CN108321311A - The preparation method and silicon substrate OLED display modules of silicon substrate OLED - Google Patents
The preparation method and silicon substrate OLED display modules of silicon substrate OLED Download PDFInfo
- Publication number
- CN108321311A CN108321311A CN201810123726.2A CN201810123726A CN108321311A CN 108321311 A CN108321311 A CN 108321311A CN 201810123726 A CN201810123726 A CN 201810123726A CN 108321311 A CN108321311 A CN 108321311A
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- oled
- mask plate
- wafer
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of preparation methods of silicon substrate OLED, include the following steps：S1, several silicon substrate mask plates with vapor deposition pixel graphics are prepared；S2, the silicon substrate mask plate with respective pixel figure is chosen；S3, the silicon substrate mask plate is bonded with the contraposition of wafer, and corresponding OLED functions tunic is deposited；After S4, OLED function tunic are deposited, the silicon substrate mask plate and the wafer are detached using isolation technics；Remaining the function tunic for preparing silicon substrate OLED is vaporized on the wafer by S5, repetition step S2~S4 respectively, and silicon substrate OLED matrixes are made；S6, the silicon substrate OLED matrixes in the step S5 are packaged, the preparation of silicon substrate OLED terminates.The preparation method and silicon substrate OLED display modules of the silicon substrate OLED of the present invention, the use and white light OLED for reducing CF layers are prepared separately, so that the brightness of silicon substrate OLED display modules improves 4 times, while improving the PPI of silicon substrate OLED and simplifying the preparation process of silicon substrate OLED.
Description
Technical field
The present invention relates to the preparation method of silicon substrate OLED a kind of and silicon substrate OLED display modules, belong to OLED display manufacture
Field.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) displays and CTR (Cathode
Ray Tube, cathode-ray tube) display or TFT-LCD (Thin Film Transistor-Liquid Crystal
Display, Thin Film Transistor-LCD) compared to lighter and thinner appearance design, broader visual perspective, faster
Response speed and the features such as lower power consumption, therefore OLED display gradually shows equipment as the next generation and receives people
Concern.
In the prior art, common OLED device includes that (Passive Matrix OLED, passive-matrix are organic by PMOLED
Electric exciting light-emitting diode) and AMOLED (Active Matrix OLED, active matrix organic light-emitting diode or active-matrix have
Machine light-emitting diode).Wherein, AMOLED is in preparation process, by FFM (Fine Metal Mask, high-precision metal mask version)
The influence of technology acuracy so that the PPI (Pixels Per Inch, the number of pixels that per inch is possessed) of AMOLED can only reach
To 300~700, it is unable to reach the requirement of higher PPI；And silicon substrate OLED display device is different from routine using non-crystalline silicon, crystallite
Silicon or the AMOLED devices that low-temperature polysilicon film transistor is backboard, using silicon single crystal wafer as substrate, Pixel Dimensions are tradition
The 1/10 of display device, fineness is significantly larger than traditional devices so that the PPI of silicon substrate OLED display device reaches 2000 or more.
Meanwhile silicon substrate OLED display device realizes that the mode of true color is white light OLED and CF layers of (Color at present
Filter, colored filter) combination mode, ensure CF layers of High precision using semiconductor lithography processing procedure, to improve silicon substrate
OLED display device resolution ratio；However, in actual application, since CF layers of light transmittances are less than 30%, easily leading to silicon substrate
Light loss occurs during display for OLED so that the maximum brightness of silicon substrate OLED display device is low；Further, since CF layers of pair
Position Anawgy accuracy requires height, and CF layers are bonded offset with white light OLED and will lead to silicon substrate OLED display device light extraction colour contamination, limit
Silicon substrate OLED display device PPI's further increases.
In view of this, but it is necessary to be improved to existing silicon substrate OLED display modules and preparation method thereof, in solution
State problem.
