CN108353481B - 用于制造显示元件的方法和设备 - Google Patents
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Abstract
用于制造显示元件的方法和设备。一些实施方式包括用于选择性拾取粘附到处理层的多个电子器件的子集的方法。该方法包括更改多个电子器件中的一个或多个电子器件与粘附到的处理层之间的粘附水平,使得多个电子器件的子集具有小于由拾取工具PUT施加的力的对处理层的粘附水平。这使得能够通过PUT从处理层选择性地拾取多个电子器件的子集。
Description
技术领域
本发明涉及用于制造显示元件的方法和设备。本发明尤其应用于实现从处理层选择性拾取LED裸片。
背景技术
显示器无处不在,并且是许多可穿戴电子器件、智能电话、平板电脑、膝上型电脑、台式电脑、电视机和显示系统的核心部件。目前常见的显示技术从液晶显示器(LCD)到最近的有机发光二极管显示器(OLED)。
根据每个像素是否被单独驱动,显示器架构包括无源和有源矩阵显示器。有源驱动电路使用薄膜晶体管(TFT)技术,其中,基于非晶、氧化物或多晶硅技术的晶体管在玻璃面板上制造,该玻璃面板可具有从第一代的30厘米×40厘米到第十代(称为GEN10)的2.88米×3.15米的尺寸。
然而,在大多数便携式设备(即,电池供电设备)中,显示器使用大部分可用电池电力。此外,便携式设备最常见的用户问题是显示亮度不足。为延长电池寿命并提高亮度等级,可能需要降低功耗并产生来自光源的更高亮度发射。
无机发光二极管(ILED)显示器作为提供优异的电池性能和增强的亮度的下一代平面显示图像发生器而出现。在基本水平上,ILED显示器是有机发光二极管(OLED)显示器的变体。OLED将电流流经夹在两个玻璃平面之间的有机或高分子材料从而产生光。ILED在显示器的每个像素(每个像素由用于彩色显示器的三个单独的红色、绿色和蓝色LED组成)处,用分立的标准LED(其由无机材料制成)取代有机LED材料。
标准(即,无机)LED装置已经存在多年,并且随着LED产业已经追求许多商业机会-尤其是开发LED的挑战,其性能(效率、亮度、可靠性和使用寿命)已经优化多年,使其能够取代标准白炽灯泡用于普通照明应用,即,无机LED比新型和欠发展的OLED材料的效率更高、更明亮并且更加可靠。
显示器中每个像素处的单独可切换的标准的LED(R、G和B)的概念是众所周知的。这种方法广泛用于大型信息显示器。然而,迄今为止,因为标准LED通常是对光线方向控制而言效率低的平面芯片,还不可能将这种方法缩小到更小的显示器。此外,使用标准装配制造技术对笔记本电脑或智能手机显示器所需的数百万像素进行组装是不可行的。
发明内容
本文公开了用于ILED显示器的制造组装方法,即,以矩阵阵列组装数百万个无机LED裸片以生产LED显示器。
示例性实施方式涉及一种图案化处理层以便选择性地释放裸片用于拾取,并且使得可选拾取工具(PUT)能够在微组装中使用的方法。
处理层可以是UV带。利用仅在需要被拾取的LED下方(这被称为处理层的对应部分,因此其对应于LED装置的位置)的UV光选择性地照射(图案化)UV带。这些LED与带之间的粘附力降低,这允许在微组装拾取和放置循环的拾取动作期间由PUT拾取选定的芯片。
UV光可以来自可以用于图案化的任何UV源,诸如UV激光器、UV LED阵列或UV光和掩模。
可以替代地使用其他处理层,诸如热释放带、多层带或任何粘附可切换层。
该方法使得能够选择性地:从晶圆/处理层或基板移除已知的不良裸片,在转移打印操作期间拾取裸片用于放置仅已知的良好裸片,或在转移打印循环中在PUT上拾取全部LED阵列的减小的子集。
可选地,经照射的图案化处理的处理层可以增强而不是减少特定裸片对处理层的粘附,以便管理和控制裸片的拾取。
