CN108380994A - The method for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration - Google Patents
The method for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration Download PDFInfo
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- CN108380994A CN108380994A CN201810103345.8A CN201810103345A CN108380994A CN 108380994 A CN108380994 A CN 108380994A CN 201810103345 A CN201810103345 A CN 201810103345A CN 108380994 A CN108380994 A CN 108380994A
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- solder joint
- remelting
- preparing
- vibration
- polycrystalline structure
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The method for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, belong to material preparation and connection area, suitable for preparing the unleaded interconnection solder joint being orientated with polycrystalline, the solder joint polycrystalline ratio of making reaches 100%, can significantly improve the service reliability of unleaded interconnection solder joint.The advantage of the invention is that the unleaded interconnection solder joint of various structures can be prepared, such as docking, overlap joint and ball grid array (Ball Grid Array, BGA) solder joint encapsulating structure etc., the unleaded interconnection solder joint ensured has polycrystalline structure；Simple process and low cost is honest and clean, is no different with traditional solder joint preparation process other than applying vibration in remelting preparation process；The unleaded interconnection solder joint obtained simultaneously disclosure satisfy that the demand of practical application.
Description
Technical field
The present invention is the method for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, belongs to material preparation and connect
Field is suitable for preparing the unleaded interconnection solder joint being orientated with polycrystalline, and the military service that can significantly improve unleaded interconnection solder joint is reliable
Property.
Background technology
Solder joint plays the effects that mechanical connection and electric signal transmission in microelectronic component, be microelectronics Packaging can not or
Scarce component part.Nowadays, on the one hand, microelectronic component constantly develops to micro-, light, thin and multifunction direction；On the other hand,
Encapsulated space reduces, and current density increases, and chip heat production increases, and the working environment residing for solder joint becomes unprecedented harshness.
Moreover, because the variation of environment temperature and frequently switching on for power supply, the greatest differences of coefficient of thermal expansion are led between different encapsulating materials
The ess-strain that solder joint is born is caused to further increase.Therefore, solder joint becomes the weak link in electronic device, electronic device
Reliability and service life depend greatly on the reliability of solder joint.
Isotropism is often presented in traditional SnPb eutectic solder solder joints, and this is mainly due to Sn and Pb two-phases to weld in SnPb
Distribution in point is relatively uniform, but Pb is toxic, and european union directive has been banned from use, therefore lead-free brazing obtains in recent years
Development.However, different from SnPb solder joints, unleaded interconnection solder joint shows strong anisotropy, this is because unleaded interconnection
Solder joint is usually made of monocrystalline or limited a β-Sn crystal grain, and β-Sn have the crystal structure of body-centered tetragonal, lattice constant a
=b=0.5632, c=0.3182, c/a=0.546 has strong anisotropy.Therefore, unleaded interconnection weldering can be seriously affected
The reliability of point, the crystal orientation of each crystal grain and its reliability are closely related in solder joint.For example, in Thermal Cycling
In, if plane where the c-axis of β-Sn crystal grain and pad is close to parallel, the CTE mistakes between solder and bonding pad material in solder joint
With larger, the interconnection solder joint with this crystal orientation will be easier fail；For another example, in electrotransport process, weldering
The diffusion rate of atom is influenced by β-Sn crystal grain in point, and atom will be apparently higher than along the c-axis diffusion rate of β-Sn crystal grain along a
Axis or b axis will be easier to fail with plane where pad with c-axis close to the solder joint that vertical crystal is orientated.Therefore, exist
Polycrystalline structure is formed inside Lead-Free Solder Joint, makes it that isotropism be presented, and has very important meaning to the reliability of the company's of raising solder joint
Justice.
