CN108376706A - A kind of GaN base HEMT device and its manufacturing method - Google Patents
A kind of GaN base HEMT device and its manufacturing method Download PDFInfo
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- CN108376706A CN108376706A CN201810025898.6A CN201810025898A CN108376706A CN 108376706 A CN108376706 A CN 108376706A CN 201810025898 A CN201810025898 A CN 201810025898A CN 108376706 A CN108376706 A CN 108376706A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 24
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 12
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 12
- 150000002739 metals Chemical class 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 22
- 229910002601 GaN Inorganic materials 0.000 description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 35
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
A kind of GaN base HEMT device of present invention proposition and its manufacturing method, the device architecture include substrate, GaN layer, AlxGa1‑xN layers, AlN layers, Al2O3Dielectric layer, SiO2Dielectric layer, SiN side walls, barrier metal layer, grid metal electrode and source and drain metal electrodes, wherein use Al2O3/ AlN materials are as etching etch stop layers, using SiN as side wall, coordinate Al2O3Medium at grid metal, realizes the GaN grid slot techniques that etching is combined with corrosion jointly, reduces influence of the etching to grid slot, improves the reliability of device.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of GaN (gallium nitride) based hemts (high electron mobility crystalline substance
Body pipe) device and its manufacturing method.
Background technology
Wide bandgap semiconductor gallium nitride material is big with energy gap with it, critical breakdown electric field is high, electron saturation velocities
The features such as high, becomes the ideal material of new generation of semiconductor power device.In recent years, using AlGaN/GaN as the GaN base of representative
HEMT device structure generates high two-dimensional electron gas by piezoelectricity and spontaneous polarization, becomes the GaN base HEMT device of mainstream
Material structure.
During the realization of GaN device, the method for generally use etching etches away dielectric layer to AlGaN layer, then makes again
Grid metal is made, is especially that very, grid are groove etched to become highly important element manufacturing work to manufacture enhanced GaN-HEMT devices
Skill.But this concave grid groove technology is relatively high to etching apparatus requirement, and the groove etched meeting of grid is so that etching ion implanting grid slot
Under AlGaN layer in, to influence device stability and reliability.It is improved from there through process and structure, can will improve device
Part performance and technological level.
Invention content
The purpose of the present invention is be directed to disadvantage present in current GaN base HEMT device preparation process, it is proposed that a kind of GaN
Base HEMT device and its manufacturing method, the technique that manufacture GaN base HEMT device is optimized using this manufacturing method, improve device
Stability.
In order to achieve the above objectives, the present invention adopts the following technical scheme that：
A kind of GaN base HEMT device, including：
One substrate；
The GaN layer being epitaxially grown on the substrate；
The Al grown into GaN layerxGa1-xN layers；
In AlxGa1-xAn AlN layers grown on N layers；
The Al grown on AlN layers2O3Dielectric layer；
In Al2O3The SiO grown on dielectric layer2Dielectric layer；
In SiO2The grid slot being fabricated on dielectric layer and the two SiN side walls formed in the grid slot；
The barrier metal layer formed between the two SiN side walls in the grid slot；
The grid metal electrode made on the gate metal layer；
In AlxGa1-xTwo source and drain metal electrodes made on N layers.
In the above scheme, the GaN layer is channel layer, thickness 150-2000nm.
In the above scheme, the AlxGa1-xN layers are barrier layer, thickness 6-30nm.
In the above scheme, described AlN layers is barrier layer, act as etch stop layers, thickness 2-10nm.
In the above scheme, the Al2O3Dielectric layer act as etching cutoff layer, thickness 2-10nm.
In the above scheme, the SiO2Dielectric layer act as the molding of grid slot structure, thickness 300-400nm.
In the above scheme, the SiN lateral wall widths are 50-150nm.
In the above scheme, the barrier metal layer thickness is 50-150nm, can be W metals, can also be WSi alloy gold
Belong to；The grid metal electrode is Ti/Au double layer of metal, and thickness is respectively 10-30nm/100-500nm.
A kind of manufacturing method of GaN base HEMT device, step include：
(1) prepare a substrate；
(2) epitaxial growth GaN layer over the substrate；
(3) Al is grown in GaN layerxGa1-xN layers；
(4) in AlxGa1-xGrowing AIN layer on N layers；
(5) Al is grown on AlN layers2O3Dielectric layer；
(6) in Al2O3SiO is grown on dielectric layer2Dielectric layer；
(7) in SiO2Grid slot is made on dielectric layer；
(8) SiN matter, and the method for using plasma etching are grown in grid slot, and SiN side walls are formed in grid slot；
(9) method for using chemical attack, erodes Al2O3Dielectric layer and AlN layers；
(10) barrier metal layer is sputtered, and makes grid metal electrode；
(11) extra barrier metal layer is etched away；
(12) in AlxGa1-xSource and drain metal electrodes are made on N layers.