一些实施方式包括用于选择性拾取粘附到处理层的多个电子器件的子集的方法。该方法包括更改电子器件的子集与粘附至的处理层之间的粘附水平,使得电子器件的子集对处理层具有经更改的粘附水平;以及由拾取工具(PUT)通过向电子器件的子集施加大于电子器件的子集对处理层的经更改的粘附水平的力来将电子器件的子集从处理层分离。
电子器件的第二子集以大于由PUT施加的力的粘附水平粘附到处理层。当电子器件的子集与处理层分离时,该力不会将电子器件的第二子集与处理层分离。这样,电子器件的子集选择性地从处理层分离,而电子器件的第二个后续部分保持粘附到处理层。
更改粘附水平可以包括降低电子器件的子集与处理层的粘附水平。
PUT可以通过粘合将力施加到电子器件的子集。该方法可以进一步包括使PUT与电子器件的子集接触。
PUT可以是非选择性的PUT。
更改电子器件的子集与处理层之间的粘附水平可以包括:加热电子器件的子集和/或处理层的电子器件的子集所粘附的对应部分。
更改电子器件的子集与处理层之间的粘附水平可以包括:将液体刺激施加到电子器件的子集和/或处理层的电子器件的子集被粘附的对应部分。
更改电子器件的子集与处理层之间的粘附水平可以包括:控制处理层的微结构的粘附。
更改电子器件的子集与处理层之间的粘附水平可以包括:用光照射所述处理层的粘附电子器件的子集的相应部分。
光可以包括紫外(UV)光。
UV光可以源自以下中的一个或多个:UV激光器;UV LED阵列;或穿过光刻掩模的UV光源。
该方法可以进一步包括,在将电子器件的子集与处理层分离之后:更改电子器件的第二子集与粘附到的处理层之间的粘附水平,使得第二子集电子器件具有对处理层的更改的粘附水平;以及由PUT通过向电子器件的第二子集施加大于电子器件的第二子集对处理层的经更改的粘附水平的力来将电子器件的第二子集与处理层分离。
该方法可以进一步包括:由PUT将电子器件的子集转移到基板的缺陷电子器件从基板移除的位置处。
该方法可以进一步包括:在晶圆上制造电子器件;单片化晶圆上的电子器件;并将单片化的电子器件粘附到处理层。
粘附到处理层的电子器件可以包括发光二极管(LED)器件。
粘附到处理层的电子器件可以包括无机LED器件。
粘附到处理层的电子器件可以包括微型LED(μLED)器件,每个μLED器件包括μLED发射器,μLED发射器包括:基本上抛物面的台面结构体;台面结构体内的发光源;以及μLED器件的与台面结构体的顶部相对的一侧的主发射表面。
处理层可以包括以下任何一种:半导体晶圆;UV带;热释放带;多层带;或粘附能调节层。
该方法可以进一步包括:使用PUT将电子器件的子集转移到显示元件的基板。
一些实施方式可以包括具有计算机程序的非暂时性计算机可读存储介质,计算机程序包括指令,指令在由至少一个处理器执行时配置至少一个处理器以执行本文讨论的方法。
附图说明
图1示出了根据一个实施方式的μLED器件的示意图。
图2示出了根据一个实施方式的从商用平面LED器件输出的光束分布、从μLED器件输出的光束分布和单个像素束的图像。
图3示意性地示出了根据一个实施方式的μLED组装处理流程的概况。
图4A至4E示意性地示出根据一个实施方式的示例性“拾取和放置”处理的概况。
附图仅出于说明目的描绘了本公开的实施方式。本领域技术人员根据以下描述将容易认识到,在不脱离本文描述的公开的原理或益处的情况下,可以采用本文所示的结构和方法的替代实施方式。
具体实施方式
本文大体公开的是一种实现用于微组装的可选拾取工具(PUT)的方式。
本发明中的μLED技术指的是微米级ILED器件,其定向光输出并最大化用户观察到的亮度等级。如美国专利第7,518,149号中所公开的μLED是为提供定向光(即,仅定向至需要的地方)而专门开发的下一代LED技术。
