CN103268921A - Method for manufacturing WOLED (White Organic Light Emitting Diode), WOLED and display equipment - Google Patents
Method for manufacturing WOLED (White Organic Light Emitting Diode), WOLED and display equipment Download PDFInfo
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- CN103268921A CN103268921A CN201210592451XA CN201210592451A CN103268921A CN 103268921 A CN103268921 A CN 103268921A CN 201210592451X A CN201210592451X A CN 201210592451XA CN 201210592451 A CN201210592451 A CN 201210592451A CN 103268921 A CN103268921 A CN 103268921A
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Abstract
The invention discloses a method for manufacturing a WOLED (White Organic Light Emitting Diode), the WOLED and display equipment. The method comprises the following steps: forming an array substrate comprising an anode array on a substrate based on a composition process and forming a color filter substrate based on the composition process, including depositing a transparent organic thin film and a reflective metal thin film on the array substrate in sequence; patterning the reflective metal thin film to remove a metal thin film above an anode electrode; etching the transparent organic thin film by taking the patterned metal thin film as a mask to expose the anode electrode so as to form a pixel definition pattern; evaporating an organic light emitting unit and a cathode on the array substrate on which the pixel definition pattern is formed in sequence; and attaching the array substrate comprising the organic light emitting unit and the cathode with the color filter substrate to form the WOLED. According to the method, the light leakage phenomenon of the WOLED existing in the prior art can be avoided better, and the image display quality of the display equipment is improved.
Description
Technical field
The present invention relates to the Display Technique field, especially relate to method, a kind of WOLED and a kind of display device of a kind of manufacturing white organic LED (WOLED, White Organic Light Emitting Diode).
Background technology
Flourish along with the flat-panel screens technology, Organic Light Emitting Diode (OLED, Organic LightEmitting Diode) with traditional LCD (LCD, Liquid Crystal Display) compares, except more frivolous, have more self-luminous, low power consumption, do not need backlight, good characteristics such as the restriction of no visual angle and high reaction rate, become the main flow of flat-panel screens technology of future generation.
Be to realize full-colorization of OLED display, a kind of mode is that (CF ColorFilter) superposes and realizes by white OLED (WOLED, White Organic Light Emitting Diode) and chromatic filter layer.Wherein, the stacked process that adds of WOLED and CF does not need masking process accurately, just can realize the high-resolution of OLED display.As shown in Figure 1; comprise thin-film transistor (TFT forming respectively in the prior art; Thin Film Transistor) the WOLED luminescent layer of array base palte and including after the chromatic filter layer of edge protection layer PDL; the tft array substrate and the CF layer that form are aimed at; pressing, thus the WOLED display unit formed.
In the prior art, close when handling carrying out tft array substrate and CF laminating, the slit that can have certain numerical value between CF layer and the WOLED luminescent layer, and because the WOLED luminescent layer has self luminous light source characteristic, as shown in Figure 1, the light that organic light-emitting units sends, arrive in the process of color membrane substrates in side direction, this slit can make the WOLED display side direction light leak of making, thereby causes the product colour mixture, and then influences the quality of display unit.
Summary of the invention
The embodiment of the invention provides method, WOLED and the display device of making WOLED, can avoid the WOLED light leakage phenomena that exists in the prior art preferably, improves the image displaying quality of display device.
A kind of method of making white organic LED WOLED, form the array base palte that comprises anode array at substrate based on composition technology, and form colored optical filtering substrates based on composition technology, comprising: deposit transparent organic film and reflective metal film successively on described array base palte; The described reflective metal film of patterning is removed the metallic film of described anode electrode top; Be the described transparent organic film of mask etching with the metallic film behind the described patterning, expose described anode electrode, form the pixel definition pattern; Evaporation organic light-emitting units and negative electrode successively on the array base palte that forms the pixel definition pattern; Array base palte and the colored optical filtering substrates that will comprise organic light-emitting units and negative electrode are fitted, and form the WOLED display.
