CN108380994B - Method for preparing lead-free interconnection welding spots of polycrystalline structure by applying vibration - Google Patents
Method for preparing lead-free interconnection welding spots of polycrystalline structure by applying vibration Download PDFInfo
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- CN108380994B CN108380994B CN201810103345.8A CN201810103345A CN108380994B CN 108380994 B CN108380994 B CN 108380994B CN 201810103345 A CN201810103345 A CN 201810103345A CN 108380994 B CN108380994 B CN 108380994B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The method for preparing the lead-free interconnection welding spot with the polycrystalline structure by applying vibration belongs to the field of material preparation and connection, is suitable for preparing the lead-free interconnection welding spot with polycrystalline orientation, and can remarkably improve the service reliability of the lead-free interconnection welding spot because the polycrystalline proportion of the prepared welding spot reaches 100 percent. The invention has the advantages that lead-free interconnection welding spots with various structures, such as butt joint, lap joint, ball Grid Array (BGA) welding spot packaging structure and the like, can be prepared, and the obtained lead-free interconnection welding spots are ensured to have polycrystalline structures; the process is simple, the cost is low, and the process is not different from the traditional welding spot preparation process except that vibration is applied in the remelting preparation process; meanwhile, the obtained lead-free interconnection welding spot can meet the requirements of practical application.
Description
Technical Field
The invention relates to a method for preparing a lead-free interconnection welding spot with a polycrystalline structure by applying vibration, belongs to the field of material preparation and connection, is suitable for preparing the lead-free interconnection welding spot with polycrystalline orientation, and can obviously improve the service reliability of the lead-free interconnection welding spot.
Background
The solder joint plays roles of mechanical connection, electric signal transmission and the like in the microelectronic device, and is an indispensable component of the microelectronic package. Today, on the one hand, microelectronic devices continue to evolve toward micro, light, thin, and multi-functionality; on the other hand, the packaging space is reduced, the current density is increased, the heat generation of the chip is increased, and the working environment where the welding spots are located becomes unprecedented harsh. Moreover, the large difference in thermal expansion coefficients between the different packaging materials causes a further increase in the stress strain experienced by the solder joints due to changes in ambient temperature and frequent switching of the power supply. Thus, the solder joint becomes a weak link in the electronic device, and the reliability and service life of the electronic device are largely dependent on the reliability of the solder joint.
Conventional SnPb eutectic solder joints tend to be isotropic, mainly due to the relatively uniform distribution of Sn and Pb phases in the SnPb solder joints, but Pb is toxic and has been clearly prohibited by the eu directive, and thus lead-free solders have been developed in recent years. However, unlike SnPb pads, lead-free interconnect pads exhibit strong anisotropy because lead-free interconnect pads are typically composed of single crystals or a limited number of β -Sn grains, whereas β -Sn has a body-centered tetragonal crystal structure with a lattice constant of a=b=0.5632, c=0.3182, c/a=0.546, with strong anisotropy. Thus, the reliability of lead-free interconnect pads is severely affected, and the crystal orientation of each die in the pad is closely related to its reliability. For example, if the c-axis of the β -Sn grains in the solder joint is approximately parallel to the plane of the solder pad during thermal cycling, the CTE mismatch between the solder and the material of the solder pad is greater and the interconnect bond with such crystallographic orientation will be more prone to failure; for another example, during electromigration, the diffusion rate of atoms in the solder joint is affected by the β -Sn grains, and the diffusion rate of atoms along the c-axis of the β -Sn grains is significantly higher than along the a-axis or b-axis, and a solder joint having a c-axis and a plane of the solder joint that is approximately perpendicular to the crystal orientation will be more susceptible to failure. Therefore, a polycrystalline structure is formed in the lead-free welding spot, so that the lead-free welding spot is isotropic, and the lead-free welding spot has very important significance for improving the reliability of the connecting welding spot.
The invention adopts a preparation method of applying vibration to welding spots in the welding spot remelting process, and successfully prepares the lead-free polycrystalline welding spots, because the nucleation core in the welding spots is increased in the welding spot remelting process under the action of the vibration, and various crystal orientations are formed in the welding spots after cooling and solidification. The inventor finds through subsequent welding spot reliability experiments that the polycrystalline welding spot has better service reliability, including electromigration reliability, thermal fatigue reliability and the like, and obtains better reliability than the traditional SnPb brazing filler metal, because the mechanical property of the SnAgCu lead-free brazing filler metal is better than that of the SnPb brazing filler metal, and meanwhile, the polycrystalline welding spot structure with excellent performance is formed on the polycrystalline welding spot structure, so that the service reliability of the polycrystalline SnAgCu lead-free brazing filler metal welding spot is obviously improved compared with that of the SnPb brazing filler metal.
