WO2021114574A1 - Active-matrix-type organic light-emitting display - Google Patents

Active-matrix-type organic light-emitting display Download PDF

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Publication number
WO2021114574A1
WO2021114574A1 PCT/CN2020/090722 CN2020090722W WO2021114574A1 WO 2021114574 A1 WO2021114574 A1 WO 2021114574A1 CN 2020090722 W CN2020090722 W CN 2020090722W WO 2021114574 A1 WO2021114574 A1 WO 2021114574A1
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layer
emitting display
organic light
anode
pixel electrode
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PCT/CN2020/090722
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French (fr)
Chinese (zh)
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刘腾飞
杨建兵
彭劲松
张阳
顾文彬
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南京国兆光电科技有限公司
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Publication of WO2021114574A1 publication Critical patent/WO2021114574A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the utility model relates to a display device, in particular to an organic light emitting diode display, specifically a miniature active matrix organic light emitting display based on a dry anode process.
  • An organic light emitting diode (OLED) display is a self-luminous display device that displays images by using organic light emitting diodes that emit light. Light is produced by controlling the energy produced when excitons fall back from an excited state. Excitons are generated by the combination of electrons and holes in the organic emission layer.
  • an organic light emitting diode display includes a transistor drive matrix and an organic light emitting diode display unit.
  • the display size of an organic light emitting diode display manufactured using monocrystalline silicon as a substrate is usually less than 1 inch, and belongs to a miniature active matrix organic light emitting diode display.
  • processes such as color filter films in LCD displays are usually used.
  • the metal anode electrode structure prepared by the wet electrode process is mostly concave (also called inverted T-shaped) structure.
  • This electrode structure has the defect of unstable pattern, and when combined with the vacuum evaporation process, there is a hidden danger of air gaps, resulting in The display has uneven lighting.
  • the use experience of the active matrix organic light emitting display is reduced.
  • the utility model proposes an active matrix organic light emitting display.
  • An active matrix organic light-emitting display which includes a silicon substrate substrate and a glass substrate.
  • the feature is that a plurality of anode pixel electrodes are arranged on the silicon substrate substrate, and each anode pixel electrode is insulated and opposed to each other by an insulating layer. The gap is flattened; the device layer is provided on the anode pixel electrode, and the device layer is provided with a film sealing layer for packaging; a plurality of color photoresist layers are provided on the side of the film sealing layer opposite to the glass substrate, and each color photoresist layer They are separated into independent units by a black matrix; the color photoresist layer is connected to the glass substrate; the anode pixel electrode corresponds to the color photoresist layer one to one.
  • the gaps between adjacent anode pixel electrodes are U-shaped, and the gaps are filled with polymer to form an insulating layer.
  • the pixel area of the anode pixel electrode (2) is between (3 ⁇ m-5 ⁇ m) ⁇ (9 ⁇ m-15 ⁇ m).
  • the material of the anode pixel electrode is Al or Ag, and the total thickness of the anode pixel electrode is between 60 nm and 550 nm.
  • the reflectivity of the thin film of the anode pixel electrode metal is above 380 nm to 780 nm.
  • the device layer includes a hole injection layer, a hole transport layer, a light emitting layer, an exciton barrier layer, an electron transport layer, an electron injection layer, and a cathode electrode layer that are sequentially arranged, and the hole injection layer is arranged on the anode pixel.
  • the cathode electrode layer is connected to the film sealing layer.
  • the thin film sealing layer includes a high refractive index layer, a thin film layer, and an organic polymer sealing layer in sequence, the high refractive index layer is connected to the device layer, and the organic polymer sealing layer is connected to the color photoresist layer.
  • the high refractive index layer is composed of an organic compound layer Alq3 and an inorganic compound layer MoO 3 with a thickness of 30nm-100nm; the thin film layer is Al 2 O 3 or TiO 3 with a thickness of 20nm-200nm; the thickness of the organic polymer sealing layer It is 300nm ⁇ 800nm.
  • the area of a single color filter layer is between (3 ⁇ m ⁇ 5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m), which is consistent with the pixel area of the anode pixel electrode, and the thickness is 0.5 ⁇ m ⁇ 1.5 ⁇ m; the area of the black matrix is (0.3 ⁇ m ⁇ 1.5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m), consistent with the pixel interval, thickness 0.5 ⁇ m ⁇ 1.5 ⁇ m.
  • the color photoresist layer and the film sealing layer are bonded by an adhesive glue
  • the width of the glue is 0.5 mm to 1.5 mm
  • the thickness of the glue is 0.2 ⁇ m to 1.8 ⁇ m.
  • the utility model is based on the outer U-shaped metal anode structure made by the dry etching process, instead of the concave metal anode structure made by the wet process, the area of the substrate contact area of the metal anode is increased, and the substrate adhesion is improved Furthermore, this structure can avoid air gaps generated in the metal recesses during the subsequent thin film process, and improve the luminous display effect.
  • the display in the utility model adopts a three-layer composite film packaging layer, which is used to extend the lateral water and oxygen transmission distance of defects in the packaging layer.
  • the three-layer film can significantly improve the packaging effect.
  • Figure 1 is a schematic diagram of the structure of the utility model.
  • Figure 2 is a schematic diagram of the anode etching preparation of the utility model.