A kind of have a white organic LED WOLED, comprises the array base palte and the colored optical filtering substrates that are oppositely arranged, comprising: described array base palte comprises the pixel defining layer of anode array and definition pixel region; Cover the organic luminous layer of described pixel defining layer and anode electrode; Cover the cathode layer of described organic luminous layer; Be provided with metallic reflector between described organic luminous layer and the described pixel defining layer.
A kind of display device comprises above-mentioned white organic LED WOLED.
Adopt technique scheme, comprising on the array base palte of anode array deposit transparent organic film and reflective metal film successively, and the described reflective metal film of patterning, and be the transparent organic film of mask etching deposition with the metallic film behind the patterning, form the pixel definition pattern, and evaporation organic light-emitting units and negative electrode successively, the array base palte and the colored optical filtering substrates that form are fitted, form WOLED, owing to increased reflective metal film at array base palte, when fitting, though still there is the space between array base palte and the color membrane substrates, the light source that the WOLED luminescent layer self is launched can be reflected by metallic reflector, therefore can avoid the WOLED display light leakage phenomena that exists in the prior art preferably, improve the image displaying quality of display unit.
Description of drawings
Fig. 1 is in the prior art, the WOLED display unit profile that passes through WOLED and CF pressing formation of proposition;
Fig. 2 a is in the embodiment of the invention, and the WOLED display device structure of proposition is formed schematic diagram;
Fig. 2 b ~ Fig. 2 d is in the embodiment of the invention, and the structure of the array base palte that comprises anode array of the formation of proposition is formed schematic diagram;
Fig. 3 a is in the embodiment of the invention, the manufacturing WOLED display unit method flow diagram of proposition;
Fig. 3 b is in the embodiment of the invention, the array base palte forming process schematic diagram of proposition;
Fig. 3 c is in the embodiment of the invention, and the array base-plate structure of the deposition of reflective metallic film of proposition is formed schematic diagram;
Fig. 3 d is in the embodiment of the invention, and the array base-plate structure of the formation reflective metal layer of proposition is formed schematic diagram;
Fig. 3 e is in the embodiment of the invention, and the pixel defining layer pattern of proposition is formed schematic diagram;
Fig. 3 f is in the embodiment of the invention, and the array base-plate structure behind the evaporation negative electrode of proposition is formed schematic diagram;
Fig. 4 is in the embodiment of the invention, and the WOLED display device structure of proposition is formed schematic diagram;
Fig. 5 is in the embodiment of the invention, the WOLED display unit operation principle schematic diagram of the increase metallic reflector of proposition.
Embodiment
There is light leakage phenomena at the WOLED display that exists in the prior art, make the relatively poor problem of image displaying quality of display unit, the technical scheme that the embodiment of the invention proposes here, by deposition of reflective metallic film on array base palte, after making that the applying of array base palte and color membrane substrates is handled, even there is the space, the reflective metal film of deposition also can reflect the light source of WOLED luminescent layer emission, avoid the colour mixture problem that WOLED display side direction light leakage phenomena causes of problem in the prior art preferably, improved the display quality of WOLED display preferably.
At length set forth to the main realization principle of embodiment of the invention technical scheme, embodiment and to the beneficial effect that should be able to reach below in conjunction with each accompanying drawing.
The embodiment of the invention proposes a kind of WOLED display unit here, shown in Fig. 2 a, comprises the array base palte 601 and the colored optical filtering substrates 602 that are oppositely arranged, comprising:
Described array base palte 601 comprises the pixel defining layer 304 of anode array and definition pixel region, cover the organic luminous layer 306 of described pixel defining layer 304 and anode electrode, cover the cathode layer 307 of described organic luminous layer 306, be provided with metallic reflector 305 between described organic luminous layer 306 and the described pixel defining layer 304.
Particularly, organic luminous layer 306 is provided with organic light-emitting units (also not shown among the figure), and described organic light-emitting units can be the white-light emitting unit.
