CN113611730B - Silicon-based micro-display and preparation method thereof - Google Patents
Silicon-based micro-display and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
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- 238000005538 encapsulation Methods 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 abstract description 20
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- 229920001621 AMOLED Polymers 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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Abstract
The invention discloses a silicon-based micro display and a preparation method thereof, wherein the preparation method comprises the following steps: providing a driving backboard; sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard; at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed in a multiple dislocation evaporation mode and has the thickness not identical; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer. By adopting a mode of multiple dislocation evaporation under the action of the mask, the microcavity adjusting layer with the thickness not identical is formed, so that microcavity thickness inconsistency corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized. When the sub-pixel points corresponding to RGB emit light, the peak positions corresponding to RGB respectively with the maximum white light spectrum peak values are ensured, and finally, the brightness improvement of the silicon-based micro-display is realized, and the problem of difficult brightness improvement is solved.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a silicon-based micro-display and a preparation method thereof.
Background
With the vigorous development of the domestic panel industry and the daily and monthly variation of semiconductor technology, the silicon-based micro-display technology based on the panel combined with the semiconductor technology is also rapidly developed.
At present, a silicon-based micro-display is limited by the limitation of mask manufacturing precision and opening size, and colorization is realized by mainly adopting a white light emitting layer combined with a color filter structure, however, the brightness loss of the display is larger after light emitted by the white light emitting layer passes through the color filter, so that the brightness of a silicon-based micro-display product is reduced; in addition, since the light of three colors of red, green and blue corresponds to optical microcavities with different thicknesses, the white organic electroluminescent device (White organic light-emitting device, WOLED) with a single optical thickness of the top emission structure cannot maximize the intensity of the light of three colors of red, green and blue, respectively, and thus there is a problem that the brightness is difficult to increase.
Disclosure of Invention
The embodiment of the invention provides a silicon-based micro-display and a preparation method thereof, which are used for improving the brightness of the silicon-based micro-display and solving the problem of difficult brightness improvement.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a silicon-based micro display, including:
providing a driving backboard;
Sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard;
wherein at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed by a plurality of dislocation evaporation modes and has different thicknesses; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer.
Optionally, the microcavity adjusting layer comprises a first microcavity adjusting layer, a second microcavity adjusting layer and a third microcavity adjusting layer with different thicknesses; the first micro-cavity adjusting layer is used for enhancing blue light in white light emitted by the white light emitting layer; the second microcavity adjusting layer is used for enhancing green light in white light emitted by the white light emitting layer; the third microcavity adjusting layer is used for enhancing red light in white light emitted by the white light emitting layer;
the micro-cavity adjusting layer formed in a multiple dislocation evaporation mode and not identical in thickness comprises the following components:
forming a first microcavity material layer on one side of the first electrode layer, which is far away from the driving backboard, based on a first mask;
evaporating a second microcavity material layer based on the length of one sub-pixel staggered from the first mask plate relative to the first microcavity material layer; the second microcavity material layer is positioned on one side of the first microcavity material layer away from the driving backboard;
Evaporating a third microcavity material layer based on the length of one sub-pixel staggered from the first mask plate relative to the second microcavity material layer; the third microcavity material layer is positioned on one side of the second microcavity material layer away from the driving backboard;
the first microcavity adjusting layer is formed at a position where the first microcavity material layer is formed independently and a position where the third microcavity material layer is formed independently, and the second microcavity adjusting layer is formed at a position where the first microcavity material layer and the second microcavity material layer are formed in a laminated manner and a position where the third microcavity material layer and the second microcavity material layer are formed in a laminated manner; and the third microcavity regulating layer is formed at the position corresponding to the position where the first microcavity material layer, the second microcavity material layer and the third microcavity material layer are formed in a laminated manner.
Optionally, the thickness of the first microcavity material layer is equal to the thickness of the third microcavity material layer;
and forming a first microcavity regulating layer, a second microcavity regulating layer, a third microcavity regulating layer, a second microcavity regulating layer and a first microcavity regulating layer which are sequentially arranged along the direction of dislocation evaporation after three times of evaporation processes.
Optionally, the white light emitting layer includes a blue light emitting material layer, a green light emitting material layer, and a red light emitting material layer;
Forming the light emitting layer includes:
sequentially forming a blue luminescent material layer, a green luminescent material layer and a red luminescent material layer on one side of the first functional layer far away from the driving backboard based on the second mask;
the opening of the second mask exposes the whole display area of the silicon-based micro display; and in the direction of dislocation evaporation, the openings of the first mask plate simultaneously expose the lengths of the four sub-pixels.
Optionally, the first electrode layer includes an anode layer, and the second electrode layer includes a cathode layer; the first functional layer comprises at least two layers of a hole injection layer, a hole transport layer and an electron blocking layer; the second functional layer includes at least two of an electron injection layer, an electron transport layer, and a hole blocking layer.
In the first functional layer, the hole transport layer or the electron blocking layer is used for forming the micro-cavity adjusting layer;
in the second functional layer, the electron transport layer or the hole blocking layer is used to form the microcavity regulating layer.
Optionally, after forming the first electrode layer, the first functional layer, the white light emitting layer, the second functional layer and the second electrode layer on one side of the driving back plate in sequence, the method further includes:
Forming a filter layer on one side of the second electrode layer away from the driving backboard; the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first micro-cavity adjusting layer are arranged in an alignment manner, and the green light filtering unit and the second micro-cavity adjusting layer are arranged in an alignment manner; the red light filtering unit and the third microcavity adjusting layer are arranged in an alignment mode.
