CN108447901A - A kind of anti-integral dose radiation PNP transistor structure - Google Patents
A kind of anti-integral dose radiation PNP transistor structure Download PDFInfo
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- CN108447901A CN108447901A CN201810168020.8A CN201810168020A CN108447901A CN 108447901 A CN108447901 A CN 108447901A CN 201810168020 A CN201810168020 A CN 201810168020A CN 108447901 A CN108447901 A CN 108447901A
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- 230000005855 radiation Effects 0.000 title claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000004804 winding Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000191 radiation effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 1
- 208000019155 Radiation injury Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010960 commercial process Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention discloses a kind of anti-integral dose radiation PNP transistor structure, including p-substrate and the n traps that are arranged in p-substrate；2nd areas p+ of setting and n traps interval in p-substrate；The first areas p+ and the injection regions n+ are respectively provided in n traps；It is surrounded with annular polysilicon gate outside first areas p+.The present invention is compared with stand CMOS PNP transistor, as a result of annular polysilicon around the first areas p+, to completely avoid the p n+ knots that thick field oxide in the prior art is formed, total extreme is eliminated, so that the preventing total dose radiation ability of CMOS band-gap references using the present invention reachable 300krad (Si) under 50rad (Si)/s dosage rates.
Description
Technical field
The present invention relates to anti-integral dose radiation effect radiation hardened field, specially a kind of anti-integral dose radiation PNP crystal
Pipe structure.
Background technology
When device persistently by ionising radiation (such as gamma-rays and X-ray) when, will produce total extreme.Total
Under the conditions of dose, a certain number of electron-hole pairs of ionization generation in silica dioxide medium.When there is electric field action,
Accumulation forms oxide-trapped charge and heterointerface state charge in silica, to be had an impact to the performance of device.
CMOS band-gap references are widely applied modules in CMOS Analogous Integrated Electronic Circuits.Its performance is dependent on positively biased state
Pn-junction characteristic.Band-gap reference circuit is smaller and smaller with the characteristic size of CMOS technology, sensibility of the circuit to integral dose radiation
It is increasing.Main cause is that the radiation injury of PNP transistor causes reference voltage ripple.In n trap CMOS technologies, band gap base
The PNP transistor applied in standard its as shown in Figure 1.The areas n trap Zhong p+ are (identical as the source and drain of PMOS transistor) to be used as emitter
E, n trap 2 itself is used as base stage B, and p-substrate 1 is as collector C.
Referring to Fig. 1, in integral dose radiation environment, 3 trapped hole of isolation camp oxygen layer, and close to SiO2The interfaces /Si
SiO2The boundary of side accumulates, and induction forms a parasitic pn+ different from conventional pn-junction characteristic and ties, and simultaneously with main diode
Connection.Since the excess electron concentration of 3 lower section radioinduction of field oxygen layer depends on radiation intergal dose, under radiation environment, always
The I/V characteristics of diode just have sizable drift, to cause reference output voltage unstable.
Invention content
For problems of the prior art, the present invention provides a kind of anti-integral dose radiation PNP transistor structure, structure
Simply, reasonable design, preventing total dose radiation ability is strong, can completely avoid the p-n+ knots of thick field oxide formation.
The present invention is to be achieved through the following technical solutions：
A kind of anti-integral dose radiation PNP transistor structure, including p-substrate and the n traps that are arranged in p-substrate；
2nd areas p+ of setting and n traps interval in the p-substrate；
It is respectively provided with the first areas p+ and the injection regions n+ in the n traps；It is surrounded with annular outside first areas p+
Polysilicon gate.
Preferably, it is covered with grid oxide layer on p-substrate and n traps.
Further, annular polysilicon gate is arranged above grid oxide layer and corresponding first areas p+ are in around arrangement.
Preferably, the injection regions n+ and the 2nd areas p+ are arranged in a ring.
Preferably, the first areas p+ and the injection regions n+ can be isolated in the width of annular polysilicon gate.
Preferably, the thickness of annular polysilicon gate is less than 1500 Ethylmercurichlorendimides.
Preferably, annular polysilicon gate is made based on CMOS technology.