Invention content
The purpose of the present invention is to provide a kind of preparation method of silicon substrate OLED, this method is prepared by controlling silicon substrate OLED
The setting precision of mask plate and the selection of mask plate in the process, the use and white light OLED for eliminating CF layers are prepared separately,
While improving the PPI of silicon substrate OLED, simplify the preparation process of silicon substrate OLED.
For achieving the above object, the present invention provides a kind of preparation methods of silicon substrate OLED, wherein the silicon substrate
The preparation method of OLED includes the following steps：
S1, several silicon substrate mask plates with vapor deposition pixel graphics are prepared；
S2, the OLED function tunics according to required vapor deposition choose the silicon substrate mask plate with respective pixel figure；
S3, using label location technology, the silicon substrate mask plate is bonded with the contraposition of wafer, and corresponding OLED is deposited
Function tunic；
After S4, OLED function tunic are deposited, the silicon substrate mask plate and the wafer are detached using isolation technics；
Remaining the function tunic for preparing OLED is vaporized on the wafer by S5, repetition step S2~S4 respectively, and silicon is made
Base OLED matrixes；
S6, the silicon substrate OLED matrixes in the step S5 are packaged, the preparation of silicon substrate OLED terminates.
As a further improvement on the present invention, the silicon substrate mask plate is at least provided with 3 kinds, respectively feux rouges mask plate, green
Photomask board and blue light mask plate；Each mask plate can be according to reality at least provided with the pixel graphics of the 1 piece and every piece mask plate
It is prepared by border situation.
As a further improvement on the present invention, the step S1 is specially：
S11, silicon substrate is chosen, and photoresist is coated on the surface of the silicon substrate, using photoetching process in the photoetching
Exposure prepares pixel graphics on glue；
S12, using suitching type etching technics according to the pixel graphics, the silicon substrate is performed etching, and in silicon substrate
After plate etches, the photoresist of silicon substrate is removed；
S13, using thinning technique, the silicon substrate in step S12 is thinned so that pixel graphics penetrate the silicon substrate
Silicon substrate mask plate is made in plate.
As a further improvement on the present invention, in the step S13, the thinning technique is specially to be thrown using chemical machinery
The silicon substrate for being etched with pixel graphics is thinned in light technology.
As a further improvement on the present invention, the step S2 is specially：
S21, the surface being bonded to each other to the wafer and the silicon substrate mask plate are cleaned, in the wafer and described
Positioning datum point is chosen on the corresponding position of silicon substrate mask plate, and interim bonding is coated at the position of the positioning datum point
Layer；
S22, separating layer is coated at described remaining position of silicon substrate mask plate, and use location technology, complete the silicon substrate
The contraposition of mask plate and the wafer；
S23, it is heated to aligning the silicon substrate mask plate after being bonded and the wafer in the step S22 so that
It is bonded temporarily between the silicon substrate mask plate and the wafer.
As a further improvement on the present invention, the step 4 is specially：Silicon substrate mask plate is interrupted using laser separation technique
And the combination interface at wafer positioning datum point position, complete the separation of silicon substrate mask plate and wafer
As a further improvement on the present invention, the step S2 is specially：
S21, cleaning and hydrophilic activation process are carried out to the surface that the wafer and the silicon substrate mask plate are bonded to each other, and
Positioning datum point is chosen in the corresponding position of the silicon substrate mask plate and wafer；
S22, using location technology, complete the contraposition of the silicon substrate mask plate and the wafer so that the silicon substrate mask
Version and the wafer realize fitting under the action of covalent bond.
As a further improvement on the present invention, the step S4 is specially：To the silicon substrate mask plate to fit together
And the wafer is heated, the breaking of covalent bonds between the silicon substrate mask plate and the wafer simultaneously forms hydrogen, with separation
The silicon substrate mask plate and the wafer.
As a further improvement on the present invention, the positioning datum point is chosen at the wafer not yet vapor deposition function tunic
At position.
For achieving the above object, the present invention provides a kind of silicon substrate OLED display modules, including from top to bottom successively
The outer package layer and silicon substrate oled layer of arrangement, wherein the silicon substrate oled layer uses the preparation method system of silicon substrate OLED above-mentioned
At.
