CN110828522A - Full-color AMOLED display device and production method thereof - Google Patents
Full-color AMOLED display device and production method thereof Download PDFInfo
- Publication number
- CN110828522A CN110828522A CN201911132439.9A CN201911132439A CN110828522A CN 110828522 A CN110828522 A CN 110828522A CN 201911132439 A CN201911132439 A CN 201911132439A CN 110828522 A CN110828522 A CN 110828522A
- Authority
- CN
- China
- Prior art keywords
- layer
- emitting device
- light
- light emitting
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 78
- 229920001621 AMOLED Polymers 0.000 title claims description 90
- 230000004888 barrier function Effects 0.000 claims abstract description 112
- 238000013461 design Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 385
- 238000000034 method Methods 0.000 description 24
- 230000005525 hole transport Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000003086 colorant Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Abstract
The application discloses full-color AMOLED display device of high resolution and production method thereof, full-color AMOLED display device includes: the LED display device comprises a driving back plate, a light-emitting device, a packaging layer and a filter layer, wherein the light-emitting device comprises an anode layer, a pixel defining layer and a light-emitting device layer, the light-emitting device layer comprises a plurality of thin film layers of organic light-emitting devices, and the organic light-emitting devices are blue light-emitting devices or yellow light-emitting devices; the encapsulation layer comprises different barrier layers; the filter layer includes a plurality of filter layers corresponding to the plurality of organic light emitting devices one-to-one, and the filter layer is one of a red filter layer, a green filter layer, and a transparent filter layer. The application provides a pixel design and a light-emitting device graphical structure of a full-color AMOLED display device on an active array driving backboard by matching two-color organic light-emitting devices with corresponding filter layers so as to manufacture a high-resolution organic light-emitting diode display (AMOLED).
Description
Technical Field
The application relates to the technical field of display, in particular to a full-color AMOLED display device and a production method thereof.
Background
Amoled (active Matrix Organic Light Emitting Diode display) is a display made of Organic Light Emitting Diode devices made of stacked Organic semiconductor materials. Compared with the liquid crystal display, the liquid crystal display has the advantages of light weight, wide viewing angle, fast response time, low temperature resistance, high luminous efficiency and the like, and is considered as a next generation novel display technology. At present, the organic light emitting diode can be integrated with different Thin Film Transistor (TFT) driving substrates to be manufactured into display products applied to high-end smart phones, televisions and the like. In a miniature display device in the intelligent wearable device, the organic light emitting diode can also be integrated on a silicon-based CMOS driving substrate, and is manufactured into an ultrahigh-resolution chip display by a semiconductor process. This is a great advantage peculiar to the miniaturization of the organic light emitting diode, and in order to realize the advantage of the organic light emitting diode in the aspect of micro display, it is required to improve the display resolution of the organic light emitting diode to more than 2000 ppi.
In the related art, in the fabrication of an organic light emitting diode display (AMOLED), since an organic semiconductor material is sensitive to water and oxygen and is easily damaged by the reaction of water vapor and oxygen, a conventional patterning process of a device uses a vacuum thermal evaporation method to deposit a small molecular organic substance onto a substrate through openings of a metal mask. In the vapor deposition coating process, a Metal Mask or a micro-opening of a high-precision Metal Mask (FMM) is used to define a coating region. The thickness of the high-precision metal mask is generally only 20-50um, a plurality of micro-openings which are well arranged are designed according to the positions of sub-pixel points on the mask, and the size of each micro-opening is determined according to the resolution of the display. The resolution of an AMOLED screen for general intelligent display is about 300-600 ppi, and the size of a sub-pixel is about tens of microns. The accuracy and quality of the mask plate have a great influence on the performance of the OLED element device. The manufacturing precision of the currently used high-precision Metal Mask (FMM) has a size limitation, and is not easy to break through the resolution of more than 600ppi (pixel per inch). In addition, the ratio of the light emitting area (also called the aperture ratio) of the display is very low, and the current density needs to be increased to achieve the required high brightness, which causes the problem of short lifetime. The FMM mask plate used for higher resolution ratio has higher manufacturing cost and smaller micro-opening, so that the period of cleaning is shorter when the FMM mask plate is used for vapor deposition, and the FMM mask plate is difficult to clean, easy to damage, high in elimination rate and extremely high in manufacturing cost. Especially, in the manufacturing process of the mask plate, the metal mesh bars which are well composed and manufactured need to be stretched and fixed on the frame of the mask plate in a welding way. The metal net strips need to be stretched in the welding process to ensure that the surface is smooth; however, the stretching process of the metal mesh easily causes the deformation of the pixel points on the metal sheet, thereby causing great variation to the patterning manufacturing process of the AMOLED display screen, and greatly affecting the quality and performance of the manufactured display. And because the material thickness and the manufacturing process of the FMM are difficult to manufacture a high-precision metal mask plate higher than 1000ppi, the manufacturing process of the FMM is used for manufacturing an AMOLED display with red, green and blue sub-pixel parallel columns (RGB Side-By-Side) below 1000ppi, and is used for smart phone products. In the manufacturing of the ultra-high resolution AMOLED display beyond FMM, a full-surface White organic light emitting device formed by vertically stacking multiple light emitting units can be manufactured only by using a Clear Metal Mask (CMM, also called Open Mask) without micro-openings, and sub-pixels are defined by matching with White OLED with Color Filter (WOLED with CF) of three primary colors of red, green and blue manufactured according to the sub-pixel design.
The OLED is an organic light emitting diode, has the advantages of light weight, wide viewing angle, quick response time, low temperature resistance, high luminous efficiency and the like compared with a liquid crystal display, is considered as a next generation novel display technology, is an organic light emitting device based on silicon-based drive and has the resolution ratio of more than 2000ppi, is particularly suitable for being applied to helmet displays, three-dimensional display mirrors, eye type displays and the like, and has wide market prospect and military value.
The full-color AMOLED micro-display device is not particularly mature in process technology, high in cost and low in yield, large-scale mass production is not easy to carry out, particularly, the full-color scheme of the full-color AMOLED micro-display device mainly adopts the technology of adding RGB color filters on a white light OLED, the RGB color filters are manufactured on a protective cover plate, pixel positioning is achieved through a CCD, and the full-color AMOLED micro-display device is attached to the OLED device to achieve colorized display. The resolution ratio of OLED microdisplay spare is high, and the pixel only has the size of several microns, and CCDS bit precision also about 1um, so counterpoint the degree of difficulty height, when the precision is not enough, the problem of cross color has appeared easily, has restricted the promotion of device resolution ratio.
