CN105118905A - LED chip electrode and fabrication method thereof - Google Patents
LED chip electrode and fabrication method thereof Download PDFInfo
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- CN105118905A CN105118905A CN201510562473.5A CN201510562473A CN105118905A CN 105118905 A CN105118905 A CN 105118905A CN 201510562473 A CN201510562473 A CN 201510562473A CN 105118905 A CN105118905 A CN 105118905A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a fabrication method of an LED chip electrode. The fabrication method includes the following steps that: dry etching is performed on an epitaxial layer, an N type GaN layer is exposed; an indium tin oxide film conductive layer is fabricated; a chromium layer is formed through evaporation; a nickel layer is formed through evaporation; annealing treatment is performed on the nickel layer under a nitrogen atmosphere, so that the nickel layer can form uniformly-distributed spherical nickel particles on the surface of the chromium layer; with the spherical nickel particles adopted as an etching mask, the chromium layer is etched, so that nanoscale recessed rectangular pits can be formed on the surface of the chromium layer through etching; the spherical nickel particles are removed through corrosion; an aluminized layer, a titanium layer, a platinum layer and a gold layer are formed sequentially through evaporation; and glue is removed through peeling, and as a result, the LED chip electrode can be obtained. The invention also discloses an LED chip electrode; the LED chip electrode includes a chromium layer, an aluminum layer, an evaporation aluminum, a titanium layer, a platinum layer and a gold layer which are distributed sequentially from bottom to top; and nanoscale recessed rectangular pits can be formed on the surface of the chromium layer through etching. According to the LED chip electrode and the fabrication method thereof of the invention, the nanoscale lumpy structures can be formed on the surface of the chromium layer, so that the exitance of light on the surface of the chromium layer can be increased; light that is reflected into the chip by the aluminum layer and is further reflected out can be increased, and therefore, the luminous efficiency of an LED can be obviously improved.
Description
Technical field
The present invention relates to field of optoelectronic devices, specifically, relate to a kind of LED chip electrode and preparation method thereof.
Background technology
LED is a kind of solid light source, and it is the luminescent device utilizing semiconductor P-N junction to make.When forward conduction, the minority carrier in semiconductor and majority carrier compound, the energy discharged emits with the form of photon with photon or part.Semi-conductor LED illuminating has efficiently, energy-saving and environmental protection, long service life, etc. remarkable advantage, be widely used in the every field such as street lamp, display screen, room lighting, auto lamp.How improving luminous efficiency is the subject matter that LED needs to solve.
Current most of LED electrical pole all adopts the reflective electrode structure containing aluminium lamination, the aluminium lamination in electrode can by being transferred to P, the light of N electrode is reflected back chip internal, the light be reflected back toward shoots out from chip internal again, thus improves the external quantum efficiency of LED chip.Directly and GaN epitaxial layer surface contact, although can ensure the luminous efficiency of LED, there is two problems in Al layer: one is that the adhesiveness of whole electrode and GaN can be very poor, and in follow-up bonding wire, bonding process, electrode easily comes off; Two is that voltage can raise.In existing electrode structure, can design layer of metal film, such as layers of chrome between aluminium lamination and GaN epitaxial layer surface, this can ensure electrode sticking, can reduce voltage again, but this layer film can produce absorption to light, thus have impact on the luminous efficiency of LED.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of LED chip electrode, comprising step:
Dry etching equipment ICP etching comprises the epitaxial loayer of N-type GaN layer, quantum well and P type GaN layer from bottom to top successively, and form step, expose N-type GaN layer, etching depth 1-2 μm, the width of Cutting Road is between 10-25 μm;
Electron beam vacuum deposition method makes indium tin oxide films conductive layer, and film thickness is
, cavity temperature 150-350 DEG C, oxygen flow 5-15sccm, vacuum degree 3 × 10
-5-3 × 10
-7torr; The negative photoresist of coating thickness 2.5-3.0 μm, exposure, development, expose electrode district;
The layers of chrome of electron beam vacuum deposition method evaporation 10-12nm, plated film speed is
, plated film power is 0.35-0.45 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
The nickel dam of electron beam vacuum deposition method evaporation 5-10nm, plated film speed is set to
, plated film power is 0.16-0.19 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
In nitrogen atmosphere, annealing in process is carried out to described nickel dam, make nickel dam on the surface of described layers of chrome, form equally distributed spherical nickel particle, the distance between spherical nickel particle is 2.5-4nm, and nitrogen flow is 5-7L/min, temperature is 500-540 DEG C, and the time is 60-120s;
Utilize spherical nickel particle as mask, etch described layers of chrome, nanoscale concavity rectangle hole is formed in layers of chrome surface etch, the length in concavity rectangle hole is 3-8nm, at a distance of 2.5-4nm between adjacent concavity rectangle hole, the dry etching that etching adopts reactive ion etching machine or sense coupling machine to carry out, the etching gas used is BCl3, Cl2 or Ar, the concentration that BCl3 passes into is 15-22ml/min, the concentration that Cl2 passes into is the concentration that 20-30ml/min, Ar pass into is 24-33ml/min;
The solution corrosion comprising iron chloride, hydrochloric acid and water is adopted to remove spherical nickel particle;
Electron beam vacuum deposition method is evaporation aluminium lamination, titanium layer, platinum layer and layer gold successively;
Stripping is removed photoresist, and obtains LED chip electrode.
