CN115411006A - Micro-welding point based on nanocrystalline copper matrix and preparation method thereof - Google Patents
Micro-welding point based on nanocrystalline copper matrix and preparation method thereof Download PDFInfo
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- 239000010949 copper Substances 0.000 title claims abstract description 112
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 95
- 238000003466 welding Methods 0.000 title claims abstract description 62
- 239000011159 matrix material Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 161
- 239000002184 metal Substances 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 229910000679 solder Inorganic materials 0.000 claims abstract description 85
- 238000005219 brazing Methods 0.000 claims abstract description 72
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 66
- 239000000945 filler Substances 0.000 claims abstract description 59
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 38
- 238000009713 electroplating Methods 0.000 claims description 33
- 238000005476 soldering Methods 0.000 claims description 25
- 238000010992 reflux Methods 0.000 claims description 16
- 230000004907 flux Effects 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
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- 239000000126 substance Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000004021 metal welding Methods 0.000 claims 8
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 111
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 11
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- 229910018536 Ni—P Inorganic materials 0.000 description 5
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- 238000011160 research Methods 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/111—Manufacture and pre-treatment of the bump connector preform
- H01L2224/1111—Shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13199—Material of the matrix
- H01L2224/132—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13247—Copper [Cu] as principal constituent
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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Abstract
The invention discloses a micro-welding point based on a nanocrystalline copper matrix and a preparation method thereof. The high-temperature-resistant and high-temperature-resistant brazing alloy comprises a first substrate, a second substrate, a first nanocrystalline copper matrix, a second nanocrystalline copper matrix and a connecting medium, wherein the first nanocrystalline copper matrix is located on the first substrate, the second nanocrystalline copper matrix is located on the second substrate, the connecting medium is located between the first nanocrystalline copper matrix and the second nanocrystalline copper matrix, the connecting medium comprises Sn brazing filler metal or Sn-based alloy brazing filler metal, and an interface between the brazing filler metal and the nanocrystalline copper is intermetallic compound (IMC). Preparing Cu with layered IMC interface 3 Very little Sn IMC, cu 6 Sn 5 Random IMC orientation and grain sizeIs a submicron micro-interconnection welding spot. When the height of the brazing filler metal is less than 30 mu m, the brazing filler metal can be converted into a full IMC welding spot within 10min, and low-temperature interconnection high-temperature service is realized. The preparation process is simple, the cost is low, the micro-solder joint has good compatibility with the existing packaging technology, a series of problems of IMC interface stress concentration, strong IMC layer texture characteristics and Kendall holes in the traditional micro-solder joint are solved, and the reliability and the service performance of the micro-solder joint are improved.
Description
Technical Field
The invention belongs to the field of electronic manufacturing, and relates to a micro-welding spot based on a nanocrystalline copper matrix and a preparation method thereof.
Background
As chip fabrication technology has approached its physical limits, the integrated circuit industry has entered the "post moore's law" era, and electronic products have evolved toward miniaturization, high performance, and multiple functions. The size of the micro solder joint which has the functions of electrical signal transmission, mechanical connection, heat conduction, heat dissipation and the like is continuously reduced, so that the size effect that the size of the solder joint is reduced and the proportion of intermetallic compounds is increased is brought. In this case, the composition and structure of the intermetallic compound will greatly affect the reliability and service performance of the entire solder joint.
At present, sn-based alloy is commonly used as solder in production, polycrystalline copper material is used as a welding disc or a salient point, and reaction products of the Sn-based solder/polycrystalline copper interface are mainly scallop-shaped Cu 6 Sn 5 Intermetallic compound of Cu 6 Sn 5 Cu with layered structure between layer and copper substrate 3 Sn intermetallic compounds, cokendall pores, are also associated with the Sn intermetallic compounds in the copper matrix/Cu 3 Sn interface generation; at the same time, cu at the polycrystalline copper/Sn based solder interface of conventional micro-solder joints 6 Sn 5 Has certain texture characteristics which are more obvious along with the increase of reflow time and times, resulting in Cu 6 Sn 5 The anisotropy of the layer will be more intense. These problems all affect the reliability and service performance of the micro solder joints.
Researchers find that the morphology and orientation of intermetallic compounds in the interface reaction can be changed by regulating the grain structure and orientation of the copper pad, thereby improving the performance of the welding spot. The research on the interface reaction of single crystal copper is one of the current researches in the field, and the patent [ the Chinese patent granted public number: CN107058956B, date of authorized bulletin: 3, 15 and 2019]Using single crystal copper as Under Bump Metal (UBM) or bonding pad material to prepare micro-welding point with little Kendall hole but Cu 6 Sn 5 Orientation ofThe method still has the advantages (texture characteristics), and the compatibility of the current technology for preparing the single crystal copper substrate and the advanced packaging technology is poor, so that the method cannot be directly applied to actual production.
