CN108422117B - Method for preparing lead-free interconnection welding spot with polycrystalline structure by applying current - Google Patents
Method for preparing lead-free interconnection welding spot with polycrystalline structure by applying current Download PDFInfo
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- CN108422117B CN108422117B CN201810102951.8A CN201810102951A CN108422117B CN 108422117 B CN108422117 B CN 108422117B CN 201810102951 A CN201810102951 A CN 201810102951A CN 108422117 B CN108422117 B CN 108422117B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K28/00—Welding or cutting not covered by any of the preceding groups, e.g. electrolytic welding
Abstract
The method for preparing the lead-free interconnection welding spot with the polycrystalline structure by applying current belongs to the field of material preparation and connection, is suitable for preparing the lead-free interconnection welding spot with polycrystalline orientation, the polycrystalline proportion of the prepared welding spot reaches 100 percent, and the service reliability of the lead-free interconnection welding spot can be obviously improved. The method has the advantages that the lead-free interconnection welding spot with various structures can be prepared, such as butt joint, lap joint, Ball Grid Array (BGA) welding spot packaging structures and the like, and the obtained lead-free interconnection welding spot is ensured to have a polycrystalline structure; the process is simple, the cost is low, and the process is not different from the traditional welding spot preparation process except for electrifying in the remelting preparation process; meanwhile, the obtained lead-free interconnection welding spot can meet the requirements of practical application.
Description
Technical Field
The invention discloses a method for preparing a lead-free interconnection welding spot with a polycrystalline structure by applying current, belongs to the field of material preparation and connection, is suitable for preparing the lead-free interconnection welding spot with polycrystalline orientation, and can obviously improve the service reliability of the lead-free interconnection welding spot, and the polycrystalline proportion of the welding spot prepared by the method reaches 100%.
Background
The solder joint plays roles of mechanical connection, electric signal transmission and the like in a microelectronic device and is an indispensable component of microelectronic packaging. Today, on the one hand, microelectronic devices are constantly evolving towards being micro, light, thin and multifunctional; on the other hand, the packaging space is reduced, the current density is increased, the heat generation of the chip is increased, and the working environment of the welding spot is harsh. Moreover, the large difference in thermal expansion coefficient between different packaging materials causes the stress strain experienced by the solder joint to further increase due to changes in ambient temperature and frequent switching of the power supply. Therefore, solder joints become weak links in electronic devices, and the reliability and service life of the electronic devices depend on the reliability of the solder joints to a great extent.
Traditional SnPb eutectic solder welding spots tend to show isotropy, which is mainly because two phases of Sn and Pb are distributed in the SnPb welding spots relatively uniformly, but Pb is toxic, and European Union instructions clearly prohibit the use of the Sn and Pb eutectic solder welding spots, so that the lead-free solder is developed in recent years. However, unlike SnPb solder, lead-free interconnect solder exhibits strong anisotropy because lead-free interconnect solder is generally composed of single crystal or limited β -Sn grains, and β -Sn has a body-centered tetragonal crystal structure with a lattice constant of a-b-0.5632, c-0.3182, and c/a-0.546, with strong anisotropy. Therefore, the reliability of the lead-free interconnection pad is seriously affected, and the crystal orientation of each crystal grain in the pad is closely related to the reliability thereof. For example, if the c-axis of the β -Sn grains in the solder joint is nearly parallel to the plane of the bond pad during thermal cycling, the CTE mismatch between the solder and the bond pad material is large and interconnect solder joints with this crystallographic orientation will be more susceptible to failure; as another example, during electromigration, the diffusion rate of atoms in the solder joint is affected by the β -Sn grains, the diffusion rate of atoms along the c-axis of the β -Sn grains is significantly higher than along the a-axis or the b-axis, and solder joints having a c-axis that is nearly perpendicular to the plane of the solder joint will be more susceptible to failure. Therefore, a polycrystalline structure is formed in the lead-free welding spot, so that the lead-free welding spot is isotropic, and the lead-free welding spot has very important significance for improving the reliability of the welding spot.
