CN103928534B - 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法 - Google Patents

一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法 Download PDF

Info

Publication number
CN103928534B
CN103928534B CN201410157993.3A CN201410157993A CN103928534B CN 103928534 B CN103928534 B CN 103928534B CN 201410157993 A CN201410157993 A CN 201410157993A CN 103928534 B CN103928534 B CN 103928534B
Authority
CN
China
Prior art keywords
silicon
preparation
5mol
metal
battery sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410157993.3A
Other languages
English (en)
Other versions
CN103928534A (zh
Inventor
余锡宾
吴圣垚
杨海
吴刚
李宇生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Normal University
Original Assignee
Shanghai Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Normal University filed Critical Shanghai Normal University
Priority to CN201410157993.3A priority Critical patent/CN103928534B/zh
Publication of CN103928534A publication Critical patent/CN103928534A/zh
Application granted granted Critical
Publication of CN103928534B publication Critical patent/CN103928534B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种金属卤氧化物纳米膜/Si复合电池片及其制备方法。通过腐蚀沉积处理，能够在硅片表面沉积一层非致密的纳米膜，该纳米膜由金属卤氧化物纳米晶或量子点组成。具有粗糙表面的纳米晶或量子点有很好的陷光效果，减少太阳光在其表面的反射，提高硅基电池片对太阳光的吸收效率；并且利用纳米晶或量子点的量子限域效应和多激子效应，提高热载流子的分离与捕获效率，进而提高硅基太阳能电池的光电转化效率。上述硅基电池片为单晶硅、多晶硅、非晶硅或微晶硅半成品及成品太阳能电池片。此外，本发明具有工艺简单，原料易得，制作过程无污染，效率高，生产成本低的优点，因此适用于工业化大规模生产。