Therefore, in both the conventional polycrystalline copper matrix and the monocrystalline copper matrix studied hot, an intermetallic compound with texture characteristics is generated during interface reaction, and the texture has better mechanical and electrical properties in some directions, but the properties are not good in most directions, which will become a 'short plate' affecting the reliability and service performance of the micro-welding point.
Disclosure of Invention
According to the prior art, when welding spots are prepared by a polycrystal copper matrix and a monocrystal copper matrix, cu is formed on the interface 6 Sn 5 The intermetallic compound layer is scallop-shaped and prismatic, has coarse grains and certain texture characteristics, and is coated on Cu 6 Sn 5 Cu forming a layer between the layer and the copper matrix 3 And the intermetallic compound of Sn generates Kerkinjel holes at the same time. The invention introduces a nano-crystalline copper matrix, and utilizes the nano effect to lead the interface intermetallic compound (Cu) after the backflow 6 Sn 5 ) Is layered, polycrystalline, grain-refined and randomly oriented, and inhibits Cu 3 Sn is generated, the problems of Kendall holes and intermetallic compound textures can be well solved, the service life of the micro welding spot is long, the micro welding spot has good compatibility with the existing semiconductor technology, the growth speed is rapid, when the height of the welding spot is smaller than a preset value, the full intermetallic compound welding spot can be rapidly generated, and the high-temperature service of low-temperature welding is realized.
The technical scheme adopted by the invention is as follows:
the invention provides a micro-welding point based on a nanocrystalline copper matrix, which comprises the following components:
the solder-metal composite structure comprises a first substrate, a second substrate, a first nanocrystalline copper matrix, a second nanocrystalline copper matrix and a connecting medium, wherein the first nanocrystalline copper matrix is positioned on the first substrate and used as a first metal bonding pad, the second nanocrystalline copper matrix is positioned on the second substrate and used as a first metal bonding pad, the connecting medium is positioned between the first nanocrystalline copper matrix and the second nanocrystalline copper matrix and comprises Sn solder or Sn-based alloy solder, and a layered intermetallic compound is arranged at the interface between the solder and the nanocrystalline copper, namely a first metal bonding pad-intermetallic compound layer-solder-intermetallic compound layer-second metal bonding pad structure is arranged between the first substrate and the second substrate.
Based on the difference of the sizes of the brazing filler metals before brazing, the other micro-welding point based on the nanocrystalline copper matrix provided by the invention comprises the following components:
the high-temperature welding device comprises a first substrate, a second substrate, a first nanocrystalline copper matrix, a second nanocrystalline copper matrix and a connecting medium, wherein the first nanocrystalline copper matrix is positioned on the first substrate and used as a first metal bonding pad, the second nanocrystalline copper matrix is positioned on the second substrate and used as a second metal bonding pad, the connecting medium is positioned between the first nanocrystalline copper matrix and the second nanocrystalline copper matrix and comprises Sn brazing filler metal or Sn-based alloy brazing filler metal, a layered intermetallic compound is arranged at the interface of the brazing filler metal and the nanocrystalline copper, when the height of the brazing filler metal is less than 30 mu m, a welding spot can be rapidly converted into a full intermetallic compound welding spot, low-temperature welding and high-temperature service are realized, and at the moment, a first metal bonding pad-intermetallic compound layer-second metal bonding pad structure is arranged between the first substrate and the second substrate.
Further, the grain size of copper in the nanocrystalline copper matrix is less than 200nm; the grain size of the intermetallic compound is less than 3 μm, and the intermetallic compound has no texture characteristics.
The invention also discloses a preparation method of the micro-welding spot based on the nanocrystalline copper matrix, which comprises the following steps: carrying out a brazing reflow process on a combined structure formed by a first nanocrystalline copper matrix serving as a first metal pad and a second nanocrystalline copper matrix serving as a second metal pad, wherein brazing micro-bumps are arranged between the first substrate and the second substrate, preparing different products based on the size of brazing filler metal before brazing, and forming a first metal pad-intermetallic compound layer-brazing filler metal-intermetallic compound layer-second metal pad structure under a first working condition, wherein the thickness of the brazing filler metal before brazing is ensured not to be completely reacted;
under the second working condition, the thickness of the size of the brazing filler metal before brazing is less than 30 microns, and a first metal pad-intermetallic compound layer-second metal pad structure is formed.