The invention adopts a preparation method of applying current to the welding spot in the remelting process of the welding spot to successfully prepare the lead-free polycrystalline welding spot, because the nucleation core in the welding spot is increased in the remelting process of the welding spot under the action of the current, and a plurality of crystal orientations are formed in the welding spot after solidification. The inventor discovers through subsequent reliability experiments that the polycrystalline welding spot has better service reliability, including electromigration reliability, thermal fatigue reliability and the like, and obtains excellent reliability exceeding that of the traditional SnPb brazing filler metal, because the lead-free brazing filler metal such as SnAgCu has better mechanical property than the SnPb brazing filler metal, and simultaneously, both the lead-free brazing filler metal and the SnAgCu have the polycrystalline welding spot structure with excellent performance, the service reliability of the polycrystalline lead-free brazing filler metal such as SnAgCu is obviously improved compared with that of the SnPb brazing filler metal polycrystalline welding spot.
Disclosure of Invention
The invention aims to prepare the lead-free interconnection welding spot with the polycrystalline structure aiming at the characteristic that the reliability of the single crystal or twin crystal structure of the lead-free welding spot is obviously lower than that of the welding spot with the polycrystalline structure. The overall service reliability of the polycrystalline structure solder joint is more excellent, for example, the solder joint with one orientation has excellent electromigration reliability, the solder joint with the other orientation has excellent thermal fatigue reliability, and the thermal fatigue or electromigration reliability of the polycrystalline solder joint is between the two and has consistency. For one packaging structure, the number of welding points is as many as hundreds to thousands, the failure of any welding point can cause the integral failure of the packaging structure, at the moment, the advantage of consistent service life of polycrystalline welding points under the same service condition is more prominent, and meanwhile, the service life prediction of assemblies with the polycrystalline welding points is more consistent and accurate, so that the lead-free interconnection welding points with the polycrystalline structure prepared by the invention can obviously improve the comprehensive performance and the service reliability of the welding points.
In order to achieve the purpose, the invention adopts the following technical scheme.
A method for preparing a lead-free interconnection welding spot of a polycrystalline structure by applying current, wherein the welding spot structure can be a butt joint, lap joint and BGA packaging assembly and the like, and the method specifically comprises the following steps:
(1) manufacturing a bonding pad or a chip according to actual needs, and removing oxides and pollutants on the surface of the bonding pad; for example, nitric acid aqueous solution and the like are adopted to remove oxides on the surfaces of the bonding pad and the like, and acetone or ethanol and the like are adopted to remove pollutants on the surfaces of the bonding pad and the like;
(2) preparing brazing filler metal when butt joint or lap joint welding spots are manufactured, and preparing for remelting preparation of subsequent welding spots with polycrystalline structures;
when a Ball Grid Array (BGA) welding spot packaging structure is manufactured, firstly, brazing filler metal is required to be prepared into brazing filler metal balls, then, a reflow curve of a remelting process is adopted to carry out remelting connection of the brazing filler metal balls and a bonding pad or a chip, and the obtained bonding pad or chip with salient points is cooled to room temperature to prepare for remelting preparation of a subsequent welding spot packaging component with a polycrystalline structure;
(3) when butt joint or lap joint welding spots are manufactured, solder paste is coated between the two welding spots, a reflow curve of a remelting process is adopted, the welding spots are electrified in the remelting process of the welding spots, remelting preparation of the welding spots is carried out, and the welding spots are cooled to room temperature to obtain corresponding butt joint or lap joint welding spots;
when the BGA packaging structure is prepared, welding the bonding pad or the chip with the salient points, which is prepared in the step (2), on the empty chip or the empty bonding pad through a reflow curve of a remelting process, electrifying the packaging structure in a welding spot remelting process, carrying out remelting preparation on a welding spot, and cooling to room temperature to obtain a corresponding BGA welding spot;
(4) and inlaying, grinding and polishing the prepared lead-free interconnection welding spot to acquire Electron Back Scattering Diffraction (EBSD) data, and analyzing the data.
The bonding pad or chip is selected from Cu, Cu/Ni/Au, Cu/Cu6Sn5；
The solder or the soldering paste is selected from binary alloy SnCu series, SnAg series, SnZn series, SnBi series or SnIn series, or selected from ternary alloy SnAgCu series, SnAgBi series or SnAgIn series, or selected from quaternary SnAgBiIn series lead-free solder;
the current density in the electrifying process is 1 multiplied by 102To 1X 106A/cm2；
Remelting in the step (2) and the step (3) at the temperature range of 200-700 ℃.
And (3) cooling in the steps (2) and (3) is selected from furnace cooling, air cooling, water cooling or oil cooling.
