CN110112188A - The preparation method of display panel and display panel - Google Patents
The preparation method of display panel and display panel Download PDFInfo
- Publication number
- CN110112188A CN110112188A CN201910332984.6A CN201910332984A CN110112188A CN 110112188 A CN110112188 A CN 110112188A CN 201910332984 A CN201910332984 A CN 201910332984A CN 110112188 A CN110112188 A CN 110112188A
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- layer
- display panel
- auxiliary electrode
- electrode layer
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
This announcement provides the preparation method of a kind of display panel and display panel, display panel includes luminescent layer, pixel defining layer, encapsulated layer and cover board, pixel defining layer and luminescent layer interval are arranged, and encapsulated layer is arranged on luminescent layer and pixel defining layer, and cover board is arranged on encapsulated layer；It further include auxiliary electrode layer, auxiliary electrode layer is arranged between encapsulated layer and cover board, and auxiliary electrode layer is arranged in the non-open areas of display panel.Auxiliary electrode layer forms reinforcement metal layer in non-pixel areas, to reduce the cathode impedance in display device, solves the problem of pressure drop of display panel.
Description
Technical field
This announcement is related to the preparation method of field of display technology more particularly to a kind of display panel and display panel.
Background technique
Organic elctroluminescent device (Organic Light-Emitting Device, OLED) is relative to liquid crystal
Showing device has many advantages, such as that self-luminous, reaction are fast, frivolous, it has also become the emerging technology of display field.
Organic elctroluminescent device is divided into bottom emitting and top emitting according to illumination mode, in bottom emitting type display device
The problem of due to designed openings rate and be unable to satisfy market high-resolution products development demand, top emission OLED device
Use scope it is wider.Top emitting OLED has many advantages, such as high resolution ratio, transparent cathode and optical effect.Existing top hair
In the emitter part technological process of production, using the method for whole face plated film, it is easier to realize large-sized OLED screen in this way, still,
In existing top emitting device product, after the completion of cathode layer preparation, impedance becomes larger, is not able to satisfy requirement, so that
The problems such as display panel pressure drop in display is undesirable, causes Display panel uneven.
In conclusion existing top emitting OLED display panel is prepared in processing procedure in cathode layer, its cathode layer cannot achieve
Also there is lesser impedance while having compared with high transmittance, so that display panel display in display is uneven.For upper
Problem is stated, needs to propose further perfect and solution.
Summary of the invention
This announcement provides the preparation method of a kind of display panel and display panel, to solve existing top emitting oled panel
In, be unable to satisfy also has lesser impedance while cathode layer has compared with high transmittance, and display panel shows uneven etc.
Problem.
In order to solve the above technical problems, the technical solution that this announcement embodiment provides is as follows:
According to this announcement embodiment in a first aspect, providing a kind of display panel, comprising:
Luminescent layer；
Pixel defining layer, the pixel defining layer and the luminescent layer interval are arranged；
Encapsulated layer, the encapsulated layer are arranged on the luminescent layer and the pixel defining layer；
Cover board, the cover board are arranged on the encapsulated layer；
It wherein, further include auxiliary electrode layer, the auxiliary electrode layer is arranged between the encapsulated layer and the cover board, and
The auxiliary electrode layer is arranged in the non-open areas of the display panel.
According to one embodiment of this announcement, the material of the auxiliary electrode layer is nano silver.
According to one embodiment of this announcement, the cover board is glass cover-plate or colored filter.
According to one embodiment of this announcement, the auxiliary electrode layer with a thickness of 50 nanometers~1000 nanometers, the auxiliary electricity
The width of pole layer is 3 microns~20 microns.
According to the second aspect of this announcement, a kind of preparation method of display panel is additionally provided, is included the following steps,
S100: grid layer, source layer, drain electrode layer and the active layer and organic hair of thin film transistor (TFT) are prepared on substrate
The anode layer of optical diode；
S101: organic light emitting diode device layer and pixel defining layer are prepared on the basis of step S100, and prepares institute
State the cathode layer of Organic Light Emitting Diode；
S102: accurate auxiliary electrode layer is prepared, and the auxiliary electrode layer is transferred to the Organic Light Emitting Diode
Non-pixel region in；
S103: after the completion of transfer, the display panel is encapsulated.
