13. match circuits as claimed in claim 9, wherein said power input circuit comprises: the 3rd capacitor, itself and described RF source are coupled; The second inductor, itself and described interior loop input circuit are coupled; The 4th capacitor, it is coupling between described the 3rd capacitor and described the second inductor; Section Point, it is limited between described the 3rd capacitor and described the 4th capacitor; And the 5th capacitor, it is coupling between described Section Point and ground.
14. match circuits as claimed in claim 13,
Wherein said the 3rd capacitor has at about 5pF to the rated value between about 500pF;
Wherein said the 4th capacitor has at about 50pF to the rated value between about 500pF;
Wherein said the second inductor has at about 0.3uH to the value between about 0.5uH;
Wherein said the 5th capacitor has at about 200pF to the value between about 300pF.
15. 1 kinds of match circuits, comprising:
Power input circuit, described power input circuit and the coupling of RF source;
Interior loop input circuit, it is coupling between described power input circuit and the input terminal of interior loop, the first capacitor that described interior loop input circuit comprises inductor and is in series coupled with described inductor, described inductor is connected with described power input circuit, and described the first capacitor is connected with the described input terminal of described interior loop, first node is limited between described power input circuit and described interior loop input circuit;
Interior loop output circuit, it is coupling between the lead-out terminal and ground of described interior loop, and described interior loop output circuit limits with the direct perforation on ground and is connected;
Exterior loop input circuit, it is coupling between described first node and the input terminal of exterior loop, and described exterior loop input circuit comprises the second capacitor;
Exterior loop output circuit, it is coupling between the lead-out terminal and ground of described exterior loop, and described exterior loop output circuit comprises the 3rd capacitor.
16. match circuits as claimed in claim 15,
Wherein said the first capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF; And
Wherein said capacitor has at about 0.3uH to the value between about 0.5uH.
17. match circuits as claimed in claim 15, wherein said the second capacitor is to have the variable capacitor to the rated value between about 1500pF at about 150pF.
18. match circuits as claimed in claim 15, wherein said the 3rd capacitor has at about 80pF to the value between about 120pF.
19. match circuits as claimed in claim 15, wherein said power input circuit comprises: the 4th capacitor, itself and described RF source are coupled; The second inductor, itself and described interior loop input circuit are coupled; The 5th capacitor, it is coupling between described the 4th capacitor and described the second inductor; Section Point, it is limited between described the 4th capacitor and described the 5th capacitor; And the 6th capacitor, it is coupling between described Section Point and ground.
20. match circuits as claimed in claim 19,
Wherein said the 4th capacitor has at about 5pF to the rated value between about 500pF;
Wherein said the 5th capacitor has at about 50pF to the rated value between about 500pF;
Wherein said the second inductor has at about 0.3uH to the value between about 0.5uH;
Wherein said the 6th capacitor has at about 200pF to the value between about 300pF.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/658,652 US9293353B2 (en) | 2011-04-28 | 2012-10-23 | Faraday shield having plasma density decoupling structure between TCP coil zones |
| US13/658,652 | 2012-10-23 | ||
| US201261747919P | 2012-12-31 | 2012-12-31 | |
| US61/747,919 | 2012-12-31 | ||
| US13/751,001 US9059678B2 (en) | 2011-04-28 | 2013-01-25 | TCCT match circuit for plasma etch chambers |
| US13/751,001 | 2013-01-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103780241A true CN103780241A (en) | 2014-05-07 |
| CN103780241B CN103780241B (en) | 2017-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310503860.2A Active CN103780241B (en) | 2012-10-23 | 2013-10-23 | TCCT match circuit for plasma etch chambers |
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| Country | Link |
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| JP (1) | JP6289860B2 (en) |
| KR (1) | KR102031381B1 (en) |
| CN (1) | CN103780241B (en) |
| TW (2) | TWI650796B (en) |
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| US9515633B1 (en) * | 2016-01-11 | 2016-12-06 | Lam Research Corporation | Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers |
| CN110536533A (en) * | 2018-06-07 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Upper electrode system, plasma chamber and method of generating plasma |
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Also Published As
| Publication number | Publication date |
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| TWI606482B (en) | 2017-11-21 |
| JP6289860B2 (en) | 2018-03-07 |
| TW201432776A (en) | 2014-08-16 |
| JP2014089957A (en) | 2014-05-15 |
| KR102031381B1 (en) | 2019-11-08 |
| KR20140051808A (en) | 2014-05-02 |
| TW201740427A (en) | 2017-11-16 |
| CN103780241B (en) | 2017-04-12 |
| TWI650796B (en) | 2019-02-11 |
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