CN103268921B - Manufacture the method for WOLED, WOLED and display device - Google Patents
Manufacture the method for WOLED, WOLED and display device Download PDFInfo
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Abstract
The invention discloses a kind of method, WOLED and the display device that manufacture WOLED, the method comprises: on substrate, form the array base palte comprising anode array based on patterning processes, and form colored optical filtering substrates based on patterning processes, comprising: deposit transparent organic film and reflective metal film successively on described array base palte; Reflective metal film described in patterning removes the metallic film above described anode electrode; With the metallic film after described patterning for organic film transparent described in mask etching, expose described anode electrode, form pixel definition pattern; Evaporation organic light-emitting units and negative electrode successively on the array base palte forming pixel definition pattern; The array base palte and colored optical filtering substrates that comprise organic light-emitting units and negative electrode are fitted, forms WOLED, the WOLED light leakage phenomena existed in prior art can be avoided preferably, improve the image displaying quality of display device.
Description
Technical field
The present invention relates to Display Technique field, especially relate to a kind of method of manufacture white organic LED (WOLED, WhiteOrganicLightEmittingDiode), a kind of WOLED and a kind of display device.
Background technology
Flourish along with flat-panel screens technology, Organic Light Emitting Diode (OLED, OrganicLightEmittingDiode) with traditional liquid crystal display (LCD, LiquidCrystalDisplay) compare, except more frivolous, have more self-luminous, low power consumption, do not need backlight, without the good characteristic such as angle limitations and high reaction rate, become the main flow of flat-panel screens technology of future generation.
For realizing the true color of OLED display, a kind of mode is realized by white OLED (WOLED, WhiteOrganicLightEmittingDiode) and chromatic filter layer (CF, ColorFilter) superposition.Wherein, WOLED and CF layer additive process does not need masking process accurately, just can realize the high-resolution of OLED display.As shown in Figure 1; in prior art respectively formed comprise thin-film transistor (TFT; ThinFilmTransistor) array base palte WOLED luminescent layer and include edge protection layer PDL chromatic filter layer after; the tft array substrate of formation and CF layer are aimed at; pressing, thus form WOLED display unit.
In prior art, when carrying out tft array substrate and CF laminating closes process, the gap of certain numerical value can be there is between CF layer and WOLED luminescent layer, and because WOLED luminescent layer has self luminous light source characteristic, as shown in Figure 1, the light that organic light-emitting units sends, arrive in the process of color membrane substrates in side direction, this gap can make the WOLED display side direction light leak made, thus causes product colour mixture, and then affects the quality of display unit.
Summary of the invention
Embodiments provide the method, WOLED and the display device that manufacture WOLED, the WOLED light leakage phenomena existed in prior art can be avoided preferably, improve the image displaying quality of display device.
A kind of method manufacturing white organic LED WOLED, on substrate, the array base palte comprising anode array is formed based on patterning processes, and form colored optical filtering substrates based on patterning processes, comprising: deposit transparent organic film and reflective metal film successively on described array base palte; Reflective metal film described in patterning removes the metallic film above described anode electrode; With the metallic film after described patterning for organic film transparent described in mask etching, expose described anode electrode, form pixel definition pattern; Evaporation organic light-emitting units and negative electrode successively on the array base palte forming pixel definition pattern; The array base palte and colored optical filtering substrates that comprise organic light-emitting units and negative electrode are fitted, forms WOLED display.
One has white organic LED WOLED, comprises the array base palte and colored optical filtering substrates that are oppositely arranged, comprising: described array base palte comprises the pixel defining layer of anode array and definition pixel region; Cover the organic luminous layer of described pixel defining layer and anode electrode; Cover the cathode layer of described organic luminous layer; Metallic reflector is provided with between described organic luminous layer and described pixel defining layer.
A kind of display device, comprises above-mentioned white organic LED WOLED.