The present invention applies the preparation method of vibration during welding spot remelting using butt welding point, has successfully been prepared unleaded
Polycrystalline solder joint, this is because under the action of vibration, during welding spot remelting, internal forming core core increases, cooled and solidified
A variety of crystal orientations are formd inside solder joint afterwards.Inventor is tested by subsequent welding spot reliability and is found, polycrystalline solder joint tool
There are more excellent service reliability, including electromigration reliability and heat fatigue reliability etc., achieves the SnPb of beyond tradition
The superior in reliability of solder, this is because the mechanical performance of SnAgCu lead-free brazings is excellent compared with SnPb solders, meanwhile, both have
There is the polycrystalline welding spot structure haveing excellent performance, therefore, military service of the polycrystalline SnAgCu leadless solder welding spots compared with SnPb solder polycrystalline solder joints
Reliability significantly improves.
Invention content
The purpose of the present invention is be significantly lower than polycrystalline structure solder joint for Lead-Free Solder Joint monocrystalline or twin structure reliability
Feature prepares the unleaded interconnection solder joint with polycrystalline structure.The synthesis service reliability of polycrystalline structure solder joint is more excellent, than
Such as, the solder joint with a certain kind orientation is with excellent electromigration reliability, and the solder joint with another kind orientation is with excellent
Heat fatigue reliability, and the heat fatigue of polycrystalline solder joint or electromigration reliability fall between, and with uniformity.For
One encapsulating structure, the number of solder joint is up to hundreds and thousands of, and the failure of any one solder joint can all cause the entirety of encapsulating structure
Failure, at this point, the polycrystalline solder joint identical service condition lower service life it is consistent advantage it is more prominent, while there is polycrystalline structure solder joint
Assembly life-span prediction is more consistent and accurate, it is seen then that the unleaded interconnection solder joint of polycrystalline structure prepared by the present invention can significantly improve
The comprehensive performance and service reliability of solder joint.
In order to achieve the above object, present invention employs following technical solutions.
The method for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, welding spot structure are divided into docking, overlap joint and BGA
Package assembling etc., specifically includes following steps：
(1), the making of pad or chip is carried out according to actual needs, and is purged oxide and the pollution of bond pad surface
Object；It such as uses aqueous solution of nitric acid to remove the oxide on the surfaces such as pad, the surfaces such as pad is removed using acetone or alcohol etc.
Pollutant；
(2), when making docking or ovelapping spot weld, prepare solder, prepare for the remelting preparation of follow-up polycrystalline structure solder joint；
When making ball grid array (Ball Grid Array, BGA) solder joint encapsulating structure, then need first to prepare solder
At solder ball, then uses remelting processing rework profile to carry out solder ball and connect with the remelting of pad or chip, be cooled to room
Temperature is prepared for the follow-up remelting preparation with polycrystalline structure solder joint package assembling；
(3), it makes docking or when ovelapping spot weld, soldering paste is applied between two pads, using remelting processing rework profile,
And butt welding point applies vibration during welding spot remelting, and prepared by the remelting for carrying out solder joint, be cooled to room temperature, and it is corresponding right to obtain
It connects or ovelapping spot weld；
When preparing bga structure, pad with salient point will be prepared or chip passes through remelting processing and returns
Flow curve is welded on hollow piece or missing solder disk, and is applied to encapsulating structure during welding spot remelting and vibrated, and solder joint is carried out
Remelting prepare, be cooled to room temperature, obtain corresponding BGA solder joints；
The pad is selected from Cu, Cu/Ni/Au, Cu/Cu6Sn5；
The solder is bianry alloy SnCu series, SnAg series, SnZn series, SnBi is serial or SnIn is serial, or
Ternary alloy three-partalloy SnAgCu series, SnAgBi series or SnAgIn series or quaternary SnAgBiIn series leadless solders.
Vibration mode in the step (3) is mechanical vibration, electric-liquid type vibration, electrodynamic type vibration, and vibration frequency is
10Hz-10KHz。
Vibration in the step (3) applies dwell time after solder joint cooled and solidified process start time；
Remelting in the step (2) and (3), temperature range select 200 DEG C to 700 DEG C；
Cooling in the step (2) and (3) selects the type of cooling of furnace cooling, air-cooled, air-cooled, water cooling or oil cooling.
