CN113972125B - Plasma processing system and multi-section Faraday shielding device thereof - Google Patents
Plasma processing system and multi-section Faraday shielding device thereof Download PDFInfo
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- CN113972125B CN113972125B CN202010725037.6A CN202010725037A CN113972125B CN 113972125 B CN113972125 B CN 113972125B CN 202010725037 A CN202010725037 A CN 202010725037A CN 113972125 B CN113972125 B CN 113972125B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a plasma processing system and a multi-section Faraday shielding device thereof, comprising a conducting ring and a plurality of conducting petal-shaped components which are symmetrically arranged at the periphery of the conducting ring in a radiation manner; each conductive petal-shaped component comprises a plurality of sections of conductive plates and a plurality of connecting capacitors; the multiple sections of conducting plates of each conducting petal-shaped assembly are arranged at intervals along the radial direction; a connecting capacitor is arranged between every two adjacent conductive plates; each connecting capacitor comprises an upper electrode plate and a lower electrode plate; the lower end face of the upper electrode plate and/or the upper end face of the lower electrode plate are/is provided with an insulating coating; the lower end face of the upper electrode plate is connected with the upper end face of the lower electrode plate; the upper electrode plate is conductively connected to one of the two adjacent conductive plates; the lower electrode plate is conductively connected to the other conductive plate in the two adjacent conductive plates; the plurality of conductive plates are located on the same plane. The invention has low processing cost and simple and convenient installation and positioning mode, and does not occupy the space in the vertical direction compared with the existing multi-section Faraday shielding device.
Description
Technical Field
The invention belongs to the technical field of semiconductor etching, and particularly relates to a plasma processing system and a multi-section Faraday shielding device thereof.
Background
Patent document CN110491760A discloses a faraday cleaning apparatus and a plasma processing system, as shown in fig. 11, comprising a reaction chamber 3 and a radio frequency coil 4; a dielectric window 301 is arranged above the reaction chamber 3; a nozzle is arranged in the middle of the medium window 301; a lower electrode 6 for placing a wafer 7 is arranged in the reaction chamber 3. The plasma processing system further comprises a faraday shield apparatus 201; the faraday shield 201 is disposed on the dielectric window 301. The radio frequency coil 4 is disposed on the faraday shield apparatus 201.
In the patent, Faraday sections are connected by capacitors, so that radio frequency tends to be uniformly distributed in the whole dielectric window, and the whole bottom surface of the dielectric window tends to be uniformly cleaned; the cleaning device is used for solving the problem that the integrated Faraday plate can thoroughly clean the upper outer edge area and the middle area of the coupling window at the top of the cavity, and the cleaning is not thorough enough.
But the existence of the capacitance connection increases the occupied space of the Faraday structure, the upper surface is uneven, and the installation difficulty of the radio frequency coil is increased; in addition, the difficulty in mounting and positioning the Faraday plate and the capacitor is high; and the required thickness of the dielectric layer of the capacitor can reach the level lower than 0.1mm, and the manufacturing cost is high.
Disclosure of Invention
In order to solve the above problems, the present invention provides a plasma processing system and a multi-sectional faraday shield apparatus thereof, which has low processing cost and simple installation and positioning manner, and does not occupy a vertical space compared to the conventional multi-sectional faraday shield apparatus.
The technical scheme is as follows: the invention provides a multi-section Faraday shielding device of a plasma processing system, which comprises a conducting ring and a plurality of conducting petal-shaped components, wherein the conducting petal-shaped components are radially and symmetrically arranged on the periphery of the conducting ring; each conductive petal-shaped assembly comprises a plurality of sections of conductive plates and a plurality of connecting capacitors; the multiple sections of conducting plates of each conducting petal-shaped assembly are arranged at intervals along the radial direction; a connecting capacitor is arranged between every two adjacent conductive plates; each connecting capacitor comprises an upper electrode plate and a lower electrode plate; the lower end face of the upper electrode plate and/or the upper end face of the lower electrode plate are/is provided with an insulating coating; the upper electrode plate and the lower electrode plate are parallel to the conductive plate; the lower end face of the upper electrode plate is connected with the upper end face of the lower electrode plate; the upper electrode plate is conductively connected to one of the two adjacent conductive plates; the lower electrode plate is conductively connected to the other conductive plate in the two adjacent conductive plates; the conductive plates are located on the same plane.
Further, the upper end surface of the upper electrode plate is not higher than the upper end surface of the conductive plate; the lower end face of the lower electrode plate is not lower than the lower end face of the conductive plate.
Further, the upper electrode plate and the lower electrode plate are fixedly bonded.