Optionally, after forming the first electrode layer, the first functional layer, the white light emitting layer, the second functional layer and the second electrode layer on one side of the driving back plate in sequence, the method further includes:
forming a thin film packaging layer on one side of the second electrode layer far away from the driving backboard; the thin film encapsulation layer is positioned between the second electrode layer and the filter layer.
In a second aspect, an embodiment of the present invention provides a silicon-based microdisplay, including:
a drive back plate;
a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer which are sequentially laminated on one side of the driving backboard;
wherein at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed by a plurality of dislocation evaporation modes and has different thicknesses; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer.
Optionally, the microcavity adjusting layer comprises a first microcavity adjusting layer, a second microcavity adjusting layer and a third microcavity adjusting layer with different thicknesses; the first micro-cavity adjusting layer is used for enhancing blue light in white light emitted by the white light emitting layer; the second microcavity adjusting layer is used for enhancing green light in white light emitted by the white light emitting layer; the third microcavity adjusting layer is used for enhancing red light in white light emitted by the white light emitting layer;
wherein the first microcavity adjustment layer comprises a first microcavity material layer; the second microcavity adjusting layer comprises a first microcavity material layer and a second microcavity material layer which are formed in a laminated mode, and a third microcavity material layer and a second microcavity material layer which are formed in a laminated mode; the third microcavity adjusting layer comprises a first microcavity material layer, a second microcavity material layer and a third microcavity material layer which are formed in a laminated mode.
Optionally, the thickness of the first microcavity material layer is equal to the thickness of the third microcavity material layer;
and forming a first microcavity regulating layer, a second microcavity regulating layer, a third microcavity regulating layer, a second microcavity regulating layer and a first microcavity regulating layer which are sequentially arranged along the direction of dislocation evaporation after three times of evaporation processes.
The embodiment of the invention provides a silicon-based micro display and a preparation method thereof, wherein the preparation method comprises the following steps: providing a driving backboard; sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard; at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed in a multiple dislocation evaporation mode and has the thickness not identical; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer. According to the embodiment of the invention, the microcavity adjusting layer with the thickness not identical is formed by adopting a multiple dislocation evaporation mode under the action of the mask, so that microcavity thickness inconsistency corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized, and microcavity thicknesses of the three are targeted. When the sub-pixel points corresponding to RGB emit light, the peak positions of the RGB are respectively corresponding to the maximum white light spectrum peak values, so that the spectrum intensity of the corresponding color can be improved, the brightness improvement of the silicon-based micro-display is finally realized, and the problem of difficulty in brightness improvement is solved.
Drawings
FIG. 1 is a schematic diagram of a silicon-based microdisplay in accordance with the prior art;
fig. 2 is a schematic structural view of a pixel unit provided in the prior art;
FIG. 3 is a schematic diagram of another pixel cell provided in the prior art;
fig. 4 is a schematic structural view of another pixel unit provided in the prior art;
FIG. 5 is a flowchart of a method for fabricating a silicon-based micro-display according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a silicon-based micro-display according to an embodiment of the present invention;
FIG. 7 is a flowchart of another method for fabricating a silicon-based micro-display according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a second mask provided in an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a first mask according to an embodiment of the present invention;
fig. 10 is a schematic diagram of a position of a first mask corresponding to step S240 in a method for manufacturing a silicon-based micro-display according to an embodiment of the present invention;
fig. 11 is a schematic diagram of a position of a first mask corresponding to step S250 in a method for manufacturing a silicon-based micro-display according to an embodiment of the present invention;
fig. 12 is a schematic diagram of a position of a first mask corresponding to step S260 in a method for manufacturing a silicon-based micro-display according to an embodiment of the present invention;
Fig. 13 is a schematic layout diagram of a sub-pixel according to an embodiment of the present invention;
FIG. 14 is a white light spectrum of a blue subpixel according to an embodiment of the present invention;
FIG. 15 is a white light spectrum of a green sub-pixel according to an embodiment of the present invention;
FIG. 16 is a white light spectrum of a red subpixel according to an embodiment of the present invention;
fig. 17 is a flowchart of another method for manufacturing a silicon-based micro-display according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
As background technology, with the vigorous development of the domestic panel industry and the daily variation of semiconductor technology, the silicon-based Micro OLED technology based on panel combined with semiconductor technology is also rapidly developing. The silicon-based Micro OLED Micro display device is different from the traditional AMOLED in that a single crystal silicon chip is adopted as a substrate of the Micro OLED Micro display device, and amorphous silicon, microcrystalline silicon or a low-temperature polycrystalline silicon thin film transistor is adopted as a backboard of the Micro OLED Micro display device. The biggest advantage of using a monocrystalline silicon chip as a substrate is that the pixel size is smaller than that of a conventional display device, and the single finesse is much higher than that of a conventional device.