The beneficial effects of the invention are as follows：The preparation method of the silicon substrate OLED of the present invention is by controlling silicon substrate OLED preparation process
The preparation process of middle mask plate and the selection of mask plate improve the preparation precision of pixel graphics on mask plate, are further promoted
The vapor deposition accuracy of OLED function tunics, the full-color display that silicon substrate OLED can be completed without CF layers eliminate CF layers of use
And white light OLED is prepared separately, and while improving the PPI of silicon substrate OLED, simplifies the preparation process of silicon substrate OLED.
Description of the drawings
Fig. 1 is the flow chart of the preparation method of silicon substrate OLED of the present invention.
Fig. 2 is the flow chart of step S1 in Fig. 1.
Fig. 3 is the flow chart of step S2 first embodiments in Fig. 1.
Fig. 4 is the flow chart of step S2 second embodiments in Fig. 1.
Fig. 5 is the structural schematic diagram of silicon substrate OLED display modules of the present invention.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Refering to Figure 1, the flow chart of the preparation method for silicon substrate OLED of the present invention.The preparation side of the silicon substrate OLED
Method includes the following steps：
S1, several silicon substrate mask plates with vapor deposition pixel graphics are prepared；
S2, the OLED function tunics according to required vapor deposition choose the silicon substrate mask plate with respective pixel figure；
S3, using label location technology, the silicon substrate mask plate is bonded with the contraposition of wafer, and corresponding OLED is deposited
Function tunic；
After S4, OLED function tunic are deposited, the silicon substrate mask plate and the wafer are detached using isolation technics；
Remaining the function tunic for preparing OLED is vaporized on the wafer by S5, repetition step S2~S4 respectively, and silicon is made
Base OLED matrixes；
S6, the silicon substrate OLED matrixes in the step S5 are packaged, the preparation of silicon substrate OLED terminates.
Following description part will illustrate step S1~S6.
In the present invention, step S0, the step S0 are additionally provided with before the step S1 is specially：Wafer is chosen, and in institute
The surface for stating silicon substrate prepares display driver circuit and pixel-driving circuit (tft array), further, the display driving electricity
It is additionally provided with OLED anode layers on road and pixel-driving circuit (tft array).Specifically, the display driver circuit, the picture
Plain driving circuit and the OLED anode layers are prepared by manufacture of semiconductor technology；Meanwhile when using manufacture of semiconductor
When technology prepares the wafer, the OLED anode layers are using film layer structure made of Al and TiN.
Certainly in other embodiments, the OLED anode layers can also be prepared by the way of sputtering and dry etching,
And at this point, the material of the OLED anode layers is Ag and ITO (tin indium oxide).
It should be noted that in the present invention, the preparation method of the preparation of the wafer and the wafer of the prior art is basic
Unanimously, therefore the preparation flow of the wafer is repeated no more in this.
It please refers to shown in Fig. 2, is the flow chart of step S1 of the present invention.The step S1 is specially：
S11, silicon substrate is chosen, and photoresist is coated on the surface of the silicon substrate, using photoetching process in the photoetching
Exposure prepares pixel graphics on glue；
S12, using suitching type etching technics according to the pixel graphics, the silicon substrate is performed etching, and in silicon substrate
After plate etches, the photoresist of silicon substrate is removed；
S13, using thinning technique, the silicon substrate in step S12 is thinned so that pixel graphics penetrate the silicon substrate
Silicon substrate mask plate is made in plate.
Specifically, the silicon substrate mask plate is equipped with 3 kinds, respectively feux rouges mask plate, green light mask plate in the present invention
And blue light mask plate, to correspond to the vapor deposition of corresponding color organic/inorganic materials during OLED function tunics are deposited respectively；Its
In, each mask plate (feux rouges mask plate, green light mask plate and blue light mask plate) is at least provided with 1 piece, and every piece of mask plate
The pixel graphics of (feux rouges mask plate, green light mask plate and blue light mask plate) can be prepared according to actual conditions, each to ensure
The accurate vapor deposition of layer OLED function tunics.
