CN108502842B - A kind of micro electronmechanical combinational logic device and preparation method thereof applied to fuse security - Google Patents
A kind of micro electronmechanical combinational logic device and preparation method thereof applied to fuse security Download PDFInfo
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- CN108502842B CN108502842B CN201810250078.7A CN201810250078A CN108502842B CN 108502842 B CN108502842 B CN 108502842B CN 201810250078 A CN201810250078 A CN 201810250078A CN 108502842 B CN108502842 B CN 108502842B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
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Abstract
The micro electronmechanical combinational logic device and preparation method thereof that the invention discloses a kind of applied to fuse security.The present invention interferes unit and electrostatic energy to dredge unit and be encapsulated in hemispheric encapsulating shell using by anti-constant current, has antistatic and anti-constant current interference function；Structure of the invention has more wide applicability, adapts to different external environment；Secondly, structure of the invention is small in size, low in energy consumption, at low cost；Structure of the invention integrates processing technology thought with integrated chip technology (FUZE ON CHIP) using fuse, ensures the micro electronmechanical safe-guard system steady operation of fuse security system with layout designs by structure processing；The present invention uses hemispheric encapsulating shell, has anti-overload ability more higher than identical material other forms structure under shock environment；Simultaneous processing is at low cost, it is easy to accomplish yield.
Description
Technical field
The present invention relates to Fuze Safety Systems, and in particular to a kind of micro electronmechanical combinational logic device applied to fuse security
And preparation method thereof.
Background technique
In order to ensure fuze function is safe and reliable in all kinds of ammunitions, Fuze Safety System is rapidly developed.Mainly
Including full mechanical fuze security system and electronic safety and arming system, mechanical fuze security system is because of its structure size is big, and nothing
Method generates shielding action to extraneous complex electromagnetic environment, so that fuze safety performance reduces；Electronic safety and arming system is by mentioning
Height detonation energy threshold, realizes security ability, but minimizing is that his main problems faced can not under complex environment
Guarantee that fuze system is safe and reliable.Security system applied to fuse increasingly develops towards miniaturization, has single function
The integration packaging security system of energy is widely used.But in future war battlefield surroundings it is complicated and changeable, have
The micro electronmechanical security system of simple function is increasingly difficult to adapt to the demand of battlefield complex environment.For example, the electrostatic potential of transient state
Pulse or Transient Currents all can make the fuse for having unity logic function be failed with security system, cause guided missile not fried or
Person's premature burst greatly reduces the ability of effectively strike enemy.
Summary of the invention
For the above problems of the prior art, the invention proposes a kind of micro electronmechanical groups applied to fuse security
Logical device causes constant current, the electrostatic interference factor of Fuze Failure by analyzing, is emulated by multiple physical field and combine MEMS
Integrated processing technology realizes the processing and encapsulation of combinational logic device.
An object of the present invention is to provide a kind of micro electronmechanical combinational logic devices applied to fuse security.