Fig. 1 is a schematic structural diagram of a silicon-based micro-display provided in the prior art, referring to fig. 1, the silicon-based micro-display includes a driving back plate 110, an anode 120 formed on one side of the driving back plate 110, a white light emitting layer 130, a light filter, and a package cover 160 fixed on the surface of the display by a UV glue 150. The filter includes a red filter unit 141, a green filter unit 142, and a blue filter unit 143, and the red, green, and blue sub-pixels are defined by the red filter unit 141, the green filter unit 142, and the blue filter unit 143, thereby realizing colorization. The existing silicon-based micro-display mainly adopts the white light emitting layer 130 and the color filter structure to realize colorization, and the main reason is that the silicon-based micro-display is required to have very high display resolution (generally >2000 PPI), while the traditional method of adopting the precise mask evaporation is limited by the mask manufacturing precision and the limitation of the size of the opening, and the most advanced process capability in the world can realize the size of the minimum opening of 10um which is far smaller than the minimum opening of the mask. Fig. 2 is a schematic structural view of one pixel unit provided in the related art, fig. 3 is a schematic structural view of another pixel unit provided in the related art, fig. 4 is a schematic structural view of another pixel unit provided in the related art, and referring to fig. 2 to 4, the pixel unit includes red, green and blue sub-pixels. The sub-pixel size of the micro-display is generally square 3×7um (L1 is 7um and L2 is 3um in fig. 2), the diagonal of diamond is 4×6um (L3 is 6um and L4 is 4um in fig. 3), the height of hexagon is 6um (L5 is 6um in fig. 4), etc. which is far smaller than the minimum opening of the mask.
However, the white light emitting layer 130 combines with the color filter to realize colorization, so that the display brightness loss is large (> 80%), and most of brightness is sacrificed, resulting in the reduction of the brightness of the silicon-based micro-display product. In addition, since the light of three colors of red, green and blue corresponds to the optical microcavities with different thicknesses, the WOLED of the top emission structure with a single optical thickness cannot maximize the intensity of the light of three colors of red, green and blue, respectively, so that the problem of difficulty in improving the brightness exists.
In view of this, first, an embodiment of the present invention provides a method for manufacturing a silicon-based micro-display, fig. 5 is a flowchart of the method for manufacturing a silicon-based micro-display provided by the embodiment of the present invention, and fig. 6 is a schematic structural diagram of the silicon-based micro-display provided by the embodiment of the present invention, and referring to fig. 5 to fig. 6, the method includes:
s110, providing a driving backboard.
Specifically, the driving back plate 10 is a film layer structure that can provide driving signals for the display panel and perform buffering, protection, or supporting functions. The driving backboard 10 in the silicon-based micro-display is a silicon-based driving backboard 10, and the silicon-based driving backboard 10 is composed of a whole silicon-based chip. The drive backplate 10 may comprise a silicon substrate and COMS circuitry on the bottom side of the silicon scale. The cmos circuitry includes the pixel circuitry, row and column driver circuitry, and other functional circuitry required for a silicon-based microdisplay.
S120, sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard; at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed in a multiple dislocation evaporation mode and has the thickness not identical; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer.
Specifically, the first electrode layer 20 is located at one side of the driving backplate 10, and is connected to the COMS circuit in the driving backplate 10. The first functional layer is formed on one side of the first electrode layer 20 away from the driving back plate 10, the white light emitting layer 40 is formed on one side of the first functional layer away from the driving back plate 10, and the second functional layer 50 is formed on one side of the white light emitting layer 40 away from the driving back plate 10; the second electrode layer 60 is formed on a side of the second functional layer 50 away from the driving back plate 10. The first electrode layer 20 includes a plurality of first electrodes 21 spaced apart from one another on one side of the driving backplate 10, and the first electrodes 21 may be anodes, i.e., the first electrode layer 20 includes an anode layer, and the second electrode layer 60 is an cathode layer. The second electrode layer 60 is a common electrode layer, and the film layer where the second electrode layer 60 is located is an integral conductive layer. The silicon-based micro display may be a top emission structure, and the anode layer may be a reflective electrode layer formed of magnesium or silver by vapor deposition, and the cathode layer may be a transparent electrode layer formed of ITO. If a voltage is applied between the first electrode layer 20 and the second electrode layer 60, the white light emitting layer 40 emits visible light, thereby realizing an image that can be recognized by a user.
Wherein at least one of the first functional layer and the second functional layer 50 comprises a microcavity adjusting layer which is formed by a plurality of dislocation evaporation modes and has a non-identical thickness; the microcavity adjustment layers of different thicknesses are used to enhance the different colors of light in the white light emitted by the white light emitting layer 40. If the first electrode layer 20 includes an anode layer and the second electrode layer 60 includes a cathode layer, the first functional layer includes at least two of a hole injection layer 31, a hole transport layer, and an electron blocking layer; the second functional layer 50 includes at least two of an electron injection layer, an electron transport layer, and a hole blocking layer. In the first functional layer, a hole transport layer or an electron blocking layer may be used to form a microcavity adjustment layer; in the second functional layer 50, an electron transport layer or a hole blocking layer may be used to form a microcavity conditioning layer. Under the effect of the mask, the mode of multiple dislocation evaporation is adopted, and the microcavity adjusting layer with the thickness not identical is formed, so that microcavity thickness inconsistency corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized, and microcavity thicknesses of the three are targeted. When the sub-pixel points corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel emit light, the peak positions of the white light spectrum corresponding to the peak positions of the red light, the green light and the blue light respectively are guaranteed to be maximum, so that the spectrum intensity of the corresponding color can be improved, the brightness improvement of the silicon-based micro-display is finally realized, and the problem of difficulty in brightness improvement is solved.
The preparation method of the silicon-based micro display provided by the embodiment of the invention comprises the following steps: providing a driving backboard; sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard; at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed in a multiple dislocation evaporation mode and has the thickness not identical; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer. According to the embodiment of the invention, the microcavity adjusting layer with the thickness not identical is formed by adopting a multiple dislocation evaporation mode under the action of the mask, so that microcavity thickness inconsistency corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized, and microcavity thicknesses of the three are targeted. When the sub-pixel points corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel emit light, the peak positions of the white light spectrum corresponding to the peak positions of the red light, the green light and the blue light respectively are guaranteed to be maximum, so that the spectrum intensity of the corresponding color can be improved, the brightness improvement of the silicon-based micro-display is finally realized, and the problem of difficulty in brightness improvement is solved.
