CN104051494A - Miniature active matrix type organic light emitting display and manufacturing method thereof - Google Patents
Miniature active matrix type organic light emitting display and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a miniature active matrix type organic light emitting display and a manufacturing method of the miniature active matrix type organic light emitting display. The miniature active matrix type organic light emitting display is characterized by comprising a silicon substrate with a display driving circuit, and an OLED miniature full-color display device formed on the silicon substrate. The manufacturing method includes the steps of anode pixel electrode manufacture, OLED organic thin film evaporation, thin film sealing, manufacture of a color filter layer and a black matrix on cover plate glass, and attachment of the silicon substrate and the cover plate glass. By means of the miniature active matrix type organic light emitting display and the manufacturing method, the wet processing can be prevented from being generated in the preparation process of OLED devices, and performance of OLEDs can be ensured.
Description
Technical field
The present invention relates to a kind of Display Technique, especially a kind of organic light-emitting diode display technology, specifically a kind of miniature active matrix type organic luminous display device and preparation method thereof.
Background technology
Organic Light Emitting Diode (OLED) display is a kind of by show the self-emission display apparatus of image with luminous Organic Light Emitting Diode.Produce light by controlling the energy producing when exciton falls after rise from excitation state.By electronics and hole, combination in organic emission layer produces exciton.Conventionally organic light emitting diode display comprises transistor driving matrix and organic light-emitting diode display unit.
Use monocrystalline silicon to make transistor driving matrix as substrate, because monocrystalline silicon has very high mobility, so can realize very high resolution.Use monocrystalline silicon to be conventionally less than 1 inch as the display size of the organic light emitting diode display of substrate making, belong to miniature active matrix organic light emitting diode display.In order to realize the colorize of miniature active matrix organic light emitting diode display, conventionally use the technique such as color filter film of LCD in showing.
Organic light emitting diode display is easy to be subject to water oxygen etc. to affect, and can destroy the useful life of Organic Light Emitting Diode.Therefore in OLED display production, need to avoid entering of water oxygen, need OLED display to carry out the protection of exclusion of water oxygen simultaneously.
Summary of the invention
The object of the invention is the problem that needs in process of production anti-sealing oxygen impact to cause manufacture difficulty to increase for existing Organic Light Emitting Diode, design a kind of water oxygen of can avoiding completely and enter the miniature active matrix type organic luminous display device (being miniature AMOLED display) in device, its manufacture method is provided simultaneously.
One of technical scheme of the present invention is:
A kind of miniature active matrix type organic luminous display device, it comprises silicon chip substrate 1 and glass substrate 15, it is characterized in that being manufactured with multiple anode pixels electrodes 2 in described silicon chip substrate 1, between each anode pixels electrode 2, pass through insulating barrier 3 mutually insulateds, on anode pixels electrode 2, be manufactured with device layer, device layer is provided with encapsulation thin film encapsulation layers, in glass substrate 16 one side relative with thin film encapsulation layers, be manufactured with multiple colourama resistance layers 14, between each colourama resistance layer 14, be separated into separate unit by black matrix layer 15, the glass substrate 16 that is positioned at the superiors is connected with silicon chip substrate laminating by the adhesive glue of surrounding.
The material of described anode pixels electrode 2 is monolayer material or multilayer materials, described monolayer material is Al, Mo or W, composite material is Mo/Al/Mo, Al/Mo, Cr/Al/Mo or Cr/Ti/Al/Mo, and the gross thickness of anode pixels electrode 2 is between 60nm～550nm.
Described anode pixels electrode 16, through graphical technique, forms independently pixel electrode, elemental area be (3 μ m～5 μ m) × 9 μ m～15 μ m) between, described graphical technique is used dry etch process formation.
Gap between described pixel electrode after graphical, between 0.3 μ m～1.5 μ m, in order to prevent that gap from causing device short circuit, is filled with polymer insulation layer 3 between gap.