Furthermore, the outer edges of the side walls of the upper electrode plate and the lower electrode plate are fixedly bonded through colloid.
A plasma processing system comprises the Faraday shielding apparatus.
Further, the plasma processing system further comprises a reaction chamber; a medium window is arranged above the reaction chamber; the Faraday shielding device is arranged on the medium window.
Further, the plasma processing system further comprises a radio frequency coil; the radio frequency coil is disposed on the faraday shield apparatus.
Has the advantages that: the upper electrode plate and the lower electrode plate of the connecting capacitor are integrally processed and manufactured with the conductive plate, and the upper electrode plate and the lower electrode plate are also integrally processed with the dielectric layer, so that the processing cost is low compared with the conventional multi-section Faraday shielding device; the mounting and positioning mode of the Faraday plate and the connecting capacitor is simple and convenient, so that the multi-section of the Faraday plate is simple; compared with the existing multi-section Faraday shielding device, the device does not occupy the space in the vertical direction; and the upper surface of the faraday shield is in a plane, the location and number of segments is no longer limited by the associated rf coil and dielectric window.
Drawings
FIG. 1 is a schematic diagram of a structure of two conductive plates and a connecting capacitor according to the present invention;
FIG. 2 is a top view of the Faraday shielding apparatus of the present invention;
FIG. 3 is a schematic view of a Faraday shielding apparatus with two segments of conductive plates according to the present invention;
FIG. 4 is a graph of voltage distribution for a Faraday shielding apparatus having two sections of conductive plates according to the present invention;
FIG. 5 is a schematic structural view of a Faraday shielding apparatus having three conductive plates according to the present invention;
FIG. 6 is a graph of voltage distribution for a Faraday shielding apparatus having three conductive plates according to the present invention;
FIG. 7 is a schematic diagram of a Faraday shielding apparatus with five segments of conductive plates according to the present invention;
FIG. 8 is a graph of voltage distribution for a Faraday shielding apparatus having five segments of conductive plates according to the present invention;
fig. 9 is a schematic structural view of a conventional integrated faraday shield apparatus;
fig. 10 is a graph of voltage distribution of a conventional integrated faraday shield apparatus;
fig. 11 is a schematic configuration diagram of a conventional plasma processing system.
Detailed Description
As shown in fig. 1 and fig. 2, the present invention provides a multi-sectional faraday shielding apparatus of a plasma processing system, which includes a conductive ring 1 and a plurality of conductive petal-shaped components radially and symmetrically disposed on the periphery of the conductive ring 1; each conductive petal assembly comprises a plurality of sections of conductive plates 201 and a plurality of connecting capacitors 202; the multiple sections of conductive plates 201 of each conductive petal-shaped assembly are arranged at intervals along the radial direction; a connecting capacitor 202 is arranged between each two adjacent conductive plates 201. The plurality of conductive plates 201 are located on the same plane.
Each connection capacitor 202 includes an upper electrode plate 2021 and a lower electrode plate 2022; the upper electrode plate 2021 and the lower electrode plate 2022 are both parallel to the conductive plate 201; and the lower end face of the upper electrode plate 2021 is connected to the upper end face of the lower electrode plate 2022.
The upper electrode plate 2021 is conductively connected to one conductive plate 201 of the two adjacent conductive plates 201; the lower electrode plate 2022 is conductively connected to the other conductive plate 201 of the two adjacent conductive plates 201.
The processing method of the upper electrode plate 2021 and the conductive plate 201 is as follows: and milling a part of the metal plate to be half or slightly less than half of the original thickness by using a milling machine, wherein the milled part is used as an upper electrode plate 2021, and the rest part is the conductive plate 201. The upper electrode plate 2021 formed by the above-described processing method is integrally connected to the conductive plate 201, and the processing cost is low.
The lower electrode plate 2022 is processed in the same manner as the conductive plate 201.
And arranging an insulating coating on the lower end face of the upper electrode plate 2021 and/or the upper end face of the lower electrode plate 2022. Specifically, the insulating coating may be formed by spraying a material such as PTFE or Y2O3, or may be an oxide layer formed by anodic oxidation or natural color oxidation. The insulating coating serves as a dielectric layer between the upper electrode plate 2021 and the lower electrode plate 2022. The oxide layer degree of depth is controllable, and thickness can accomplish 5um ~200 um.
Then, the lower end face of the upper electrode plate 2021 is connected to the upper end face of the lower electrode plate 2022, and the upper end face of the upper electrode plate 2021 is not higher than the upper end face of the conductive plate 201; the lower end surface of the lower electrode plate 2022 is not lower than the lower end surface of the conductive plate 201.