Preferably, described step adopts the solution corrosion comprising iron chloride, hydrochloric acid and water to remove spherical nickel particle, be further, adopt that mass fraction is the iron chloride of 8-15%, the hydrochloric acid of mass fraction 10-18%, all the other are that the solution corrosion of water removes spherical nickel particle, solution temperature 50-65 DEG C, reaction time 5-10min.
Preferably, described step electron beam vacuum deposition method evaporation aluminium lamination, titanium layer, platinum layer and layer gold is successively that evaporation condition is: plated film speed is further
, power is 0.30-0.45 times of its power output, and chamber pressure is 1.0 × 10
-6torr.
Preferably, described step is peeled off and is removed photoresist, be further, blue film is adopted to peel off metal, after metal-stripping is clean, again chip is put into glue-dispenser carries out ultrasonic immersion, wherein said glue-dispenser comprises 1-METHYLPYRROLIDONE that mass fraction is 99.5-99.8% and mass fraction is the water of 0.2-0.5%.
The invention also discloses a kind of LED chip electrode utilizing the manufacture method of above-mentioned LED chip electrode to make, this LED chip electrode comprises from bottom to top in turn: layers of chrome, aluminium lamination and evaporation aluminium lamination, titanium layer, platinum layer and layer gold, wherein, nanoscale concavity rectangle is had to cheat in described layers of chrome surface etch, the length in concavity rectangle hole is 3-8nm, at a distance of 2.5-4nm between adjacent concavity rectangle hole.
Compared with prior art, LED chip electrode of the present invention and preparation method thereof, reaches following effect:
The present invention makes the surface of the layers of chrome below aluminium lamination be formed nano level concavo-convex, compared with even curface, light can go out be shot out in the mode of diffuse reflection and scattering on this concavo-convex surface, increase the exitance of light on layers of chrome surface, and then increase and arrive the amount of light of aluminium lamination, like this, be reflected back chip internal by aluminium lamination and the light that again reflects away also will increase, the luminous efficiency of LED significantly improves, and electrode structure of the present invention is than conventional method brightness height 5%-6%.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the LED chip electrode structure of prior art;
Fig. 2 is LED chip electrode structure of the present invention;
Fig. 3 is the nanoscale concavity rectangle hole on layers of chrome surface of the present invention;
Fig. 4 is chip surface coating photoresist, exposes electrode district;
Fig. 5 is evaporation layers of chrome;
Fig. 6 is evaporation nickel dam;
Fig. 7 forms nickel ball after nickel dam annealing;
Fig. 8 is for mask etching forms nanoscale concavity rectangle hole on layers of chrome surface with nickel ball;
Fig. 9 is that chemical solution removes nickel ball.
Embodiment
As employed some vocabulary to censure specific components in the middle of specification and claim.Those skilled in the art should understand, and hardware manufacturer may call same assembly with different noun.This specification and claims are not used as with the difference of title the mode distinguishing assembly, but are used as the criterion of differentiation with assembly difference functionally." comprising " as mentioned in the middle of specification and claim is in the whole text an open language, therefore should be construed to " comprise but be not limited to "." roughly " refer to that in receivable error range, those skilled in the art can solve the technical problem within the scope of certain error, reach described technique effect substantially.In addition, " couple " word and comprise directly any and indirectly electric property coupling means at this.Therefore, if describe a first device in literary composition to be coupled to one second device, then represent described first device and directly can be electrically coupled to described second device, or be indirectly electrically coupled to described second device by other devices or the means that couple.Specification subsequent descriptions is for implementing better embodiment of the present invention, and right described description is to illustrate for the purpose of rule of the present invention, and is not used to limit scope of the present invention.Protection scope of the present invention is when being as the criterion depending on the claims person of defining.