Adopt technique scheme, deposit transparent organic film and reflective metal film successively on the array base palte comprising anode array, and reflective metal film described in patterning, and with the transparent organic film that the metallic film after patterning deposits for mask etching, form pixel definition pattern, and evaporation organic light-emitting units and negative electrode successively, the array base palte formed and colored optical filtering substrates are fitted, form WOLED, owing to adding reflective metal film on array base palte, when fitting, although still there is space between array base palte and color membrane substrates, but the light source that WOLED luminescent layer its own transmission goes out, can be returned by metal reflection layer reflects, therefore, it is possible to avoid the WOLED display light leakage phenomena existed in prior art preferably, improve the image displaying quality of display unit.
Accompanying drawing explanation
Fig. 1 is in prior art, the WOLED display unit profile formed by WOLED and CF pressing of proposition;
Fig. 2 a is in the embodiment of the present invention, the WOLED display device structure composition schematic diagram of proposition;
Fig. 2 b ~ Fig. 2 d is in the embodiment of the present invention, the structure composition schematic diagram comprising the array base palte of anode array of the formation of proposition;
Fig. 3 a is in the embodiment of the present invention, the manufacture WOLED display unit method flow diagram of proposition;
Fig. 3 b is in the embodiment of the present invention, the array base palte forming process schematic diagram of proposition;
Fig. 3 c is in the embodiment of the present invention, the array base-plate structure composition schematic diagram of the deposition of reflective metallic film of proposition;
Fig. 3 d is in the embodiment of the present invention, the array base-plate structure composition schematic diagram of the formation reflective metal layer of proposition;
Fig. 3 e is in the embodiment of the present invention, the pixel defining layer pattern composition schematic diagram of proposition;
Fig. 3 f is in the embodiment of the present invention, the array base-plate structure composition schematic diagram after the evaporation negative electrode of proposition;
Fig. 4 is in the embodiment of the present invention, the WOLED display device structure composition schematic diagram of proposition;
Fig. 5 is in the embodiment of the present invention, the WOLED display unit operation principle schematic diagram of the increase metallic reflector of proposition.
Embodiment
Light leakage phenomena is there is for the WOLED display existed in prior art, make the problem that the image displaying quality of display unit is poor, the technical scheme that the embodiment of the present invention proposes here, by deposition of reflective metallic film on array base palte, after making array base palte and color membrane substrates laminating process, even if there is space, the light source that WOLED luminescent layer is launched also can reflect by the reflective metal film of deposition, avoid the colour mixture problem that the WOLED display side direction light leakage phenomena that exists in prior art causes preferably, improve the display quality of WOLED display preferably.
Below in conjunction with each accompanying drawing, the main of embodiment of the present invention technical scheme is realized principle, embodiment and set forth in detail the beneficial effect that should be able to reach.
The embodiment of the present invention proposes a kind of WOLED display unit here, as shown in Figure 2 a, comprises the array base palte 601 and colored optical filtering substrates 602 that are oppositely arranged, comprising:
Described array base palte 601 comprises the pixel defining layer 304 of anode array and definition pixel region, cover the organic luminous layer 306 of described pixel defining layer 304 and anode electrode, cover the cathode layer 307 of described organic luminous layer 306, between described organic luminous layer 306 and described pixel defining layer 304, be provided with metallic reflector 305.
Particularly, organic luminous layer 306 is provided with organic light-emitting units (in figure and not shown), and described organic light-emitting units can be white-light emitting unit.
Particularly, described pixel defining layer 304 can be, but not limited to be acrylic based material or organic resin material.
Particularly, described metallic reflector 305 can be that light reflectivity is greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
Preferably, described metallic reflector 305 is metallic aluminium rete or argent rete.
In concrete enforcement, the array base palte comprising anode array also comprises:
The TFT rete 302 of deposition on 301 on substrate, and the pixel electrode layer 303 of deposition on TFT rete 302.Wherein, in TFT rete 302, comprise the TFT zone of formation.In TFT zone, be formed with source region, gate electrode, source electrode and drain electrode (not shown in Fig. 2 a).
