CN108411252A - 一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法 - Google Patents
一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法 Download PDFInfo
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Abstract
本发明公开了一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,该薄膜是由上下两层SrTiO3中间夹着Cu薄膜层及透明有机柔性衬底组成;先将SrTiO3和Cu靶材及衬底装入磁控溅射腔体内,靶材与衬底的距离为40~90mm;系统本底真空度抽至3.0×10‑3Pa以下,使用Ar作为溅射气体溅射SrTiO3层,沉积得到SrTiO3薄膜层,其厚度为10~200nm;再沉积得到Cu薄膜层,其厚度为3~20nm;再重复沉积得到SrTiO3薄膜层,其厚度为10~200nm;再原位70~90℃退火,制得SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜。本发明薄膜性能优良,成本低廉,适合工业化生产。
Description
技术领域
本发明属于一种以成分为特征的陶瓷组合物,尤其涉及一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜及其制备方法。
背景技术
透明导电薄膜作为透明电极被广泛应用在诸多光电器件中。其中,Sn4+掺杂的In2O3(ITO)薄膜因具有低的电阻率和高的可见光透过率等优良的光电性能,是目前最常用的透明导电薄膜材料。但是ITO中含有稀有金属铟,其资源极为匮乏、价格昂贵,需要开发出一种新的透明导电薄膜来替代ITO。特别是随着柔性电子学的发展,对柔性透明导电薄膜的需求极为迫切,而在柔性基底上制备的透明导电氧化物类薄膜的电阻率普遍在10-3Ω·cm以上,远远不能满足应用要求。亟需采用新的结构设计和制备技术来制备柔性透明导电薄膜。
SrTiO3是一种具有具有钙钛矿结构的宽带隙(~3.7eV)半导体材料,化学稳定性和热稳定性好,在电化学、电阻开关、半导体晶体管方面有着重要的应用。并且STO中不含有稀有元素,价格便宜,易于制备。超薄导电金属层也可以作为透明导电膜,但目前能应用的只有金、银和铂等电阻率低且化学稳定性好的贵金属,但金和铂成本昂贵,限制了其应用。因此本发明中选用Cu作为导电金属层制备SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜。
发明内容
本发明的目的,在于克服现有技术中电学性能的不足,利用磁控溅射沉积技术,提供一种成本低廉而性能优良的SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法。
本发明通过如下技术方案予以实现。
一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,具有如下步骤:
所述SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜是由上下两层SrTiO3中间夹着Cu薄膜层以及透明有机柔性衬底组成;
(1)将SrTiO3靶材和Cu靶材装入磁控溅射腔体内;
将透明有机柔性衬底用无水乙醇和去离子水超声洗涤,并用高纯氮气吹干,清洁干燥的Pt/Ti/SiO2/Si透明有机柔性衬底放入磁控溅射样品台上;
所述透明有机柔性衬底为聚碳酸酯衬底、聚对苯二甲酸类衬底或者聚萘二甲酸乙二醇酯衬底;
靶材与衬底的距离为40~90mm;
(2)待步骤(1)完成后,将磁控溅射系统的本底真空度抽至3.0×10-3Pa以下,使用Ar作为溅射气体溅射SrTiO3层,溅射功率为30~180W,溅射总气压0.3~15Pa,沉积得到SrTiO3薄膜层,SrTiO3薄膜层的厚度为10~200nm;
(3)步骤(2)完成后,开始溅射Cu层,溅射功率20~200W,溅射总气压为0.3~15Pa,沉积得到Cu薄膜层,Cu薄膜层的厚度为3~20nm;
(4)步骤(3)完成后,重复步骤(2),将磁控溅射系统的本底真空度抽至3.0×10-3Pa以下,使用Ar作为溅射气体溅射SrTiO3薄膜层,溅射功率为30~180W,溅射总气压0.3~15Pa,沉积得到SrTiO3薄膜层,SrTiO3薄膜层的厚度为10~200nm;
(5)溅射结束后,原位70~90℃退火2~30min,制得SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜。
所述步骤(1)的SrTiO3和Cu靶材为任意市售或者按常规工艺自制靶材,SrTiO3靶材中SrTiO3的纯度为98-99.999%,Cu靶材中Cu的纯度为99-99.9999%。
所述步骤(2)中Ar的纯度在99.99%以上。
所述步骤(2)或(4)SrTiO3薄膜层的厚度为30~60nm。
所述步骤(3)的Cu薄膜层厚度为7~13nm。
所述步骤(2)、(3)或(4)薄膜层的厚度通过调节制备工艺参数或沉积时间控制。
本发明利用磁控溅射技术制备SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜,薄膜性能优良,成本低廉,适合工业化生产。