In the manufacturing process of the OLED micro-display device in the related technology, if the technology of firstly mechanically cutting and scribing and then adhering small pieces of glass is adopted, the process is complex, mechanical scribing is that mechanical force directly acts on the surface of a wafer, stress damage is easily generated in the wafer, the thermal influence range and residual stress are large, edge breakage and breakage are easy, the product yield is low, and large-scale production is not facilitated.
Content of application
The present application is directed to solving at least one of the problems in the prior art. Therefore, the application provides a pixel design and a structure of a full-color AMOLED display device, and the full-color AMOLED display device can be used for manufacturing display of a high-resolution organic light-emitting diode.
The application also provides a production method of the full-color AMOLED display device.
A full-color AMOLED display device according to an embodiment of a first aspect of the application includes: the LED display panel comprises a driving back plate, a light-emitting device and a filter layer, wherein the light-emitting device comprises an anode layer, a pixel definition layer and a light-emitting device layer, and the anode layer is arranged on the driving back plate; the light-emitting device layer is arranged on the anode layer and comprises a plurality of thin film layers of organic light-emitting devices, and the organic light-emitting devices are blue light-emitting devices or yellow light-emitting devices; the pixel definition layer is arranged on the driving backboard and separates the organic light-emitting devices to form sub-pixel areas; the filter layer is arranged on the light-emitting device and comprises a plurality of filter layers in one-to-one correspondence with the organic light-emitting devices, and the filter layer is one of a red filter layer, a green filter layer and a transparent filter layer.
According to some embodiments of the present invention, the red filter layer and the green filter layer are provided on the yellow light emitting device, and the transparent filter layer is provided on the blue light emitting device.
According to some embodiments of the invention, the light emitting device further comprises a first barrier layer and a second barrier layer, the first barrier layer is located between the light emitting device and the filter layer, the second barrier layer is located above the filter layer, and a protective cover plate is arranged on the second barrier layer.
According to some embodiments of the invention, the light emitting device further comprises a first barrier layer and a second barrier layer, the first barrier layer and the second barrier layer are located between the light emitting device and the filter layer, and the filter layer is provided with a protective cover plate.
According to some embodiments of the invention, the light emitting device further comprises a first barrier layer, a second barrier layer and a third barrier layer, the first barrier layer is located between the light emitting device and the filter layer, the second barrier layer is located above the filter layer, and the third barrier layer is located between the first barrier layer and the filter layer.
According to some embodiments of the invention, the first barrier layer comprises an inorganic barrier layer, a light emitting layer, an organic buffer layer.
According to some embodiments of the invention, the light emitting device further comprises a cathode electrode layer, an overcoat layer, a second buffer layer between the light emitting device layer and the filter layer.
The production method of the full-color AMOLED display device according to the embodiment of the second aspect of the invention comprises the following steps: 1) manufacturing a light emitting device on the driving back plate; 2) manufacturing a filter layer on the light-emitting device; 3) cutting to obtain a full-color AMOLED display device; wherein the fabricating the light emitting device includes: manufacturing a plurality of anodes on the driving backboard to form an anode layer, and manufacturing a pixel definition layer on the driving backboard; evaporating a light-emitting device layer in a sub-pixel region on an anode layer by adopting a Clear Metal Mask (CMM) and a precision Metal Mask (FMM), wherein each micropore on the precision Metal Mask corresponds to one or more sub-pixel regions; the color of the organic light-emitting devices of the partial adjacent sub-pixel areas is the same by using special sub-pixel design arrangement, so that a plurality of sub-pixel areas corresponding to the same light-emitting color can be simultaneously evaporated by using micropores on a precise metal mask plate. Due to the special sub-pixel arrangement design of the AMOLED display device, when the colors of the organic light emitting devices in part of adjacent sub-pixel regions are the same, the micro-holes in one precise metal mask plate can be used for simultaneously evaporating a plurality of sub-pixel regions which have the same light emitting color, so that a high-resolution full-color AMOLED is obtained, and the cost of a precise metal mask plate (FMM) can be reduced.
According to some embodiments of the present invention, the method further comprises manufacturing a barrier layer in step 1) and step 2), specifically: s11, manufacturing a first barrier layer on the light-emitting device; s12, manufacturing a filter layer on the first barrier layer; s13, manufacturing a second barrier layer on the filter layer; and S14, attaching a protective cover plate on the second barrier layer.
According to some embodiments of the present invention, the method further comprises manufacturing a barrier layer in step 1) and step 2), specifically: s21, manufacturing a first barrier layer on the light-emitting device; s22, manufacturing a third barrier layer on the first barrier layer; s23, manufacturing a filter layer on the third barrier layer; and S24, manufacturing a second barrier layer on the filter layer.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a simplified structural schematic diagram of a full-color AMOLED display device according to one embodiment of the present application;
FIG. 2 is a layered structure diagram of a full-color AMOLED display device according to one embodiment of the present application;
FIG. 3 is a simplified structural schematic diagram of a full-color AMOLED display device according to another embodiment of the present application;
FIG. 4 is a layered structure diagram of a full-color AMOLED display device according to another embodiment of the present application;
fig. 5 is a flow chart of a method of producing a full-color AMOLED display device according to an embodiment of the present application; fig. 5(a) shows a flowchart of an embodiment, and fig. 5(b) shows a flowchart of another embodiment for fabricating a thin AMOLED display device;
fig. 6 is a schematic structural diagram of an arrangement design of a filter layer of a single pixel of a full-color AMOLED display device and a light emitting device corresponding to the filter layer according to an embodiment of the present application, where fig. 6(a) shows the filter layer, and fig. 6(b) shows the light emitting device;
fig. 7 is a schematic structural diagram of an arrangement design of a filter layer of a single pixel of a full-color AMOLED display device and a light emitting device corresponding to the filter layer according to an embodiment of the present application, where fig. 7(a) shows the filter layer, and fig. 7(b) shows the light emitting device;
fig. 8 is a schematic structural diagram of an arrangement design of filter layers and corresponding light emitting devices of four pixels of a full-color AMOLED display device according to an embodiment of the present application, wherein fig. 8(a) shows the filter layers, and fig. 8(b) shows the light emitting devices;
fig. 9 is a schematic structural diagram of an arrangement design of filter layers of four pixels of a full-color AMOLED display device and corresponding light emitting devices according to another embodiment of the present application, where fig. 9(a) shows the filter layers, and fig. 9(b) shows the light emitting devices;
fig. 10 is a schematic structural diagram of an arrangement design of filter layers of four pixels of a full-color AMOLED display device and corresponding light emitting devices according to yet another embodiment of the present application, where fig. 10(a) shows the filter layers and fig. 10(b) shows the light emitting devices;
FIG. 11 is a detailed structural schematic diagram of a full-color AMOLED display device according to one embodiment of the present invention;
fig. 12 is a detailed structural schematic diagram of a thin full-color AMOLED display device according to another embodiment of the invention;
reference numerals:
10. a substrate; 11. a thin film transistor; 20. a planarization layer; 30. an anode layer; 40. a pixel defining layer; 51. a yellow light emitting device; 52. a blue light emitting device; 60. a cathode electrode layer; 70. a first barrier layer; 71. a second barrier layer; 72. a third barrier layer; 80. a filter layer; 81. a transparent filter layer; 82. a red filter layer; 83. a green filter layer; 90. a protective cover plate;
2. a first buffer layer; 3. a first insulating layer; 4. a conductive layer; 5. a second insulating layer; 6. a gate electrode;
501. a hole injection layer, 502, a hole transport layer;
502B, a blue hole transport layer; 502Y, yellow hole transport layer;
50B, a blue light-emitting layer; 50Y, yellow light-emitting layer;
503. an electron transport layer; 504. an electron injection layer; 15. a cover layer; 16. a second buffer layer; 17. and (3) optical cement.