According to one embodiment of this announcement, in the step S101, the preparation process is accurate regeneration mask plate technique.
According to one embodiment of this announcement, in the step S103, the packaging technology is thin-film package, solidification glue encapsulates,
One of desiccant encapsulation and cover board packaging technology or combination are packaged.
According to one embodiment of this announcement, in the step S101, the organic light emitting diode device layer includes hole
Implanted layer, hole transmission layer, luminescent layer, electron transfer layer and charge generating layers.
According to one embodiment of this announcement, the organic light emitting diode device layer uses InkJet printing processes and evaporation process
It is prepared.
According to one embodiment of this announcement, in the step S101, the material of the cathode layer is tin indium oxide, indium oxide
Zinc, magnesium or silver.
In conclusion this announcement embodiment has the beneficial effect that
This announcement provides the preparation method of a kind of display panel and display panel, by top emitting formula OLED device,
Auxiliary cathode layer is arranged using transfer technique on the basis of whole face cathode, the non-of display panel is arranged in the auxiliary cathode layer
It in pixel light emission region, in this way, effectively reducing the impedance of cathode, and solves the problem of pressure drop of display panel, improves aobvious
Show the display effect of panel.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of announcement
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is each schematic diagram of a layer structure of display panel of this announcement embodiment；
Fig. 2 is the preparation technology flow chart for the display panel that this announcement embodiment provides；
Fig. 3 is the auxiliary electrode schematic diagram of a layer structure that this announcement embodiment provides.
Specific embodiment
Below in conjunction with the attached drawing in this announcement embodiment, the technical solution in this announcement embodiment is carried out clear, complete
Site preparation description.Obviously, described embodiment is only this announcement a part of the embodiment, instead of all the embodiments.It is based on
Embodiment in this announcement, those skilled in the art's every other implementation obtained without creative efforts
Example belongs to the range of this announcement protection.
In this revealed embodiment, as shown in FIG. 1, FIG. 1 is each layer structural representations of the display panel of this announcement embodiment
Figure.The display panel include substrate 100, setting buffer layer 101 on the substrate 100, be arranged in it is inorganic on buffer layer 101
Insulating layer 102, the passivation layer 103 being arranged on inorganic insulation layer 102 and the flatness layer 104 being arranged on passivation layer 103.?
In above layers, thin film transistor (TFT) (thin film transistor, TFT) first grid is additionally provided in buffer layer 101
114, it further include active layer 115, the gate insulating layer being arranged on active layer 115 113, Yi Jishe in inorganic insulation layer 102
Set the second grid layer 112 on gate insulating layer 113.The source/drain of thin film transistor (TFT) is additionally provided in passivation layer 103
111.Wherein, the source/drain 111 of above-mentioned thin film transistor (TFT) is connected with the active layer 115.
In above-mentioned film layer, spatter film forming is can be used when preparing above-mentioned each film layer in each electrode of predominantly thin film transistor (TFT)
Technique or organic film forming technology, and be prepared through techniques such as overexposure, development and etchings.
Meanwhile in 104 film layer of flatness layer further include: OLED anode layer 105, OLED device layer 106, inorganic layer
107 and organic layer 108.OLED anode layer 105 is arranged on OLED device layer 106, the OLED anode layer 105 and OLED device
Part layer 106 is arranged in pixel defining layer, inorganic layer 107 seal the OLED anode layer 105, OLED device layer 106 and
Pixel defining layer.Organic layer 108 is arranged on the inorganic layer 107, and inorganic layer 107 and organic layer 108 constitute display together
The encapsulated layer of panel, with the OLED device in protection packaging layer.
Meanwhile an auxiliary electrode layer 109 is also set up on organic layer 108, cover board is set on the auxiliary electrode layer 109
110.Wherein, the auxiliary electrode layer 109 is positioned only on the non-luminous region of OLED device, that is, the non-of display panel is arranged in
In open area, in this way, the light issued in OLED device layer 106 will not be stopped, to not influence the display of display panel
Effect.Also, the auxiliary electrode layer 109 will form one layer of reinforcement metal layer, this layer of metal layer can reduce negative in OLED device
The impedance of pole, and then solve the problems, such as display panel pressure drop, guarantee the uniformity that display panel is shown.
