CN108389938A - A kind of non-lithography preparation method of GaAs base LED chips - Google Patents
A kind of non-lithography preparation method of GaAs base LED chips Download PDFInfo
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- CN108389938A CN108389938A CN201710063966.3A CN201710063966A CN108389938A CN 108389938 A CN108389938 A CN 108389938A CN 201710063966 A CN201710063966 A CN 201710063966A CN 108389938 A CN108389938 A CN 108389938A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 238000001459 lithography Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000007740 vapor deposition Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 abstract description 9
- 238000001259 photo etching Methods 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- -1 not mercurous Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of non-lithography preparation method of GaAs base LED chips, includes the following steps：（1）Grown epitaxial layer on gaas substrates；（2）Prepare the patch for being arranged with electrode hole；（3）By step（2）The patch of preparation is attached to step（1）On the GaAs base LED epitaxial layers of preparation；（4）Au film depositions are carried out by vapor deposition on patch, the Au films at electrode hole contact to form P electrode with epitaxial layer；（5）Patch is removed and made annealing treatment, P electrode is obtained；（6）To GaAs substrate thinnings and growth N electrode.This method passes through patch of the design with electrode hole; the patch and GaAs base LED epitaxial wafers are sticked together into preparation P electrode; electrode is directly carried out without photoetching to be deposited to obtain P electrode; avoid optical graving in the prior art for GaAs base LED chips P electrode caused by chemical attack or photoresist electrode size fluctuation problem; avoid photoelectric parameter fluctuation; production efficiency is improved, simple flow is suitble to large-scale production.
Description
Technical field
The present invention relates to a kind of preparation methods of the GaAs base LED chips without photoetching, belong to photoelectron technical field.
Background technology
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as long lifespan, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential for substituting conventional illumination sources for novel illumination light source.
The fifties in last century is that many of representative well-known grind in IBM Thomas J.Watson Research Center
Under the effort for studying carefully mechanism, emerge rapidly in semiconductor light emitting field by III-V race's semiconductors of representative of GaAs.Later with gold
The appearance of organic chemical vapor deposition (MOCVD) technology of category so that the growth of the III-V races semiconductor of high quality breaches skill
The semiconductor light emitting diode device of art barrier, various wavelength floods the market in succession.Due to semiconductor light-emitting-diode relative to
Current luminescent device has efficient, long lifespan, resists the speciality such as strong mechanical shock, is worldwide counted as photograph of new generation
Funerary objects part.But due to the generally higher (GaP of refractive index of III-V races semiconductor：3.2), this results in the light-emitting zone of LED to send out
The light gone out is limited by interface total reflection phenomenon when being emitted in air through chip surface, and only extremely least a portion of light can be emitted
To device exterior (GaP is about 2.4%).Interface total reflection phenomenon causes the external quantum efficiency of LED low, is to restrict LED to substitute
The main reason for existing illuminating device.
The preparation of GaAs base LED chip P electrodes is existing generally to be prepared using wet etching method, and the preparation of wet etching method exists easily to go out
Show electrode lateral erosion and electrode pattern size will appear certain fluctuation, P electrode size is unstable to lead to different location light extraction efficiency
Difference is larger, and the test that need to carry out large area confirms related photoelectric parameter.
Disclosed in Chinese patent literature CN 105006507A《The preparation side of P electrode on GaAs base light emitting diode chips
Method》, it is to coat negative photoresist on GaAs base epitaxial wafer GaP rough surfaces, then carries out photoetching, retains negativity light on surface
The electrode pattern of photoresist, then last layer Au films are deposited on GaAs base epitaxial wafers surface, then by the metal-stripping other than electrode pattern
Fall, P electrode is obtained on GaAs base light emitting diode chips, the method solves the problems, such as the easy lateral erosion of wet etching, but it makes
Causing cost increase and negtive photoresist stripping to increase with negtive photoresist stripping, step influences the efficiency of batch production, electrode size also has
Certain fluctuation.