附图说明
图1是实施例1的SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的光学透过性能(紫外-可见光谱)图谱。
具体实施方式
下面结合具体实施例进一步阐述本发明,应理解,这些实施例仅用于说明本发明而不用于限制本发明的保护范围。
实施例1
所述SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜是由上下两层SrTiO3中间夹着Cu薄膜层以及透明有机柔性衬底组成;
(1)将SrTiO3靶材与Cu靶材一起装入磁控溅射真空腔体内。
先后用无水乙醇和去离子水超声清洗聚碳酸酯衬底,并用高纯氮气吹干,放入磁控溅射腔体中,氮气纯度为99.99%。
靶材与衬底的距离为40mm~90mm。
(2)将磁控溅射系统的本底真空度抽至1.0×10-3Pa。通入高纯(99.99%)的氩气作为溅射气体,溅射总气压调节为1.0Pa,溅射功率为80W,进行沉积得到40nm厚的SrTiO3薄膜层。
(3)步骤(2)结束后,使用溅射功率为30W,溅射总气压为1Pa,进行沉积得到9nm厚的Cu薄膜层。
(4)步骤(3)结束后,重复步骤(2),使用溅射功率为80W,溅射总气压为1Pa,进行沉积得到40nm后的SrTiO3薄膜。
(5)步骤(4)结束后,在80℃下原位退火10min,制得SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜。
图1为实施例1中制备在聚碳酸酯衬底上SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜制品的光学透过性能(紫外-可见光谱)图谱,可见在可见光范围内(380nm-780nm)的平均光学透过率达75%以上。
经检测,实施例1得到的SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的方块电阻为13.1Ω/□。
实施例2~7
实施例2~7除SrTiO3与Cu薄膜层厚度之外,其它工艺步骤和工艺参数均与实施例1完全相同。检测后的各个具体实施例的导电性能详见表1。
表1
Claims (6)
1.一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,具有如下步骤:
所述SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜是由上下两层SrTiO3中间夹着Cu薄膜层以及透明有机柔性衬底组成;
(1)将SrTiO3靶材和Cu靶材装入磁控溅射腔体内;
将透明有机柔性衬底用无水乙醇和去离子水超声洗涤,并用高纯氮气吹干,清洁干燥的Pt/Ti/SiO2/Si透明有机柔性衬底放入磁控溅射样品台上;
所述透明有机柔性衬底为聚碳酸酯衬底、聚对苯二甲酸类衬底或者聚萘二甲酸乙二醇酯衬底;
靶材与衬底的距离为40~90mm;
(2)待步骤(1)完成后,将磁控溅射系统的本底真空度抽至3.0×10-3Pa以下,使用Ar作为溅射气体溅射SrTiO3薄膜层,溅射功率为30~180W,溅射总气压0.3~15Pa,沉积得到SrTiO3薄膜层,SrTiO3薄膜层的厚度为10~200nm;
(3)步骤(2)完成后,开始溅射Cu薄膜层,溅射功率20~200W,溅射总气压为0.3~15Pa,沉积得到Cu薄膜层,Cu薄膜层的厚度为3~20nm;
(4)步骤(3)完成后,重复步骤(2),将磁控溅射系统的本底真空度抽至3.0×10-3Pa以下,使用Ar作为溅射气体溅射SrTiO3薄膜层,溅射功率为30~180W,溅射总气压0.3~15Pa,沉积得到SrTiO3薄膜层,SrTiO3薄膜层的厚度为10~200nm;
(5)溅射结束后,原位70~90℃退火2~30min,制得SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜。
2.根据权利要求1所述的一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,其特征在于,所述步骤(1)的SrTiO3和Cu靶材为任意市售或者按常规工艺自制靶材,SrTiO3靶材中SrTiO3的纯度为98-99.999%,Cu靶材中Cu的纯度为99-99.9999%。
3.根据权利要求1所述的一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,其特征在于,所述步骤(2)中Ar的纯度在99.99%以上。
4.根据权利要求1所述的一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,其特征在于,所述步骤(2)或(4)SrTiO3薄膜层的厚度为30~60nm。
5.根据权利要求1所述的一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,其特征在于,所述步骤(3)的Cu薄膜层厚度为7~13nm。
6.根据权利要求1所述的一种SrTiO3/Cu/SrTiO3三明治结构的柔性透明导电薄膜的制备方法,其特征在于,所述步骤(2)、(3)或(4)薄膜层的厚度通过调节制备工艺参数或沉积时间控制。
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