Below in conjunction with accompanying drawing, the present invention is described in further detail, but not as a limitation of the invention.
Embodiment 1:
Composition graphs 2-Fig. 9, present embodiments provides a kind of manufacture method of LED chip electrode, comprises step:
Step 101: dry etching equipment ICP etching comprises the epitaxial loayer 1 of N-type GaN layer, quantum well and P type GaN layer from bottom to top successively, form step, expose N-type GaN layer, etching depth 1 μm, the width of Cutting Road is between 10 μm, P electrode is produced in P type GaN layer, and N electrode is produced in N-type GaN layer;
Step 102: electron beam vacuum deposition method makes indium tin oxide films conductive layer, and film thickness is
, cavity temperature 150 DEG C, oxygen flow 5sccm, vacuum degree 3 × 10
-5torr;
Step 103: as shown in Figure 4, the negative photoresist 5 that coating thickness is 2.5 μm, exposure, development, expose electrode district;
Step 104: as shown in Figure 5, the layers of chrome 2 of electron beam vacuum deposition method evaporation 10nm, plated film speed is
, plated film power is 0.35 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
Step 105: composition graphs 6, the nickel dam 6 of electron beam vacuum deposition method evaporation 5-10nm, plated film speed is set to
, plated film power is 0.16 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
Step 106: composition graphs 7, carries out annealing in process to described nickel dam 6 in nitrogen atmosphere, makes nickel dam 6 on the surface of described layers of chrome 2, form equally distributed spherical nickel particle 61, distance between spherical nickel particle 61 is 2.5nm, nitrogen flow is 5L/min, and temperature is 500 DEG C, and the time is 60s;
Step 107: as shown in Figure 8, utilize spherical nickel particle 61 as mask, etch described layers of chrome 2, nanoscale concavity rectangle hole is formed in layers of chrome 2 surface etch, long a, wide b, the high h in concavity rectangle hole are 3nm, at a distance of 2.5nm between adjacent concavity rectangle hole, the dry etching that etching adopts reactive ion etching machine or sense coupling machine to carry out, the etching gas used is BCl3, Cl2 or Ar, the concentration that BCl3 passes into is 15ml/min, the concentration that Cl2 passes into is the concentration that 20ml/min, Ar pass into is 24ml/min;
Step 108: adopt the solution corrosion comprising iron chloride, hydrochloric acid and water to remove spherical nickel particle 61; As shown in Figure 9, adopt mass fraction be 8% iron chloride, mass fraction 10% hydrochloric acid, all the other are that the solution corrosion of water removes spherical nickel particle 61, solution temperature 50 DEG C, reaction time 5min.
Step 109: electron beam vacuum deposition method 4 represents titanium layer, platinum layer and layer gold in evaporation aluminium lamination 3 and titanium layer, platinum layer and layer gold Fig. 2 successively; Evaporation condition is: plated film speed is
, plated film power is 0.30 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr.
Step 110: peel off and remove photoresist, obtain LED chip electrode.Adopt blue film to peel off metal, after metal-stripping is clean, again chip is put into glue-dispenser carries out ultrasonic immersion, wherein said glue-dispenser comprise mass fraction be 99.5% 1-METHYLPYRROLIDONE and mass fraction be the water of 0.2%.
According to the LED chip electrode that said method makes, as shown in Figure 2, this LED chip electrode comprises from bottom to top in turn: layers of chrome 2, aluminium lamination 3 and titanium layer, platinum layer and layer gold, as shown in Figure 3, nanoscale concavity rectangle is had to cheat in described layers of chrome 2 surface etch, the length in concavity rectangle hole is 3nm, at a distance of 2.5nm between adjacent concavity rectangle hole.
