CN108336187B - 一种Ag/Cu2O异质结纳米薄膜的制备方法 - Google Patents

一种Ag/Cu2O异质结纳米薄膜的制备方法 Download PDF

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CN108336187B
CN108336187B CN201810148539.XA CN201810148539A CN108336187B CN 108336187 B CN108336187 B CN 108336187B CN 201810148539 A CN201810148539 A CN 201810148539A CN 108336187 B CN108336187 B CN 108336187B
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伍泳斌
钟福新
高云鹏
黎燕
莫德清
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Guilin University of Technology
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Abstract

本发明公开了一种Ag/Cu2O异质结纳米薄膜的制备方法。将纯Cu片和浓度为0.01~0.10mol/L Cu(NO3)2溶液，于80℃~90℃下反应4~6小时，在Cu片上制得光电压值为0.0937V~0.3168V的Cu2O薄膜；在Cu2O薄膜中加入浓度为0.05~0.09mol/L的Cu(NO3)2溶液和浓度为0.0005~0.0025mol/L的AgNO3溶液，于烘箱内反应2~8小时；得光电压值为0.3273V~0.3853V的Ag/Cu2O异质结纳米薄膜。本发明工艺简单，周期较短，对原料以及设备要求不高，制得的异质结纳米薄膜更有利于被太阳光激发而产生光生电子，具有优良的光电性能。

Description

一种Ag/Cu2O异质结纳米薄膜的制备方法
技术领域
本发明涉及一种Ag/Cu2O异质结纳米薄膜的制备方法。
背景技术
Cu2O是一种良好的半导体材料，不同条件下制备的Cu2O可能为n型或p型半导体。Cu2O不仅具有廉价、易生产、无毒、方便储存等优点，同时禁带宽度为1.9~2.1eV，能够直接利用太阳光可见光段能量95%以上，比单晶硅更具优势。Cu2O理论光电转换效率可以达到20%。是一种非常有潜力的太阳能电池材料。但是目前Cu2O的光电转换率仅为9%左右，为了提高Cu2O的光电性能，采用Ag和Cu2O构成异质结是一种有效的方法。由于Ag+的局部表面离子共振效应能增加对光的吸收，同时Cu2O的费米能级比Ag高，为使两者费米能级相等，在Cu2O和Ag之间会产生电子转移，促进Cu2O中光电子-空穴对分离，从而提高Cu2O的光电性能。
发明内容
本发明的目的是提供一种Ag/Cu2O异质结纳米薄膜的制备方法。
具体步骤为：
（1）先在反应釜中加入纯Cu片和浓度为0.01~0.10mol/L Cu(NO3)2溶液，于80℃~90℃下反应4~6小时，即在Cu片上制得光电压值为0.0937V~0.3168V的Cu2O薄膜。
（2）在装有步骤（1）所得的Cu2O薄膜的反应釜中加入浓度为0.05~0.09mol/L的 Cu(NO3)2溶液和浓度为0.0005~0.0025mol/L的 AgNO3溶液，于80℃~120℃的烘箱内反应2~8小时；即获得光电压值为0.3273V ~0.3853V的Ag/Cu2O异质结纳米薄膜。
本发明与其他相关技术相比，最显著的特点是通过两步水热法，即首先利用Cu片和Cu(NO3)2溶液制得Cu2O纳米薄膜；然后取性能最优的Cu2O纳米薄膜和Ag构成异质结。在第二步制备Ag/Cu2O异质结纳米薄膜的反应中，Ag+通过Cu2O晶体的间隙与Cu基底发生置换反应，在Cu2O晶体间隙中形成约300nm的Ag纳米粒子与Cu2O构成Ag/Cu2O异质结纳米薄膜。该异质结纳米薄膜更有利于被太阳光激发而产生光生电子，从而使其具有优良的光电性能，光电压可达到0.3853V。此方法工艺简单，周期较短，对原料以及设备要求不高，产品的光电性能较高。
具体实施方式
实施例1：
在反应釜中加入纯Cu片与浓度为0.01mol/L Cu(NO3)2溶液，80℃反应4小时，即获得光电压值为0.0937V的Cu2O纳米薄膜。
实施例2：
在反应釜中加入纯Cu片与浓度为0.1mol/L的 Cu(NO3)2溶液，90℃反应6小时，即获得光电压值为0.2359V的Cu2O纳米薄膜。
实施例3：
在反应釜中加入纯Cu片与浓度为0.06mol/L 的Cu(NO3)2溶液，80℃反应5小时，即获得光电压值为0.3168V的Cu2O纳米薄膜。
实施例4：
向实施例3所得光电压为0.3168V的Cu2O薄膜加入由浓度为0.05mol/L 的Cu(NO3)2和浓度为0.0025mol/L 的AgNO3组成的混合溶液，于90℃的烘箱内反应8小时，即得到光电压值为0.3793V的Ag/Cu2O异质结纳米薄膜。
实施例5：
向实施例3所得光电压为0.3168V的Cu2O薄膜加入由浓度为0.08mol/L 的Cu(NO3)2和浓度为0.002mol/L的 AgNO3组成的混合溶液，于120℃的烘箱内反应2小时，即得到光电压值为0.3273V的Ag/Cu2O异质结纳米薄膜。
实施例6：
向实施例3所得光电压为0.3168V的Cu2O薄膜加入由浓度为0.07mol/L 的Cu(NO3)2和浓度为0.001mol/L 的AgNO3组成的混合溶液，于90℃的烘箱内反应5小时，即得到光电压值为0.3853V的Ag/Cu2O异质结纳米薄膜。
实施例7：
向实施例3所得光电压为0.3168V的Cu2O薄膜加入由浓度为0.09mol/L 的Cu(NO3)2和浓度为0.0005mol/L 的AgNO3组成的混合溶液，于80℃的烘箱内反应6小时，即得到光电压值为0.3564V的Ag/Cu2O异质结纳米薄膜。