Detailed Description
Embodiments of the present application will be described in detail below, which are exemplary and are described in detail below with reference to the accompanying drawings.
A full-color AMOLED (active matrix organic light emitting diode) display device and a method of fabricating the same according to an embodiment of the present application will be described with reference to fig. 1 to 10.
As shown in fig. 1 to 5, a full-color AMOLED display device according to an embodiment of the present application includes: a driving backplane (the driving backplane comprises a substrate 10), a light emitting device and a filter layer 80, wherein the light emitting device comprises an anode layer 30, a pixel definition layer 40 and a light emitting device layer, and the anode layer 30 is arranged on the substrate 10; a light emitting device layer disposed on the anode layer 30, the light emitting device layer including a plurality of thin film layers of organic light emitting devices (since the light emitting device layer includes a plurality of organic light emitting devices, each of which is composed of a plurality of thin film layers (such as but not limited to a hole injection layer, a hole transport layer, a blue or yellow light emitting layer, an electron transport layer, an electron injection layer)), the organic light emitting device being a blue or yellow light emitting device 52 or 51; the pixel defining layer 40 is provided on the substrate 10 and partitions each organic light emitting device, the filter layer 80 is provided on the light emitting device, the filter layer 80 includes a plurality of filter layers in one-to-one correspondence with the plurality of organic light emitting devices, and the filter layer 80 is one of a red filter layer 82, a green filter layer 83, and a transparent filter layer 81.
The full-color display is achieved by matching patterned yellow and blue organic light emitting devices with red, green and transparent filter layers, and in addition, the non-traditional red, green and blue organic light emitting devices are arranged in parallel. The patterning of the organic light emitting device is achieved by using a high precision metal mask (FMM shadow mask) for evaporation. The size of the sub-pixels (light emitting devices) is determined by the openings that the FMM is capable of making. The higher the resolution of the AMOLED display device, the smaller the sub-pixels and the smaller the required FMM aperture. When the FMM manufacturing limit is approached, the pixel design of the invention can achieve full-color display with higher resolution ratio for the same pixel size by using fewer light-emitting devices (yellow and blue) and matching with corresponding filter films. Thus, a display with higher resolution than that of a display using three RGB light emitting devices can be realized by using the same precision FMM. In addition, when sub-pixels with the same color of adjacent pixels are arranged together by a special arrangement design of the sub-pixels (including light emitting devices and corresponding filter films), a plurality of sub-pixel regions can be simultaneously evaporated through the micropores of the same precision metal mask (FMM). Thus, the AMOLED display device with higher resolution and higher light-emitting opening ratio can be manufactured; or FMM with larger micropores can be used, so that the cost of the FMM is reduced, and the quality of the manufactured AMOLED display device is improved.
According to the full-color AMOLED display device of the embodiment of the present application, three primary colors are formed using the blue light emitting device 52 and the yellow light emitting device 51 in the light emitting device layer in cooperation with the red filter layer 82, the green filter layer 83, and the transparent filter layer 81 in the filter layer 80. This structure can make a high pixel resolution full-color AMOLED display device easier than the conventional design with red, green and blue three-color organic light emitting devices.
The Driving Backplane is an Active Matrix Driving Backplane (Active Matrix Driving Backplane), and may be a low temperature polysilicon (LTPS TFT), an Oxide semiconductor (Oxide TFT) or a silicon-based CMOS (Si-based CMOS) of a glass or flexible substrate. The substrate 10 may comprise glass, high temperature Polyimide (PI), or silicon-based wafer (Siwafer). A plurality of thin film transistors 11 are laid on the substrate 10, the thin film transistors 11 are planarized by the planarization layer 20, a plurality of anodes are formed on the thin film transistors 11, each anode corresponds to each thin film transistor 11 one by one, and each sub-pixel region is spaced by the pixel defining layer 40 to form a sub-pixel region.
According to some embodiments of the present application, as shown in fig. 6, a red filter layer 82 and a green filter layer 83 are provided on the yellow light emitting device 51, and a transparent filter layer 81 is provided on the blue light emitting device 52.
According to some embodiments of the present disclosure, the light emitting device further includes a first barrier layer 70 and a second barrier layer 71, the first barrier layer 70 is located between the light emitting device and the filter layer 80, and the second barrier layer 71 is located on the filter layer 80. As shown in fig. 1 and 3, a first barrier layer 70 is disposed between the light emitting device and the filter layer 80, and a second barrier layer 71 is disposed on the filter layer 80. The first barrier layer 70 is disposed to protect the organic light emitting device, prevent the organic light emitting device from being damaged due to reaction of moisture and oxygen in the surrounding area, and further prevent the filter layer 80 from being damaged in the manufacturing process of the organic light emitting device. The first barrier layer 70 and the second barrier layer 71 can completely cover the filter layer 80, so as to form an effective thin film encapsulation structure, thereby improving the water and oxygen resistance and the lifetime of the AMOLED display device.
