CN108335811A - A method of producing reverse side concave electrode thick film chip resistor - Google Patents
A method of producing reverse side concave electrode thick film chip resistor Download PDFInfo
- Publication number
- CN108335811A CN108335811A CN201810086239.3A CN201810086239A CN108335811A CN 108335811 A CN108335811 A CN 108335811A CN 201810086239 A CN201810086239 A CN 201810086239A CN 108335811 A CN108335811 A CN 108335811A
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- Prior art keywords
- layer
- resistor
- protective layer
- conductor
- thick film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
The invention discloses a kind of methods producing reverse side concave electrode thick film chip resistor, and the preparation method comprises the following steps：C2：Conductor layer back up；C1：It prints in conductor layer front；C4:It prints in conductor front；R：Printing and sintering；G1:Print first resistor layer protective layer；LT:Radium-shine cutting；G2:Print second resistance layer protective layer；G2‑B:Print 3rd resistor layer protective layer；MK:Character code indicates.C4 articulamentums are changed to back up by original front printing.Using platform suction press printing, impedance is effectively reduced, friction is reduced and resistance value is avoided to fail；And in the production method, wafer resistor does not need silver-coating process, reduces operational sequence, cost-effective, and improves the yields of product.
Description
Technical field
The present invention relates to production of electronic components fields, and in particular to the process of face concave electrode thick film chip resistor.
Background technology
With industry and consumer electronics product market to electronics miniaturization, high-performance, high reliability, safety and
The demand of Electro Magnetic Compatibility constantly proposes electronic circuit performance new requirement, and slice component is further to miniaturization, multilayer
Change, high capacity, high pressure resistant, integrated and high performance direction are developed.Wafer resistor meets this demand, but traditional
Thick film chip resistance product uses positive printing, and impedance is larger, and during resistor is installed and used, and be easy to cause this
Body collision, abrasion, are damaged so as to cause resistor.
Invention content
For deficiency in the prior art, the purpose of the present invention is to provide a kind of production reverse side concave electrode thick film chip electricity
The printing of traditional thick film chip resistance product front is changed to back up, can effectively reduce impedance, avoid collision by the method for hindering device
The case where friction causes resistance value to fail.
To achieve the above object, technical solution disclosed by the invention is as follows：A kind of production reverse side concave electrode thick film chip electricity
Hinder the method for device comprising following steps：
Step C2：Conductor layer back up：Shape and the position of the conductor printed will be needed, by screen painting in substrate
On the hole of the back side, ink is sucked into hole inner wall using vacuum pump, and reach certain depth；
Step C1：It prints in conductor layer front：Shape and the position of the conductor printed will be needed, by screen painting in substrate
On the hole of front, ink is sucked into hole inner wall using vacuum pump, and reach certain depth；
Step C4:It prints in conductor front：On the front electrode of product by halftone by printing machine after the completion of step C1
Stamp conductor shape and position；
Step R：Printing and sintering：Required resistance shape and position are stamped in substrate front side by printing machine by halftone, and
And the conductor layer printed in resistive layer and step C1 overlaps, and is then sintered conductor by 850 ° of stove；
Step G1:Print first resistor layer protective layer：It is printed on semi-finished product after the completion of step R by printing machine by halftone
Top resistive layer protective layer；The first resistor layer protective layer is covered on the resistive layer of step R；
Step LT:Radium-shine cutting：Radium-shine cutting is carried out at resistance position after the completion of step G1；
Step G2:Print second resistance layer protective layer：By halftone by printing machine on semi-finished product after the completion of step LT
Stamp second resistance layer protective layer；The second resistance layer protective layer is covered on the first resistor layer protective layer of step G1；
Step G2-B:Print 3rd resistor layer protective layer：Semi-finished product by halftone by printing machine after the completion of step G2
The back side stamp 3rd resistor layer protective layer；The 3rd resistor layer protective layer is covered in the of the back side of the semi-finished product of step G2
On two resistive layer protective layers；
Step MK:Character code indicates：Printing machine upper word of printing on product back side after the completion of step G2-B is passed through by halftone
Code mark；
Step is electroplated：Nickel plating is first carried out to granular semi-finished wafers resistor surface, it is then tin plating again；Obtain finished product
Wafer resistor；
Testing package：Several fabricated resistors are subjected to resistance value measurement one by one, are packed after test passes.
Preferably, the substrate is aluminium oxide ceramic substrate, and the thickness of the substrate is 0.3-0.6mm, the substrate
Size is (45-55) * (55-65) mm.
Preferably, in the conductor layer printed in the step C1 made of ink material, the viscosity of ink material is
400-500Pa.s。
Preferably, in the step R resistive layer made of ink material.
Preferably, the printed steel plate thickness used in the step G1 is 10 μ, and the mesh number of printed steel plate is 400H.