In order to prepare the micro welding spot, the first technical scheme of the invention is as follows:
the method comprises the following steps: providing a first substrate, preparing at least one first metal bonding pad (or salient point) on the first substrate by adopting a method of one or a combination of more of electroplating, sputtering, vapor deposition, evaporation, ion plating and chemical plating, preparing a first weldable layer on the first metal bonding pad by adopting the method of electroplating, sputtering or chemical deposition, preparing Sn-based solder on the first weldable layer by adopting the methods of electroplating, sputtering, vapor deposition, evaporation, screen printing or ball planting and the like, and then preparing the Sn-based solder micro salient point by refluxing (without refluxing after electroplating, sputtering, vapor deposition and evaporation); providing a second substrate, preparing at least one second metal pad (or bump) on the second substrate by adopting a method of electroplating, sputtering, vapor deposition, evaporation, ion plating, chemical plating or a combination of one or more of the methods, and preparing a second weldable layer on the second metal pad by adopting an electroplating, sputtering or chemical deposition method;
the first and second substrates include, but are not limited to, a chip (chip), a substrate (substrate), and a Printed Circuit Board (PCB);
the first metal bonding pad (or bump) or the second metal bonding pad (or bump) is made of nanocrystalline copper, the grain size is less than 200nm, and the first metal bonding pad (or bump) or the second metal bonding pad (or bump) is provided with the same arrangement pattern;
the Sn-based brazing filler metal comprises pure Sn or an alloy formed by Sn and one or more of Ag, cu, in, bi, zn, ni, ga, sb, rare earth elements and the like;
step two: coating a welding flux on the second weldable layer, aligning the Sn-based brazing filler metal micro-bumps of the first substrate and the second weldable layer one by one, and placing the Sn-based brazing filler metal micro-bumps and the second weldable layer in contact to form a combined body;
step three: selecting a required reflow curve to perform brazing reflow on the combination formed in the second step, and forming a micro welding point after the reflow soldering;
the reflux curve comprises a preheating zone (an elevated temperature zone), a reflux zone and a cooling zone, and the peak reflux temperature of the reflux zone is at least 10 ℃ higher than the melting temperature of the micro-convex points;
in the cooling area, the Sn-based solder micro-bumps are completely converted from liquid state to solid state and connected with the first substrate and the second substrate to form micro welding spots;
in the first step, before the micro solder joint is prepared, a first solderable layer and a second solderable layer are respectively prepared on a first metal pad and a second metal pad, preferably, the materials are one or more of Ni, au, pd, ag, sn and an Organic solderable protective layer (OSP), and the solderable layers are dissolved in the solder after reflow;
in the third step, if the thickness of the brazing filler metal layer is less than 30 μm, the brazing filler metal layer can be completely reacted to generate a full intermetallic compound welding spot;
the structure of the micro welding spot is a first metal pad/an intermetallic compound layer/brazing filler metal/an intermetallic compound layer/a second metal pad or a first metal pad/an intermetallic compound layer/a second metal pad, the intermetallic compound layer is stacked and grown in a polycrystalline state, the micro welding spot has no texture characteristic and no obvious Cu 3 A Sn phase.
The second technical scheme is as follows:
the method comprises the following steps: providing a first substrate, preparing at least one first metal bonding pad (or salient point) on the first substrate by adopting a method of one or a combination of more of electroplating, sputtering, vapor deposition, evaporation, ion plating and chemical plating, preparing a first weldable layer on the first metal bonding pad by adopting a method of electroplating, sputtering or chemical deposition, preparing Sn-based solder on the first weldable layer by adopting a method of electroplating, sputtering, vapor deposition, evaporation, screen printing or ball planting, and preparing the Sn-based solder micro salient point by further refluxing (the Sn-based solder micro salient point can not be refluxed after the electroplating, sputtering, vapor deposition and evaporation); providing a second substrate, preparing at least one second metal bonding pad (or bump) on the second substrate by adopting a method of one or a combination of more of electroplating, sputtering, vapor deposition, evaporation, ion plating and chemical plating, preparing a second weldable layer on the second metal bonding pad by adopting an electroplating, sputtering or chemical deposition method, and forming an Sn-based solder layer (or forming an Sn-based solder micro bump after reflowing) after the Sn-based solder is electroplated, sputtered, vapor deposition, evaporation, screen printing or ball planting on the second weldable layer;
the first substrate and the second substrate can be chips, substrates, adapter plates, circuit boards and the like;