According to some embodiments of the present disclosure, as shown in fig. 1, a protective cover plate 90 is disposed on the second barrier layer 70, the internal structure of the full-color AMOLED display device may be protected by the protective cover plate 90, and the display effect of the full-color AMOLED display device may not be affected by the protective cover plate 90. Preferably, the material of the protective cover 90 may be glass, plastic or other transparent material with high mechanical strength.
According to other embodiments of the present disclosure, the light emitting device further includes a first barrier layer 70 and a second barrier layer 71, the first barrier layer 70 and the second barrier layer 71 are located between the light emitting device and the filter layer 80, and the filter layer 80 is provided with a protective cover 90 (this is another embodiment different from fig. 1 and fig. 3, that is, the light emitting device, the first barrier layer 70, the second barrier layer 71, the filter layer 80, and the protective cover 90 are sequentially arranged from bottom to top, and before the protective cover 90 is attached to the filter layer 80, an inorganic protective layer may be first fabricated, and then the optical adhesive and the protective cover 90 are attached thereto).
According to other embodiments of the present disclosure, as shown in fig. 3, the light emitting device further includes a first barrier layer 70, a second barrier layer 71, and a third barrier layer 72, wherein the first barrier layer 70 is located between the light emitting device and the filter layer 80, the second barrier layer 71 is located on the filter layer 80, and the third barrier layer 72 is located between the first barrier layer 70 and the filter layer 80. The material of third barrier layer 72 is one or more of silicon nitride, silicon oxide, or silicon oxynitride. The first barrier layer 70 and the third barrier layer 72 may be formed by different processes to optimize the moisture and oxygen barrier. The first barrier layer 70 and the third barrier layer 72 are disposed at the same time, so as to prevent defects existing in any one of the layers from affecting the overall packaging effect.
According to other embodiments of the present application, the first barrier layer 70 includes an inorganic barrier layer, a light emission layer (light emission layer), and an organic buffer layer. The inorganic barrier layer is a compact material layer with high coverage; the light-emitting layer is used for improving the light-emitting intensity of the OLED display device, is matched with the overall materials and optical design of the inorganic blocking layer and the organic buffer layer, and is selected and designed by proper materials, so that the light-emitting efficiency of the organic light-emitting device can be improved, and the efficiency of the overall device is improved; the organic buffer layer is made of metal oxide or fluoride materials, is thick and has the functions of uneven covering, granular pollutant covering, stress buffering and the like. The first blocking layer and the third blocking layer comprise the organic buffer layer to ensure the integral flatness and cover surface protrusions such as micro-particles, pollutants and the like, and can reduce the stress between the blocking film layers, improve the reliability and durability of the integral packaging structure, and improve the quality and the service life of the AMOLED display device.
According to some embodiments of the present application, the light emitting device further includes a cathode electrode layer 60, an overcoat layer 15, and a second buffer layer 16 between the light emitting device layer and the filter layer 80, as shown in fig. 11 and 12.
The present invention discloses a schematic structure of a part of light emitting devices and a filter layer, as shown in fig. 6-10, but not limited to the illustrated examples, and all the combinations of patterned yellow and blue organic light emitting devices with red, green and transparent filter layers are within the scope of the present invention. By adjusting the positions or the arrangement combinations of the red filter layer 82, the green filter layer 83 and the transparent filter layer 81, and the corresponding positions or the arrangement combinations of the blue light emitting device 52 and the yellow light emitting device 51, different types of high-resolution full-color AMOLED display devices can be provided, and the arrangement and the optical efficacy of the sub-pixels can be different accordingly.
Fig. 6 is a schematic structural diagram of a filter layer and a light emitting device of a full-color AMOLED display device according to an embodiment of the present disclosure. Fig. 6(a) is an arrangement diagram of filter layers, which includes a red filter layer 82, a green filter layer 83, and a transparent filter layer 81, wherein the red filter layer 82 and the green filter layer 83 are arranged in parallel with the transparent filter layer 81. Fig. 6(b) is an arrangement diagram of light emitting devices corresponding to fig. 6(a), including a yellow light emitting device 51 and a blue light emitting device 52 arranged in parallel, wherein a red filter layer 82 and a green filter layer 83 are correspondingly disposed on the yellow light emitting device 51, and a transparent filter layer 81 is correspondingly disposed on the blue light emitting device 52.
As shown in fig. 7, a single pixel structure of another embodiment of the present application is schematically illustrated. Fig. 7(a) shows an arrangement of the upper filter layers, which is obtained by changing and combining the shapes and positions of the patterns of the 3 filter layers in fig. 6(a), and includes a red filter layer 82 and a green filter layer 83 located at the periphery and a transparent filter layer 81 located in the middle, thereby forming 1 pixel. Fig. 7(b) shows an arrangement of the light emitting devices of the lower layer corresponding to the filter film of the upper layer, and similarly, the red filter layer 82 and the green filter layer 83 are correspondingly disposed on the yellow light emitting device 51, and the transparent filter layer 81 is correspondingly disposed on the blue light emitting device 52, so that the yellow light emitting device 51 is circumferentially arranged around the blue light emitting device 52.
As shown in fig. 8, a schematic diagram of a four-pixel structure according to another embodiment of the present application, where fig. 8(a) is an arrangement of an upper light filtering layer, which is obtained by splicing 4 single pixels in fig. 7(a), and fig. 8(b) is an arrangement of a lower light emitting device, and similarly, a red filtering layer 82 and a green filtering layer 83 are correspondingly disposed on a yellow light emitting device 51, and a transparent filtering layer 81 is correspondingly disposed on a blue light emitting device 52.
As shown in fig. 9, a schematic diagram of a four-pixel structure according to another embodiment of the present application is shown. Fig. 9(a) is an arrangement of upper filter layers, and is formed by splicing 4 filter layers shown in fig. 6(a), where two filter layers in a right column are arranged in the same manner as in fig. 6(a), and a left column and a right column are symmetrically arranged. Fig. 9(b) shows an arrangement of the lower light emitting devices, and similarly, the red filter layer 82 and the green filter layer 83 are correspondingly disposed on the yellow light emitting devices 51, and the transparent filter layer 81 is correspondingly disposed on the blue light emitting devices 52, so that two rows of blue light emitting devices 52 are formed in the middle, and one row of yellow light emitting devices 51 is formed on both sides. Through the adjacent setting of the luminescent device with the same colour, can adopt the accurate metal mask board (FMM) of great micropore to carry out the coating by vaporization, reduce the degree of difficulty of coating by vaporization. Or the light emitting devices with the same color in a plurality of sub-pixel areas can be simultaneously evaporated by using the minimum micro-hole of the FMM with the highest precision to manufacture the full-color AMOLED display device with higher resolution.