The unleaded interconnection solder joint prepared is inlayed, ground and polished, to obtain electron backscatter diffraction
(Electron Backscattered Diffraction, EBSD) data, and analyze data.
The advantage of the invention is that the unleaded interconnection solder joint of various structures can be prepared, such as docking, overlap joint and BGA solder joints envelope
Assembling structure etc., the unleaded interconnection solder joint ensured have polycrystalline structure, and solder joint polycrystalline ratio reaches 100%；It is simple for process, at
This is cheap, is no different with traditional solder joint preparation process other than applying vibration in remelting preparation process；The nothing obtained simultaneously
Lead interconnection solder joint disclosure satisfy that the demand of practical application.
Description of the drawings
Fig. 1：Picture with the linear solder joint of Cu pads；
Fig. 2：The EBSD data of the linear solder joint of Sn3.5Ag solders of mono-crystalline structures are presented；
(a) EBSD distribution of orientations figure；(b) crystal boundary distribution map；(c) (001) and (100) pole figure；(d) misorientation distribution map
Fig. 3：The EBSD data of the linear solder joint of Sn3.5Ag solders of twin structure are presented；
(a) EBSD distribution of orientations figure；(b) crystal boundary distribution map；(c) (001) and (100) pole figure；(d) misorientation distribution map
Fig. 4：Apply vibration in remelting preparation process, the linear solder joint of Sn3.5Ag solders of polycrystalline structure is presented after cooling
EBSD data；
(a) EBSD distribution of orientations figure；(b) crystal boundary distribution map；(c) (001) and (100) pole figure；(d) misorientation distribution map
Fig. 5：The EBSD data of the linear solder joint of Sn3.0Ag3.0Bi3.0In solders with polycrystalline structure；
(a) EBSD distribution of orientations figure；(b) crystal boundary distribution map；(c) (001) and (100) pole figure；(d) misorientation distribution map
Fig. 6：The electromigration SEM figures of the linear solder joint of Sn3.0Ag3.0Bi3.0In solders with polycrystalline structure shown in Fig. 5
Piece；
(a)0h；(b)168h；(c)336h；(d)504h
Fig. 7：The linear solder joint electromigration condition lower bound of Sn3.0Ag3.0Bi3.0In solders with polycrystalline structure shown in Fig. 5
Face intermetallic compound thickness situation of change；
Fig. 8：The EBSD data of the linear solder joint of Sn3.0Ag3.0Bi3.0In solders with mono-crystalline structures；
(a) EBSD distribution of orientations figure；(b) (001) and (100) pole figure；(c) misorientation distribution map
Fig. 9：The electromigration SEM figures of the linear solder joint of Sn3.0Ag3.0Bi3.0In solders with mono-crystalline structures shown in Fig. 8
Piece；
(a)0h；(b)168h；(c)336h；(d)504h
Figure 10：The linear solder joint electromigration condition lower bound of Sn3.0Ag3.0Bi3.0In solders with mono-crystalline structures shown in Fig. 8
Face intermetallic compound thickness situation of change.
Specific embodiment
The invention will be further described in conjunction with the embodiments for the following contents, but the present invention is not limited to following embodiments.
Embodiment 1：Fig. 1 and 4 is specifically described embodiments of the present invention, and illustrates polycrystalline in conjunction with Fig. 5,6,7,8,9 and 10
The electromigration reliability of welding spot structure is better than monocrystalline solder joint.
Sectional dimension is 400 μm of 400 μ m, and thickness is 300 μm, and Cu/Sn3.5Ag (wt.%)/Cu of polycrystalline structure is presented
The making of linear solder joint.