Micro electronmechanical combinational logic device applied to fuse security of the invention includes: insulating substrate, encapsulating shell, anti-constant current
Interference unit and electrostatic energy dredge unit；Wherein, encapsulating shell is formed on an insulating substrate, encapsulating shell is hemispheric shell,
To form closed hemispheric cavity between encapsulating shell and insulating substrate；In cavity, one or more anti-constant currents are dry
It disturbs unit and one or more electrostatic energy dredges setting in unit on an insulating substrate；Anti- constant current interference unit includes the
One substrate, coordination electrode, insulating layer and conducting wire connection electrode, form coordination electrode, over the control electrodes shape on the first substrate
At insulating layer, conducting wire connection electrode is formed on the insulating layer, coordination electrode series connection accesses in external control circuit, conducting wire connection electricity
One end of pole connects priming system, and the other end is connected to detonation chain；When the interference of extraneous no current, the detonation from detonation chain
Signal is sent to priming system by conducting wire connection electrode, and priming system works normally；When there is current interference signal, current interference letter
The work of number drive control electrode causes coordination electrode to occur discharge-induced explosion, the conducting wire connection electrode on the energy fusing upper layer of generation, from
And it realizes and effectively avoids the priming system false triggering phenomenon as caused by extraneous current interference signal；Electrostatic energy dredges unit
Second substrate and two groups of discharge electrodes being formed thereon, but there is distance to be not turned on mutually between two groups of discharge electrodes, two groups
The both ends of discharge electrode are connected in parallel on priming system respectively, and form air stream in the encapsulating shell on two groups of discharge electrodes
Body；In normal state, it is not turned between two groups of discharge electrodes, is open circuit at the both ends of priming system；When priming system both ends have
When the electrostatic potential of the high impulse of interference, the electrostatic potential of high impulse makes the encapsulating shell inner sealing for being connected in parallel on priming system both ends
Small space generates the high temperature of transient state and forceful electric power couples environment, so that air fluid is excited, to puncture, breakdown voltage makes
Two groups of discharge electrodes conductings are obtained, at this point, priming system is short-circuit, the electrostatic energy of high impulse is transferred on two groups of discharge electrodes, from
And guarantee the safety of priming system.
In anti-constant current interference unit, coordination electrode includes a pair of control electrode plate and control electric bridge connecting the two, control
The resistance of electric bridge processed is less than the resistance of coordination electrode plate；There is through-hole, so that coordination electrode be drawn by through-hole on insulating layer；
Conducting wire connection electrode includes couple of conductor electrode plate and conducting wire electric bridge connecting the two, and the resistance of conducting wire electric bridge is less than conducting wire electricity
The resistance of pole plate；Conducting wire electric bridge is Chong Die with the control position of electric bridge；When there is current interference signal, the driving control of current interference signal
Electrode work processed causes to control electric bridge generation discharge-induced explosion, the energy fusing upper layer of generation is led since the resistance of control electric bridge is small
The conducting wire electric bridge of line connection electrode disconnects priming system and detonation chain.
In anti-constant current interference unit, coordination electrode uses low-melting conductive metal, such as aluminium；Insulating layer uses insulation material
Material, such as silicon nitride；Conducting wire connection electrode uses the apparent conductive metal of galvanomagnetic-effect, such as nickel or titanium.One end of coordination electrode is outstanding
Sky, receives current interference signal, and the other end is connected to the low level of external control circuit.
It includes the second substrate and the central electrode being formed thereon and multiple edge electrodes that electrostatic energy, which dredges unit, more
A edge electrodes are distributed around central electrode, and are located in the circle concentric with central electrode, and central electrode is as one group
Discharge electrode, multiple edge electrodes are interconnected as another group of discharge electrode, are connected in parallel on priming system respectively；Edge electrodes
Top has marginal discharge tip, and the center of circle of central electrode is directed toward at marginal discharge tip；The edge and edge electrodes of central electrode
Opposite position has multiple center discharge tips, each center discharge tip is opposite with corresponding marginal discharge tip, and
And there is distance therebetween.The distance between each group of opposite marginal discharge tip and center discharge tip are 3~7 μm.Side
Edge discharge tip and center discharge tip are triangle, and the apex angle of triangle is 45~60 degree.
Electrostatic energy dredge central electrode in unit and multiple edge electrodes include first layer metal layer, adhesion layer and
Second layer metal layer；Wherein, first layer metal layer is aluminium or silver, and adhesion layer is germanium, and second layer metal layer is nickel, tungsten W or gold
Au。
The form of encapsulating shell and the selection of material have vital shadow to micro electronmechanical safe-guard system of the invention
Ring, the present invention use anode linkage technique realize wafer level packaging, in order to improve device absorption external interference energy energy
Power, encapsulating shell of the invention take high temp glass to flow back to form hemispheric cavity, and the ability for dredging extension is strong.By comparing it
The encapsulating material and structure of his form, the encapsulating structure can ensure under high tcmpcrauire-higb pressure-forceful electric power magnetic environment, micro electronmechanical safety
The function-stable of safeguards system, and silicon-glass anodic bonding process costs are low, service efficiency is very high.