Further, in the step S12, the suitching type etching technics (Bosch techniques) includes alternately
Etch step and deposition step, i.e., in Bosch etching processes, with fluorine-containing (such as SF6) plasma gas chemical method, according to
The pixel graphics that photoresist exposes etch silicon substrate, and etched hole is formed on the silicon substrate after etching a period of time；So
Afterwards, using carbon fluorine (such as C4F8, CF layers4Or CHF3) plasma gas is passivated the inner wall of etched hole, after being passivated a period of time
Continue to etch, so cycle is performed etching and is passivated, and completes the etching of pixel graphics, to ensure to use Bosch techniques pair
The anisotropy that silicon substrate performs etching.Simultaneously as Bosch techniques, which belong to semiconductor, is made technique, therefore works as and use Bosch
When technique performs etching silicon substrate, the slit of pixel graphics is less than 10 μm on controllable silicon substrate, substantially increases silicon substrate and covers
The making precision of film version ensures the accuracy that OLED function tunics are deposited in subsequent process, is shown with reaching promotion silicon substrate OLED
The purpose of device PPI.
Certainly, in other embodiments of the invention, the etching of pixel graphics can be on silicon substrate in the step S12
Prepared by other TSV (silicon hole technology) technologies, on the silicon substrate preparation of pixel graphics can be carried out according to actual conditions
Selection.
In the step S13, the thinning technique is specially using chemical Mechanical Polishing Technique to being etched with pixel graphics
Silicon substrate be thinned it is follow-up to facilitate so that pixel graphics of the etching on the silicon substrate run through the silicon substrate
Vapor deposition use.Certainly in other embodiments, the thinned of the silicon substrate can also be completed by way of etching, described to be thinned
The specific choice of technology can be carried out according to actual conditions.
It please refers to shown in Fig. 3, is the flow chart of step S2 in first embodiment of the invention.The step S2 is specially：
S21, the surface being bonded to each other to the wafer and the silicon substrate mask plate are cleaned, miscellaneous to remove crystal column surface
Remain in the impurity on silicon substrate mask plate surface in matter and silicon substrate mask plate process；After cleaning, in the wafer
And positioning datum point is chosen on the corresponding position of the silicon substrate mask plate, and coated temporarily at the position of the positioning datum point
Bonded layer；
S22, separating layer is coated at described remaining position of silicon substrate mask plate, and use location technology, complete the silicon substrate
The contraposition of mask plate and the wafer；
S23, it heats, positions to aligning the silicon substrate mask plate after being bonded and the wafer in the step S22
Interim bonded layer at reference point location connects the silicon substrate mask plate and the wafer under the influence of temperature so that the silicon
It is bonded temporarily between base mask plate and the wafer.
Further, in the first embodiment of the present invention, the step S4 is specially：It is interrupted using laser separation technique
Combination interface at silicon substrate mask plate and wafer positioning datum point position completes point of the silicon substrate mask plate and the wafer
From.Wafer continuation after separation is combined with other silicon substrate mask plates with different pixels figure layer, carries out remaining OLED functional layer
The vapor deposition of film；And the silicon substrate mask plate after detaching can be then bonded with new wafer, repeatedly complete corresponding OLED functions tunic
Vapor deposition.
It please refers to shown in Fig. 4, is the flow chart of step S2 ' in second embodiment of the invention.The step S2 ' is specific
For：
S21 ', cleaning and hydrophilic activation process are carried out to the surface that the wafer and the silicon substrate mask plate are bonded to each other,
And choose positioning datum point in the corresponding position of the silicon substrate mask plate and wafer；
S22 ', using location technology, complete the contraposition of the silicon substrate mask plate and the wafer so that the silicon substrate mask
Version and the wafer realize fitting under the action of covalent bond.