μLED的直径通常小于20μm,在晶圆处理步骤期间直接在LED裸片上蚀刻至抛物线结构,以形成从芯片出射的准-准直光束(如图2、图1所示)。微ILED发射器包括与国际申请公开号WO 2004/097947(或美国专利号7,518,149)中提出的微ILED结构类似的微ILED结构,其由于其形状具有高提取效率并且输出准-准直光。图1中示出了微ILED 300,在微ILED300中,基板302具有位于其上的半导体外延层304。外延层304成形为台面306。有源(或光发射)层308被包围在台面结构体306中。台面306在与光发射或发射面310相对的一侧具有截顶。台面306也具有接近抛物线的形状,以形成针对在该器件内生成或检测到的光的反射外壳。箭头312示出了从有源层308发射的光如何以足以使其逃离LED器件300的角度(即,在全内反射角内)从台面306的壁反射朝向光出射表面310。器件的电接触垫在图1中未示出,但位于与发射面310相反的表面上。
参见图2,当与未成形或标准LED芯片相比时,该成形结构导致效率显着提高至低照明角度。μLED的增加的效率和准直输出使得其可以产生对于仅有纳安级驱动电流的人眼可见的光。
图3中公开了“微组装准备(μAssembly ready)”处理流程,基于用于蓝色和绿色发射μLED的蓝宝石材料系的GaN。应该理解,本发明不限于该材料系也不限于本公开中提出的处理流程的顺序。
该处理开始于在蓝宝石晶圆上外延层GaN和/或模板以及为ILED芯片制造和组装准备而定制的基板。
该处理中的初始步骤是μLED器件的制造以及p和n接触盘的制造。在μLED制造之后,通过界定硬掩模的光刻和在相邻器件之间的GaN外延层/模板中刻蚀典型的2μm宽、3-5μm深的沟槽干法刻蚀方法(例如,深反应离子刻蚀(DRIE)或电感耦接等离子体(ICP)刻蚀工具)的组合来在晶圆上部分单片化芯片。例如,使用深UV抗蚀剂和光刻工具来沉积并图案化SiOx硬掩模,以使用CF4/CHF3ICP蚀刻化学物质将界定的图案转移到SiOx中。接下来是第二氯基蚀刻化学物质以蚀刻GaN。硬掩模出于隔离目的而留在器件上。
在部分单片化之后,将用作后续处理步骤的处理层的机械(或处理)层(即,带)涂覆到顶部表面。一旦涂覆处理层,就使用激光束应用激光剥离处理,其移除蓝宝石基板。激光剥离处理是使用准分子激光光子将蓝宝石基板从GaN外延层分离的技术。该技术在制造HB-LED(高亮度)和柔性显示器时具有高产量和优异的质量的优势。
一旦蓝宝石基板分离,该结构准备好进行组装。如本文所公开的,组装可以使用拾取和放置技术以及通过更改每个电子器件对处理层的粘附性来进行。
本文公开了制造处理,其解决半导体芯片的组装以形成电子电路。一个实施方式可以是用于显示产品的ILED图像生成器。
因此,所公开的方法和装置的目的是提供使用多个ILED芯片的图像生成器和相关的制造方法,该多个ILED芯片被特别设计成使得它们能够与拾取工具(PUT)接触并与拾取工具(PUT)一致,以用于处理并操作到可包括薄膜晶体管(TFT)电路的玻璃面板上。
具体而言,本文公开了一种使得能够通过操纵其上安装有裸片的处理层的粘合性能来使用拾取工具(PUT)从处理层选择性地拾取ILED裸片(器件)的方法。该方法特别适用于使用微组装将LED裸片从晶圆或替代基板(处理层)转移至玻璃面板或类似基板的情况。
通过外部刺激使处理层粘附被选择性和局部地敏化和适应。例如,该刺激可以是光激活的、热激活的、液体激活的或者可选地通过用控制处理层的粘附特性的微结构来构造化处理层。在转移周期的拾取动作期间,在PUT与LED晶圆接触之前,刺激可以施加到要由PUT拾取的特定裸片(或者替代地,将不被PUT拾取的裸片)。
该方法有利于由于缺陷或参数故障而从处理晶圆选择性地拾取已知的良好裸片,或者,如果使用子集来完成整个图像发生器的组装,则替换性地拾取ILED裸片的整个阵列的子集。作为修理或更换周期的一部分,该方法也可以用于从晶圆或基板拾取不良裸片。
