CN110492013B - Manufacturing method of quantum dot display screen - Google Patents

Manufacturing method of quantum dot display screen Download PDF

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CN110492013B
CN110492013B CN201910796310.1A CN201910796310A CN110492013B CN 110492013 B CN110492013 B CN 110492013B CN 201910796310 A CN201910796310 A CN 201910796310A CN 110492013 B CN110492013 B CN 110492013B
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insulating layer
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CN110492013A (en
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刘召军
吴国才
林大野
邱成峰
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Shenzhen Stan Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission

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  • Physics & Mathematics (AREA)
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  • Manufacturing & Machinery (AREA)
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Abstract

The embodiment of the invention provides a manufacturing method of a quantum dot display screen, which comprises the following specific processes: forming a transparent insulating layer on the negative electrode conductive layer; etching one or more first through holes in the transparent insulating layer; filling a first light-emitting layer to the first through hole; etching one or more second through holes in the transparent insulating layer; filling a second light-emitting layer to the second through hole; etching one or more third through holes in the transparent insulating layer; filling a third light-emitting layer to the third through hole; and flattening the transparent insulating layer. The blue light quantum dots, the green light quantum dots and the red light quantum dots are filled into the etching through holes of the transparent insulating layer in a gradual backfilling mode of the quantum dots, and the surface of the transparent insulating layer is flattened, so that the quantum dot electroluminescent device is filled with three primary colors on the same plane. The manufacturing process is simple, and the full colorization of the quantum dot electroluminescent device is realized.

Description

Manufacturing method of quantum dot display screen
Technical Field
The embodiment of the invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a quantum dot display screen.
Background
The conventional method of integrating quantum dots into a display screen includes two methods, one is to use white Light quantum dots as backlight and realize screen colorization through a color selection plate, and the other is to spray green Light quantum dots and red Light quantum dots onto a blue Light LED (Light Emitting Diode) or a deep ultraviolet LED device so as to realize full colorization through the common Light emission of the LED, the green quantum dots and the red quantum dots. The traditional method has the advantages that the process is too complex and is not so time-consuming, and the process difficulty of realizing full-color of the quantum dot electroluminescent device on the same plane is higher.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method for manufacturing a quantum dot display panel, so as to solve the technical problem of how to implement full-color quantum dot electroluminescent devices on the same plane.
The first aspect of the embodiments of the present invention provides a method for manufacturing a quantum dot display screen, including the following steps:
forming a transparent insulating layer on the negative electrode conductive layer;
etching one or more first through holes in the transparent insulating layer;
filling a first light-emitting layer to the first through hole;
etching one or more second through holes in the transparent insulating layer;
filling a second light-emitting layer to the second through hole;
etching one or more third through holes in the transparent insulating layer;
filling a third light-emitting layer to the third through hole;
planarizing the transparent insulating layer;
manufacturing a negative conductive through hole, wherein the negative conductive through hole penetrates through the transparent insulating layer and exposes the negative conductive layer;
depositing a first conductive metal, and filling the negative conductive through hole with the first conductive metal to form a negative lead;
patterning the first conductive metal overlying the transparent insulating layer to form an array of negative conductors.
Preferably, before the filling of the first light emitting layer, an electron transport layer is further filled to the first via hole;
filling a hole transport layer to the first via hole after the filling of the first light emitting layer to the first via hole;
filling a positive conductive layer to the first via hole after filling the hole transport layer to the first via hole;
the first light-emitting layer is a red quantum dot light-emitting layer.
Preferably, before filling the second light emitting layer, an electron transport layer is further filled to the second via hole;
after the second light-emitting layer is filled, filling a hole transport layer to the second through hole;
filling a positive conductive layer to the second through hole after filling the hole transport layer to the second through hole;
the second light-emitting layer is a green quantum dot light-emitting layer.