Further, multipair signal interconnection pad is set on an insulating substrate, and every a pair of signal interconnection pad is located at envelope
Fill the inside and outside of shell, be electrically connected between every a pair of signal interconnection pad, the coordination electrode plate of anti-constant current interference unit and
Two groups of discharge electrodes that conducting wire connection electrode and electrostatic energy dredge unit are connected to the signal interconnection inside encapsulating shell
On pad, to realize and external electrical connection.
It is another object of the present invention to provide a kind of systems of micro electronmechanical combinational logic device applied to fuse security
Preparation Method.
The preparation method of micro electronmechanical combinational logic device applied to fuse security of the invention, comprising the following steps:
1) anti-constant current interference unit is prepared:
A) first substrate of insulation is provided；
B) one layer of coordination electrode metal layer is sputtered on the first substrate；
C) coordination electrode metallic layer graphic is made by dry etching or wet corrosion technique, forms coordination electrode；
D) insulating layer is formed over the control electrodes；
E) to layer pattern, through-hole is formed on the insulating layer；
F) a layer conductor connection electrode metal layer is sputtered on the insulating layer；
G) conducting wire connection electrode metallic layer graphic is made by dry etching or wet corrosion technique, forms conducting wire connection
It is standby to complete anti-constant current interference unit style for electrode；
2) it prepares electrostatic energy and dredges unit:
A) second substrate of insulation is provided；
B) first layer metal layer is sputtered on the second substrate；
C) adhesion layer is formed on first layer metal layer；
D) second layer metal layer is sputtered on adhesion layer；
E) to first layer metal layer, adhesion layer and second layer metal layer pattern, to form central electrode and multiple sides
Edge electrode, it is standby that completion electrostatic energy dredges unit style；
3) multipair signal interconnection pad is formed using sputtering technology on an insulating substrate, unit and electrostatic is interfered into anti-constant current
Energy dredges unit by the electrical connection of wire bonding realization and the signal interconnection pad in insulating substrate, to realize encapsulation
Afterwards, anti-constant current interference unit and electrostatic energy dredge the electrical connection of unit；
4) glass substrate is bonded by anode linkage technique on an insulating substrate；
5) on a glass substrate by top substrate layer bonding, and in anti-constant current interference unit and electrostatic energy the phase of unit is dredged
It is punched at position by dry etching；
6) high-temperature annealing process is carried out, since glass is different from the temperature characterisitic of insulating substrate, glass substrate is made in high temperature
Under, is expanded and flowed back by top substrate layer, formed hemispheric encapsulating shell, single combination is realized eventually by scribing process
The preparation of logical device.
In step 4), insulating substrate uses silicon substrate.
In step 5), top substrate layer uses silicon.
Advantages of the present invention:
The present invention interferes unit and electrostatic energy to dredge unit and be encapsulated in hemispheric encapsulating shell using by anti-constant current, has
There are antistatic and anti-constant current interference function；Structure of the invention has more wide applicability, adapts to different external environment；Its
It is secondary, structure of the invention it is small in size, low in energy consumption, at low cost；Structure of the invention uses fuse integrated chip technology (FUZE ON
CHIP processing technology thought) is integrated, ensures the micro electronmechanical safety guarantee of fuse security system with layout designs by structure processing
System steady operation；The present invention uses hemispheric encapsulating shell, has under shock environment than identical material other forms structure
Higher anti-overload ability；Simultaneous processing is at low cost, it is easy to accomplish yield.
Detailed description of the invention
Fig. 1 is the schematic diagram of one embodiment of the micro electronmechanical combinational logic device applied to fuse security of the invention；
Fig. 2 is that the anti-constant current of one embodiment of the micro electronmechanical combinational logic device applied to fuse security of the invention is dry
Disturb the schematic diagram of unit；
Fig. 3 is the electrostatic energy of one embodiment of the micro electronmechanical combinational logic device applied to fuse security of the invention
Dredge the schematic diagram of unit.