Specifically, in the present embodiment, the silicon substrate mask plate and the wafer are made of identical material, with
The silicon substrate mask plate and the Wafer alignment generate covalent bond during being bonded, and ensure the silicon substrate mask plate and the crystalline substance
The stability of circle connection.
In the second embodiment of the present invention, the step S4 ' is specially：To the silicon substrate mask plate to fit together
And the wafer is heated, the breaking of covalent bonds between the silicon substrate mask plate and the wafer simultaneously forms hydrogen, with separation
The silicon substrate mask plate and the wafer.
It should be noted that the positioning datum point should be chosen at the wafer functional layer is not yet deposited in the present invention
At the position of film.Specifically, in the present invention, since the realization of the true color of the high PPI silicon substrates OLED is to pass through feux rouges
What OLED functions tunic, green light OLED functions tunic and Nan dian Yao function tunic high-precision vapor deposition were realized, therefore the present invention
High PPI silicon substrates OLED need to be repeatedly deposited, and the pixel graphics of the silicon substrate mask plate needed for vapor deposition can be according to OLED work(every time
It can tunic (feux rouges OLED functions tunic, green light OLED functions tunic, Nan dian Yao function tunic and other function tunics) vapor deposition
Position changes, and therefore, different OLED functions tunics needs to be replaced silicon substrate mask plate during vapor deposition, further
, during ensureing that the quality of OLED function tunics vapor deposition, different silicon substrate mask plates are the Wafer alignment fitting, answer
Ensure that positioning datum point is not located on any one layer of OLED function tunics.
It please refers to shown in Fig. 5, for a kind of structural schematic diagram of silicon substrate OLED display modules 100 of the present invention.The silicon substrate
OLED display modules 100 include the outer package layer 1 from top to bottom arranged successively and silicon substrate oled layer 2, wherein the silicon substrate OLED
Layer 2 is made of the preparation method of the silicon substrate OLED.Further, in the present invention, the silicon substrate oled layer 2 includes by upper
Thin-film encapsulation layer 21, OLED functional layers 22 and the wafer 23 arranged successively under.Wherein, the OLED functional layers 22 include more
The OLED function tunics to be formed are deposited through different silicon substrate mask plates for layer.
In conclusion the preparation method of the silicon substrate OLED of the present invention is by controlling mask plate in silicon substrate OLED preparation process
The selection of preparation process and mask plate improve the preparation precision of pixel graphics on silicon substrate mask plate, further improve OLED
The vapor deposition accuracy of function tunic so that the silicon substrate OLED prepared using the preparation method of the silicon substrate OLED of the present invention is not necessarily to optical filter
The full-color display of silicon substrate OLED can be completed.Further, the silicon substrate prepared using the preparation method of the silicon substrate OLED of the present invention
Silicon substrate OLED display modules 100 made of OLED, the use and white light OLED for eliminating CF layers are prepared separately, effectively prevent
Influence of CF layers of the setting to the light transmittance of silicon substrate OLED so that the brightness of silicon substrate OLED display modules 100 of the invention is to pass
4 times of silicon substrate OLED display modules of uniting (combining the silicon substrate OLED prepared by CF layers and white light OLED i.e. in traditional technology), meanwhile,
The PPI for improving silicon substrate OLED display modules simplifies the preparation process of silicon substrate OLED, is suitable for promoting and use.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although with reference to preferred embodiment to this hair
It is bright to be described in detail, it will be understood by those of ordinary skill in the art that, it can modify to technical scheme of the present invention
Or equivalent replacement, without departing from the spirit of the technical scheme of the invention and range.