  • an active matrix organic light-emitting display which includes a silicon substrate substrate 1 and a glass substrate 16, the silicon substrate substrate 1 is provided with a plurality of anode pixel electrodes 2 between each anode pixel electrode 2
  • the insulating layer 3 material is polyimide
  • the device layer is provided on the anode pixel electrode 2
  • the device layer is provided with a thin film sealing layer for packaging; on the side of the thin film sealing layer opposite to the glass substrate 16
  • the gaps between adjacent anode pixel electrodes 2 are U-shaped, and the gaps are filled with polymer to form the insulating layer 3.
  • the anode pixel electrode 2 undergoes a patterning process to form an independent pixel electrode, and the pixel area is between (3 ⁇ m ⁇ 5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m).
  • the material of the anode pixel electrode 2 is a high-reflectivity metal, the high-reflectivity metal is Al or Ag, the total thickness of the anode pixel electrode 2 is between 60nm and 550nm, and the metal film reflectivity of the anode pixel electrode 2 is 380nm Above 780nm.
  • the metal anode patterning process is formed by a dry etching process.
  • a dry etching machine is used to etch to prepare a planarized metal anode pattern, and the preparation process parameters are determined according to the equipment parameters , Including but not limited to a certain etching process gas ratio.
  • the gap between the pixel electrodes after dry etching patterning is between 0.3 ⁇ m and 1.5 ⁇ m.
  • the gap is filled with a polymer insulating layer 3 so that the anode pixel electrodes 2 are mutually connected. Insulation, the manufacturing method of which is to use a photolithography process to prepare an arrayed organic insulating isolation pattern at the gap, the thickness of which is 70nm-300nm.
  • An OLED device layer is fabricated on the anode pixel electrode 2.
  • the device layer includes a hole injection layer 4, a hole transport layer 5, a light-emitting layer 6, an exciton blocking layer 7, an electron transport layer 8, and an electron injection layer arranged in sequence. 9 and the cathode electrode layer 10.
  • the hole injection layer 4 is arranged on the anode pixel electrode 2; the cathode electrode layer 10 is connected to the thin film sealing layer.
  • the thin film sealing layer includes a high refractive index layer 11, a thin film layer 12, and an organic polymer sealing layer 13 in sequence.
  • the high refractive index layer 11 is connected to the device layer, and the organic polymer sealing layer 13 is connected to the color photoresist layer 14.
  • the high refractive index layer 11 is formed by thermal evaporation and is composed of an organic compound layer Alq3 and an inorganic compound layer MoO 3 , with a thickness of 30 nm to 100 nm;
  • the thin film layer 12 is a thin film layer prepared by the plasma atomic layer deposition technology (PEALD) method, which is Al 2 O 3 or TiO 3 has a thickness of 20 nm to 200 nm;
  • the organic polymer sealing layer 13 is formed by spin coating, scratching or inkjet printing, and has a thickness of 300 nm to 800 nm.
  • the color photoresist layer 14 and the black matrix 15 can be made on the glass substrate 16 by photolithography.
  • the area of a single color filter layer is (3 ⁇ m ⁇ 5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m), which is consistent with the pixel size and thickness About 0.5 ⁇ m ⁇ 1.5 ⁇ m;
  • the area of the black matrix is (0.3 ⁇ m ⁇ 1.5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m), which is consistent with the pixel interval, and the thickness is 0.5um ⁇ 1.5 ⁇ m.
  • the color photoresist layer 14 made on the glass substrate 16 and the thin film sealing layer generated on the silicon substrate substrate 1 are connected by the surrounding adhesive glue. During the bonding process: the adhesive glue can be applied on the silicon substrate first.
  • the width of the glue is 0.5mm ⁇ 1.5mm, and the thickness of the glue is 0.2 ⁇ m ⁇ 1.8 ⁇ m; precision bonding equipment is used to precisely bond the silicon substrate and the color film glass substrate to realize the pixel electrode and color filter One-to-one correspondence between optical layers.
  • the production method of the utility model includes the production of the anode pixel electrode on the silicon substrate, the production of the OLED device layer on the anode electrode, the production of the thin film sealing layer encapsulating the OLED structure, the color filter layer and the black matrix on the glass substrate Fabrication, coating on silicon substrate and bonding with glass substrate. Specific steps are as follows:
  • the production of anode pixel electrode is: cleaning the silicon substrate, depositing the anode electrode by sputtering method or electron beam evaporation method, and patterning the anode pixel electrode by dry etching method.
  • the pixel area is (3 ⁇ m ⁇ 5 ⁇ m) ) ⁇ (9 ⁇ m ⁇ 15 ⁇ m).
  • the material of the anode pixel electrode is a metal with high reflectivity, the metal with high reflectivity is Al or Ag, and the total thickness of the anode pixel electrode (2) is between 60 nm and 550 nm.
  • a polymer insulating layer such as polyimide, is further used for gap filling.
  • the OLED device layer is fabricated, including the hole injection layer, the hole transport layer, the light emitting layer, the exciton barrier layer, the electron transport layer, the electron injection layer, and the cathode Electrode layer. As shown in Figure 3
  • the device layer is packaged.
  • the OLED structure uses a three-layer thin film sealing layer.
  • the first layer uses a transparent material with high refractive index and is formed by a thermal evaporation method. It is an organic compound layer: Alq 3 ; an inorganic compound layer: MoO 3 , thickness In 30nm ⁇ 100nm.
  • the second thin-film sealing layer can be prepared using a plasma atomic layer deposition (PEALD) method.