Described device layer is made up of hole injection layer 4, hole transmission layer 5, luminescent layer 6, exciton barrier layer 7, electron transfer layer 8, electron injecting layer 9 and negative electrode layer 10 successively.
Described thin film encapsulation layers forms by three layers, and ground floor is the high refractive index layer that thermal evaporation forms, by organic compound layer Alq3 and inorganic compound layer MoO
3composition, thickness is at 30nm～100nm; The thin layer of the described second layer for using plasma technique for atomic layer deposition (PEALD) method to prepare, this thin layer is Al
2o
3or TiO
3, thickness is at 20～200nm; Described the 3rd layer is organic polymer sealant, and this sealant uses spin coating or scrapes figure or inkjet printing methods formation, and film thickness is at 300～800nm.
The present invention uses the method for photoetching on glass substrate 16, to make chromatic filter layer and black matrix, the area of single chromatic filter layer be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, consistent with pixel size, about 0.5um～1.5 of thickness μ m; The area of black matrix be (0.3 μ m～1.5 μ m) × (9 μ m～15 μ are m), consistent with pixel separation, thickness 0.5um～1.5um.
In described silicon chip substrate 1 and glass substrate laminating process, first on silicon substrate, coat bonded adhesives, use precise glue dispensing machine to control, the width 0.5mm～1.5mm of glue, the thickness 0.2um～1.8um of glue; Use accurate abutted equipment that silicon substrate and color film glass substrate are carried out to precision laminating, realize pixel electrode corresponding one by one with chromatic filter layer.
Two of technical scheme of the present invention is:
A kind of miniature active matrix type organic luminous display device manufacture method, is characterized in that it comprises the following steps:
First, adopt graphical technique in silicon chip substrate 1, to make anode pixels electrode 2; Between anode pixels electrode 2, increase insulating barrier 3 to prevent anode pixels electric pole short circuit simultaneously;
Secondly, on anode pixels electrode 2, make the device layer being formed by hole injection layer 4, hole transmission layer 5, luminescent layer 6, exciton barrier layer 7, electron transfer layer 8, electron injecting layer 9 and negative electrode layer 10 successively;
The 3rd, on device layer, install thin film encapsulation layers additional to avoid water oxygen to enter device layer;
The 4th, in glass substrate 16 one side relative with thin film encapsulation layers, make colourama resistance layer 14, then colourama resistance layer 14 is separated into multiple separate units by black matrix layer 15;
Finally, glass substrate 16 is bondd and is connected with silicon chip substrate 1.
Described thin film encapsulation layers forms by three layers, and ground floor is the high refractive index layer that thermal evaporation forms, by organic compound layer Alq
3with inorganic compound layer MoO
3composition, thickness is at 30nm～100nm; The thin layer of the described second layer for using plasma technique for atomic layer deposition (PEALD) method to prepare, this thin layer is Al
2o
3or TiO
3, thickness is at 20～200nm; Described the 3rd layer is organic polymer sealant, and this sealant uses spin coating or scrapes figure or inkjet printing methods formation, and film thickness is at 300～800nm.
The invention has the beneficial effects as follows:
The present invention can not only ensure to avoid in process of production water oxygen to enter in device completely, also can ensure after completing isolated to water oxygen simultaneously, thereby realizes the high reliability of display.
Brief description of the drawings
Fig. 1 is anode pixels electrode fabrication process schematic diagram of the present invention
Fig. 2 is PEALD of the present invention and common ALD water oxygen obstructing capacity comparative result schematic diagram.
Silicon substrate structure and the color filter film glass structure schematic diagram of one invention of Fig. 3 fruit
Fig. 4 is miniature active matrix type organic luminous display device structural diagrams intention of the present invention.
In figure: the 1st, silicon chip substrate, the 2nd, pixel electrode, the 3rd, polyimide, the 4th, hole injection layer, the 5th, hole transmission layer, the 6th, luminescent layer, the 7th, exciton barrier layer, the 8th, electron transfer layer, the 9th, electron injecting layer, the 10th, negative electrode layer, the 11st, sealant I, the 12nd, sealant II, the 13rd, sealant III, the 14th, colourama resistance layer, the 15th, black matrix layer, 16 is glass substrate.