1, copper pad use Manufacture by line cutting, size be 400 μ m 400 μ m 10mm, purity 99.99wt.%,
Pad is put into the HNO that prepared volume fraction is 30%330s is impregnated in aqueous solution, to remove the oxide on its surface, so
Pad acetone soln immersion 60s is put into afterwards to be then dried for standby to remove the pollutant on its surface；
2, by sticking double faced adhesive tape on printed circuit board (Printed circuit boards, PCB), the size of PCB is
10mm × 10mm × 2mm, material FR-4, will copper pad to be welded adherency on double faced adhesive tape, ensure that pad is parallel to each other and spacing
It is 300 μm；
3, the Sn3.5Ag soldering paste that solder is provided using Japanese Senju Metal Industry Co., Ltd, before Sn3.5Ag solder pastes
Refrigerator is deposited in, needs take out and be sufficiently stirred from refrigerator before use within 2 hours in advance, to restore its viscosity and activity,
Using cotton swab by solder paste coated between two copper pads；
4, by using specified remelting processing rework profile (245 DEG C of remelting temperature simultaneously keeps 60s at 217 DEG C or more),
And vibration (entire pad is placed on shake table) is applied using mechanical vibration generator system butt welding point in reflow process, vibration frequency is
20Hz, air-cooled solidification stop applying vibration, obtain linear solder joint, wherein mechanical vibration equipment is that Shenzhen heroes are limited up to science and technology
The mechanical vibration generator system (VS-5060L) of company, hot wind remelting device are the Rework workbench (ST- of PACE companies of the U.S.
325)；
5, linear solder joint is put into acetone soln together with pcb board, linear solder joint is removed, the linear solder joint that Fig. 1 is
Then picture specifies cross section to be ground and polish it, the crystal grain that docking solder joint is observed by EBSD is orientated, EBSD numbers
According to as shown in Figure 4, it is seen then that remelting, which prepares solder joint, under effect of vibration has polycrystalline structure；
6, Cu/Sn3.0Ag3.0Bi3.0In/Cu banjo fixing butt jointings prepared by remelting shown in fig. 5 have polycrystalline structure, by it
It is placed in 1 × 104A/cm2Current density under carry out electromigration experiment, Fig. 6 and Fig. 7 are respectively to have polycrystalline structure shown in Fig. 5
Compound is thick between interface metal under the conditions of the electromigration SEM pictures of the linear solder joint of Sn3.0Ag3.0Bi3.0In solders and electromigration
Spend situation of change；Fig. 9 and Figure 10 is respectively the linear solder joint of Sn3.0Ag3.0Bi3.0In solders with mono-crystalline structures shown in Fig. 8
Electromigration SEM pictures and electromigration under the conditions of compound thickness situation of change between interface metal, it is seen then that with mono-crystalline structures
Inside solder joint either solder welding spot or the intermetallic compound situation of change of welding point interface relatively has the weldering of polycrystalline structure
Point is violent, and therefore, the electromigration reliability of the linear solder joint of Sn3.0Ag3.0Bi3.0In solders with polycrystalline structure is better than having
The linear solder joint of Sn3.0Ag3.0Bi3.0In solders of mono-crystalline structures.
Claims (7)
1. the method for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, the solder joint polycrystalline ratio of making reach 100%,
Welding spot structure is divided into docking, overlap joint and bga component etc., specifically includes following steps：
(1), the making of pad or chip is carried out according to actual needs, and is purged the oxide and pollutant of bond pad surface；
It such as uses aqueous solution of nitric acid to remove the oxide on the surfaces such as pad, the pollution on the surfaces such as pad is removed using acetone or alcohol etc.