  • the thin-film layer is Al 2 O 3 or the like, and the thickness is 20-200 nm.
  • the third film sealing layer is an organic polymer sealing layer, and the sealing layer is formed by spin coating, scratching, or inkjet printing, and the thickness of the film is 300-600 nm.
  • the blank glass substrate is cleaned, the red, green and blue color photoresist layers are spin-coated respectively, and the photolithography method is used for patterning. Finally, set the black matrix layer.
  • the area of a single color filter layer is between (3 ⁇ m ⁇ 5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m), which is consistent with the pixel size, and the thickness is 0.5um ⁇ 1.5um.
  • the area of the black matrix is (0.3 ⁇ m ⁇ 1.5 ⁇ m) ⁇ (9 ⁇ m ⁇ 15 ⁇ m), which is consistent with the pixel interval, and the thickness is 0.5um ⁇ 1.5um.
  • the silicon substrate is bonded to the glass substrate of the color filter film; the adhesive glue is first coated on the silicon substrate substrate, and the glue is controlled by a precision dispenser.
  • the width of the glue is 0.5mm ⁇ 1.5mm, and the thickness of the glue is 0.2um. ⁇ 1.8um.
  • the silicon substrate and the color filter film glass are precisely bonded, and the bonding accuracy is less than 0.5 ⁇ m, so that the pixel electrode and the color filter layer correspond to each other.
  • the color filter film glass also plays a role in protecting the micro display device.
  • the present utility model is described in detail in conjunction with schematic diagrams.
  • the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which is not here.
  • the scope of protection of the utility model should be limited.
  • the three-dimensional dimensions of length, width and depth should be included in the actual production.
  • the part not involved in the utility model is the same as the prior art or can be realized by using the prior art.

Abstract

Disclosed is an active-matrix-type organic light-emitting display. The active-matrix-type organic light-emitting display comprises a silicon substrate underlayer and a glass substrate, wherein the silicon substrate underlayer is provided with a plurality of anode pixel electrodes, the anode pixel electrodes are insulated from one another by means of insulating layers, and gaps between the anode pixel electrodes are planarized by means of the insulating layers; a device layer is arranged on the anode pixel electrodes, and a thin-film sealing layer for packaging is arranged on the device layer; a plurality of color photoresist layers are arranged on the surface of the thin-film sealing layer facing the glass substrate, and the color photoresist layers are separated into independent units by means of black matrixes; the color photoresist layers are connected to the glass substrate; and the anode pixel electrodes correspond to the color photoresist layers on a one-to-one basis. A traditional concave metal anode structure is replaced by the external U-shaped metal anode structure of the present utility model, wherein the area of an underlayer contact region of a metal anode of the external U-shaped metal anode structure is increased, and the underlayer adhesion is improved. Furthermore, the structure can avoid an air gap generated at a metal concave part in a subsequent thin-film process, thereby improving the light-emitting display effect.

Description

有源矩阵式有机发光显示器Active matrix organic light emitting display 技术领域Technical field
本实用新型涉及一种显示器件，尤其是一种有机发光二极管显示器，具体地说是一种基于干法阳极工艺的微型有源矩阵有机发光显示器。The utility model relates to a display device, in particular to an organic light emitting diode display, specifically a miniature active matrix organic light emitting display based on a dry anode process.
背景技术Background technique
有机发光二极管(OLED)显示器是一种通过使用发光的有机发光二极管来显示图像的自发光显示装置。通过控制激子从激发态回落时产生的能量来产生光。通过电子和空穴在有机发射层中结合来产生激子。通常有机发光二极管显示器包括晶体管驱动矩阵和有机发光二极管显示单元。An organic light emitting diode (OLED) display is a self-luminous display device that displays images by using organic light emitting diodes that emit light. Light is produced by controlling the energy produced when excitons fall back from an excited state. Excitons are generated by the combination of electrons and holes in the organic emission layer. Generally, an organic light emitting diode display includes a transistor drive matrix and an organic light emitting diode display unit.
使用单晶硅作为衬底制作晶体管驱动矩阵，由于单晶硅具有非常高的迁移率，所以可以实现非常高的分辨率。使用单晶硅作为衬底制作的有机发光二极管显示器的显示尺寸通常小于1英寸，属于微型有源矩阵有机发光二极管显示器。为了实现微型有源矩阵有机发光二极管显示器的彩色化，通常使用LCD显示中的彩色滤光膜等工艺。Using single crystal silicon as the substrate to fabricate the transistor drive matrix, because single crystal silicon has a very high mobility, very high resolution can be achieved. The display size of an organic light emitting diode display manufactured using monocrystalline silicon as a substrate is usually less than 1 inch, and belongs to a miniature active matrix organic light emitting diode display. In order to realize the colorization of a miniature active matrix organic light emitting diode display, processes such as color filter films in LCD displays are usually used.
采用湿法电极工艺制备的金属阳极电极结构多为内凹型(也称倒T型)结构，该电极结构存在图形不稳定的缺陷问题，且配合真空蒸发工艺时，存在产生空气隙的隐患，导致显示器出现发光不均匀现象。降低了有源矩阵式有机发光显示器的使用体验下降。The metal anode electrode structure prepared by the wet electrode process is mostly concave (also called inverted T-shaped) structure. This electrode structure has the defect of unstable pattern, and when combined with the vacuum evaporation process, there is a hidden danger of air gaps, resulting in The display has uneven lighting. The use experience of the active matrix organic light emitting display is reduced.