Preferably, before filling the third light emitting layer, an electron transport layer is further filled to the third via hole;
after the third light-emitting layer is filled, filling a hole transport layer to the third through hole;
filling a positive electrode conductive layer to the third through hole after filling the hole transport layer to the third through hole;
wherein the third light-emitting layer is a blue quantum dot light-emitting layer.
Further, after the planarizing the transparent insulating layer, the method further includes:
and forming a passivation insulating layer on the transparent insulating layer.
Further, after the forming of the passivation insulating layer, the method further includes:
and manufacturing electrode through holes, wherein the electrode through holes comprise negative electrode through holes and positive electrode through holes, the electrode through holes penetrate through the passivation insulating layer, the negative electrode through holes penetrate through the passivation insulating layer and are in contact with the negative electrode lead array, the number of the negative electrode through holes is at least one, and the positive electrode through holes penetrate through the passivation insulating layer and are in contact with each positive electrode conducting layer.
Further, after the manufacturing of the electrode through hole, the method further comprises: forming a positive electrode and a negative electrode;
preferably, the forming the positive electrode and the negative electrode includes:
depositing conductive metal, and filling the electrode through holes with the conductive metal to form a positive electrode and a negative electrode;
depositing a second conductive metal on the passivation insulating layer and within the electrode via;
patterning the conductive metal overlying the passivation insulating layer to form the positive and negative electrodes.
Further, the method further comprises: the positive and negative electrodes are connected to a driving substrate.
Further, before the forming of the transparent insulating layer on the negative electrode conductive layer, the method further includes:
and forming the negative electrode conductive layer on a transparent substrate.
According to the method provided by the embodiment of the invention, the blue light quantum dots, the green light quantum dots and the red light quantum dots are filled into the etching holes of the transparent insulating layer in a gradual backfilling mode of the quantum dots, and the surface of the transparent insulating layer is flattened, so that the quantum dot electroluminescent device is filled with three primary colors on the same plane. The manufacturing process is simple, and the full colorization of the quantum dot electroluminescent device is easy to realize.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a quantum dot display screen according to a first embodiment of the invention;
fig. 2 to 4 are schematic diagrams illustrating steps of a manufacturing method of a quantum dot display screen according to a first embodiment of the invention;
fig. 5 to 17 are schematic diagrams of steps of a manufacturing method of a quantum dot display screen in the second embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the terms may be understood by those skilled in the art according to specific circumstances.
Example one
Fig. 1 is a flowchart of a method for manufacturing a quantum dot display screen according to an embodiment of the present invention. As shown in fig. 1, a method for manufacturing a quantum dot display screen according to an embodiment of the present invention includes the following steps:
and S110, forming a transparent insulating layer on the negative electrode conducting layer.
As shown in fig. 2, a transparent insulating layer 2 is formed on the cathode conductive layer 1 by deposition, and the transparent insulating layer 2 may be SiO2(silica). The quantum dot light-emitting layer is used for isolating different quantum dot light-emitting layers and positive and negative conducting layers.
And S120, etching one or more first through holes in the transparent insulating layer.
As shown in fig. 3a, one or more first through holes 20 may be etched in the transparent insulating layer 2 by etching.
The etching is a common method in a semiconductor manufacturing process, a microelectronic IC manufacturing process and a micro-nano manufacturing process, and is a main process of graphic processing associated with photoetching. Etching is actually understood in a narrow sense as photolithographic etching, in which the photoresist is first subjected to a photolithographic exposure process by photolithography and then etched away by other means to remove the portions to be removed. Photolithography, a process that is a major technique in the production of planar transistors and integrated circuits, is a process technique that opens holes in a mask (e.g., silicon dioxide) on the surface of a semiconductor wafer for localized diffusion of impurities.
And S121, filling the first light-emitting layer to the first through hole.
As shown in fig. 3b, the first light emitting layer 30 is formed in the first via hole 20 using a spin coating method or a deposition method, and the first light emitting layer 30 may be a red quantum dot light emitting layer.