The above-mentioned production method the step of in (9), to ensure the uniformity of corrosion, corrosion is first using the side of number corrosion
Method, that is, use ozone treatment 5 to 30 minutes, the method for then using dilute hydrochloric acid corrosion, by Al2O3Dielectric layer and AlN layers of corrosion
Fall.
The above-mentioned production method the step of in (10), barrier metal layer material is W metals or WSi alloying metals.
The beneficial effects of the invention are as follows：
Method provided by the invention, by using Al2O3/ AlN materials are as etching etch stop layers, using SiN as side wall,
Coordinate Al2O3Medium at grid metal, utilizes Al jointly2O3The wet etching characteristic of/AlN, by GaN at original GaN device grid slot
With the etch step of AlGaN material layer, etching SiO is changed into2With SiN dielectric layers and corrosion AlN/Al2O3Layer, realize etching with
Corrode the grid slot technique for the GaN base HEMT device being combined, reduces influence of the etching to grid slot.It can will be relied in existing invention
Designed GaN material etching technics saves in the enhancement device production process of etching technics, reduces etching ion pair grid
The influence of slot reduces the dependence to GaN material etching machine bench, improves the reliability of device.
Description of the drawings
Fig. 1 is GaN base HEMT device structural schematic diagram in embodiment.
Fig. 2 is GaN base HEMT device manufacturing method flow chart in embodiment；
Reference sign：
101：Substrate；102：GaN layer；103：AlxGa1-xN layers；104：AlN layers；105：Al2O3Dielectric layer；106：SiO2It is situated between
Matter layer；107：SiN side walls；108：Barrier metal layer；109：Grid metal electrode；110：Source and drain metal electrodes.
Specific implementation mode
Features described above and advantage to enable the present invention are clearer and more comprehensible, special embodiment below, and institute's attached drawing is coordinated to make
Detailed description are as follows.
The present embodiment provides a kind of GaN base HEMT devices, and structure is as shown in Figure 1, include：
One substrate 101；
The GaN layer 102 being epitaxially grown on substrate 101；
The Al grown into GaN layer 102xGa1-xN layers 103；
In AlxGa1-xThe AlN layers 104 grown on N layers 103；
The Al grown on AlN layers 1042O3Dielectric layer 105；
In Al2O3The SiO grown on dielectric layer 1052Dielectric layer 106；
In SiO2The grid slot made on dielectric layer 106 and the two SiN side walls 107 formed in the grid slot；
The barrier metal layer 108 formed between the two SiN side walls 107 in the grid slot；
The grid metal electrode 109 being fabricated in barrier metal layer 108；
In AlxGa1-xTwo source and drain metal electrodes made on N layers.
The GaN layer 102 is channel layer, and thickness can be 150-2000nm.
The AlxGa1-xN layers 103 are barrier layer, and thickness can be 6-30nm.
The AlN layers 104 are barrier layer, act as etch stop layers, thickness can be 2-10nm.
The Al2O3Dielectric layer 105 act as etching cutoff layer, and thickness can be 2-10nm.
The SiO2Dielectric layer 106 act as the molding of grid slot structure, and thickness can be 300-400nm.
107 width of SiN side walls can be 50-150nm.
108 thickness of the barrier metal layer can be 50-150nm, can be W metals, can also be WSi alloying metals；Grid gold
Category electrode 109 is Ti/Au, and thickness can be respectively 10-30nm/100-500nm.
The present embodiment also provides a kind of manufacturing method of GaN base HEMT device, flow chart as shown in Figure 2, and step includes：
(1) prepare a substrate；
(2) epitaxial growth GaN layer over the substrate；
(3) AlxGa1-xN layers are grown in GaN layer；
(4) in AlxGa1-xGrowing AIN layer on N layers；
(5) Al is grown on AlN layers2O3Medium, row is at Al2O3Dielectric layer；
(6) in Al2O3SiO is grown on dielectric layer2Medium forms SiO2Dielectric layer；
(7) in SiO2Grid slot is made on dielectric layer；
(8) SiNx media, and the method for using plasma etching are grown in grid slot, and SiN side walls are formed in grid slot；
(9) method for using chemical attack, erodes Al2O3Dielectric layer and AlN layers；
(10) barrier metal layer is sputtered, and makes grid metal electrode；
(11) extra barrier metal layer is etched away；
(12) in AlxGa1-xSource and drain metal electrodes are made on N layers.
In step (9), for ensure corrosion uniformity, corrosion first using number corrosion method, with ozone treatment 5 to
30 minutes, the method for then using dilute hydrochloric acid corrosion, by Al2O3Dielectric layer and AlN layers erode.
In step (10), the barrier metal layer material of sputtering is selected as W metals or WSi metals.
By above-described embodiment it is found that this method uses Al2O3/ AlN materials are as etching etch stop layers, using SiN as side
Wall coordinates Al2O3Medium at grid metal, realizes the GaN grid slot techniques that etching is combined with corrosion jointly, reduces etching to grid
The influence of slot.It can be by GaN material designed in the enhancement device production process for depending on etching technics in existing invention
Etching technics saves, and reduces influence of the etching technics to device channel, reduces the defects of raceway groove and barrier layer, improve device
Reliability.