通常被构造为拾取二维阵列裸片的PUT将在与裸片源(其可以位于晶圆或替代基板上)接触的所有位置中由于PUT施加的拾取力而拾取裸片。在设计这样的系统时,必须确保PUT的拾取力超过LED裸片和处理晶圆/基板之间的粘附性。但是,在这种基本情况下,不可能有选择地更改这些力的平衡,以使某些特定的裸片保持不被拾取。本文公开的方法和设备能够实现这样的选择。这是通过在拾取动作之前更改LED裸片和处理晶圆/基板之间的粘附性来实现的,以确保仅有一些裸片(选定的裸片)具有小于由PUT提供的拾取力的粘附力(粘附水平),从而确保拾取这些裸片。可以使用类似的方法从基板选择性地去除已知的不良裸片。
为了构建显示器,利用PUT从处理层拾取第一组ILED并将其放置在玻璃面板(可选地包含TFT电路以控制ILED)上。随后以第二组LED重复该顺序,直到显示器完全填满。每组LED可以由数千个LED组成。
拾取和放置步骤的成功基于对处理的不同步骤之间的粘附级联的控制。
实际上,为了PUT成功拾取LED,PUT/LED粘附必须比LED/处理粘附更强。类似地,为了成功放置LED,基底/LED粘附接收必须比PUT/LED粘附更强。可替代地,可以打开和关闭在放置周期期间的PUT/LED粘附。
一些实施方式包括在LED处理层的对应于特定LED的区域中进行图案化的方法,以便控制其粘附并且选择性地释放选定的LED用于拾取。
最初,LED/处理粘附比PUT/LED粘附更强。所选LED下的LED/处理粘附选择性地减小,使其变得小于PUT/LED粘附。在这种情况下,所选LED将被PUT拾取,而其他LED则保留在处理层上。
在示例性布置中,处理层是UV带。该UV带仅在需要被拾取的LED下方用图案化的UV光照射。这些LED和带之间的粘附性降低,这允许PUT拾取芯片。
UV光可以来自可用于图案化的任何UV源:示例可以包括通过标准光刻掩模照射的标准UV光源、UV激光、或UVμLED阵列(无掩模光刻)。
在图4A至4E中给出了UV带情况下的整个拾取和放置处理的概况。
可以使用其他处理层来代替UV带。下面给出了一些示例:-热释放带:所选LED下方的区域通过激光或任何选择性热源加热;多层带:选定LED下方的层被激光或任何选择性蒸发源蒸发;或覆盖有粘附可切换层(UV胶、蜡等)的基板。
PUT可以是符合粘附参数的任何类型和材料。UV带甚至可以用作PUT。这里,PUT/LED粘附可以在拾取步骤之后通过UV照射而降低,这使得放置更容易。每个拾取和放置序列都使用新的UV带。
在商业ILED显示器上,所有LED应该是有用的。在典型的LED制造环境中,晶圆上的所有LED都被测试。这通常通过使用与晶圆上每个LED的P&N触点电接触的专业LED测试设备来实现。然而,当LED制造用于ILED显示器时,LED裸片比用于其他照明应用而生产的裸片小很多个数量级。在4”晶圆上可能有1亿个单独的LED裸片。这使得如果不是不可能测试每个裸片并创建已知的良好芯片(KGD)图,也是很困难的。
诸如本文所公开的可选择的拾取方法的一个用途,使得实现了使用未经测试的LED晶圆利用可选择的PUT来生产高产量ILED显示器的制造流程。在这样的流程中,PUT在第一个拾取和放置循环期间在每个位置处拾取LED。然后在玻璃面板上测试LED。第二个拾取和放置周期将仅在与玻璃面板上的测试周期期间检测到有缺陷或缺失的LED的位置匹配的PUT位置上拾取LED。通过所提出的方法和设备来实现这种可选择的拾取。使用本文概述的可选择的拾取方法,可以使用多个这种额外的拾取和放置循环来确保起作用的LED位于玻璃基板上的每个位置(100%起作用的显示像素)处,即,其中不可选择的PUT仅在PUT上的与在最后的测试周期期间检测到的有缺陷或缺失的LED的玻璃面板上的位置匹配的位置上拾取LED。
所提出的可选择拾取方法的另一用途涉及其中KGD图可用于LED晶圆的情况,诸如在使用适当的测试方法来创建KGD图之后。这是对上述处理的更改。可选拾取方法可用于在拾取和放置循环期间消除/防止拾取不良裸片,从而确保没有不良裸片被放置在玻璃基板上。由于这个原因,上述的随后的拾取和放置周期将回填玻璃基板上的在先前拾取和放置周期中没有接收LED的任何位置。