Specific embodiment
With reference to the accompanying drawing, by specific embodiment, the present invention is further explained.
As shown in Figure 1, the micro electronmechanical combinational logic device applied to fuse security of the present embodiment include: insulating substrate 4,
Encapsulating shell 3, signal interconnection pad 5, anti-constant current interference unit 1 and electrostatic energy dredge unit 2；Wherein, shape on an insulating substrate
At encapsulating shell, encapsulating shell is hemispheric shell, to form closed hemispheric sky between encapsulating shell and insulating substrate
Chamber；In cavity, multiple anti-constant current interference units 1 and electrostatic energy dredge the setting of unit 2 on an insulating substrate.In insulating substrate
The upper multipair signal interconnection pad 5 of setting, every a pair of signal interconnection pad are located at the inside and outside of encapsulating shell, every a pair of of letter
It is electrically connected between number interconnect pad.
As shown in Fig. 2, anti-constant current interference unit includes the first substrate, coordination electrode, insulating layer and conducting wire connection electrode, In
Coordination electrode is formed on first substrate, forms insulating layer over the control electrodes, and conducting wire connection electrode is formed on the insulating layer.Control
Electrode includes a pair of control electrode plate LJ3 and LJ4 and control electric bridge connecting the two, and the resistance for controlling electric bridge is less than control electricity
The resistance of pole plate, a coordination electrode plate LJ3 is hanging, another control motor plate LJ4 is connected to the low electricity of external control circuit
It is flat；There is through-hole, so that coordination electrode be drawn by through-hole on insulating layer；Conducting wire connection electrode includes couple of conductor electrode plate
KZ1 and KZ2 and conducting wire electric bridge connecting the two, the resistance of conducting wire electric bridge are less than the resistance of lead electrode plate, a conducting wire electricity
Pole plate KZ1 is connected to priming system, another lead electrode plate KZ2 is connected to detonation chain.A pair of control electrode plate LJ3 and LJ4
And couple of conductor electrode plate KZ1 and KZ2 lead to signal interconnection pad 5 respectively, to realize and external electrical connection.
As shown in figure 3, it includes that electrostatic energy is dredged unit including the second substrate 21 and formed that electrostatic energy, which dredges unit,
Central electrode 22 and multiple edge electrodes 23 on it, multiple edge electrodes around central electrode be distributed, and be located at
In the concentric circle of central electrode, central electrode is interconnected as one group of discharge electrode, multiple edge electrodes as another group
Discharge electrode is connected in parallel on priming system respectively；The top of edge electrodes has marginal discharge tip, electrocardio in discharge tip direction
The center of circle of pole；The edge of the central electrode position opposite with edge electrodes has multiple center discharge tips, each center is put
Electric tip is opposite with corresponding marginal discharge tip, and has distance therebetween.Each group of opposite marginal discharge tip with
The distance between center discharge tip is 3~7 μm.Marginal discharge tip and center discharge tip are triangle, the top of triangle
The central electrode and multiple edge electrodes that angle is 45~60 degree include first layer metal layer, adhesion layer and second layer metal layer；
Wherein, first layer metal layer is aluminium, and adhesion layer is germanium and second layer metal layer is nickel.Central electrode is by drawing pad
24 lead to signal interconnection pad 5.Edge electrodes are directly led out to signal interconnection pad 5.
