CN111192533A - Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel - Google Patents
Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel Download PDFInfo
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- CN111192533A CN111192533A CN202010127994.9A CN202010127994A CN111192533A CN 111192533 A CN111192533 A CN 111192533A CN 202010127994 A CN202010127994 A CN 202010127994A CN 111192533 A CN111192533 A CN 111192533A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 49
- 238000007789 sealing Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052681 coesite Inorganic materials 0.000 claims description 24
- 229910052906 cristobalite Inorganic materials 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 24
- 229910052682 stishovite Inorganic materials 0.000 claims description 24
- 229910052905 tridymite Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 8
- 230000000007 visual effect Effects 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 150000003376 silicon Chemical class 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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Abstract
The invention discloses a structure of a silicon-based OLED (organic light emitting diode) micro display panel, which comprises a silicon substrate, wherein a TFT (thin film transistor) is arranged above the silicon substrate, an anode is arranged on the TFT, a white OLED is arranged on the anode, a color filter is arranged above the white OLED, a glass substrate is arranged above the color filter, the white OLED is plated on the anode, the anode is plated on the TFT, the TFT is plated on the silicon substrate, the color filter is manufactured on the glass substrate, the glass substrate and the silicon substrate are fused, sealed and fixedly attached through laser, the color filter is manufactured on an ultrathin glass substrate, the white OLED is plated on a Si substrate, then, the bonding and the laser melting sealing are carried out, compared with the prior art, the TFP layer (multilayer film packaging) is omitted, so that the color filter is closer to a white light OLED, the projection visual angle of the white light OLED is increased, the visual angle of the silicon-based OLED micro display panel is improved, the production process difficulty is reduced, and the ultra-high pixel density (>3000PPI) can be manufactured.
Description
Technical Field
The invention belongs to the field of OLED display panels, and particularly relates to a structure and a manufacturing method of a silicon-based OLED micro display panel.
Background
Modern electronic technology has developed rapidly, especially display screen technology, from mature LCD to OLED which is now more and more widely used, and flexible and bendable OLED display panels and silicon-based OLED micro display panels have been developed. The silicon-based OLED micro display panel integrates a high-density and complex driving circuit on a chip taking monocrystalline silicon as an active driving back plate by utilizing a mature semiconductor CMOS technology, and then is matched with an OLED, so that a solution of a single-chip micro display is provided. The near-eye display glasses have the characteristics of small volume, light weight, high brightness, high contrast, high PPI (pulse-to-pulse ratio), high integration degree, low response time, large visual angle, wide use temperature range, low power consumption and the like, and are particularly suitable for near-eye display glasses and helmets of virtual/enhanced/mixed reality scenes such as AR/VR/MR and the like.
Structurally, the most obvious difference between silicon-based OLEDs and conventional OLEDs is that the silicon-based OLED panel has the bottom glass plate removed and replaced with a silicon chip. The display mainly comprises an IC manufacturing technology and an OLED technology, is different from the traditional mobile phone, computer and television screens, and generally has the diagonal angle less than 2 inches and the pixel density more than 1500 PPI.
Since the monocrystalline silicon wafer is opaque, the structure of the silicon-based OLED must be designed as a top-emitting OLED (top-emitting OLED) so that light is emitted through the translucent top electrode.
The pixel density of the micro display panel is very high and can reach more than 2000 PPI. The metal mask plate has insufficient precision, and the full-color panel is manufactured by a white light OLED plus color filter (color filter) mode instead of the RGB parallel mode.
When the pixel density is increased to 2000-3000 PPI, there is no screen effect when the pixel is projected to eyes. But the pixel size is only a few μm, which is an order of magnitude smaller than the optical glue thickness.
As shown in fig. 1, a first structure is shown, in the conventional method, a color filter 5(CF) is attached to a silicon-based white OLED2 by an optical adhesive 4, which sequentially comprises a glass substrate 6, the color filter 5, the optical adhesive 4, a multi-layer thin film package 3, a white OLED2 and a silicon substrate 1 from top to bottom, but the optical adhesive is too thick, so that the viewing angle a is very small and the pixel density cannot be increased. As shown in fig. 2, in the second structure, SONY directly manufactures CF on OLED (CF on OLED) in order to improve the viewing angle and pixel resolution, although the viewing angle a is increased, the difficulty of manufacturing CF on white OLED (W-OLED) is high: the temperature can not exceed 100 ℃, and the wet process can not be used.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for manufacturing a color filter on an ultrathin glass substrate, plating a white light OLED on a Si substrate, then laminating and carrying out laser melt-sealing, and compared with the prior art, the method omits a TFP layer (multilayer film packaging), so that the color filter is closer to the white light OLED, the projection visual angle of the white light OLED is increased, the visual angle of a silicon-based OLED micro display panel is improved, the production process difficulty is reduced, and the micro display panel with ultrahigh pixel density (more than 3000PPI) can be manufactured.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a structure of miniature display panel of silicon-based OLED, includes the silicon substrate, silicon substrate top sets up TFT, is provided with the positive pole on the TFT, is provided with white light OLED on the positive pole, white light OLED top is provided with color filter, and the color filter top is provided with the glass substrate.