Compared with prior art, the present invention has technique effect beneficial below：
The present invention surround the first areas p+ compared with stand CMOS PNP transistor, as a result of annular polysilicon,
To completely avoid the p-n+ knots that thick field oxide in the prior art is formed, total extreme is eliminated, so that adopting
With the preventing total dose radiation ability of CMOS band-gap references of the invention up to 300krad (Si) under 50rad (Si)/s dosage rates.
Further, oxide generates oxide charge and heterointerface state charge after by ionising radiation in MOS device,
Total amount of electric charge declines with grid oxygen layer thickness at power exponent.Therefore, relatively thin gate oxide generated in irradiation defect charge also compared with
It is few, reduce total dose irradiation influence.
Further, annular polysilicon gate, which is arranged on grid oxide layer top structure, is similar to a MOS type device, and grid connect
Ground cannot be opened, but its structure eliminates total dose irradiation influence.
Further, setting can completely eliminate thick field oxide in a ring for the injection regions n+ and the 2nd areas p+, improve device
Anti- ionization total-dose radiation effect influences.
Description of the drawings
Fig. 1 is typical case N traps CMOS technology parasitic-PNP transistor sectional view in the prior art.
Fig. 2 is anti-integral dose radiation PNP transistor structure top view of the present invention.
Fig. 3 is anti-integral dose radiation PNP transistor cross-sectional view of the structure of the present invention.
Fig. 4 is N trap CMOS band-gap reference examples.
In figure：P-substrate 1, n traps 2, field oxygen layer 3, the first areas p+ 4, the 2nd areas p+ 5, the injection regions n+ 6, grid oxide layer 7, annular
Polysilicon gate 8.
Specific implementation mode
With reference to specific embodiment, the present invention is described in further detail, it is described be explanation of the invention and
It is not to limit.
The present invention provides a kind of anti-integral dose radiation PNP transistor structure, is a kind of ruggedized construction of PNP transistor,
It is based on deep-submicron CMOS process, using commercial process, is inhibited by ionising radiation total dose effect with the area cost of very little
Caused PNP transistor performance degradation improves the ability of CMOS band-gap reference anti-integral dose radiation effects.Using around the first p+
Area 4 be arranged annular polysilicon 8, to completely avoid thick field oxide formation p-n+ knot, eliminate conventional PNP transistor knot
The total extreme of structure.
As shown in Figures 2 and 3, the specific present invention includes that spaced first areas p+ 4, n+ are noted successively outward from center
Enter area 6 and the 2nd areas p+ 5；It is provided with n traps 2 on p-substrate 1, grid oxide layer 7 is covered on p-substrate 1 and n traps 2；First areas p+ 4
It is located in n traps 2 with the injection regions n+ 6, the 2nd areas p+ 5 are located in p-substrate 1, and the setting of annular polysilicon gate 8 is right on grid oxide layer 7
It is in around arrangement to answer the first areas p+ 4.As shown in Fig. 2, the structure is mutually compatible with CMOS technology.It is complete because using annular polysilicon gate 8
The full p-n+ knots for avoiding thick field oxide formation, eliminate total extreme.Total dose irradiation test result shows using this
The reference circuit of device has preferable radiation resistance.Preventing total dose radiation ability is reachable under 50rad (Si)/s dosage rates
300krad(Si)。
In order to verify the characteristic of structure of the present invention, N traps CMOS band-gap references example is as shown in figure 4, its Q1 and Q2 are adopted
Anti-integral dose radiation PNP transistor is proposed with the present invention.
Total dose irradiation test result shows there is preferable radiation resistance using the reference circuit of the device.It is anti-total
Dose delivery ability is under 50rad (Si)/s dosage rates up to 300krad (Si).
Claims (7)
1. a kind of anti-integral dose radiation PNP transistor structure, which is characterized in that including p-substrate (1) and be arranged in p-substrate
(1) the n traps (2) in；
2nd areas p+ (5) of setting and n traps (2) interval in the p-substrate (1)；
It is respectively provided with the first areas p+ (4) and the injection regions n+ (6) in the n traps (2)；First areas p+ (4) outer shroud winding
It is equipped with annular polysilicon gate (8).
2. a kind of anti-integral dose radiation PNP transistor structure according to claim 1, which is characterized in that p-substrate (1)
With grid oxide layer (7) is covered on n traps (2).