Description

一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法
技术领域
本发明涉及光电纳米材料及太阳能电池领域，具体说是一种半导体金属卤氧化物纳米薄膜/Si复合电池片的制备方法及其应用。
背景技术
在众多类型的太阳能电池中，晶硅电池是目前转换效率最高，技术最为成熟的光伏器件。晶硅太阳能电池的理论转化效率可达31％，实验报道的最高转化效率为25％，而工业化生产的成品电池效率约为15％。制约晶硅电池光电转换效率的主要原因其一是晶硅材料的光吸收效率不高：高于晶体硅能隙(1.12eV)的太阳光子以“热电子”的形式损耗。其二，电池板的光反射作用也影响了晶硅电池的光吸收效率。为了减少光反射，目前主要用表面织构化、表面蚀刻、发射区钝化、分区掺杂、溅射Si3N4减反射涂层等技术进行处理；但是，经过上述处理后的晶硅太阳能电池的光电转换效率并没有得到根本的改善；而且大大增加了生产成本。纳米晶或量子点具有吸收光谱宽、吸收系数高、能拓宽晶硅电池的吸收光谱范围；纳米晶或量子点还具有减缓热载流子冷却和电子驰豫的作用，可以使热载流子在冷却到带边之前，将它们捕获利用。所以，将纳米晶或量子点复合到晶硅太阳能电池上不仅充分利用了纳米材料优异的光捕获能力，而且具有粗糙表面的纳米晶或量子点有很好的陷光效果，有效减少了太阳光在硅片表面上的反射，提高硅基电池片对太阳光的吸收效率。并且半导体纳米晶或量子点具有消光系数高、本征偶极距大、调制能隙、容易离子化、产生多重激子的特性，使得量子效率可以超过100％，进而提高太阳能电池片的光电转换效率。
发明内容
本发明的目的在于提供一种简单高效的金属卤氧化物纳米薄膜/Si复合电池片的制备方法，在已经制作p-n结的晶硅电池片上，通过金属离子催化化学沉积方法，快速沉积生长一层20-100nm厚的非致密的纳米薄膜；该纳米膜由金属卤氧化物纳米晶或量子点组成。制作的金属卤氧化物纳米膜/Si复合电池片对太阳光谱的吸收效率和范围大大提高。这种方法工艺简单、成本低廉、节能环保、快速高效，适合工业化生产。
本发明的具体技术方案：
一种金属卤氧化物纳米膜/Si复合电池片的制备方法，包括以下步骤：
1)金属源溶液的配制：配制金属离子浓度为0.0001～1mol/L，氢氟酸浓度为0.05～5mol/L的金属源溶液；
2)腐蚀液的配制：配制0.05～5mol/L的氢氟酸和0.05～5mol/L的双氧水的混合溶液；
3)沉积液的配制：配制0.05～5mol/L的金属离子沉积液；
4)晶硅电池片的预处理：将做好p-n结的晶硅电池片浸入金属源溶液中1～300s，取出，沥干；再浸入0.05～5mol/L的氢氟酸和0.05～5mol/L的双氧水的混合溶液中1～300s，取出，沥干；最后浸入0.05～5mol/L的金属离子沉积液中1～300s，取出，沥干，吹干；
5)热处理：使用真空干燥箱120℃～240℃热处理1～10min。
步骤(1)使用的金属源为铜、银、铂或金的醋酸盐或硝酸盐中的一种。
步骤(3)中沉积液使用锑、铋、铜或锌的氯化物、溴化物、醋酸盐或硝酸盐中的一种为金属源。
所述晶硅电池片为单晶硅、多晶硅、非晶硅或微晶硅的半成品或成品太阳能电池片。
上述方法制备的金属卤氧化物纳米膜/Si复合电池片沉积的纳米膜厚度为20～100nm，形貌可控。
本发明所述的硅基太阳能电池片为单晶硅、多晶硅、非晶硅或微晶硅的半成品及成品太阳能电池片。经热处理后纳米膜紧密沉积在晶硅太阳能电池片表面，使其具有良好的表面陷光作用，可应用于成品及半成品硅基太阳能电池片的增效处理。
本发明提出的金属卤氧化物纳米膜/Si复合电池片的制备方法，具有以下特点和优点：
a)本发明的纳米膜紧密沉积在硅基太阳能电池片表面，使其具有较强的表面陷光作用，可以有效减少光反射，且充分利用半导体纳米晶或量子点的的多重激子效应，提高热载流子的分离与捕获效率，进而提高硅基太阳能电池的光电性能；
b)本发明所制备的纳米晶硅太阳能电池材料表面形貌均匀，且稳定性好；
c)本发明工艺操作方法简单快捷，原料易得；实验操作条件容易控制，具有很好的工业大规模应用前景；
d)制备的半导体金属氧化物纳米晶须/晶硅电池片可以大幅提高电池的开路电压、短路电流、填充因子以及光电转化效率。
附图说明
图1为沉积纳米膜的硅基电池片断面结构示意图。
图2为实施例1的沉积纳米膜后硅基电池片与未经处理样片光电性能对比图。
图3为实施例1的沉积纳米膜的硅基电池片FESEM平面图像。
图4为实施例1的沉积纳米膜的硅基电池片FESEM断面图像。
图5为实施例1的沉积纳米膜后硅基电池片与未经处理样片吸收光谱对比图。
图6为实施例1的沉积纳米膜后硅基电池片与未经处理样片反射光谱对比图。
具体实施方式
以下结合具体实施例对本发明的技术方案进一步说明，其目的仅在于更好理解本发明的内容而非限制本发明的保护范围。
实施例1
本实施例提供的金属卤氧化物纳米膜/Si复合电池片的制备方法，具体步骤如下：
a)配制0.001mol/L的金属源溶液：称量醋酸铜，加入一定量蒸馏水与40％的氢氟酸，使醋酸铜浓度为0.001mol/L，氢氟酸浓度为4.8mol/L。
b)配制腐蚀液：称量一定量氢氟酸与双氧水并加入蒸馏水加；配制得氢氟酸浓度为4.8mol/L，双氧水浓度为0.7mol/L。
c)配制沉积液：以无水乙醇为溶剂，配置0.05mol/L三氯化锑醇溶液。
d)将电池片浸入金属源溶液中15s，取出，沥干；再浸入腐蚀液中15s，取出，沥干；最后浸入到沉积液中20s，取出，用吹风机吹干表面。
e)使用真空干燥箱150℃热处理5min。
实施例2
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，称量醋酸铜，配置醋酸铜溶液浓度为0.005mol/L。
实施例3
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，称量醋酸铜，配置醋酸铜溶液浓度为0.01mol/L。
实施例4
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，金属源溶液为银离子溶液，浓度为0.001mol/L。
实施例5
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，金属源溶液为铂的溶液，浓度为0.005mol/L。
实施例6
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，金属源溶液为金的溶液，浓度为0.005mol/L。
实施例7
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，加入40％氢氟酸，使得氢氟酸浓度为2mol/L。
实施例8
本实施例的制备方法与实施例1相同，不同之处在于步骤a)，加入40％氢氟酸，使得氢氟酸浓度为3.5mol/L。
实施例9
本实施例的制备方法与实施例1相同，不同之处在于步骤b)，加入氢氟酸与双氧水，使得氢氟酸的浓度为2mol/L，双氧水的浓度为0.2mol/L。
实施例10
本实施例的制备方法与实施例1相同，不同之处在于步骤b)，加入氢氟酸与双氧水，使得氢氟酸的浓度为3.5mol/L，双氧水的浓度为0.5mol/L。
实施例11
本实施例的制备方法与实施例1相同，不同之处在于步骤c)，以无水乙醇为溶剂，配制0.05mol/L三溴化锑溶液。
实施例12
本实施例的制备方法与实施例1相同，不同之处在于步骤c)，以无水乙醇为溶剂，配制0.05mol/L三氯化铋溶液。
实施例13
本实施例的制备方法与实施例1相同，不同之处在于步骤d)，将电池片浸入金属源溶液中10s，取出，沥干；再浸入腐蚀液中10s，取出，沥干；最后浸入到沉积液中15s。
实施例14
本实施例的制备方法与实施例1相同，不同之处在于步骤d)，将电池片浸入金属源溶液中20s，取出，沥干；再浸入腐蚀液中20s，取出，沥干；最后浸入到沉积液中20s。
实施例15
本实施例的制备方法与实施例1相同，不同之处在于步骤d)，将电池片浸入金属源溶液中20s，取出，沥干；再浸入腐蚀液中20s，取出，沥干；最后浸入到沉积液中30s。
实施例16
本实施例的制备方法与实施例1相同，不同之处在于步骤d)，将电池片浸入金属源溶液中20s，取出，沥干；再浸入腐蚀液中30s，取出，沥干；最后浸入到沉积液中30s。
实施例17
本实施例的制备方法与实施例1相同，不同之处在于步骤(e)，使用真空干燥箱120℃热处理10min。
实施例18
本实施例的制备方法与实施例1相同，不同之处在于步骤(e)，使用真空干燥箱150℃热处理8min。
实施例19
本实施例的制备方法与实施例1相同，不同之处在于步骤(e)，使用真空干燥箱200℃热处理3min。
以上所述为本发明的较佳实施例而已，但本发明不应该局限于该实施例所公开的内容。所以凡是不脱离本发明所公开的原理下完成的等效或修改，都落入本发明保护的范围。

