CN108463575A - 由多相交变或脉冲电流驱动的等离子体装置及产生等离子体的方法 - Google Patents

由多相交变或脉冲电流驱动的等离子体装置及产生等离子体的方法 Download PDF

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Publication number
CN108463575A
CN108463575A CN201680078860.4A CN201680078860A CN108463575A CN 108463575 A CN108463575 A CN 108463575A CN 201680078860 A CN201680078860 A CN 201680078860A CN 108463575 A CN108463575 A CN 108463575A
Authority
CN
China
Prior art keywords
hollow cathode
plasma
output wave
hollow
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680078860.4A
Other languages
English (en)
Chinese (zh)
Inventor
J·钱伯斯
P·马诗威茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Glass Europe SA
AGC Inc
AGC Flat Glass North America Inc
Original Assignee
AGC Glass Europe SA
Asahi Glass Co Ltd
AGC Flat Glass North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/942,737 external-priority patent/US9721765B2/en
Priority claimed from US14/942,673 external-priority patent/US9721764B2/en
Application filed by AGC Glass Europe SA, Asahi Glass Co Ltd, AGC Flat Glass North America Inc filed Critical AGC Glass Europe SA
Publication of CN108463575A publication Critical patent/CN108463575A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/44—Plasma torches using an arc using more than one torch
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN201680078860.4A 2015-11-16 2016-11-09 由多相交变或脉冲电流驱动的等离子体装置及产生等离子体的方法 Pending CN108463575A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/942,737 2015-11-16
US14/942,737 US9721765B2 (en) 2015-11-16 2015-11-16 Plasma device driven by multiple-phase alternating or pulsed electrical current
US14/942,673 2015-11-16
US14/942,673 US9721764B2 (en) 2015-11-16 2015-11-16 Method of producing plasma by multiple-phase alternating or pulsed electrical current
PCT/US2016/061134 WO2017087233A1 (en) 2015-11-16 2016-11-09 Plasma device driven by multiple-phase alternating or pulsed electrical current and method of producing a plasma

Publications (1)

Publication Number Publication Date
CN108463575A true CN108463575A (zh) 2018-08-28

Family

ID=58717680

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680078860.4A Pending CN108463575A (zh) 2015-11-16 2016-11-09 由多相交变或脉冲电流驱动的等离子体装置及产生等离子体的方法

Country Status (10)

Country Link
EP (1) EP3377673A4 (pt)
JP (1) JP2018535532A (pt)
KR (1) KR20180095530A (pt)
CN (1) CN108463575A (pt)
BR (1) BR112018009864A8 (pt)
EA (1) EA201891175A1 (pt)
MX (1) MX2018006095A (pt)
PH (1) PH12018501049A1 (pt)
SG (1) SG11201804129YA (pt)
WO (1) WO2017087233A1 (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2680318C1 (ru) * 2018-08-31 2019-02-19 Общество С Ограниченной Ответственностью "Трипл-Сп" Система охлаждения высоковольтного электродугового плазмотрона переменного тока и высоковольтный электродуговой плазмотрон переменного тока с системой охлаждения (варианты)
CN115355504A (zh) * 2022-08-15 2022-11-18 浙江大学台州研究院 一种多相交流等离子体炬和固体废物处理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050115933A1 (en) * 2003-12-02 2005-06-02 Kong Peter C. Plasma generators, reactor systems and related methods
US7411353B1 (en) * 2007-05-11 2008-08-12 Rutberg Alexander P Alternating current multi-phase plasma gas generator with annular electrodes
US20100028238A1 (en) * 2008-08-04 2010-02-04 Agc Flat Glass North America, Inc. Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition
US20120164353A1 (en) * 2009-09-05 2012-06-28 John Madocks Plasma enhanced chemical vapor deposition apparatus
WO2015022621A1 (en) * 2013-08-11 2015-02-19 Ariel - University Research And Development Company, Ltd. Ferroelectric emitter for electron beam emission and radiation generation
US20150235814A1 (en) * 2012-11-02 2015-08-20 Asahi Glass Company, Limited Plasma source for a plasma cvd apparatus and a manufacturing method of an article using the plasma source

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226395A (ja) * 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050115933A1 (en) * 2003-12-02 2005-06-02 Kong Peter C. Plasma generators, reactor systems and related methods
US7411353B1 (en) * 2007-05-11 2008-08-12 Rutberg Alexander P Alternating current multi-phase plasma gas generator with annular electrodes
US20100028238A1 (en) * 2008-08-04 2010-02-04 Agc Flat Glass North America, Inc. Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition
US20120164353A1 (en) * 2009-09-05 2012-06-28 John Madocks Plasma enhanced chemical vapor deposition apparatus
US20150235814A1 (en) * 2012-11-02 2015-08-20 Asahi Glass Company, Limited Plasma source for a plasma cvd apparatus and a manufacturing method of an article using the plasma source
WO2015022621A1 (en) * 2013-08-11 2015-02-19 Ariel - University Research And Development Company, Ltd. Ferroelectric emitter for electron beam emission and radiation generation

Also Published As

Publication number Publication date
SG11201804129YA (en) 2018-06-28
BR112018009864A8 (pt) 2019-02-26
JP2018535532A (ja) 2018-11-29
MX2018006095A (es) 2018-11-12
KR20180095530A (ko) 2018-08-27
EP3377673A4 (en) 2019-07-31
WO2017087233A1 (en) 2017-05-26
BR112018009864A2 (pt) 2018-11-13
EA201891175A1 (ru) 2018-12-28
PH12018501049A1 (en) 2019-01-28
EP3377673A1 (en) 2018-09-26

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Application publication date: 20180828

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