Disclosure of Invention
The invention aims at preparing the lead-free interconnection welding spot with a polycrystalline structure aiming at the characteristic that the reliability of a lead-free welding spot monocrystal or twin crystal structure is obviously lower than that of a welding spot with a polycrystalline structure. The overall service reliability of the polycrystalline structure welding spots is more excellent, for example, the welding spots with one orientation have excellent electromigration reliability, the welding spots with the other orientation have excellent thermal fatigue reliability, and the thermal fatigue or electromigration reliability of the polycrystalline welding spots is between the two and has consistency. For a packaging structure, the number of welding spots is hundreds to thousands, the failure of any welding spot can cause the integral failure of the packaging structure, at the moment, the advantage of consistent service life of the polycrystalline welding spot under the same service condition is more prominent, and meanwhile, the service life prediction of a component with the welding spot with the polycrystalline structure is more consistent and accurate, so that the lead-free interconnection welding spot with the polycrystalline structure prepared by the invention can obviously improve the comprehensive performance and service reliability of the welding spot.
In order to achieve the above purpose, the present invention adopts the following technical scheme.
The method for preparing the lead-free interconnection welding spot of the polycrystalline structure by applying vibration comprises the following steps:
(1) Manufacturing a bonding pad or a chip according to actual needs, and removing oxides and pollutants on the surface of the bonding pad; if nitric acid aqueous solution and the like are adopted to remove oxides on the surfaces of the bonding pads and the like, acetone or ethanol and the like are adopted to remove pollutants on the surfaces of the bonding pads and the like;
(2) Preparing solder when manufacturing butt joint or lap joint welding spots, and preparing for remelting preparation of the welding spots with the subsequent polycrystalline structure;
when a Ball Grid Array (BGA) solder joint packaging structure is manufactured, firstly, solder is required to be prepared into solder balls, then, reflow connection between the solder balls and a bonding pad or a chip is carried out by adopting a reflow process reflow curve, and the solder balls are cooled to room temperature so as to prepare for subsequent reflow preparation of a solder joint packaging component with a polycrystalline structure;
(3) When butt joint or lap joint welding spots are manufactured, solder paste is coated between the two welding spots, a reflow curve is adopted, vibration is applied to the welding spots in the welding spot reflow process, the remelting preparation of the welding spots is carried out, and the welding spots are cooled to room temperature, so that corresponding butt joint or lap joint welding spots are obtained;
when the BGA packaging structure is prepared, the prepared bonding pad or chip with the convex point is welded on an empty chip or empty bonding pad through a reflow process reflow curve, vibration is applied to the packaging structure in the welding spot reflow process, the reflow preparation of the welding spot is carried out, and the cooling is carried out to room temperature, so that the corresponding BGA welding spot is obtained;
the bonding pad is selected from Cu, cu/Ni/Au, cu/Cu 6 Sn 5 ；
The solder is binary alloy SnCu series, snAg series, snZn series, snBi series or SnIn series, ternary alloy SnAgCu series, snAgBi series or SnAgIn series, or quaternary SnAgBiIn series lead-free solder.
The vibration mode in the step (3) is mechanical vibration, electrohydraulic vibration or electric vibration, and the vibration frequency is 10Hz-10KHz.
The vibration application stop time in the step (3) is after the start time of the cooling solidification process of the welding spot;
remelting in the steps (2) and (3), wherein the temperature range is 200-700 ℃;
and (3) cooling in the steps (2) and (3), and selecting a cooling mode of furnace-following cooling, air cooling, water cooling or oil cooling.
The prepared lead-free interconnect pads were damascene, ground and polished to obtain electron back scattering diffraction (Electron Backscattered Diffraction, EBSD) data and the data was analyzed.
The invention has the advantages that lead-free interconnection welding spots with various structures, such as butt joint, lap joint, BGA welding spot packaging structure and the like, can be prepared, and the obtained lead-free interconnection welding spots are ensured to have polycrystalline structures, and the polycrystalline proportion of the welding spots reaches 100%; the process is simple, the cost is low, and the process is not different from the traditional welding spot preparation process except that vibration is applied in the remelting preparation process; meanwhile, the obtained lead-free interconnection welding spot can meet the requirements of practical application.