the first metal pad or the second metal pad is made of nanocrystalline copper, the grain size is less than 200nm, and the first metal pad or the second metal pad has the same arrangement pattern;
the Sn-based brazing filler metal comprises pure Sn or an alloy formed by Sn and one or more of Ag, cu, in, bi, zn, ni, ga, sb, rare earth elements and the like;
step two': coating a welding flux on the micro-bumps of the first substrate, aligning the welding flux with the Sn-based welding flux layers (or the Sn-based welding flux micro-bumps) of the second substrate one by one, and placing the welding flux and the Sn-based welding flux layers (or the Sn-based welding flux micro-bumps) in a contact manner to form a combined body;
a third step of: selecting a required reflow curve to perform soldering reflow on the combination formed in the second step, and forming a micro welding point after the reflow soldering;
the reflux curve comprises a preheating zone (an elevated temperature zone), a reflux zone and a cooling zone, and the peak reflux temperature of the reflux zone is at least 10 ℃ higher than the melting temperature of the micro-convex points;
in the cooling area, the micro salient points and the solder layer are all transformed into solid state after being fused in liquid state, and micro welding points for connecting the first substrate and the second substrate are formed;
in the first step, before the micro soldering point is prepared, a first solderable layer and a second solderable layer are respectively prepared on a first metal pad and a second metal pad, preferably, the materials are one or more of Ni, au, pd, ag, sn and OSP, and the solderable layers are dissolved after reflowing;
in the third step, if the thickness of the brazing filler metal layer is less than 30 μm, the brazing filler metal layer can be completely reacted to generate a full intermetallic compound welding spot;
the micro-welding point intermetallic compound layer is in a polycrystalline state, a fine crystalline state, layered and stacked growth, has no texture characteristic and has no obvious Cu 3 A Sn phase;
the structure of the micro welding spot is a first metal pad/an intermetallic compound layer/brazing filler metal/an intermetallic compound layer/a second metal pad or a first metal pad/an intermetallic compound layer/a second metal pad, and the intermetallic compound layer is multi-layerCrystalline layered stacking growth, no texture and no obvious Cu 3 A Sn phase.
The invention has the beneficial effects that: the invention introduces a nano-crystal copper bonding pad (or salient point) to replace the traditional metal bonding pad (or salient point), and is beneficial to intermetallic compound Cu due to the characteristics of more crystal boundaries, fast diffusion of copper atoms, more nucleation sites and the like of nano-crystal copper 6 Sn 5 Nucleating and growing in a layered, polycrystalline and fine crystalline state; meanwhile, because the intermetallic compound has fine crystal grains and more crystal boundaries, copper atoms are difficult to gather in Cu 6 Sn 5 Nanocrystalline copper interface and Cu 6 Sn 5 React so that there is no significant Cu 3 Sn is generated, so that the problems of Kendall holes and intermetallic compound textures can be well solved, and the service life of the micro welding spot is prolonged; when the height of the brazing filler metal is less than 30 mu m, the brazing filler metal can quickly react away when the brazing filler metal reflows to form a full intermetallic compound welding spot, so that the high-temperature service of low-temperature welding is realized; the process flow is convenient, and the method has good compatibility with the existing semiconductor and packaging technology.
Drawings
FIG. 1 is a schematic diagram of the structure of the assembly formed in step two of examples 1 and 3 of the present invention;
FIG. 2 is a schematic diagram of a structure of a combined product formed in step two in example 2 of the present invention;
FIG. 3 is a schematic diagram of a structure of a combined product formed in step two in embodiment 4 of the present invention;
FIG. 4 is a schematic diagram of a combined structure formed in the second embodiment of example 5 of the present invention;
FIG. 5 is a schematic structural view of a brazing filler metal micro-welding spot prepared by the invention;
FIG. 6 is a schematic view of a full IMC solder joint structure prepared by the present invention;
FIG. 7 is a cross-sectional profile of a microweld formed under the conditions of example 1;
in FIG. 7: the back scattering image of the section of the micro welding spot is shown in (a), (b) is an enlarged view of an interface region, and (c) is a contrast map of a region 2 (region 2) in the view of (b); (d) Is the interface Cu in the figure (c) 6 Sn 5 The inverse pole figure of (c);
FIG. 8 is a cross-sectional profile of a microweld formed under the conditions of example 5;
in fig. 8: (a) Is a micro-welding spot cross section back scattering image, and (b) is Cu in (a) 6 Sn 5 (c) is Cu in the graph (b) 6 Sn 5 The inverse pole figure of (c);
11 a first substrate, 21 a first metal pad, 12 a second substrate, 22 a second metal pad, 60 intermetallic compound (intermetallic compound) layers, 41 a first micro bump (or solder layer) and 42 a second micro bump (or solder layer); 31 first solderable layer, 70 tin-based micro solder joints, 32 second solderable layer, 50 solder.