Embodiment
The present invention is further illustrated for structure drawings and Examples below.
Embodiment mono-.
As shown in Figure 4.
A kind of miniature active matrix type organic luminous display device, it is mainly polyimide by silicon chip substrate 1, pixel electrode 2, insulating barrier 3(material), hole injection layer 4, hole transmission layer 5, luminescent layer 6, exciton barrier layer 7, electron transfer layer 8, electron injecting layer 9, negative electrode motor layer 10, sealant I11, sealant II12, sealant III13, colourama resistance layer 14, black matrix layer 15 and glass substrate 16 form.In silicon chip substrate 1, be manufactured with multiple anode pixels electrodes 2, the material of anode pixels electrode 2 is monolayer material or multilayer materials, described monolayer material is Al, Mo or W, composite material is Mo/Al/Mo, Al/Mo, Cr/Al/Mo or Cr/Ti/Al/Mo, the gross thickness of anode pixels electrode 2 is between 60nm～550nm, described anode pixels electrode 15 is through graphical technique, form independently pixel electrode, elemental area be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, described graphical technique can be used dry etch process to form, gap between pixel electrode after graphical is between 0.3 μ m～1.5 μ m, cause device short circuit in order to prevent gap, between gap, be filled with polymer insulation layer 3 so that mutually insulated between anode pixels electrode 2, on anode pixels electrode 2, be manufactured with device layer, device layer is successively by hole injection layer 4, hole transmission layer 5, luminescent layer 6, exciton barrier layer 7, electron transfer layer 8, electron injecting layer 9 and negative electrode layer 10 form, device layer is provided with encapsulation thin film encapsulation layers, thin film encapsulation layers forms by three layers, ground floor is the high refractive index layer that thermal evaporation forms, by organic compound layer Alq
3with inorganic compound layer MoO
3composition, thickness is at 30nm～100nm, the thin layer of the described second layer for using plasma technique for atomic layer deposition (PEALD) method to prepare, this thin layer is Al
2o
3or TiO
3, thickness is at 20～200nm, described the 3rd layer is organic polymer sealant, and this sealant uses spin coating or scrapes figure or inkjet printing methods formation, and film thickness is at 300～800nm.In glass substrate 16 one side relative with thin film encapsulation layers, be manufactured with multiple colourama resistance layers 14, between each colourama resistance layer 14, be separated into separate unit by black matrix layer 15, chromatic filter layer and black matrix can use the method for photoetching to make on glass substrate 15, the area of single chromatic filter layer be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, consistent with pixel size, the about 0.5um～1.5um of thickness; The area of black matrix be (0.3 μ m～1.5 μ m) × (9 μ m～15 μ are m), consistent with pixel separation, thickness 0.5um～1.5 μ m.The glass substrate 16 that is arranged in the superiors, by the adhesive glue of the surrounding laminating process that is connected with silicon chip substrate laminating, can first be coated bonded adhesives on silicon substrate, and use precise glue dispensing machine is controlled, the width 0.5mm～1.5mm of glue, the thickness 0.2um～1.8um of glue; Use accurate abutted equipment that silicon substrate and color film glass substrate are carried out to precision laminating, realize pixel electrode corresponding one by one with chromatic filter layer.
Embodiment bis-.
As shown in Figure 1,3.
A kind of manufacture method of miniature active matrix type organic luminous display device comprises that the OLED device layer on making, the anode electrode of the anode pixels electrode in silicon chip substrate is made, the thin film encapsulation layers of encapsulation OLED structure makes, is positioned at that chromatic filter layer and black matrix on glass substrate made, gluing and fitting with glass substrate on silicon substrate.Concrete steps are as follows:
(1) anode pixels electrode fabrication; Process is: silicon chip substrate is cleaned, and uses sputtering method or electron-beam vapor deposition method deposition anode electrode, uses dry etching method to carry out anode pixels electrode pattern, elemental area be (3 μ m～5 μ m) × (9 μ m～15 μ m) between.As shown in Figure 1
The material therefor of described anode pixels electrode is the monolayer materials such as Al, Mo, W, also comprises the multi-layered material structures such as Mo/Al/Mo, Al/Mo, Cr/Al/Mo, Cr/Ti/Al/Mo, and the gross thickness of electrode is between 60nm～550nm.