Claims (10)
1. a kind of preparation method of silicon substrate OLED, which is characterized in that include the following steps：
S1, several silicon substrate mask plates with vapor deposition pixel graphics are prepared；
S2, the OLED function tunics according to required vapor deposition choose the silicon substrate mask plate with respective pixel figure；
S3, using label location technology, the silicon substrate mask plate is bonded with the contraposition of wafer, and corresponding OLED functions are deposited
Tunic；
After S4, OLED function tunic are deposited, the silicon substrate mask plate and the wafer are detached using isolation technics；
Remaining the function tunic for preparing OLED is vaporized on the wafer by S5, repetition step S2~S4 respectively, and silicon substrate is made
OLED matrixes；
S6, the silicon substrate OLED matrixes in the step S5 are packaged, the preparation of silicon substrate OLED terminates.
2. the preparation method of silicon substrate OLED according to claim 1, it is characterised in that：The silicon substrate mask plate at least provided with
3 kinds, respectively feux rouges mask plate, green light mask plate and blue light mask plate；Each mask plate is covered at least provided with described in 1 piece and every piece
The pixel graphics of film version can be prepared according to actual conditions.
3. the preparation method of silicon substrate OLED according to claim 2, which is characterized in that the step S1 is specially：
S11, silicon substrate is chosen, and photoresist is coated on the surface of the silicon substrate, using photoetching process on the photoresist
Exposure prepares pixel graphics；
S12, using suitching type etching technics according to the pixel graphics, the silicon substrate is performed etching, and silicon substrate carve
After erosion, the photoresist of silicon substrate is removed；
S13, using thinning technique, the silicon substrate in step S12 is thinned so that pixel graphics penetrate the silicon substrate,
Silicon substrate mask plate is made.
4. the preparation method of silicon substrate OLED according to claim 3, it is characterised in that：It is described to be thinned in the step S13
Technology is specially that the silicon substrate for being etched with pixel graphics is thinned using chemical Mechanical Polishing Technique.
5. the preparation method of silicon substrate OLED according to claim 2, which is characterized in that the step S2 is specially：
S21, the surface being bonded to each other to the wafer and the silicon substrate mask plate are cleaned, in the wafer and the silicon substrate
Positioning datum point is chosen on the corresponding position of mask plate, and interim bonded layer is coated at the position of the positioning datum point；
S22, separating layer is coated at described remaining position of silicon substrate mask plate, and use location technology, complete the silicon substrate mask
The contraposition of version and the wafer；
S23, it is heated to aligning the silicon substrate mask plate after being bonded and the wafer in the step S22 so that described
It is bonded temporarily between silicon substrate mask plate and the wafer.
6. the preparation method of silicon substrate OLED according to claim 5, which is characterized in that the step 4 is specially：Using sharp
Light isolation technics interrupts the combination interface at silicon substrate mask plate and wafer positioning datum point position, completes silicon substrate mask plate and wafer
Separation.
7. the preparation method of silicon substrate OLED according to claim 2, which is characterized in that the step S2 is specially：
S21, cleaning and hydrophilic activation process are carried out to the surface that the wafer and the silicon substrate mask plate are bonded to each other, and in institute
Choose positioning datum point in the corresponding position for stating silicon substrate mask plate and wafer；
S22, using location technology, complete the contraposition of the silicon substrate mask plate and the wafer so that the silicon substrate mask plate and
The wafer realizes fitting under the action of covalent bond.
8. the preparation method of silicon substrate OLED according to claim 7, which is characterized in that the step S4 is specially：To patch
The silicon substrate mask plate being combined and the wafer are heated, covalent between the silicon substrate mask plate and the wafer
Key is broken and is formed hydrogen, to detach the silicon substrate mask plate and the wafer.
9. the preparation method of the silicon substrate OLED according to claim 5 or 7, it is characterised in that：The positioning datum point is chosen
It is not yet deposited at the position of function tunic in the wafer.