实用新型内容Utility model content
本实用新型为解决背景技术中存在的问题，提出了一种有源矩阵式有机发光显示器。In order to solve the problems existing in the background technology, the utility model proposes an active matrix organic light emitting display.
技术方案：Technical solutions:
一种有源矩阵式有机发光显示器，它包括硅基板衬底和玻璃基板其特征是所述的硅基板衬底上设置多个阳极像素电极，各阳极像素电极之间通过绝缘层相互绝缘和对间隙进行平坦化；在阳极像素电极上设置器件层，器件层上设有封装用薄膜密封层；在薄膜密封层与玻璃基板相对的一面上设置有多个彩色光阻层，各彩色光阻层之间通过黑色矩阵分隔成独立单元；彩色光阻层与玻璃基板相连；所述阳极像素电极与彩色光阻层一一对应。An active matrix organic light-emitting display, which includes a silicon substrate substrate and a glass substrate. The feature is that a plurality of anode pixel electrodes are arranged on the silicon substrate substrate, and each anode pixel electrode is insulated and opposed to each other by an insulating layer. The gap is flattened; the device layer is provided on the anode pixel electrode, and the device layer is provided with a film sealing layer for packaging; a plurality of color photoresist layers are provided on the side of the film sealing layer opposite to the glass substrate, and each color photoresist layer They are separated into independent units by a black matrix; the color photoresist layer is connected to the glass substrate; the anode pixel electrode corresponds to the color photoresist layer one to one.
优选的，相邻阳极像素电极之间的间隔空隙呈U字型，间隔空隙处填充聚合物形成绝缘层。Preferably, the gaps between adjacent anode pixel electrodes are U-shaped, and the gaps are filled with polymer to form an insulating layer.
优选的，阳极像素电极(2)的像素面积为(3μm～5μm)×(9μm～15μm)之间。Preferably, the pixel area of the anode pixel electrode (2) is between (3 μm-5 μm)×(9 μm-15 μm).
优选的，阳极像素电极的材料为Al或Ag，阳极像素电极的总厚度在60nm～550nm之间。Preferably, the material of the anode pixel electrode is Al or Ag, and the total thickness of the anode pixel electrode is between 60 nm and 550 nm.
优选的，阳极像素电极金属的薄膜反射率在380nm～780nm以上。Preferably, the reflectivity of the thin film of the anode pixel electrode metal is above 380 nm to 780 nm.
优选的，所述器件层包括顺次设置的空穴注入层、空穴传输层、发光层、激子阻隔层、电子传输层、电子注入层和阴极电极层，空穴注入层设置在阳极像素电极上；阴极电极层与薄膜密封层相连。Preferably, the device layer includes a hole injection layer, a hole transport layer, a light emitting layer, an exciton barrier layer, an electron transport layer, an electron injection layer, and a cathode electrode layer that are sequentially arranged, and the hole injection layer is arranged on the anode pixel. On the electrode; the cathode electrode layer is connected to the film sealing layer.
优选的，所述薄膜密封层包括顺次高折射率层、薄膜层、有机聚合物密封层，高折射率层与器件层连接，有机聚合物密封层与彩色光阻层连接。Preferably, the thin film sealing layer includes a high refractive index layer, a thin film layer, and an organic polymer sealing layer in sequence, the high refractive index layer is connected to the device layer, and the organic polymer sealing layer is connected to the color photoresist layer.
优选的，高折射率层由有机化合物层Alq3和无机化合物层MoO 3组成，厚度在30nm～100nm；薄膜层为Al 2O 3或TiO 3，厚度在20nm～200nm；有机聚合物密封层的厚度为300nm～800nm。 Preferably, the high refractive index layer is composed of an organic compound layer Alq3 and an inorganic compound layer MoO 3 with a thickness of 30nm-100nm; the thin film layer is Al 2 O 3 or TiO 3 with a thickness of 20nm-200nm; the thickness of the organic polymer sealing layer It is 300nm～800nm.
优选的，单个彩色滤光层的面积为(3μm～5μm)×(9μm～15μm)之间，与阳极像素电极的像素面积一致，厚度为0.5μm～1.5μm；黑矩阵的面积为(0.3μm～1.5μm)×(9μm～15μm)，与像素间隔一致，厚度0.5μm～1.5μm。Preferably, the area of a single color filter layer is between (3μm～5μm)×(9μm～15μm), which is consistent with the pixel area of the anode pixel electrode, and the thickness is 0.5μm～1.5μm; the area of the black matrix is (0.3μm ～1.5μm)×(9μm～15μm), consistent with the pixel interval, thickness 0.5μm～1.5μm.
优选的，彩色光阻层与薄膜密封层由粘接胶贴合，胶的宽度0.5mm～1.5mm，胶的厚度0.2μm～1.8μm。Preferably, the color photoresist layer and the film sealing layer are bonded by an adhesive glue, the width of the glue is 0.5 mm to 1.5 mm, and the thickness of the glue is 0.2 μm to 1.8 μm.