Optionally, the microcavity conditioning layer is located in the first functional layer. If the microcavity adjustment layer is located in the second functional layer 50, the light emitted by the white light emitting layer 40 sequentially passes through the second functional layer 50 and the second electrode layer 60 and then exits, and the optical path of the light emitted by the white light emitting layer 40 passing through the microcavity adjustment layer in the second functional layer 50 is the thickness corresponding to the microcavity adjustment layer. In the embodiment of the invention, the microcavity adjusting layer is arranged in the first functional layer, the light emitted by the white light emitting layer 40 is reflected at the first electrode layer 20 after passing through the first functional layer, the emitted light is injected into the microcavity adjusting layer in the first functional layer again, and passes through the light emitting layer, the second functional layer 50 and the second electrode layer 60 in sequence after passing through the microcavity adjusting layer. The light emitted by the white light emitting layer 40 passes through the microcavity adjustment layer in the first functional layer twice the thickness of the microcavity adjustment layer. That is, when the same thickness is changed, the micro-cavity adjusting layer is disposed in the first functional layer, which is more beneficial to increasing the optical path difference of the light emitted by the red sub-pixel, the green sub-pixel and the blue sub-pixel, so as to realize the maximum peak positions of the spectrum of the white light corresponding to the peak positions of the red light, the green light and the blue light respectively when the sub-pixel points corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel emit light. Alternatively, the micro-cavity adjusting layer is disposed in the first functional layer under the condition of changing the same optical path, which is more beneficial to obtain a silicon-based micro-display with a thinner film thickness than the micro-cavity adjusting layer is disposed in the second functional layer 50.
In addition, the first functional layer includes at least two layers of the hole injection layer 31, the hole transport layer, and the electron blocking layer. When the hole injection layer 31 is used as a microcavity adjustment layer, optical crosstalk is likely to occur when the thickness of the hole injection layer 31 is adjusted. Therefore, the embodiment of the invention uses the hole transport layer or the electron blocking layer as the micro-cavity adjusting layer.
Optionally, referring to fig. 6, the microcavity adjustment layer includes a first microcavity adjustment layer 331, a second microcavity adjustment layer 332, and a third microcavity adjustment layer 333, which are different in thickness; the first micro-cavity adjusting layer 331 is used for enhancing blue light in the white light emitted by the white light emitting layer 40; the second micro-cavity adjustment layer 332 is used for enhancing green light in the white light emitted by the white light emitting layer 40; the third micro-cavity adjustment layer 333 is used to enhance the red light in the white light emitted from the white light emitting layer 40.
The micro-cavity adjusting layer formed by multiple dislocation evaporation methods and not identical in thickness comprises the following components:
forming a first microcavity material layer 321 on one side of the first electrode layer away from the driving backboard based on the first mask;
evaporating a second microcavity material layer 322 based on the length of one sub-pixel staggered from the first mask with respect to the first microcavity material layer 321; the second microcavity material layer 322 is located on the side of the first microcavity material layer 321 away from the driving back plate 10;
Evaporating a third microcavity material layer 323 based on the first mask by one subpixel length relative to the second microcavity material layer 322; the third microcavity material layer 323 is located on a side of the second microcavity material layer 322 away from the driving back plate 10;
wherein, the position where the first microcavity material layer 321 is formed separately corresponds to the position where the first microcavity adjusting layer 331 is formed, the position where the first microcavity material layer 321 and the second microcavity material layer 322 are formed in a laminated manner corresponds to the position where the third microcavity material layer 323 and the second microcavity material layer 322 are formed in a laminated manner, and the second microcavity adjusting layer 332 is formed; the first microcavity material layer 321, the second microcavity material layer 322, and the third microcavity material layer 323 are stacked at positions corresponding to the formation of the third microcavity adjustment layer 333.
To sum up, fig. 7 is a flowchart of another method for manufacturing a silicon-based micro-display according to an embodiment of the present invention, and referring to fig. 7 and 6, the method includes:
s210, providing a driving backboard.
S220, forming a first electrode layer on one side of the driving backboard.
And S230, forming a hole injection layer in the first functional layer on one side of the first electrode layer away from the driving backboard.
Specifically, fig. 8 is a schematic structural diagram of a second mask provided in an embodiment of the present invention, referring to fig. 8, a hole injection layer 31 is evaporated on a side of the first electrode layer 20 away from the driving back plate 10 by using the second mask 300, and an opening 310 of the second mask 300 exposes the entire display area of the silicon-based micro display. The second reticle 300 may be a universal metal reticle (Common Metai Mask, CMM), which is mainly used in the production process of large-sized OLED panels.
S240, forming a first microcavity material layer on one side of the hole injection layer, which is far away from the driving backboard, based on the first mask.
Specifically, fig. 9 is a schematic structural diagram of a first Mask provided in an embodiment of the present invention, referring to fig. 9, the first Mask 200 may be a Fine Metal Mask (FMM), and an opening 210 of the first Mask 200 is greater than or equal to 10um. The FMM is mainly used in the manufacturing process of the medium-small size OLED panel. Fig. 10 is a schematic diagram of a position of a first mask corresponding to step S240 in a method for manufacturing a silicon-based micro-display according to an embodiment of the present invention, referring to fig. 10, a first microcavity material layer 321 is formed on a side of a hole injection layer 31 away from a driving back plate 10, where the first microcavity material layer 321 is a material of a hole transport layer.