Particularly, described pixel defining layer 304 can but to be not limited to be acrylic based material or organic resin material.
Particularly, described metallic reflector 305 can be light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
Preferably, described metallic reflector 305 is metallic aluminium rete or argent rete.
In concrete the enforcement, comprise that the array base palte of anode array also comprises:
The TFT rete 302 of 301 depositions on substrate, and the pixel electrode layer 303 that deposits on the TFT rete 302.Wherein, in the TFT rete 302, comprise the TFT zone of formation.In the TFT zone, be formed with source region, gate electrode, source electrode and drain electrode (not shown among Fig. 2 a).
Particularly, in TFT rete 302, the TFT zone comprises grid, active area, source area and the drain region of formation.Can adopt chemical vapor deposition method deposit thickness on active area is the gate insulation layer of 100nm ~ 150nm, the material of gate insulation layer can but to be not limited to be silicon dioxide or silicon nitride etc.After forming gate insulation layer, form grid by depositing operation and composition technology at the substrate that forms gate insulation layer.Wherein grid is positioned on the gate insulation layer of active area.Form after the grid, carry out doping process and handle, so that active area forms source area, active layer, drain region.On TFT rete 302, form pixel electrode rete 303 by depositing operation, then based on composition technology, form anode at pixel electrode rete 303, thereby form the array base palte that comprises anode array.
Preferably, setting forth the structure that originally comprises the anode array substrate below in conjunction with concrete accompanying drawing forms:
Shown in Fig. 2 b, TFT rete 302 is included in the polysilicon layer (not shown) of deposition on the substrate 301, and described polysilicon layer is carried out photoetching, etching technics processing according to required figure, is formed with source region 3021 and pixel electrode district 3022.
Shown in Fig. 2 c, by depositing operation and composition PROCESS FOR TREATMENT, form gate insulation layer 3023 at active area 3021.Wherein gate insulation layer can be silicon nitride or silicon dioxide.
Shown in Fig. 2 d, based on the composition PROCESS FOR TREATMENT, form grid 3024 at described substrate, the grid of formation is positioned on the gate insulation layer 3023 on the described active area 3021.Active area and the pixel electrode district that forms carried out the doping process processing, so that active area forms source area, active layer, drain region, described pixel electrode district forms pixel electrode layer.Wherein, described grid, active layer, source area and drain region constitute the TFT zone, and active layer is between source-drain electrode area.Formation comprises the array base palte of anode array.
Correspondingly, the invention process also proposes a kind of display device here, and this display device comprises the WOLED of the above-mentioned proposition of the embodiment of the invention.
The embodiment of the invention proposes the method for a kind of WOLED of manufacturing here, shown in Fig. 3 a, and concrete technological process such as following:
Step 21 forms the array base palte that comprises anode array based on composition technology at substrate, and forms colored optical filtering substrates based on composition technology.
Need to prove that in the technical scheme that the embodiment of the invention proposes, the described array base palte that comprises anode array is that example is described in detail with Thin Film Transistor (TFT) (TFT, Thin Film Transistor) array base palte here.And, in the technical scheme that the embodiment of the invention proposes here, only provide the main manufacturing process at the array base palte that comprises anode array, in concrete the enforcement, can make the array base palte that comprises anode array that the embodiment of the invention proposes here with reference to the manufacture method of tft array substrate in the prior art.
Wherein, the concrete technological process that forms the array base palte that comprises anode array is: shown in Fig. 3 b, form TFT rete 302 at substrate 301, wherein, in the TFT rete 302 that forms, comprise the TFT zone of formation.In the TFT zone, be formed with source region, gate electrode, source electrode and drain electrode (not shown among Fig. 3 a).