所提出的可选择的拾取方法的另一个用途是在将LED晶圆用于以上提出的ILED显示器制造处理之前“修复”LED晶圆。可选择的拾取方法可用于从晶圆或处理层选择性地移除(和丢弃)不良LED阵列。然后可以从另一个晶圆上拾取替换裸片,并放入第一晶圆的不良裸片被移除的位置。可能需要多次这样的更换周期来回填所有从中移除不良裸片的位置。这种方法将创建具有100%LED产量的LED晶圆/处理层。作为上述制造处理的输入的这种晶圆/处理层将产生100%产量的ILED显示器。
计算机程序可以被配置成提供上述方法中的任何一种。该计算机程序可以被提供在计算机可读介质上。该计算机程序可以是计算机程序产品。该产品可以包括非暂时性计算机可用存储介质。计算机程序产品可具有体现在被配置为执行该方法的介质中的计算机可读程序代码。计算机程序产品可以被配置为使至少一个处理器执行一些或全部方法。
本文参照计算机实现的方法、设备(系统和/或设备)和/或计算机程序产品的框图或流程图说明各种方法和设备。可以理解的是,框图和/或流程图的框、以及框图和/或流程图中的框的组合可以通过由一个或多个计算机电路执行的计算机程序指令来实现。这些计算机程序指令可以被提供给通用计算机电路、专用计算机电路和/或其他可编程数据处理电路的处理器电路以产生机器,使得经由计算机的处理器执行的指令和/或其它可编程数据处理设备变换和控制晶体管、存储在存储器位置中的值、以及此类电路内的其他硬件部件,以实现框图和/或流程图框或框中指定的功能/动作,从而创建手段(功能)和/或用于实现框图和/或流程图框中指定的功能/动作的结构。
计算机程序指令还可以存储在计算机可读介质中,该计算机可读介质可以指导计算机或其他可编程数据处理装置以特定方式运行,使得存储在计算机可读介质中的指令产生包括实现框图和/或流程图框或框中指定的功能/动作的指令的制造物品。
有形的非瞬态计算机可读介质可以包括电子、磁性、光学、电磁或半导体数据存储系统、装置或设备。计算机可读介质的更具体的示例包括:便携式计算机磁盘、随机存取存储器(RAM)电路、只读存储器(ROM)电路、可擦除可编程只读存储器(EPROM或闪存)电路、便携式光盘只读存储器(CD-ROM)以及便携式数字视频光盘只读存储器(DVD/蓝光)。
计算机程序指令还可以被加载到计算机和/或其他可编程数据处理装置上,以使得在计算机和/或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理,使得在计算机或其他可编程设备上执行的指令提供用于实现在框图和/或流程图或框中指定的功能/动作的步骤。
因此,本发明可以体现为在处理器上运行的硬件和/或软件(包括固件,常驻软件,微代码等),其可以共同被称为“电路”、“模块”或其变体。
还应该注意的是,在一些替代实施方式中,在框中标注的功能/动作可以不按流程图中标注的顺序发生。例如,连续示出的两个框根据所涉及的功能/动作实际上可以基本上同时执行,或者框有时可以以相反的顺序执行。此外,流程图和/或框图的给定块的功能可以被分成多个块、和/或者流程图和/或框图的两个或更多个块的功能可以至少部分地被集成。最后,可以在所示的块之间添加/插入其他块。
出于说明目的已经呈现了实施方式的前述描述;但并不旨在详尽无遗或将专利权限制为所披露的确切形式。相关领域的技术人员可以理解,鉴于上述公开,许多更改和变化是可能的。
本说明书中使用的语言主要是为了可读性和指导性目的而选择的,并且其可能未被选择为描绘或限制发明主题。因此,旨在专利权的范围不受该详细描述的限制,而是受限于基于此处的申请的任何权利要求。因此,实施方式的公开旨在说明而不是限制在以下权利要求中阐述的专利权范围。