Described anode pixels electrode patternization is further used polymer insulation layer, as polyimide(polyimides after forming) carry out gap-fill.
(2) making of device layer; After anode pixels electrode fabrication completes, carry out the making of OLED device layer, comprise hole injection layer, hole transmission layer, luminescent layer, exciton barrier layer, electron transfer layer, electron injecting layer, negative electrode layer.As Fig. 3
(3) encapsulation of device layer, OLED structure is used three-layer thin-film sealant, and ground floor uses the transparent material of high index of refraction, uses thermal evaporation method to form, and is organic compound layer: Alq
3; Inorganic compound layer: MoO
3, thickness is at 30nm～100nm.Second layer thin film encapsulation layers can use the preparation of plasma technique for atomic layer deposition (PEALD) method, and this thin layer is Al
2o
3, TiO
3deng, thickness is at 20～200nm.Three-layer thin-film sealant is organic polymer sealant, and this sealant uses spin coating or the method such as figure or inkjet printing of scraping forms, and film thickness is at 300～600nm.
(4) chromatic filter layer and black matrix layer are made; Blank glass substrate is cleaned, and spin coating red-green-blue color photoresist layer respectively, uses photoetching method to carry out graphically.Black matrix layer is finally set again.The area of single chromatic filter layer be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, consistent with pixel size, thickness 0.5um～1.5um.The area of black matrix be (0.3 μ m～1.5 μ m) × (9 μ m～15 μ are m), consistent with pixel separation, thickness 0.5um～1.5um.
(5) silicon substrate and the laminating of color filter film glass substrate; First in silicon chip substrate, coat bonded adhesives, use precise glue dispensing machine to control, the width 0.5mm～1.5mm of glue, the thickness 0.2um～1.8um of glue.Use accurate abutted equipment that silicon substrate and colorized optical filtering film glass are carried out to precision laminating, Anawgy accuracy is less than 0.5 μ m, realizes pixel electrode corresponding one by one with chromatic filter layer.Meanwhile, this colorized optical filtering film glass also plays the effect that micro-display device is protected.
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.Those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public specific embodiment.
In addition, the present invention is described in detail in conjunction with schematic diagram, in the time that the embodiment of the present invention is described in detail in detail; for ease of explanation; represent that the profile of device architecture can disobey general ratio and do local amplification, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition in actual fabrication, should comprise, the three-dimensional space of length, width and the degree of depth.
Example one.
The invention provides a kind of preparation method who realizes the miniature AMOLED display of high-resolution color.AMOLED display comprises anode, negative electrode, and the luminescent layer being clipped in the middle.The resolution sizes of miniature AMOLED display is determined by the pattern precision of anode.The anode that the invention provides a kind of feasible fine is prepared scheme.With reference to figure 1, first deposition anode film in silicon chip substrate, electricity compatibility in the middle of anode material requirement and silicon chip substrate and OLED luminescent layer, can choice for use Al, Mo, the monolayer material such as W, also can select the multi-layered material structures such as Mo/Al/Mo, Al/Mo, Cr/Al/Mo, Cr/Ti/Al/Mo, the gross thickness of electrode is between 60nm～250nm.
Secondly,, in order to realize high patterning precision, choice for use plasma dry etching means are carried out graphically.Further also can select the means such as laser ablation, realize anode pattern.
Finally, in order to ensure that the electrode process of different-thickness is to the compatibility of device, use polymer insulation layer antianode gap to fill, can OLED device breakdown and short circuit.Described polymer insulation layer can be polyimide(polyimides) etc. material, but be not limited to this.