Fig. 10 is a schematic diagram of a four-pixel structure according to another embodiment of the present application, which is also transformed according to fig. 6. Fig. 10(a) shows an arrangement of the upper filter layers, which includes 4 filter layers obtained by changing the arrangement position in fig. 6(a), where the filter layers at the upper right corner and the lower left corner are the same as those in fig. 6(a), and the filter layers at the upper left corner and the lower right corner are symmetrical to 6 (a). Fig. 10(b) shows an arrangement of the lower light emitting devices, and similarly, the red filter layer 82 and the green filter layer 83 are correspondingly disposed on the yellow light emitting devices 51, and the transparent filter layer 81 is correspondingly disposed on the blue light emitting devices 52, so as to form two rows of yellow light emitting devices 51 in the middle of the upper row and one row of blue light emitting devices 52 on both sides; two columns of blue light emitting devices 52 in the middle of the lower row and one column of yellow light emitting devices 51 on both sides. Through the adjacent setting of the luminescent device with the same colour, can adopt the accurate metal mask board (FMM) of great micropore to carry out the coating by vaporization, reduce the degree of difficulty of coating by vaporization. Or the light emitting devices with the same color in a plurality of sub-pixel areas can be simultaneously evaporated by using the minimum micropore of the FMM with the highest precision to manufacture the full-color AMOLED display device with high resolution.
The production method of the full-color AMOLED display device according to the embodiment of the second aspect of the application comprises the following steps: 1) manufacturing a light emitting device on the driving backboard; 2) manufacturing a filter layer on the light-emitting device; 3) and cutting to obtain the full-color AMOLED display device. The manufacturing method of the light-emitting device in the step 1) comprises the following specific steps: manufacturing a plurality of anodes on the driving backboard to form an anode layer 30, and manufacturing a pixel definition layer 40 on the driving backboard; evaporating a light emitting device layer in a sub-pixel region on the anode layer 30 by using a Clear Metal Mask (CMM) or an Open Mask and a precision Metal Mask (FMM), wherein each micropore on the precision Metal Mask corresponds to one or more sub-pixel regions; the color of the organic light-emitting devices of the partial adjacent sub-pixel areas is the same by using special sub-pixel design arrangement, so that a plurality of sub-pixel areas corresponding to the same light-emitting color can be simultaneously evaporated by using micropores on a precise metal mask plate. Due to the special sub-pixel arrangement design of the AMOLED display device, when the colors of the organic light emitting devices in part of adjacent sub-pixel regions are the same, the micro-holes in one precise metal mask plate can be used for simultaneously evaporating a plurality of sub-pixel regions which have the same light emitting color, so that a high-resolution full-color AMOLED is obtained, and the cost of a precise metal mask plate (FMM) can be reduced.
According to some embodiments of the present invention, as shown in fig. 5(a), the method further includes the steps of fabricating the barrier layer in step 1) and step 2), specifically as follows: s2, forming a first barrier layer 70 on the light emitting device; s3, forming a filter layer 80 on the first barrier layer 70; s4, forming a second barrier layer 71 on the filter layer 80; s5, attaching a protective cover sheet 90 to the second barrier layer 71.
According to some embodiments of the present invention, as shown in fig. 5(b), the method further includes the steps of fabricating the barrier layer in step 1) and step 2), specifically as follows: s2, manufacturing a first barrier 70 layer on the light-emitting device; s3, manufacturing a third barrier layer 72 on the first barrier layer 70; s4, then fabricating the filter layer 80 on the third barrier layer 72; s5, a second barrier layer 71 is formed on the filter layer 80.
One or more sub-pixel regions are corresponding to each micropore on the precision metal mask plate. Due to the special sub-pixel arrangement design of the AMOLED display device, the colors of the organic light emitting devices in partial adjacent sub-pixel regions are the same, and the micro-holes in one precise metal mask plate can be used for simultaneously evaporating a plurality of sub-pixel regions which should have the same light emitting color, so that the high-resolution full-color AMOLED is obtained. The precision requirement on a precise metal mask plate in the processing process of the organic light-emitting device can be reduced, the cost of the precise metal mask plate (FMM) can be reduced, the difficulty of a production process for manufacturing a high-resolution full-color AMOLED display device can be further reduced, and a higher-resolution full-color AMOLED can be manufactured.
A method of producing a full-color AMOLED display device according to some embodiments of the present application is described below with reference to fig. 1, 2, and 5 (a).
The full-color AMOLED display device of the present application has a main structure as shown in fig. 1 and 2, and includes: a driving backplane, and a thin film transistor 11, a planarization layer 20, an anode layer 30 composed of a plurality of anodes, a pixel defining layer 40, a light emitting device layer, a cathode electrode layer 60, a first barrier layer 70, a filter layer 80, a second barrier layer 71, and a protective cover 90 sequentially formed on a substrate 10.
The detailed process is as follows:
firstly, an active array driving device such as a thin film transistor 11 is fabricated on a substrate 10, and planarization is performed on the thin film transistor 11 by using a planarization layer 20 so as to fabricate an organic light emitting device thereon; fabricating an anode layer 30 on the planarization layer 20; a pixel definition layer 40 is fabricated thereon to space the individual sub-pixel regions apart to define the area of the individual sub-pixels. The substrate 10 is provided with an active array driving device and a driving circuit, and the driving circuit is used for controlling the conduction of the thin film transistor 11 to charge and drive the corresponding organic light emitting device to emit light of the sub-pixel.
Next, on the produced pixel defining layer 40, vapor deposition was performed using a transparent metal mask (CMM) and a precision metal mask (FMM) to produce a light emitting device layer. A light emitting device layer, as shown in (b) of fig. 6, the light emitting device layer comprising: a blue light emitting device 52 and a yellow light emitting device 51.