The method has the advantages that the method can prepare the lead-free interconnection welding spots with various structures, such as butt joint, lap joint, BGA welding spot packaging structures and the like, and ensures that the obtained lead-free interconnection welding spots have a polycrystalline structure, and the polycrystalline proportion of the welding spots reaches 100 percent; the process is simple, the cost is low, and the process is not different from the traditional welding spot preparation process except for electrifying in the remelting preparation process; meanwhile, the obtained lead-free interconnection welding spot can meet the requirements of practical application.
Drawings
FIG. 1: an X-ray image of the BGA package structure;
FIG. 2: EBSD data of Sn3.0Ag0.5Cu brazing filler metal BGA welding spots which present a single crystal structure without current;
(a) EBSD orientation profile (overlay grain boundary profile); (b) (001) and (100) pole figures; (c) orientation differential layout;
FIG. 3: EBSD data of Sn3.0Ag0.5Cu brazing filler metal BGA welding spots which present a twin crystal structure without electric current;
(a) EBSD orientation profile (overlay grain boundary profile); (b) (001) and (100) pole figures; (c) distributing 50 DEG, 60 DEG and 70 DEG orientation difference distribution functions and orientation differences;
FIG. 4: applying current in the remelting preparation process, and cooling to obtain EBSD data of Sn3.0Ag0.5Cu brazing filler metal BGA welding spots in a polycrystalline structure;
(a) EBSD orientation profile (overlay grain boundary profile); (b) (001) and (100) pole figures; (c) orientation differential layout;
FIG. 5: pictures of Cu/Sn3.5Ag/Cu solder butt joints;
FIG. 6: applying current in the remelting preparation process, and cooling to obtain EBSD data of the Sn3.5Ag brazing filler metal butt joint with a polycrystalline structure;
(a) EBSD orientation profile; (b) distributing a grain boundary diagram; (c) (001) and (100) pole figures; (d) orientation differential layout;
FIG. 7: EBSD data of Sn3.0Ag3.0Bi3.0In brazing filler metal linear welding spots with polycrystalline structures;
(a) EBSD orientation profile; (b) distributing a grain boundary diagram; (c) (001) and (100) pole figures; (d) orientation differential layout;
FIG. 8: FIG. 7 is an electromigration SEM image of a Sn3.0Ag3.0Bi3.0In solder linear solder joint with a polycrystalline structure;
(a)0h；(b)168h；(c)336h；(d)504h；
FIG. 9: FIG. 7 shows the interface intermetallic compound thickness variation under electromigration condition of a Sn3.0Ag3.0Bi3.0In brazing filler metal linear solder joint with a polycrystalline structure;
FIG. 10: EBSD data of sn3.0ag3.0bi3.0in solder linear solder joints having a single crystal structure;
(a) EBSD orientation profile; (b) (001) and (100) pole figures; (c) orientation differential layout;
FIG. 11: FIG. 10 is an electromigration SEM photograph of a Sn3.0Ag3.0Bi3.0In solder linear solder joint having a single crystal structure;
(a)0h；(b)168h；(c)336h；(d)504h；
FIG. 12: FIG. 10 shows the interface intermetallic thickness variation under electromigration conditions for a linear solder joint of Sn3.0Ag3.0Bi3.0In solder having a single crystal structure.
Detailed Description
The present invention will be further illustrated with reference to the following examples, but the present invention is not limited to the following examples.
The following description specifically sets forth embodiments of the present invention in conjunction with fig. 1 and 4.
Example 1: the solder comprises Sn3.0Ag0.5Cu (wt.%), the solder interconnection welding spots are all in a polycrystalline structure, and the packaging size is 12mm multiplied by 1.1 mm.