Embodiment 2:
Composition graphs 2-Fig. 9, present embodiments provides a kind of manufacture method of LED chip electrode, comprises step:
Step 201: dry etching equipment ICP etching comprises the epitaxial loayer 1 of N-type GaN layer, quantum well and P type GaN layer from bottom to top successively, form step, expose N-type GaN layer, etching depth 2 μm, the width of Cutting Road is between 25 μm, P electrode is produced in P type GaN layer, and N electrode is produced in N-type GaN layer;
Step 202: electron beam vacuum deposition method makes indium tin oxide films conductive layer, and film thickness is
, cavity temperature 350 DEG C, oxygen flow 15sccm, vacuum degree 3 × 10
-7torr;
Step 203: as shown in Figure 4, the negative photoresist 5 that coating thickness is 3.0 μm, exposure, development, expose electrode district;
Step 204: as shown in Figure 5, the layers of chrome 2 of electron beam vacuum deposition method evaporation 12nm, plated film speed is
, plated film power is 0.45 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
Step 205: composition graphs 6, the nickel dam 6 of electron beam vacuum deposition method evaporation 10nm, plated film speed is set to
, plated film power is 0.19 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
Step 206: composition graphs 7, carries out annealing in process to described nickel dam 6 in nitrogen atmosphere, makes nickel dam 6 on the surface of described layers of chrome 2, form equally distributed spherical nickel particle 61, distance between spherical nickel particle 61 is 4nm, nitrogen flow is 7L/min, and temperature is 540 DEG C, and the time is 120s;
Step 207: as shown in Figure 8, utilize spherical nickel particle 61 as mask, etch described layers of chrome 2, nanoscale concavity rectangle hole is formed in layers of chrome 2 surface etch, long a, wide b, the high h in concavity rectangle hole are 8nm, at a distance of 4nm between adjacent concavity rectangle hole, the dry etching that etching adopts reactive ion etching machine or sense coupling machine to carry out, the etching gas used is BCl3, Cl2 or Ar, the concentration that BCl3 passes into is 22ml/min, the concentration that Cl2 passes into is the concentration that 30ml/min, Ar pass into is 33ml/min;
Step 208: adopt the solution corrosion comprising iron chloride, hydrochloric acid and water to remove spherical nickel particle 61; As shown in Figure 9, adopt mass fraction be 15% iron chloride, mass fraction 18% hydrochloric acid, all the other are that the solution corrosion of water removes spherical nickel particle 61, solution temperature 65 DEG C, reaction time 10min.
Step 209: electron beam vacuum deposition method 4 represents titanium layer, platinum layer and layer gold in evaporation aluminium lamination 3 and titanium layer, platinum layer and layer gold Fig. 2 successively; Evaporation condition is: plated film speed is
, plated film power is 0.45 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr.
Step 210: peel off and remove photoresist, obtain LED chip electrode.Adopt blue film to peel off metal, after metal-stripping is clean, again chip is put into glue-dispenser carries out ultrasonic immersion, wherein said glue-dispenser comprise mass fraction be 99.8% 1-METHYLPYRROLIDONE and mass fraction be the water of 0.5%.
According to the LED chip electrode that said method makes, as shown in Figure 2, this LED chip electrode comprises from bottom to top in turn: layers of chrome 2, aluminium lamination 3 and titanium layer, platinum layer and layer gold, as shown in Figure 3, nanoscale concavity rectangle is had to cheat in described layers of chrome 2 surface etch, the length in concavity rectangle hole is 8nm, at a distance of 4nm between adjacent concavity rectangle hole.
Embodiment 3:
Composition graphs 2-Fig. 9, present embodiments provides a kind of manufacture method of LED chip electrode, comprises step:
Step 301: dry etching equipment ICP etching comprises the epitaxial loayer 1 of N-type GaN layer, quantum well and P type GaN layer from bottom to top successively, form step, expose N-type GaN layer, etching depth 1.5 μm, the width of Cutting Road is between 17 μm, P electrode is produced in P type GaN layer, and N electrode is produced in N-type GaN layer;
Step 302: electron beam vacuum deposition method makes indium tin oxide films conductive layer, and film thickness is
cavity temperature 250 DEG C, oxygen flow 10sccm, vacuum degree 5.05 × 10
-6torr;
Step 303: as shown in Figure 4, the negative photoresist 5 that coating thickness is 2.7 μm, exposure, development, expose electrode district;
Step 304: as shown in Figure 5, the layers of chrome 2 of electron beam vacuum deposition method evaporation 11nm, plated film speed is
, plated film power is 0.4 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
Step 305: composition graphs 6, the nickel dam 6 of electron beam vacuum deposition method evaporation 7nm, plated film speed is set to
, plated film power is 0.17 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
Step 306: composition graphs 7, carries out annealing in process to described nickel dam 6 in nitrogen atmosphere, makes nickel dam 6 on the surface of described layers of chrome 2, form equally distributed spherical nickel particle 61, distance between spherical nickel particle 61 is 3.2nm, nitrogen flow is 6L/min, and temperature is 520 DEG C, and the time is 90s;
Step 307: as shown in Figure 8, utilize spherical nickel particle 61 as mask, etch described layers of chrome 2, nanoscale concavity rectangle hole is formed in layers of chrome 2 surface etch, long a, wide b, the high h in concavity rectangle hole are 5nm, at a distance of 3.2nm between adjacent concavity rectangle hole, the dry etching that etching adopts reactive ion etching machine or sense coupling machine to carry out, the etching gas used is BCl3, Cl2 or Ar, the concentration that BCl3 passes into is 18ml/min, the concentration that Cl2 passes into is the concentration that 25ml/min, Ar pass into is 28ml/min;
Step 308: adopt the solution corrosion comprising iron chloride, hydrochloric acid and water to remove spherical nickel particle 61; As shown in Figure 9, adopt mass fraction be 11% iron chloride, mass fraction 14% hydrochloric acid, all the other are that the solution corrosion of water removes spherical nickel particle 61, solution temperature 60 DEG C, reaction time 7min.
