CN108486554B - 一种在半导体硅器件上化学镀Ni、Au的工艺 - Google Patents

一种在半导体硅器件上化学镀Ni、Au的工艺 Download PDF

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CN108486554B
CN108486554B CN201810540576.5A CN201810540576A CN108486554B CN 108486554 B CN108486554 B CN 108486554B CN 201810540576 A CN201810540576 A CN 201810540576A CN 108486554 B CN108486554 B CN 108486554B
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张志向
任雄
张晶辉
蒋宇飞
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TIANSHUI TIANGUANG SEMICONDUCTOR CO Ltd
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Abstract

本发明涉及一种在半导体硅器件上化学镀Ni、Au的工艺；其工艺步骤包括配制镀镍液、配置镀金液、氯化金活化液配置、一次镀镍、镍烧结、硝酸处理、二次镀镍和镀金；采用本发明的方法在半导体硅器件上形成的Ni、Au镀层，其镀层金属细腻、均匀，镀层金属颗粒小且致密，镀层粘附性好。

Description

一种在半导体硅器件上化学镀Ni、Au的工艺
技术领域
本发明涉及一种在半导体硅器件上化学镀Ni、Au的工艺。
背景技术
现有半导体硅器件Ni、Au镀层通常采用电镀方法进行，其具有以下缺陷：镀层金属粗糙，镀层不均匀，镀层金属颗粒大，金属致密性差，镀层粘附性不好，对于正负极在同一面的器件电镀只能够镀一个极性，不能满足工艺要求，工艺存在局限性。
发明内容
本发明的目的是针对现有技术存在的问题提供一种在半导体硅器件上化学镀Ni、Au的工艺。
本发明的具体技术方案如下：
一种在半导体硅器件上化学镀Ni、Au的工艺，其特征在于，包括以下步骤：
A、配制镀镍液：向石英缸中加入7200ml离子水、240g氯化镍、400g氯化铵、520g柠檬酸铵搅拌1-2min，将石英缸内温度升至70±5℃，向石英缸内加入80克次亚磷酸钠搅拌1-2min，再将石英缸内温度升至87±5℃，向石英缸内加入氨水调节pH值至8.5-9.0，得到镀镍液；
B、配置镀金液：向石英缸中加入8100ml离子水、36g氰金化钾搅拌1-2min，将石英缸内温度升至75±5℃，向石英缸内加入900g柠檬酸钠搅拌1-2min，再将石英缸内温度升至100±5℃得到镀金液；
C、氯化金活化液配置：向活化剂聚乙烯缸加入5g氯化金、100ml盐酸、550ml氢氟酸，7600ml离子水搅拌1-2分钟得到氯化金活化液；
D、一次镀镍：将硅片浸入体积份数2.6-3%的氢氟酸中腐蚀10±2秒，冲洗干净，再浸入体积份数2.6-3%的氢氟酸中二次腐蚀10±2秒，冲洗干净后放入氯化金活化液活化6±1秒，冲洗干燥后放入温度95±3℃的镀镍液中镀镍90±6秒，移入溢流槽中逆水流方向进级冲洗12±1分钟，甩干后置于氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度130±20℃，氮气流量2±0.5LPM；
E、镍烧结:将一次镀镍后的硅片图形面对图形面排片放入石英烧结舟中，预热10分钟，温度575℃烧结35±1分钟，以1.5℃/分钟降温至500℃，取出冷却；
F：硝酸处理：镍烧结后的硅片放入浓度为体积份数70±1%硝酸中，温度95±5℃煮4±1分钟，清洗；
G：二次镀镍：将硝酸处理后的硅片浸入浓度为70±1%氢氟酸中腐蚀5-7秒，清洗干燥后放入温度100±3℃的镀镍液中进行二次镀镍，冲洗甩干后放入氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度130±20℃，氮气流量2±0.5LPM；
H：镀金：将二次镀镍后的硅片放入温度110±5℃镀金液中镀金20-25秒，清洗甩干后放入氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度130±20℃，氮气流量2±0.5LPM。
本发明的工作原理和有益效果如下：
本发明采用化学化学方法在半导体硅器件上化学镀Ni、Au，在推特定条件下，水溶液中的金属被还原剂还原，并沉积在固态基体表面，这个过程镀层是可以不断增厚，氢氟酸主要清洁表面氧化层进行镀镍，然后通过镍烧结形成金半接触或金属与金属的紧密接触，处理表面氧化层进行二次镀镍，二次镀镍后再镀金，镍层为焊接层金属，金为保护层金属；采用本发明的方法在半导体硅器件上形成的Ni、Au镀层，其镀层金属细腻、均匀，镀层金属颗粒小且致密，镀层粘附性好。
具体实施方式
实施例1
一种在半导体硅器件上化学镀Ni、Au的工艺，包括以下步骤：
A、配制镀镍液：向石英缸中加入7200ml离子水、240g氯化镍、400g氯化铵、520g柠檬酸铵搅拌1min，将石英缸内温度升至65℃，向石英缸内加入80克次亚磷酸钠搅拌1min，再将石英缸内温度升至87±5℃，向石英缸内加入氨水调节pH值至8.5，得到镀镍液；