10. a kind of silicon substrate OLED display modules, including the outer package layer and silicon substrate oled layer from top to bottom arranged successively, feature
It is：The silicon substrate oled layer uses the preparation method of the silicon substrate OLED in any one of claim 1~9 to be made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810123726.2A CN108321311A (en) | 2018-02-07 | 2018-02-07 | The preparation method and silicon substrate OLED display modules of silicon substrate OLED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810123726.2A CN108321311A (en) | 2018-02-07 | 2018-02-07 | The preparation method and silicon substrate OLED display modules of silicon substrate OLED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108321311A true CN108321311A (en) | 2018-07-24 |
Family
ID=62903133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810123726.2A Pending CN108321311A (en) | 2018-02-07 | 2018-02-07 | The preparation method and silicon substrate OLED display modules of silicon substrate OLED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108321311A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429122A (en) * | 2019-08-07 | 2019-11-08 | 昆山梦显电子科技有限公司 | Silicon substrate micro display screen and preparation method thereof |
| CN110518134A (en) * | 2019-08-26 | 2019-11-29 | 昆山维信诺科技有限公司 | Display and preparation method thereof |
| CN110993562A (en) * | 2019-11-07 | 2020-04-10 | 复旦大学 | Preparation method of thin film device based on all-silicon-based mask |
| CN111192533A (en) * | 2020-02-28 | 2020-05-22 | 恩利克（浙江）智能装备有限公司 | Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel |
| CN112331810A (en) * | 2020-11-26 | 2021-02-05 | 深圳市芯视佳半导体科技有限公司 | Preparation method of high-brightness color silicon-based OLED (organic light emitting diode) micro-display and micro-display device |
| CN112420802A (en) * | 2020-12-02 | 2021-02-26 | 深圳市芯视佳半导体科技有限公司 | Preparation method of silicon-based OLED micro-display convenient for heat dissipation |
| CN112725729A (en) * | 2020-12-29 | 2021-04-30 | 天津市滨海新区微电子研究院 | Method for manufacturing color silicon-based OLED micro-display and mask plate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840999A (en) * | 2010-03-25 | 2010-09-22 | 北京大学 | Silicon substrate organic electroluminescent luminescent device and preparation method thereof |
| CN102023436A (en) * | 2009-09-16 | 2011-04-20 | 联华电子股份有限公司 | Liquid crystal on silicon (LCoS) panel and manufacturing method thereof |
| CN105161636A (en) * | 2015-07-31 | 2015-12-16 | 深圳市星火辉煌系统工程有限公司 | Silicon-based OLED display pixel preparation method |
| CN105261588A (en) * | 2014-07-17 | 2016-01-20 | 南通威倍量子科技有限公司 | Preparation method for ultrahigh-precision silicon-substrate through-hole graphic structure |
| CN107346803A (en) * | 2016-05-05 | 2017-11-14 | 上海珏芯光电科技有限公司 | The manufacture method of silicon substrate backboard light-emitting diode display |
-
2018
- 2018-02-07 CN CN201810123726.2A patent/CN108321311A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023436A (en) * | 2009-09-16 | 2011-04-20 | 联华电子股份有限公司 | Liquid crystal on silicon (LCoS) panel and manufacturing method thereof |
| CN101840999A (en) * | 2010-03-25 | 2010-09-22 | 北京大学 | Silicon substrate organic electroluminescent luminescent device and preparation method thereof |
| CN105261588A (en) * | 2014-07-17 | 2016-01-20 | 南通威倍量子科技有限公司 | Preparation method for ultrahigh-precision silicon-substrate through-hole graphic structure |
| CN105161636A (en) * | 2015-07-31 | 2015-12-16 | 深圳市星火辉煌系统工程有限公司 | Silicon-based OLED display pixel preparation method |
| CN107346803A (en) * | 2016-05-05 | 2017-11-14 | 上海珏芯光电科技有限公司 | The manufacture method of silicon substrate backboard light-emitting diode display |
Non-Patent Citations (1)
| Title |
|---|
| 陈全胜: "《晶圆级3D IC工艺技术》", 31 October 2016 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429122A (en) * | 2019-08-07 | 2019-11-08 | 昆山梦显电子科技有限公司 | Silicon substrate micro display screen and preparation method thereof |
| CN110429122B (en) * | 2019-08-07 | 2024-05-24 | 昆山梦显电子科技有限公司 | Silicon-based micro display screen and preparation method thereof |