S250, evaporating a second microcavity material layer based on the length of one sub-pixel staggered from the first mask plate relative to the first microcavity material layer; the second microcavity material layer is located on the side of the first microcavity material layer away from the driving back plate.
Specifically, fig. 11 is a schematic diagram of a position of a first mask corresponding to step S250 in a method for manufacturing a silicon-based micro-display according to an embodiment of the present invention, and referring to fig. 11, with respect to a first microcavity material layer 321, a second microcavity material layer 322 is evaporated based on a sub-pixel length displaced by one sub-pixel length of the first mask 200; the second microcavity material layer 322 is located on the side of the first microcavity material layer 321 away from the driving back plate 10, and the second microcavity material layer 322 is a hole transporting layer material.
S260, evaporating a third microcavity material layer relative to the second microcavity material layer based on the length of one sub-pixel staggered from the first mask; the third microcavity material layer is positioned on one side of the second microcavity material layer away from the driving back plate.
Specifically, fig. 12 is a schematic diagram of a position of a first mask corresponding to step S260 in the method for manufacturing a silicon-based micro-display according to the embodiment of the present invention, referring to fig. 12, with respect to the second microcavity material layer 322, a sub-pixel length is displaced again based on the first mask 200, and a third microcavity material layer 323 is evaporated; the third microcavity material layer 323 is located on the side of the second microcavity material layer 322 remote from the driving backplate 10. The third microcavity material layer 323 is a material of the hole transporting layer. Wherein, the position where the first microcavity material layer 321 is formed separately and the position where the third microcavity material layer 323 is formed separately correspond to the position where the first microcavity adjustment layer 331 is formed, the position where the first microcavity material layer 321 and the second microcavity material layer 322 are formed in a stacked manner and the position where the third microcavity material layer 323 and the second microcavity material layer 322 are formed in a stacked manner correspond to the second microcavity adjustment layer 332; the first microcavity material layer 321, the second microcavity material layer 322, and the third microcavity material layer 323 are stacked at positions corresponding to the formation of the third microcavity adjustment layer 333. The first micro-cavity adjusting layer 331 is used for enhancing blue light in the white light emitted by the white light emitting layer 40; the second micro-cavity adjustment layer 332 is used for enhancing green light in the white light emitted by the white light emitting layer 40; the third micro-cavity adjustment layer 333 is used to enhance the red light in the white light emitted from the white light emitting layer 40. That is, the first microcavity adjustment layer 331 correspondingly adjusts the luminance of the blue sub-pixel B, the second microcavity adjustment layer 332 correspondingly adjusts the luminance of the green sub-pixel G, and the third microcavity adjustment layer 333 correspondingly adjusts the luminance of the red sub-pixel R.
In the dislocation evaporation direction X, a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, a third microcavity adjusting layer 333, a second microcavity adjusting layer 332 and a first microcavity adjusting layer 331 are sequentially formed after three evaporation processes. Namely, after three evaporation processes, the microcavity adjusting layers of the two blue sub-pixels B, the microcavity adjusting layers of the two green sub-pixels G and the microcavity adjusting layers of the two red sub-pixels R can be respectively formed, so that the preparation efficiency of the silicon-based micro-display is improved. The thickness of the first microcavity material layer 321 may be equal to the thickness of the third microcavity material layer 323, for example, the thicknesses of the first microcavity material layer 321 and the third microcavity material layer 323 are both 20nm, and the thickness of the second microcavity material layer 322 is 25nm. The thickness of the first microcavity adjustment layer 331 including the first microcavity material layer 321 can be made equal to the thickness of the first microcavity adjustment layer 331 including the third microcavity material layer 323. The thickness of the second microcavity adjustment layer 332 including the first microcavity material layer 321 and the second microcavity material layer 322 can also be made equal to the thickness of the second microcavity adjustment layer 332 including the first microcavity material layer 321 and the second microcavity material layer 322. Thus, the thickness of each second microcavity adjusting layer 332 is equal in the whole silicon-based micro-display, and the enhancement degree of the brightness of each green sub-pixel G is the same; the thickness of each first microcavity adjusting layer 331 is equal, the enhancement degree of the brightness of each blue sub-pixel B is the same, and the display effect of the device is ensured. It should be noted that, in fig. 6, only the forming sequence of the first microcavity material layer 321, the second microcavity material layer 322, and the third microcavity material layer 323 is illustrated, and in practice, the height of the first microcavity adjustment layer 331 including the first microcavity material layer 321 is equal to the height of the first microcavity adjustment layer 331 including the third microcavity material layer 323; the height of the second microcavity adjustment layer 332 comprising the first microcavity material layer 321 and the second microcavity material layer 322 is equal to the height of the second microcavity adjustment layer 332 comprising the first microcavity material layer 321 and the second microcavity material layer 322.