Detailed Description
The first embodiment of the present invention will be further described with reference to fig. 1, fig. 2, fig. 5 and fig. 6.
Example 1:
the first scheme of the invention can be realized by the following process steps:
the method comprises the following steps: providing a first substrate 11, preparing an array of 20 multiplied by 30 nanocrystalline copper first metal bonding pads 21 with the thickness of 10 mu m by electroplating on the substrate, chemically plating an Au layer with the thickness of about 100nm on the prepared nanocrystalline copper first metal bonding pads 21 to serve as a first weldable layer 31, and electroplating a Sn solder layer 41 with the thickness of 15 mu m on the first weldable layer 31; providing a second substrate 12, preparing an array of 20 × 30 nanocrystalline copper second metal pads 22 with the thickness of 10 μm by electroplating on the substrate, and chemically depositing an OSP second weldable layer 32 on the prepared nanocrystalline copper second metal pads 22;
step two: coating a flux 50 on the surface of the OSP second solderable layer 32, aligning the first Sn solder layer 41 and the OSP second solderable layer 32 one by one, and placing them in contact to form a combination, as shown in FIG. 1;
step three: and (3) heating the combined body formed in the second step to 250 ℃ to perform hot-press reflow soldering (aiming at small-size soldering points), in the stages of temperature rising and heat preservation, connecting the substrates at two sides by the molten Sn solder layer 41, completely melting the first weldable layer 31 and the second weldable layer 32 in the solder, reacting the Sn solder layer 41 with the interfaces of the first metal pad 21 and the second metal pad 22, preserving the temperature for 2min, and completely converting the Sn solder into solid solder in the cooling stage to obtain the layered, polycrystalline and fine crystalline micro soldering point of the intermetallic compound, wherein the structure is shown in fig. 5.
FIG. 7 is a graph showing the solder joint profile, the interface contrast, and Cu 6 Sn 5 As can be seen from fig. 7 (a) and 7 (b), the interface intermetallic compound is generally in a layered form, and the main component is Cu 6 Sn 5 Without significant Cu 3 Sn is generated; from FIG. 7 (c), cu can be seen 6 Sn 5 The crystal grains are finer and have a submicron size, and as can be seen from the inverse pole figure of FIG. 7 (d), cu 6 Sn 5 Random orientation and no texture feature. Therefore, the structure of the micro welding spot can well solve the problems of the kirkendall hole and the intermetallic compound texture, and the service life of the micro welding spot or a device with the above material structure is prolonged.
Example 2:
the second scheme of the invention can be realized by the following process steps:
the method comprises the following steps: providing a first substrate 11, preparing an array of 20 multiplied by 30 nanocrystalline copper first metal bonding pads 21 with the thickness of 10 mu m by electroplating on the substrate, chemically plating an Au layer with the thickness of about 100nm on the prepared nanocrystalline copper first metal bonding pads 21 to serve as a first weldable layer 31, planting Sn3.0Ag0.5Cu solder balls on the first weldable layer 31 and refluxing to prepare Sn3.0Ag0.5Cu solder micro-bumps 41, wherein the first weldable layer 31 is completely dissolved in solder after refluxing; providing a second substrate 12, preparing an array of 20 × 30 nanocrystalline copper second metal pads 22 with the thickness of 10 μm by electroplating on the substrate, and chemically depositing an OSP second weldable layer 32 on the prepared nanocrystalline copper second metal pads 22;
step two: coating a flux 50 on the surface of the OSP second weldable layer 32, aligning the first Sn3.0Ag0.5Cu solder micro-bumps 41 and the OSP second weldable layer 32 one by one, and placing in contact to form a combination, as shown in FIG. 2;
step three: and (2) heating the combined body formed in the second step to 250 ℃ to perform (common) reflow soldering (aiming at large-size soldering spots), in the stages of temperature rising and heat preservation, connecting substrates on two sides by the molten Sn3.0Ag0.5Cu solder micro-convex points 41, completely melting the solder by the second weldable layer 32, reacting the solder micro-convex points 41 with the interfaces of the first metal bonding pad 21 and the second metal bonding pad 22, and completely converting the solder into solid solder in the cooling stage to obtain the layered, polycrystalline and fine-crystalline micro-soldering spots of intermetallic compounds, wherein the structure of the layered, polycrystalline and fine-crystalline micro-soldering spots is shown in fig. 5.