Particularly, in TFT rete 302, the TFT zone comprises grid, active area, source area and the drain region of formation.Can adopt chemical vapor deposition method deposit thickness on active area is the gate insulation layer of 100nm ~ 150nm, the material of gate insulation layer can but to be not limited to be silicon dioxide or silicon nitride etc.After forming gate insulation layer, form grid by depositing operation and composition technology at the substrate that forms gate insulation layer.Wherein grid is positioned on the gate insulation layer of active area.Form after the grid, carry out doping process and handle, so that active area forms source area, active layer, drain region.
On TFT rete 302, form pixel electrode rete 303 by depositing operation, then based on composition technology, form anode at pixel electrode rete 303, thereby form the array base palte that comprises anode array.
Particularly, described substrate can but to be not limited to be the substrate of arbitrary forms such as transparency carrier, ceramic substrate or metal substrate, in the technical scheme that the embodiment of the invention proposes here, this is not restricted.
Wherein, the manufacturing process of the colored optical filtering substrates that proposes in the manufacturing process of colored optical filtering substrates and the prior art is identical, and the embodiment of the invention repeats no more here.
Wherein, shown in Fig. 3 c, on the array base palte that comprises anode array that forms, deposit transparent organic thin film layer 304 and reflective metal film 305 successively.The material of transparent organic film 304 can but to be not limited to be acrylic based material or organic resin material.The thickness of the transparent organic film of deposition can be between 1um ~ 2.5um, preferably, can but to be not limited to be 1.5um or 2um.In the technical scheme that the embodiment of the invention proposes here, this is not limited, can change according to practical application request.
Particularly, the material of the reflective metal film 305 of deposition can be light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.This metallic diaphragm can but to be not limited to be metallic aluminium rete or argent rete.
Preferably, in the technical scheme that the embodiment of the invention proposes here, the material of the reflective metal film 305 of deposition is the argent rete with higher light reflectivity.
Wherein, shown in Fig. 3 d, can carry out composition technologies such as mask, exposure, development, photoetching, etching to the reflective metal film 305 of deposition, remove the reflective metal film that is positioned at the anode electrode top.
Wherein, can adopt dry etching to remove transparent organic film directly over the described anode electrode, expose described anode electrode, form the pixel definition pattern.
Particularly, the profile of pixel defining layer 304 can be with reference to shown in Fig. 3 e, and pixel defining layer 304 covers the pixel electrode periphery.
Particularly, in step 23 ~ step 24, when carrying out patterned process, can adopt the mask plate with same pattern to handle accordingly.
Need to prove, in above-mentioned steps 23 ~ step 24, be a kind of preferably implementation that the embodiment of the invention proposes here.In concrete the enforcement, array base palte to after deposit transparent organic film and the reflective metal film successively can also adopt the mask plate with identical patterns, and transparent organic film and reflective metal film are carried out patterning together, expose anode electrode, form the pixel definition layer pattern.Or to the array base palte after deposit transparent organic film and the reflective metal film successively, adopt same mask plate, reflective metal film and transparent organic film to deposition carries out patterned process respectively, spills anode electrode cruelly, forms the pixel definition pattern.
Preferably, the mask plate that the patterning reflective metal film uses can but to be not limited to be the employed pixel defining layer mask plate of patterning pixel defining layer, also can be the mask plate with pixel definition layer pattern of additional customized.
Preferably, in the technical scheme that the embodiment of the invention proposes here, to the reflective metal film of deposition when carrying out patterning, employing be the pixel defining layer mask plate, can will use the quantity of mask plate less preferably like this, reduce the production cost of enterprise.
Wherein, form the OLED device at the array base palte that forms the pixel definition pattern.Particularly, can adopt thin film deposition processes on the array base palte that forms the pixel definition pattern, to form hole transmission layer, organic luminous layer, electron transfer layer, OLED top electrodes successively, form the OLED device.
Shown in Fig. 3 f, on the array base palte that forms the pixel definition pattern, evaporation organic light-emitting units 306 and negative electrode 307 successively, thus form array base palte 401.