Particularly, in TFT rete 302, TFT zone comprises the grid of formation, active area, source area and drain region.Can adopt chemical vapor deposition method on the active area deposit thickness be the gate insulation layer of 100nm ~ 150nm, the material of gate insulation layer can be, but not limited to be silicon dioxide or silicon nitride etc.After formation gate insulation layer, on the substrate forming gate insulation layer, form grid by depositing operation and patterning processes.Wherein grid is positioned on the gate insulation layer of active area.After forming grid, carry out doping process process, to make formation source area, active area, active layer, drain region.On TFT rete 302, form pixel electrode rete 303 by depositing operation, then based on patterning processes, pixel electrode rete 303 forms anode, thus form the array base palte comprising anode array.
Preferably, the structure composition originally comprising anode array substrate is set forth below in conjunction with concrete accompanying drawing:
As shown in Figure 2 b, TFT rete 302 is included in the polysilicon layer (not shown) of deposition on substrate 301, carries out photoetching, etching technics process, be formed with source region 3021 and pixel electrode district 3022 to described polysilicon layer according to required figure.
As shown in Figure 2 c, by depositing operation and patterning processes process, active area 3021 forms gate insulation layer 3023.Wherein gate insulation layer can be silicon nitride or silicon dioxide.
As shown in Figure 2 d, based on patterning processes process, form grid 3024 on the substrate, the grid of formation is positioned on the gate insulation layer 3023 on described active area 3021.Carry out doping process process to the active area formed and pixel electrode district, to make formation source area, active area, active layer, drain region, described pixel electrode district forms pixel electrode layer.Wherein, described grid, active layer, source area and drain region form TFT zone, and active layer is between source-drain electrode area.Form the array base palte comprising anode array.
Correspondingly, the invention process also proposes a kind of display device here, and this display device comprises the WOLED of the above-mentioned proposition of the embodiment of the present invention.
The embodiment of the present invention proposes a kind of method manufacturing WOLED here, and as shown in Figure 3 a, concrete technology flow process is as following:
Step 21, forms the array base palte comprising anode array on substrate based on patterning processes, and forms colored optical filtering substrates based on patterning processes.
It should be noted that, in the technical scheme that the embodiment of the present invention proposes here, described in comprise the array base palte of anode array, be described in detail for Thin Film Transistor (TFT) (TFT, ThinFilmTransistor) array base palte.And, in the technical scheme that the embodiment of the present invention proposes here, only provide the main manufacturing process for the array base palte comprising anode array, in concrete enforcement, the array base palte comprising anode array that the manufacture method that can refer to tft array substrate in prior art proposes here to manufacture the embodiment of the present invention.
Wherein, forming the concrete technology flow process comprising the array base palte of anode array is: as shown in Figure 3 b, substrate 301 forms TFT rete 302, wherein, in the TFT rete 302 formed, comprises the TFT zone of formation.In TFT zone, be formed with source region, gate electrode, source electrode and drain electrode (not shown in Fig. 3 a).
Particularly, in TFT rete 302, TFT zone comprises the grid of formation, active area, source area and drain region.Can adopt chemical vapor deposition method on the active area deposit thickness be the gate insulation layer of 100nm ~ 150nm, the material of gate insulation layer can be, but not limited to be silicon dioxide or silicon nitride etc.After formation gate insulation layer, on the substrate forming gate insulation layer, form grid by depositing operation and patterning processes.Wherein grid is positioned on the gate insulation layer of active area.After forming grid, carry out doping process process, to make formation source area, active area, active layer, drain region.
On TFT rete 302, form pixel electrode rete 303 by depositing operation, then based on patterning processes, pixel electrode rete 303 forms anode, thus form the array base palte comprising anode array.