Drawings
Fig. 1: pictures with Cu pad linear pads;
fig. 2: EBSD data of Sn3.5Ag solder linear welding spots with single crystal structure;
(a) An EBSD orientation profile; (b) a grain boundary profile; (c) (001) and (100) pole figures; (d) Orientation differential layout
Fig. 3: EBSD data of Sn3.5Ag solder linear welding spots with a twin crystal structure;
(a) An EBSD orientation profile; (b) a grain boundary profile; (c) (001) and (100) pole figures; (d) Orientation differential layout
Fig. 4: vibration is applied in the remelting preparation process, and EBSD data of the Sn3.5Ag solder linear welding spots with the polycrystalline structure are displayed after cooling;
(a) An EBSD orientation profile; (b) a grain boundary profile; (c) (001) and (100) pole figures; (d) Orientation differential layout
Fig. 5: EBSD data of Sn3.0Ag3.0Bi3.0In solder linear welding spots with polycrystalline structure;
(a) An EBSD orientation profile; (b) a grain boundary profile; (c) (001) and (100) pole figures; (d) Orientation differential layout
Fig. 6: FIG. 5 shows an electromigration SEM image of a Sn3.0Ag3.0Bi3.0In solder linear joint with a polycrystalline structure;
(a)0h；(b)168h；(c)336h；(d)504h
fig. 7: FIG. 5 shows the thickness variation of the interfacial intermetallic compound under the condition of linear solder joint electromigration of Sn3.0Ag3.0Bi3.0In solder with polycrystalline structure;
fig. 8: EBSD data of Sn3.0Ag3.0Bi3.0In solder linear welding spots with single crystal structure;
(a) An EBSD orientation profile; (b) (001) and (100) pole figures; (c) Orientation differential layout
Fig. 9: FIG. 8 shows an electromigration SEM image of a linear solder joint of Sn3.0Ag3.0Bi3.0In with a single crystal structure;
(a)0h；(b)168h；(c)336h；(d)504h
fig. 10: FIG. 8 shows the thickness variation of the interfacial intermetallic compound under the electromigration conditions of the linear solder joints of Sn3.0Ag3.0Bi3.0In solder with single crystal structure.
Detailed Description
The present invention is further illustrated by the following examples, but the present invention is not limited to the following examples.
Example 1: fig. 1 and 4 specifically illustrate embodiments of the present invention and, in conjunction with fig. 5, 6, 7, 8, 9 and 10, illustrate that the electromigration reliability of a polycrystalline pad structure is superior to that of a single crystal pad.
The cross-sectional dimensions were 400 μm by 400 μm and the thickness was 300 μm, representing the fabrication of Cu/Sn3.5Ag (wt.%)/Cu linear pads of the polycrystalline structure.
1、The copper pads were wire cut to 400 μm x 10mm and 99.99wt.% pure, and the pads were placed in a prepared volume fraction of 30% HNO 3 Soaking in aqueous solution for 30s to remove oxide on the surface of the pad, then soaking the pad in acetone solution for 60s to remove pollutants on the surface of the pad, and then drying for later use;
2. the double-sided adhesive tape is adhered to a printed circuit board (Printed circuit boards, PCB), the size of the PCB is 10mm multiplied by 2mm, the material is FR-4, and a copper bonding pad to be welded is adhered to the double-sided adhesive tape, so that the bonding pads are parallel to each other and have a spacing of 300 mu m;
3. the solder adopts Sn3.5Ag solder paste provided by Japan Qianzhen Metal industry Co., ltd, the Sn3.5Ag solder paste is stored in a refrigerator before being used, and is taken out of the refrigerator and fully stirred 2 hours before being used so as to restore the viscosity and activity, and the solder paste is coated between two copper pads by adopting a cotton swab;
4. applying vibration to the welding spot by using a specified reflow process reflow curve (the reflow temperature is 245 ℃ and is kept above 217 ℃ for 60 seconds), and applying vibration to the welding spot by using a mechanical vibration table (the whole welding spot is placed on the vibration table) in the reflow process, wherein the vibration frequency is 20Hz, air cooling is performed for solidification, and the vibration is stopped to be applied to obtain a linear welding spot, wherein the mechanical vibration device is a mechanical vibration table (VS-5060L) of Shenzhen Yinghao technology Co., ltd, and the hot air remelting device is a hot air repair workbench (ST-325) of American PACE Co.;
5. placing the linear welding spots and the PCB board into acetone solution, taking down the linear welding spots, taking the picture of the obtained linear welding spots as shown in fig. 1, grinding and polishing the appointed cross section of the linear welding spots, observing the grain orientation of the butt welding spots by means of EBSD, and remelting the EBSD data of the linear welding spots under the action of vibration to prepare welding spots with a polycrystalline structure as shown in fig. 4;
6. the remelted Cu/sn3.0ag3.0bi3.0in/Cu butt joint shown in fig. 5 had a polycrystalline structure, which was placed at 1×10 4 A/cm 2 Fig. 6 and 7 are respectively an electromigration SEM picture of a linear solder joint of sn3.0ag3.0bi3.0in solder with polycrystalline structure shown in fig. 5 and interfacial intermetallic compound under electromigration conditionsThe thickness of the object changes; fig. 9 and 10 are respectively an electromigration SEM image of the sn3.0ag3.0bi3.0in solder linear solder joint with a single crystal structure shown in fig. 8 and the thickness variation of the intermetallic compound of the interface under the electromigration condition, and it can be seen that the variation of the intermetallic compound of the solder joint with the single crystal structure, whether the solder joint is inside or at the interface of the solder joint, is more severe than that of the solder joint with a polycrystalline structure, so that the electromigration reliability of the sn3.0ag3.0bi3.0in solder linear solder joint with the polycrystalline structure is better than that of the sn3.0ag3.0bi3.0in solder linear solder joint with the single crystal structure.
