CN1492519A - Method for producing light-emitting diode metal electrode and its producing device - Google Patents
Method for producing light-emitting diode metal electrode and its producing device Download PDFInfo
- Publication number
- CN1492519A CN1492519A CNA021469806A CN02146980A CN1492519A CN 1492519 A CN1492519 A CN 1492519A CN A021469806 A CNA021469806 A CN A021469806A CN 02146980 A CN02146980 A CN 02146980A CN 1492519 A CN1492519 A CN 1492519A
- Authority
- CN
- China
- Prior art keywords
- metal electrode
- emitting diode
- light emitting
- chip
- electrode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
This invention discloses a manufacturing method and device for a light emitting diode metal electrode. During processing a metal electrode, a chip is provided and cleaned, then a specially designed carrier is used to coordinate with magnetic components and magnetic blend to adhere to the chip surface further to finish a metal electrode on the chip. This invention does not use the known microimage etching or photorerist floating separation microimage process.
Description
Technical field
The present invention relates to the manufacturing technology of the metal electrode of a kind of light-emitting diode (LED), particularly about a kind of manufacture method and manufacturing installation thereof that need not adopt photoresistance etching or photoresistance to float off the light emitting diode metal electrode of (photoresist lift-off) technology.
Background technology
Light-emitting diode is a kind of two electrode terminals that have, and applies voltage between terminal, feeds minimum electric current, promptly luminant photoelectric subassembly.Because the luminescence phenomenon of light-emitting diode is not mat heating or Discharge illuminating, but it is luminous to belong to cold property, so assembly life-span is long, power consumption is little, reaction speed is fast, volume is little, be fit to volume production, has high-reliability, and the needs on the fit applications are made the assembly of minimum or array type easily, meet the product trend compact, that function is strong, reliability is high, make that the scope of application of light-emitting diode is quite wide.
General manufacturing method for LED, be to produce earlier after the III-V compound chip, on the III-V compound chip, make metal electrode again, then cut to form LED crystal particle, carry out packaging operation at last, can finish the making of light-emitting diode.The manufacture method of known metal electrode at light-emitting diode, roughly be divided into two kinds, first method is to plate layer of metal film on III-V compound chip surface earlier, continue and utilize photolithography techniques to form a patterning photoresist layer, and be shielding with this patterning photoresist layer, this metal film of etching, and then finish the making of metal electrode; Another kind method then is after being coated with one deck photoresistance on the III-V compound chip earlier and carrying out little shadow imaging, plates layer of metal film, carries out photoresistance again and floats off processing procedure, makes the metal imaging finish the making of metal electrode.
No matter be to make metal electrode with above-mentioned which kind of method, known technology all must utilize micro image etching procedure just can finish the making of electrode points, but with regard to photolithography techniques, its processing procedure is quite loaded down with trivial details and complicated, on making and have a higher degree of difficulty.
Therefore, the present invention is at above-mentioned puzzlement, proposes a kind of manufacture method and manufacturing installation thereof of new light emitting diode metal electrode, to overcome known disappearance.
Summary of the invention
Main purpose of the present invention is at manufacture method that a kind of light emitting diode metal electrode is provided and manufacturing installation thereof, and it is not use photoresistance etching or photoresistance to float off under the situation of micro-photographing process, utilizes this manufacturing installation to produce the metal electrode of light-emitting diode.
Another object of the present invention is at manufacture method that a kind of light emitting diode metal electrode is provided and manufacturing installation thereof, and it is to have processing procedure simply, fast, and can significantly reduce the advantage of metal electrode manufacturing cost.
For reaching above-mentioned purpose, the present invention provides epi-wafer earlier, and cleans it with cleaning agent; Then chip is placed a carrier, and be provided with a magnetic light shield, make the magnet assembly of carrier bottom adsorb this magnetic light shield, and fix chip simultaneously in chip; Continue and carry out metal evaporation, on chip, directly form metal electrode; After removing this magnetic light shield and carrier, carry out a heat treatment at last, can finish the making of light emitting diode metal electrode.
Another aspect of the present invention is that a kind of light emitting diode metal electrode manufacturing installation is being provided, and it is on the evaporation dish that is installed in the reative cell, and this manufacturing installation comprises a carrier in order to carries chips, and in the carrier bottom one magnet assembly is set; Other has a magnetic light shield to be arranged on the chip, makes magnet assembly adsorb this magnetic light shield, and simultaneously this chip is fixed on the carrier, with the usefulness as follow-up metal evaporation processing procedure.