Example 3:
in the first scheme of the invention, the preparation of the all-intermetallic compound welding spot can be realized by the following process steps:
the method comprises the following steps: providing a first substrate 11, preparing an array of 20 multiplied by 30 nanocrystalline copper first metal bonding pads 21 with the thickness of 10 mu m by electroplating on the substrate, chemically plating an Au layer with the thickness of about 100nm on the prepared nanocrystalline copper first metal bonding pads 21 to serve as a first weldable layer 31, and electroplating a Sn solder layer 41 with the thickness of 15 mu m on the first weldable layer 31; providing a second substrate 12, preparing an array of 20 × 30 nanocrystalline copper second metal pads 22 with the thickness of 10 μm by electroplating on the substrate, and chemically depositing an OSP second solderable layer 32 on the prepared nanocrystalline copper second metal pads 22;
step two: coating a flux 50 on the surface of the OSP second solderable layer 32, aligning the first Sn solder layer 41 and the OSP second solderable layer 32 one by one, and placing them in contact to form a combination, as shown in FIG. 1;
step three: and (3) heating the combined body formed in the second step to 290 ℃ for hot-press reflow soldering, wherein in the stages of temperature rise and heat preservation, the first weldable layer 31 and the second weldable layer 32 are completely dissolved in the brazing filler metal, the Sn brazing filler metal layer 41 is in interface reaction with the first metal bonding pad 21 and the second metal bonding pad 22, and when the reaction is carried out for 3 minutes, the brazing filler metal is completely consumed, so that the micro soldering point with layered, polycrystalline and fine crystalline IMC (intrinsic mode copper) is prepared, and the structure of the micro soldering point is shown in figure 6.
FIG. 8 shows a solder joint profile and Cu of this example 6 Sn 5 As can be seen from fig. 8 (a), the interface IMC mainly contains Cu 6 Sn 5 No apparent Cu 3 Sn is generated; from FIG. 8 (b), it can be seen that Cu 6 Sn 5 The crystal grains are finer and the size is submicron, and from the inverse pole figure of FIG. 8 (c), cu 6 Sn 5 Random orientation and no texture feature. Therefore, the structure of the micro welding spot can well solve the problem of KendallThe problems of holes and IMC texture improve the service life of micro welding points or devices with the above material structures.
The second embodiment of the present invention will be further described with reference to fig. 3, 4, 5 and 6.
Example 4:
the method comprises the following steps: providing a first substrate 11, preparing an array of 20 multiplied by 30 nanocrystalline copper first metal bonding pads 21 with the thickness of 10 mu m by electroplating on the substrate, chemically plating a Ni-P layer with the thickness of about 100nm on the prepared nanocrystalline copper first metal bonding pads 21 to be used as a first weldable layer 31, and electroplating an Sn solder layer 41 with the thickness of 10 mu m on the first weldable layer 31; providing a second substrate 12, preparing an array of 20 × 30 nanocrystalline copper second metal bonding pads 22 with the thickness of 10 μm by electroplating on the substrate, chemically plating a Ni-P second weldable layer 32 with the thickness of about 100nm on the prepared nanocrystalline copper second metal bonding pads 22, and electroplating a Sn solder layer 42 with the thickness of 10 μm on the second weldable layer 32;
step two: coating flux 50 on the surface of the second solder layer 42, aligning the first solder layer 41 and the second solder layer 42 one by one, and placing them in contact to form an assembly, as shown in fig. 3;
step three: and (3) heating the combination formed in the second step to 260 ℃ for reflow soldering, fusing the melted first brazing filler metal layer 41 and the second brazing filler metal layer 42 into a whole in the stages of temperature rise and heat preservation, connecting the substrates on two sides, completely dissolving the first weldable layer 31 and the second weldable layer 32 in the brazing filler metal, enabling the liquid brazing filler metal to react with the interfaces of the first metal bonding pad 21 and the second metal bonding pad 22, and completely converting the brazing filler metal into the solid brazing filler metal in the cooling stage to obtain the layered, polycrystalline and fine crystalline micro-soldering point of the intermetallic compound, wherein the structure is shown in fig. 5.