Preferably, the printed steel plate thickness used in the step G2 is 15 μ, and the mesh number of printed steel plate is 400H.
Preferably, in the electroplating process, the thickness of the nickel coating of each wafer resistor is 3.5-5.5 μm.
Preferably, in the electroplating process, the thickness of the tin coating of each wafer resistor is 5.5-7.5 μm.
The beneficial effects of the invention are as follows：The present invention is by process modification, by the resistance of traditional thick film chip resistance product
Layer, the positive conducting shells of C1, the first protective layer, the second protective layer, C4 articulamentums are changed to back up by original front printing.Using flat
Platform suction press printing effectively reduces impedance, reduces friction and resistance value is avoided to fail；And in the production method, chip
Resistor does not need silver-coating process, reduces operational sequence, cost-effective, and improves the yields of product.
Specific implementation mode
A method of producing reverse side concave electrode thick film chip resistor comprising following steps：
Step C2：Conductor layer back up：Shape and the position of the conductor printed will be needed, by screen painting in substrate
On the hole of the back side, ink is sucked into hole inner wall using vacuum pump, and reach certain depth；
Step C1：It prints in conductor layer front：Shape and the position of the conductor printed will be needed, by screen painting in substrate
On the hole of front, ink is sucked into hole inner wall using vacuum pump, and reach certain depth；
Step C4:It prints in conductor front：On the front electrode of product by halftone by printing machine after the completion of step C1
Stamp conductor shape and position；
Step R：Printing and sintering：Required resistance shape and position are stamped in substrate front side by printing machine by halftone, and
And the conductor layer printed in resistive layer and step C1 overlaps, and is then sintered conductor by 850 ° of stove；
Step G1:Print first resistor layer protective layer：It is printed on semi-finished product after the completion of step R by printing machine by halftone
Top resistive layer protective layer；The first resistor layer protective layer is covered on the resistive layer of step R；
Step LT:Radium-shine cutting：Radium-shine cutting is carried out at resistance position after the completion of step G1；
Step G2:Print second resistance layer protective layer：By halftone by printing machine on semi-finished product after the completion of step LT
Stamp second resistance layer protective layer；The second resistance layer protective layer is covered on the first resistor layer protective layer of step G1；
Step G2-B:Print 3rd resistor layer protective layer：Semi-finished product by halftone by printing machine after the completion of step G2
The back side stamp 3rd resistor layer protective layer；The 3rd resistor layer protective layer is covered in the of the back side of the semi-finished product of step G2
On two resistive layer protective layers；
Step MK:Character code indicates：Printing machine upper word of printing on product back side after the completion of step G2-B is passed through by halftone
Code mark；
Step is electroplated：Nickel plating is first carried out to granular semi-finished wafers resistor surface, it is then tin plating again；Obtain finished product
Wafer resistor；
Testing package：Several fabricated resistors are subjected to resistance value measurement one by one, are packed after test passes.
In the present embodiment, the substrate is aluminium oxide ceramic substrate, and the thickness of the substrate is 0.3-0.6mm, described
The size of substrate is (45-55) * (55-65) mm.
In the present embodiment, in the conductor layer printed in the step C1 made of ink material, ink material
Viscosity is 400-500Pa.s.
In the present embodiment, in the step R resistive layer made of ink material.
In the present embodiment, the printed steel plate thickness used in the step G1 is 10 μ, and the mesh number of printed steel plate is
400H。
In the present embodiment, the printed steel plate thickness used in the step G2 is 15 μ, and the mesh number of printed steel plate is
400H。
In the present embodiment, in the electroplating process, the thickness of the nickel coating of each wafer resistor is 3.5-5.5 μm.
In the present embodiment, in the electroplating process, the thickness of the tin coating of each wafer resistor is 5.5-7.5 μm.