1. And designing and manufacturing a corresponding bonding pad on a Printed Circuit Board (PCB) according to the chip structure, wherein the PCB is made of FR-4 plate material and has a thickness of 2.0 mm. The bonding pad adopts a Cu/Ni/Au three-layer structure, the thicknesses of the bottom Cu layer, the electroplated Ni layer and the top Au layer are respectively 35 microns, 5.0 microns and 0.1 micron, and the surface treatment is carried out on the bonding pad by adopting an organic solderability preservative film;
2. the solder is Sn3.0Ag0.5Cu solder provided by Kyowa Metal industries, Inc., the prepared solder sphere diameter is 300 mu m, wherein the solder paste is stored in a refrigerator before use, and is taken out of the refrigerator 2 hours in advance and is fully stirred before use so as to recover the viscosity and the activity of the solder paste;
3. placing the bonding pad into a prepared HNO with the volume fraction of 30%3Soaking the bonding pad in an aqueous solution for 30s to remove oxides on the surface of the bonding pad, then soaking the bonding pad in an acetone solution for 60s to remove pollutants on the surface of the bonding pad, and then drying the bonding pad for later use;
4. coating a proper amount of soldering paste on a chip, and obtaining the chip with solder bumps by using a specified reflow curve of a remelting process (the remelting temperature is 245 ℃ and is kept for 1 minute above 217 ℃), wherein the hot air remelting device is a hot air repair workbench (ST-325) of the American PACE company;
5. the chip with the solder salient points obtained in the step 4 is placed on a bonding pad of the PCB in an inverted mode, the reflow curve of the remelting process which is the same as that in the step 4 is adopted, remelting is carried out again, and 1 x 10 is applied to the bonding pad in the remelting process4A/cm2Assembling a chip with solder bumps on a Cu/Ni/Au bonding pad of an FR-4PCB, and performing air cooling solidification to obtain a BGA packaging assembly, wherein an X-ray image of the BGA packaging assembly is shown in figure 1, and peripheral array solder balls are 228 in total and have a spacing of 500 mu m;
6. the BGA packaging assembly is embedded, the designated section of the BGA packaging assembly is ground and polished, the grain orientation of a reflow soldering point prepared by remelting under the action of current is observed by means of EBSD, the EBSD data of the BGA packaging assembly is shown in figure 4, and the reflow soldering point prepared by remelting under the action of current is in a polycrystalline structure;
example 2: the cross-sectional dimension is 400 μm × 400 μm, the thickness is 300 μm, and the Cu/Sn3.5Ag (wt.%)/Cu butt joint has a polycrystalline structure. The following detailed description of embodiments of the invention is provided in conjunction with fig. 5 and 6, and in conjunction with fig. 7, 8, 9, 10, 11, and 12, illustrates the electromigration reliability of polycrystalline solder joint structures over single crystal solder joints.
1. The copper bonding pad is manufactured by wire cutting, the size of the copper bonding pad is 400 mu m multiplied by 10mm, the purity of the copper bonding pad is 99.99 wt.%, and the bonding pad is placed into HNO with the prepared volume fraction of 30 percent3Soaking the bonding pad in an aqueous solution for 30s to remove oxides on the surface of the bonding pad, then soaking the bonding pad in an acetone solution for 60s to remove pollutants on the surface of the bonding pad, and then drying the bonding pad for later use;
2. adhering a double-sided adhesive to the edge of a Printed Circuit Board (PCB), wherein the size of the PCB is 10mm multiplied by 2mm, the material is FR-4, and adhering copper bonding pads to be welded to the double-sided adhesive to ensure that the bonding pads are parallel to each other and the spacing is 300 mu m;
3. the solder adopts Sn3.5Ag solder paste provided by Kyowa Metal industries, Inc., the solder paste is stored in a refrigerator before use, the solder paste needs to be taken out of the refrigerator 2 hours in advance and fully stirred before use so as to recover the viscosity and the activity of the solder paste, and a certain amount of solder paste is coated between two copper pads by a cotton swab;
4. by using the specified reflow profile of the reflow process (reflow temperature 245oC and holding above 217oC for 60s) and applying 1X 10 to the solder point during the reflow process4A/cm2The linear welding spot is obtained by air cooling and solidification, and the hot air remelting device is a hot air repair workbench (ST-325) of American PACE company;
5. placing the linear welding spots and the PCB into an acetone solution, taking the linear welding spots down, wherein an obtained picture of the linear welding spots is shown in figure 5, then grinding and polishing the appointed cross section of the linear welding spots, observing the crystal grain orientation of the butt welding spots by means of EBSD (Electron Back scattered diffraction), and the EBSD data is shown in figure 6, so that the Cu/Sn3.0Ag3.0Bi3.0In/Cu butt welding spots prepared by remelting have a polycrystalline structure;
6. the Cu/Sn3.0Ag3.0Bi3.0In/Cu butt joint prepared by remelting as shown in FIG. 7 has a polycrystalline structure, and is placed at 1X 104A/cm2Performing an electromigration experiment at the current density of (1), and fig. 8 and 9 are an electromigration SEM picture of the sn3.0ag3.0bi3.0in brazing filler metal linear solder joint with the polycrystalline structure shown in fig. 7 and the interface intermetallic compound thickness variation under the electromigration condition, respectively; FIGS. 11 and 12 are drawingsIt is shown in fig. 10 that the electromigration SEM picture of the sn3.0ag3.0bi3.0in brazing filler metal linear welding spot having the single crystal structure and the interface intermetallic compound thickness change condition under the electromigration condition are different, and it can be seen that the welding spot having the single crystal structure is more severe than the welding spot having the polycrystalline structure in the change condition of the intermetallic compound inside the brazing filler metal welding spot or at the welding spot interface, and therefore, the electromigration reliability of the sn3.0ag3.0bi3.0in brazing filler metal linear welding spot having the polycrystalline structure is better than that of the sn3.0ag3.0bi3.0in brazing filler metal linear welding spot having the single crystal structure.