Step 309: electron beam vacuum deposition method is evaporation aluminium lamination 3 and titanium layer, platinum layer and layer gold successively, in Fig. 2,4 represent titanium layer, platinum layer and layer gold; Evaporation condition is: plated film speed is
, plated film power is 0.35 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr.
Step 310: peel off and remove photoresist, obtain LED chip electrode.Adopt blue film to peel off metal, after metal-stripping is clean, again chip is put into glue-dispenser carries out ultrasonic immersion, wherein said glue-dispenser comprise mass fraction be 99.6% 1-METHYLPYRROLIDONE and mass fraction be the water of 0.35%.
According to the LED chip electrode that said method makes, as shown in Figure 2, this LED chip electrode comprises from bottom to top in turn: layers of chrome 2, aluminium lamination 3 and and titanium layer, platinum layer and layer gold, as shown in Figure 3, nanoscale concavity rectangle is had to cheat in described layers of chrome 2 surface etch, the length in concavity rectangle hole is 5nm, at a distance of 3.2nm between adjacent concavity rectangle hole.
Contrast experiment:
1) conventional method etching N, P table top; Dry etching equipment ICP etching comprises the epitaxial loayer 1 of N-type GaN layer, quantum well and P type GaN layer from bottom to top successively, and form step, expose N-type GaN layer, etching depth 1-2 μm, the width of Cutting Road is between 10-25 μm.
2) conventional method makes transparency conducting layer; Electron beam vacuum deposition method makes indium tin oxide films conductive layer; Film thickness
, cavity temperature 150-350 DEG C, oxygen flow 5-15sccm, vacuum degree 10
-5-10
-7torr.
3) conventional method does photoetching, exposes electrode district; The negative photoresist of coating 2.5-3.0 micron, exposure, development, expose electrode district
4) electron beam vacuum deposition method evaporation layers of chrome, aluminium lamination and other each layer metal successively.During evaporation, chamber pressure is 1.0 × 10
-6torr, evaporation layers of chrome, aluminium lamination and titanium layer, platinum layer and layer gold time plated film speed be 4.5-10 dust/second, plated film power be the 0.30-0.45 of electron gun power output doubly,
5) stripping is removed photoresist.Adopt blue film to peel off metal, chip is put into glue-dispenser again and carry out ultrasonic immersion after metal-stripping is clean, wherein said glue-dispenser comprises 1-METHYLPYRROLIDONE that mass fraction is 99.5-99.8% and mass fraction is the water of 0.2-0.5%.Obtain the LED shown in Fig. 1 and electrode thereof.
Compared with prior art, LED chip electrode of the present invention and preparation method thereof, reaches following effect:
The present invention makes the surface of the layers of chrome below aluminium lamination be formed nano level concavo-convex, compared with even curface, light can go out be shot out in the mode of diffuse reflection and scattering on this concavo-convex surface, increase the exitance of light on layers of chrome surface, and then increase and arrive the amount of light of aluminium lamination, like this, be reflected back chip internal by aluminium lamination and the light that again reflects away also will increase, the luminous efficiency of LED significantly improves, and electrode structure of the present invention is than conventional method brightness height 5%-6%.
Above-mentioned explanation illustrate and describes some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection range of claims of the present invention.