Below cooperate institute's accompanying drawing to illustrate in detail by specific embodiment, when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and is reached.
Description of drawings
Fig. 1 makes the schematic flow sheet of light emitting diode metal electrode for the present invention.
Fig. 2 is the organigram of the present invention in the employed manufacturing installation of making light emitting diode metal electrode.
Fig. 3 is the enlarged diagram of the local structure of Fig. 2.
Embodiment
The present invention is manufacture method and the manufacturing installation thereof that proposes a kind of light emitting diode metal electrode, it is not use photoresistance etching or photoresistance to float off under the situation of micro-photographing process, utilize the carrier of particular design, cooperate magnet assembly and magnetic light shield to be attached at chip surface, directly carrying out metal coating, and then finish the making of metal electrode.
Fig. 1 makes the schematic flow sheet of light emitting diode metal electrode for the present invention, as shown in the figure, and at first shown in step S10, epi-wafer is provided, and before carrying out plated film, utilize cleaning agent to carry out the cleaning of chip, to remove oxide, pollutant and the metal ion of chip surface; And this cleaning agent by inorganic liquid medicine such as sulfuric acid, hydrogen peroxide, ammoniacal liquor, phosphoric acid and hydrochloric acid at least one of them with water carry out proportioning mix the institute form.
Before description of step S12, manufacturing installation used in the present invention is described earlier, please also refer to shown in Figure 2, this manufacturing installation 10 is on the evaporation dish 12 that is installed in the reative cell, and be to be provided with a plurality of manufacturing installation 10 (not shown) simultaneously on this evaporation dish 12, each manufacturing installation 10 is to comprise carrier 14, and it is made of aluminum alloy material, be to be provided with a storage tank 16 on carrier 14, the usefulness of carrying one chip 18 is provided; And below this storage tank 16 and to be positioned at these carrier 14 bottoms be to be provided with a magnet assembly 20, its material is generally the ferro-aluminum tool magnetisable materials such as magnet, SmCo magnet or oxidation magnet that stretch tight.
Other has a magnetic light shield 22, it is the soft film of stainless steel that has magnetic for, and thickness is between 10～300 microns, the preferably is 50 microns, then be provided with a plurality of contact holes 24 on magnetic light shield 22, with the usefulness as the formation metal electrode, this magnetic light shield 22 is to be sticked on this chip 18, adsorb magnetic light shield 22 with the magnet assembly 20 that utilizes carrier 14 bottoms, and then chip 18 is stably fixed in the storage tank 16 of carrier 14 and can come off easily.In addition, be to be provided with an evaporated metal source 26 in reative cell, it is to be incident on this chip 18 with near vertical angle (90 °).
Then, shown in step S12, chip 18 is placed above-mentioned carrier 14, and a magnetic light shield 22 is set on chip 18, make the magnet assembly 20 of carrier 14 bottoms adsorb this magnetic light shield 22, and then chip 18 is fixed on the carrier 14 really, chip 18 can be fixed on the evaporation dish 12.Be shielding then with this magnetic light shield 22, shown in step S14, carry out metal evaporation, utilize sputtering way such as hot evaporation or electron gun evaporation mode, make chip 18 surfaces that do not covered by metal magnetic light shield 22, the position that is contact hole 24 places directly is formed with metal electrode 28, please also refer to shown in the 3rd figure; Wherein, be to be selected from the group that gold, golden beryllium, golden germanium, golden zinc, nickel, zinc, silver, titanium, aluminium, indium and platinum are formed at the employed metal of this metal evaporation step.
After finishing the step of metal electrode 28, can shown in step S16, this magnetic light shield 22 be removed, and chip 18 is moved apart this carrier 14; Continue and heat-treat, it is to place 300～1000 ℃ boiler tube to leave standstill 5～50 minutes chip 18, makes chip 18 surfaces and metal electrode form ohmic contact, so, can go out complete metal electrode at chip manufacturing.
Owing to evaporated metal used in the present invention source is to be incident on the chip with the near vertical angle, so can form quite even and smooth metal electrode at chip.And make the evaporated metal source is incident to chip with the near vertical angle mode except reative cell is widened, also the crooked radian of evaporation dish can be diminished (being close to straight line) is so that can be incident on the chip evaporated metal source with the angle of near vertical.