The blue light emitting device 52 includes, but is not limited to: the hole injection layer 501, the hole transport layer 502, the blue light-emitting layer 50B, the electron transport layer 503 and the electron injection layer 504 are manufactured as follows: the cathode electrode layer 60 is produced by first evaporating a hole injection layer 501 on the anode layer 30, then evaporating a hole transport layer 502 on the hole injection layer 501, then evaporating a blue hole transport layer 502B on the hole transport layer 502, and evaporating a blue light emitting layer 50B on the blue hole transport layer 502B, then evaporating an electron transport layer 503 on the blue light emitting layer 50B, and evaporating an electron injection layer 504 on the electron transport layer 503, and then on the electron injection layer 504.
Yellow light emitting device 51 includes, but is not limited to: the hole injection layer 501, the hole transport layer 502, the yellow hole transport layer 502Y, the yellow light-emitting layer 50Y, the electron transport layer 503 and the electron injection layer 504 are manufactured as follows: the cathode electrode layer 60 is produced by first vapor-depositing a hole injection layer 501 on the anode layer 30, then vapor-depositing a hole transport layer 502 on the hole injection layer 501, then vapor-depositing a yellow hole transport layer 502Y on the hole transport layer 502, and vapor-depositing a yellow light-emitting layer 50Y on the yellow hole transport layer 502Y, then vapor-depositing an electron transport layer 503 on the yellow light-emitting layer 50Y, vapor-depositing an electron injection layer 504 on the electron transport layer 503, and then on the electron injection layer 504.
The film layers in the blue light emitting device 52 and the yellow light emitting device 51 may be formed by vapor deposition together with a common film layer shared by the two light emitting devices, except for the blue transport layer 502B, the blue light emitting layer 50B, the yellow hole transport layer 502Y, and the yellow light emitting layer 50Y.
The filter layer 80 is then formed on the light emitting device by exposure and development. In which, before fabricating the filter layer 80, a first barrier layer 70 is fabricated on the cathode electrode layer 60. Next, a second barrier layer 71 is formed on the filter layer 80, and then a protective cover 90 is attached to the second barrier layer 71.
And finally, cutting to obtain the designed full-color AMOLED display device. The method can improve the production efficiency, prevent damages such as damage, edge breakage, breakage and the like caused in the cutting process of the driving back plate, is favorable for improving the yield of products, and is suitable for realizing large-scale mass production. The distance between the light-emitting layer and the filter film can be shortened by combining the filter layer and the packaged barrier film on the light-emitting device, and the problems of light leakage and color mixing which are easily caused by large distance are reduced; especially in high resolution AMOLED displays.
It should be noted that the above manufacturing method may further include manufacturing a capping layer and a second buffer layer between the cathode electrode layer 60 and the first barrier layer 70 to protect the organic light emitting device from being damaged by the subsequent processes, and simultaneously, the light emitting efficiency of the organic light emitting device may be improved.
Methods of producing full-color AMOLED display devices according to further embodiments of the present application are described below with reference to fig. 3, 4, and 5 (b).
The difference from fig. 1, 2, and 5(a) is that after the first barrier layer 70 is formed on the cathode electrode layer 60, the third barrier layer 72 is formed on the first barrier layer 70, and then the filter layer 80 is formed on the third barrier layer 72. Next, a second barrier layer 71 is formed on the filter layer 80. And finally, cutting to obtain the designed full-color AMOLED display device. The distance between the light-emitting layer and the filter film can be shortened by combining the filter layer and the packaged barrier film on the light-emitting device, and the problems of light leakage and color mixing which are easily caused by large distance are reduced; especially in high resolution AMOLED displays. Meanwhile, the method can be used for manufacturing the AMOLED display device which is high in reliability, thin and high in resolution and does not use a protective cover plate.
It should be noted that the above-mentioned preparation method further includes fabricating a capping layer and a second buffer layer between the cathode electrode layer 60 and the first barrier layer 70 to protect the organic light emitting device from being damaged by the subsequent processes, and simultaneously, the light emitting efficiency of the organic light emitting device can be improved.
According to the full-color AMOLED display device obtained by the production method, compared with the traditional production method using a metal mask plate, the use amount of the metal mask plate is reduced, and the three primary colors are formed by using two color sub-pixels through a color film layer, so that the pixel resolution is improved, and the resolution ratio of the full-color AMOLED display device is favorably improved. If the special sub-pixel arrangement design of the invention is used, the color of the organic light-emitting devices in partial adjacent sub-pixel areas is the same, the micro-holes on a precise metal mask plate can be used for simultaneously evaporating a plurality of sub-pixel areas corresponding to the same light-emitting color; if the minimum micropore of the FMM with the highest precision is used for simultaneously evaporating the light-emitting devices with the same color in a plurality of sub-pixel regions, a full-color AMOLED display device with higher resolution, larger light-emitting opening rate and higher light-emitting efficiency can be manufactured. Or the precision requirement on the precise metal mask plate in the processing process of the organic light-emitting device can be reduced, the precise metal mask plate (FMM) with larger micropores is adopted for evaporation, the difficulty of evaporation is reduced, the cost of the precise metal mask plate (FMM) can be reduced, and the yield of manufacturing is increased.
Fig. 11 and 12 are schematic diagrams showing detailed structures of a full-color AMOLED display device according to an embodiment of the present invention (fig. 1 and 3 are a part of fig. 11 and 12, and the final structure is based on fig. 11 and 12), including detailed structures of a driving backplane, a light emitting device, a barrier layer plus a filter layer, a protective cover plate, and the like.
Wherein, the drive backplate includes: a substrate 10, thin film transistors (numbers 2 to 6 in fig. 11), and a planarization layer 20. The first buffer layer 2 may be formed on the substrate 10, and a plurality of Thin Film Transistors (TFTs) may be formed thereon. The Thin Film Transistor (TFT) comprises a first insulating layer 3, a second insulating layer 5, a gate electrode 6 and a conducting layer 4. The current on/off of the conducting layer 4 is controlled by the gate 6 to charge the anode layer 30 and drive the corresponding organic light emitting device above it. A planarization layer 20 is disposed between the thin film transistor and the anode to form a planarized assembly layer to facilitate fabrication of the various layers of the organic light emitting device thereabove.