本实用新型的有益效果The beneficial effects of the utility model
本实用新型基于干法刻蚀工艺制作的外U型金属阳极结构，取代了湿法工艺制备的内凹型金属阳极结构，其金属阳极的衬底接触区面积增大，衬底粘附性得到提升，进一步的，该结构可避免后续薄膜工艺过程中在金属内凹处产生的空气隙，提高发光显示效果。The utility model is based on the outer U-shaped metal anode structure made by the dry etching process, instead of the concave metal anode structure made by the wet process, the area of the substrate contact area of the metal anode is increased, and the substrate adhesion is improved Furthermore, this structure can avoid air gaps generated in the metal recesses during the subsequent thin film process, and improve the luminous display effect.
本实用新型中显示器采用了三层复合薄膜封装层，用于延长封装层缺陷的横向水氧传输距离。三层薄膜可显著提升封装效果。The display in the utility model adopts a three-layer composite film packaging layer, which is used to extend the lateral water and oxygen transmission distance of defects in the packaging layer. The three-layer film can significantly improve the packaging effect.
附图说明Description of the drawings
图1为本实用新型的结构示意图。Figure 1 is a schematic diagram of the structure of the utility model.
图2为本实用新型阳极刻制备蚀示意图。Figure 2 is a schematic diagram of the anode etching preparation of the utility model.
具体实施方式Detailed ways
下面结合实施例对本实用新型作进一步说明，但本实用新型的保护范围不限于此：In the following, the present utility model will be further described in conjunction with the embodiments, but the protection scope of the present utility model is not limited to this:
结合图1，一种有源矩阵式有机发光显示器，它包括硅基板衬底1和玻璃基板16，所述的硅基板衬底1上设置多个阳极像素电极2，各阳极像素电极2之间通过绝缘层3(材质为polyimide)相互绝缘和对间隙进行平坦化；在阳极像素电极2上设置器件层，器件层 上设有封装用薄膜密封层；在薄膜密封层与玻璃基板16相对的一面上设置有多个彩色光阻层14，各彩色光阻层14之间通过黑色矩阵15分隔成独立单元；彩色光阻层14与玻璃基板16相连；所述阳极像素电极2与彩色光阻层14一一对应。With reference to Figure 1, an active matrix organic light-emitting display, which includes a silicon substrate substrate 1 and a glass substrate 16, the silicon substrate substrate 1 is provided with a plurality of anode pixel electrodes 2 between each anode pixel electrode 2 The insulating layer 3 (material is polyimide) is mutually insulated and the gap is flattened; the device layer is provided on the anode pixel electrode 2, and the device layer is provided with a thin film sealing layer for packaging; on the side of the thin film sealing layer opposite to the glass substrate 16 There are a plurality of color photoresist layers 14 on which are separated into independent units by a black matrix 15; the color photoresist layer 14 is connected to the glass substrate 16; the anode pixel electrode 2 and the color photoresist layer 14 one-to-one correspondence.
结合图2，相邻阳极像素电极2之间的间隔空隙呈U字型，间隔空隙处填充聚合物形成绝缘层3。With reference to FIG. 2, the gaps between adjacent anode pixel electrodes 2 are U-shaped, and the gaps are filled with polymer to form the insulating layer 3.
阳极像素电极2经过图形化工艺，形成独立的像素电极，像素面积为(3μm～5μm)×(9μm～15μm)之间。The anode pixel electrode 2 undergoes a patterning process to form an independent pixel electrode, and the pixel area is between (3 μm˜5 μm)×(9 μm˜15 μm).
阳极像素电极2的材料为高反射率的金属，所述的高反射率金属为Al或Ag，阳极像素电极2的总厚度在60nm～550nm之间，阳极像素电极2金属的薄膜反射率在380nm～780nm以上。The material of the anode pixel electrode 2 is a high-reflectivity metal, the high-reflectivity metal is Al or Ag, the total thickness of the anode pixel electrode 2 is between 60nm and 550nm, and the metal film reflectivity of the anode pixel electrode 2 is 380nm Above 780nm.
所述的金属阳极图形化工艺为使用干法刻蚀工艺形成，在光刻涂胶工艺完成后，使用干法刻蚀机刻蚀制备平坦化的金属阳极图形，其制备工艺参数依据设备参数决定，包括但不限于一定的刻蚀工艺气体比例，上述比例的一种表现实施例为，N2∶Cl2＝70∶5，刻蚀时长为60s。The metal anode patterning process is formed by a dry etching process. After the photoresist coating process is completed, a dry etching machine is used to etch to prepare a planarized metal anode pattern, and the preparation process parameters are determined according to the equipment parameters , Including but not limited to a certain etching process gas ratio. An example of the above ratio is N2:Cl2=70:5, and the etching time is 60s.
干法刻蚀图形化后的像素电极之间的间隙在0.3μm～1.5μm之间，为了防止间隙造成器件短路，间隙之间填装有聚合物绝缘层3以使阳极像素电极2之间相互绝缘，其制作方法为使用光刻工艺，在间隙处制备阵列化有机绝缘隔离图形，其厚度为70nm～300nm。The gap between the pixel electrodes after dry etching patterning is between 0.3 μm and 1.5 μm. In order to prevent the gap from causing short circuit of the device, the gap is filled with a polymer insulating layer 3 so that the anode pixel electrodes 2 are mutually connected. Insulation, the manufacturing method of which is to use a photolithography process to prepare an arrayed organic insulating isolation pattern at the gap, the thickness of which is 70nm-300nm.