Further, the white light OLED is plated on the anode, the anode is plated on the TFT, the TFT is plated on the silicon substrate, the color filter is manufactured on the glass substrate, and the glass substrate and the silicon substrate are fixedly attached through laser sealing.
Further, the glass substrate is ultra-thin glass.
And an explosion-proof film is arranged above the ultrathin glass.
Further, the thickness of the ultrathin glass is 30-150 micrometers.
The thickness of the color filter is further 2-4 microns.
A method for manufacturing a silicon-based OLED micro display panel comprises the following steps,
s1: firstly, coating BM on a glass substrate and drying, and then manufacturing RGB three-color patterns on the BM by a pigment dispersion method to form a color layer;
s2: after the color layer is completely dried, plating SiO2 on the surface of the color layer; then, screen printing or spot coating glass slurry on the outer ring of the color layer and drying to form a color filter, and coating UV glue on the edge of the color filter;
s3: manufacturing a TFT on a silicon substrate, manufacturing an anode on the TFT, manufacturing a SiO2 insulating layer, plating SiO2 on the SiO2 insulating layer in an anode spacing area and the periphery of the anode by adopting a CVD/PVD method, and dry-etching or etching to form a SiO2 insulating layer; then plating the white OLED on the anode, and keeping a SiO2 insulating layer on the outer ring of the white OLED;
s4: aligning and attaching the glass substrate in the step S2 and the silicon substrate in the step S3, enabling the color filter to face the white OLED, and curing the UV glue through UV; and then fusing the glass slurry on the outer ring of the color layer with the SiO2 on the outer ring of the white OLED by adopting laser fusion to finish the manufacture.
Further after step S1, the color layer and BM are planarized by top-grinding.
Further, in step S2, SiO2 is deposited on the surface of the color layer by CVD.
Compared with the prior art, the invention has the beneficial effects that:
1. the visual angle is improved, the multilayer film package still has the thickness more than 10 mu m, the white light OLED can be closer to CF by adopting glass paste (Frit) package, the visual angle is improved, and the micro display panel with ultrahigh pixel density (more than 3000PPI) can be manufactured;
2. the adoption of the ultrathin glass and the ultrathin silicon wafer ensures that the miniature display panel can have certain curvature, and the image distortion is reduced when the miniature display panel is applied to near eyes;
3. the explosion-proof film is coated on the ultrathin glass, so that the damage caused by glass breakage is prevented when an accident happens;
4. multilayer film packaging is not adopted, so that the high investment of coating equipment for a waterproof layer (overlapping an organic layer and an inorganic layer) can be saved;
5. the process difficulty of making CF on white OLED is high: the temperature can not exceed 100 ℃, and the wet process can not be used. By adopting the process of directly making CF on the glass and then laminating, the yield can be greatly improved.
Drawings
FIG. 1 is a schematic diagram of a first prior art configuration;
FIG. 2 is a schematic diagram of a second prior art configuration;
FIG. 3 is a schematic diagram of the structure of a silicon-based OLED micro-display panel according to the present invention;
FIG. 4 is a flow chart of a method for fabricating a silicon-based OLED micro-display panel according to the present invention;
FIG. 5 is a schematic view of a glass substrate and a silicon substrate not bonded together;
fig. 6 is a schematic view of a glass substrate and a silicon substrate bonded together.
Reference numerals: 1. a silicon substrate; 2. a white light OLED; 3. packaging with a plurality of layers of films; 4. optical cement; 5. a color filter; 6. a glass substrate; 7. an explosion-proof membrane; 8. and an anode.
Detailed Description
Embodiments of the present invention are further described with reference to fig. 3 to 6.
In the description of the present invention, it should be noted that, for the terms of orientation, such as "central", "lateral (X)", "longitudinal (Y)", "vertical (Z)", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate that the orientation and positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and should not be construed as limiting the specific scope of the present invention.
Furthermore, if the terms "first" and "second" are used for descriptive purposes only, they are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. Thus, a definition of "a first" or "a second" feature may explicitly or implicitly include one or more of the features, and in the description of the invention, "a number" or "a number" means two or more unless explicitly specified otherwise.
The utility model provides a structure of miniature display panel of silicon-based OLED, includes silicon substrate 1, silicon substrate 1 top sets up TFT, is provided with positive pole 8 on the TFT, is provided with white light OLED2 on the positive pole 8, white light OLED2 top is provided with color filter 5, and color filter 5 top is provided with glass substrate 6.
In this embodiment, the white OLED2 is plated on the anode 8, the anode 8 is plated on the TFT, the TFT is plated on the silicon substrate 1, the color filter 5 is fabricated on the glass substrate 6, and the glass substrate 6 and the silicon substrate 1 are fixed and bonded by laser sealing.
Wherein the glass substrate 6 is ultra-thin glass with a thickness of 30-150 μm, and is preferably provided with an explosion-proof film 7 on the upper surface thereof.
In the embodiment, the silicon substrate 1 is made of an ultrathin silicon wafer, and the thickness of the silicon substrate is about 200 microns; the white OLED2 was about 1 micron thick; the thickness of the color filter 5 is 2-4 microns; the micro display panel can have a certain curvature, and image distortion is reduced when the micro display panel is applied to near eyes.