The outer edges of the side walls of the upper electrode plate 2021 and the lower electrode plate 2022 are fixed by adhesive.
A plasma processing system comprises a reaction chamber 3 and a radio frequency coil 4; a medium window 301 is arranged above the reaction chamber 3; a nozzle is arranged in the middle of the medium window 301; a lower electrode 6 for placing a wafer 7 is arranged in the reaction chamber 3.
The plasma processing system also includes the faraday shield apparatus described above; the faraday shield arrangement is also positioned over the dielectric window 301. The radio frequency coil 4 is positioned on the faraday shield apparatus.
FIG. 4 is a graph of voltage distribution for a Faraday shielding apparatus having two sections of conductive plates according to the present invention; FIG. 6 is a graph of voltage distribution for a Faraday shielding apparatus having three conductive plates according to the present invention; FIG. 8 is a graph of voltage distribution for a Faraday shielding apparatus having five segments of conductive plates according to the present invention; fig. 10 is a graph of voltage distribution of a conventional integrated faraday shield apparatus; wherein the far point O is the center of the Faraday shielding device, the abscissa is the distance from the point O, and the ordinate is the corresponding voltage value.
As can be seen from the comparison of the above figures, the voltage distribution of the integrated faraday shielding device is concentrated at the edge of the dielectric window 301 in the dielectric window 301, and the voltage distribution tends to be uniform as the number of the conductive plates 201 increases, so that the cleaning of the entire bottom surface of the dielectric window 301 tends to be uniform.
In the invention, the upper electrode plate 2021 and the lower electrode plate 2022 connected with the capacitor are integrally processed with the conductive plate 201, and the upper electrode plate 2021 and the lower electrode plate 2022 are also integrally processed with the dielectric layer, so that compared with the existing multi-section Faraday shielding device, the processing cost is low; the mounting and positioning mode of the Faraday plate and the connecting capacitor is simple and convenient, so that the multi-section of the Faraday plate is simple; compared with the existing multi-section Faraday shielding device, the device does not occupy the space in the vertical direction; and the upper surface of the faraday shield is in a plane, the position and number of segments is no longer limited by the associated rf coil 4 and dielectric window 301.
Claims (7)
1. A multi-section Faraday shielding device of a plasma processing system comprises a conducting ring (1) and a plurality of conducting petal-shaped components which are radially and symmetrically arranged on the periphery of the conducting ring (1); each conductive petal assembly comprises a plurality of sections of conductive plates (201) and a plurality of connecting capacitors (202); the multiple sections of conductive plates (201) of each conductive petal-shaped assembly are arranged at intervals along the radial direction; a connecting capacitor (202) is arranged between every two adjacent conductive plates (201); the method is characterized in that: each connecting capacitor (202) comprises an upper electrode plate (2021) and a lower electrode plate (2022); the lower end face of the upper electrode plate (2021) and/or the upper end face of the lower electrode plate (2022) are/is provided with an insulating coating; the upper electrode plate (2021) and the lower electrode plate (2022) are both parallel to the conductive plate (201); the lower end face of the upper electrode plate (2021) is connected with the upper end face of the lower electrode plate (2022); the upper electrode plate (2021) is conductively connected to one conductive plate (201) of the two adjacent conductive plates (201); the lower electrode plate (2022) is conductively connected to the other conductive plate (201) of the two adjacent conductive plates (201); the conductive plates (201) are located on the same plane.
2. The multi-sectional faraday shield apparatus of claim 1, wherein: the upper end face of the upper electrode plate (2021) is not higher than the upper end face of the conductive plate (201); the lower end face of the lower electrode plate (2022) is not lower than the lower end face of the conductive plate (201).
3. The multi-sectional faraday shield apparatus of claim 1, wherein: the upper electrode plate (2021) and the lower electrode plate (2022) are fixedly bonded.
4. The multi-sectional faraday shield apparatus of claim 3, wherein: the outer edges of the side walls of the upper electrode plate (2021) and the lower electrode plate (2022) are fixedly bonded through glue.
5. A plasma processing system, characterized by: comprising the faraday shield arrangement of any one of claims 1 to 4.
6. The plasma processing system of claim 5, wherein: further comprising a reaction chamber (3); a medium window (301) is arranged above the reaction chamber (3); the Faraday shielding device is placed on the dielectric window (301).