在阳极像素电极2上制作OLED器件层，所述器件层包括顺次设置的空穴注入层4、空穴传输层5、发光层6、激子阻隔层7、电子传输层8、电子注入层9和阴极电极层10，空穴注入层4设置在阳极像素电极2上；阴极电极层10与薄膜密封层相连。An OLED device layer is fabricated on the anode pixel electrode 2. The device layer includes a hole injection layer 4, a hole transport layer 5, a light-emitting layer 6, an exciton blocking layer 7, an electron transport layer 8, and an electron injection layer arranged in sequence. 9 and the cathode electrode layer 10. The hole injection layer 4 is arranged on the anode pixel electrode 2; the cathode electrode layer 10 is connected to the thin film sealing layer.
所述薄膜密封层包括顺次高折射率层11、薄膜层12、有机聚合物密封层13，高折射率层11与器件层连接，有机聚合物密封层13与彩色光阻层14连接。The thin film sealing layer includes a high refractive index layer 11, a thin film layer 12, and an organic polymer sealing layer 13 in sequence. The high refractive index layer 11 is connected to the device layer, and the organic polymer sealing layer 13 is connected to the color photoresist layer 14.
高折射率层11通过热蒸发形成，由有机化合物层Alq3和无机化合物层MoO 3组成，厚度在30nm～100nm；薄膜层12为使用等离子体原子层沉积技术(PEALD)方法制备的薄膜层，为Al 2O 3或TiO 3，厚度在20nm～200nm；有机聚合物密封层13使用旋涂或刮图或喷墨打印方法形成，厚度为300nm～800nm。 The high refractive index layer 11 is formed by thermal evaporation and is composed of an organic compound layer Alq3 and an inorganic compound layer MoO 3 , with a thickness of 30 nm to 100 nm; the thin film layer 12 is a thin film layer prepared by the plasma atomic layer deposition technology (PEALD) method, which is Al 2 O 3 or TiO 3 has a thickness of 20 nm to 200 nm; the organic polymer sealing layer 13 is formed by spin coating, scratching or inkjet printing, and has a thickness of 300 nm to 800 nm.
彩色光阻层14和黑色矩阵15可使用光刻的方法在玻璃基板16上制作，单个彩色滤光层的面积为(3μm～5μm)×(9μm～15μm)之间，与像素大小一致，厚度约0.5μm～1.5μm；黑矩阵的面积为(0.3μm～1.5μm)×(9μm～15μm)，与像素间隔一致，厚度0.5um～1.5μm。玻璃基板16上制作的彩色光阻层14与硅基板衬底1上生成的薄膜密封 层通过四周的粘接胶贴合相连，贴合过程中：可先在硅基板上涂上粘接胶，使用精密点胶机进行控制，胶的宽度0.5mm～1.5mm，胶的厚度0.2μm～1.8μm；使用精密贴合设备将硅基板与彩膜玻璃基板进行精密贴合，实现像素电极与彩色滤光层一一对应。The color photoresist layer 14 and the black matrix 15 can be made on the glass substrate 16 by photolithography. The area of a single color filter layer is (3μm～5μm)×(9μm～15μm), which is consistent with the pixel size and thickness About 0.5μm～1.5μm; the area of the black matrix is (0.3μm～1.5μm)×(9μm～15μm), which is consistent with the pixel interval, and the thickness is 0.5um～1.5μm. The color photoresist layer 14 made on the glass substrate 16 and the thin film sealing layer generated on the silicon substrate substrate 1 are connected by the surrounding adhesive glue. During the bonding process: the adhesive glue can be applied on the silicon substrate first. Use a precision dispenser to control, the width of the glue is 0.5mm～1.5mm, and the thickness of the glue is 0.2μm～1.8μm; precision bonding equipment is used to precisely bond the silicon substrate and the color film glass substrate to realize the pixel electrode and color filter One-to-one correspondence between optical layers.
本实用新型的制作方法：包括硅基板衬底上的阳极像素电极的制作、阳极电极上的OLED器件层制作、封装OLED结构的薄膜密封层制作、位于玻璃基板上的彩色滤光层和黑矩阵制作、在硅基板上涂胶及与玻璃基板贴合。具体步骤如下：The production method of the utility model includes the production of the anode pixel electrode on the silicon substrate, the production of the OLED device layer on the anode electrode, the production of the thin film sealing layer encapsulating the OLED structure, the color filter layer and the black matrix on the glass substrate Fabrication, coating on silicon substrate and bonding with glass substrate. Specific steps are as follows:
(一)阳极像素电极制作；过程为：硅基板衬底清洗，使用溅射法或电子束蒸发法沉积阳极电极，使用干法刻蚀方法进行阳极像素电极图案化，像素面积为(3μm～5μm)×(9μm～15μm)之间。(1) The production of anode pixel electrode; the process is: cleaning the silicon substrate, depositing the anode electrode by sputtering method or electron beam evaporation method, and patterning the anode pixel electrode by dry etching method. The pixel area is (3μm～5μm) )×(9μm～15μm).
所述阳极像素电极的材料为高反射率的金属，所述的高反射率金属为Al或Ag，阳极像素电极(2)的总厚度在60nm～550nm之间。The material of the anode pixel electrode is a metal with high reflectivity, the metal with high reflectivity is Al or Ag, and the total thickness of the anode pixel electrode (2) is between 60 nm and 550 nm.
所述的阳极像素电极图案化形成之后，进一步使用聚合物绝缘层，如polyimide(聚酰亚胺)进行间隙填充。After the anode pixel electrode is patterned and formed, a polymer insulating layer, such as polyimide, is further used for gap filling.