A method for manufacturing a silicon-based OLED micro display panel comprises the following steps,
s1: firstly, coating BM on a glass substrate 6 and drying, and then manufacturing RGB three-color patterns on the BM by using a pigment dispersion method to form a color layer;
s2: after the color layer is completely dried, plating SiO2 on the surface of the color layer; then, screen printing or spot coating glass slurry on the outer ring of the color layer and drying to form a color filter 5, and coating UV glue on the edge of the color filter 5;
s3: manufacturing a TFT on a silicon substrate 1, then manufacturing an anode 8 on the TFT, then manufacturing a SiO2 insulating layer, plating SiO2 on the SiO2 insulating layer in the interval area of the anode 8 and the periphery of the anode 8 by adopting a CVD/PVD method, and then dry-etching or etching to form a SiO2 insulating layer; then plating the white OLED2 on the anode 8, and keeping the SiO2 insulating layer on the outer ring of the white OLED 2;
s4: aligning and attaching the glass substrate 6 in the step S2 with the silicon substrate 1 in the step S3, so that the color filter 5 faces the white OLED2, and curing the UV glue through UV; and then fusing the glass slurry on the outer ring of the color layer with the SiO2 on the outer ring of the white OLED2 by adopting laser fusion to finish the manufacture.
In the embodiment, preferably, Cr is used as the BM material, and preferably, after step S1, the color layer and the BM top surface are planarized by polishing.
In step S2, SiO2 is deposited on the surface of the color layer by CVD.
In step S2, if a plurality of color filters 5 are simultaneously manufactured on one ultra-thin glass substrate 6 during the actual production process, the UV glue dots are coated in the spaced areas of the color filters 5; after step S4, a dicing step is preferably performed, and then a normal module process is performed.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (9)
1. The utility model provides a structure of miniature display panel of silicon-based OLED, includes the silicon substrate which characterized in that: the LED light source comprises a silicon substrate, and is characterized in that a TFT is arranged above the silicon substrate, an anode is arranged on the TFT, a white OLED is arranged on the anode, a color filter is arranged above the white OLED, and a glass substrate is arranged above the color filter.
2. The structure of the silicon-based OLED micro display panel according to claim 1, wherein: the white light OLED is plated on an anode, the anode is plated on a TFT, the TFT is plated on a silicon substrate, the color filter is manufactured on a glass substrate, and the glass substrate and the silicon substrate are fixedly attached through laser fusion sealing.
3. The structure of the silicon-based OLED micro display panel according to claim 2, wherein: the glass substrate is ultra-thin glass.
4. The structure of the silicon-based OLED micro-display panel of claim 3, wherein: an explosion-proof film is arranged above the ultrathin glass.
5. The structure of the silicon-based OLED micro-display panel according to claim 4, wherein: the thickness of the ultrathin glass is 30-150 microns.
6. The structure of the silicon-based OLED micro-display panel of claim 5, wherein: the thickness of the color filter is 2-4 microns.
7. A manufacturing method of a silicon-based OLED micro display panel is characterized by comprising the following steps,
s1: firstly, coating BM on a glass substrate and drying, and then manufacturing RGB three-color patterns on the BM by a pigment dispersion method to form a color layer;
s2: after the color layer is completely dried, plating SiO2 on the surface of the color layer; then, screen printing or spot coating glass slurry on the outer ring of the color layer and drying to form a color filter, and coating UV glue on the edge of the color filter;
s3: manufacturing a TFT on a silicon substrate, manufacturing an anode on the TFT, manufacturing a SiO2 insulating layer, plating SiO2 on the SiO2 insulating layer in an anode spacing area and the periphery of the anode by adopting a CVD/PVD method, and dry-etching or etching to form a SiO2 insulating layer; then plating the white OLED on the anode, and keeping a SiO2 insulating layer on the outer ring of the white OLED;
s4: aligning and attaching the glass substrate in the step S2 and the silicon substrate in the step S3, enabling the color filter to face the white OLED, and curing the UV glue through UV; and then fusing the glass slurry on the outer ring of the color layer with the SiO2 on the outer ring of the white OLED by adopting laser fusion to finish the manufacture.
8. The method of claim 7, wherein the method further comprises: after step S1, the color layer and BM top surface are planarized by grinding them flat.
9. The method of claim 8, wherein the method further comprises: in step S2, SiO2 is deposited on the surface of the color layer by CVD.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127994.9A CN111192533A (en) | 2020-02-28 | 2020-02-28 | Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel |
| PCT/CN2020/101034 WO2021169142A1 (en) | 2020-02-28 | 2020-07-09 | Structure of and producing method for silicon-based oled miniature display panel |
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| CN202010127994.9A CN111192533A (en) | 2020-02-28 | 2020-02-28 | Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel |
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| CN114156420A (en) * | 2021-12-02 | 2022-03-08 | 惠州Tcl移动通信有限公司 | Display module and electronic equipment |
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| WO2021169142A1 (en) | 2021-09-02 |
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