Particularly, described substrate can be, but not limited to be the substrate of arbitrary forms such as transparency carrier, ceramic substrate or metal substrate, in the technical scheme that the embodiment of the present invention proposes here, is not restricted this.
Wherein, the manufacturing process of colored optical filtering substrates is identical with the manufacturing process of the colored optical filtering substrates proposed in prior art, and the embodiment of the present invention repeats no more here.
Step 22, deposit transparent organic film and reflective metal film successively on the array base palte formed.
Wherein, as shown in Figure 3 c, comprise on the array base palte of anode array what formed, successively deposit transparent organic film layer by layer 304 and reflective metal film 305.The material of transparent organic film 304 can be, but not limited to be acrylic based material or organic resin material.The thickness of the transparent organic film of deposition can between 1um ~ 2.5um, and preferably, can be, but not limited to is 1.5um or 2um.In the technical scheme that the embodiment of the present invention proposes here, this is not limited, can change according to practical application request.
Particularly, the material of the reflective metal film 305 of deposition can be that light reflectivity is greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.This metallic diaphragm can be, but not limited to be metallic aluminium rete or argent rete.
Preferably, in the technical scheme that the embodiment of the present invention proposes here, the material of the reflective metal film 305 of deposition is the argent rete with higher light reflectivity.
Step 23, reflective metal film described in patterning, removes the metallic film above described anode electrode.
Wherein, as shown in Figure 3 d, the patterning processes such as mask, exposure, development, photoetching, etching can be carried out to the reflective metal film 305 of deposition, remove the reflective metal film be positioned at above anode electrode.
Step 24, with the metallic film after described patterning for organic film transparent described in mask etching, exposes described anode electrode, forms pixel definition pattern.
Wherein, dry etching can be adopted to remove transparent organic film directly over described anode electrode, expose described anode electrode, form pixel definition pattern.
Particularly, the profile of pixel defining layer 304 can with reference to shown in Fig. 3 e, and pixel defining layer 304 covers pixel electrode periphery.
Particularly, in step 23 ~ step 24, when carrying out patterned process, the mask plate with same pattern can be adopted to process accordingly.
It should be noted that, in above-mentioned steps 23 ~ step 24, be the one preferably implementation that the embodiment of the present invention proposes here.In concrete enforcement, to the array base palte after deposit transparent organic film successively and reflective metal film, the mask plate with identical patterns can also be adopted, together with reflective metal film, patterning is carried out to transparent organic film, expose anode electrode, form pixel definition layer pattern.Or to the array base palte after deposit transparent organic film successively and reflective metal film, adopt same mask plate, respectively patterned process is carried out to the reflective metal film deposited and transparent organic film, cruelly spill anode electrode, form pixel definition pattern.
Preferably, the mask plate that patterned reflection metallic film uses can be, but not limited to be the pixel defining layer mask plate that patterned pixel definition layer uses, and also can be the mask plate with pixel definition layer pattern of additional customized.
Preferably, in the technical scheme that the embodiment of the present invention proposes here, when carrying out patterning to the reflective metal film of deposition, employing be pixel defining layer mask plate, like this can preferably by the quantity of few use mask plate, reduce the production cost of enterprise.
Step 25, evaporation organic light-emitting units and negative electrode successively on the array base palte forming pixel definition pattern.
Wherein, the array base palte forming pixel definition pattern forms OLED.Particularly, thin film deposition processes can be adopted on the array base palte forming pixel definition pattern to form hole transmission layer, organic luminous layer, electron transfer layer, OLED top electrodes successively, form OLED.
As illustrated in figure 3f, on the array base palte forming pixel definition pattern, evaporation organic light-emitting units 306 and negative electrode 307 successively, thus form array base palte 401.
Particularly, the organic light-emitting units 306 of evaporation can be white-light emitting unit.
Step 26, fits the array base palte and colored optical filtering substrates that comprise organic light-emitting units and negative electrode, forms WOLED display unit.