Claims (3)

1.一种金属卤氧化物纳米膜/Si复合电池片的制备方法，其特征在于，包括以下步骤：
1)金属源溶液的配制：配制金属离子浓度为0.0001～1mol/L，氢氟酸浓度为0.05～5mol/L的金属源溶液；金属源为铜、银、铂或金的醋酸盐或硝酸盐中的一种；
2)腐蚀液的配制：配制0.05～5mol/L的氢氟酸和0.05～5mol/L的双氧水的混合溶液；
3)沉积液的配制：配制0.05～5mol/L的金属离子沉积液；沉积液使用锑、铋、铜或锌的氯化物、溴化物、醋酸盐或硝酸盐中的一种为金属源；
4)晶硅电池片的预处理：将做好p-n结的晶硅电池片浸入金属源溶液中1～300s，取出，沥干；再浸入0.05～5mol/L的氢氟酸和0.05～5mol/L的双氧水的混合溶液中1～300s，取出，沥干；最后浸入0.05～5mol/L的金属离子沉积液中1～300s，取出，沥干，吹干；
5)热处理：使用真空干燥箱120℃～240℃热处理1～10min。
2.根据权利要求1所述的金属卤氧化物纳米膜/Si复合电池片的制备方法，其特征在于，晶硅电池片为单晶硅、多晶硅、非晶硅或微晶硅的半成品或成品太阳能电池片。
3.根据权利要求1-2任意一项所述的方法制备的金属卤氧化物纳米膜/Si复合电池片，其特征在于，沉积的纳米膜厚度为20～100nm，形貌可控。
CN201410157993.3A 2014-04-18 2014-04-18 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法 Expired - Fee Related CN103928534B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410157993.3A CN103928534B (zh) 2014-04-18 2014-04-18 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410157993.3A CN103928534B (zh) 2014-04-18 2014-04-18 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法