Claims (1)

1.一种Ag/Cu2O异质结纳米薄膜的制备方法，其特征在于具体步骤为：
（1）先在反应釜中加入纯Cu片和浓度为0.01~0.10mol/L Cu(NO3)2溶液，于80℃~90℃下反应4~6小时，即在Cu片上制得光电压值为0.0937V~0.3168V的Cu2O薄膜；
（2）在装有步骤（1）所得的Cu2O薄膜的反应釜中加入浓度为0.05~0.09mol/L的 Cu(NO3)2溶液和浓度为0.0005~0.0025mol/L的 AgNO3溶液，于80℃~120℃的烘箱内反应2~8小时；即获得光电压值为0.3273V ~0.3853V的Ag/Cu2O异质结纳米薄膜。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101774629A (zh) * 2010-01-06 2010-07-14 华中师范大学 p型和n型氧化亚铜薄膜的水热法可控制备
CN103691965A (zh) * 2013-12-20 2014-04-02 华南理工大学 一种铜/银异质结纳米粒子的制备方法
CN106268857A (zh) * 2015-06-12 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 金属/氧化亚铜复合光催化材料及其制备方法
CN106868540A (zh) * 2017-02-14 2017-06-20 西安理工大学 一种基于银修饰的纳米氧化亚铜光催化材料的制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105664966A (zh) * 2015-12-31 2016-06-15 丽王化工(南通)有限公司 金属/氧化亚铜复合纳米材料的制备方法和应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101774629A (zh) * 2010-01-06 2010-07-14 华中师范大学 p型和n型氧化亚铜薄膜的水热法可控制备
CN103691965A (zh) * 2013-12-20 2014-04-02 华南理工大学 一种铜/银异质结纳米粒子的制备方法
CN106268857A (zh) * 2015-06-12 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 金属/氧化亚铜复合光催化材料及其制备方法
CN106868540A (zh) * 2017-02-14 2017-06-20 西安理工大学 一种基于银修饰的纳米氧化亚铜光催化材料的制备方法

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