Specifically, the making material of auxiliary electrode layer 109 can be nano silver, and cover board 110 can for glass cover-plate or
Colored filter cover board is selected according to the specifically used demand of display panel.
Meanwhile this announcement embodiment also provides a kind of preparation method of display panel.As shown in Fig. 2, Fig. 2 is that this announcement is real
The preparation technology flow chart of the display panel of example offer is provided.Process flow includes the following steps:
S100: grid layer, source layer, drain electrode layer and the active layer and organic hair of thin film transistor (TFT) are prepared on substrate
The anode layer of optical diode.
Specifically, first using a layer-by-layer composition on substrate when preparing the display panel of this announcement embodiment offer
Technique form the anode layer of the first grid layer of TFT, active layer, insulating layer, second grid layer, source/drain and OLED, tool
In body film layer structure combination Fig. 1 shown in each film layer schematic diagram of display panel.During the processing procedure of above-mentioned each film layer, Ke Yitong
Cross spatter film forming technology, organic chemistry film technique forms a film, and through photoetching processes such as overexposure, development and etchings at
Reason.
S101: organic light emitting diode device layer and pixel defining layer are prepared on the basis of step S100, and prepares institute
State the cathode layer of Organic Light Emitting Diode.
After each film layer in step S100 is provided with, continues the device layer for preparing Organic Light Emitting Diode, be prepared with
Successively accurate regeneration mask plate technical matters can be used when machine LED device layer to be prepared, at the same time it can also use
It is prepared by the technical matters that inkjet printing and vapor deposition mode combine.The device layer is mainly luminescent layer, specifically includes sky
The film layers such as cave implanted layer, hole transmission layer, luminescent layer, electron transfer layer and charge generating layers.
After the completion of device layer preparation, cathode layer is prepared on the device layer.Precision can also be used in the preparation of cathode layer
Mask plate technique is regenerated, wherein the material of cathode can be one of tin indium oxide, indium zinc oxide, magnesium or silver.
S102: accurate auxiliary electrode layer is prepared, and the auxiliary electrode layer is transferred to the Organic Light Emitting Diode
Non-pixel region in.
Accurate circuit figure layer, i.e. auxiliary electrode layer are prepared on the basis of step S101.In the preparation, using high-precision
Auxiliary electrode layer is made on OLED device layer by contraposition transfer technique.
Specifically, as shown in figure 3, Fig. 3 is the auxiliary electrode schematic diagram of a layer structure that this announcement embodiment provides.Display panel
It include pixel unit 302 and auxiliary electrode layer 301 in 300.The non-light-emitting area of display panel is arranged in auxiliary electrode layer 301
It is interior, i.e., non-open region, in this way, auxiliary electrode layer 301 will not influence the display effect in pixel region.According to pixel unit in OLED
Size prepare suitable mask pattern, then using high-precision contraposition transfer technique, auxiliary electrode is set on mask pattern
Layer 301, then be transferred on OLED device layer.The auxiliary electrode layer 301 with a thickness of 50 nanometers~1000 nanometers, preferably
250 nanometers, the width of the auxiliary electrode layer 301 is 3 microns~20 microns, preferably 3 microns.
S103: after the completion of transfer, the display panel is encapsulated.
It after the completion of transferring auxiliary electrode layer, will further be encapsulated in cover plate lid, the cover board is glass cover-plate or coloured silk
Colo(u)r filter is specifically chosen according to the display demand of display panel.When selecting packaging technology, thin-film package can be used, consolidate
Change glue encapsulation, desiccant encapsulation or cover board packaging technology be packaged, may be selected one of above-mentioned packaging technology or combination
Mode is packaged, to guarantee the effect of encapsulation.
Finally, obtaining the display panel in this announcement embodiment.
The preparation method of a kind of display panel and display panel provided by this announcement embodiment has been carried out in detail above
It introduces, the technical solution and its core concept of this announcement that the above embodiments are only used to help understand；This field it is general
Lead to technical staff it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, and these are repaired
Change or replace, it does not separate the essence of the corresponding technical solution, and this discloses the range of the technical solution of each embodiment.