Example two.
The invention provides a kind of preparation method who realizes the miniature AMOLED display of high-resolution color.The encapsulating method of use of the present invention can be realized the high reliability of display device.Use three-decker to implement the sealing to display device.Ground floor uses the transparent material of high index of refraction, uses thermal evaporation method to form, and is organic compound layer: Alq3; Inorganic compound layer: MoO
3, thickness is at 30nm～100nm.Use thermal evaporation method can not damage OLED device.Second layer thin film encapsulation layers can use the preparation of plasma technique for atomic layer deposition (PEALD) method, and this thin layer is Al
2o
3, TiO
3deng, thickness is at 20～200nm.Use PEALD method to make second layer diaphragm seal and there is higher film compactness.Shown in figure 2, PEALD, compared with common hot ALD, can produce better water oxygen barriering effect.Three-layer thin-film sealant is organic polymer sealant, and this sealant uses spin coating or the method such as figure or inkjet printing of scraping forms, and film thickness is at 300～600nm.
Example three.
When miniature AMOLED display is realized colorize, conventionally use the scheme in AMLCD, use color filter film.The present invention utilizes the color filter film production program of AMLCD, first independently on blank glass, produce colourama resistance layer and black matrix layer, separate making with the OLED technique on silicon chip, the reliability of steam on OLED device and the impact in life-span that can avoid oled layer on silicon chip to prepare colourama resistance layer time, produce.Shown in figure 3, wherein 1 is silicon chip substrate, the 2nd, and pixel electrode, the 3rd, polyimide insulating barrier, the 4th, hole injection layer, the 5th, hole transmission layer, the 6th, luminescent layer, the 7th, electron transfer layer, the 8th, electron injecting layer, the 9th, negative electrode layer, the 10th, sealant I, the 11st, sealant II, the 12nd, sealant III, the 13rd, colourama resistance layer, the 14th, black matrix layer, 15 is glass substrate.On blank glass, spin coating red-green-blue color photoresist layer respectively, uses photoetching method to carry out graphically.Black matrix layer is finally set again.The area of single chromatic filter layer be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, consistent with pixel size, thickness 0.5um～1.5um.The area of black matrix be (0.3 μ m～1.5 μ m) × (9 μ m～15 μ are m), consistent with pixel separation, thickness 0.5um～1.5um.
According to method provided by the invention, silicon substrate and color film glass baseplate-laminating process are that the first bonded adhesives of coating on silicon substrate, uses precise glue dispensing machine to control, the width 0.5mm～1.5mm of glue, the thickness 0.2um～1.8um of glue.Use accurate abutted equipment that silicon substrate and color film glass substrate are carried out to precision laminating, Anawgy accuracy is less than 0.5 μ m, realizes pixel electrode corresponding one by one with chromatic filter layer.Meanwhile, this color film glass also plays the effect that micro-display device is protected.Shown in figure 4, the miniature AMOLED display after laminating.
The part that the present invention does not relate to prior art that maybe can adopt same as the prior art is realized.
Claims (10)
1. a miniature active matrix type organic luminous display device, it comprises silicon chip substrate (1) and glass substrate (15), it is characterized in that being manufactured with multiple anode pixels electrodes (2) in described silicon chip substrate (1), between each anode pixels electrode (2) by insulating barrier (3) mutually insulated with planarization is carried out in gap, on anode pixels electrode (2), be manufactured with device layer, device layer is provided with encapsulation thin film encapsulation layers, in glass substrate (16) one side relative with thin film encapsulation layers, be manufactured with multiple colourama resistance layers (14), between each colourama resistance layer (14), be separated into separate unit by black matrix layer (15), the glass substrate (16) that is positioned at the superiors is connected with silicon chip substrate laminating by the adhesive glue of surrounding.