(二)器件层的制作；阳极像素电极制作完成之后，进行OLED器件层的制作，包括空穴注入层、空穴传输层、发光层、激子阻隔层、电子传输层、电子注入层、阴极电极层。如图3(2) Fabrication of the device layer: After the anode pixel electrode is fabricated, the OLED device layer is fabricated, including the hole injection layer, the hole transport layer, the light emitting layer, the exciton barrier layer, the electron transport layer, the electron injection layer, and the cathode Electrode layer. As shown in Figure 3
(三)器件层的封装，OLED结构使用三层薄膜密封层，第一层使用高折射率的透明材料，使用热蒸发方法形成，为有机化合物层：Alq 3；无机化合物层：MoO 3，厚度在30nm～100nm。第二层薄膜密封层可以使用等离子体原子层沉积技术(PEALD)方法制备，此薄膜层为Al 2O 3等，厚度在20～200nm。第三层薄膜密封层为有机聚合物密封层，此密封层使用旋涂或刮图或喷墨打印等方法形成，薄膜厚度在300～600nm。 (3) The device layer is packaged. The OLED structure uses a three-layer thin film sealing layer. The first layer uses a transparent material with high refractive index and is formed by a thermal evaporation method. It is an organic compound layer: Alq 3 ; an inorganic compound layer: MoO 3 , thickness In 30nm ~ 100nm. The second thin-film sealing layer can be prepared using a plasma atomic layer deposition (PEALD) method. The thin-film layer is Al 2 O 3 or the like, and the thickness is 20-200 nm. The third film sealing layer is an organic polymer sealing layer, and the sealing layer is formed by spin coating, scratching, or inkjet printing, and the thickness of the film is 300-600 nm.
(四)彩色滤光层和黑矩阵层制作；对空白玻璃基板进行清洗，分别旋涂红绿蓝彩色光阻层，使用光刻方法进行图形化。最后再设置黑矩阵层。单个彩色滤光层的面积为(3μm～5μm)×(9μm～15μm)之间，与像素大小一致，厚度0.5um～1.5um。黑矩阵的面积为(0.3μm～1.5μm)×(9μm～15μm)，与像素间隔一致，厚度0.5um～1.5um。(4) Fabrication of the color filter layer and the black matrix layer; the blank glass substrate is cleaned, the red, green and blue color photoresist layers are spin-coated respectively, and the photolithography method is used for patterning. Finally, set the black matrix layer. The area of a single color filter layer is between (3μm～5μm)×(9μm～15μm), which is consistent with the pixel size, and the thickness is 0.5um～1.5um. The area of the black matrix is (0.3μm～1.5μm)×(9μm～15μm), which is consistent with the pixel interval, and the thickness is 0.5um～1.5um.
(五)硅基板与彩色滤光膜玻璃基板贴合；先在硅基板衬底上涂上粘接胶，使用精密点胶机进行控制，胶的宽度0.5mm～1.5mm，胶的厚度0.2um～1.8um。使用精密贴合设备将硅基板与彩色滤光膜玻璃进行精密贴合，贴合精度小于0.5μm，实现像素电极与彩色滤光层一一对应。同时，此彩色滤光膜玻璃也起到对微显示器件进行保护的作用。(5) The silicon substrate is bonded to the glass substrate of the color filter film; the adhesive glue is first coated on the silicon substrate substrate, and the glue is controlled by a precision dispenser. The width of the glue is 0.5mm ~ 1.5mm, and the thickness of the glue is 0.2um. ~1.8um. Using precision bonding equipment, the silicon substrate and the color filter film glass are precisely bonded, and the bonding accuracy is less than 0.5μm, so that the pixel electrode and the color filter layer correspond to each other. At the same time, the color filter film glass also plays a role in protecting the micro display device.
为了更清楚地说明本实用新型实施例或现有技术中的技术方案，下面将对实施例或现 有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是本实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。本领域技术人员可以在不违背本实用新型内涵的情况下做类似推广，因此本实用新型不受下面公开的具体实施例的限制。In order to more clearly explain the technical solutions in the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work. Those skilled in the art can make similar promotion without violating the connotation of the present utility model. Therefore, the present utility model is not limited by the specific embodiments disclosed below.
此外，本实用新型结合示意图进行详细描述，在详述本实用新型实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本实用新型保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。In addition, the present utility model is described in detail in conjunction with schematic diagrams. When detailed embodiments of the present utility model are described, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which is not here. The scope of protection of the utility model should be limited. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual production.
本实用新型未涉及部分与现有技术相同或可采用现有技术加以实现。The part not involved in the utility model is the same as the prior art or can be realized by using the prior art.