Object；
(2), when making docking or ovelapping spot weld, prepare solder, prepare for the remelting preparation of follow-up polycrystalline structure solder joint；
When making ball grid array (Ball Grid Array, BGA) solder joint encapsulating structure, then need that solder is prepared into pricker first
Then pellet uses remelting processing rework profile to carry out solder ball and is connect with the remelting of pad or chip, is cooled to room temperature, is
The follow-up remelting preparation with polycrystalline structure solder joint package assembling is prepared；
(3), when making docking or ovelapping spot weld, soldering paste is applied between two pads, using remelting processing rework profile, and
During welding spot remelting butt welding point apply vibration, carry out solder joint remelting prepare, be cooled to room temperature, docked accordingly or
Ovelapping spot weld；
When preparing bga structure, will be prepared pad with salient point or chip pass through remelting processing flow back it is bent
Line is welded on hollow piece or missing solder disk, and is applied to encapsulating structure during welding spot remelting and vibrated, and the weight of solder joint is carried out
It is melted standby, it is cooled to room temperature, obtains corresponding BGA solder joints.
2. the method according to claim 1 for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, feature exist
In：The pad is selected from Cu, Cu/Ni/Au, Cu/Cu6Sn5。
3. the method according to claim 1 for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, feature exist
In：The solder is selected from bianry alloy SnCu series, SnAg series, SnZn series, SnBi series or SnIn series, or is selected from three
First alloy SnAgCu series, SnAgBi series or SnAgIn series, or it is selected from quaternary SnAgBiIn series leadless solders.
4. the method according to claim 1 for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, feature exist
In：Vibration mode in the step (3) is mechanical vibration, electric-liquid type vibration or electrodynamic type vibration, vibration frequency 10Hz-
10KHz。
5. the method according to claim 1 for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, feature exist
In：Vibration in the step (3) applies dwell time after solder joint cooled and solidified process start time.
6. the method according to claim 1 for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, feature exist
In：Remelting in the step (2) and (3), temperature range are selected from 200 DEG C to 700 DEG C.
7. the method according to claim 1 for preparing the unleaded interconnection solder joint of polycrystalline structure by applying vibration, feature exist
In：Cooling in the step (2) and (3) is selected from the type of cooling of furnace cooling, air-cooled, air-cooled, water cooling or oil cooling.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810103345.8A CN108380994B (en) | 2018-02-01 | 2018-02-01 | Method for preparing lead-free interconnection welding spots of polycrystalline structure by applying vibration |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810103345.8A CN108380994B (en) | 2018-02-01 | 2018-02-01 | Method for preparing lead-free interconnection welding spots of polycrystalline structure by applying vibration |
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| CN108380994B CN108380994B (en) | 2023-08-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114211075A (en) * | 2021-12-31 | 2022-03-22 | 北京工业大学 | Method for changing remelting crystal orientation of welding spot of Sn-based brazing filler metal by changing welding parameters |
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| CN101256972A (en) * | 2007-02-28 | 2008-09-03 | 富士通株式会社 | Method of mounting an electronic component and mounting apparatus |
| CN107052493A (en) * | 2017-04-10 | 2017-08-18 | 河南科技大学 | A kind of brazing device and method for welding of many auxiliary |
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2018
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256972A (en) * | 2007-02-28 | 2008-09-03 | 富士通株式会社 | Method of mounting an electronic component and mounting apparatus |
| CN107052493A (en) * | 2017-04-10 | 2017-08-18 | 河南科技大学 | A kind of brazing device and method for welding of many auxiliary |
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| Title |
|---|
| PENG LI等: "Microstructure and Intermetallic Compounds in Sn-3Ag-3Bi-3In solder joints on Cu Matrix", 《2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY》 * |
| 刘积厚等: "Cu/Sn/Cu超声-TLP接头的显微组织与力学性能", 《金属学报》 * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114211075A (en) * | 2021-12-31 | 2022-03-22 | 北京工业大学 | Method for changing remelting crystal orientation of welding spot of Sn-based brazing filler metal by changing welding parameters |
| CN114211075B (en) * | 2021-12-31 | 2023-09-19 | 北京工业大学 | Method for changing remelting crystal orientation of welding spot of Sn-based solder |
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| Publication number | Publication date |
|---|---|
| CN108380994B (en) | 2023-08-08 |
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