Disclosed in Chinese patent literature CN102332509A《A kind of side of p-electrode using chemically plating for LED chip
Method》, spaced nano-metal particle is prepared in the p-GaN layer of LED epitaxial wafer, and etch the p-GaN layer so that the p-
GaN layer surface is nanostructure；The active region of the LED epitaxial wafer is plated into activation liquid using mask, with to the LED extensions
Then the active region of piece removes mask into line activating；The LED epitaxial wafer is put into chemical plating fluid, by the activation
While nano-metal particle outside region dissolves, in the active region chemical plating metal of the LED epitaxial wafer, to form metal
Substrate；The metal is the metal that can induce reduction gold；The LED epitaxial wafer is put into chemical gold plating liquid, in the metal
Autodeposition gold on substrate, to obtain p-electrode.The method mainly prepares the P electrode of LED chip by the way of plated film,
And nano-metal particle easily remains in influence light extraction in rough surface, it is prepared by the electrode that cannot achieve GaAs base LED chips.
Disclosed in Chinese patent literature CN1885569《Using ITO as the Twi-lithography GaN-based LED electrode fabrication side of P electrode
Method》, it is the method that P electrode is prepared by ITO on GaN base LED, the method is primarily adapted for use in the preparation of GaN base LED electrode, because
The difference of GaN base and GaAs base LED chips, and it has also passed through Twi-lithography and has had a great impact to the production efficiency of batch.
Invention content
The problem of easily causing electrode damage for P electrode preparation process existing for existing GaAs base LED chips, the present invention carries
For a kind of preparation method for the GaAs base LED chips needing not move through photoetching, the preparation method simple flow, can obtain it is in the same size
P electrode and significantly improving production efficiency.
The non-lithography preparation method of the GaAs base LED chips of the present invention, the GaAs base LED chips include N electrode, GaAs
Substrate, epitaxial layer, P electrode, include the following steps：
(1) grown epitaxial layer on gaas substrates；
(2) patch for being arranged with electrode hole is prepared；
(3) patch prepared by step (2) is attached on the GaAs base LED epitaxial layers of step (1) preparation；
(4) Au film depositions are carried out by vapor deposition on patch, the Au films at electrode hole contact to form P electricity with epitaxial layer
Pole；
(5) patch is removed and is made annealing treatment, obtain P electrode；
(6) to GaAs substrate thinnings and growth N electrode.
Electrode hole diameter is 70-100 μm in the step (2).
Electrode hole is bellmouth in the step (2).Evaporation metal may make not to be vaporized on electrode hole in this way
On side wall, subsequently very simply patch can be taken down, patch is repeatable to be utilized and obtain the P electrode figure of more preferable stable and consistent.
The thickness of patch is 80-200 μm in the step (2).
Au films deposition is carried out at a temperature of 100-200 DEG C in the step (4).
The thickness of Au films is 1.5-3 μm in the step (4).
Annealing temperature is 450-550 DEG C in the step (5).
In the step (6), GaAs substrate thinnings and growth N electrode are as follows：
1. being 150-220 μm to GaAs substrate thinnings to thickness；
2. the Au films of 0.35-0.6 μm of the GaAs substrate backs growth thickness after being thinned are as N electrode.
The present invention prepares P electrode using the method different from traditional handicraft, designs the electrode hole with proper alignment
Patch sticks together the patch and GaAs base LED epitaxial wafers, prepares P electrode by the electrode hole on patch, is not necessarily to photoetching
It directly carries out electrode to be deposited to obtain P electrode, avoids optical graving in the prior art for the P electrode of GaAs base LED chips because of chemistry
Electrode size fluctuation problem caused by corrosion or photoresist, improves production efficiency, avoids and prepare electrode using conventional method
In the process cause the influence that electrode size fluctuation causes photoelectric parameter to fluctuate, and avoid in electrode production process to electrode table
The damage in face and electrode pattern are more easy to bonding wire, and simple flow is suitble to large-scale production.
Description of the drawings
Fig. 1 is the structural schematic diagram of GaAs base LED chips.
Fig. 2 is the sectional view of the patch with electrode hole in the present invention.
Fig. 3 is the sectional view of step in the present invention (4) deposition Au films.
In figure：1, GaAs substrates, 2, epitaxial layer, 3, P electrode, 4, N electrode, 5, patch, 6, electrode hole, 7, Au films.
Specific implementation mode
The present invention is the preparation for proceeding without photoetching to GaAs base LED chips shown in FIG. 1, the GaAs base LED chips
It is followed successively by N electrode 4, GaAs substrates 1, epitaxial layer 2 and P electrode 3 from the bottom to top.
The preparation method of GaAs base LED chips shown in Fig. 1, including step in detail below.