Along the direction X of dislocation evaporation, the openings of the first mask 200 simultaneously expose the lengths of four sub-pixels. The actual opening of the first mask 200 is greater than or equal to 10um, and thus, the minimum dislocation length of the evaporation material based on the dislocation of the first mask 200 by one sub-pixel length is 2.5um. The minimum pixel length can be designed to be 2.5um. The pattern of the first mask 200 may include a plurality of openings 210, and the plurality of openings 210 are simultaneously evaporated in a staggered manner, so that the preparation efficiency of the silicon-based micro display is further improved. For example, referring to fig. 9, two adjacent openings 210 may be separated by two sub-pixel lengths. After the three evaporation processes, the two openings 210 may be respectively evaporated to form a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, a third microcavity adjusting layer 333, a second microcavity adjusting layer 332 and a first microcavity adjusting layer 331, so as to form microcavity adjusting layers corresponding to 12 sub-pixels. The adjacent blue sub-pixel B, green sub-pixel G, and red sub-pixel R constitute one pixel unit. Each opening 210 is vapor deposited to form a first microcavity adjustment layer 331, a second microcavity adjustment layer 332, a third microcavity adjustment layer 333, a second microcavity adjustment layer 332, and a first microcavity adjustment layer 331.
Fig. 13 is a schematic diagram of arrangement of sub-pixels according to an embodiment of the present invention, and referring to fig. 13, a silicon-based micro-device formed by the method includes pixel units arranged in an array, where the pixel units include a first pixel unit 1 and a second pixel unit 2, the pixel units in the same column are the same, and the first pixel unit 1 and the second pixel unit 2 in the pixel units in the same row are alternately arranged; the first pixel unit 1 comprises a blue sub-pixel B, a green sub-pixel G and a red sub-pixel R which are sequentially arranged; the second pixel unit 2 includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B sequentially arranged; the microcavity thicknesses corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are not uniform. That is, each opening 210 may form two adjacent pixel units after three dislocation evaporation processes, and the arrangement order of the sub-pixels of the two adjacent pixel units is opposite. Fig. 9 and 13 show only a small portion of the area subpixel arrangement and reticle design, with the whole being expanded and enlarged in parallel in this manner.
Fig. 14 is a white light spectrum diagram of light emitted by a blue sub-pixel provided by an embodiment of the present invention, fig. 15 is a white light spectrum diagram of light emitted by a green sub-pixel provided by an embodiment of the present invention, and fig. 16 is a white light spectrum diagram of light emitted by a red sub-pixel provided by an embodiment of the present invention, and referring to fig. 14 to 16, when sub-pixel points corresponding to the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B emit light, peak positions corresponding to red light, green light, and blue light respectively are the largest peak values of the white light spectrum. Under the action of the first mask 200, the first microcavity adjusting layer 331, the second microcavity adjusting layer 332 and the third microcavity adjusting layer 333 with different thicknesses are formed by adopting a multiple dislocation evaporation mode. The thickness of the first microcavity conditioning layer 331 is less than the thickness of the second microcavity conditioning layer 332, and the thickness of the second microcavity conditioning layer 332 is less than the thickness of the third microcavity conditioning layer 333. The first microcavity adjusting layer 331 correspondingly adjusts the microcavity thickness of the blue sub-pixel B, the second microcavity adjusting layer 332 correspondingly adjusts the microcavity thickness of the green sub-pixel G, and the third microcavity adjusting layer 333 correspondingly adjusts the microcavity thickness of the red sub-pixel R. The micro-cavity thicknesses corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are inconsistent, and the micro-cavity thicknesses of the three are targeted. When the sub-pixel points corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B emit light, the peak positions of the red light, the green light and the blue light respectively correspond to the maximum peak value of the white light spectrum. Therefore, the spectrum intensity of the corresponding color can be improved, the brightness improvement of the silicon-based micro-display is finally realized, and the problem of difficulty in brightness improvement is solved.
And S270, based on the second mask, sequentially forming a blue luminescent material layer, a green luminescent material layer and a red luminescent material layer on one side of the first functional layer, which is far away from the driving backboard.
Specifically, the white light emitting layer 40 may include a blue light emitting material layer for emitting blue light, a green light emitting material layer for emitting green light, and a red light emitting material layer for emitting red light, which are formed in a stacked manner. The blue light emitted by the blue luminescent material layer, the green light emitted by the green luminescent material layer and the red light emitted by the red luminescent material layer are mixed into white light. Forming the white light emitting layer includes sequentially forming a blue light emitting material layer, a green light emitting material layer, and a red light emitting material layer on a side of the first functional layer remote from the driving backplate 10 based on the second mask 300. The film and material selection after the third microcavity material layer 323 can be adjusted according to the display result of the device.
S280, based on the second mask, a second functional layer and a second electrode layer are sequentially formed on one side, far away from the driving backboard, of the white light emitting layer.
The technical scheme provided by the embodiment of the invention can ensure high PPI by optimizing pixel arrangement, and the mask can be easily manufactured and matched with pixel design. Simultaneously, under the action of a precision mask, the hole transmission layers are evaporated in a staggered manner for multiple times, so that the thicknesses of microcavities corresponding to the blue sub-pixel B, the green sub-pixel G and the red sub-pixel R are inconsistent, and when the pixel points corresponding to the blue sub-pixel B, the green sub-pixel G and the red sub-pixel R emit light, the peak positions of the white light spectrum peak values respectively correspond to the peak positions of the blue sub-pixel B, the green sub-pixel G and the red sub-pixel R to the maximum, thereby improving the brightness of the silicon-based OLED micro-display device.
Fig. 17 is a flowchart of another method for manufacturing a silicon-based micro-display according to an embodiment of the present invention, and referring to fig. 17, the method includes:
s310, providing a driving backboard.
S320, sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard; at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed in a multiple dislocation evaporation mode and has the thickness not identical; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer.
S330, forming a thin film packaging layer on one side of the second electrode layer away from the driving backboard.