Wherein, the light emitting device includes: an anode layer 30, a pixel defining layer 40, a hole injection layer 501, a hole transport layer 502, a blue hole transport layer 502B or yellow hole transport layer 502Y, a blue light emitting layer 50B or yellow light emitting layer 50Y, an electron transport layer 503, an electron injection layer 504, a cathode electrode layer 60, a capping layer 15, and a second buffer layer 16.
In fig. 11, an optical adhesive 17 is further included between the protective cover plate 90 and the second blocking layer 71, and the optical adhesive 17 plays a role in adhering and fixing the protective cover plate 90, so that the reliability of the protective cover plate 90 can be ensured.
Compared with the traditional structure that red, green and blue three-primary-color organic light emitting devices are used and arranged in a row mode, the full-color AMOLED display device obtained by the production method reduces the using amount, manufacturing difficulty and cost of a precision metal mask (FMM), and uses two colors of light emitting devices to match with corresponding color film layers to form three primary colors, so that the pixel resolution is improved, and the full-color AMOLED display device with higher resolution ratio can be manufactured. If the special sub-pixel arrangement design of the invention is used, the color of the organic light-emitting devices in partial adjacent sub-pixel areas is the same, the micro-holes on a precise metal mask plate can be used for simultaneously evaporating a plurality of sub-pixel areas corresponding to the same light-emitting color; if the minimum micropore of the FMM with the highest precision is used for simultaneously evaporating the light-emitting devices with the same color in a plurality of sub-pixel areas, a full-color AMOLED display device with higher resolution, larger light-emitting opening ratio and higher light-emitting efficiency can be manufactured. Or the precision requirement on the precise metal mask plate in the processing process of the organic light-emitting device can be reduced, the precise metal mask plate (FMM) with larger micropores is adopted for evaporation, the difficulty of evaporation is reduced, and the cost and the manufacturing yield of the precise metal mask plate (FMM) can be reduced. In addition, in the AMOLED display structure, the filter layer and the packaged barrier film are combined and manufactured on the light-emitting device, so that the distance between the light-emitting layer and the filter film can be shortened, and the problem of light leakage and color mixing which are easily caused by large distance can be reduced; especially in high resolution AMOLED displays. Meanwhile, with the manufacturing method of the present invention, as shown in fig. 12, a thin high-resolution full-color AMOLED display device with high reliability can be manufactured without using a protective cover plate.
The organic light emitting device and the active array driven organic light emitting diode display (AMOLED) manufactured by the method can be used for production of wearable equipment, such as ultra-high resolution micro-displays, electronic skins and vehicle-mounted displays and other equipment in VR, MR and AR intelligent glasses, and can be used for product applications such as mobile phones, intelligent mobile phones, electronic books, electronic newspapers, televisions, personal portable computers, foldable and rollable flexible OLEDs and other high-resolution high-end AMOLED displays.
In the description of the present invention, it is to be understood that the terms "central", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present invention.
In the description of the present invention, "the first feature" and "the second feature" may include one or more of the features.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A full-color AMOLED display device, comprising:
driving the back plate;
the light-emitting device comprises an anode layer, a pixel definition layer and a light-emitting device layer, wherein the anode layer is arranged on the driving backboard; the light-emitting device layer is arranged on the anode layer and comprises a plurality of thin film layers of organic light-emitting devices, and the organic light-emitting devices are blue light-emitting devices or yellow light-emitting devices; the pixel definition layer is arranged on the driving backboard and separates the organic light-emitting devices to form the area of each sub-pixel;
the filter layer is arranged on the light-emitting device and comprises a plurality of filter layers in one-to-one correspondence with the organic light-emitting devices, and the filter layer is one of a red filter layer, a green filter layer and a transparent filter layer.
2. The full-color AMOLED display device of claim 1, wherein the red and green filter layers are correspondingly disposed on the yellow light emitting device and the transparent filter layer is correspondingly disposed on the blue light emitting device.
3. The full-color AMOLED display device of claim 2, further comprising a first barrier layer between the light emitting device and the filter layer and a second barrier layer over the filter layer, the second barrier layer having a protective cover sheet disposed thereon.
4. The full-color AMOLED display device of claim 2, further comprising a first barrier layer and a second barrier layer between the light emitting device and the filter layer, the filter layer having a protective cover plate disposed thereon.
5. The full-color AMOLED display device of claim 2, further comprising a first barrier layer between the light emitting device and the filter layer, a second barrier layer over the filter layer, and a third barrier layer between the first barrier layer and the filter layer.
6. The full-color AMOLED display device as claimed in any one of claims 3-5, wherein the first blocking layer comprises an inorganic blocking layer, a light emitting layer, an organic buffer layer.
7. The full-color AMOLED display device of claim 6, wherein the light emitting device further comprises a cathode electrode layer, an overcoat layer, a second buffer layer between the light emitting device layer and the filter layer.
8. A method for producing a full-color AMOLED display device according to any one of claims 1-7, comprising the steps of:
1) manufacturing a light emitting device on the driving back plate;
2) manufacturing a filter layer on the light-emitting device;
3) cutting to obtain a full-color AMOLED display device;
wherein the fabricating the light emitting device includes: manufacturing a plurality of anodes on the driving backboard to form an anode layer, and manufacturing a pixel definition layer on the driving backboard; evaporating a light-emitting device layer in a sub-pixel region on an anode layer by using a hollow metal mask (CMM) and a precision metal mask (FMM), wherein each micropore on the precision metal mask corresponds to one or more sub-pixel regions; the color of the organic light-emitting devices in the sub-pixel regions which are partially adjacent is the same by using special sub-pixel design arrangement, so that the micro-holes on one precise metal mask plate can be used for simultaneously evaporating a plurality of corresponding sub-pixel regions with the same light-emitting color to manufacture the AMOLED display device with high resolution.
9. The method for producing a full-color AMOLED display device according to claim 8, further comprising fabricating a barrier layer in steps 1) and 2), specifically:
s11, manufacturing a first barrier layer on the light-emitting device;
s12, manufacturing a filter layer on the first barrier layer;
s13, manufacturing a second barrier layer on the filter layer;
and S14, attaching a protective cover plate on the second barrier layer.