Therefore, the present invention is not using photoresistance etching or photoresistance to float off under the situation of micro-photographing process, utilize this manufacturing installation to produce the metal electrode of light-emitting diode, so it is simple, quick to have processing procedure, and the advantage person that can significantly reduce the metal electrode manufacturing cost, to solve known existing these disappearances of micro image etching procedure of utilizing.
Above-described embodiment only is for technological thought of the present invention and characteristics are described, its purpose makes the personage who has the knack of this skill can understand content of the present invention and is implementing according to this, when can not with qualification claim of the present invention, promptly the equalization of doing according to disclosed spirit generally changes or modifies, and must be encompassed in the claim of the present invention.
Claims (17)
1, a kind of manufacture method of light emitting diode metal electrode is characterized in that comprising the following steps:
Epi-wafer is provided, and cleans it;
This chip is placed a carrier, and a magnetic light shield is set on this chip, adsorb this magnetic light shield with the magnet assembly that utilizes this carrier bottom, and fix this chip simultaneously;
With the magnetic light shield is shielding, carries out metal evaporation, directly forms metal electrode on this chip; And remove this magnetic light shield and this carrier.
2, the manufacture method of light emitting diode metal electrode according to claim 1 is characterized in that more can placing boiler tube to heat-treat this chip after the step that removes this magnetic light shield and carrier.
3, the manufacture method of light emitting diode metal electrode according to claim 2 is characterized in that this heat treatment step is to place 300～1000 ℃ boiler tube to leave standstill 5～50 minutes chip.
4, the manufacture method of light emitting diode metal electrode according to claim 1 is characterized in that the step of cleaning this chip is to use cleaning agent to finish cleaning step.
5, the manufacture method of light emitting diode metal electrode according to claim 4 is characterized in that this cleaning agent mixes institute by inorganic liquid medicine such as at least one sulfuric acid, hydrogen peroxide, ammoniacal liquor, phosphoric acid and hydrochloric acid and forms with water.
6, the manufacture method of light emitting diode metal electrode according to claim 1, the material that it is characterized in that this carrier are to be aluminium alloy.
7, the manufacture method of light emitting diode metal electrode according to claim 1 is characterized in that this magnetic light shield is the soft film of stainless steel that has magnetic for.
8, the manufacture method of light emitting diode metal electrode according to claim 1, the thickness that it is characterized in that this magnetic light shield are between 10～300 microns.
9, the manufacture method of light emitting diode metal electrode according to claim 1, the material that it is characterized in that this magnet assembly are the tool magnetisable materials such as magnet, SmCo magnet or oxidation magnet that stretch tight for ferro-aluminum.
10, the manufacture method of light emitting diode metal electrode according to claim 1 is characterized in that this metal evaporation step is to utilize sputtering way such as hot evaporation or electron gun evaporation mode to form this metal electrode.
11, the manufacture method of light emitting diode metal electrode according to claim 1 is characterized in that the employed metal of this metal evaporation step is to be selected from the group that gold, golden beryllium, golden germanium, golden zinc, nickel, zinc, silver, titanium, aluminium, indium and platinum are formed.
12, the manufacture method of light emitting diode metal electrode according to claim 1 is characterized in that employed evaporated metal source is to be incident on this chip with the near vertical angle in this metal evaporation step.
13, a kind of manufacturing installation that is used for the light emitting diode metal electrode of the described method of claim 1, it is on the evaporation dish that is installed in the reative cell, it is characterized in that this manufacturing installation comprises:
One carrier is can be for carrying one chip on it;
One magnet assembly is positioned at this carrier bottom; And
One magnetic light shield is arranged on this chip, adsorbs this magnetic light shield with the magnet assembly that utilizes this carrier bottom, and simultaneously this chip is fixed on the carrier.
14, the manufacturing installation of light emitting diode metal electrode according to claim 13, the material that it is characterized in that this carrier are to be aluminium alloy.
15, the manufacturing installation of light emitting diode metal electrode according to claim 13 is characterized in that this magnetic light shield is the soft film of stainless steel that has magnetic for.
16, the manufacturing installation of light emitting diode metal electrode according to claim 13, the thickness that it is characterized in that this magnetic light shield are between 10～300 microns.