Example 5:
the method comprises the following steps: providing a first substrate 11, preparing an array of 20 multiplied by 30 nanocrystalline copper first metal pads 21 with the thickness of 10 mu m by electroplating on the substrate, chemically plating an Au layer with the thickness of about 100nm on the prepared nanocrystalline copper first metal pads 21 to serve as a first weldable layer 31, planting Sn3.0Ag0.5Cu solder balls on the first weldable layer 31 and refluxing to prepare Sn3.0Ag0.5Cu solder micro-bumps 41, wherein the first weldable layer 31 is completely dissolved in solder after refluxing, and the solder and the first metal pads 21 have interface reaction; providing a second substrate 12, preparing an array of 20 × 30 nanocrystalline copper second metal pads 22 with the thickness of 10 μm by electroplating on the substrate, chemically plating a Ni-P second weldable layer 32 with the thickness of about 100nm on the prepared nanocrystalline copper second metal pads 22, and screen-printing Sn-58Bi soldering paste 42 on the second weldable layer 32;
step two: aligning the first solder micro-bumps 41 and the solder paste layers 42 one by one and placing them in contact to form an assembly, as shown in fig. 4;
step three: and (3) heating the assembly formed in the second step to 160 ℃ for reflow soldering, wherein in the stages of temperature rise and heat preservation, the solid first solder micro-bumps 41 are partially dissolved into a whole by the melted second solder layer 42, the substrates on two sides are connected, the second weldable layer 32 is completely dissolved in the solder, the liquid low-temperature solder is reacted with the interface of the second metal pad 22, and the solder is completely converted into the solid solder in the cooling stage, so that the layered, polycrystalline and fine crystalline micro-soldering points of the intermetallic compounds are prepared, and the structure of the micro-soldering points is shown in fig. 5.
Example 6:
in the second scheme of the invention, the preparation of the all-intermetallic compound welding spot can be realized by the following process steps:
the method comprises the following steps: providing a first substrate 11, preparing an array of 20 multiplied by 30 nanocrystalline copper first metal bonding pads 21 with the thickness of 10 mu m by electroplating on the substrate, chemically plating a Ni-P layer with the thickness of about 100nm on the prepared nanocrystalline copper first metal bonding pads 21 to be used as a first weldable layer 31, and electroplating an Sn solder layer 41 with the thickness of 10 mu m on the first weldable layer 31; providing a second substrate 12, preparing an array of 20 x 30 nanocrystalline copper second metal bonding pads 22 with the thickness of 10 microns by electroplating on the substrate, chemically plating a Ni-P second weldable layer 32 with the thickness of about 100nm on the prepared nanocrystalline copper second metal bonding pads 22, and electroplating an Sn brazing filler metal layer 42 with the thickness of 10 microns on the second weldable layer 32;
step two: coating flux 50 on the surface of the second solder layer 42, aligning the first solder layer 41 and the second solder layer 42 one by one, and placing them in contact to form an assembly, as shown in fig. 3;
step three: and (3) heating the combined body formed in the second step to 260 ℃ for reflow soldering, fusing the melted first brazing filler metal layer 41 and the second brazing filler metal layer 42 into a whole in the stages of temperature rise and heat preservation, connecting the substrates on two sides, completely dissolving the first weldable layer 31 and the second weldable layer 32 in the brazing filler metal, reacting the liquid brazing filler metal with the interfaces of the first metal pad 21 and the second metal pad 22, and finishing the reaction after 15 minutes to obtain the micro-soldering point with IMC in a layered, polycrystalline and fine crystalline state, wherein the structure of the micro soldering point is shown in fig. 6.
The above embodiments are further described in detail for the purpose of illustration, and the invention is not limited thereto, and the materials and process conditions used are limited to the above embodiments, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principle of the invention should be included in the scope of the invention.
Claims (10)
1. A micro welding spot based on a nanocrystalline copper matrix is characterized by comprising a first substrate and a second substrate, wherein the first nanocrystalline copper matrix is positioned on the first substrate and used as a first metal welding pad, the second nanocrystalline copper matrix is positioned on the second substrate and used as a second metal welding pad, and a connecting medium is positioned between the first nanocrystalline copper matrix and the second nanocrystalline copper matrix and comprises Sn brazing filler metal or Sn-based alloy brazing filler metal, and a layered intermetallic compound is arranged at the interface between the brazing filler metal and the nanocrystalline copper, namely a structure of the first metal welding pad, the intermetallic compound layer, the brazing filler metal, the intermetallic compound layer and the second metal welding pad is arranged between the first substrate and the second substrate.
2. A micro welding spot based on a nanocrystalline copper matrix is characterized by comprising a first substrate and a second substrate, wherein the first nanocrystalline copper matrix is positioned on the first substrate and used as a first metal welding pad, the second nanocrystalline copper matrix is positioned on the second substrate and used as a second metal welding pad, and a connecting medium is positioned between the first nanocrystalline copper matrix and the second nanocrystalline copper matrix, the connecting medium comprises Sn brazing filler metal or Sn-based alloy brazing filler metal, a layered intermetallic compound is arranged at the interface of the brazing filler metal and the nanocrystalline copper, when the height of the brazing filler metal is less than 30 mu m, the welding spot can be converted into a full intermetallic compound welding spot, and at the moment, a first metal welding pad-intermetallic compound layer-second metal welding pad structure is arranged between the first substrate and the second substrate.