3. a kind of anti-integral dose radiation PNP transistor structure according to claim 2, which is characterized in that annular polysilicon
Grid (8) setting is above grid oxide layer (7) and corresponding first areas p+ (4) are in around arrangement.
4. a kind of anti-integral dose radiation PNP transistor structure according to claim 1, which is characterized in that the injection regions n+ (6)
It is arranged in a ring with the 2nd areas p+ (5).
5. a kind of anti-integral dose radiation PNP transistor structure according to claim 1, which is characterized in that annular polysilicon
The first areas p+ (4) and the injection regions n+ (6) can be isolated in the width of grid (8).
6. a kind of anti-integral dose radiation PNP transistor structure according to claim 1, which is characterized in that annular polysilicon
The thickness of grid (8) is less than 1500 Ethylmercurichlorendimides.
7. a kind of anti-integral dose radiation PNP transistor structure according to claim 1, which is characterized in that annular polysilicon
Grid (8) are made based on CMOS technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810168020.8A CN108447901B (en) | 2018-02-28 | 2018-02-28 | Total dose radiation resistant PNP transistor structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810168020.8A CN108447901B (en) | 2018-02-28 | 2018-02-28 | Total dose radiation resistant PNP transistor structure |
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| Publication Number | Publication Date |
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| CN108447901A true CN108447901A (en) | 2018-08-24 |
| CN108447901B CN108447901B (en) | 2021-03-23 |
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| CN201810168020.8A Active CN108447901B (en) | 2018-02-28 | 2018-02-28 | Total dose radiation resistant PNP transistor structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585531A (en) * | 2018-11-29 | 2019-04-05 | 中国电子科技集团公司第四十七研究所 | The metal-oxide-semiconductor field effect transistor of resistant to total dose effect |
| CN110828549A (en) * | 2019-11-14 | 2020-02-21 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
| CN110854179A (en) * | 2019-11-14 | 2020-02-28 | 西安微电子技术研究所 | Radiation-reinforced silicon-based bipolar transistor structure based on self-built electric field and preparation method |
| CN112366246A (en) * | 2020-11-09 | 2021-02-12 | 电子科技大学 | Radiation particle detector device structure |
| CN113410306A (en) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | Total dose radiation resistant reinforced LDMOS device structure and preparation method thereof |
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| US5869850A (en) * | 1996-12-13 | 1999-02-09 | Kabushiki Kaishia Toshiba | Lateral insulated gate bipolar transistor |
| CN1536667A (en) * | 2003-04-07 | 2004-10-13 | ������������ʽ���� | Semiconductor device |
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2018
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Patent Citations (3)
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| US5869850A (en) * | 1996-12-13 | 1999-02-09 | Kabushiki Kaishia Toshiba | Lateral insulated gate bipolar transistor |
| CN1536667A (en) * | 2003-04-07 | 2004-10-13 | ������������ʽ���� | Semiconductor device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585531A (en) * | 2018-11-29 | 2019-04-05 | 中国电子科技集团公司第四十七研究所 | The metal-oxide-semiconductor field effect transistor of resistant to total dose effect |
| CN109585531B (en) * | 2018-11-29 | 2022-03-15 | 中国电子科技集团公司第四十七研究所 | MOS field effect transistor for resisting total dose effect |
| CN110828549A (en) * | 2019-11-14 | 2020-02-21 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
| CN110854179A (en) * | 2019-11-14 | 2020-02-28 | 西安微电子技术研究所 | Radiation-reinforced silicon-based bipolar transistor structure based on self-built electric field and preparation method |
| CN110828549B (en) * | 2019-11-14 | 2022-08-16 | 西安微电子技术研究所 | Guard ring doped anti-radiation transistor structure and preparation method thereof |
| CN110854179B (en) * | 2019-11-14 | 2023-04-25 | 西安微电子技术研究所 | Radiation-reinforced silicon-based bipolar transistor structure based on self-built electric field and preparation method |
| CN112366246A (en) * | 2020-11-09 | 2021-02-12 | 电子科技大学 | Radiation particle detector device structure |
| CN113410306A (en) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | Total dose radiation resistant reinforced LDMOS device structure and preparation method thereof |
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| CN108447901B (en) | 2021-03-23 |
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