Claims (10)
1. a kind of display panel characterized by comprising
Luminescent layer；
Pixel defining layer, the pixel defining layer and the luminescent layer interval are arranged；
Encapsulated layer, the encapsulated layer are arranged on the luminescent layer and the pixel defining layer；
Cover board, the cover board are arranged on the encapsulated layer；And
Auxiliary electrode layer, the auxiliary electrode layer is arranged between the encapsulated layer and the cover board, and the auxiliary electrode layer
It is arranged in the non-open areas of the display panel.
2. display panel according to claim 1, which is characterized in that the material of the auxiliary electrode layer is nano silver.
3. display panel according to claim 1, which is characterized in that the auxiliary electrode layer with a thickness of 50 nanometers~
1000 nanometers, the width of the auxiliary electrode layer is 3 microns~20 microns.
4. display panel according to claim 1, which is characterized in that the cover board is glass cover-plate or colored filter.
5. a kind of preparation method of display panel, which comprises the steps of:
S100: grid layer, source layer, drain electrode layer and the active layer and organic light emission two of thin film transistor (TFT) are prepared on substrate
The anode layer of pole pipe；
S101: organic light emitting diode device layer and pixel defining layer are prepared on the basis of step S100, and is had described in preparation
The cathode layer of machine light emitting diode；
S102: preparing auxiliary electrode layer, and the auxiliary electrode layer is transferred to the non-pixel areas of the Organic Light Emitting Diode
In domain, the auxiliary electrode layer is arranged in the non-open areas of the display panel；
S103: after the completion of transfer, the display panel is encapsulated.
6. the preparation method of display panel according to claim 5, which is characterized in that in the step S101, the system
Standby technique is accurate regeneration mask plate technique.
7. the preparation method of display panel according to claim 5, which is characterized in that in the step S103, the envelope
Dress technique is that one of thin-film package, solidification glue encapsulation, desiccant encapsulation and cover board packaging technology or combination carry out
Encapsulation.
8. the preparation method of display panel according to claim 5, which is characterized in that described in the step S101
Organic light emitting diode device layer includes that hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and charge generate
Layer.
9. the preparation method of display panel according to claim 8, which is characterized in that the organic light emitting diode device
Layer is prepared using InkJet printing processes and evaporation process.
10. the preparation method of display panel according to claim 5, which is characterized in that in the step S101, the yin
The material of pole layer is tin indium oxide, indium zinc oxide, magnesium or silver.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910332984.6A CN110112188A (en) | 2019-04-24 | 2019-04-24 | The preparation method of display panel and display panel |
| PCT/CN2019/087724 WO2020215417A1 (en) | 2019-04-24 | 2019-05-21 | Display panel and method for manufacturing display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910332984.6A CN110112188A (en) | 2019-04-24 | 2019-04-24 | The preparation method of display panel and display panel |
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| CN110112188A true CN110112188A (en) | 2019-08-09 |
Family
ID=67486453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910332984.6A Pending CN110112188A (en) | 2019-04-24 | 2019-04-24 | The preparation method of display panel and display panel |
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| Country | Link |
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| CN (1) | CN110112188A (en) |
| WO (1) | WO2020215417A1 (en) |
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| CN110783364A (en) * | 2019-10-31 | 2020-02-11 | Oppo广东移动通信有限公司 | Display device and electronic apparatus |
| CN110931653A (en) * | 2019-11-27 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111540844A (en) * | 2020-05-20 | 2020-08-14 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN111599936A (en) * | 2020-05-25 | 2020-08-28 | 合肥视涯技术有限公司 | Organic light-emitting display panel and preparation method thereof |
| CN111725422A (en) * | 2020-06-09 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN112259694A (en) * | 2020-10-14 | 2021-01-22 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| WO2021035832A1 (en) * | 2019-08-27 | 2021-03-04 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel, preparation method for oled display panel, and display device |
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| WO2020215417A1 (en) | 2020-10-29 |
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Application publication date: 20190809 |
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