The spin coating method is a short name of a spin coating method, is a commonly used preparation method in organic light emitting diodes, and mainly comprises a spin coater. The spin coating method includes: the method comprises three steps of material proportioning, high-speed rotation and film volatilization, and the thickness of a formed film is controlled by controlling the glue homogenizing time, the rotating speed, the dropping liquid amount, the concentration and the viscosity of a used solution. In the electronics industry, the process of coating a substrate with a liquid coating material while the substrate is rotating about an axis perpendicular to its surface. The deposition method is a chemical vapor deposition method, which refers to a method of synthesizing a coating or a nano material by reacting chemical gas or vapor on the surface of a substrate, and is the most widely used technique for depositing various materials in the semiconductor industry, including a wide range of insulating materials, most metal materials and metal alloy materials.
And S122, etching one or more second through holes on the transparent insulating layer.
As shown in fig. 3c, one or more second through holes 21 are etched in the transparent insulating layer 2 by means of etching.
And S123, filling the second light emitting layer to the second through hole.
As shown in fig. 3d, the second light emitting layer 31 is formed in the second via hole 21 using a spin coating method or a deposition method, and the second light emitting layer 31 may be a green quantum dot light emitting layer.
And S124, etching one or more third through holes on the transparent insulating layer.
As shown in fig. 3e, one or more third through holes 22 are etched in the transparent insulating layer 2 by means of etching.
And S125, filling a third light emitting layer to the third through hole.
As shown in fig. 3f, the third light emitting layer 32 is formed in the third via hole 22 by using a spin coating method or a deposition method, and the third light emitting layer 32 may be a blue quantum dot light emitting layer.
Preferably, the first light-emitting layer 30 may also be a green/blue quantum dot light-emitting layer, the second light-emitting layer 31 may also be a red/blue quantum dot light-emitting layer, and the third light-emitting layer 32 may also be a red/green quantum dot light-emitting layer, as long as the colors of the first light-emitting layer 30, the second light-emitting layer 31, and the third light-emitting layer 32 are different.
S130, flattening the transparent insulating layer.
The device is shown in fig. 4 after planarization. Preferably, the surface of the transparent insulating layer 2 is planarized by dry etching or chemical polishing, and the impurities 3 of the non-transparent insulating layer material on the surface of the transparent insulating layer 2 are removed at the same time.
Wherein, the dry etching is a technique for etching a film by using plasma; chemical grinding (also called chemical polishing) is a process of dipping and heating a part, firstly dissolving and eliminating the convex parts of the microscopic surface by the action of chemical corrosion, and reducing the surface concave-convex difference compared with the original surface so as to enable the surface to be smoother.
According to the method provided by the first embodiment of the invention, the blue light quantum dots, the green light quantum dots and the red light quantum dots are filled into the etching holes of the transparent insulating layer mainly in a mode of gradually backfilling the quantum dots, and the surface of the transparent insulating layer is flattened, so that the quantum dot electroluminescent device is filled with three primary colors on the same plane. The manufacturing process is simple, and the full colorization of the quantum dot electroluminescent device is easy to realize.
Example two
The manufacturing method of the quantum dot display screen provided by the second embodiment of the invention mainly comprises the following steps:
and S200, forming a negative electrode conductive layer on the transparent substrate.
Specifically, as shown in fig. 5, a cathode conductive layer 1 is formed on a transparent substrate 4 by deposition, and the cathode conductive layer 1 may be ITO (indium tin oxide).
And S210, forming a transparent insulating layer on the negative electrode conducting layer.
Specifically, as shown in fig. 6, a transparent insulating layer 2 is plated on the negative conductive layer 1 by deposition, and the transparent insulating layer 2 may be SiO2(silica).
S220, etching one or more first through holes in the transparent insulating layer.
As shown in fig. 7a, one or more first through holes 20 are etched in the transparent insulating layer 2 by means of etching.