B、配置镀金液：向石英缸中加入8100ml离子水、36g氰金化钾搅拌1-2min，将石英缸内温度升至70℃，向石英缸内加入900g柠檬酸钠搅拌1min，再将石英缸内温度升至95℃得到镀金液；
C、氯化金活化液配置：向活化剂聚乙烯缸加入5g氯化金、100ml盐酸、550ml氢氟酸，7600ml离子水搅拌1分钟得到氯化金活化液；
D、一次镀镍：将硅片浸入体积份数2.6%的氢氟酸中腐蚀8秒，冲洗干净，再浸入体积份数2.6%的氢氟酸中二次腐蚀8秒，冲洗干净后放入氯化金活化液活化5秒，冲洗干燥后放入温度92℃的镀镍液中镀镍84秒，移入溢流槽中逆水流方向进级冲洗11分钟，甩干后置于氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度110℃，氮气流量1.5LPM；
E、镍烧结:将一次镀镍后的硅片图形面对图形面排片放入石英烧结舟中，预热10分钟，温度575℃烧结34分钟，以1.5℃/分钟降温至500℃，取出冷却；
F：硝酸处理：镍烧结后的硅片放入体积份数69%的硝酸中，温度90℃煮3分钟，清洗；
G：二次镀镍：将硝酸处理后的硅片浸入体积份数2.6%氢氟酸中腐蚀5秒，清洗干燥后放入温度97℃的镀镍液中进行二次镀镍，冲洗甩干后放入氮气烘箱内烘烤15分钟，氮气烘箱烘烤温度110℃，氮气流量1.5LPM；
H：镀金：将二次镀镍后的硅片放入温度105℃镀金液中镀金20秒，清洗甩干后放入氮气烘箱内烘烤15分钟，氮气烘箱烘烤温度110℃，氮气流量1.5LPM。
实施例2
一种在半导体硅器件上化学镀Ni、Au的工艺，包括以下步骤：
A、配制镀镍液：向石英缸中加入7200ml离子水、240g氯化镍、400g氯化铵、520g柠檬酸铵搅拌1.5min，将石英缸内温度升至70℃，向石英缸内加入80克次亚磷酸钠搅拌1.5min，再将石英缸内温度升至87℃，向石英缸内加入氨水调节pH值至8.5，得到镀镍液；
B、配置镀金液：向石英缸中加入8100ml离子水、36g氰金化钾搅拌1.5min，将石英缸内温度升至75℃，向石英缸内加入900g柠檬酸钠搅拌1.5min，再将石英缸内温度升至100℃得到镀金液；
C、氯化金活化液配置：向活化剂聚乙烯缸加入5g氯化金、100ml盐酸、550ml氢氟酸，7600ml离子水搅拌1.5分钟得到氯化金活化液；
D、一次镀镍：将硅片浸入体积份数2.8%的氢氟酸中腐蚀10秒，冲洗干净，再浸入体积份数2.8%的氢氟酸中二次腐蚀10秒，冲洗干净后放入氯化金活化液活化6秒，冲洗干燥后放入温度95℃的镀镍液中镀镍90秒，移入溢流槽中逆水流方向进级冲洗12分钟，甩干后置于氮气烘箱内烘烤20分钟，氮气烘箱烘烤温度130℃，氮气流量2LPM；
E、镍烧结:将一次镀镍后的硅片图形面对图形面排片放入石英烧结舟中，预热10分钟，温度575℃烧结35分钟，以1.5℃/分钟降温至500℃，取出冷却；
F：硝酸处理：镍烧结后的硅片放入体积份数70%硝酸中，温度95℃煮4分钟，清洗；
G：二次镀镍：将硝酸处理后的硅片浸入体积份数2.8%氢氟酸中腐蚀6秒，清洗干燥后放入温度100℃的镀镍液中进行二次镀镍，冲洗甩干后放入氮气烘箱内烘烤20分钟，氮气烘箱烘烤温度130℃，氮气流量2LPM；
H：镀金：将二次镀镍后的硅片放入温度110℃镀金液中镀金23秒，清洗甩干后放入氮气烘箱内烘烤20分钟，氮气烘箱烘烤温度130℃，氮气流量2LPM。
实施例3
一种在半导体硅器件上化学镀Ni、Au的工艺，包括以下步骤：
A、配制镀镍液：向石英缸中加入7200ml离子水、240g氯化镍、400g氯化铵、520g柠檬酸铵搅拌2min，将石英缸内温度升至75℃，向石英缸内加入80克次亚磷酸钠搅拌2min，再将石英缸内温度升至93℃，向石英缸内加入氨水调节pH值至9.0，得到镀镍液；
B、配置镀金液：向石英缸中加入8100ml离子水、36g氰金化钾搅拌2min，将石英缸内温度升至80℃，向石英缸内加入900g柠檬酸钠搅拌2min，再将石英缸内温度升至105℃得到镀金液；
C、氯化金活化液配置：向活化剂聚乙烯缸加入5g氯化金、100ml盐酸、550ml氢氟酸，7600ml离子水搅拌2分钟得到氯化金活化液；
D、一次镀镍：将硅片浸入体积份数3%的氢氟酸中腐蚀12秒，冲洗干净，再浸入体积份数3%的氢氟酸中二次腐蚀12秒，冲洗干净后放入氯化金活化液活化7秒，冲洗干燥后放入温度98℃的镀镍液中镀镍96秒，移入溢流槽中逆水流方向进级冲洗13分钟，甩干后置于氮气烘箱内烘烤25分钟，氮气烘箱烘烤温度150℃，氮气流量2.5LPM；
E、镍烧结:将一次镀镍后的硅片图形面对图形面排片放入石英烧结舟中，预热10分钟，温度575℃烧结36分钟，以1.5℃/分钟降温至500℃，取出冷却；
F：硝酸处理：镍烧结后的硅片放入体积份数71%硝酸中，温度100℃煮5分钟，清洗；
G：二次镀镍：将硝酸处理后的硅片浸入体积份数71%氢氟酸中腐蚀7秒，清洗干燥后放入温度103℃的镀镍液中进行二次镀镍，冲洗甩干后放入氮气烘箱内烘烤25分钟，氮气烘箱烘烤温度150℃，氮气流量2.5LPM；
H：镀金：将二次镀镍后的硅片放入温度115℃镀金液中镀金25秒，清洗甩干后放入氮气烘箱内烘烤25分钟，氮气烘箱烘烤温度150℃，氮气流量2.5LPM。