| CN110518134A (en) * | 2019-08-26 | 2019-11-29 | 昆山维信诺科技有限公司 | Display and preparation method thereof |
| CN110518134B (en) * | 2019-08-26 | 2022-10-21 | 苏州清越光电科技股份有限公司 | Display and preparation method thereof |
| CN110993562A (en) * | 2019-11-07 | 2020-04-10 | 复旦大学 | Preparation method of thin film device based on all-silicon-based mask |
| CN110993562B (en) * | 2019-11-07 | 2023-09-29 | 复旦大学 | Preparation method of thin film device based on full silicon-based mask |
| CN111192533A (en) * | 2020-02-28 | 2020-05-22 | 恩利克（浙江）智能装备有限公司 | Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel |
| CN112331810A (en) * | 2020-11-26 | 2021-02-05 | 深圳市芯视佳半导体科技有限公司 | Preparation method of high-brightness color silicon-based OLED (organic light emitting diode) micro-display and micro-display device |
| CN112420802A (en) * | 2020-12-02 | 2021-02-26 | 深圳市芯视佳半导体科技有限公司 | Preparation method of silicon-based OLED micro-display convenient for heat dissipation |
| CN112725729A (en) * | 2020-12-29 | 2021-04-30 | 天津市滨海新区微电子研究院 | Method for manufacturing color silicon-based OLED micro-display and mask plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108321311A (en) | The preparation method and silicon substrate OLED display modules of silicon substrate OLED | |
| Bower et al. | Active-matrix OLED display backplanes using transfer-printed microscale integrated circuits | |
| CN106653768B (en) | TFT backboard and manufacturing method thereof | |
| WO2019100433A1 (en) | Method for preparing led display, and led display | |
| KR100858919B1 (en) | Display unit and method of manufacturing the display unit | |
| US7061556B2 (en) | Display device using bidirectional two-terminal element and manufacturing method of display device | |
| US6087772A (en) | Organic electroluminecent display device suitable for a flat display and method of forming the same | |
| CN106783883B (en) | Display substrate and preparation method thereof | |
| US20030025446A1 (en) | Manufacturing method and structure of OLED display panel | |
| TWI244354B (en) | Deposition mask, manufacturing method thereof, display unit, manufacturing method thereof, and electronic apparatus including display unit | |
| CN109791939A (en) | The method of micro- LED display panel, micro- light emitting display device and the micro- LED display panel of manufacture | |
| KR20130010146A (en) | Manufacturing method of flexible display device | |
| CN101088141A (en) | In-line process for making thin film electronic devices | |
| WO2021120324A1 (en) | Display panel and preparation method thereof | |
| JP6800327B2 (en) | OLED substrate and its manufacturing method | |
| CN107516664A (en) | A kind of preparation method of array base palte, array base palte and display device | |
| CN102629671B (en) | Preparation method of organic electroluminescent device of silicon base micro display | |
| CN110112188A (en) | The preparation method of display panel and display panel | |
| CN109003989A (en) | Array substrate and preparation method thereof, display panel and display device | |
| CN107346803A (en) | The manufacture method of silicon substrate backboard light-emitting diode display | |
| JP2014011084A (en) | Method for manufacturing organic el device | |
| KR20090003620A (en) | Organic light emitting display device and method for manufacturing of the same | |
| CN110492013B (en) | Manufacturing method of quantum dot display screen | |
| CN112510068A (en) | Silicon-based organic electroluminescent micro-display and preparation method thereof | |
| CN105390506B (en) | Display device, array substrate and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190527 Address after: 215300 Room No. 188 Chenfeng Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: Kunshan Mengxian Electronic Technology Co., Ltd. Address before: Room D1-7179, 58 Fumin Branch, Hengsha Township, Chongming District, Shanghai, 202150 (Shanghai Hengtai Economic Development Zone) Applicant before: Shanghai Han Li Electronic Technology Co. Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180724 |