The preparation method of the micro electronmechanical combinational logic device applied to fuse security of the present embodiment, comprising the following steps:
The preparation method of micro electronmechanical combinational logic device applied to fuse security of the invention, comprising the following steps:
1) anti-constant current interference unit is prepared:
A) first substrate of the silica of 500nm thickness as insulation is formed in silicon (100)；
B) one layer 1 μm of coordination electrode metal layer is sputtered on the first substrate；
C) coordination electrode metallic layer graphic is made by dry etching or wet corrosion technique, forms coordination electrode；
D) growth 500nm silicon nitride forms insulating layer over the control electrodes；
E) to layer pattern, through-hole is formed on the insulating layer；
F) the conducting wire connection electrode metal layer of one layer of 500nm thickness is sputtered on the insulating layer；
G) conducting wire connection electrode metallic layer graphic is made by dry etching or wet corrosion technique, forms conducting wire connection
It is standby to complete anti-constant current interference unit style for electrode；
2) it prepares electrostatic energy and dredges unit:
A) second substrate of the silica of 500nm thickness as insulation is formed on silicon (100)；
B) aluminium of 1 μ m-thick is sputtered on the second substrate as first layer metal layer；
C) one layer of germanium is sputtered on first layer metal layer form adhesion layer；
D) Ni of 500nm thickness is sputtered on adhesion layer as second layer metal layer；
E) to first layer metal layer, adhesion layer and second layer metal layer pattern, to form central electrode and multiple sides
Edge electrode, it is standby that completion electrostatic energy dredges unit style；
3) multipair signal interconnection pad is formed using sputtering technology on an insulating substrate, unit and electrostatic is interfered into anti-constant current
Energy dredges unit by the electrical connection of wire bonding realization and the signal interconnection pad in insulating substrate, to realize encapsulation
Afterwards, anti-constant current interference unit and electrostatic energy dredge the electrical connection of unit；
4) glass substrate is bonded by anode linkage technique on an insulating substrate；
5) on a glass substrate by the top substrate layer bonding of silicon, and in anti-constant current unit and electrostatic energy is interfered to dredge unit
Relative position at hole realized by dry etching；
6) high-temperature annealing process is carried out, since glass is different from the temperature characterisitic of the insulating substrate of silicon, glass substrate is in height
Under temperature effect, is expanded and flowed back by top substrate layer, form hemispheric encapsulating shell, single eventually by scribing process realization
The preparation of combinational logic device.
It is finally noted that the purpose for publicizing and implementing example is to help to further understand the present invention, but this field
Technical staff be understood that without departing from the spirit and scope of the invention and the appended claims, it is various replacement and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
Subject to the range that sharp claim defines.
Claims (9)
1. a kind of micro electronmechanical combinational logic device applied to fuse security, which is characterized in that the combinational logic device includes:
Insulating substrate, encapsulating shell, anti-constant current interference unit and electrostatic energy dredge unit；Wherein, encapsulating shell is formed on an insulating substrate,
Encapsulating shell is hemispheric shell, to form closed hemispheric cavity between encapsulating shell and insulating substrate；In cavity
Interior, one or more anti-constant current interference units and one or more electrostatic energy dredge unit setting on an insulating substrate；It is anti-
It includes the first substrate, coordination electrode, insulating layer and conducting wire connection electrode that unit is interfered in constant current, forms control electricity on the first substrate
Pole forms insulating layer over the control electrodes, and conducting wire connection electrode, the external control of coordination electrode series connection access is formed on the insulating layer
In circuit, one end of conducting wire connection electrode connects priming system, and the other end is connected to detonation chain；When the interference of extraneous no current,
Time break from detonation chain is sent to priming system by conducting wire connection electrode, and priming system works normally；When there is electric current dry
When disturbing signal, current interference signal drive control electrode work, cause coordination electrode occur discharge-induced explosion, generation energy fusing on
The conducting wire connection electrode of layer effectively avoids the priming system false triggering phenomenon as caused by extraneous current interference signal to realize；
It includes the second substrate and two groups of discharge electrodes being formed thereon that electrostatic energy, which dredges unit, have between two groups of discharge electrodes away from
From being not turned on mutually, the both ends of two groups of discharge electrodes are connected in parallel on priming system respectively, and the envelope on two groups of discharge electrodes
It fills and forms air fluid in shell；In normal state, it is not turned between two groups of discharge electrodes, is open circuit at the both ends of priming system；
When priming system both ends have the electrostatic potential of noisy high impulse, the electrostatic potential of high impulse to be connected in parallel on priming system both ends
Encapsulating shell inner sealing small space generate transient state high temperature and forceful electric power couple environment so that air fluid is excited, to send out
Raw breakdown, breakdown voltage make two groups of discharge electrode conductings, at this point, priming system is short-circuit, the electrostatic energy of high impulse is transferred to
On two groups of discharge electrodes, to guarantee the safety of priming system.