In conclusion the present invention provides a kind of method producing reverse side concave electrode thick film chip resistor, the present invention passes through
To process modification, the positive conducting shell of resistive layer, C1 of traditional thick film chip resistance product, the first protective layer, the second protective layer, C4 are connected
It connects layer and back up is changed to by original front printing.Using platform suction press printing, impedance is effectively reduced, reduces friction
Resistance value is avoided to fail；And in the production method, wafer resistor does not need silver-coating process, reduces operational sequence, saves
Cost, and improve the yields of product.So the present invention effectively overcomes various shortcoming in the prior art and has height
Industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. a kind of method producing reverse side concave electrode thick film chip resistor, which is characterized in that it includes the following steps：
Step C2：Conductor layer back up：Shape and the position of the conductor printed will be needed, by screen painting at the back side of substrate
On hole, ink is sucked into hole inner wall using vacuum pump, and reach certain depth；
Step C1：It prints in conductor layer front：Shape and the position of the conductor printed will be needed, by screen painting in the front of substrate
On hole, ink is sucked into hole inner wall using vacuum pump, and reach certain depth；
Step C4:It prints in conductor front：It is stamped on the front electrode of product by halftone by printing machine after the completion of step C1
Conductor shape and position；
Step R：Printing and sintering：Required resistance shape and position, and electricity are stamped in substrate front side by printing machine by halftone
The conductor layer printed in resistance layer and step C1 overlaps, and is then sintered conductor by 850 ° of stove；
Step G1:Print first resistor layer protective layer：Electricity is stamped on semi-finished product after the completion of step R by printing machine by halftone
Resistance layer protective layer；The first resistor layer protective layer is covered on the resistive layer of step R；
Step LT:Radium-shine cutting：Radium-shine cutting is carried out at resistance position after the completion of step G1；
Step G2:Print second resistance layer protective layer：It is stamped on semi-finished product after the completion of step LT by printing machine by halftone
Second resistance layer protective layer；The second resistance layer protective layer is covered on the first resistor layer protective layer of step G1；
Step G2-B:Print 3rd resistor layer protective layer：The back of the body of semi-finished product by halftone by printing machine after the completion of step G2
Face stamps 3rd resistor layer protective layer；The 3rd resistor layer protective layer is covered in second electricity at the back side of the semi-finished product of step G2
On resistance layer protective layer；
Step MK:Character code indicates：Printing machine upper character code mark of printing on product back side after the completion of step G2-B is passed through by halftone
Show；
Step is electroplated：Nickel plating is first carried out to granular semi-finished wafers resistor surface, it is then tin plating again；Obtain finished product chip
Resistor；
Testing package：Several fabricated resistors are subjected to resistance value measurement one by one, are packed after test passes.
2. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
It is aluminium oxide ceramic substrate to state substrate, and the thickness of the substrate is 0.3-0.6mm, and the size of the substrate is (45-55) * (55-
65)mm。
3. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
It states in the conductor layer printed in step C1 made of ink material, the viscosity of ink material is 400-500Pa.s.
4. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
Resistive layer is stated in step R made of ink material.
5. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
It is 10 μ to state the printed steel plate thickness used in step G1, and the mesh number of printed steel plate is 400H.
6. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
It is 15 μ to state the printed steel plate thickness used in step G2, and the mesh number of printed steel plate is 400H.
7. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
It states in electroplating process, the thickness of the nickel coating of each wafer resistor is 3.5-5.5 μm.
8. a kind of method producing reverse side concave electrode thick film chip resistor according to claim 1, which is characterized in that institute
It states in electroplating process, the thickness of the tin coating of each wafer resistor is 5.5-7.5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810086239.3A CN108335811A (en) | 2018-01-30 | 2018-01-30 | A method of producing reverse side concave electrode thick film chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810086239.3A CN108335811A (en) | 2018-01-30 | 2018-01-30 | A method of producing reverse side concave electrode thick film chip resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108335811A true CN108335811A (en) | 2018-07-27 |
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ID=62926069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810086239.3A Pending CN108335811A (en) | 2018-01-30 | 2018-01-30 | A method of producing reverse side concave electrode thick film chip resistor |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338890A (en) * | 2000-07-28 | 2002-03-06 | 松下电器产业株式会社 | Electronic elements and manufacture thereof |
| CN101488385A (en) * | 2008-01-16 | 2009-07-22 | 上海思麦电子有限公司 | Macro-molecular base transient voltage suppressing element and manufacturing method thereof |
| CN201527866U (en) * | 2009-09-18 | 2010-07-14 | 昆山厚声电子工业有限公司 | Surface mounted concave type electrode network resistor |
| CN105551701A (en) * | 2015-12-31 | 2016-05-04 | 旺诠科技(昆山)有限公司 | Chip resistor production method capable of avoiding failure of resistance value |
| CN105551702A (en) * | 2015-12-31 | 2016-05-04 | 旺诠科技(昆山)有限公司 | Chip resistor array vacuum coating method |
-
2018
- 2018-01-30 CN CN201810086239.3A patent/CN108335811A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338890A (en) * | 2000-07-28 | 2002-03-06 | 松下电器产业株式会社 | Electronic elements and manufacture thereof |
| CN101488385A (en) * | 2008-01-16 | 2009-07-22 | 上海思麦电子有限公司 | Macro-molecular base transient voltage suppressing element and manufacturing method thereof |
| CN201527866U (en) * | 2009-09-18 | 2010-07-14 | 昆山厚声电子工业有限公司 | Surface mounted concave type electrode network resistor |
| CN105551701A (en) * | 2015-12-31 | 2016-05-04 | 旺诠科技(昆山)有限公司 | Chip resistor production method capable of avoiding failure of resistance value |
| CN105551702A (en) * | 2015-12-31 | 2016-05-04 | 旺诠科技(昆山)有限公司 | Chip resistor array vacuum coating method |
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Application publication date: 20180727 |