Claims (9)
1.一种用于选择性拾取粘附到处理层的微型发光二极管μLED器件的子集的方法,所述方法包括:
降低所述μLED器件的子集与所述处理层之间的粘附水平,使得所述μLED器件的子集具有对所述处理层的经更改的粘附水平,
其中,粘附到所述处理层的所述μLED器件包括所述μLED器件的子集和所述μLED器件的第二子集,每个μLED器件包括粘附到所述处理层的第一侧面以及与所述第一侧面相反的第二侧面;
其中,所述μLED器件的第二子集以大于由拾取工具PUT施加的力的粘附水平粘附到所述处理层;
其中,降低所述μLED器件的子集与所述处理层之间的粘附水平包括:将液体刺激施加到所述μLED器件的子集和/或所述处理层的对应于所述μLED器件的子集所粘附的部分;
所述方法还包括由所述PUT通过向所述μLED器件的子集的所述第二侧面施加力,将所述μLED器件的子集从所述处理层分离,其中,所述力大于所述μLED器件的子集对所述处理层的经更改的粘附水平;
其中,当所述μLED器件的子集从所述处理层分离时,所述力不将所述μLED器件的第二子集与所述处理层分离;以及
通过所述PUT将所述μLED器件的子集转移到显示元件的基板。
2.根据权利要求1所述的方法,其中,所述PUT通过粘附将所述力施加到所述μLED器件的子集,所述方法进一步包括:使所述PUT与所述μLED器件的子集接触。
3.根据权利要求1所述的方法,其中,所述PUT是非选择性PUT。
4.根据权利要求1所述的方法,其中,粘附到所述处理层的所述μLED器件包括无机微型发光二极管(μLED)器件。
5.根据权利要求1所述的方法,其中,所述处理层包括以下各项中的一项:半导体晶圆;UV带;热释放带;多层带;或粘附能调节层。
6.根据权利要求1所述的方法,还包括:在将所述μLED器件的子集从所述处理层分离之后:
更改所述μLED器件的第二子集与所粘附的所述处理层之间的粘附水平,使得所述μLED器件的第二子集具有对所述处理层的经更改的粘附水平;以及
由所述PUT通过向所述μLED器件的第二子集施加大于所述μLED器件的第二子集对所述处理层的经更改的粘附水平的力,将所述μLED器件的第二子集从所述处理层分离。
7.根据权利要求1所述的方法,进一步包括:由所述PUT将所述μLED器件的子集转移到基板中不良的μLED器件从所述基板移除的位置处。
8.根据权利要求1所述的方法,还包括:
在晶圆上制造所述μLED器件;
单片化所述晶圆上的所述μLED器件;以及
将单片化的所述μLED器件粘附到所述处理层。
9.一种存储包括指令的计算机程序的非暂时性计算机可读介质,所述指令在由至少一个处理器执行时将所述至少一个处理器配置为:
降低微型光电二极管μLED器件的子集与处理层之间的粘附水平,使得所述μLED器件的子集具有对所述处理层的经更改的粘附水平,其中,粘附到所述处理层的所述μLED器件包括所述μLED器件的子集和所述μLED器件的第二子集,每个μLED器件包括粘附到所述处理层的第一侧面以及与所述第一侧面相反的第二侧面;
其中,所述μLED器件的第二子集以大于由拾取工具PUT施加的力的粘附水平粘附到所述处理层;
其中,降低所述μLED器件的子集与所述处理层之间的粘附水平包括:将液体刺激施加到所述μLED器件的子集和/或所述处理层的对应于所述μLED器件的子集所粘附的部分;
控制所述PUT通过向所述μLED器件的子集的所述第二侧面施加力,将所述μLED器件的子集从所述处理层分离,所述力大于所述μLED器件的子集对所述处理层的所述经更改的粘附水平;
其中,当所述μLED器件的子集从所述处理层分离时,所述力不将所述μLED器件的第二子集与所述处理层分离;以及
通过所述PUT将所述μLED器件的子集转移到显示元件的基板。
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