Claims (1)
1. The method for preparing the lead-free interconnection welding spot with the polycrystalline structure by applying vibration comprises the following steps that the polycrystalline proportion of the manufactured welding spot reaches 100 percent:
the cross section size is 400 mu m multiplied by 400 mu m, the thickness is 300 mu m, and the Cu/Sn3.5Ag (wt.%)/Cu linear welding spot with a polycrystalline structure is manufactured;
(1) The copper pads were wire cut to 400 μm x 10mm and 99.99wt.% pure, and the pads were placed in a 30% volume fraction of HNO 3 Soaking in aqueous solution for 30s to remove oxide on the surface of the pad, then soaking the pad in acetone solution for 60s to remove pollutants on the surface of the pad, and then drying for later use;
(2) Adhering double-sided adhesive tape to a printed circuit board (Printed circuit boards, PCB) with the size of 10mm multiplied by 2mm and the material of FR-4, adhering copper bonding pads to be welded to the double-sided adhesive tape, and ensuring that the bonding pads are parallel to each other and have a spacing of 300 mu m;
(3) The solder adopts Sn3.5Ag soldering paste, the Sn3.5Ag soldering paste is stored in a refrigerator before being used, and is taken out of the refrigerator 2 hours in advance and fully stirred so as to restore the viscosity and activity of the solder, and the soldering paste is coated between two copper pads by adopting a cotton swab;
(4) The reflow curve of the designated remelting process is used, the remelting temperature is 245 ℃ and is kept above 217 ℃ for 60 seconds, a mechanical vibration table is adopted to apply vibration to a welding spot in the remelting process, the vibration frequency is 20Hz, air cooling solidification is carried out, and the application of vibration is stopped, so that a linear welding spot is obtained;
(5) And placing the linear welding spots and the PCB into an acetone solution, taking down the linear welding spots, grinding and polishing the appointed cross section of the linear welding spots, observing the grain orientation of the butt welding spots by means of EBSD, and remelting under the vibration effect to prepare the welding spots with a polycrystalline structure.
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| CN201810103345.8A CN108380994B (en) | 2018-02-01 | 2018-02-01 | Method for preparing lead-free interconnection welding spots of polycrystalline structure by applying vibration |
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| CN114211075B (en) * | 2021-12-31 | 2023-09-19 | 北京工业大学 | Method for changing remelting crystal orientation of welding spot of Sn-based solder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256972A (en) * | 2007-02-28 | 2008-09-03 | 富士通株式会社 | Method of mounting an electronic component and mounting apparatus |
| CN107052493A (en) * | 2017-04-10 | 2017-08-18 | 河南科技大学 | A kind of brazing device and method for welding of many auxiliary |
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2018
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256972A (en) * | 2007-02-28 | 2008-09-03 | 富士通株式会社 | Method of mounting an electronic component and mounting apparatus |
| CN107052493A (en) * | 2017-04-10 | 2017-08-18 | 河南科技大学 | A kind of brazing device and method for welding of many auxiliary |
Non-Patent Citations (1)
| Title |
|---|
| Cu/Sn/Cu超声-TLP接头的显微组织与力学性能;刘积厚等;《金属学报》;20170228;第53卷(第2期);第228页右栏倒数第2段至第230页左栏第1段） * |
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