2. combinational logic device as described in claim 1, which is characterized in that in the anti-constant current interference unit, coordination electrode
Including a pair of control electrode plate and control electric bridge connecting the two, the resistance for controlling electric bridge is less than the resistance of coordination electrode plate；
There is through-hole, so that coordination electrode be drawn by through-hole on insulating layer；Conducting wire connection electrode include couple of conductor electrode plate with
And conducting wire electric bridge connecting the two, the resistance of conducting wire electric bridge are less than the resistance of lead electrode plate；Conducting wire electric bridge and control electric bridge
Position overlapping；When there is current interference signal, current interference signal drive control electrode work, due to controlling the resistance of electric bridge
It is small, cause to control electric bridge generation discharge-induced explosion, the conducting wire electric bridge of the conducting wire connection electrode on the energy fusing upper layer of generation disconnects firer
Product and detonation chain.
3. combinational logic device as described in claim 1, which is characterized in that in the anti-constant current interference unit, coordination electrode
Using low-melting conductive metal；The insulating layer uses insulating materials；The conducting wire connection electrode is obvious using galvanomagnetic-effect
Conductive metal；One end of the coordination electrode is hanging, receives current interference signal, and the other end is connected to external control circuit
Low level.
4. combinational logic device as described in claim 1, which is characterized in that it includes the second lining that the electrostatic energy, which dredges unit,
Bottom and the central electrode being formed thereon and multiple edge electrodes, multiple edge electrodes are distributed around central electrode, and
In the circle concentric with central electrode, central electrode interconnects conduct as one group of discharge electrode, multiple edge electrodes
Another group of discharge electrode, is connected in parallel on priming system respectively；The top of edge electrodes has marginal discharge tip, marginal discharge tip
It is directed toward the center of circle of central electrode；The edge of the central electrode position opposite with edge electrodes has multiple center discharge tips, often
One center discharge tip is opposite with corresponding marginal discharge tip, and has distance therebetween.
5. combinational logic device as claimed in claim 4, which is characterized in that described each group opposite marginal discharge tip with
The distance between center discharge tip is 3~7 μm.
6. combinational logic device as claimed in claim 4, which is characterized in that the marginal discharge tip and center discharge tip
For triangle, the apex angle of triangle is 45~60 degree.
7. combinational logic device as described in claim 1, which is characterized in that the electrostatic energy dredges the middle electrocardio in unit
Pole and multiple edge electrodes include first layer metal layer, adhesion layer and second layer metal layer；Wherein, first layer metal layer is aluminium
Or silver, adhesion layer are germanium, second layer metal layer is nickel, tungsten or gold.