Claims (5)
1. a manufacture method for LED chip electrode, is characterized in that, comprises step:
Dry etching equipment ICP etching comprises the epitaxial loayer of N-type GaN layer, quantum well and P type GaN layer from bottom to top successively, and form step, expose N-type GaN layer, etching depth 1-2 μm, the width of Cutting Road is between 10-25 μm;
Electron beam vacuum deposition method makes indium tin oxide films conductive layer, and film thickness is
cavity temperature 150-350 DEG C, oxygen flow 5-15sccm, vacuum degree 3 × 10
-5-3 × 10
-7torr; The negative photoresist of coating thickness 2.5-3.0 μm, exposure, development, expose electrode district;
The layers of chrome of electron beam vacuum deposition method evaporation 10-12nm, plated film speed is
plated film power is 0.35-0.45 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
The nickel dam of electron beam vacuum deposition method evaporation 5-10nm, plated film speed is set to
plated film power is 0.16-0.19 times of electron gun power output, and chamber pressure is 1.0 × 10
-6torr;
In nitrogen atmosphere, annealing in process is carried out to described nickel dam, make nickel dam on the surface of described layers of chrome, form equally distributed spherical nickel particle, the distance between spherical nickel particle is 2.5-4nm, and nitrogen flow is 5-7L/min, temperature is 500-540 DEG C, and the time is 60-120s;
Utilize spherical nickel particle as mask, etch described layers of chrome, nanoscale concavity rectangle hole is formed in layers of chrome surface etch, the length in concavity rectangle hole is 3-8nm, at a distance of 2.5-4nm between adjacent concavity rectangle hole, the dry etching that etching adopts reactive ion etching machine or sense coupling machine to carry out, the etching gas used is BCl3, Cl2 or Ar, the concentration that BCl3 passes into is 15-22ml/min, the concentration that Cl2 passes into is the concentration that 20-30ml/min, Ar pass into is 24-33ml/min;
The solution corrosion comprising iron chloride, hydrochloric acid and water is adopted to remove spherical nickel particle;
Electron beam vacuum deposition method is evaporation aluminium lamination, titanium layer, platinum layer and layer gold successively;
Stripping is removed photoresist, and obtains LED chip electrode.
2. the manufacture method of LED chip electrode according to claim 1, it is characterized in that, described step adopts the solution corrosion comprising iron chloride, hydrochloric acid and water to remove spherical nickel particle, be further, adopt that mass fraction is the iron chloride of 8-15%, the hydrochloric acid of mass fraction 10-18%, all the other are that the solution corrosion of water removes spherical nickel particle, solution temperature 50-65 DEG C, reaction time 5-10min.
3. the manufacture method of LED chip electrode according to claim 1, is characterized in that, described step electron beam vacuum deposition method evaporation aluminium lamination, titanium layer, platinum layer and layer gold is successively that evaporation condition is: plated film speed is further
power is 0.30-0.45 times of its power output, and chamber pressure is 1.0 × 10
-6torr.
4. the manufacture method of LED chip electrode according to claim 1, it is characterized in that, described step is peeled off and is removed photoresist, be further, blue film is adopted to peel off metal, after metal-stripping is clean, again chip is put into glue-dispenser carries out ultrasonic immersion, wherein said glue-dispenser comprises 1-METHYLPYRROLIDONE that mass fraction is 99.5-99.8% and mass fraction is the water of 0.2-0.5%.
5. according to the LED chip electrode that the manufacture method of described LED chip electrode arbitrary in Claims 1-4 makes, it is characterized in that, this LED chip electrode comprises from bottom to top in turn: layers of chrome, aluminium lamination and evaporation aluminium lamination, titanium layer, platinum layer and layer gold, wherein, nanoscale concavity rectangle is had to cheat in described layers of chrome surface etch, the length in concavity rectangle hole is 3-8nm, at a distance of 2.5-4nm between adjacent concavity rectangle hole.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789403A (en) * | 2016-05-17 | 2016-07-20 | 湘能华磊光电股份有限公司 | Transparent conducting layer manufacturing method for increasing light emitting diode chip brightness |
| CN106876548A (en) * | 2017-02-24 | 2017-06-20 | 湘能华磊光电股份有限公司 | LED reflection electrode and preparation method thereof |
| CN111591953A (en) * | 2020-05-07 | 2020-08-28 | 南京航空航天大学 | Needle-shaped microelectrode and preparation method thereof |
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| CN106876548B (en) * | 2017-02-24 | 2019-05-31 | 湘能华磊光电股份有限公司 | LED reflection electrode and preparation method thereof |
| CN111591953A (en) * | 2020-05-07 | 2020-08-28 | 南京航空航天大学 | Needle-shaped microelectrode and preparation method thereof |
| CN111591953B (en) * | 2020-05-07 | 2022-08-05 | 南京航空航天大学 | Needle-shaped microelectrode and preparation method thereof |
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