Wherein, as shown in Figure 4, the array base palte 401 of formation and colored optical filtering substrates 402 are carried out laminating process, form WOLED display unit.
Particularly, the manufacturing process of colored optical filtering substrates is identical with prior art, and the embodiment of the present invention no longer repeats here.
Adopt the technical scheme that the embodiment of the present invention proposes, the WOLED profile formed as shown in Figure 5, owing to adding the metallic reflector with reflective function, thus the light that luminescence unit is sent, arrive in the process of side direction colored optical filtering substrates, running into the metallic reflector with high reflectance is reflected back as shown in Figure 5, thus, even if still there is gap after laminating, also side direction light leakage phenomena can be reduced preferably, achieve the object reducing colour mixture, and then improve the image displaying quality of WOLED.
Adopt the technical scheme that the embodiment of the present invention proposes here, when making array base palte, by deposition layer of metal reflector, make the light sent from organic light-emitting units, reach at a certain angle in the process of color membrane substrates, can be returned by metal reflection layer reflects, thus reduce WOLED side direction light leakage phenomena, realize the object reducing colour mixture, improve display quality preferably.
Although describe the preferred embodiments of the present invention, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (13)
1. manufacture a method of white organic LED WOLED, on substrate, form the array base palte comprising anode array based on patterning processes, and form colored optical filtering substrates based on patterning processes, it is characterized in that, comprising:
Deposit transparent organic film and reflective metal film successively on described array base palte;
Reflective metal film described in patterning removes the metallic film above described anode electrode;
With the metallic film after described patterning for organic film transparent described in mask etching, expose described anode electrode, form pixel definition pattern;
Evaporation organic light-emitting units and negative electrode successively on the array base palte forming pixel definition pattern;
The array base palte and colored optical filtering substrates that comprise organic light-emitting units and negative electrode are fitted, forms WOLED.
2. the method for claim 1, is characterized in that, carries out mask, exposure, development, photoetching, etching technics, remove the metallic diaphragm be positioned at directly over anode electrode to the reflective metals rete before described patterning.
3. method as claimed in claim 2, is characterized in that, employing dry etching removes the transparent organic film directly over described anode electrode, exposes described anode electrode, forms pixel definition pattern.
4. the method for claim 1, is characterized in that, described organic light-emitting units is white-light emitting unit.
5. the method for claim 1, is characterized in that, described transparent organic film is organic resin material.
6. the method for claim 1, is characterized in that, described metallic reflector for light reflectivity be greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
7. method as claimed in claim 4, it is characterized in that, described metallic reflector is metallic aluminium rete or argent rete.
8. a white organic LED WOLED, comprises the array base palte and colored optical filtering substrates that are oppositely arranged, it is characterized in that, comprising:
Described array base palte comprises the pixel defining layer of anode array and definition pixel region;
Cover the organic luminous layer of described pixel defining layer and anode electrode;
Cover the cathode layer of described organic luminous layer;
Metallic reflector is provided with between described organic luminous layer and described pixel defining layer.
9. the WOLED as described in claim 8, is characterized in that, described organic luminous layer is provided with organic light-emitting units, and described organic light-emitting units is white-light emitting unit.
10. WOLED as claimed in claim 8, it is characterized in that, described pixel defining layer is organic resin material.
11. WOLED as claimed in claim 8, is characterized in that, described metallic reflector is that light reflectivity is greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
12. WOLED as claimed in claim 11, is characterized in that, described metallic reflector is metallic aluminium rete or argent rete.
13. 1 kinds of display devices, is characterized in that, comprise as arbitrary in claim 8 ~ 12 as described in white organic LED WOLED.