8. a kind of preparation method applied to the micro electronmechanical combinational logic device of fuse security as described in claim 1, special
Sign is that the preparation method comprises the following steps:
1) anti-constant current interference unit is prepared:
A) first substrate of insulation is provided；
B) one layer of coordination electrode metal layer is sputtered on the first substrate；
C) coordination electrode metallic layer graphic is made by dry etching or wet corrosion technique, forms coordination electrode；
D) insulating layer is formed over the control electrodes；
E) to layer pattern, through-hole is formed on the insulating layer；
F) a layer conductor connection electrode metal layer is sputtered on the insulating layer；
G) conducting wire connection electrode metallic layer graphic is made by dry etching or wet corrosion technique, forms conducting wire connection electricity
It is standby to complete anti-constant current interference unit style for pole；
2) it prepares electrostatic energy and dredges unit:
A) second substrate of insulation is provided；
B) first layer metal layer is sputtered on the second substrate；
C) adhesion layer is formed on first layer metal layer；
D) second layer metal layer is sputtered on adhesion layer；
E) to first layer metal layer, adhesion layer and second layer metal layer pattern, to form central electrode and multiple edges electricity
Pole, it is standby that completion electrostatic energy dredges unit style；
3) multipair signal interconnection pad is formed using sputtering technology on an insulating substrate, unit and electrostatic energy is interfered into anti-constant current
It dredges unit and realizes that the electrical connection with the signal interconnection pad in insulating substrate is prevented after realizing encapsulation by wire bonding
Constant current interference unit and electrostatic energy dredge the electrical connection of unit；
4) glass substrate is bonded by anode linkage technique on an insulating substrate；
5) on a glass substrate by top substrate layer bonding, and in anti-constant current interference unit and electrostatic energy the opposite position of unit is dredged
Place is set to punch by dry etching；
6) carry out high-temperature annealing process, since glass is different from the temperature characterisitic of insulating substrate, glass substrate under high temperature action,
It is expanded and is flowed back by top substrate layer, formed hemispheric encapsulating shell, single combinational logic is realized eventually by scribing process
The preparation of device.
9. preparation method as claimed in claim 8, which is characterized in that in step 5), top substrate layer uses silicon.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810250078.7A CN108502842B (en) | 2018-03-26 | 2018-03-26 | A kind of micro electronmechanical combinational logic device and preparation method thereof applied to fuse security |
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| CN201810250078.7A CN108502842B (en) | 2018-03-26 | 2018-03-26 | A kind of micro electronmechanical combinational logic device and preparation method thereof applied to fuse security |
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| CN108502842B true CN108502842B (en) | 2019-12-03 |
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| CN109931825B (en) * | 2018-11-21 | 2020-06-02 | 北京理工大学 | MEMS electromagnetic energy dredging device applied to fuze and preparation method thereof |
| CN111220035B (en) * | 2020-03-26 | 2020-11-27 | 北京理工大学 | Solid fuse of miniature attack load ammunition fuze and control method thereof |
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| US6133146A (en) * | 1996-05-09 | 2000-10-17 | Scb Technologies, Inc. | Semiconductor bridge device and method of making the same |
| FR2784176B1 (en) * | 1998-10-06 | 2004-11-26 | Livbag Snc | ELECTRO-PYROTECHNIC INITIATION SYSTEM PROTECTED AGAINST ELECTROSTATIC DISCHARGES |
| CN201262533Y (en) * | 2008-05-08 | 2009-06-24 | 南京理工大学 | Semiconductor resistance bridge electrode plug |
| CN103344150B (en) * | 2013-07-12 | 2015-02-18 | 南京理工大学 | Schottky junction explosive-electric transducer component and manufacturing method thereof |
| CN103344151B (en) * | 2013-07-12 | 2015-02-25 | 南京理工大学 | Schottky junction plane explosion switch used for exploding foil initiator and preparation method thereof |
| WO2016011463A1 (en) * | 2014-07-02 | 2016-01-21 | Van Dyk Andrè | An initiator |
| CN104266553B (en) * | 2014-07-24 | 2016-01-13 | 娄文忠 | A kind of electric spark workpiece assembly |
| KR101823329B1 (en) * | 2016-04-04 | 2018-01-30 | 주식회사 풍산 | Micro-Electro-Mechanical-System relay for electric exploding initiator safety and Detonator using the relay |
| CN106907962A (en) * | 2017-01-18 | 2017-06-30 | 沈阳理工大学 | Low overload MEMS detonations actuator |
| CN107830773B (en) * | 2017-10-09 | 2019-06-14 | 北京理工大学 | A kind of slim MEMS motion control integrated apparatus and propellant actuated device |
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2018
- 2018-03-26 CN CN201810250078.7A patent/CN108502842B/en active Active
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