Claims (10)

  1. 一种有源矩阵式有机发光显示器，它包括硅基板衬底(1)和玻璃基板(16)，其特征在于所述的硅基板衬底(1)上设置多个阳极像素电极(2)，各阳极像素电极(2)之间通过绝缘层(3)相互绝缘和对间隙进行平坦化；在阳极像素电极(2)上设置器件层，器件层上设有封装用薄膜密封层；在薄膜密封层与玻璃基板(16)相对的一面上设置有多个彩色光阻层(14)，各彩色光阻层(14)之间通过黑色矩阵(15)分隔成独立单元；彩色光阻层(14)与玻璃基板(16)相连；所述阳极像素电极(2)与彩色光阻层(14)一一对应。An active matrix organic light emitting display, which comprises a silicon substrate substrate (1) and a glass substrate (16), characterized in that a plurality of anode pixel electrodes (2) are arranged on the silicon substrate substrate (1), Each anode pixel electrode (2) is insulated from each other by an insulating layer (3) and the gap is flattened; a device layer is provided on the anode pixel electrode (2), and a film sealing layer for packaging is provided on the device layer; the film is sealed The opposite side of the layer and the glass substrate (16) is provided with a plurality of color photoresist layers (14), and each color photoresist layer (14) is separated into independent units by a black matrix (15); the color photoresist layer (14) ) Is connected to the glass substrate (16); the anode pixel electrode (2) is in one-to-one correspondence with the color photoresist layer (14).
  2. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于相邻阳极像素电极(2)之间的间隔空隙呈U字型，间隔空隙处填充聚合物形成绝缘层(3)。The active matrix organic light-emitting display according to claim 1, wherein the gaps between adjacent anode pixel electrodes (2) are U-shaped, and the gaps are filled with polymer to form an insulating layer (3) .
  3. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于阳极像素电极(2)的像素面积为(3μm～5μm)×(9μm～15μm)之间。The active matrix organic light emitting display according to claim 1, wherein the pixel area of the anode pixel electrode (2) is between (3 μm-5 μm)×(9 μm-15 μm).
  4. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于阳极像素电极(2)的材料为Al或Ag，阳极像素电极(2)的总厚度在60nm～550nm之间。The active matrix organic light emitting display according to claim 1, wherein the material of the anode pixel electrode (2) is Al or Ag, and the total thickness of the anode pixel electrode (2) is between 60 nm and 550 nm.
  5. 根据权利要求4所述的一种有源矩阵式有机发光显示器，其特征在于阳极像素电极(2)金属的薄膜反射率在380nm～780nm以上。An active matrix organic light emitting display according to claim 4, characterized in that the reflectivity of the metal film of the anode pixel electrode (2) is above 380nm-780nm.
  6. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于所述器件层包括顺次设置的空穴注入层(4)、空穴传输层(5)、发光层(6)、激子阻隔层(7)、电子传输层(8)、电子注入层(9)和阴极电极层(10)，空穴注入层(4)设置在阳极像素电极(2)上；阴极电极层(10)与薄膜密封层相连。The active matrix organic light emitting display according to claim 1, wherein the device layer comprises a hole injection layer (4), a hole transport layer (5), and a light emitting layer (6) arranged in sequence. , Exciton blocking layer (7), electron transport layer (8), electron injection layer (9) and cathode electrode layer (10). The hole injection layer (4) is arranged on the anode pixel electrode (2); the cathode electrode layer (10) Connect with the film sealing layer.
  7. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于所述薄膜密封层包括顺次高折射率层(11)、薄膜层(12)、有机聚合物密封层(13)，高折射率层(11)与器件层连接，有机聚合物密封层(13)与彩色光阻层(14)连接。The active matrix organic light emitting display according to claim 1, wherein the thin film sealing layer comprises a high refractive index layer (11), a thin film layer (12), and an organic polymer sealing layer (13) in sequence. , The high refractive index layer (11) is connected with the device layer, and the organic polymer sealing layer (13) is connected with the color photoresist layer (14).
  8. 根据权利要求7所述的一种有源矩阵式有机发光显示器，其特征在于高折射率层(11)由有机化合物层Alq3和无机化合物层MoO 3组成，厚度在30nm～100nm；薄膜层(12)为Al 2O 3或TiO 3，厚度在20nm～200nm；有机聚合物密封层(13)的厚度为300nm～800nm。 According to an active matrix organic light emitting display according to claim 7, characterized in that the high refractive index layer (11) of an organic compound and an inorganic compound layer, Alq3 layer consisting of MoO 3, the thickness of 30nm ~ 100nm; thin film layer (12 ) Is Al 2 O 3 or TiO 3 with a thickness of 20 nm to 200 nm; the organic polymer sealing layer (13) has a thickness of 300 nm to 800 nm.
  9. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于单个彩色滤光层的面积为(3μm～5μm)×(9μm～15μm)之间，与阳极像素电极(2)的像素面积一致，厚度为0.5μm～1.5μm；黑矩阵的面积为(0.3μm～1.5μm)×(9μm～15μm)，与像素间隔一致，厚度0.5μm～1.5μm。An active matrix organic light-emitting display according to claim 1, wherein the area of a single color filter layer is (3μm～5μm)×(9μm～15μm), and the area of the anode pixel electrode (2) is between (3μm～5μm)×(9μm～15μm). The pixel area is the same, and the thickness is 0.5μm～1.5μm; the area of the black matrix is (0.3μm～1.5μm)×(9μm～15μm), which is consistent with the pixel interval, and the thickness is 0.5μm～1.5μm.
  10. 根据权利要求1所述的一种有源矩阵式有机发光显示器，其特征在于彩色光阻层(14)与薄膜密封层由粘接胶贴合，胶的宽度0.5mm～1.5mm，胶的厚度0.2μm～1.8μm。The active matrix organic light emitting display according to claim 1, characterized in that the color photoresist layer (14) and the film sealing layer are bonded by adhesive glue, the width of the glue is 0.5mm～1.5mm, and the thickness of the glue 0.2μm～1.8μm.
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