And S221, filling the electron transmission layer to the first through hole.
As shown in fig. 7b, the electron transport layer 300 is filled in the first via hole 20 by spin coating or deposition, and the electron transport layer 300 may be Poly-TPD (polymer triphenyldiamine derivative).
And S222, filling the first light-emitting layer to the first through hole.
As shown in fig. 7c, the first light emitting layer 301 is filled in the first through hole 20 by spin coating or deposition, and the first light emitting layer 301 covers the electron transport layer 300. The first light emitting layer 301 may be a red quantum dot light emitting layer.
And S223, filling the hole transport layer to the first through hole.
As shown in fig. 7d, the hole transport layer 302 is filled in the first via hole 20 by spin coating or deposition, and the hole transport layer 302 covers the first light emitting layer 301. Hole transport layer 302 can be Alq3(8-hydroxyquinolinylaluminum).
And S224, filling the positive conductive layer to the first through hole.
As shown in fig. 7e, the positive conductive layer 303 is filled in the first through hole 20 by spin coating or deposition, the positive conductive layer 303 covers the hole transport layer 302, and the positive conductive layer 303 may be ITO.
And S230, etching one or more second through holes on the transparent insulating layer.
As shown in fig. 8a, one or more second through holes 21 are etched in the transparent insulating layer 2 by means of etching.
And S231, filling the electron transmission layer to the second through hole.
As shown in fig. 8b, the electron transport layer 300 is filled in the second via hole 21 by spin coating or deposition, and the electron transport layer 300 may be Poly-TPD.
And S232, filling the second light emitting layer to the second through hole.
As shown in fig. 8c, the second light emitting layer 311 is filled in the second through hole 21 by spin coating or deposition, and the second light emitting layer 311 covers the electron transporting layer 300. The second light emitting layer 311 may be a green quantum dot light emitting layer.
And S233, filling the hole transport layer to the second through hole.
As shown in fig. 8d, the hole transport layer 302 is filled in the second via hole 21 by spin coating or deposition, and the hole transport layer 302 covers the second light emitting layer 311. Hole transport layer 302 can be Alq3。
And S234, filling the positive conductive layer to the second through hole.
As shown in fig. 8e, the positive conductive layer 303 is filled in the second through hole 21 by spin coating or deposition, the positive conductive layer 303 covers the hole transport layer 302, and the positive conductive layer 303 may be ITO.
And S240, etching one or more third through holes on the transparent insulating layer.
As shown in fig. 9a, one or more third through holes 22 are etched in the transparent insulating layer 2 by means of etching.
And S241, filling the electron transmission layer to the third through hole.
As shown in fig. 9b, the electron transport layer 300 is filled in the third via 22 by spin coating or deposition, and the electron transport layer 300 may be Poly-TPD.
And S242, filling a third light emitting layer to the third through hole.
As shown in fig. 9c, the third light emitting layer 321 is filled in the third through hole 22 by spin coating or deposition, and the third light emitting layer 321 covers the electron transport layer 300. The third light emitting layer 321 may be a blue quantum dot light emitting layer.
And S243, filling the hole transport layer to the third through hole.
As shown in fig. 9d, the hole transport layer 302 is filled into the third via hole 22 by spin coating or deposition, and the hole transport layer 302 covers the third light emitting layer 321. Hole transport layer 302 can be Alq3。
And S244, filling the positive conductive layer to the third through hole.
As shown in fig. 9e, the positive conductive layer 303 is filled in the third through hole 22 by spin coating or deposition, the positive conductive layer 303 covers the hole transport layer 302, and the positive conductive layer 303 may be ITO.
And S245, flattening the transparent insulating layer.
The device is shown in fig. 10 after planarization. Preferably, the surface of the transparent insulating layer 2 is planarized by dry etching or chemical polishing, and the impurities 3 of the non-transparent insulating layer material on the surface of the transparent insulating layer 2 are removed at the same time.