3. The micro solder joint based on nano-crystalline copper matrix according to claim 1 or 2, characterized in that the grain size of copper in the nano-crystalline copper matrix is less than 200nm; the grain size of the intermetallic compound is less than 3 μm, and the intermetallic compound has no texture characteristics.
4. A method for preparing a micro solder joint based on a nanocrystalline copper matrix according to claim 1 or 2, characterized by comprising the following steps: carrying out a brazing reflow process on a combined structure formed by a first nanocrystalline copper matrix serving as a first metal pad and a second nanocrystalline copper matrix serving as a second metal pad, wherein brazing micro-bumps are arranged between the first substrate and the second substrate, preparing different products based on the size of brazing filler metal before brazing, and forming a first metal pad-intermetallic compound layer-brazing filler metal-intermetallic compound layer-second metal pad structure under a first working condition;
and under a second working condition, forming a first metal pad-intermetallic compound layer-second metal pad structure.
5. The preparation method according to claim 4, which specifically comprises the steps of:
the method comprises the following steps: providing a first substrate, and preparing at least one first metal pad on the first substrate; providing a second substrate, and preparing at least one second metal pad on the second substrate; the first metal bonding pad and the second metal bonding pad are made of the same material or different materials and have the same arrangement pattern; preparing a first weldable layer on the first metal bonding pad, preparing a brazing filler metal micro-bump on the first weldable layer, and preparing a second weldable layer on the second metal bonding pad;
step two: coating a welding flux on the second weldable layer, aligning the solder micro-bumps and the second weldable layer one by one, and placing the solder micro-bumps and the second weldable layer in contact to form a combined body;
step three: and C, performing brazing reflow on the combination formed in the step two, and forming a micro welding point after the reflow soldering.
6. The preparation method according to claim 4, which specifically comprises the steps of:
the method comprises the following steps: providing a first substrate, and preparing at least one first metal pad on the first substrate; providing a second substrate, and preparing at least one second metal pad on the second substrate; the first metal bonding pad and the second metal bonding pad are made of the same material or different materials and have the same arrangement pattern; preparing a first weldable layer on the first metal bonding pad, preparing a brazing filler metal micro-bump on the first weldable layer, preparing a second weldable layer on the second metal bonding pad, and preparing the brazing filler metal micro-bump on the second weldable layer;
step two: coating a welding flux on the micro-bumps of the first substrate, aligning the brazing filler metal micro-bumps on the first weldable layer with the brazing filler metal micro-bumps on the second weldable layer one by one, and placing the brazing filler metal micro-bumps and the second weldable layer in a contact manner to form a combined body;
step three: and C, performing brazing reflow on the combination formed in the step two, and forming a micro welding point after the reflow soldering.
7. The production method according to claim 5 or 6,
in the first step, the method for preparing at least one first metal pad on the first substrate and at least one second metal pad on the second substrate comprises one or more of electroplating, sputtering, vapor deposition, evaporation, ion plating and chemical plating;
methods of preparing a first solderable layer on the first metal pad and a second solderable layer on the second metal pad include electroplating, sputtering, or chemical deposition;
the method for preparing the brazing filler metal micro-convex points on the first weldable layer specifically comprises the following steps: preparing Sn-based solder on the first weldable layer by adopting electroplating, sputtering, vapor deposition and evaporation, and then preparing Sn-based solder micro-bumps; or preparing the Sn-based solder on the first weldable layer by adopting a screen printing or ball planting method, and then refluxing to prepare the Sn-based solder micro-convex points.
8. The method for preparing the solder micro-bumps according to the claim 5 or 6, wherein the Sn-based solder used In preparing the solder micro-bumps on the first weldable layer comprises pure Sn or Sn and any one or more of Ag, cu, in, bi, zn, ni, ga, sb and rare earth elements.
9. The method for preparing the solder mask according to claim 5 or 6, wherein the first solderable layer and the second solderable layer are made of a material including one or more of Ni, au, pd, ag, sn and an organic solderable protection layer.
10. The method of claim 5 or 6, wherein the step three solder reflowing is performed according to a predetermined reflow profile including a preheating zone, a reflow zone and a cooling zone, and the reflow zone has a peak reflow temperature at least 10 ℃ higher than the melting temperature of the microbumps.
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