Specifically, the film encapsulation layer is located on the second electrode layer. The thin film encapsulation layer protects the white light emitting layer and other thin layers from external moisture, oxygen, and the like. The thin film encapsulation layer may include an inorganic layer and an organic layer, which are alternately stacked. The inorganic layer in the film packaging layer can be formed by adopting an atomic layer deposition (Atomic layer deposition, ALD), a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) and other equipment to stack film coating modes. The organic layer may be formed by vapor deposition.
S340, forming a filter layer on one side of the thin film packaging layer far away from the driving backboard; the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first micro-cavity adjusting layer are arranged in an alignment manner, and the green light filtering unit and the second micro-cavity adjusting layer are arranged in an alignment manner; the red filter unit and the third microcavity adjusting layer are arranged in an alignment mode.
Specifically, a filter layer containing a color resistance material is formed on one side of the film packaging layer far away from the driving backboard through a yellow light process, the filter layer comprises a plurality of filter units, and the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first micro-cavity adjusting layer are arranged in an alignment manner, and the green light filtering unit and the second micro-cavity adjusting layer are arranged in an alignment manner; the red filter unit and the third microcavity adjusting layer are arranged in an alignment mode. After the light emitted by the light-emitting material layer passes through the light-filtering layer, the light-filtering layer can filter out three monochromatic lights of red, green and blue by changing the wavelength of the emergent light of the organic light-emitting diode, so as to realize the functions of the red, green and blue sub-pixels. The filter layer also comprises a black matrix positioned between the filter units, wherein the black matrix is used for preventing light crosstalk between different sub-pixels and ensuring the display effect of the display device.
The embodiment of the present invention also provides a silicon-based micro display, referring to fig. 6, the silicon-based micro display includes:
a drive back plate 10;
a first electrode layer 20, a first functional layer, a white light emitting layer 40, a second functional layer 50, and a second electrode layer 60, which are sequentially stacked on one side of the driving back plate 10;
wherein at least one of the first functional layer and the second functional layer 50 comprises a microcavity adjusting layer which is formed by a plurality of dislocation evaporation modes and has a non-identical thickness; the microcavity adjustment layers of different thicknesses are used to enhance the different colors of light in the white light emitted by the white light emitting layer 40.
Optionally, the microcavity adjustment layer includes a first microcavity adjustment layer 331, a second microcavity adjustment layer 332, and a third microcavity adjustment layer 333 that have different thicknesses; the first micro-cavity adjusting layer 331 is used for enhancing blue light in the white light emitted by the white light emitting layer 40; the second micro-cavity adjusting layer 332 is used for enhancing green light in the white light emitted by the white light emitting layer 40; the third micro-cavity adjusting layer 333 is used for enhancing red light in the white light emitted by the white light emitting layer 40;
wherein the first microcavity conditioning layer 331 comprises a first microcavity material layer 321; the second microcavity adjustment layer 332 includes a first microcavity material layer 321 and a second microcavity material layer 322 formed by lamination, and a third microcavity material layer 323 and a second microcavity material layer 322 formed by lamination; the third microcavity adjustment layer 333 includes a first microcavity material layer 321, a second microcavity material layer 322, and a third microcavity material layer 323, which are formed in a stacked manner.
Optionally, the thickness of the first microcavity material layer 321 is equal to the thickness of the third microcavity material layer 323;
along the direction of dislocation evaporation, a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, a third microcavity adjusting layer 333, a second microcavity adjusting layer 332 and a first microcavity adjusting layer 331 which are sequentially arranged are formed after three evaporation processes.
At least one of the first functional layer and the second functional layer 50 comprises microcavity regulating layers which are formed by a plurality of dislocation evaporation modes and have different thicknesses; the microcavity adjustment layers of different thicknesses are used to enhance the different colors of light in the white light emitted by the white light emitting layer 40. The first functional layer includes at least two layers of a hole injection layer 31, a hole transport layer, and an electron blocking layer; the second functional layer 50 includes at least two of an electron injection layer, an electron transport layer, and a hole blocking layer. In the first functional layer, a hole transport layer or an electron blocking layer may be used to form a microcavity adjustment layer; in the second functional layer 50, an electron transport layer or a hole blocking layer may be used to form a microcavity conditioning layer. Under the effect of the mask, the mode of multiple dislocation evaporation is adopted, and the microcavity adjusting layer with the thickness not identical is formed, so that microcavity thickness inconsistency corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B can be realized, and microcavity thicknesses of the three are targeted. When the sub-pixel points corresponding to RGB emit light, the peak positions of the RGB are respectively corresponding to the maximum white light spectrum peak values, so that the spectrum intensity of the corresponding color can be improved, the brightness improvement of the silicon-based micro-display is finally realized, and the problem of difficulty in brightness improvement is solved.