Wherein, the dry etching is a technique for etching a film by using plasma; chemical grinding (also called chemical polishing) is a process of dipping and heating a part, firstly dissolving and eliminating the convex parts of the microscopic surface by the action of chemical corrosion, and reducing the surface concave-convex difference compared with the original surface so as to enable the surface to be smoother.
And S250, manufacturing a negative electrode conductive through hole.
As shown in fig. 11, the negative conductive via 23 is formed by photolithography and etching, such that the negative conductive via 23 penetrates through the transparent insulating layer 2 and exposes the negative conductive layer 1.
S260, depositing first conductive metal in the first conductive through holes and on the transparent insulating layer, and patterning the first conductive metal covered on the transparent insulating layer to form a negative electrode lead array.
As shown in fig. 12, a first conductive metal, such as Al (aluminum), is deposited to fill the negative conductive via hole to form the negative electrode wire 5. Meanwhile, a specific negative electrode lead pattern is made on the conductive metal covering the transparent insulating layer 2 by a dry etching method to form a negative electrode lead array 51, as shown in fig. 13, which is a schematic top view of the negative electrode lead array 51.
And S270, forming a passivation insulating layer on the transparent insulating layer.
As shown in fig. 14, a passivation insulating layer 6 may be formed on the cathode wire array 51 by deposition, and the passivation insulating layer 6 may be SiO2. The passivation insulating layer is used for isolating the positive electrode and the negative electrode and delaying the corrosion of the positive electrode and the negative electrode.
And S280, manufacturing an electrode through hole.
As shown in fig. 15, the electrode through holes include a negative electrode through hole 61 and a positive electrode through hole 62, and the electrode through holes are formed by etching and penetrate through the passivation insulating layer 6, wherein the negative electrode through hole 61 penetrates through the passivation insulating layer 6 and is in contact with the negative electrode lead array 51, and the number of the negative electrode through holes is at least one; the positive electrode through-hole penetrates the passivation insulating layer 6 and contacts the positive electrode conductive layer 303 in each electrode through-hole.
And S290, forming a positive electrode and a negative electrode.
As shown in fig. 16, forming the positive electrode and the negative electrode includes: depositing a second conductive metal: depositing a second conductive metal such as Al to fill the electrode via hole with the second conductive metal; patterning a second conductive metal overlying the passivation insulating layer: the second conductive metal covering the passivation insulating layer 6 is patterned by dry etching to form a negative electrode 71 and a positive electrode 72.
And S291, connecting the positive electrode and the negative electrode to a driving substrate.
As shown in fig. 17, the negative electrode pad and the positive electrode pad are soldered/bonded to the drive substrate 8. The drive substrate 8 is provided with a drive circuit for applying a negative potential and a positive potential to the device at the corresponding negative electrode and positive electrode, respectively. Specifically, three pixel display unit driving units are disposed on the driving substrate 8, and include a first pixel display unit driving unit, a second pixel display unit driving unit, and a third pixel display unit driving unit, where the first pixel display unit driving unit is configured to drive the first light emitting layer to emit light, the second pixel display unit driving unit is configured to drive the second light emitting layer to emit light, and the third pixel display unit driving unit is configured to drive the third light emitting layer to emit light.
According to the method provided by the embodiment of the invention, the blue light quantum dots, the green light quantum dots and the red light quantum dots are filled into the etching holes of the transparent insulating layer in a gradual backfilling mode of the quantum dots, and the surface of the transparent insulating layer is flattened, so that the quantum dot electroluminescent device is filled with three primary colors on the same plane. The manufacturing process is simple, and the full colorization of the quantum dot electroluminescent device is easy to realize.
The foregoing is considered as illustrative only of the preferred embodiments of the invention and is for the purpose of promoting an understanding of the principles of the invention and is to be understood that the scope of the invention is not limited by this specific disclosure. All such possible equivalents and modifications are deemed to fall within the scope of the invention as defined in the appended claims.