Claims (1)

1.一种在半导体硅器件上化学镀Ni、Au的工艺，其特征在于，包括以下步骤：
A、配制镀镍液：向石英缸中加入7200ml离子水、240g氯化镍、400g氯化铵、520g柠檬酸铵搅拌1-2min，将石英缸内温度升至70±5℃，向石英缸内加入80克次亚磷酸钠搅拌1-2min，再将石英缸内温度升至87±5℃，向石英缸内加入氨水调节pH值至8.5-9.0，得到镀镍液；
B、配置镀金液：向石英缸中加入8100ml离子水、36g氰金化钾搅拌1-2min，将石英缸内温度升至75±5℃，向石英缸内加入900g柠檬酸钠搅拌1-2min，再将石英缸内温度升至100±5℃得到镀金液；
C、氯化金活化液配置：向活化剂聚乙烯缸加入5g氯化金、100ml盐酸、550ml氢氟酸，7600ml离子水搅拌1-2分钟得到氯化金活化液；
D、一次镀镍：将硅片浸入体积份数2.6-3%的氢氟酸中腐蚀10±2秒，冲洗干净，再浸入体积份数2.6-3%的氢氟酸中二次腐蚀10±2秒，冲洗干净后放入氯化金活化液活化6±1秒，冲洗干燥后放入温度95±3℃的镀镍液中镀镍90±6秒，移入溢流槽中逆水流方向进级冲洗12±1分钟，甩干后置于氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度130±20℃，氮气流量2±0.5LPM；
E、镍烧结:将一次镀镍后的硅片图形面对图形面排片放入石英烧结舟中，预热10分钟，温度575℃烧结35±1分钟，以1.5℃/分钟降温至500℃，取出冷却；
F：硝酸处理：镍烧结后的硅片放入为体积份数70±1%硝酸中，温度95±5℃煮4±1分钟，清洗；
G：二次镀镍：将硝酸处理后的硅片浸入体积份数2.6-3%的氢氟酸中腐蚀5-7秒，清洗干燥后放入温度100±3℃的镀镍液中进行二次镀镍，冲洗甩干后放入氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度130±20℃，氮气流量2±0.5LPM；
H：镀金：将二次镀镍后的硅片放入温度110±5℃镀金液中镀金20-25秒，清洗甩干后放入氮气烘箱内烘烤20±5分钟，氮气烘箱烘烤温度130±20℃，氮气流量2±0.5LPM。
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