Publications (2)

Publication Number Publication Date
CN103928534A CN103928534A (zh) 2014-07-16
CN103928534B true CN103928534B (zh) 2016-09-07

Family

ID=51146694

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410157993.3A Expired - Fee Related CN103928534B (zh) 2014-04-18 2014-04-18 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法

Country Status (1)

Country Link
CN (1) CN103928534B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600154A (zh) * 2014-12-24 2015-05-06 上海师范大学 一种具有高量子效率的QDs/Si异质结复合晶硅片的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032933A2 (en) * 2008-09-16 2010-03-25 Lg Electronics Inc. Solar cell and texturing method thereof
KR20130102902A (ko) * 2012-03-08 2013-09-23 한국과학기술원 태양전지 및 그 제조방법
CN103545400A (zh) * 2013-09-27 2014-01-29 上海师范大学 Si纳米杆/QDs复合高效硅基太阳能电池片及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130036547A (ko) * 2011-10-04 2013-04-12 성균관대학교산학협력단 실리콘 태양전지 및 그의 제조 방법
CN102694073B (zh) * 2012-06-08 2015-07-01 上海师范大学 一种纳米晶/量子点敏化晶硅电池片的化学气相沉积制备方法
CN103647000B (zh) * 2013-12-20 2016-08-24 天威新能源控股有限公司 一种晶体硅太阳电池表面织构化工艺

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032933A2 (en) * 2008-09-16 2010-03-25 Lg Electronics Inc. Solar cell and texturing method thereof
KR20130102902A (ko) * 2012-03-08 2013-09-23 한국과학기술원 태양전지 및 그 제조방법
CN103545400A (zh) * 2013-09-27 2014-01-29 上海师范大学 Si纳米杆/QDs复合高效硅基太阳能电池片及其制备方法

Also Published As

Publication number Publication date
CN103928534A (zh) 2014-07-16

Similar Documents

Publication Publication Date Title
CN104993059B (zh) 一种硅基钙钛矿异质结太阳电池及其制备方法
CN106450001A (zh) 一种复合叠层钙钛矿太阳能电池及其制备方法
CN108123046A (zh) 一种钙钛矿/n型晶体硅叠层太阳电池及其制造方法
CN102299206A (zh) 一种异质结太阳电池及其制备方法
CN107293617A (zh) 一种高效低成本太阳能电池扩散工艺
CN106169537A (zh) 一种太阳能电池的制备方法
Hsueh et al. Crystalline-Si photovoltaic devices with ZnO nanowires
Wang et al. Effects of the concentration of PbI2 and CH3NH3I on the perovskite films and the performance of perovskite solar cells based on ZnO-TiO2 nanorod arrays
CN106876595B (zh) 一种n型硅异质结太阳能电池及其制备方法
KR100844505B1 (ko) 질화-산화알루미늄 박막 내의 음성 고정전하를 이용한 박판실리콘 태양전지의 제조방법
CN103928534B (zh) 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法
CN105280745B (zh) GaInP/GaAs /InGaAs/Ge四结级联太阳电池及其制作方法
CN110993707A (zh) 基于氧化镓多层堆叠结构的pin二极管及其制备方法
CN111886706A (zh) 串联太阳能电池的制造方法
CN104779305A (zh) 一种基于硅电池的上转换加场效应结构的太阳电池及其制备方法
CN102290450A (zh) 一种n型晶体硅太阳能电池
CN103268906B (zh) 硫化镉薄膜及具有硫化镉薄膜的太阳能电池的制备方法
CN102148279A (zh) 基于ⅱ-ⅵ族化合物半导体/硅纳米孔柱阵列的太阳能电池及其制备方法
CN107369729B (zh) 一种纳米有序互穿全氧化物异质结薄膜太阳电池及其制备方法
Ballipinar et al. Planar mixed halide perovskite-PCBM solar cells on flexible glass substrates processed at low temperature without ITO
CN103928571B (zh) 一种半导体金属氧化物纳米晶须/晶硅电池片及其制备方法
CN102694048B (zh) 一种金属硫化物纳米晶敏化晶硅电池片及其制备方法
CN202977493U (zh) 多晶硅薄膜太阳能电池
JP5516611B2 (ja) 太陽電池の製造方法及び太陽電池
CN105839063A (zh) 一种纯相透明氧化亚铜薄膜的制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160907

Termination date: 20190418