Claims (9)

1. A manufacturing method of a quantum dot display screen is characterized by comprising the following steps:
forming a transparent insulating layer on the negative electrode conductive layer;
etching one or more first through holes in the transparent insulating layer;
filling a first light-emitting layer to the first through hole;
etching one or more second through holes in the transparent insulating layer;
filling a second light-emitting layer to the second through hole;
etching one or more third through holes in the transparent insulating layer;
filling a third light-emitting layer to the third through hole;
planarizing the transparent insulating layer;
manufacturing a negative conductive through hole, wherein the negative conductive through hole penetrates through the transparent insulating layer and exposes the negative conductive layer;
depositing a first conductive metal, and filling the negative conductive through hole with the first conductive metal to form a negative lead;
patterning the first conductive metal overlying the transparent insulating layer to form an array of negative conductors.
2. The method of claim 1, wherein an electron transport layer is also filled into the first via prior to said filling the first light emitting layer;
filling a hole transport layer to the first via hole after the filling of the first light emitting layer to the first via hole;
filling a positive conductive layer to the first via hole after filling the hole transport layer to the first via hole;
the first light-emitting layer is a red quantum dot light-emitting layer.
3. The method of claim 2, wherein before said filling the second light emitting layer, further filling an electron transport layer to the second via;
after filling the second light-emitting layer to the second through hole, filling a hole transport layer to the second through hole;
filling a positive conductive layer to the second through hole after filling the hole transport layer to the second through hole;
the second light-emitting layer is a green quantum dot light-emitting layer.
4. The method of claim 3, wherein before said filling the third light emitting layer, further filling an electron transport layer to said third via;
after the third light-emitting layer is filled to the third through hole, a hole transport layer is also filled to the third through hole;
filling a positive electrode conductive layer to the third through hole after filling the hole transport layer to the third through hole;
wherein the third light-emitting layer is a blue quantum dot light-emitting layer.
5. The method of claim 4, further comprising, after the planarizing the transparent insulating layer:
and forming a passivation insulating layer on the transparent insulating layer.
6. The method of claim 5, further comprising, after said forming a passivation insulating layer:
and manufacturing electrode through holes, wherein the electrode through holes comprise negative electrode through holes and positive electrode through holes, the electrode through holes penetrate through the passivation insulating layer, the negative electrode through holes penetrate through the passivation insulating layer and are in contact with the negative electrode lead array, the number of the negative electrode through holes is at least one, and the positive electrode through holes penetrate through the passivation insulating layer and are in contact with each positive electrode conducting layer.
7. The method of claim 6, further comprising, after said fabricating electrode vias: forming a positive electrode and a negative electrode;
the forming the positive electrode and the negative electrode includes:
depositing a second conductive metal on the passivation insulating layer and within the electrode via;
patterning the conductive metal overlying the passivation insulating layer to form the positive and negative electrodes.
8. The method of claim 7, further comprising:
the positive and negative electrodes are connected to a driving substrate.
9. The method of claim 1, further comprising, prior to said forming a transparent insulating layer on the negative conductive layer:
and forming the negative electrode conductive layer on a transparent substrate.
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WO2022000480A1 (en) * 2020-07-03 2022-01-06 深圳市思坦科技有限公司 Display module manufacturing method and display screen
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WO2018160019A2 (en) * 2017-02-28 2018-09-07 한국생산기술연구원 Printed quantum dot organic light emitting display device and manufacturing method therefor
CN109473560A (en) * 2018-11-19 2019-03-15 京东方科技集团股份有限公司 Display panel and its manufacturing method, display device for mounting on vehicle

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018160019A2 (en) * 2017-02-28 2018-09-07 한국생산기술연구원 Printed quantum dot organic light emitting display device and manufacturing method therefor
CN109473560A (en) * 2018-11-19 2019-03-15 京东方科技集团股份有限公司 Display panel and its manufacturing method, display device for mounting on vehicle

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