7. The plasma processing system of claim 6, wherein: further comprising a radio frequency coil (4); the radio frequency coil (4) is arranged on the Faraday shielding device.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010725037.6A CN113972125B (en) | 2020-07-24 | 2020-07-24 | Plasma processing system and multi-section Faraday shielding device thereof |
| US18/006,485 US20230274918A1 (en) | 2020-07-24 | 2021-06-17 | Plasma processing system and multi-section faraday shielding device thereof |
| PCT/CN2021/100681 WO2022017089A1 (en) | 2020-07-24 | 2021-06-17 | Plasma processing system and multi-section faraday shielding device thereof |
| KR1020237005736A KR20230038793A (en) | 2020-07-24 | 2021-06-17 | Plasma treatment system and its multi-section Faraday shield |
| JP2023504635A JP7462369B2 (en) | 2020-07-24 | 2021-06-17 | Plasma processing system and multi-stage faraday shield device thereof |
| TW110126599A TWI790687B (en) | 2020-07-24 | 2021-07-20 | Plasma processing system and multi-segment faraday shielding device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010725037.6A CN113972125B (en) | 2020-07-24 | 2020-07-24 | Plasma processing system and multi-section Faraday shielding device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113972125A CN113972125A (en) | 2022-01-25 |
| CN113972125B true CN113972125B (en) | 2022-07-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010725037.6A Active CN113972125B (en) | 2020-07-24 | 2020-07-24 | Plasma processing system and multi-section Faraday shielding device thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230274918A1 (en) |
| JP (1) | JP7462369B2 (en) |
| KR (1) | KR20230038793A (en) |
| CN (1) | CN113972125B (en) |
| TW (1) | TWI790687B (en) |
| WO (1) | WO2022017089A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159660A (en) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Ind Co Ltd | Plasma etching apparatus |
| CN102543636A (en) * | 2010-12-27 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing equipment |
| JP2012185975A (en) * | 2011-03-04 | 2012-09-27 | Shibaura Mechatronics Corp | Plasma processing device and plasma processing method |
| CN103780241A (en) * | 2012-10-23 | 2014-05-07 | 朗姆研究公司 | TCCT match circuit for plasma etch chambers |
| CN110491760A (en) * | 2019-08-23 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of faraday's cleaning device and plasma process system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6685799B2 (en) * | 2001-03-14 | 2004-02-03 | Applied Materials Inc. | Variable efficiency faraday shield |
| JP2006216903A (en) * | 2005-02-07 | 2006-08-17 | Hitachi High-Technologies Corp | Plasma processing unit |
| JP2008288437A (en) | 2007-05-18 | 2008-11-27 | Toshiba Corp | Plasma processing apparatus and plasma processing method |
| US9490106B2 (en) * | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
| JP5856791B2 (en) * | 2011-10-05 | 2016-02-10 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| US9767996B2 (en) * | 2015-08-21 | 2017-09-19 | Lam Research Corporation | Application of powered electrostatic faraday shield to recondition dielectric window in ICP plasmas |
| CN111081524B (en) | 2019-12-31 | 2022-02-22 | 江苏鲁汶仪器有限公司 | Rotatable Faraday cleaning device and plasma processing system |
-
2020
- 2020-07-24 CN CN202010725037.6A patent/CN113972125B/en active Active
-
2021
- 2021-06-17 WO PCT/CN2021/100681 patent/WO2022017089A1/en active Application Filing
- 2021-06-17 JP JP2023504635A patent/JP7462369B2/en active Active
- 2021-06-17 US US18/006,485 patent/US20230274918A1/en active Pending
- 2021-06-17 KR KR1020237005736A patent/KR20230038793A/en unknown
- 2021-07-20 TW TW110126599A patent/TWI790687B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159660A (en) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Ind Co Ltd | Plasma etching apparatus |
| CN102543636A (en) * | 2010-12-27 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing equipment |
| JP2012185975A (en) * | 2011-03-04 | 2012-09-27 | Shibaura Mechatronics Corp | Plasma processing device and plasma processing method |
| CN103780241A (en) * | 2012-10-23 | 2014-05-07 | 朗姆研究公司 | TCCT match circuit for plasma etch chambers |
| CN110491760A (en) * | 2019-08-23 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of faraday's cleaning device and plasma process system |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022017089A1 (en) | 2022-01-27 |
| KR20230038793A (en) | 2023-03-21 |
| TWI790687B (en) | 2023-01-21 |
| JP2023535448A (en) | 2023-08-17 |
| JP7462369B2 (en) | 2024-04-05 |
| TW202205353A (en) | 2022-02-01 |
| CN113972125A (en) | 2022-01-25 |
| US20230274918A1 (en) | 2023-08-31 |
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Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |
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