2. display according to claim 1, the material that it is characterized in that described anode pixels electrode (2) is monolayer material or multilayer materials, described monolayer material is Al, Mo or W, composite material is Mo/Al/Mo, Al/Mo, Cr/Al/Mo or Cr/Ti/Al/Mo, and the gross thickness of anode pixels electrode (2) is between 60nm～550nm.
3. display according to claim 1, it is characterized in that described anode pixels electrode (16) is through graphical technique, form independently pixel electrode, elemental area be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, described graphical technique is used dry etch process to form.
4. display according to claim 3, it is characterized in that gap between described pixel electrode after graphical is between 0.3 μ m～1.5 μ m, in order to prevent that gap from causing device short circuit, ensure the planarization of electrode simultaneously, between gap, be filled with polymer insulation layer (3).
5. display according to claim 1, is characterized in that described device layer is made up of hole injection layer (4), hole transmission layer (5), luminescent layer (6), exciton barrier layer (7), electron transfer layer (8), electron injecting layer (9) and negative electrode layer (10) successively.
6. display according to claim 1, is characterized in that described thin film encapsulation layers forms by three layers, and ground floor is the high refractive index layer that thermal evaporation forms, by organic compound layer Alq
3with inorganic compound layer MoO
3composition, thickness is at 30nm～100nm; The described second layer is the thin layer that uses plasma technique for atomic layer deposition PEALD method to prepare, and this thin layer is Al
2o
3or TiO
3, thickness is at 20～200nm; Described the 3rd layer is organic polymer sealant, and this sealant uses spin coating or scrapes figure or inkjet printing methods formation, and film thickness is at 300～800nm.
7. display according to claim 1, it is characterized in that using the method for photoetching at upper chromatic filter layer and the black matrix made of glass substrate (16), the area of single chromatic filter layer be (3 μ m～5 μ m) × (9 μ m～15 μ m) between, consistent with pixel size, about 0.5um～1.5 of thickness μ m; The area of black matrix be (0.3 μ m～1.5 μ m) × (9 μ m～15 μ are m), consistent with pixel separation, thickness 0.5um～1.5um.
8. display according to claim 1, it is characterized in that, in described silicon chip substrate (1) and glass substrate laminating process, first on silicon substrate, coating bonded adhesives, use precise glue dispensing machine to control, width 0.5mm～the 1.5mm of glue, the thickness 0.2um～1.8um of glue; Use accurate abutted equipment that silicon substrate and color film glass substrate are carried out to precision laminating, realize pixel electrode corresponding one by one with chromatic filter layer.
9. a miniature active matrix type organic luminous display device manufacture method, is characterized in that it comprises the following steps:
First, adopt graphical technique at the upper anode pixels electrode (2) of making of silicon chip substrate (1); Between anode pixels electrode (2), increase insulating barrier (3) to prevent anode pixels electric pole short circuit simultaneously;
Secondly, at the upper device layer being formed by hole injection layer (4), hole transmission layer (5), luminescent layer (6), exciton barrier layer (7), electron transfer layer (8), electron injecting layer (9) and negative electrode layer (10) successively of making of anode pixels electrode (2);
The 3rd, on device layer, install thin film encapsulation layers additional to avoid water oxygen to enter device layer;
The 4th, in glass substrate (16) one side relative with thin film encapsulation layers, make colourama resistance layer (14), then use black matrix layer (15) that colourama resistance layer (14) is separated into multiple separate units;
Finally, glass substrate (16) is connected with silicon chip substrate (1) bonding.
10. display according to claim 9, is characterized in that described thin film encapsulation layers forms by three layers, and ground floor is the high refractive index layer that thermal evaporation forms, by organic compound layer Alq
3with inorganic compound layer MoO
3composition, thickness is at 30nm～100nm; The thin layer of the described second layer for using plasma technique for atomic layer deposition (PEALD) method to prepare, this thin layer is Al
2o
3or TiO
3, thickness is at 20～200nm; Described the 3rd layer is organic polymer sealant, and this sealant uses spin coating or scrapes figure or inkjet printing methods formation, and film thickness is at 300～800nm.
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