Referring to fig. 13, the formed silicon-based micro display includes pixel units arranged in an array, the pixel units include a first pixel unit 1 and a second pixel unit 2, the pixel units in the same column are the same, and the first pixel unit 1 and the second pixel unit 2 in the pixel units in the same row are alternately arranged; the first pixel unit 1 comprises a blue sub-pixel B, a green sub-pixel G and a red sub-pixel R which are sequentially arranged; the second pixel unit 2 includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B sequentially arranged; the microcavity thicknesses corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are not uniform.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (8)
1. A method for manufacturing a silicon-based microdisplay, comprising:
providing a driving backboard;
sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard;
wherein at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed by a plurality of dislocation evaporation modes and has different thicknesses; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer; the micro-cavity adjusting layer comprises a first micro-cavity adjusting layer, a second micro-cavity adjusting layer and a third micro-cavity adjusting layer which are different in thickness; the first micro-cavity adjusting layer is used for enhancing blue light in white light emitted by the white light emitting layer; the second microcavity adjusting layer is used for enhancing green light in white light emitted by the white light emitting layer; the third microcavity adjusting layer is used for enhancing red light in white light emitted by the white light emitting layer;
the micro-cavity adjusting layer formed in a multiple dislocation evaporation mode and not identical in thickness comprises the following components:
forming a first microcavity material layer on one side of the first electrode layer, which is far away from the driving backboard, based on a first mask;
Evaporating a second microcavity material layer based on the length of one sub-pixel staggered from the first mask plate relative to the first microcavity material layer; the second microcavity material layer is positioned on one side of the first microcavity material layer away from the driving backboard;
evaporating a third microcavity material layer based on the length of one sub-pixel staggered from the first mask plate relative to the second microcavity material layer; the third microcavity material layer is positioned on one side of the second microcavity material layer away from the driving backboard;
the first microcavity adjusting layer is formed at a position where the first microcavity material layer is formed independently and a position where the third microcavity material layer is formed independently, and the second microcavity adjusting layer is formed at a position where the first microcavity material layer and the second microcavity material layer are formed in a laminated manner and a position where the third microcavity material layer and the second microcavity material layer are formed in a laminated manner; and the third microcavity regulating layer is formed at the position corresponding to the position where the first microcavity material layer, the second microcavity material layer and the third microcavity material layer are formed in a laminated manner.
2. The method of fabricating a silicon-based microdisplay of claim 1, wherein the thickness of the first microcavity material layer is equal to the thickness of the third microcavity material layer;
And forming a first microcavity regulating layer, a second microcavity regulating layer, a third microcavity regulating layer, a second microcavity regulating layer and a first microcavity regulating layer which are sequentially arranged along the direction of dislocation evaporation after three times of evaporation processes.
3. The method of manufacturing a silicon-based micro display according to claim 1, wherein the white light emitting layer comprises a blue light emitting material layer, a green light emitting material layer, and a red light emitting material layer which are stacked;
forming the light emitting layer includes:
sequentially forming a blue luminescent material layer, a green luminescent material layer and a red luminescent material layer on one side of the first functional layer far away from the driving backboard based on the second mask;
the opening of the second mask exposes the whole display area of the silicon-based micro display; and in the direction of dislocation evaporation, the openings of the first mask plate simultaneously expose the lengths of the four sub-pixels.
4. The method of fabricating a silicon-based microdisplay of claim 1, wherein said first electrode layer comprises an anode layer and said second electrode layer comprises a cathode layer; the first functional layer comprises at least two layers of a hole injection layer, a hole transport layer and an electron blocking layer; the second functional layer comprises at least two layers of an electron injection layer, an electron transport layer and a hole blocking layer;
In the first functional layer, the hole transport layer or the electron blocking layer is used for forming the micro-cavity adjusting layer;
in the second functional layer, the electron transport layer or the hole blocking layer is used to form the microcavity regulating layer.
5. The method of manufacturing a silicon-based micro display according to claim 1, further comprising, after sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer, and a second electrode layer on one side of the driving back plate:
forming a filter layer on one side of the second electrode layer away from the driving backboard; the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first micro-cavity adjusting layer are arranged in an alignment manner, and the green light filtering unit and the second micro-cavity adjusting layer are arranged in an alignment manner; the red light filtering unit and the third microcavity adjusting layer are arranged in an alignment mode.
6. The method of manufacturing a silicon-based micro display according to claim 5, further comprising, after sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer, and a second electrode layer on one side of the driving back plate:
Forming a thin film packaging layer on one side of the second electrode layer far away from the driving backboard; the thin film encapsulation layer is positioned between the second electrode layer and the filter layer.
7. A silicon-based microdisplay comprising:
a drive back plate;
a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer which are sequentially laminated on one side of the driving backboard;
wherein at least one of the first functional layer and the second functional layer comprises a microcavity regulating layer which is formed by a plurality of dislocation evaporation modes and has different thicknesses; the microcavity adjusting layers with different thicknesses are used for enhancing the light with different colors in the white light emitted by the white light emitting layer;
the micro-cavity adjusting layer comprises a first micro-cavity adjusting layer, a second micro-cavity adjusting layer and a third micro-cavity adjusting layer which are different in thickness; the first micro-cavity adjusting layer is used for enhancing blue light in white light emitted by the white light emitting layer; the second microcavity adjusting layer is used for enhancing green light in white light emitted by the white light emitting layer; the third microcavity adjusting layer is used for enhancing red light in white light emitted by the white light emitting layer;
wherein the first microcavity adjustment layer comprises a first microcavity material layer; the second microcavity adjusting layer comprises a first microcavity material layer and a second microcavity material layer which are formed in a laminated mode, and a third microcavity material layer and a second microcavity material layer which are formed in a laminated mode; the third microcavity adjusting layer comprises a first microcavity material layer, a second microcavity material layer and a third microcavity material layer which are formed in a laminated mode.
8. The silicon-based microdisplay of claim 7, wherein,
the thickness of the first microcavity material layer is equal to the thickness of the third microcavity material layer;
and forming a first microcavity regulating layer, a second microcavity regulating layer, a third microcavity regulating layer, a second microcavity regulating layer and a first microcavity regulating layer which are sequentially arranged along the direction of dislocation evaporation after three times of evaporation processes.
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