Claims (2)
1. A method for preparing a lead-free interconnection welding spot with a polycrystalline structure by applying current, wherein the polycrystalline proportion of the prepared welding spot reaches 100%, and the welding spot structure comprises a butt joint assembly, a lap joint assembly and a BGA packaging assembly, and is characterized by comprising the following steps:
(1) manufacturing a bonding pad or a chip according to actual needs, and removing oxides and pollutants on the surface of the bonding pad; removing oxides on the surface of the bonding pad by using a nitric acid aqueous solution, and removing pollutants on the surface of the bonding pad by using acetone or ethanol;
(2) preparing brazing filler metal when butt joint or lap joint welding spots are manufactured, and preparing for remelting preparation of subsequent welding spots with polycrystalline structures;
when a Ball Grid Array (BGA) welding spot packaging structure is manufactured, firstly, brazing filler metal is required to be prepared into brazing filler metal balls, then, a reflow curve of a remelting process is adopted to carry out remelting connection of the brazing filler metal balls and a bonding pad or a chip, and the obtained bonding pad or chip with salient points is cooled to room temperature to prepare for remelting preparation of a subsequent welding spot packaging component with a polycrystalline structure;
(3) when butt joint or lap joint welding spots are manufactured, solder paste is coated between the two welding spots, a reflow curve of a remelting process is adopted, the welding spots are electrified in the remelting process of the welding spots, remelting preparation of the welding spots is carried out, and the welding spots are cooled to room temperature to obtain corresponding butt joint or lap joint welding spots;
when the BGA packaging structure is prepared, welding the bonding pad or the chip with the salient points, which is prepared in the step (2), on the empty chip or the empty bonding pad through a reflow curve of a remelting process, electrifying the packaging structure in a welding spot remelting process, carrying out remelting preparation on a welding spot, and cooling to room temperature to obtain a corresponding BGA welding spot;
the solder or the soldering paste is selected from binary alloy SnCu series, SnAg series, SnZn series, SnBi series or SnIn series, or selected from ternary alloy SnAgCu series, SnAgBi series or SnAgIn series, or selected from quaternary SnAgBiIn series lead-free solder; the bonding pad or chip is selected from Cu, Cu/Ni/Au, Cu/Cu6Sn5(ii) a The current density in the electrifying process is 1 multiplied by 102To 1X 106A/cm2The application stop time is after the start time of the cooling and solidification process of the welding spot; remelting in the step (2) and the step (3) at the temperature range of 200-700 ℃.
2. The method for preparing a lead-free interconnection pad of a polycrystalline structure by applying an electric current according to claim 1, wherein the cooling in step (2) and the cooling in step (3) are selected from the group consisting of furnace cooling, air cooling, water cooling and oil cooling.
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| CN109396769A (en) * | 2018-12-10 | 2019-03-01 | 北京工业大学 | A kind of preparation method for micro linear docking solder joint in electric field |
| CN109396768A (en) * | 2018-12-10 | 2019-03-01 | 北京工业大学 | Apply the method that transient pulse electric field prepares miniature polycrystalline solder joint |
| CN112103262B (en) * | 2020-09-14 | 2022-09-06 | 大连理工大学 | Method for controlling crystal orientation and microstructure of all-intermetallic compound micro-interconnection welding spot |
| CN114211070B (en) * | 2021-12-31 | 2023-09-19 | 北京工业大学 | Welding method for enabling welding spot crystal grains to be oriented into multiple twin crystals |
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| CN107052493B (en) * | 2017-04-10 | 2023-05-26 | 河南科技大学 | Multi-field auxiliary brazing device and method |
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