10. The method for producing a full-color AMOLED display device according to claim 8, further comprising fabricating a barrier layer in steps 1) and 2), specifically:
s21, manufacturing a first barrier layer on the light-emitting device;
s22, manufacturing a third barrier layer on the first barrier layer;
s23, manufacturing a filter layer on the third barrier layer;
and S24, manufacturing a second barrier layer on the filter layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862768984P | 2018-11-19 | 2018-11-19 | |
| US62/768,984 | 2018-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110828522A true CN110828522A (en) | 2020-02-21 |
Family
ID=69556543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911132439.9A Pending CN110828522A (en) | 2018-11-19 | 2019-11-18 | Full-color AMOLED display device and production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110828522A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3726583A4 (en) * | 2017-12-15 | 2022-01-26 | Eur Ho Joe | Display device having pyramid subpixel array structure |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070114519A1 (en) * | 2005-11-22 | 2007-05-24 | Seiko Epson Corporation | Light-emitting device and electronic apparatus |
| CN102244202A (en) * | 2004-05-20 | 2011-11-16 | 株式会社半导体能源研究所 | Light-emitting element and display device |
| CN204067442U (en) * | 2014-07-09 | 2014-12-31 | 京东方科技集团股份有限公司 | A kind of OLED display device and evaporation mask plate |
| CN105428390A (en) * | 2015-12-28 | 2016-03-23 | 昆山国显光电有限公司 | Oled display structure and pixel structure thereof |
| US20170018737A1 (en) * | 2015-07-17 | 2017-01-19 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
| CN106876424A (en) * | 2015-12-14 | 2017-06-20 | 上海和辉光电有限公司 | A kind of OLED and preparation method thereof |
| CN106887530A (en) * | 2017-01-20 | 2017-06-23 | 中国电子科技集团公司第五十五研究所 | The thin-film packing structure and preparation method of a kind of organic electroluminescence device |
| CN108063154A (en) * | 2017-12-14 | 2018-05-22 | 安徽熙泰智能科技有限公司 | Silicon substrate color OLED micro-display device and preparation method thereof |
| CN207925471U (en) * | 2018-04-04 | 2018-09-28 | 信利（惠州）智能显示有限公司 | A kind of AMOLED luminous layer structures and display panel |
| CN108630732A (en) * | 2018-04-25 | 2018-10-09 | 深圳市华星光电技术有限公司 | OLED display panel and preparation method thereof |
-
2019
- 2019-11-18 CN CN201911132439.9A patent/CN110828522A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244202A (en) * | 2004-05-20 | 2011-11-16 | 株式会社半导体能源研究所 | Light-emitting element and display device |
| US20070114519A1 (en) * | 2005-11-22 | 2007-05-24 | Seiko Epson Corporation | Light-emitting device and electronic apparatus |
| CN204067442U (en) * | 2014-07-09 | 2014-12-31 | 京东方科技集团股份有限公司 | A kind of OLED display device and evaporation mask plate |
| US20170018737A1 (en) * | 2015-07-17 | 2017-01-19 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
| CN106876424A (en) * | 2015-12-14 | 2017-06-20 | 上海和辉光电有限公司 | A kind of OLED and preparation method thereof |
| CN105428390A (en) * | 2015-12-28 | 2016-03-23 | 昆山国显光电有限公司 | Oled display structure and pixel structure thereof |
| CN106887530A (en) * | 2017-01-20 | 2017-06-23 | 中国电子科技集团公司第五十五研究所 | The thin-film packing structure and preparation method of a kind of organic electroluminescence device |
| CN108063154A (en) * | 2017-12-14 | 2018-05-22 | 安徽熙泰智能科技有限公司 | Silicon substrate color OLED micro-display device and preparation method thereof |
| CN207925471U (en) * | 2018-04-04 | 2018-09-28 | 信利（惠州）智能显示有限公司 | A kind of AMOLED luminous layer structures and display panel |
| CN108630732A (en) * | 2018-04-25 | 2018-10-09 | 深圳市华星光电技术有限公司 | OLED display panel and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3726583A4 (en) * | 2017-12-15 | 2022-01-26 | Eur Ho Joe | Display device having pyramid subpixel array structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111682120B (en) | Display panel, preparation method thereof and display device | |
| US10263185B2 (en) | Method of manufacturing OLED display device, mask, and method of designing mask | |
| CN105514140B (en) | Pixel array, electro-optical device, electrical apparatus, and pixel rendering method | |
| CN109728035B (en) | OLED display device, mask and manufacturing method of OLED display device | |
| KR101193186B1 (en) | Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method | |
| WO2016065770A1 (en) | Organic light emitting diode display device, driving method and display apparatus thereof | |
| US20150379924A1 (en) | Pixel array, metal mask, electro optical device and electric apparatus | |
| US20160359112A1 (en) | Display substrate, its manufacturing method and display device | |
| CN105118846B (en) | Printed light emitting diode display device and manufacturing method thereof | |
| CN105576000A (en) | Organic light-emitting display apparatus | |
| US11594579B2 (en) | Display substrates, display devices and methods of forming display substrates and devices | |
| WO2016074372A1 (en) | Amoled display panel, manufacturing method thereof and display device | |
| CN110581160B (en) | Display substrate, preparation method thereof and display device | |
| US20160358983A1 (en) | Organic light emitting diode (oled) array substrate and fabricating method thereof, display device | |
| WO2017012316A1 (en) | Display substrate and preparation method thereof and display device | |
| WO2019041958A1 (en) | Pixel structure and oled display panel | |
| KR20090087274A (en) | Organic light emitting diode display and method for manufacturing the same | |
| CN113611730B (en) | Silicon-based micro-display and preparation method thereof | |
| CN110828522A (en) | Full-color AMOLED display device and production method thereof | |
| CN113314682A (en) | Display panel, preparation method thereof and electronic equipment | |
| CN103943650A (en) | Organic light-emitting display device and mask plate thereof | |
| CN115132815A (en) | Display substrate and display device | |
| KR100497094B1 (en) | Hybrid Structure Organic Electro-luminescent Device and method for fabricating the same | |
| WO2021223298A1 (en) | Oled pixel arrangement structure, oled display panel, and manufacturing method for display panel | |
| CN113013207B (en) | Display substrate, preparation method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210617 Address after: 315174 Xinlian village, Gaoqiao Town, Haishu District, Ningbo City, Zhejiang Province Applicant after: Huancaixing Technology (Ningbo) Co.,Ltd. Address before: 2901, building 5-1, optical valley new world, 349 Guanshan Avenue, Hongshan District, Wuhan City, Hubei Province, 430206 Applicant before: Wuhan MeiXun Semiconductor Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200221 |
|
| RJ01 | Rejection of invention patent application after publication |