(1) routinely metal organic chemical vapor deposition (MOCVD) method, in 1 growing epitaxial layers 2 of GaAs substrates.
(2) preparing has the electrode hole 6 of proper alignment (interval is consistent, the periodic arrangement of the LED chip prepared on demand)
Patch 5, as shown in Fig. 2, electrode hole 6 is prepared by conventional lithographic version.The thickness of patch 5 is 80-200 μm.Patch 5 uses
Common PVC material.
Electrode hole 6 is up-small and down-big bellmouth.The diameter (upper end diameter of electrode hole 6) of electrode hole 6 is 70-
100μm.6 tapered design of electrode hole so that metal will not be vaporized on the side wall of electrode hole, can in subsequent step (3)
Very simply patch 5 to be taken down.Patch 5 repeats utilization and significantly improving production efficiency reduces various metal erosion liquid
Using LED chip manufacturing cost is reduced, simple flow is suitble to large-scale production.
(3) patch 5 of belt electrode hole 6 prepared by step (2) is attached on the GaAs bases epitaxial layer 2 of step (1) preparation,
And it is fixed on the planet carrier of evaporated device by the fixture of evaporated device.
(4) at 100-200 DEG C, the Au films 7 that a layer thickness is 1.5-3 μm are deposited on chip surface.As shown in Figure 3.
Because there are the electrode hole 6 of proper alignment, the Au films 7 at electrode hole 6 are fallen on epitaxial layer 2, P electrode 3 is formed,
The Au film vapor depositions in remaining region are on patch 5.
(5) patch 5 is removed, and made annealing treatment under the conditions of 450-550 DEG C, obtain P electrode 3 (referring to Fig. 1).
3 preparation process of P electrode uses most easy method, using the patch 5 of the electrode hole with proper alignment, adopts
It is prepared with the method for conventional metal deposition, using the patch of belt electrode hole, improves the stabilization of electrode pattern, obtained preferably
Electrode pattern of the same size and the damage for avoiding electrode surface.
(6) conventional thinned and growth N electrode 4 (referring to Fig. 1) is carried out to GaAs substrates, be as follows：
1. carrying out routine to GaAs substrates 2 to be thinned, thickness is 150-220 μm after being thinned；
2. the GaAs substrate backs after being thinned grow 0.35-0.6 μm of Au films as N electrode 4.
Claims (8)
1. a kind of non-lithography preparation method of GaAs base LED chips, characterized in that include the following steps：
(1) grown epitaxial layer on gaas substrates；
(2) patch for being arranged with electrode hole is prepared；
(3) patch prepared by step (2) is attached on the GaAs base LED epitaxial layers of step (1) preparation；
(4) Au film depositions are carried out by vapor deposition on patch, the Au films at electrode hole contact to form P electrode with epitaxial layer；
(5) patch is removed and is made annealing treatment, obtain P electrode；
(6) to GaAs substrate thinnings and growth N electrode.
2. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that in the step (2)
Electrode hole diameter is 70-100 μm.
3. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that in the step (2)
Electrode hole is bellmouth.
4. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that in the step (2)
The thickness of patch is 80-200 μm.
5. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that in the step (4)
Au films deposition is carried out at a temperature of 100-200 DEG C.
6. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that in the step (4)
The thickness of Au films is 1.5-3 μm.
7. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that in the step (5)
It is 450-550 DEG C to make annealing treatment temperature.
8. the non-lithography preparation method of GaAs base LED chips according to claim 1, characterized in that the step (6)
In, GaAs substrate thinnings and growth N electrode are as follows：
1. being 150-220 μm to GaAs substrate thinnings to thickness；
2. the Au films of 0.35-0.6 μm of the GaAs substrate backs growth thickness after being thinned are as N electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710063966.3A CN108389938B (en) | 2017-02-03 | 2017-02-03 | Non-photoetching preparation method of GaAs-based LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710063966.3A CN108389938B (en) | 2017-02-03 | 2017-02-03 | Non-photoetching preparation method of GaAs-based LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108389938A true CN108389938A (en) | 2018-08-10 |
| CN108389938B CN108389938B (en) | 2021-01-26 |
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| CN201710063966.3A Active CN108389938B (en) | 2017-02-03 | 2017-02-03 | Non-photoetching preparation method of GaAs-based LED chip |
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| Publication number | Publication date |
|---|---|
| CN108389938B (en) | 2021-01-26 |
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