Particularly, the organic light-emitting units 306 of evaporation can be the white-light emitting unit.
Wherein, as shown in Figure 4, with processings of fitting of the array base palte 401 that forms and colored optical filtering substrates 402, formation WOLED display unit.
Particularly, identical in the manufacturing process of colored optical filtering substrates and the prior art, the embodiment of the invention is no longer given unnecessary details here.
The technical scheme that adopts the embodiment of the invention to propose, the WOLED profile that forms as shown in Figure 5, owing to increased the metallic reflector with reflective function, thereby make the light that luminescence unit sends, arrive in the process of side direction colored optical filtering substrates, running into the metallic reflector with high reflectance is reflected as shown in Figure 5, thereby, even after applying, still there is the slit, also can reduce the side direction light leakage phenomena preferably, realize reducing the purpose of colour mixture, and then improved the image displaying quality of WOLED.
The technical scheme that adopts the embodiment of the invention to propose here, when making array base palte, by deposition layer of metal reflector, the feasible light that sends from organic light-emitting units, reach at a certain angle in the process of color membrane substrates, can be reflected by metallic reflector, thereby reduce WOLED side direction light leakage phenomena, realize reducing the purpose of colour mixture, improved display quality preferably.
Although described the preferred embodiments of the present invention, in a single day those skilled in the art get the basic creative concept of cicada, then can make other change and modification to these embodiment.So claims are intended to all changes and the modification that are interpreted as comprising preferred embodiment and fall into the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (13)
1. a method of making white organic LED WOLED forms the array base palte that comprises anode array based on composition technology at substrate, and forms colored optical filtering substrates based on composition technology, it is characterized in that, comprising:
Deposit transparent organic film and reflective metal film successively on described array base palte;
The described reflective metal film of patterning is removed the metallic film of described anode electrode top;
Be the described transparent organic film of mask etching with the metallic film behind the described patterning, expose described anode electrode, form the pixel definition pattern;
Evaporation organic light-emitting units and negative electrode successively on the array base palte that forms the pixel definition pattern;
Array base palte and the colored optical filtering substrates that will comprise organic light-emitting units and negative electrode are fitted, and form WOLED.
2. the method for claim 1 is characterized in that, the reflective metals rete before the described patterning is carried out mask, exposure, development, photoetching, etching technics, removes the metallic diaphragm that is positioned at directly over the anode electrode.
3. method as claimed in claim 2 is characterized in that, the employing dry etching is removed the transparent organic film directly over the described anode electrode, exposes described anode electrode, forms the pixel definition pattern.
4. the method for claim 1 is characterized in that, described organic light-emitting units is the white-light emitting unit.
5. the method for claim 1 is characterized in that, described transparent organic film is acrylic based material or organic resin material.
6. the method for claim 1 is characterized in that, described metallic reflector for light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
7. method as claimed in claim 4 is characterized in that, described metallic reflector is metallic aluminium rete or argent rete.
8. a white organic LED WOLED comprises the array base palte and the colored optical filtering substrates that are oppositely arranged, it is characterized in that, comprising:
Described array base palte comprises the pixel defining layer of anode array and definition pixel region;
Cover the organic luminous layer of described pixel defining layer and anode electrode;
Cover the cathode layer of described organic luminous layer;
Be provided with metallic reflector between described organic luminous layer and the described pixel defining layer.
9. as claim 8 described WOLED, it is characterized in that described organic luminous layer is provided with organic light-emitting units, described organic light-emitting units is the white-light emitting unit.
10. WOLED as claimed in claim 8 is characterized in that, described pixel defining layer is acrylic based material or organic resin material.
11. WOLED as claimed in claim 8 is characterized in that, described metallic reflector is light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
12. WOLED as claimed in claim 11 is characterized in that, described metallic reflector is metallic aluminium rete or argent rete.
13. a display device is characterized in that, comprises as the arbitrary described white organic LED WOLED of claim 8 ~ 12.
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