The above embodiments are merely illustrative of the technical solutions of the present invention rather than is limited, the ordinary skill of this field
Personnel can be modified or replaced equivalently technical scheme of the present invention, without departing from the spirit and scope of the present invention, this
The protection domain of invention should be subject to described in claims.
Claims (10)
1. a kind of GaN base HEMT device, including：
One substrate；
The GaN layer being epitaxially grown on the substrate；
The Al grown into GaN layerxGa1-xN layers；
In AlxGa1-xAn AlN layers grown on N layers；
The Al grown on AlN layers2O3Dielectric layer；
In Al2O3The SiO grown on dielectric layer2Dielectric layer；
In SiO2The grid slot being fabricated on dielectric layer and the two SiN side walls formed in the grid slot；
The barrier metal layer formed between the two SiN side walls in the grid slot；
The grid metal electrode made on the gate metal layer；
In AlxGa1-xTwo source and drain metal electrodes made on N layers.
2. a kind of GaN base HEMT device according to claim 1, which is characterized in that the GaN layer is channel layer, thickness
For 150-2000nm.
3. a kind of GaN base HEMT device according to claim 1, which is characterized in that the AlxGa1-xN layers are barrier layer,
Thickness is 6-30nm.
4. a kind of GaN base HEMT device according to claim 1, which is characterized in that described AlN layers is barrier layer, effect
For etch stop layers, thickness 2-10nm.
5. a kind of GaN base HEMT device according to claim 1, which is characterized in that the Al2O3Dielectric layer act as carving
Lose cutoff layer, thickness 2-10nm.
6. a kind of GaN base HEMT device according to claim 1, which is characterized in that the SiO2Dielectric layer act as grid slot
Shaping structures, thickness 300-400nm.
7. a kind of GaN base HEMT device according to claim 1, which is characterized in that the SiN lateral wall widths are 50-
150nm。
8. a kind of GaN base HEMT device according to claim 1, which is characterized in that the barrier metal layer thickness is 50-
150nm, material are W metals or WSi alloying metals；The grid metal electrode is Ti/Au double layer of metal, and thickness is respectively 10-
30nm/100-500nm。
9. a kind of manufacturing method of GaN base HEMT device, step include：
The epitaxial growth GaN layer on a substrate；
Al is grown in GaN layerxGa1-xN layers；
In AlxGa1-xGrowing AIN layer on N layers；
Al is grown on AlN layers2O3Dielectric layer；
In Al2O3SiO is grown on dielectric layer2Dielectric layer；
In SiO2Grid slot is made on dielectric layer；
SiNx media, and the method for using plasma etching are grown in grid slot, and SiN side walls are formed in grid slot；
Using the method for chemical attack, Al is eroded2O3Dielectric layer and AlN layers；
Barrier metal layer is sputtered, and makes grid metal electrode；
Etch away extra barrier metal layer；
In AlxGa1-xSource and drain metal electrodes are made on N layers.
10. according to the method described in claim 9, it is characterized in that, to ensure that the uniformity of chemical attack, chemical attack are first adopted
With the method for number corrosion, with ozone treatment 5 to 30 minutes, the method for then using dilute hydrochloric acid corrosion, by Al2O3Dielectric layer and
AlN layers erode.
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| CN201810025898.6A CN108376706A (en) | 2018-01-11 | 2018-01-11 | A kind of GaN base HEMT device and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534421A (en) * | 2019-08-26 | 2019-12-03 | 深圳市汇芯通信技术有限公司 | Grid production method and Related product |
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| US20130252386A1 (en) * | 2005-07-20 | 2013-09-26 | Cree, Inc. | Methods of fabricating nitride-based transistors with an etch stop layer |
| US20150243773A1 (en) * | 2014-02-24 | 2015-08-27 | International Business Machines Corporation | Iii-v semiconductor device having self-aligned contacts |
| CN107424919A (en) * | 2017-05-12 | 2017-12-01 | 中国电子科技集团公司第十三研究所 | A kind of low Damage Medium grid and preparation method thereof |
-
2018
- 2018-01-11 CN CN201810025898.6A patent/CN108376706A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130252386A1 (en) * | 2005-07-20 | 2013-09-26 | Cree, Inc. | Methods of fabricating nitride-based transistors with an etch stop layer |
| US20150243773A1 (en) * | 2014-02-24 | 2015-08-27 | International Business Machines Corporation | Iii-v semiconductor device having self-aligned contacts |
| CN107424919A (en) * | 2017-05-12 | 2017-12-01 | 中国电子科技集团公司第十三研究所 | A kind of low Damage Medium grid and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534421A (en) * | 2019-08-26 | 2019-12-03 | 深圳市汇芯通信技术有限公司 | Grid production method and Related product |
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