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Families Citing this family (16)
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|---|---|---|---|---|
| CN103839974B (en) * | 2014-03-12 | 2016-05-25 | 四川虹视显示技术有限公司 | WOLED, WOLED preparation method and WOLED driving method |
| CN104952905A (en) * | 2015-05-06 | 2015-09-30 | 京东方科技集团股份有限公司 | Organic light-emitting display panel, preparation method thereof and display device |
| CN106159107B (en) * | 2016-08-09 | 2018-05-29 | 京东方科技集团股份有限公司 | Organic LED illuminating lamp piece and preparation method thereof |
| KR102631461B1 (en) | 2016-10-26 | 2024-01-30 | 엘지디스플레이 주식회사 | Display device having a emitting area and a reflecting area |
| CN107068718B (en) * | 2017-04-10 | 2019-12-17 | 深圳市华星光电技术有限公司 | WOLED display device |
| CN107527941B (en) | 2017-08-31 | 2019-09-17 | 维信诺科技股份有限公司 | A kind of organic light emitting display and its manufacturing method |
| CN108172600B (en) * | 2017-12-29 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate for WOLED display and WOLED display |
| CN108232031A (en) * | 2018-01-03 | 2018-06-29 | 深圳市华星光电技术有限公司 | OLED display device and preparation method |
| CN110164909B (en) * | 2018-04-24 | 2021-03-16 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN108550615A (en) * | 2018-05-31 | 2018-09-18 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and display |
| CN109599507A (en) * | 2018-12-13 | 2019-04-09 | 武汉华星光电半导体显示技术有限公司 | The preparation method of display |
| CN110224076B (en) | 2019-05-15 | 2020-08-11 | 武汉华星光电半导体显示技术有限公司 | OLED panel and manufacturing method thereof |
| CN110504387B (en) | 2019-08-30 | 2023-01-13 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN111192533A (en) * | 2020-02-28 | 2020-05-22 | 恩利克（浙江）智能装备有限公司 | Structure and manufacturing method of silicon-based OLED (organic light emitting diode) micro display panel |
| CN111863919B (en) * | 2020-07-29 | 2022-07-26 | 武汉天马微电子有限公司 | Display panel and display device |
| CN114335401A (en) * | 2020-09-30 | 2022-04-12 | 咸阳虹微新型显示技术有限公司 | OLED display panel preparation method, OLED display panel and OLED display |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002015292A2 (en) * | 2000-08-15 | 2002-02-21 | Emagin Corporation | Organic light emitting diode display devices having barrier structures between sub-pixels |
| CN1882207A (en) * | 2005-06-16 | 2006-12-20 | 悠景科技股份有限公司 | Organic electroluminescence display with high lighting efficiency and high gray contrast |
| CN1934605A (en) * | 2004-03-17 | 2007-03-21 | 皇家飞利浦电子股份有限公司 | Electroluminescent display devices |
| CN102637829A (en) * | 2011-02-11 | 2012-08-15 | 株式会社半导体能源研究所 | Light-emitting device and display device |
| CN203085550U (en) * | 2012-12-31 | 2013-07-24 | 上海天马微电子有限公司 | WOLED and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4526776B2 (en) * | 2003-04-02 | 2010-08-18 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
-
2012
- 2012-12-31 CN CN201210592451.XA patent/CN103268921B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002015292A2 (en) * | 2000-08-15 | 2002-02-21 | Emagin Corporation | Organic light emitting diode display devices having barrier structures between sub-pixels |
| CN1934605A (en) * | 2004-03-17 | 2007-03-21 | 皇家飞利浦电子股份有限公司 | Electroluminescent display devices |
| CN1882207A (en) * | 2005-06-16 | 2006-12-20 | 悠景科技股份有限公司 | Organic electroluminescence display with high lighting efficiency and high gray contrast |
| CN102637829A (en) * | 2011-02-11 | 2012-08-15 | 株式会社半导体能源研究所 | Light-emitting device and display device |
| CN203085550U (en) * | 2012-12-31 | 2013-07-24 | 上海天马微电子有限公司 | WOLED and display device |
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