17, the manufacturing installation of light emitting diode metal electrode according to claim 13, the material that it is characterized in that this magnet assembly are the tool magnetisable materials such as magnet, SmCo magnet or oxidation magnet that stretch tight for ferro-aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021469806A CN1492519A (en) | 2002-10-24 | 2002-10-24 | Method for producing light-emitting diode metal electrode and its producing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021469806A CN1492519A (en) | 2002-10-24 | 2002-10-24 | Method for producing light-emitting diode metal electrode and its producing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1492519A true CN1492519A (en) | 2004-04-28 |
Family
ID=34232910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA021469806A Pending CN1492519A (en) | 2002-10-24 | 2002-10-24 | Method for producing light-emitting diode metal electrode and its producing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1492519A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701153A (en) * | 2014-12-31 | 2015-06-10 | 国家电网公司 | Metal electrode manufacturing method and device |
| CN108389938A (en) * | 2017-02-03 | 2018-08-10 | 山东浪潮华光光电子股份有限公司 | A kind of non-lithography preparation method of GaAs base LED chips |
-
2002
- 2002-10-24 CN CNA021469806A patent/CN1492519A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701153A (en) * | 2014-12-31 | 2015-06-10 | 国家电网公司 | Metal electrode manufacturing method and device |
| CN104701153B (en) * | 2014-12-31 | 2018-03-20 | 国家电网公司 | A kind of production method for metal electrode and its device |
| CN108389938A (en) * | 2017-02-03 | 2018-08-10 | 山东浪潮华光光电子股份有限公司 | A kind of non-lithography preparation method of GaAs base LED chips |
| CN108389938B (en) * | 2017-02-03 | 2021-01-26 | 山东浪潮华光光电子股份有限公司 | Non-photoetching preparation method of GaAs-based LED chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6051116A (en) | Etching apparatus | |
| JP2674622B2 (en) | Method for passivating short circuit defects in semiconductor devices | |
| JP4955942B2 (en) | Electroplating head and operating method thereof | |
| EP2105976B1 (en) | Method and apparatus for electrophoretic deposition of a layer comprising phosphor particles of different size on a light emitting diode chip | |
| WO2020082151A1 (en) | Silicon solar cell and method for the production thereof | |
| CN101872813A (en) | Light-emitting diode chip and manufacturing method thereof | |
| CN202094166U (en) | LED chip provided with reflection-type current barrier layer | |
| US6849948B2 (en) | Contact structure and manufacturing method thereof | |
| CN1766701A (en) | Conductive structure and forming method thereof, array base palte and display panels | |
| US20100183896A1 (en) | Tin-silver bonding and method thereof | |
| CN101701348B (en) | Coarsening solution for electroplating pretreatment on surface of semiconductor N\P type cooling wafer and related electroplating pretreatment process | |
| KR20120012324A (en) | Solar cell and method of fabricating the same | |
| JP2008098639A (en) | Bump electrode provided with plated layer, and manufacturing method therefor | |
| CN1492519A (en) | Method for producing light-emitting diode metal electrode and its producing device | |
| CN201060877Y (en) | Method for producing metal electrode of luminous diode | |
| CN101064352A (en) | Method for producing multi-layer metal one-time electrode of luminous diode and its production apparatus | |
| CN105742449B (en) | The electrode preparation method of light emitting diode | |
| CN1691280A (en) | Method for manufacturing a semiconductor substrate and method for manufacturing an electro-optical device | |
| CN216054759U (en) | Miniature LED chip, display device and light-emitting device | |
| CN105118905A (en) | LED chip electrode and fabrication method thereof | |
| CN203859143U (en) | LED chip P surface thick aluminum electrode | |
| CN110993636A (en) | Method and system for transferring micro LED chips in large quantity | |
| JPH01133729A (en) | Conductive laminated film | |
| CN1779996A (en) | Laser stripped power LED chip on thermal metal deposition and production thereof | |
| CN211320053U (en) | System for transferring micro LED chips in huge amount |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: YAOFU TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHOUJI SCIENCE AND TECHNOLOGY CO., LTD. Effective date: 20041029 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20041029 Address after: Miaoli County of Taiwan Province Applicant after: Uni-light Touchtek Corporation Address before: Taiwan province Miaoli county bamboo town Keyilu No. 38 South Applicant before: Zhouji Science and Technology Co., Ltd. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |