CN103268921A - Method for manufacturing WOLED (White Organic Light Emitting Diode), WOLED and display equipment - Google Patents

Method for manufacturing WOLED (White Organic Light Emitting Diode), WOLED and display equipment Download PDF

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CN103268921A
CN103268921A CN 201210592451 CN201210592451A CN103268921A CN 103268921 A CN103268921 A CN 103268921A CN 201210592451 CN201210592451 CN 201210592451 CN 201210592451 A CN201210592451 A CN 201210592451A CN 103268921 A CN103268921 A CN 103268921A
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layer
light emitting
organic light
metal
woled
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CN 201210592451
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CN103268921B (en )
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熊志勇
赵本刚
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上海天马微电子有限公司
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Abstract

The invention discloses a method for manufacturing a WOLED (White Organic Light Emitting Diode), the WOLED and display equipment. The method comprises the following steps: forming an array substrate comprising an anode array on a substrate based on a composition process and forming a color filter substrate based on the composition process, including depositing a transparent organic thin film and a reflective metal thin film on the array substrate in sequence; patterning the reflective metal thin film to remove a metal thin film above an anode electrode; etching the transparent organic thin film by taking the patterned metal thin film as a mask to expose the anode electrode so as to form a pixel definition pattern; evaporating an organic light emitting unit and a cathode on the array substrate on which the pixel definition pattern is formed in sequence; and attaching the array substrate comprising the organic light emitting unit and the cathode with the color filter substrate to form the WOLED. According to the method, the light leakage phenomenon of the WOLED existing in the prior art can be avoided better, and the image display quality of the display equipment is improved.

Description

制造WOLED的方法、WOLED及显示设备 The method for producing the WOLED, and display device WOLED

技术领域 FIELD

[0001] 本发明涉及显示技术领域,尤其是涉及一种制造白光有机发光二极管(W0LED,White Organic Light Emitting Diode)的方法、一种WOLED 以及一种显不设备。 [0001] The present invention relates to display technologies, and in particular to a method of manufacturing a white organic light emitting diode (W0LED, White Organic Light Emitting Diode), a method and an WOLED not significantly apparatus.

背景技术 Background technique

[0002] 随着平面显示器技术的蓬勃发展,有机发光二极管(OLED,OrganicLightEmitting Diode)与传统的液晶显示器(IXD, Liquid Crystal Display)相比,除了更轻薄外,更具有自发光、低功率消耗、不需背光源、无视角限制及高反应速率等优良特性,已成为下一代平面显示器技术的主流。 [0002] With the development of flat panel display technologies, an organic light emitting diode (OLED, OrganicLightEmitting Diode) as compared with conventional liquid crystal display (IXD, Liquid Crystal Display), in addition to more light, but also has a self-luminous, low power consumption, without backlight, no viewing angle and a high reaction rate limiting and other excellent properties, has become the mainstream of the next generation of flat panel display technology.

[0003] 为实现OLED显示器的全彩化,一种方式是通过白色有机发光二极管(W0LED,White Organic Light Emitting Diode)和彩色滤光层(CF, ColorFilter)叠加来实现。 [0003] In order to achieve full-color OLED display, one way is the color filter layer (CF, ColorFilter) achieved by superimposing the white organic light emitting diode (W0LED, White Organic Light Emitting Diode) and. 其中,WOLED和CF层叠加过程不需要精准的掩膜工艺,就可以实现OLED显示器的高分辨率。 Wherein, the WOLED added and CF lamination process does not require precise mask process, you can achieve high resolution OLED display. 如图1所示,现有技术中在分别形成包含薄膜晶体管(TFT,Thin Film Transistor)阵列基板的WOLED发光层和包含有边缘保护层PDL的彩色滤光层之后,将形成的TFT阵列基板和CF层进行对准,压合,从而形成WOLED显示装置。 FIG After the TFT array substrate, the prior art light-emitting layer formed WOLED (TFT, Thin Film Transistor) array substrate and a color filter layer comprises a thin film transistor comprising protective layer PDL edge 1, respectively, and formed CF layers are aligned, laminated, thereby forming a display device WOLED.

[0004] 现有技术中,在进行TFT阵列基板和CF层贴合处理时,CF层和WOLED发光层之间会存在一定数值的缝隙,并且由于WOLED发光层具有自发光的光源特性,如图1所示,有机发光单元发出的光,在侧向到达彩膜基板的过程中,该缝隙会使得制作的WOLED显示器侧向漏光,从而造成产品混色,进而影响显示装置的质量。 [0004] In the prior art, when the TFT array substrate and the CF layer bonding process is performed, there will be a gap between a certain value and the CF layer WOLED light emitting layer, and a light source having a light emitting layer WOLED since self-luminous characteristic, FIG. 1, the light emitted from the organic light emitting unit, in the process of reaching the color filter substrate side, the gap will be produced such that the lateral WOLED display light leakage, resulting in mixing the product, thereby affecting the quality of the display device.

发明内容 SUMMARY

[0005] 本发明实施例提供了制造WOLED的方法、WOLED及显示设备,能够较好地避免现有技术中存在的WOLED漏光现象,提高显示设备的图像显示质量。 Example embodiments provide a method of manufacturing the WOLED [0005] In the present invention, a display apparatus and WOLED can better avoid the prior art that light leakage WOLED, improving the display quality of the image display apparatus.

[0006] —种制造白光有机发光二极管WOLED的方法,基于构图工艺在基板上形成包含阳极阵列的阵列基板,以及基于构图工艺形成彩色滤光基板,包括:在所述阵列基板上依次沉积透明有机薄膜和反射金属薄膜;图案化所述反射金属薄膜去除所述阳极电极上方的金属薄膜;以所述图案化后的金属薄膜为掩膜刻蚀所述透明有机薄膜,暴露出所述阳极电极,形成像素定义图案;在形成像素定义图案的阵列基板上依次蒸镀有机发光单元和阴极;将包含有机发光单元和阴极的阵列基板和彩色滤光基板进行贴合,形成WOLED显示器。 [0006] - method of manufacturing a white organic light emitting diode WOLED, the patterning process for forming on a substrate an anode comprising an array of the array substrate and the color filter substrate is formed based patterning process, including those based on: on the array substrate sequentially depositing a transparent organic and a reflective metal thin film; patterning said reflective metallic film removing the metal thin film over the anode electrode; metal film after the etching the mask is a patterned transparent organic film, exposing the anode electrode, forming a pixel pattern is defined; pixels on the array substrate define a pattern formed sequentially deposited organic light emitting unit and a cathode; and an organic light emitting unit and a cathode comprising an array substrate and the color filter substrate are bonded together to form a display WOLED.

[0007] 一种有白光有机发光二极管W0LED,包括相对设置的阵列基板和彩色滤光基板,包括:所述阵列基板包括阳极阵列以及定义像素区域的像素定义层;覆盖所述像素定义层和阳极电极的有机发光层;覆盖所述有机发光层的阴极层;所述有机发光层与所述像素定义层之间设置有金属反射层。 [0007] An organic white light-emitting diode W0LED, includes an array substrate and a color filter substrate disposed opposite, comprising: an array substrate comprising a pixel definition layer of the anode and defining an array of pixel areas; cover the pixel defining layer and the anode the organic light emitting layer of the electrode; cathode layer covering the organic light emitting layer; and the organic light emitting layer disposed between the pixel definition layer and the metal reflective layer.

[0008] —种显不设备,包含上述白光有机发光二极管WOLED。 [0008] - the device does not significantly species, including the white organic light emitting diode WOLED.

[0009] 采用上述技术方案,在包含阳极阵列的阵列基板上依次沉积透明有机薄膜和反射金属薄膜,并图案化所述反射金属薄膜,以及以图案化后的金属薄膜为掩膜刻蚀沉积的透明有机薄膜,形成像素定义图案,并依次蒸镀有机发光单元和阴极,形成的阵列基板和彩色滤光基板进行贴合,形成WOLED,由于在阵列基板上增加了反射金属薄膜,在进行贴合时,阵列基板和彩膜基板之间虽然仍旧存在空隙,但是WOLED发光层自身发射出的光源,会被金属反射层反射回来,因此能够较好地避免现有技术中存在的WOLED显示器漏光现象,提高显示装置的图像显示质量。 [0009] With the above technical solution, on the array substrate comprising sequentially depositing a transparent anode array of the organic thin film and a reflective metal thin film, and patterning the reflective metal thin film, and a metal film as a mask after patterning the deposited etch transparent organic film, forming a pixel define a pattern, and were deposited in the organic light emitting unit and a cathode, formed on the array substrate and the color filter substrate are bonded together to form the WOLED, the addition of a reflective metal thin film on the array substrate, bonding is performed when between the array substrate and the color filter substrate although voids still exist, but the light emitting layer itself WOLED emitted, is reflected back to the reflective metal layer, it is possible to better avoid the prior art that light leakage WOLED display, a display device to improve image display quality.

附图说明 BRIEF DESCRIPTION

[0010] 图1为现有技术中,提出的通过WOLED和CF压合形成的WOLED显示装置剖面图; [0010] FIG. 1 is a sectional view through the apparatus WOLED WOLED and CF nip formed by the prior art, there is proposed a display;

[0011] 图2a为本发明实施例中,提出的WOLED显示装置结构组成示意图; [0011] FIG. 2a embodiment of the present invention, WOLED display apparatus structures presented a schematic view;

[0012] 图2b〜图2d为本发明实施例中,提出的形成的包含阳极阵列的阵列基板的结构组成示意图; [0012] FIG 2b~ Figure 2d embodiment of the present invention, the structure comprising an array substrate formed of an anode composed of an array of raised schematic;

[0013] 图3a为本发明实施例中,提出的制造WOLED显示装置方法流程图; [0013] FIG. 3a embodiment of the present invention, the device manufacturing method of flowchart WOLED proposed display;

[0014] 图3b为本发明实施例中,提出的阵列基板形成过程示意图; [0014] Schematic diagram of FIG. 3b is formed in the array substrate is proposed embodiment of the invention;

[0015] 图3c为本发明实施例中,提出的沉积反射金属薄膜的阵列基板结构组成示意图; Example [0015] FIG. 3c of the present invention, deposition of a reflective metallic thin film made of a schematic view of an array substrate structures;

[0016] 图3d为本发明实施例中,提出的形成反射金属层的阵列基板结构组成示意图; [0016] FIG. 3d embodiment of the present invention, the array substrate is formed of a reflective metal layer made of a schematic composition;

[0017] 图3e为本发明实施例中,提出的像素定义层图案组成示意图; [0017] FIG. 3e embodiment of the present invention, the pixel defining layer pattern proposed schematic composition;

[0018] 图3f为本发明实施例中,提出的蒸镀阴极后的阵列基板结构组成示意图; [0018] FIG. 3f embodiment of the present invention, the array substrate structure after the deposition of the cathode made of a schematic composition;

[0019] 图4为本发明实施例中,提出的WOLED显示装置结构组成示意图; [0019] FIG. 4 embodiment of the present invention, WOLED display apparatus structures presented a schematic view;

[0020] 图5为本发明实施例中,提出的增加金属反射层的WOLED显示装置工作原理示意图。 [0020] FIG. 5 embodiment of the present invention, a schematic view of the principle means of increasing the metal reflective layer made WOLED display.

具体实施方式 Detailed ways

[0021] 针对现有技术中存在的WOLED显示器存在漏光现象,使得显示装置的图像显示质量较差的问题,本发明实施例这里提出的技术方案,通过在阵列基板上沉积反射金属薄膜,使得阵列基板和彩膜基板贴合处理之后,即使存在空隙,沉积的反射金属薄膜也能够将WOLED发光层发射的光源反射回来,较好地避免了现有技术中存在的WOLED显示器侧向漏光现象引起的混色问题,较好地提高了WOLED显示器的显示质量。 [0021] For prior art light leakage occurring WOLED present display, so that the image display apparatus displays poor quality problem, technical solutions of embodiments of the present invention presented herein, by depositing a reflective metal thin film on the array substrate, the array such that after the color filter substrate and a substrate bonding process, even when voids are present, the reflective metal thin film deposition can also be emitted from the light emitting layer WOLED reflected back, the better to avoid lateral WOLED display in the prior art due to light leakage color mixing, better display quality is improved WOLED display.

[0022] 下面将结合各个附图对本发明实施例技术方案的主要实现原理、具体实施方式及其对应能够达到的有益效果进行详细地阐述。 [0022] The main implementation principle below with reference to the various figures of the technical solution of the embodiments of the present invention, the specific embodiments and the corresponding beneficial effects that can be achieved are set forth in detail.

[0023] 本发明实施例这里提出一种WOLED显示装置,如图2a所示,包括相对设置的阵列基板601和彩色滤光基板602,包括: [0023] Example embodiments herein WOLED present invention provides a display device, as shown, includes an array substrate 601 and the color filter substrate 602 disposed opposite to FIG. 2a, comprising:

[0024] 所述阵列基板601包括阳极阵列以及定义像素区域的像素定义层304,覆盖所述像素定义层304和阳极电极的有机发光层306,覆盖所述有机发光层306的阴极层307,所述有机发光层306与所述像素定义层304之间设置有金属反射层305。 [0024] The array substrate 601 includes a pixel defining layer 304 and the anode array defines the pixel area, the pixel definition layer 304 covers the organic light emitting layer 306 and the anode electrode, the cathode layer covering the organic light emitting layer 306 is 307, the said metal reflective layer 305 between the organic light emitting layer 306 and the pixel defining layer 304 is provided.

[0025] 具体地,有机发光层306设置有有机发光单元(图中并未示出),所述有机发光单元可以是白光发光单元。 [0025] Specifically, the organic light emitting layer 306 is provided an organic light emitting unit (not shown), the organic light emitting unit may be a white light emitting unit.

[0026] 具体地,所述像素定义层304可以但不限于是亚克力系材料或有机树脂材料。 [0026] In particular, the pixel defining layer 304 may be, but is not limited to the acrylic resin-based material or an organic material.

[0027] 具体地,所述金属反射层305可以是光反射率大于80%、厚度为80nnT500nm的金属膜层。 [0027] Specifically, 305 may be a light reflectance of the metal reflective layer is greater than 80%, a thickness of the metal film layer 80nnT500nm. [0028] 较佳地,所述金属反射层305为金属铝膜层或金属银膜层。 [0028] Preferably, the metal reflective layer 305 is a metal layer of aluminum or silver metal film layer.

[0029] 具体实施中,包括阳极阵列的阵列基板还包括: [0029] In particular embodiments, the array substrate includes an array of anode further comprises:

[0030] 在基板上301上沉积的TFT膜层302,以及TFT膜层302上沉积的像素电极层303。 [0030] On the TFT substrate 301 deposited film 302, and a pixel electrode layer 303 deposited film 302 on the TFT. 其中,TFT膜层302中,包含形成的TFT区域。 Wherein, in the TFT layer 302 includes a TFT region is formed. 在TFT区域,形成有源区、栅电极、源电极以及漏电极(图2a中未示出)。 In the TFT region, the active region, a gate electrode, a source electrode and a drain electrode (not shown in FIG. 2a).

[0031] 具体地,在TFT膜层302中,TFT区域包含形成的栅极、有源区、源极区以及漏极区。 [0031] Specifically, in the TFT layer 302, TFT includes a gate region, an active region, a source region and a drain region is formed. 可以采用化学汽相沉积法在有源区上沉积厚度为100nnTl50nm的栅绝缘层,栅绝缘层的材料可以但不限于是二氧化硅或者氮化硅等。 It may be used a chemical vapor deposition method on the active region thickness of the gate insulating layer 100nnTl50nm, a gate insulating layer materials may be but not limited to silicon dioxide or silicon nitride. 在形成栅绝缘层之后,通过沉积工艺和构图工艺在形成栅绝缘层的基板上形成栅极。 After forming the gate insulating layer, forming a gate on the gate insulating layer is formed in the substrate through a deposition process and patterning process. 其中栅极位于有源区的栅绝缘层上。 Wherein the gate is a gate insulating layer on the active region. 形成栅极之后,进行掺杂工艺处理,以使有源区形成源极区、有源层、漏极区。 After forming the gate electrode, doping process, the active region to form the source region, the active layer, a drain region. 在TFT膜层302上,通过沉积工艺形成像素电极膜层303,然后基于构图工艺,在像素电极膜层303上形成阳极,从而形成包含阳极阵列的阵列基板。 On the TFT layer 302, the pixel electrode layer 303 is formed by a deposition process, and then based on the composition process to form an anode layer on the pixel electrode 303, thereby forming an array substrate comprising an anode array.

[0032] 较佳地,下面结合具体附图来阐述本包含阳极阵列基板的结构组成: [0032] Preferably, set forth below with specific reference to the structure of the present anode array comprising a substrate composed of:

[0033] 如图2b所示,TFT膜层302包括在基板301上沉积的多晶硅层(图中未示出),对所述多晶硅层根据所需图形进行光刻、刻蚀工艺处理,形成有源区3021和像素电极区3022。 [0033] As shown, the TFT layer 302 includes a substrate 301 deposited on the polysilicon layer 2b (not shown), the polysilicon layer is photolithography, etching process according to a desired processing pattern, there is formed the source region 3021 and a pixel electrode region 3022.

[0034] 如图2c所示,通过沉积工艺和构图工艺处理,在有源区3021上形成栅绝缘层3023。 [0034] As shown in FIG 2C, by a deposition process and patterning process, the gate insulating layer 3023 is formed on the active region 3021. 其中栅绝缘层可以是氮化硅或二氧化硅。 Wherein the gate insulating layer may be silicon nitride or silicon dioxide.

[0035] 如图2d所示,基于构图工艺处理,在所述基板上形成栅极3024,形成的栅极位于所述有源区3021上的栅绝缘层3023上。 A gate [0035] illustrated in Figure 2d, patterning process based on a gate 3024 is formed on the substrate, is formed on the gate insulating layer 3023 is located on the active region 3021. 对形成的有源区和像素电极区进行掺杂工艺处理,以使有源区形成源极区、有源层、漏极区,所述像素电极区形成像素电极层。 Active regions formed in the pixel electrode region and a doping process, the active region to form the source region, the active layer, a drain region, the pixel electrode region is formed the pixel electrode layer. 其中,所述栅极、有源层、源极区和漏极区构成TFT区域,且有源层位于源漏极区之间。 Wherein the gate electrode, an active layer, a source region and a drain region of the TFT area, and the active layer is located between the source and drain regions. 形成包含阳极阵列的阵列基板。 Forming an array substrate comprising an anode array.

[0036] 相应地,本发明实施这里还提出一种显示设备,该显示设备包括本发明实施例上述提出的WOLED。 [0036] Accordingly, embodiments of the present invention herein further provides a display apparatus, the display device comprising the above-described embodiment WOLED proposed embodiment of the present invention.

[0037] 本发明实施例这里提出一种制造WOLED的方法,如图3a所示,具体工艺流程如下述: [0037] Example embodiment of the present invention provides herein a method of manufacturing the WOLED, shown in Figure 3a, the specific process as follows:

[0038] 步骤21,基于构图工艺在基板上形成包含阳极阵列的阵列基板,以及基于构图工艺形成彩色滤光基板。 [0038] Step 21, based on the process of forming an array substrate comprising a patterned array on a substrate, an anode, and is formed on the color filter substrate patterning process.

[0039] 需要说明的是,本发明实施例这里提出的技术方案中,所述包含阳极阵列的阵列基板,以薄膜场效应晶体管(TFT,Thin Film Transistor)阵列基板为例来进行详细阐述。 [0039] Note that the technical solution herein proposed embodiment of the present invention, the anode array comprising an array substrate of a thin film field effect transistors (TFT, Thin Film Transistor) array substrate as an example to be elaborated. 并且,本发明实施例这里提出的技术方案中,仅给出针对包含阳极阵列的阵列基板的主要制作过程,具体实施中,可参照现有技术中TFT阵列基板的制造方法来制造本发明实施例这里提出的包含阳极阵列的阵列基板。 Further, the embodiment of the present invention, the technical solutions proposed herein, is given only for the main production process of the array substrate comprises an array of anodes, in particular embodiments, the present invention can be produced with reference to a method for producing the TFT array substrate of the prior art Example presented herein array substrate comprises an anode array.

[0040] 其中,形成包含阳极阵列的阵列基板的具体工艺流程为:如图3b所示,在基板301上形成TFT膜层302,其中,在形成的TFT膜层302中,包含形成的TFT区域。 Specific process [0040] wherein forming an array substrate comprising an anode array is: 3b, the TFT layer 302 is formed on the substrate 301, wherein the TFT layer 302 formed, comprising forming a TFT region . 在TFT区域,形成有源区、栅电极、源电极以及漏电极(图3a中未示出)。 In the TFT region, the active region, a gate electrode, a source electrode and a drain electrode (not shown in FIG. 3a).

[0041] 具体地,在TFT膜层302中,TFT区域包含形成的栅极、有源区、源极区以及漏极区。 [0041] Specifically, in the TFT layer 302, TFT includes a gate region, an active region, a source region and a drain region is formed. 可以采用化学汽相沉积法在有源区上沉积厚度为100nnTl50nm的栅绝缘层,栅绝缘层的材料可以但不限于是二氧化硅或者氮化硅等。 It may be used a chemical vapor deposition method on the active region thickness of the gate insulating layer 100nnTl50nm, a gate insulating layer materials may be but not limited to silicon dioxide or silicon nitride. 在形成栅绝缘层之后,通过沉积工艺和构图工艺在形成栅绝缘层的基板上形成栅极。 After forming the gate insulating layer, forming a gate on the gate insulating layer is formed in the substrate through a deposition process and patterning process. 其中栅极位于有源区的栅绝缘层上。 Wherein the gate is a gate insulating layer on the active region. 形成栅极之后,进行掺杂工艺处理,以使有源区形成源极区、有源层、漏极区。 After forming the gate electrode, doping process, the active region to form the source region, the active layer, a drain region.

[0042] 在TFT膜层302上,通过沉积工艺形成像素电极膜层303,然后基于构图工艺,在像素电极膜层303上形成阳极,从而形成包含阳极阵列的阵列基板。 [0042] On the TFT layer 302, the pixel electrode layer 303 is formed by a deposition process, and then based on the composition process to form an anode layer on the pixel electrode 303, thereby forming an array substrate comprising an anode array.

[0043] 具体地,所述基板可以但不限于是透明基板、陶瓷基板或者金属基板等任一形式的基板,本发明实施例这里提出的技术方案中,对此不作限制。 [0043] In particular, the substrate may be the substrate, but is not limited to any form of a transparent substrate, a ceramic substrate or a metal substrate or the like, technical solutions of embodiments of the invention presented herein, which is not limited.

[0044] 其中,彩色滤光基板的制作过程与现有技术中提出的彩色滤光基板的制作过程相同,本发明实施例这里不再赘述。 [0044] wherein, the same manufacturing process of the color filter substrate, the color filter substrate fabrication process proposed in the prior art, embodiments of the present invention embodiment will not be repeated herein.

[0045] 步骤22,在形成的阵列基板上依次沉积透明有机薄膜和反射金属薄膜。 [0045] Step 22, on an array substrate formed of a transparent organic thin film are sequentially deposited and a reflective metal thin film.

[0046] 其中,如图3c所示,在形成的包含阳极阵列的阵列基板上,依次沉积透明有机薄膜层304和反射金属薄膜305。 [0046] wherein, as shown in FIG. 3C, on the anode array comprising an array substrate formed by sequentially depositing a transparent organic thin film layer 304 and the reflective metal thin film 305. 透明有机膜层304的材质可以但不限于是亚克力系材料或有机树脂材料。 Transparent organic film material 304 may be, but is not limited to the acrylic resin-based material or an organic material. 沉积的透明有机膜层的厚度可以在lunT2.5um之间,较佳地,可以但不限于是1.5um或者2um。 The thickness of the transparent organic film layer deposited may be between lunT2.5um, preferably, or may be, but is not limited to 1.5um 2um. 本发明实施例这里提出的技术方案中,对此不做限制,可以根据实际应用需求进行更改。 Technical solutions herein proposed embodiment of the present invention, which is not limited, and can be changed according to actual needs.

[0047] 具体地,沉积的反射金属薄膜305的材质可以是光反射率大于80%、厚度为80nnT500nm的金属膜层。 [0047] Specifically, the reflective metal film deposition material 305 may be a light reflectance greater than 80% and a thickness of the metal film layer 80nnT500nm. 该金属膜层可以但不限于是金属铝膜层或者是金属银膜层。 The metal film layer may be, but is not limited to an aluminum metal layer or a layer of metallic silver.

[0048] 较佳地,本发明实施例这里提出的技术方案中,沉积的反射金属薄膜305的材质是具有较高的光反射率的金属银膜层。 [0048] Preferably, the embodiments herein presented technical solutions of the present invention, the reflective metal film deposition material 305 is a metallic silver layer having a high light reflectance.

[0049] 步骤23,图案化所述反射金属薄膜,去除所述阳极电极上方的金属薄膜。 [0049] Step 23, patterning the reflective metal film, removing the metal thin film above the anode electrode.

[0050] 其中,如图3d所示,可以对沉积的反射金属薄膜305进行掩膜、曝光、显影、光刻、刻蚀等构图工艺,去掉位于阳极电极上方的反射金属薄膜。 [0050] wherein, as shown in FIG. 3d, may be a reflective metal thin film 305 deposited on the mask, exposure, development, photolithography, etching patterning process to remove the metal thin film positioned above the reflective anode electrode.

[0051] 步骤24,以所述图案化后的金属薄膜为掩膜刻蚀所述透明有机薄膜,暴露出所述阳极电极,形成像素定义图案。 [0051] Step 24, after the metal thin film as a mask the patterned etching the transparent organic film, exposing the anode electrode, the pixel definition patterning.

[0052] 其中,可以采用干法刻蚀去除所述阳极电极正上方的透明有机薄膜,露出所述阳极电极,形成像素定义图案。 [0052] which may be removed by a dry etching the n-electrode is a transparent anode above the organic thin film, exposing the anode electrode, the pixel define a pattern.

[0053] 具体地,像素定义层304的剖面图可以参照图3e所示,像素定义层304覆盖到像素电极周边。 [0053] In particular, a sectional view of the pixel definition layer 304 may be illustrated with reference to FIG. 3E, a pixel definition layer 304 to cover the periphery of the pixel electrode.

[0054] 具体地,在步骤23〜步骤24中,进行图案化处理时,可以采用具有同样图案的掩模板进行相应的处理。 [0054] Specifically, in step 24 23~ step, the patterning process may be performed using the corresponding processing mask having the same pattern.

[0055] 需要说明的是,在上述步骤23〜步骤24中,是本发明实施例这里提出的一种较佳地实现方式。 [0055] Incidentally, in the above step 23~ step 24, an embodiment herein preferred embodiment of the present invention proposes to implementation. 具体实施中,对依次沉积透明有机薄膜和反射金属薄膜之后的阵列基板,还可以采用具有相同图案的掩模板,对透明有机薄膜和反射金属薄膜一起进行图案化,曝露出阳极电极,形成像素定义层图案。 In particular embodiments, the array of sequentially depositing a transparent substrate and an organic thin film after the reflective metal thin film may also be employed with the same mask pattern, the transparent organic film and the reflective metal thin film is patterned together expose the anode electrode, the pixel define layer pattern. 或者是对依次沉积透明有机薄膜和反射金属薄膜之后的阵列基板,采用同一个掩模板,分别对沉积的反射金属薄膜和透明有机薄膜进行图案化处理,暴漏出阳极电极,形成像素定义图案。 Or sequentially deposited on a transparent substrate after the array and a reflective metal thin film is an organic thin film using the same mask, each of the deposited reflective metal thin film and a transparent organic thin film patterning process, leakage storm anode electrode, the pixel definition patterning.

[0056] 较佳地,图案化反射金属薄膜使用的掩模板可以但不限于是图案化像素定义层所使用的像素定义层掩模板,也可以是额外定制的具有像素定义层图案的掩膜板。 [0056] Preferably, the reflective mask blank patterned metal thin film can be used, but is not limited to the pixel defining layer is patterned mask used for the pixel definition layer, additional customization may be a mask plate having a pattern of the pixel definition layer .

[0057] 较佳地,本发明实施例这里提出的技术方案中,在对沉积的反射金属薄膜进行图案化时,采用的是像素定义层掩模板,这样可以较好地将少使用掩模板的数量,降低企业的生产成本。 [0057] Preferably, the embodiment of the present invention, the technical solutions proposed herein, when the deposition of the reflective metal thin film is patterned, the pixel definition layer uses a reticle, which can be preferably used at least reticle the number of lower production costs.

[0058] 步骤25,在形成像素定义图案的阵列基板上依次蒸镀有机发光单元和阴极。 [0058] Step 25, the pixel on the array substrate define a pattern formed sequentially deposited organic light emitting unit and a cathode.

[0059] 其中,在形成像素定义图案的阵列基板上形成OLED器件。 [0059] wherein the OLED device is formed on a substrate, forming a pixel array defined pattern. 具体地,可以采用薄膜沉积工艺在形成像素定义图案的阵列基板上依次形成空穴传输层、有机发光层、电子传输层、OLED顶部电极,形成OLED器件。 In particular, thin film deposition process may be employed sequentially forming a hole transport layer is formed on the array substrate to define a pattern of pixels, organic light emitting layer, electron transporting layer, a top electrode OLED, the OLED device is formed.

[0060] 如图3f所示,在形成像素定义图案的阵列基板上,依次蒸镀有机发光单元306和阴极307,从而形成阵列基板401。 [0060] As shown in FIG 3f, the pixels on the array substrate define a pattern formed sequentially deposited organic light emitting unit 306 and the cathode 307, thereby forming the array substrate 401.

[0061] 具体地,蒸镀的有机发光单元306可以是白光发光单元。 [0061] Specifically, the deposition of the organic light emitting unit 306 may be a white light emitting unit.

[0062] 步骤26,将包含有机发光单元和阴极的阵列基板和彩色滤光基板进行贴合,形成WOLED显示装置。 [0062] Step 26, the cathode comprising an organic light emitting unit and the array substrate and the color filter substrate are bonded together to form a display apparatus WOLED.

[0063] 其中,如图4所示,将形成的阵列基板401和彩色滤光基板402进行贴合处理,形成WOLED显示装置。 [0063] wherein, as shown, formed on the array substrate 401 and the color filter substrate 402 is bonded to process 4, the display device is formed WOLED.

[0064] 具体地,彩色滤光基板的制作过程与现有技术中相同,本发明实施例这里不再进行赘述。 [0064] Specifically, the color filter substrate fabrication process is the same as the prior art, embodiments of the present invention is not herein be further described embodiment.

[0065] 采用本发明实施例提出的技术方案,形成的WOLED剖面图如图5所示,由于增加了具有反光性能的金属反射层,从而使得发光单元发出的光,到达侧向彩色滤光基板的过程中,遇到具有较高反射率的金属反射层被反射回来如图5所示,从而,即使在贴合后仍然存在缝隙,也能较好地降低侧向漏光现象,实现了减小混色的目的,进而提高了WOLED的图像 [0065] According to the present invention, the technical solutions proposed in this embodiment, the WOLED sectional form shown in Figure 5, the addition of the metal reflective layer having reflective properties, such that the light emitting means and reaches the color filter substrate side process, the metal reflective layer has encountered a high reflectivity is reflected back 5, so that, even if there is still a gap in the bonding, can better reduce lateral light leakage, to achieve a reduction blending purposes, and to improve the image of WOLED

显示质量。 Display quality.

[0066] 采用本发明实施例这里提出的技术方案,在制作阵列基板时,通过沉积一层金属反射层,使得从有机发光单元发出的光,以一定角度达到彩膜基板的过程中,会被金属反射层反射回来,从而降低了WOLED侧向漏光现象,实现减少混色的目的,较好地提高了显示质量。 [0066] The technical solutions of the present invention herein presented embodiment, when the array substrate, by depositing a layer of metal reflecting layer, such that light emitted from the organic light emitting unit, at an angle to achieve process color filter substrate, are metallic back reflection layer, thereby reducing light leakage WOLED side, to achieve the purpose of reducing color mixing, better display quality is improved.

[0067] 尽管已描述了本发明的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例作出另外的变更和修改。 [0067] While the present invention has been described with preferred embodiments, but those skilled in the art from the underlying inventive concept can make other modifications and variations to these embodiments. 所以,所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。 Therefore, the appended claims are intended to explain embodiments including the preferred embodiment as fall within the scope of the invention and all changes and modifications.

[0068] 显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。 [0068] Obviously, those skilled in the art can make various modifications and variations to the invention without departing from the spirit and scope of the invention. 这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。 Thus, if these modifications and variations of the present invention fall within the claims of the invention and the scope of equivalents thereof, the present invention intends to include these modifications and variations.

Claims (13)

  1. 1.一种制造白光有机发光二极管WOLED的方法,基于构图工艺在基板上形成包含阳极阵列的阵列基板,以及基于构图工艺形成彩色滤光基板,其特征在于,包括: 在所述阵列基板上依次沉积透明有机薄膜和反射金属薄膜; 图案化所述反射金属薄膜去除所述阳极电极上方的金属薄膜; 以所述图案化后的金属薄膜为掩膜刻蚀所述透明有机薄膜,暴露出所述阳极电极,形成像素定义图案; 在形成像素定义图案的阵列基板上依次蒸镀有机发光单元和阴极; 将包含有机发光单元和阴极的阵列基板和彩色滤光基板进行贴合,形成W0LED。 A method of manufacturing a white organic light emitting diode WOLED based patterning process for forming on a substrate anode array comprising an array substrate and forming a color filter on a substrate patterning process, characterized by comprising: sequentially on the array substrate, depositing a transparent organic thin film and a reflective metal thin film; patterning said reflective metallic film removing the metal thin film over the anode electrode; metal film after the etching the mask is a patterned transparent organic film, exposing the an anode electrode, forming a pixel pattern defined; pixels on the array substrate define a pattern formed sequentially deposited organic light emitting unit and a cathode; and an organic light emitting unit and a cathode comprising an array substrate and the color filter substrate are bonded together to form a W0LED.
  2. 2.如权利要求1所述的方法,其特征在于,对所述图案化之前的反射金属膜层进行掩膜、曝光、显影、光刻、刻蚀工艺,去掉位于阳极电极正上方的金属膜层。 2. The method according to claim 1, wherein the reflective metal layer prior to the patterned masking, exposure, development, lithography, etching process, the metal film is removed immediately above the anode electrode Floor.
  3. 3.如权利要求2所述的方法,其特征在于,采用干法刻蚀去除所述阳极电极正上方的透明有机薄膜,露出所述阳极电极,形成像素定义图案。 The method according to claim 2, characterized in that the transparent organic film removing dry etching immediately above the anode electrode, the anode electrode is exposed, patterning the pixel definition.
  4. 4.如权利要求1所述的方法,其特征在于,所述有机发光单元为白光发光单元。 4. The method according to claim 1, wherein the organic light emitting unit is a white light emitting unit.
  5. 5.如权利要求1所述的方法,其特征在于,所述透明有机膜层为亚克力系材料或有机树脂材料。 5. The method according to claim 1, characterized in that the transparent organic film layer of acrylic resin-based material or an organic material.
  6. 6.如权利要求1所述的方法,其特征在于,所述金属反射层的为光反射率大于80%、厚度为80nnT500nm的金属膜层。 6. The method according to claim 1, wherein the metal reflective layer is greater than 80% light reflectance, the thickness of the metal film layer 80nnT500nm.
  7. 7.如权利要求4所述的方法,其特征在于,所述金属反射层为金属铝膜层或金属银膜`层。 7. The method according to claim 4, wherein the aluminum metal reflective layer is a metal layer or a metal layer of silver film `.
  8. 8.一种白光有机发光二极管W0LED,包括相对设置的阵列基板和彩色滤光基板,其特征在于,包括: 所述阵列基板包括阳极阵列以及定义像素区域的像素定义层; 覆盖所述像素定义层和阳极电极的有机发光层; 覆盖所述有机发光层的阴极层; 所述有机发光层与所述像素定义层之间设置有金属反射层。 A white organic light emitting diode W0LED, includes an array substrate and a color filter substrate disposed opposite, characterized by comprising: an array substrate comprising a pixel definition layer of the anode and defining an array of pixel areas; pixel defining layer covers the the organic light-emitting layer and an anode electrode; cathode layer covering the organic light emitting layer; with a metal reflective layer between the organic light-emitting layer and the pixel defining layer is provided.
  9. 9.如权力要求8所述的W0LED,其特征在于,所述有机发光层设置有有机发光单元,所述有机发光单元为白光发光单元。 9. W0LED the claims 8, wherein the white light-emitting organic light emitting layer is provided with a unit organic light emitting unit of the organic light emitting unit.
  10. 10.如权利要求8所述的W0LED,其特征在于,所述像素定义层为亚克力系材料或有机树脂材料。 10. W0LED according to claim 8, wherein the pixel defining layer as acrylic resin-based material or an organic material.
  11. 11.如权利要求8所述的W0LED,其特征在于,所述金属反射层为光反射率大于80%、厚度为80nnT500nm的金属膜层。 11. W0LED according to claim 8, wherein said metal reflecting layer is a light reflectance greater than 80% and a thickness of the metal film layer 80nnT500nm.
  12. 12.如权利要求11所述的W0LED,其特征在于,所述金属反射层为金属铝膜层或金属银膜层。 12. W0LED 11 claim, wherein the aluminum metal reflective layer is a metal layer or a metal silver film layer.
  13. 13.—种显不设备,其特征在于,包含如权利要求8〜12任一所述的白光有机发光二极管WOLED。 13.- species does not significantly apparatus, wherein, a white organic light emitting diode WOLED according to any one of claims 8~12 comprising.
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